CN108666197B

CN108666197B - Pulse power source and semiconductor equipment

Info

Publication number: CN108666197B
Application number: CN201710208662.1A
Authority: CN
Inventors: 师帅涛
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2017-03-31
Filing date: 2017-03-31
Publication date: 2020-02-14
Anticipated expiration: 2037-03-31
Also published as: CN108666197A

Abstract

The invention provides a pulse power source and semiconductor equipment, which utilizes a continuous wave power source to replace the prior radio frequency pulse power source, and makes the output continuous wave power signal pass through a matcher firstly, so that an impedance detection device in the matcher can detect continuous voltage and current signals, thereby avoiding the problem of impedance mismatch, then utilizes a power distributor to decompose the matched continuous wave power signal into at least two paths of signals, one path of signal is subjected to phase shift by a phase shifter and then is superposed with the rest signals, thereby obtaining the radio frequency pulse signal, thus not only generating the radio frequency pulse signal, but also utilizing the pulse radio frequency energy to carry out the process to reduce the plasma induced damage, ensuring the impedance matching and improving the stability of the matcher, thereby further improving the impedance stability of a reaction chamber, particularly under the conditions of low duty ratio and high pulse frequency, the effect of improving the stability of the matcher is more obvious.

Description

Pulse power source and semiconductor equipment

Technical Field

The invention relates to the technical field of semiconductor equipment manufacturing, in particular to a pulse power source and semiconductor equipment.

Background

In semiconductor coating and etching equipment, radio frequency energy provided by a radio frequency power supply is generally transmitted into a chamber, gas (such as argon, helium, nitrogen, hydrogen and the like) in a high vacuum state is ionized to generate plasma containing a large amount of active particles such as electrons, ions, excited atoms, molecules, free radicals and the like, and the active particles and a wafer which is arranged in a cavity and exposed in the plasma environment generate complex interaction, so that various physical and chemical reactions occur on the surface of a wafer material, the surface performance of the material is changed, and the coating and etching processes of the wafer are completed.

The pulse Plasma technology can reduce Plasma Induced Damage (PID) caused by continuous wave radio frequency energy, improve load effect in the process, improve the selection ratio of hole filling and etching, and increase the process adjusting means and window, so the design of the pulse power source is very critical.

As shown in fig. 1a, a pulse type physical vapor deposition apparatus for a coating process includes: the device comprises a reaction chamber 5, a target 4, a magnetron 7, a direct current power supply 6, a base 3, a matcher 8 and a radio frequency pulse power supply 9. The dc power supply 6, the target 4 and the magnetron 7 form an upper electrode, and the dc power supply 6 applies dc power to the target 4 to generate plasma and attract ions to bombard the target 4, so that the material of the target 4 can be sputtered and deposited on a wafer (not shown) supported on the base 3. The radio frequency pulse power supply 9, the matcher 8 and the base 3 form a lower electrode, radio frequency energy is generated by adopting a pulse technology and fed into the reaction chamber 5, specifically, the radio frequency pulse power supply 9 generates a radio frequency pulse signal which is loaded on the base 3 through the matcher 8, and the radio frequency power generates radio frequency self-bias voltage to attract ions to fill the pores of the wafer. By adjusting the pulse frequency and duty cycle, the temperature of the electrons can be adjusted to reduce the energy of particles bombarding the wafer, thereby meeting the requirements of processes of 20nm and below for low damage. The waveform of the rf pulse signal is shown in fig. 1b, the pulse-on duration of the loading signal is t1, the pulse-off duration is t2, the pulse frequency is f 1/(t1+ t2), and the pulse duty ratio D is t1/(t1+ t 2).

Because the radio frequency pulse power supply 9 generates discontinuous pulse signals, the impedance detection device in the matcher 8 determines impedance by collecting voltage and current signals, and the voltage and current signals are continuous signals, so that the impedance detected by the impedance detection device cannot follow the change of the pulse signals, the matcher 8 is mismatched, and the whole process is stopped, and particularly, the mismatch condition of the matcher 8 is more obvious under the conditions of low duty ratio and high pulse frequency.

Disclosure of Invention

The present invention addresses the above-identified deficiencies in the prior art by providing a pulsed power source and semiconductor device that partially addresses the problem of impedance mismatch.

In order to solve the technical problems, the invention adopts the following technical scheme:

the invention provides a pulse power source, which comprises a matcher, a continuous wave power source, a power divider, a first phase shifter and a first power combiner, wherein the power divider is provided with at least two output ends, and the first power combiner is provided with at least two input ends;

the input end and the output end of the matcher are respectively connected with the output end of the continuous wave power source and the input end of the power divider, the first output end of the power divider is connected with the first input end of the first power combiner, and the second output end of the power divider is connected with the second input end of the first power combiner through the first phase shifter;

after passing through the matcher, the continuous wave power signal output by the continuous wave power source is distributed into at least two paths of power signals by the power distributor, and after the phase of at least one path of power signal is changed by the first phase shifter, the power signal and the rest of power signals are synthesized into a pulse power signal by the first power synthesizer and output.

Preferably, the frequency of the continuous wave power source is equal to the frequencies of the matching unit, the power divider, the first phase shifter and the first power combiner;

and the frequency is 400KHz, 2MHz, 13.56MHz, 27MHz, 40MHz, 60MHz or 100 MHz.

Preferably, the first phase shifter is an electrically controlled phase shifter or a mechanically controlled phase shifter.

Preferably, the phase shift degree of the first phase shifter is 180 degrees, and the phase shift time is the same.

Preferably, the power signal ratios output by the plurality of output ends of the power divider are equal and constant.

The invention also provides a pulse power source, which comprises a matcher, a continuous wave power source, a power divider, a second phase shifter, a second power synthesizer, a third phase shifter and a third power synthesizer; said power divider having at least four outputs, said second and third power combiners having at least two inputs;

the input end and the output end of the matcher are respectively connected with the output end of the continuous wave power source and the input end of the power divider, the first output end of the power divider is connected with the first input end of the second power combiner, and the second output end of the power divider is connected with the second input end of the second power combiner through the second phase shifter;

a third output end of the power divider is connected with a first input end of the third power combiner, and a fourth output end of the power divider is connected with a second input end of the third power combiner through the third phase shifter;

after passing through the matcher, the continuous wave power signals output by the continuous wave power source are distributed into two groups of power signals by the power distributor, each group of power signals comprises at least two paths of power signals, and after the phase of one path of power signal in the first group of power signals is changed by the second phase shifter, the power signals and the rest of power signals in the first group of power signals are synthesized into pulse power signals by the second power synthesizer and then output; and one path of power signal in the second group of power signals changes the phase through the third phase shifter, and then is synthesized with the rest power signals in the second group of power signals through the third power synthesizer to form a pulse power signal for output.

Preferably, the frequency of the continuous wave power source is equal to the frequencies of the matching unit, the power divider, the second phase shifter, the second power combiner, the third phase shifter, and the third power combiner;

and the frequency is 400KHz, 2MHz, 13.56MHz, 27MHz, 40MHz, 60MHz or 100 MHz.

Preferably, the second phase shifter and the third phase shifter are electrically controlled phase shifters or mechanically controlled phase shifters.

Preferably, the phase shift degree of the second phase shifter is 180 degrees, and the phase shift time is the same; the phase shift degree of the third phase shifter is 180 degrees, and the phase shift time is the same.

The invention also provides a semiconductor device comprising a pulsed power source as described above.

Preferably, the semiconductor equipment is physical vapor deposition equipment;

the output end of the pulse power source is connected with a base or a target of the physical vapor deposition equipment; or,

the number of the pulse power sources is two, wherein the output end of one pulse power source is connected with the base of the physical vapor deposition equipment, and the output end of the other pulse power source is connected with the target of the physical vapor deposition equipment.

Preferably, the semiconductor equipment is plasma etching equipment;

the number of the pulse power source is one, and the output end of the pulse power source is connected with a base of the etching equipment or a plasma generating device of the plasma etching equipment; or,

the number of the pulse power sources is two, wherein the output end of one pulse power source is connected with the base of the plasma etching equipment, and the output end of the other pulse power source is connected with the plasma generating device of the plasma etching equipment.

Preferably, the semiconductor equipment is physical vapor deposition equipment;

one output end of the pulse power source is connected with the base of the physical vapor deposition equipment; and the other output end of the pulse power source is connected with a target of the physical vapor deposition equipment.

Preferably, the semiconductor equipment is plasma etching equipment;

one output end of the pulse power source is connected with a base of the plasma etching equipment; and the other output end of the pulse power source is connected with a plasma generating device of the plasma etching equipment.

The invention can realize the following beneficial effects:

the invention uses the continuous wave power source to replace the prior radio frequency pulse power source, and the output continuous wave power signal passes through the matcher so that the impedance detection device in the matcher can detect continuous voltage and current signals, thereby avoiding the problem of impedance mismatch, then decomposing the matched continuous wave power signal into at least two paths of signals by using a power divider, superposing one path of signal with the rest of signals after phase shifting by a phase shifter to obtain a radio frequency pulse signal, thus, not only can generate radio frequency pulse signals and reduce plasma induced damage by using pulse radio frequency energy to carry out the process, but also can ensure impedance matching and improve the stability of the matcher, therefore, the impedance stability of the reaction chamber is further improved, and especially under the conditions of low duty ratio and high pulse frequency, the effect of improving the stability of the matcher is more obvious.

Drawings

FIG. 1a is a schematic diagram of a conventional semiconductor device;

FIG. 1b is a pulse timing diagram of a conventional RF pulse power supply;

fig. 2a is a schematic structural diagram of a pulse power source according to embodiment 1 of the present invention;

fig. 2b is a schematic structural diagram of a pulse power source according to embodiment 2 of the present invention;

FIG. 2c is a timing diagram of a sinusoidal pulse signal output by the pulsed power source provided in

embodiments

1 and 2 of the present invention;

fig. 3 is a schematic structural diagram of a semiconductor apparatus (PVD apparatus) according to embodiment 3 of the present invention;

fig. 4 is a schematic structural diagram of a semiconductor apparatus (PVD apparatus) according to embodiment 4 of the present invention;

FIG. 5a is a schematic structural view of a semiconductor apparatus (PVD apparatus) according to embodiment 5 of the present invention;

fig. 5b is a schematic structural diagram of a semiconductor apparatus (PVD apparatus) according to embodiment 6 of the present invention.

Illustration of the drawings:

1. pulse power source 11, matching device 12, and continuous wave power source

13. A power divider 14, a first phase shifter 15, a first power combiner

2. Pulse power source 21, matching device 22, and continuous wave power source

23. A power divider 24, a first phase shifter 25, a first power combiner

26. Second phase shifter 27, second power combiner 3, and base

4. Target 5, reaction chamber 6 and direct current power supply

7. Magnetron 8, matcher 9 and radio frequency pulse power supply

Detailed Description

The technical solution of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.

The embodiment of the invention utilizes a continuous wave power source to generate continuous radio frequency signals, the continuous wave power signals are enabled to pass through a matcher to realize impedance matching, then a power divider, a phase shifter and a power synthesizer are utilized to convert the continuous radio frequency signals into pulse radio frequency signals, and then the pulse radio frequency signals are accessed into semiconductor equipment.

The technical solution of the present invention is described in detail below with reference to fig. 2a to 5 b.

Example 1

As shown in fig. 2a, embodiment 1 of the present invention provides a pulse power source 1, which includes a matcher 11, a continuous wave power source 12, a power divider 13, a first phase shifter 14, and a first power combiner 15. The power divider 13 has at least two outputs and the first power combiner 15 has at least two inputs.

An input end and an output end of the matcher 11 are respectively connected with an output end of the continuous wave power source 12 and an input end of the power divider 13, a first output end of the power divider 13 is connected with a first input end of a first power combiner 15, and a second output end of the power divider 13 is connected with a second input end of the first power combiner 15 through a first phase shifter 14.

The continuous wave power signal output by the continuous wave power source 12 is distributed into at least two paths of power signals by the power distributor 13 after passing through the matcher 11, and at least one path of power signal is combined with the rest of power signals into a pulse power signal for output after the phase of the power signal is changed by the first phase shifter 14 through the first power combiner 15.

The matcher 11 may be a digital matcher or an analog matcher. The matcher network type of the matcher 11 may be L-type, inverted L-type, pi-type or T-type.

The invention utilizes the continuous wave power source 12 to replace the existing radio frequency pulse power source, and makes the continuous wave power signal output by the continuous wave power source pass through the matcher 11, so that an impedance detection device in the matcher 11 can detect continuous voltage and current signals, thereby avoiding the problem of impedance mismatch, and then utilizes the power distributor 13 to decompose the continuous waveform signal sent by the continuous wave power source 12 into at least two paths of signals, wherein one path of signal is subjected to phase shifting by the phase shifter 14 and then is superposed with other signals to obtain the radio frequency pulse signal, thus not only being capable of generating the radio frequency pulse signal, but also being capable of utilizing the pulse radio frequency energy to carry out the process to reduce the plasma induced damage, ensuring the impedance matching, improving the stability of the matcher and further improving the impedance stability of the reaction chamber.

Specifically, the radio frequency of the continuous wave power source 12, the frequency of the matcher 11, the frequency of the power divider 13, the frequency of the first phase shifter 14, and the frequency of the first power synthesizer 15 are equal to ensure that the pulse power source 1 can normally operate.

The radio frequency of the continuous wave power source 12, the frequency of the matcher 11, the frequency of the power divider 13, the frequency of the first phase shifter 14, and the frequency of the first power synthesizer 15 may be 400KHz, 2MHz, 13.56MHz, 27MHz, 40MHz, 60MHz, or 100MHz, and the respective frequencies may be selected according to different application scenarios and actual needs.

Preferably, the first phase shifter 14 may be an electrically controlled phase shifter or a mechanically controlled phase shifter.

In the embodiment of the present invention, the pulsed power source 1 generates a sinusoidal rf pulse signal as an example.

Referring to fig. 2a and 2c, the continuous wave power source 12 generates a sine wave, and the power divider 13 is a dual-output power divider, that is, includes two outputs (i.e., a first output and a second output), and is capable of dividing a continuous sine radio frequency signal into two paths, where one path of the signal enters the first power combiner 15 through the first input via the first phase shifter 14, and the other path of the signal directly enters the first power combiner 15 through the second input.

In order to obtain a sinusoidal rf pulse signal, the phase shift of the first phase shifter 14 is 180 degrees and the phase shift time is the same. The power signal ratios output by the outputs of the power divider 13 are equal and constant.

Specifically, the phase shift angle of the first phase shifter 14 in the pulse-on period t1 may be set to 0 °, the phase shift angle in the pulse-off period t2 may be set to 180 °, the pulse-on period and the pulse-off period may be set to be equal (i.e., t1 ═ t2), and the power ratio of the first output terminal and the second output terminal of the power divider 13 may be set to 1: 1. Thus, the power divider 13 equally divides the continuous wave output by the matcher 11 into two paths, one path is directly sent to the first power combiner 15, the other path is sent to the first power combiner 15 after being phase-shifted by the first phase shifter 14, the first power combiner 15 superposes the two paths of power to generate and output a sinusoidal radio frequency pulse signal, and the waveform of the sinusoidal radio frequency pulse signal is shown in fig. 2 c.

The pulse on-time of the sinusoidal radio frequency pulse signal is t1, the pulse off-time is t2, the pulse frequency is f 1/(t1+ t2), and the pulse duty ratio is D1/(t 1+ t 2). Comparing fig. 2c and fig. 1b, it can be seen that the waveform of the sinusoidal rf pulse signal of fig. 2c is the same as that of the sinusoidal rf pulse signal of fig. 1b, that is, the sinusoidal pulse signal output by the pulse power source 1 of the present invention is the same as that output by the existing pulse power source, and the rf pulse signal can be generated by the pulse power source 1 of the present invention, and the plasma induced damage can be reduced by performing the process using the pulsed rf energy of the rf pulse signal.

The pulse signal generated by the pulse power source 1 is not limited to a sinusoidal waveform, and may be any pulse waveform, for example, a square wave pulse signal or a triangular wave pulse signal. Specifically, the pulse waveform can be changed by changing the degree of phase shift of the first phase shifter 14 and the power ratio of the power divider 13.

The phase shift degree of the first phase shifter 14 and the power ratio of the power divider 13 can be adjusted according to actual needs, so that the waveform of the pulse signal output by the pulse power source 1 is adjusted, a radio frequency pulse modulation signal is obtained, the conversion of various waveforms is realized, the process window is enlarged, and the process cost is reduced.

The specific implementation manner of adjusting the waveform and frequency of the rf pulse signal according to the degree of phase shift, the power ratio, and the time of phase shift belongs to the prior art, and is not described herein again.

Example 2

Embodiment 2 of the present invention provides a pulse power source, and the difference between embodiment 2 and embodiment 1 is that a set of phase shifters and power combiners are added, so as to increase a set of rf pulse signal outputs.

As shown in fig. 2b, embodiment 2 provides a pulse power source 2, which includes a matching unit 21, a continuous wave power source 22, a power divider 23, a second phase shifter 24, a second power combiner 25, a third phase shifter 26, and a third power combiner 27. The power divider 23 has at least four outputs and the second power combiner 25 and the third power combiner 27 have at least two inputs.

An input end and an output end of the matcher 21 are respectively connected with an output end of the continuous wave power source 22 and an input end of the power divider 23, a first output end of the power divider 23 is connected with a first input end of a second power combiner 25, and a second output end of the power divider 23 is connected with a second input end of the second power combiner 25 through a second phase shifter 24. A third output of the power divider 23 is connected to a first input of said third power combiner 27 and a fourth output of the power divider 23 is connected to a second input of the third power combiner 27 via a third phase shifter 26.

After passing through the matcher 21, the continuous wave power signal output by the continuous wave power source 22 is distributed into two groups of power signals by the power distributor 23, each group of power signals includes at least two paths of power signals, and after one path of power signal in the first group of power signals changes the phase through the second phase shifter 24, the power signal and the rest of power signals in the first group of power signals are synthesized into a pulse power signal through the second power synthesizer 25 and output; one path of power signal in the second group of power signals changes the phase through the third phase shifter 26, and then is combined with the rest of power signals in the second group of power signals through the third power combiner 27 to form a pulse power signal for output. In the present embodiment, the continuous wave power source 22 generates a sine wave, and the power divider 23 is a four-output power divider, which includes four output terminals (i.e. a first output terminal, a second output terminal, a third output terminal, and a fourth output terminal), and is capable of dividing the continuous sine radio frequency signal into four paths, and dividing the four paths into two groups, one group being two-by-two. One of the first group of signals output from the power divider 23 enters the second power combiner 25 via the second phase shifter 24, and the other of the first group of signals directly enters the second power combiner 25; one of the second group of signals output from the power divider 23 enters the third power combiner 27 via the third phase shifter 26, and the other of the second group of signals directly enters the third power combiner 27.

Specifically, the radio frequency of the continuous wave power source 22, the frequency of the matcher 21, the frequency of the power divider 23, the frequency of the first phase shifter 24, the frequency of the second phase shifter 26, the frequency of the first power synthesizer 25, and the frequency of the second power synthesizer 27 are equal to ensure that the pulse power source 2 can normally operate. In order to obtain the second set of sinusoidal rf pulse signals, the phase shift degree of the second phase shifter 24 is 180 degrees and the phase shift time is the same, and the phase shift degree of the third phase shifter 26 is 180 degrees and the phase shift time is the same. The power signal ratios output by the outputs of the power divider 13 are equal and constant.

Specifically, the phase shift angle of the second phase shifter 24 may be set to 0 ° for the pulse-on duration t1, 180 ° for the pulse-off duration t2, and the pulse-on duration and the pulse-off duration may be set to be equal (i.e., t1 — t 2). And setting the phase shift angle of the third phase shifter 26 to 0 ° for the pulse-on duration t1, setting the phase shift angle to 180 ° for the pulse-off duration t2, and setting the pulse-on duration and the pulse-off duration to be equal (i.e., t1 ═ t2), and setting the power ratio of the first, second, third, and fourth outputs of the power divider 23 to 1:1:1: 1.

Preferably, the second phase shifter 24 and/or the third phase shifter 26 may be electrically controlled phase shifters or mechanically controlled phase shifters.

The pulse power source of embodiment 1 outputs a radio frequency pulse signal, and the radio frequency pulse signal can be applied to the upper electrode or the lower electrode of the semiconductor device (i.e. the pulse power source 1 is applied to the upper electrode or the lower electrode of the semiconductor device separately), or by providing two pulse power sources 1 described in embodiment 1, the radio frequency pulse signals output by the two pulse power sources 1 are applied to the upper electrode and the lower electrode of the semiconductor device, respectively. The pulse power source 2 of embodiment 2 can simultaneously output two rf pulse signals, one rf pulse signal is applied to the upper electrode of the semiconductor device, and the other rf pulse signal is applied to the lower electrode of the semiconductor device (i.e. the pulse power source 2 is simultaneously applied to the upper electrode and the lower electrode of the semiconductor device).

The invention also provides a semiconductor device comprising a pulsed power source as described above. The structure of the semiconductor device will be described in detail below with reference to fig. 3, 4, 5a, 5b, and embodiments 3 to 5.

Example 3

As shown in fig. 3, embodiment 3 provides a semiconductor apparatus, which is a physical vapor deposition apparatus and includes a pulsed power source 1, a reaction chamber 5, a susceptor 3 and a target 4, wherein the target 4 is hermetically connected to a sidewall of the reaction chamber 5, and the susceptor 3 is accommodated in the reaction chamber 5. The pulsed power source 1 is the pulsed power source provided in embodiment 1, wherein the pulsed power source 1 is one, and an output end of the pulsed power source 1 (i.e., an output end of the first power combiner 15) is connected to the susceptor 3 of the physical vapor deposition apparatus.

The semiconductor device further includes a dc power supply 6 and a magnetron 7, the dc power supply 6, the target 4 and the magnetron 7 forming an upper electrode, the dc power supply 6 applying a dc power to the target 4 to generate a plasma.

In embodiment 3, the pulse power source 1 in embodiment 1 is applied to the lower electrode of the semiconductor device alone, and the upper electrode of the semiconductor device is still loaded with the dc power, the continuous wave power source 12 is used to replace the existing rf pulse power source, and the output continuous wave power signal is passed through the matching box 11, so that the impedance detection device in the matching box 11 can detect the continuous voltage and current signals, thereby avoiding the problem of impedance mismatch, and then the power divider 13 is used to decompose the continuous waveform signal sent by the continuous wave power source 12 into at least two signals, one signal is phase-shifted by the first phase shifter 14 and then superposed with the other signals to obtain the rf pulse signal, so that not only the rf pulse signal can be generated, the plasma induced damage can be reduced by using the pulsed rf energy, but also the impedance matching can be ensured, the stability of the matching device 11 is improved, so that the impedance stability of the reaction chamber is further improved, and especially under the conditions of low duty ratio and high pulse frequency, the effect of improving the stability of the matching device 11 is more obvious.

It should be noted that the semiconductor device may also be a plasma etching device, in which case the output of the pulsed power source 1 is connected to the base of the etching device.

Example 4

As shown in fig. 4, embodiment 4 provides a semiconductor device which is a physical vapor deposition device, and embodiment 4 differs from embodiment 3 in that the pulse power source 1 in embodiment 1 is applied alone to the upper electrode of the semiconductor device.

As shown in fig. 4, the semiconductor apparatus includes: the device comprises a pulse power source 1, a reaction chamber 5, a base 3, a target 4 and a magnetron 7, wherein the target 4 is hermetically connected with the side wall of the reaction chamber 5, and the base 3 is accommodated in the reaction chamber 5. The pulsed power source 1 is the pulsed power source provided in embodiment 1, where the pulsed power source 1 is one, and an output end of the pulsed power source 1 (i.e., an output end of the first power combiner 15) is connected to the target 4 of the physical vapor deposition apparatus.

The semiconductor equipment further comprises a radio frequency pulse power supply 9 and a matcher 8, wherein the matcher 8 is respectively connected with the radio frequency pulse power supply 9 and the base 3, the matcher 8 and the radio frequency pulse power supply 9 form a lower electrode of the semiconductor equipment.

Example 5

As shown in fig. 5a, embodiment 5 provides a semiconductor device, the semiconductor device is a physical vapor deposition device, and embodiment 5 differs from

embodiments

3 and 4 in that embodiment 3 provides a semiconductor device in which one pulse power source 1 is applied only to a lower electrode of the semiconductor device, embodiment 4 provides a semiconductor device in which one pulse power source 1 is applied only to an upper electrode of the semiconductor device, and embodiment 5 provides a semiconductor device in which two pulse power sources 1 are applied respectively to an upper electrode and a lower electrode of the semiconductor device.

As shown in fig. 5a, the semiconductor apparatus includes: the device comprises a pulse power source 1, a reaction chamber 5, a base 3 and a target 4, wherein the target 4 is hermetically connected with the side wall of the reaction chamber 5, and the base 3 is accommodated in the reaction chamber 5. The pulse power source 1 is the pulse power source provided in embodiment 1, and the number of the pulse power sources 1 is two. The output end of one pulse power source 1 (i.e. the output end of the first power combiner 15) is connected with the pedestal 3, and the output end of the other pulse power source 1 (i.e. the output end of the first power combiner 15) is connected with the target 4 of the physical vapor deposition equipment.

It should be noted that the semiconductor device may also be a plasma etching device, in which case, the output end of one of the pulse power sources is connected to the pedestal of the plasma etching device, and the output end of the other pulse power source is connected to the plasma generating device of the plasma etching device. The plasma generating means is typically a coil.

Example 6

As shown in fig. 5b, embodiment 6 provides a semiconductor apparatus which is a physical vapor deposition apparatus, and embodiment 6 differs from embodiment 5 in that the semiconductor apparatus of embodiment 6 employs one pulse power source 2 of embodiment 2, and the semiconductor apparatus of embodiment 5 employs two pulse power sources 1 of embodiment 1.

As shown in fig. 5b, the semiconductor apparatus includes: the device comprises a pulse power source 2, a reaction chamber 5, a base 3 and a target 4, wherein the target 4 is hermetically connected with the side wall of the reaction chamber 5, and the base 3 is accommodated in the reaction chamber 5. The pulsed power source 2 is the pulsed power source provided in embodiment 2, wherein one output terminal of the pulsed power source 2 (i.e. the output terminal of the second power combiner 25) is connected to the susceptor 3 of the physical vapor deposition apparatus; the other output end of the pulse power source 2 (i.e. the output end of the third power synthesizer 27) is connected with the target 4 of the physical vapor deposition device.

It should be noted that the semiconductor device may also be a plasma etching device, in which case one output end of the pulse power source is connected to the pedestal of the plasma etching device, and the other output end of the pulse power source is connected to the plasma generating device of the plasma etching device. The plasma generating means is typically a coil.

Note that the semiconductor device of the present invention is not limited to the above-described physical vapor deposition or plasma etching device, and may be a Chemical Vapor Deposition (CVD) device or the like.

The pulse power source and the semiconductor equipment can generate radio frequency pulse signals with any waveform, duty ratio and frequency, and the radio frequency pulse signals are loaded to the upper electrode and the lower electrode of the semiconductor equipment to realize a pulse process.

It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims

1. A pulse power source comprises a matcher and is characterized by further comprising a continuous wave power source, a power divider, a first phase shifter and a first power combiner, wherein the power divider is provided with at least two output ends, and the first power combiner is provided with at least two input ends;

after passing through the matcher, the continuous wave power signal output by the continuous wave power source is distributed into at least two paths of power signals by the power distributor, and after the phase of at least one path of power signal is changed by the first phase shifter, the power signal and the rest of power signals are synthesized into a pulse power signal by the first power synthesizer and output;

the frequency of the continuous wave power source is equal to the frequencies of the matcher, the power divider, the first phase shifter and the first power synthesizer.

2. The pulsed power source of claim 1, wherein the frequency is 400KHz, 2MHz, 13.56MHz, 27MHz, 40MHz, 60MHz, or 100 MHz.

3. The pulsed power source of claim 1, wherein the first phase shifter is an electrically controlled phase shifter or a mechanically controlled phase shifter.

4. The pulsed power source of claim 1, wherein the first phase shifter is phase shifted by a degree of 180 degrees and for the same phase shift time.

5. The pulsed power source of claim 1, wherein the power signal ratios output by the plurality of outputs of the power splitter are equal and fixed.

6. A pulse power source comprises a matcher and is characterized by also comprising a continuous wave power source, a power divider, a second phase shifter, a second power combiner, a third phase shifter and a third power combiner; said power divider having at least four outputs, said second and third power combiners having at least two inputs;

after passing through the matcher, the continuous wave power signals output by the continuous wave power source are distributed into two groups of power signals by the power distributor, each group of power signals comprises at least two paths of power signals, and after the phase of one path of power signal in the first group of power signals is changed by the second phase shifter, the power signals and the rest of power signals in the first group of power signals are synthesized into pulse power signals by the second power synthesizer and then output; after the phase of one path of power signal in the second group of power signals is changed by the third phase shifter, the other path of power signal in the second group of power signals is synthesized into a pulse power signal by the third power synthesizer and then output;

the frequency of the continuous wave power source is equal to the frequencies of the matcher, the power divider, the second phase shifter, the second power synthesizer, the third phase shifter and the third power synthesizer.

7. The pulsed power source of claim 6, wherein the frequency is 400KHz, 2MHz, 13.56MHz, 27MHz, 40MHz, 60MHz, or 100 MHz.

8. The pulsed power source of claim 6, wherein the second phase shifter and the third phase shifter are electrically controlled phase shifters or mechanically controlled phase shifters.

9. The pulsed power source of claim 6, wherein the second phase shifter is phase shifted by a degree of 180 degrees and for the same phase shift time; the phase shift degree of the third phase shifter is 180 degrees, and the phase shift time is the same.

10. The pulsed power source of claim 6, wherein the power signal ratios output by the plurality of outputs of the power splitter are equal and fixed.

11. A semiconductor device comprising a pulsed power source according to any one of claims 1 to 5.

12. The semiconductor apparatus according to claim 11, wherein the semiconductor apparatus is a physical vapor deposition apparatus;

13. The semiconductor device according to claim 11, wherein the semiconductor device is a plasma etching device;

14. A semiconductor device comprising a pulsed power source according to any one of claims 6 to 10.

15. The semiconductor apparatus according to claim 14, wherein the semiconductor apparatus is a physical vapor deposition apparatus;

16. The semiconductor device according to claim 14, wherein the semiconductor device is a plasma etching device;