CN108666329A - Image sensor - Google Patents
Image sensor Download PDFInfo
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- CN108666329A CN108666329A CN201710213646.1A CN201710213646A CN108666329A CN 108666329 A CN108666329 A CN 108666329A CN 201710213646 A CN201710213646 A CN 201710213646A CN 108666329 A CN108666329 A CN 108666329A
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- infrared light
- light
- infrared
- balls
- visible light
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- 238000001914 filtration Methods 0.000 claims abstract description 71
- 238000000034 method Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 5
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- 239000000463 material Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
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- 230000011664 signaling Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
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- 230000003247 decreasing effect Effects 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
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- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Polymers C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Abstract
The present invention proposes a kind of Image Sensor, and it includes visible light receivers and infrared light receiver.It can be seen that light receiver is to receive visible light, infrared light receiver is receiving infrared light.It can be seen that light receiver assembles visible light comprising colorized optical filtering layers of balls.In some embodiments of the invention, infrared light receiver penetrates optical filtering layers of balls to assemble infrared light comprising infrared light.In some other embodiments of the present invention, infrared light receiver assembles infrared light comprising white optical filtering layers of balls.
Description
Technical field
The present invention relates to a kind of Image Sensor, and more particularly to a kind of image sensing with infrared light sensing function
Device.
Background technology
With the development of control of access system and security system, the biological identification of personal identification is confirmed using characteristics of human body
(biometric) technology is gradually prevailing.Iris-recognition technology with high-reliability is the universal biological identification of one of which
Technology.When iris-recognition technology is applied to electronic device, such as smart mobile phone, smart mobile phone be required to receive respectively visible light with
The Image Sensor of infrared light realizes iris discriminating function.There are two different parts to distinguish for traditional Image Sensor tool
Receive visible light and infrared light.
Invention content
The present invention proposes a kind of Image Sensor, including visible light receiver and infrared light receiver.It can be seen that light receiver
To receive visible light, infrared light receiver is receiving infrared light.It can be seen that light receiver gathers comprising colorized optical filtering layers of balls
Collect visible light.Infrared light receiver penetrates optical filtering layers of balls to assemble infrared light comprising infrared light.
An embodiment according to the present invention, above-mentioned visible light receiver also include that visible light optical diode and infrared light are cut
Only filter layer.Infrared cut of light filter layer is set on visible light optical diode, and colorized optical filtering layers of balls is set to infrared light and cuts
Only on filter layer.Visible light is connect across colorized optical filtering layers of balls and infrared cut of light filter layer by visible light optical diode
It receives.
An embodiment according to the present invention, above-mentioned infrared light receiver also include that infrared light optical diode and white filter
Layer.White filter layer is set on infrared light optical diode, and infrared light penetrates optical filtering layers of balls and is set on white filter layer.It is red
Outer light penetrates optical filtering layers of balls and white filter layer across infrared light and is received by infrared light optical diode.
An embodiment according to the present invention, above-mentioned Image Sensor also include wafer layer, and wafer layer is located at visible light light two
In pole pipe and infrared light optical diode.The first part of wafer layer is located in visible light receiver, and the second part of wafer layer
In infrared light receiver.
The first part of an embodiment according to the present invention, above-mentioned wafer layer is located at infrared cut of light filter layer and visible light
Between optical diode, and the second part of wafer layer is located between white filter layer and infrared light optical diode.
An embodiment according to the present invention, above-mentioned colorized optical filtering layers of balls include red filter unit, green filter unit with
And blue filter unit.
An embodiment according to the present invention, above-mentioned Image Sensor also include flatness layer, and flatness layer is providing flat table
Face.Colorized optical filtering layers of balls is set on flat surfaces.
An embodiment according to the present invention, above-mentioned flatness layer are located in visible light receiver and infrared light receiver.
The present invention separately proposes a kind of Image Sensor, including visible light receiver and infrared light receiver.It can be seen that light-receiving
Portion is to receive visible light, and infrared light receiver is receiving infrared light.It can be seen that light receiver include colorized optical filtering layers of balls to
Assemble visible light.Infrared light receiver assembles infrared light comprising white optical filtering layers of balls.
According to still another embodiment of the invention, above-mentioned visible light receiver also includes visible light optical diode and infrared light
Light cutoff filter layer.Infrared cut of light filter layer is set on visible light optical diode, and colorized optical filtering layers of balls is set to infrared light
On light cutoff filter layer.Visible light is connect across colorized optical filtering layers of balls and infrared cut of light filter layer by visible light optical diode
It receives.
According to still another embodiment of the invention, above-mentioned infrared light receiver also includes infrared light optical diode and infrared light
Penetrate filter layer.Infrared light penetrates filter layer and is set on infrared light optical diode, and white optical filtering layers of balls is set to infrared light
It penetrates on filter layer.Infrared light passes through white optical filtering layers of balls and infrared light to penetrate filter layer and connect by infrared light optical diode
It receives.
According to still another embodiment of the invention, above-mentioned Image Sensor also includes wafer layer, and wafer layer is located at visible light light
On diode and infrared light optical diode.The first part of wafer layer is located in visible light receiver, and second of wafer layer
Divide and is located in infrared light receiver.
According to still another embodiment of the invention, the first part of above-mentioned wafer layer be located at infrared cut of light filter layer with it is visible
Between light optical diode, and the second part of wafer layer is located at infrared light and penetrates between filter layer and infrared light optical diode.
According to still another embodiment of the invention, above-mentioned colorized optical filtering layers of balls includes red filter unit, green filter unit
And blue filter unit.
According to still another embodiment of the invention, above-mentioned Image Sensor also includes flatness layer, and flatness layer is flat to provide
Surface.Colorized optical filtering layers of balls is set on flat surfaces.
According to still another embodiment of the invention, above-mentioned flatness layer is located in visible light receiver and infrared light receiver.
The beneficial effects of the present invention are：The structure of the Image Sensor of the present invention can effectively improve Image Sensor institute
The luminous intensity of the infrared light received reduces subsequently analyze optical signalling in other instruments whereby to meet the demand of user
Degree of difficulty when (such as video signal).
Description of the drawings
From the detailed description done below in conjunction with Figure of description, can have to the aspect of the disclosure and more preferably understand.It needs to note
Meaning, according to the standard practice of industry, each feature is not drawn to be painted.In fact, in order to keep discussion apparent, each spy
The size of sign all can be increased or decreased arbitrarily.
Fig. 1 is the sectional view for the Image Sensor for being painted first embodiment according to the present invention.
Fig. 2 is the sectional view for being painted Image Sensor according to the second embodiment of the present invention.
Fig. 3 is the flow chart of the method for the formation Image Sensor for being painted first embodiment according to the present invention.
Fig. 4 a to Fig. 4 b are the method the step of institutes for the formation Image Sensor for being painted first embodiment according to the present invention
The sectional view of corresponding Image Sensor.
Wherein, the reference numerals are as follows：
100、200：Image Sensor
100E：Element
1000：Method
110：It can be seen that light receiver
1100：Step
1200：Step
112：Visible light sensed layer
114：Infrared light penetrates filter layer
116：Colorized optical filtering layers of balls
116a：Red filter unit
116b：Blue filter unit
116c：Green filter unit
116E：Chromatic filter layer
120：Infrared light receiver
220：Infrared light receiver
122：Infrared light sensed layer
124：White filter layer
126：Infrared light penetrates optical filtering layers of balls
126E：Infrared light penetrates filter layer
226：Infrared light penetrates filter layer
224：White optical filtering layers of balls
ML：Microlens layer
PL：Flatness layer
WA：Wafer layer
Specific implementation mode
Present disclose provides many different embodiments or example, to the different characteristic of implementation the displosure.For simplification
The specific example of the disclosure, some elements and layout can be in following explanation.Certainly, these are only example rather than to limit
The disclosure.If being formed in above second feature for example, referring to fisrt feature in subsequent instruction, this may include fisrt feature with
Second feature is the embodiment being in direct contact；This can also include that other features are also formed between fisrt feature and second feature
Embodiment, this makes fisrt feature be not in direct contact with second feature.In addition, the disclosure may repeat in various examples
Graphical sysmbol and/or word.This repeats to be for concise and clearly purpose, but the various implementations that decision is not discussed in itself
Relationship between example and/or setting.
Furthermore spatially opposite term, such as beneath, following, relatively low, above, higher etc., are solved for easily
Release the relationship in the example shown between an elements or features and another elements or features.These spatially opposite term in addition to
Cover the direction painted in the example shown, also contemplated device and using or operating upper different direction.These devices can also be revolved
Turn (such as be rotated by 90 ° or rotate to other directions), and spatially opposite description used herein can also equally have phase
Corresponding explanation.
Fig. 1 is the sectional view for the Image Sensor 100 for being painted first embodiment according to the present invention.As shown in Figure 1, image
Sensor 100 includes visible light receiver 110 and infrared light receiver 120.It can be seen that light receiver 110 is to receive visible light,
Infrared light receiver 120 is receiving infrared light.
As shown in Figure 1, visible light receiver 110 includes visible light sensed layer 112, infrared cut of light (IRCut) filter layer
114 and colorized optical filtering layers of balls 116.Colorized optical filtering layers of balls 116 is set on infrared cut of light filter layer 114, and infrared light is cut
Only filter layer 114 is set in visible light sensed layer 112, to provide colourama to visible light sensed layer 112.Visible light sensed layer
112 correspondingly generate main image signal to receive visible light.In the present embodiment, it is seen that light sensing layer 112 includes at least
One optical diode is to sense colourama.Optical diode can be Complementary MOS (complementary metal oxide
Semiconductor, CMOS) diode.However, embodiments of the present invention are not limited thereto.
Infrared cut of light filter layer 114 is blocking infrared light.In other words, when light passes through infrared cut of light filter layer
When 114, infrared cut of light filter layer 114 can block the transmission of infrared light.In the present embodiment, infrared cut of light filter layer 114
Wavelength is blocked to be more than 850 nanometers of light, but embodiments of the present invention are not limited thereto.
Colorized optical filtering layers of balls 116 to assemble visible light and provide colourama.In the present embodiment, colorized optical filtering layers of balls
116 include red filter unit 116a, blue filter unit 116b and green filter unit 116c, but the embodiment of the present invention
It is without being limited thereto.
As shown in Figure 1, infrared light receiver 120 includes infrared light light sensing layer 122, white filter layer 124 and infrared
Light penetrates (IR Pass) optical filtering layers of balls 126.Infrared light penetrates optical filtering layers of balls 126 and is set on white filter layer 124, and white
Filter layer 124 is set on infrared light light sensing layer 122, to provide infrared light to infrared light light sensing layer 122.Infrared light light sensation
It surveys layer 122 and correspondingly generates assisted image signal to receive infrared light.In the present embodiment, infrared light sensed layer 122 is wrapped
Containing an at least optical diode to sense infrared light.Optical diode can be Complementary MOS diode.However, the present invention
Embodiment is without being limited thereto.
Infrared light penetrates optical filtering layers of balls 126 to assemble infrared light and block visible light.In other words, when light is across infrared
When light penetrates optical filtering layers of balls 126, infrared light penetrate optical filtering layers of balls 126 can blocking visible light transmission.In the present embodiment, infrared
Light penetrates the light that optical filtering layers of balls 126 blocks wavelength to be less than 850 nanometers, but embodiments of the present invention are not limited thereto.
White filter layer 124 is making infrared light pass through.In the present embodiment, white filter layer 124 is white photoresist, but
Embodiments of the present invention are not limited thereto.
Specifically, when Image Sensor 100 is to sense object (such as iris), by colorized optical filtering layers of balls 116 with
Infrared light penetrates optical filtering layers of balls 126 and carrys out Focused objects.Furthermore the thickness and infrared light of change colorized optical filtering layers of balls 116 can be passed through
The thickness of optical filtering layers of balls 126 is penetrated to adjust the focusing of Image Sensor 100.It should be noted that in the present embodiment, colour filter
The thickness that the thickness of photosphere 116 penetrates optical filtering layers of balls 126 with infrared light is substantially equal, but the embodiment of the present invention is not limited to
This.
As shown in Figure 1, visible light receiver 110 also includes wafer layer WA and flatness layer PL with infrared light receiver 120.
Wafer layer WA is formed in visible light sensed layer 112 makes infrared cut of light filter layer in infrared light sensed layer 122 to provide substrate
114 are formed thereon with white filter layer 124.In the present embodiment, wafer layer WA is glass wafer, but the embodiment of the present invention
It is without being limited thereto.It should be noted that in the present embodiment, the thickness of the thickness of infrared cut of light filter layer 114 and white filter layer 124
Degree is substantially equal, but embodiments of the present invention are not limited thereto.
Flatness layer PL is formed in infrared cut of light filter layer 114 makes coloured silk on white filter layer 124 to provide flat surfaces
Color optical filtering layers of balls 116 penetrates optical filtering layers of balls 126 with infrared light and is arranged on.Flatness layer PL also provides good interface to assist coloured silk
Color optical filtering layers of balls 116 penetrates optical filtering layers of balls 126 with infrared light and is attached on flatness layer PL.
The light path of infrared light received by infrared light sensed layer 122 is since infrared light penetrates optical filtering layers of balls 126
Extend through flatness layer PL and white filter layer 124.Compared to traditional Image Sensor, Image Sensor 100 is because red
The light path of outer light is reduced, therefore the infrared light that Image Sensor 100 receives has smaller loss of light intensity.So image sense
Surveying the infrared light received by device 100 has preferable luminous intensity to meet the demand of user.
Fig. 2 is the sectional view for being painted Image Sensor 200 according to the second embodiment of the present invention.As shown in Fig. 2, image
Sensor 200 includes visible light receiver 110 and infrared light receiver 220, and mid-infrared light receiving part 220 is worn comprising infrared light
Filter photosphere 226 and white optical filtering layers of balls 224.The structure of Image Sensor 200 is similar to the structure of Image Sensor 100, no
It is that white filter layer 124 penetrates optical filtering layers of balls 126 with infrared light and penetrates filter layer 226 and white by infrared light respectively with place
Optical filtering layers of balls 224 is replaced.
Infrared light penetrates filter layer 226 to block visible light.In other words, when light penetrates filter layer across infrared light
When 226, infrared light penetrate filter layer 226 can blocking visible light transmission.In the present embodiment, infrared light penetrates filter layer 226
Wavelength is blocked to be less than 850 nanometers of light, but embodiments of the present invention are not limited thereto.
White optical filtering layers of balls 224 is assembling light and pass light through.In the present embodiment, white optical filtering layers of balls 224 is white
Coloured light hinders, but embodiments of the present invention are not limited thereto.
Specifically, when Image Sensor 200 is to sense object (such as iris), by colorized optical filtering layers of balls 116 with
White optical filtering layers of balls 224 carrys out Focused objects.Furthermore the thickness for changing colorized optical filtering layers of balls 116 and white optical filtering layers of balls can be passed through
224 thickness adjusts the focusing of Image Sensor 200.It should be noted that in the present embodiment, colorized optical filtering layers of balls 116
Thickness and the thickness of white optical filtering layers of balls 224 are substantially equal, but embodiments of the present invention are not limited thereto.
The light path of infrared light received by infrared light sensed layer 122 is to extend to pass through since white optical filtering layers of balls 224
It wears flatness layer PL and infrared light penetrates filter layer 226.Similar to Image Sensor 100, received by Image Sensor 200
Infrared light has preferable luminous intensity to meet the demand of user.
It is the formation Image Sensor for being painted first embodiment according to the present invention that Fig. 3, which is please referred to, with Fig. 4 a to Fig. 4 b, Fig. 3
The flow chart of 100 method 1000.Fig. 4 a to Fig. 4 b are the formation Image Sensor for being painted first embodiment according to the present invention
The sectional view of Image Sensor 100 corresponding to the step 1100-1200 of 100 method 1000.Method 1000 starts from step
1100.In step 1100, element 100E as shown in fig. 4 a includes visible light sensed layer 112, infrared light sensed layer 122, crystalline substance
Circle layer WA, infrared cut of light filter layer 114, white filter layer 124, flatness layer PL, chromatic filter layer 116E, infrared light penetrate filter
Photosphere 126E and microlens layer ML, wherein microlens layer ML are formed in chromatic filter layer 116E and penetrate filter layer with infrared light
The upper masks to penetrate filter layer 126E as chromatic filter layer 116E and infrared light of 126E.It should be noted that microlens layer ML
Material can be epoxy resin, optical cement, acrylic material (polymethylmethacrylates, PMMAs), plasticized polyurethane
Glue material (polyurethanes, PUs), silica gel material (polydimethylsiloxane, PDMS) or other thermmohardenings or light
The translucent material of hardening, but embodiments of the present invention are not limited thereto.
As shown in Figure 4 b, in the step 1200 of method 1000, by etch process come etched elements 100E.It is specific and
Speech etches microlens layer ML, distinguishes so that remaining chromatic filter layer 116E penetrates filter layer 126E with remaining infrared light
With the upper surface substantially the same with the upper surface of microlens layer ML, colorized optical filtering layers of balls as shown in Figure 1 is formed whereby
116 penetrate optical filtering layers of balls 126 with infrared light.In this way, forming Image Sensor 100.
It should be noted that the method for forming Image Sensor 200 is similar to the method for forming Image Sensor 100.Therefore,
This will not be repeated here for the description of method about formation Image Sensor 200.
It can be seen from the above, the present invention Image Sensor structure can effectively improve it is red received by Image Sensor
The luminous intensity of outer light reduces analyze optical signalling (such as image letter subsequently in other instruments whereby to meet the demand of user
Number) when degree of difficulty.
Foregoing has outlined the features of several embodiments, therefore those skilled in the art can know more about the aspect of the disclosure.
It will be understood by a person skilled in the art that arriving, the disclosure can be designed or modified as basis easily other processing procedures and knot
Structure realizes target identical with these embodiments described herein and/or reaches identical advantage whereby.People in the art
Member also it should be understood that, these equivalent construction are without departing from the spirit and scope of the disclosure, and they can not depart from this
Various changes, replacement and variation are made under the premise of open spirit and scope.
Claims (16)
1. a kind of Image Sensor, including：
One visible light receiver, to receive a visible light, wherein the visible light receiver include a colorized optical filtering layers of balls to
Assemble the visible light；And
One infrared light receiver, to receive an infrared light, wherein the infrared light receiver penetrates optical filtering ball comprising an infrared light
Layer is assembling the infrared light.
2. Image Sensor as described in claim 1, the wherein visible light receiver also include：
One visible light optical diode；And
One infrared cut of light filter layer is set on the visible light optical diode；
Wherein the colorized optical filtering layers of balls is set on the infrared cut of light filter layer, and the visible light passes through the colorized optical filtering layers of balls
And the infrared cut of light filter layer and received by the visible light optical diode.
3. Image Sensor as claimed in claim 2, the wherein infrared light receiver also include：
One infrared light optical diode；And
One white filter layer, is set on the infrared light optical diode；
Wherein the infrared light penetrates optical filtering layers of balls and is set on the white filter layer, and the infrared light penetrates filter across the infrared light
Photosphere and the white filter layer and received by the infrared light optical diode.
4. Image Sensor as claimed in claim 3 also includes a wafer layer, it is infrared with this to be located at the visible light optical diode
On light optical diode, a first part of the wherein wafer layer is located in the visible light receiver, and the one second of the wafer layer
Part is located in the infrared light receiver.
5. the first part of Image Sensor as claimed in claim 4, the wherein wafer layer is located at infrared cut of light filter
Between photosphere and the visible light optical diode, and the second part of the wafer layer is located at the white filter layer and the infrared light light
Between diode.
6. Image Sensor as described in claim 1, wherein the colorized optical filtering layers of balls include a red filter unit, a green
Filter unit and a blue filter unit.
Include also a flatness layer 7. Image Sensor as described in claim 1, to provide a flat surfaces, the wherein coloured silk
Color optical filtering layers of balls is set on the flat surfaces.
It is connect with the infrared light 8. Image Sensor as claimed in claim 7, the wherein flatness layer are located at the visible light receiver
In receipts portion.
9. a kind of Image Sensor, including：
One visible light receiver, to receive a visible light, wherein the visible light receiver include a colorized optical filtering layers of balls to
Assemble the visible light；And
One infrared light receiver, to receive an infrared light, the wherein infrared light receiver include a white optical filtering layers of balls to
Assemble the infrared light.
10. Image Sensor as claimed in claim 9, the wherein visible light receiver also include：
One visible light optical diode；And
One infrared cut of light filter layer is set on the visible light optical diode；
Wherein the colorized optical filtering layers of balls is set on the infrared cut of light filter layer, and the visible light passes through the colorized optical filtering layers of balls
And the infrared cut of light filter layer and received by the visible light optical diode.
11. Image Sensor as claimed in claim 9, the wherein infrared light receiver also include：
One infrared light optical diode；And
One infrared light penetrates filter layer, is set on the infrared light optical diode；
Wherein the white optical filtering layers of balls is set to the infrared light and penetrates on filter layer, the infrared light pass through the white optical filtering layers of balls with
And the infrared light penetrates filter layer and is received by the infrared light optical diode.
12. Image Sensor as claimed in claim 11 also includes a wafer layer, it is red with this to be located at the visible light optical diode
On outer smooth optical diode, a first part of the wherein wafer layer is located in the visible light receiver, and the 1 of the wafer layer
Two parts are located in the infrared light receiver.
13. the first part of Image Sensor as claimed in claim 12, the wherein wafer layer is located at the infrared cut of light
Between filter layer and the visible light optical diode, and the second part of the wafer layer is located at the infrared light and penetrates filter layer and be somebody's turn to do
Between infrared light optical diode.
14. Image Sensor as claimed in claim 9, wherein the colorized optical filtering layers of balls include a red filter unit, one green
Color filter unit and a blue filter unit.
Include also a flatness layer 15. Image Sensor as claimed in claim 9, to provide a flat surfaces, the wherein coloured silk
Color optical filtering layers of balls is set on the flat surfaces.
16. Image Sensor as claimed in claim 15, the wherein flatness layer are located at the visible light receiver and the infrared light
In receiving part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710213646.1A CN108666329A (en) | 2017-04-01 | 2017-04-01 | Image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710213646.1A CN108666329A (en) | 2017-04-01 | 2017-04-01 | Image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108666329A true CN108666329A (en) | 2018-10-16 |
Family
ID=63784768
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710213646.1A Pending CN108666329A (en) | 2017-04-01 | 2017-04-01 | Image sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108666329A (en) |
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|---|---|---|---|---|
| CN101449381A (en) * | 2006-04-03 | 2009-06-03 | 凸版印刷株式会社 | Color image sensor and method for fabricating color image sensor |
| US20110013055A1 (en) * | 2009-07-16 | 2011-01-20 | Samsung Electronics Co., Ltd. | Optical sensor and semiconductor device |
| CN102202185A (en) * | 2010-03-24 | 2011-09-28 | 索尼公司 | Physical information acquisition device, solid-state imaging device and physical information acquisition method |
| CN104871527A (en) * | 2012-12-04 | 2015-08-26 | （株）赛丽康 | CMOS image sensor including infrared pixels having improved spectral properties, and method of manufacturing same |
| CN204887163U (en) * | 2014-06-26 | 2015-12-16 | 半导体元件工业有限责任公司 | Image pel array and camera module |
-
2017
- 2017-04-01 CN CN201710213646.1A patent/CN108666329A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101449381A (en) * | 2006-04-03 | 2009-06-03 | 凸版印刷株式会社 | Color image sensor and method for fabricating color image sensor |
| US20110013055A1 (en) * | 2009-07-16 | 2011-01-20 | Samsung Electronics Co., Ltd. | Optical sensor and semiconductor device |
| CN102202185A (en) * | 2010-03-24 | 2011-09-28 | 索尼公司 | Physical information acquisition device, solid-state imaging device and physical information acquisition method |
| CN104871527A (en) * | 2012-12-04 | 2015-08-26 | （株）赛丽康 | CMOS image sensor including infrared pixels having improved spectral properties, and method of manufacturing same |
| CN204887163U (en) * | 2014-06-26 | 2015-12-16 | 半导体元件工业有限责任公司 | Image pel array and camera module |
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Application publication date: 20181016 |