CN108666359A - A kind of device architecture and implementation method improving GaN enhancement type channel mobilities using novel barrier layer - Google Patents
A kind of device architecture and implementation method improving GaN enhancement type channel mobilities using novel barrier layer Download PDFInfo
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- CN108666359A CN108666359A CN201710196720.3A CN201710196720A CN108666359A CN 108666359 A CN108666359 A CN 108666359A CN 201710196720 A CN201710196720 A CN 201710196720A CN 108666359 A CN108666359 A CN 108666359A
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 230000037230 mobility Effects 0.000 title claims abstract description 27
- 230000004888 barrier function Effects 0.000 title claims abstract description 21
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 51
- 239000000463 material Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000009413 insulation Methods 0.000 claims abstract description 11
- 238000005036 potential barrier Methods 0.000 claims abstract description 9
- 238000001039 wet etching Methods 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 230000007797 corrosion Effects 0.000 claims abstract description 7
- 238000005260 corrosion Methods 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052790 beryllium Inorganic materials 0.000 claims description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 239000011669 selenium Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- 239000007772 electrode material Substances 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 5
- 238000003780 insertion Methods 0.000 abstract description 3
- 230000037431 insertion Effects 0.000 abstract description 3
- 229910002601 GaN Inorganic materials 0.000 description 58
- 238000005516 engineering process Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000000243 solution Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910001868 water Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- -1 HfTiO Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001965 increasing effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention discloses a kind of device architecture and preparation method thereof improving GaN enhancement type channel mobilities using novel barrier layer, the structure includes substrate, GaN or AlN buffer layers, GaN channel layers, AlGaN layer insert layer, GaN insert layers, AlN insert layers, AlGaN insert layers, mask medium layer, insulation gate dielectric layer and source and drain Ohmic contact and grid metal.AlGaN/AlN/GaN/AlGaN/GaN heterojunction materials are epitaxially grown on the substrate, and form source electrode and drain electrode on this structure.The present invention is inserted into one group of AlN/GaN in AlGaN potential barrier, the GaN layer of insertion is as thermal oxide, the stop-layer of wet etching, side remains complete AlGaN/GaN heterojunction structures under the gate, avoid the damage of corrosion and dielectric layer deposited to raceway groove, reduce conducting resistance, the thickness that barrier layer below grid can be accurately controlled simultaneously, can improve the accuracy, controllability, consistency of technique, be conducive to industrialization and prepare on a large scale.
Description
Technical field
The invention belongs to microelectronics technologies, are related to the making of GaN power electronic devices
Background technology
In recent years, gallium nitride material causes extensive pass since energy gap is big, breakdown potential field strength, saturated velocity are big
Note.AlGaN/GaN hetero-junctions strong polarity effects form the two-dimensional electron gas of high concentration in high speed, high power and pressure-resistant electronic device
Field plays important role.It is wide that the superior performance of GaN material makes it have in frequency microwave and field of power electronics
Application prospect.
GaN device is mainly based on GaN hetero-junctions HEMT, in conventional AlGaN/GaN hetero-junctions, due to spontaneous polarization
Effect and piezoelectric polarization effect, in heterojunction boundary, there are the two-dimensional electron gas of high concentration, i.e., conventional AlGaN/GaN HEMT
Device shows as depletion device.But it the considerations of for security of system and terseness, is needed in the application of many actual circuits
Want enhancement device.
The current more commonly used method to realize enhanced GaN MOS is grid removal technology and fluorine ion injection technique, grid
Removal technology includes two kinds of dry etching and wet etching again.The wherein side of the grid removing method of dry etching and fluorine ion injection
Method has prodigious damage to GaN MOS channel surfaces；And although the grid of wet etching remove technology without plasma damage,
AlGaN potential barrier is all removed due to disposable, deposit gate dielectric layer is inevitable to the damage of raceway groove, obtained MOS raceway grooves
Mobility be far below the mobility of heterojunction boundary, therefore the conducting resistance for the enhancement device prepared is big, output current
Density is relatively low.
In order to improve GaN enhancement type channel electron mobilities, surface topography is needed to be improved, interface scattering is reduced.Solution at present
Certainly this problem has following improvement plan：Make the damage to raceway groove as small as possible 1. adjusting technological parameter；2. from energy band engineering
Angle using the back of the body barrier structure make channel electrons far from dielectric layer and the interfaces GaN, to reduce interface to channel electrons
Scattering improves enhancement type channel electron mobility, and then promotes the saturation current of device, obtains high-performance, the GaN of high stable increases
Strong type device.
Invention content
The present invention in order to preferably solve the problems, such as GaN enhancement type channel mobilities it is low this, utilize wet etching self-stopping technology
The characteristics of, be inserted into one group of AlN/GaN in AlGaN potential barrier, the GaN layer of insertion as thermal oxide, the stop-layer of wet etching,
Side remains complete AlGaN/GaN heterojunction structures under the gate, reduces conducting resistance, while can accurately control under grid
The thickness of square barrier layer obtains the high GaN enhancement devices of superior performance, stability.
The technical thought of the present invention is as follows：In the traditional AlGaN/GaN enhancement devices structure for removing technology based on grid, grid
Dielectric layer is in direct contact to form MOS raceway grooves with GaN layer.On the one hand, the distance of insulation gate dielectric layer and GaN channel layers is close, leads
Channel electrons are caused to be acted on by the strong scattering from interface, mobility reduces；On the other hand, dielectric layer is deposited directly on GaN ditches
It is inevitable to the damage of GaN raceway grooves on road.In on the basis of traditional enhanced AlGaN/GaN device structure,
It is inserted into one group of AlN/GaN in AlGaN potential barrier, uses high-temperature thermal oxidation method so that oxidation is automatically stopped the GaN in insertion
Layer, eliminates the damage to raceway groove in technical process, remains complete AlGaN/GaN hetero-junctions, gate dielectric layer and GaN raceway grooves
It realizes separation, effectively inhibits the strong scattering at interface to act on, improve the mobility of enhancement type channel electronics.
According to above-mentioned technical thought the conducting of device is reduced in order to reduce the mobility of GaN enhancement device channel electrons
Resistance, a kind of device architecture improving GaN enhancement type channel mobilities using novel barrier layer, the structure includes substrate, GaN
Or it is AlN buffer layers, intrinsic GaN channel layers, intrinsic AlGaN insert layers, intrinsic GaN insert layers, intrinsic AlN insert layers, intrinsic
AlGaN potential barrier, mask medium layer, insulation insulation gate dielectric layer and grid metal；The AlN/GaN groups be located at two layers AlGaN it
Between；AlGaN/GaN/AlN/AlGaN/GaN heterojunction materials are epitaxially grown on the substrate, area of grid is defined in wafer surface,
It is etched away for AlGaN/AlN layers below area of grid, and forms source electrode, drain and gate on this structure.
Each layer constituent and material category are as follows in the structure：
The substrate material is one kind in following material：Si, SiC, sapphire.
The thickness of the AlGaN insert layers is between 1 and 5nm.
The thickness of the GaN insert layers is between 1 and 3nm.
The thickness of the AlN insert layers is between 1 and 3nm.
The material of the mask medium layer can be：SiO2、Al2O3、HfO2、MgO。
The material of the insulation gate dielectric layer is any one in following material：Si3N4、Al2O3、AlN、HfO2、SiO2、
HfTiO、Sc2O3、Ga2O3、MgO、SiNO。
The source electrode and drain electrode is：It is one or more in titanium, aluminium, nickel, gold, platinum, iridium, molybdenum, tantalum, niobium, cobalt, zirconium, tungsten etc.
Alloy.
The gate metal is one or more combinations of following conductive material：Platinum, iridium, nickel, gold, molybdenum, palladium, selenium, beryllium,
TiN, polysilicon, ITO.
The preparation method of this novel enhancement type GaN MOS devices includes step in detail below：
(1) GaN or AlN buffer layers, intrinsic GaN channel layers, sheet are grown successively according to certain growth conditions on substrate
Levy AlGaN insert layers, intrinsic GaN insert layers, intrinsic AlN insert layers, intrinsic AlGaN potential barrier；
(2) the AlGaN/AlN/GaN/AlGaN/GaN materials grown carry out lithography and etching (or ion implanting), shape
At active region mesa；
(3) organic washing is carried out to the AlGaN/AlN/GaN/AlGaN/GaN materials for preparing active region mesa, with flowing
Deionized water cleaning after be put into HCl：H2O=1:1~2min is cleaned in 10 solution, then using PECVD, ICPCVD or
LPCVD is formed on its surface one layer of thin SiO2Mask of the dielectric layer as thermal oxide；
(4) photoetching gate electrode region etches SiO with RIE2Etching window is formed, is then placed in annealing furnace, temperature is
650 DEG C, at one atm, oxygen flow is that 2.5L/min aoxidizes 45min, and sample is put into 70 DEG C after the completion of oxidation
Corrode 40min in KOH solution, remove the upper layer AlGaN/AlN hetero-junctions aoxidized, finally BOE is used to remove SiO2Mask；
(5) photoetching is carried out to the material for completing grid etching, etches source and drain ohmic contact regions, by electron beam evaporation or
Magnetron sputtering prepares metal ohmic contact and is removed, and finally fast speed heat is moved back between 800 DEG C~900 DEG C in nitrogen environment
Fiery (general 30s) forms Ohmic contact；
(6) material for forming source and drain Ohmic contact is put into atomic layer deposition apparatus, grows insulated gate in wafer surface
Dielectric layer, makes source and drain areas contact hole by lithography, then etches away insulation gate dielectric layer, and source and drain Ohmic contact is made to be exposed；
(7) deposited by electron beam evaporation or the foregoing alloy gate electrodes material of Grown by Magnetron Sputtering, then to device into
Row stripping technology processing forms gate electrode, is finally made annealing treatment in a nitrogen environment to entire wafer, completes integral device
Preparation.
The invention has the advantages that：
(1) device of the invention is by introducing AlN/GaN insert layers so that corrosion is automatically stopped in GaN layer, retains grid
Lower section AlGaN/GaN hetero-junctions avoids the influence to raceway groove in the process of corrosion process and dielectric layer deposited, improves GaN increasings
The channel mobility of strong type device；
(2) present invention is from the angle of device structure design, by changing the position of AlN/GaN insert layers, Ke Yijing
The really thickness of control grid lower section AlGaN layer so that device performance has high consistency, is conducive to the extensive system of device
It is standby；
(3) compared with conventional wet corrodes the method for realizing enhancement device, the present invention only needs implementation method of the invention
The structure for changing epitaxial layer does not need to change technological process, therefore implementation method simple possible.
Description of the drawings
The principle and its structure of device of the present invention can be more fully hereinafter illustrated by referring to accompanying drawing, and further describe this hair
Bright exemplary embodiment, in the accompanying drawings：
Fig. 1 is the whole sectional structure chart of enhancement device prepared by conventional wet corrosion, and help preferably illustrates this hair
Bright mentality of designing；
Fig. 2 is the whole cross-sectional view of enhancement device of the present invention；
Fig. 3~Figure 10 is the cross-section structure signal after each step manufacturing process of new structure enhancement device in the present invention
Figure reflects the technique manufacturing process of the present invention.
Specific implementation mode
Hereinafter, the present invention is more fully described with reference to the accompanying drawings, and embodiment is shown in the accompanying drawings and its realized
Journey, described embodiment are only a kind of way of realization in the present invention, i.e. the present invention should not be construed as limited to herein
The embodiment of elaboration.Based on the embodiment, those skilled in the art are fully conveyed the scope of the present invention to.
Hereinafter, exemplary embodiment of the present invention is more fully described with reference to the accompanying drawings.
With reference to Fig. 2, the sequence of the device architecture from bottom to top includes substrate, GaN or AlN buffer layers, intrinsic GaN ditches successively
Channel layer, intrinsic AlGaN insert layers, intrinsic GaN insert layers, intrinsic AlN insert layers, intrinsic AlGaN potential barrier, insulating medium layer and
Grid metal.Preparation method includes step in detail below：
(1) as shown in figure 3, on a si substrate (substrate can be SiC or sapphire), growing one layer with MOCVD first
Then GaN or AlN buffer layers grow intrinsic GaN channel layers, intrinsic AlGaN insert layers, intrinsic AlN insert layers, intrinsic successively again
GaN insert layers, intrinsic AlGaN potential barrier；
(2) the AlGaN/AlN/GaN/AlGaN/GaN material good to epitaxial growth in (1) carries out lithography and etching, is formed
Then active region mesa carries out organic washing, HCl is put into after being cleaned with the deionized water of flowing：H2O=1:It is clear in 10 solution
1~2min is washed, is then formed on its surface one layer of thin SiO using PECVD, ICPCVD or LPCVD2Dielectric layer is as hot oxygen
The mask of change, sectional view are as shown in Figure 4；
(3) photoetching gate electrode region is carried out on architecture basics shown in Fig. 4, and SiO is etched with RIE2Etching window is formed, such as
Shown in Fig. 5；
(4) it being formed after structure shown in Fig. 5, wafer is put into annealing furnace, temperature is 650 DEG C, at one atm,
Oxygen flow is that 2.5L/min aoxidizes 45min, and sample, which is put into after the completion of oxidation in 70 DEG C of KOH solution, corrodes 40min, removes
It is as shown in Figure 6 to form structure for the upper layer AlGaN/AlN hetero-junctions aoxidized；
(5) on architecture basics shown in Fig. 6, SiO is removed using BOE2Mask, as shown in Figure 7；
(6) photoetching is carried out on architecture basics as shown in Figure 7, is etched source and drain ohmic contact regions, is steamed by electron beam
Hair or magnetron sputtering prepare metal ohmic contact and are removed, finally fast between 800 DEG C~900 DEG C in nitrogen environment
Speed heat is annealed (general 30s), is formed Ohmic contact, is formed structure as shown in Figure 8；
(7) on architecture basics as shown in Figure 8, the material for forming source and drain Ohmic contact is put into atomic layer deposition apparatus
In, insulation gate dielectric layer is grown in wafer surface, source and drain areas contact hole is made by lithography, then etches away insulation gate dielectric layer, make
Source and drain Ohmic contact is exposed, as shown in Figure 9；
(8) in structure shown in Fig. 9, deposited by electron beam evaporation or Grown by Magnetron Sputtering alloy gate electrodes material, then
Stripping technology processing is carried out to device and forms gate electrode, finally entire wafer is made annealing treatment in a nitrogen environment, is completed
The preparation of integral device, as shown in Figure 10.
(9) the new structure HEMT device prepared by above step for conventional structure, move by channel electrons
Shifting rate is obviously improved, and conducting resistance reduces.
Claims (14)
1. a kind of device architecture and implementation method being improved GaN enhancement type channel mobilities using novel barrier layer, feature are existed
In：The structure includes：Substrate, GaN or AlN buffer layers, intrinsic GaN channel layers, intrinsic AlGaN insert layers, intrinsic GaN are inserted into
Layer, intrinsic AlN insert layers, intrinsic AlGaN potential barrier, mask medium layer, insulation insulation gate dielectric layer and grid metal；The AlN/
GaN groups are located between two layers of AlGaN；AlGaN/GaN/AlN/AlGaN/GaN heterojunction materials are epitaxially grown on the substrate, in crystalline substance
First surface defines area of grid, is etched away for AlGaN/AlN layers below area of grid, and form source electrode and drain electrode on this structure
To form GaN enhancement devices.
2. the device architecture and reality according to claim 1 for improving GaN enhancement type channel mobilities using novel barrier layer
Existing method, it is characterised in that：Substrate material therein is Si, SiC, sapphire.
3. the device architecture and reality according to claim 1 for improving GaN enhancement type channel mobilities using novel barrier layer
Existing method, it is characterised in that：The thickness of AlGaN insert layers is between 1 and 5nm.
4. the device architecture and reality according to claim 1 for improving GaN enhancement type channel mobilities using novel barrier layer
Existing method, it is characterised in that：The thickness of GaN insert layers is between 1 and 3nm.
5. the device architecture and reality according to claim 1 for improving GaN enhancement type channel mobilities using novel barrier layer
Existing method, it is characterised in that：The thickness of AlN insert layers is between 1 and 3nm.
6. the device architecture and reality according to claim 1 for improving GaN enhancement type channel mobilities using novel barrier layer
Existing method, it is characterised in that：The material of mask medium layer can be：SiO2、Al2O3、HfO2、MgO。。
7. the device architecture and reality according to claim 1 for improving GaN enhancement type channel mobilities using novel barrier layer
Existing method, it is characterised in that：The material of insulation gate dielectric layer is any one in following material：Si3N4、Al2O3、AlN、
HfO2、SiO2、HfTiO、Sc2O3、Ga2O3、MgO、SiNO。
8. the device architecture and reality according to claim 1 for improving GaN enhancement type channel mobilities using novel barrier layer
Existing method, it is characterised in that：Source electrode and drain electrode material is：In titanium, aluminium, nickel, gold, platinum, iridium, molybdenum, tantalum, niobium, cobalt, zirconium, tungsten etc.
One or more alloys.
9. the device architecture and reality according to claim 1 for improving GaN enhancement type channel mobilities using novel barrier layer
Existing method, it is characterised in that：Gate metal is one or more combinations of following conductive material：Platinum, iridium, nickel, gold, molybdenum, palladium,
Selenium, beryllium, TiN, polysilicon, ITO.
10. the device architecture and reality according to claim 1 for improving GaN enhancement type channel mobilities using novel barrier layer
Existing method, it is characterised in that：Mask medium layer below area of grid can be realized by ICP RIE dry etchings.
11. the device architecture and reality according to claim 1 for improving GaN enhancement type channel mobilities using novel barrier layer
Existing method, it is characterised in that：AlGaN/AlN layers under area of grid can pass through wet etching and dry etching and wet method
The method that corrosion combines is realized.
12. it is according to claim 11 using novel barrier layer improve GaN enhancement type channel mobilities device architecture and
The method of implementation method, wet etching can be：First use oxygen plasma, ozone, hydrogen peroxide or other with strong oxidizing property
Medium aoxidizes AlGaN/AlN, then falls oxide with hcl corrosion.
13. it is according to claim 11 using novel barrier layer improve GaN enhancement type channel mobilities device architecture and
The method of implementation method, wet etching can be：First high-temperature oxydation AlGaN/AlN, reusable heat KOH solution corrosion fall oxide.
14. it is according to claim 11 using novel barrier layer improve GaN enhancement type channel mobilities device architecture and
Implementation method, the method that dry etching and wet etching combine can be：A part of AlGaN first is etched with ICP, then rotten with wet method
Etching off removes remaining AlGaN/AlN.
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