CN108663864B - 一种显示面板及其制作方法、工作方法和显示装置 - Google Patents
一种显示面板及其制作方法、工作方法和显示装置 Download PDFInfo
- Publication number
- CN108663864B CN108663864B CN201810795914.XA CN201810795914A CN108663864B CN 108663864 B CN108663864 B CN 108663864B CN 201810795914 A CN201810795914 A CN 201810795914A CN 108663864 B CN108663864 B CN 108663864B
- Authority
- CN
- China
- Prior art keywords
- passivation layer
- display panel
- liquid crystal
- source
- crystal molecules
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 238000002161 passivation Methods 0.000 claims abstract description 81
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 239000010409 thin film Substances 0.000 claims abstract description 32
- 239000013078 crystal Substances 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000011017 operating method Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 238000005452 bending Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1341—Filling or closing of cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133357—Planarisation layers
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
Abstract
本发明实施例公开了一种显示面板及其制作方法、工作方法和显示装置,其中,显示面板包括:衬底基板以及设置在衬底基板上的薄膜晶体管,薄膜晶体管包括:源漏电极和第一钝化层;其中,第一钝化层中设置有用于填充液晶分子的空间区域,源漏电极用于控制液晶分子的偏转。本发明实施例提供的技术方案将液晶分子填充在第一钝化层的空间区域中,无需对盒工艺,不仅能够简化制作工艺,保证液晶层在弯折过程中不易错位,而且还能够提高液晶显示装置的像素密度,从而达到较好的显示效果。
Description
技术领域
本发明实施例涉及显示技术领域,具体涉及一种显示面板及其制作方法、工作方法和显示装置。
背景技术
液晶显示装置(Liquid Crystal Display,简称LCD)是平板显示装置中的一种,液晶显示面板和背光模组是其中的重要部件,通过在液晶显示面板的一侧设置背光源,形成液晶显示装置,从而实现图像显示。
其中,显示面板包括:阵列基板、彩膜基板以及设置在阵列基板和彩膜基板之间的液晶层,其具体通过将阵列基板与彩膜基板对盒形成。
经发明人研究发现,现有的液晶显示装置不仅制作工艺复杂,液晶层在弯折过程中容易错位,而且像素密度较低,无法达到较好的显示效果。
发明内容
为了解决上述技术问题,本发明实施例提供了一种显示面板及其制作方法、工作方法和显示装置,不仅能够简化制作工艺,保证液晶层在弯折过程中不易错位,而且还能够提高液晶显示装置的像素密度,从而达到较好的显示效果。
第一方面,本发明实施例提供了一种显示面板,包括:衬底基板以及设置在所述衬底基板上的薄膜晶体管,所述薄膜晶体管包括:源漏电极和第一钝化层;
其中,所述第一钝化层中设置有用于填充液晶分子的空间区域,所述源漏电极用于控制所述液晶分子的偏转。
可选地,所述第一钝化层中还设置有用于向所述空间区域中填充液晶分子的灌晶孔。
可选地,所述显示面板还包括:第二钝化层和平坦层;
所述第二钝化层设置在所述第一钝化层远离所述衬底基板的一侧,用于密封所述灌晶孔;
所述平坦层设置在所述第二钝化层远离所述衬底基板的一侧。
可选地,所述显示面板还包括:彩色滤光片;
所述彩色滤光片设置在所述平坦层远离所述衬底基板的一侧。
可选地,所述显示面板还包括:第三钝化层;
所述第三钝化层设置在所述彩色滤光片远离所述衬底基板的一侧,用于保护所述彩色滤光片。
可选地,源漏电极之间的间距为10纳米~50微米,源漏电极的高度为10纳米~20微米。
第二方面,本发明实施例还提供一种显示装置,包括:上述显示面板、背光模组、第一偏光片和第二偏光片。
第三方面,本发明实施例还提供一种显示面板的制作方法,包括:
提供一衬底基板;
在所述衬底基板上形成包括源漏电极和第一钝化层的薄膜晶体管;其中,所述第一钝化层中设置有用于填充液晶分子的空间区域,所述源漏电极用于控制液晶分子的偏转。
可选地,所述在衬底基板上形成包括源漏电极和第一钝化层的薄膜晶体管包括:
在衬底基板上形成栅电极、有源层、绝缘层和源漏电极;
在源漏电极上采用溅射工艺形成设置有用于填充液晶分子的空间区域的第一钝化层;
在第一钝化层上形成用于向所述空间区域中填充所述液晶分子的灌晶孔;
通过所述灌晶孔向所述空间区域填充液晶分子。
可选地,所述在所述衬底基板上形成包括源漏电极和第一钝化层的薄膜晶体管之后,所述方法还包括:
在第一钝化层上形成用于密封所述灌晶孔的第二钝化层;
在所述第二钝化层上形成平坦层。
可选地,所述在所述第二钝化层上形成平坦层之后,所述方法还包括:
在平坦层上设置彩色滤光片。
可选地,所述在平坦层上设置彩色滤光片之后,所述方法还包括:
在彩色滤光片上设置用于保护所述彩色滤光片的第三钝化层。
第四方面,本发明实施例还提供一种显示面板的工作方法,应用于上述显示面板中,包括:
向所述源漏电极施加电压,使液晶分子发生偏转。
本发明实施例提供一种显示面板及其制作方法、工作方法和显示装置,其中,显示面板包括:衬底基板以及设置在所述衬底基板上的薄膜晶体管,所述薄膜晶体管包括:源漏电极和第一钝化层;其中,所述第一钝化层中设置有用于填充液晶分子的空间区域,所述源漏电极用于控制所述液晶分子的偏转。本发明实施例提供的技术方案将液晶分子填充在第一钝化层的空间区域中,无需对盒工艺,不仅能够简化制作工艺,保证液晶层在弯折过程中不易错位,而且还能够提高液晶显示装置的像素密度,从而达到较好的显示效果。
本发明的其它特征和优点将在随后的说明书中阐述,并且,部分地从说明书中变得显而易见,或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本发明技术方案的进一步理解,并且构成说明书的一部分,与本申请的实施例一起用于解释本发明的技术方案,并不构成对本发明技术方案的限制。
图1为本发明实施例提供的显示面板的结构示意图一;
图2为本发明实施例提供的显示面板的结构示意图二;
图3为本发明实施例提供的显示面板的结构示意图三;
图4为本发明实施例提供的显示面板的制作方法的流程图;
图5为本发明实施例提供的显示面板的制作方法的示意图一;
图6A为本发明实施例提供的显示面板的制作方法的示意图二;
图6B为图6A对应的俯视图;
图7A为本发明实施例提供的显示面板的制作方法的示意图三;
图7B为图7A对应的俯视图;
图8为本发明实施例提供的显示面板的制作方法的示意图四;
图9为本发明实施例提供的显示装置的结构示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚明白,下文中将结合附图对本发明的实施例进行详细说明。需要说明的是,在不冲突的情况下,本申请中的实施例及实施例中的特征可以相互任意组合。
在附图的流程图示出的步骤可以在诸如一组计算机可执行指令的计算机***中执行。并且,虽然在流程图中示出了逻辑顺序,但是在某些情况下,可以以不同于此处的顺序执行所示出或描述的步骤。
除非另外定义,本发明实施例公开使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本发明实施例中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系,当被描述的对象的绝对位置改变后,则该相对位置关系也可能相应地改变。
实施例一
图1为本发明实施例提供的显示面板的结构示意图一,如图1所示,本发明实施例提供的显示面板,包括:衬底基板10以及设置在衬底基板10上的薄膜晶体管,薄膜晶体管包括:源漏电极14和第一钝化层15,其中,第一钝化层15中设置有用于填充液晶分子20的空间区域150,源漏电极14用于控制液晶分子20的偏转。
可选地,衬底基板10的制作材料可以为玻璃、塑料、石英或聚酰亚胺等透明材料,本发明实施例对此不作任何限定。
具体的,如图1所示,薄膜晶体管还包括:栅电极11、绝缘层12、有源层13,可选地,薄膜晶体管的结构可以为顶栅结构,还可以为底栅结构,需要说明的是,图1是以薄膜晶体管为底栅结构为例进行说明的,本发明实施例对此不作任何限定。
可选地,第一钝化层15的制作材料可以为氧化硅和/或二氧化硅,本发明实施例对此不作任何限定。
可选地,空间区域150可以设置在源漏电极之间,以使得源漏电极14用于控制液晶分子20的偏转。
可选地,空间区域150的形状可以为方形、锥形或球形,具体根据实际需求确定,本发明实施例对此不作任何限定。
可选地,源漏电极之间的间距w为10纳米~50微米,源漏电极的高度h为10纳米~20微米。
本发明实施例提供的显示面板包括:衬底基板以及设置在衬底基板上的薄膜晶体管,薄膜晶体管包括:源漏电极和第一钝化层;其中,第一钝化层中设置有用于填充液晶分子的空间区域,源漏电极用于控制液晶分子的偏转。本发明实施例提供的技术方案将液晶分子填充在第一钝化层的空间区域中,无需对盒工艺,不仅能够简化制作工艺,保证液晶层在弯折过程中不易错位,而且还能够提高液晶显示装置的像素密度,从而达到较好的显示效果
可选地,第一钝化层15中还设置有用于向空间区域150中填充液晶分子20的灌晶孔(图中未示出)。
可选地,图2为本发明实施例提供的显示面板的结构示意图二,如图2所示,本发明实施例提供的显示面板还包括:第二钝化层16和平坦层17。
具体的,第二钝化层16设置在第一钝化层15远离衬底基板10的一侧,用于密封灌晶孔;平坦层17设置在第二钝化层16远离衬底基板10的一侧。
可选地,第二钝化层16的制作材料包括:氧化硅和/或氮化硅。
可选地,平坦层17的制作材料包括:氧化硅和/或氮化硅,具体用于使薄膜晶体管平坦化,便于在其上制作其他膜层。
可选地,图3为本发明实施例提供的显示面板的结构示意图三,如图3所示,本发明实施例提供的显示面板还包括:彩色滤光片18。
具体的,彩色滤光片18设置在平坦层17远离衬底基板10的一侧。彩色滤光片包括色阻层和黑矩阵层,其中,每个子像素区域对应一个能够通过该子像素区域颜色对应的色阻层,黑矩阵层用于间隔相邻色阻层。
可选地,如图3所示,显示面板还包括:第三钝化层19。
具体的,第三钝化层19设置在彩色滤光片18远离衬底基板10的一侧,用于保护彩色滤光片18。
可选地,本发明实施例提供的显示面板除衬底基板10之外的厚度为200~300微米。
实施例二
基于上述实施例的发明构思,本发明实施例还提供一种显示面板的制作方法,图4为本发明实施例提供的显示面板的制作方法的流程图,如图4所示,本发明实施例提供的显示面板的制作方法具体包括以下步骤:
步骤100、提供一衬底基板。
可选地,衬底基板的制作材料可以为玻璃、塑料、石英或聚酰亚胺等透明材料,本发明实施例对此不作任何限定。
步骤200、在衬底基板上形成包括源漏电极和第一钝化层的薄膜晶体管。
具体的,第一钝化层中设置有用于填充液晶分子的空间区域,源漏电极用于控制液晶分子的偏转。
本实施例中,步骤200具体包括以下步骤:在衬底基板上形成栅电极、有源层、绝缘层和源漏电极;在源漏电极上采用溅射工艺形成设置有用于填充液晶分子的空间区域的第一钝化层;在第一钝化层上形成用于向空间区域中填充液晶分子的灌晶孔;通过灌晶孔向空间区域填充液晶分子。
可选地,薄膜晶体管的结构可以为顶栅结构,还可以为底栅结构,本发明实施例对此不作任何限定。
可选地,第一钝化层的制作材料可以为氧化硅和/或二氧化硅,本发明实施例对此不作任何限定。
可选地,空间区域可以设置在源漏电极之间,以使得源漏电极用于控制液晶分子的偏转。
可选地,空间区域的形状可以为方形、锥形或球形,具体根据实际需求确定,本发明实施例对此不作任何限定。
可选地,源漏电极之间的间距为10纳米~50微米,源漏电极的高度为10纳米~20微米。
本发明实施例提供的显示面板的制作方法包括:提供一衬底基板,在衬底基板上形成包括源漏电极和第一钝化层的薄膜晶体管;其中,第一钝化层中设置有用于填充液晶分子的空间区域,源漏电极用于控制液晶分子的偏转。本发明实施例提供的技术方案将液晶分子填充在第一钝化层的空间区域中,无需对盒工艺,不仅能够简化制作工艺,保证液晶层在弯折过程中不易错位,而且还能够提高液晶显示装置的像素密度,从而达到较好的显示效果。
可选地,在步骤200之后,本发明实施例提供的显示面板的制作方法还包括:步骤300、在第一钝化层上形成用于密封灌晶孔的第二钝化层;在第二钝化层上形成平坦层。
可选地,在步骤300之后,本发明实施例提供的显示面板的制作方法还包括:在平坦层上设置彩色滤光片;在彩色滤光片上设置用于保护彩色滤光片的第三钝化层。
下面结合图5~8,以薄膜晶体管为顶栅结构为例,进一步描述本发明实施例提供的显示面板的制作方法,具体的,构图工艺包括:光刻胶涂覆、曝光、显影、刻蚀和光刻胶剥离等工艺。
步骤410、提供一衬底基板10,在衬底基板10上形成栅电极11、绝缘层12和有源层13,具体图5所示。
具体的,在形成栅电极之前,可以为衬底基板进行预清洗。
步骤420、在有源层13上形成源漏电极14,具体如图6A和6B所示,其中,图6B为图6A对应的俯视图,如图6B中没有示出绝缘层12。
可选地,源漏电极之间的间距为10纳米~50微米,源漏电极的高度为10纳米~2微米。
具体的,不与栅电极11重叠的源漏电极用于定义像素区域的左右侧,像素与具体根据液晶显示装置的要求设置。
步骤430、在源漏电极14上通过溅射工艺形成设置有用于填充液晶分子的空间区域150的第一钝化层15,并在第一钝化层15上形成灌晶孔151,具体的如图7A和7B所示,其中,图7B为图7A对应的俯视图。
具体的,在第一钝化层15位于像素区域的边缘处形成灌晶孔151。具体的,第一钝化层15作为一种高介电材料,能够使得源漏电极14形成一个大电容,用于存储像素驱动信号。
步骤440、通过灌晶孔向空间区域150充入液晶分子20,具体如图8所示。
步骤450、在第一钝化层15上形成用于密封灌晶孔151的第二钝化层16,在第二钝化层16上形成平坦层17,具体如图2所示。
步骤460、在平坦层17上形成彩色滤光片18和第三钝化层19,具体如图3所示。
实施例三
基于上述实施例的发明构思,本发明实施例还提供一种显示面板的工作方法,应用于实施例一提供的显示面板中,具体的,本发明实施例提供的显示面板的工作方法包括:向源漏电极施加电压,使液晶分子发生偏转。
具体的,当薄膜晶体管的栅极电压使薄膜晶体管关断时,向源漏电极施加电压,令源漏电极之间存在压差,使得液晶分子发生偏转,光线透过液晶分子显示该像素,当薄膜晶体管的栅极电压使薄膜晶体管打开时,源漏电极的电压一致,液晶分子恢复,光线无法透过液晶分子显示该像素。
实施例四
基于上述实施例的发明构思,本发明实施例还提供一种显示装置,图9为本发明实施例提供的显示装置的结构示意图,如图9所示,本发明实施例提供的显示装置包括:实施例一提供的显示面板、背光模组30、第一偏光片41和第二偏光片42。
具体的,背光模组30设置在衬底基板10远离栅电极11的一侧,第一偏光片41设置在背光模组30和衬底基板10之间,第二偏光片42设置在第三钝化层19远离衬底基板10的一侧。
可选地,背光模组30用于向显示面板提供光源,具体可以包括:背光源、导光板和光学膜层(例如:扩散片、棱镜片等),本发明实施例并不具体限定背光模组的结构。
在本实施例中,显示装置中的第一偏光片41和第二偏光片42的设置,使得背光模组提供的光线只能按特定方向振动的光线通过。
具体的,显示装置可以为:手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本发明实施例附图只涉及本发明实施例涉及到的结构,其他结构可参考通常设计。
为了清晰起见,在用于描述本发明的实施例的附图中,层或微结构的厚度和尺寸被放大。可以理解,当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时,该元件可以“直接”位于另一元件“上”或“下”,或者可以存在中间元件。
在不冲突的情况下,本发明的实施例即实施例中的特征可以相互组合以得到新的实施例。
虽然本发明所揭露的实施方式如上,但所述的内容仅为便于理解本发明而采用的实施方式,并非用以限定本发明。任何本发明所属领域内的技术人员,在不脱离本发明所揭露的精神和范围的前提下,可以在实施的形式及细节上进行任何的修改与变化,但本发明的专利保护范围,仍须以所附的权利要求书所界定的范围为准。
Claims (13)
1.一种显示面板,其特征在于,包括:衬底基板以及设置在所述衬底基板上的薄膜晶体管,所述薄膜晶体管包括:栅电极、源漏电极和第一钝化层;
其中,所述第一钝化层中设置有用于填充液晶分子的空间区域,所述空间区域设置在所述源漏电极之间,所述源漏电极和栅电极用于控制所述液晶分子的偏转。
2.根据权利要求1所述的显示面板,其特征在于,所述第一钝化层中还设置有用于向所述空间区域中填充液晶分子的灌晶孔。
3.根据权利要求2所述的显示面板,其特征在于,所述显示面板还包括:第二钝化层和平坦层;
所述第二钝化层设置在所述第一钝化层远离所述衬底基板的一侧,用于密封所述灌晶孔;
所述平坦层设置在所述第二钝化层远离所述衬底基板的一侧。
4.根据权利要求3所述的显示面板,其特征在于,所述显示面板还包括:彩色滤光片;
所述彩色滤光片设置在所述平坦层远离所述衬底基板的一侧。
5.根据权利要求4所述的显示面板,其特征在于,所述显示面板还包括:第三钝化层;
所述第三钝化层设置在所述彩色滤光片远离所述衬底基板的一侧,用于保护所述彩色滤光片。
6.根据权利要求1所述的显示面板,其特征在于,源漏电极之间的间距为10纳米~50微米,源漏电极的高度为10纳米~20微米。
7.一种显示装置,其特征在于,包括:如权利要求1~6任一项所述的显示面板、背光模组、第一偏光片和第二偏光片。
8.一种显示面板的制作方法,其特征在于,包括:
提供一衬底基板;
在所述衬底基板上形成包括栅电极、源漏电极和第一钝化层的薄膜晶体管;其中,所述第一钝化层中设置有用于填充液晶分子的空间区域,所述空间区域设置在所述源漏电极之间,所述源漏电极和栅电极用于控制液晶分子的偏转。
9.根据权利要求8所述的方法,其特征在于,所述在衬底基板上形成包括栅电极、源漏电极和第一钝化层的薄膜晶体管包括:
在衬底基板上形成栅电极、有源层、绝缘层和源漏电极;
在源漏电极上采用溅射工艺形成设置有用于填充液晶分子的空间区域的第一钝化层;
在第一钝化层上形成用于向所述空间区域中填充所述液晶分子的灌晶孔;
通过所述灌晶孔向所述空间区域填充液晶分子。
10.根据权利要求9所述的方法,其特征在于,所述在所述衬底基板上形成包括栅电极、源漏电极和第一钝化层的薄膜晶体管之后,所述方法还包括:
在第一钝化层上形成用于密封所述灌晶孔的第二钝化层;
在所述第二钝化层上形成平坦层。
11.根据权利要求10所述的方法,其特征在于,所述在所述第二钝化层上形成平坦层之后,所述方法还包括:
在平坦层上设置彩色滤光片。
12.根据权利要求11所述的方法,其特征在于,所述在平坦层上设置彩色滤光片之后,所述方法还包括:
在彩色滤光片上设置用于保护所述彩色滤光片的第三钝化层。
13.一种显示面板的工作方法,其特征在于,应用于权利要求1~6任一项所述的显示面板中,包括:
向所述源漏电极施加电压,使液晶分子发生偏转。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810795914.XA CN108663864B (zh) | 2018-07-19 | 2018-07-19 | 一种显示面板及其制作方法、工作方法和显示装置 |
PCT/CN2019/096537 WO2020015701A1 (zh) | 2018-07-19 | 2019-07-18 | 一种显示面板及其制作方法、驱动方法和显示装置 |
US16/631,331 US11092866B2 (en) | 2018-07-19 | 2019-07-18 | Display panel and manufacturing method thereof, driving method and display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810795914.XA CN108663864B (zh) | 2018-07-19 | 2018-07-19 | 一种显示面板及其制作方法、工作方法和显示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108663864A CN108663864A (zh) | 2018-10-16 |
CN108663864B true CN108663864B (zh) | 2021-01-26 |
Family
ID=63788554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810795914.XA Active CN108663864B (zh) | 2018-07-19 | 2018-07-19 | 一种显示面板及其制作方法、工作方法和显示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11092866B2 (zh) |
CN (1) | CN108663864B (zh) |
WO (1) | WO2020015701A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108663864B (zh) | 2018-07-19 | 2021-01-26 | 京东方科技集团股份有限公司 | 一种显示面板及其制作方法、工作方法和显示装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104238204A (zh) * | 2013-06-07 | 2014-12-24 | 业鑫科技顾问股份有限公司 | 像素电极的制造方法 |
CN105093764A (zh) * | 2015-08-07 | 2015-11-25 | 武汉华星光电技术有限公司 | 半透反式蓝相液晶显示器及其液晶显示模组 |
CN105867697A (zh) * | 2016-06-16 | 2016-08-17 | 厦门天马微电子有限公司 | 显示面板、显示装置及显示面板的制作方法 |
CN106773205A (zh) * | 2016-12-26 | 2017-05-31 | 京东方科技集团股份有限公司 | 显示面板及其制作方法以及显示装置 |
KR20170078243A (ko) * | 2015-12-29 | 2017-07-07 | 엘지디스플레이 주식회사 | 어레이 기판 및 이를 구비하는 표시장치 |
CN107065357A (zh) * | 2017-05-18 | 2017-08-18 | 深圳市华星光电技术有限公司 | 阵列基板及其制造方法、液晶显示面板 |
CN108008560A (zh) * | 2016-10-27 | 2018-05-08 | 乐金显示有限公司 | 液晶显示装置及其制造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3208658B2 (ja) * | 1997-03-27 | 2001-09-17 | 株式会社アドバンスト・ディスプレイ | 電気光学素子の製法 |
JP3391343B2 (ja) * | 1999-10-26 | 2003-03-31 | 日本電気株式会社 | アクティブマトリクス基板及びその製造方法 |
KR101107246B1 (ko) * | 2004-12-24 | 2012-01-25 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
US8928846B2 (en) * | 2010-05-21 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having dielectric film over and in contact with wall-like structures |
KR20150000610A (ko) * | 2013-06-25 | 2015-01-05 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
KR102461106B1 (ko) | 2015-11-27 | 2022-10-31 | 삼성디스플레이 주식회사 | 색변환 패널, 이의 제조 방법 및 이를 포함하는 표시 장치 |
US10459300B2 (en) | 2017-05-18 | 2019-10-29 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd | Array substrate and a method for fabricating the same, a liquid crystal display panel |
CN108663864B (zh) | 2018-07-19 | 2021-01-26 | 京东方科技集团股份有限公司 | 一种显示面板及其制作方法、工作方法和显示装置 |
-
2018
- 2018-07-19 CN CN201810795914.XA patent/CN108663864B/zh active Active
-
2019
- 2019-07-18 US US16/631,331 patent/US11092866B2/en active Active
- 2019-07-18 WO PCT/CN2019/096537 patent/WO2020015701A1/zh active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104238204A (zh) * | 2013-06-07 | 2014-12-24 | 业鑫科技顾问股份有限公司 | 像素电极的制造方法 |
CN105093764A (zh) * | 2015-08-07 | 2015-11-25 | 武汉华星光电技术有限公司 | 半透反式蓝相液晶显示器及其液晶显示模组 |
KR20170078243A (ko) * | 2015-12-29 | 2017-07-07 | 엘지디스플레이 주식회사 | 어레이 기판 및 이를 구비하는 표시장치 |
CN105867697A (zh) * | 2016-06-16 | 2016-08-17 | 厦门天马微电子有限公司 | 显示面板、显示装置及显示面板的制作方法 |
CN108008560A (zh) * | 2016-10-27 | 2018-05-08 | 乐金显示有限公司 | 液晶显示装置及其制造方法 |
CN106773205A (zh) * | 2016-12-26 | 2017-05-31 | 京东方科技集团股份有限公司 | 显示面板及其制作方法以及显示装置 |
CN107065357A (zh) * | 2017-05-18 | 2017-08-18 | 深圳市华星光电技术有限公司 | 阵列基板及其制造方法、液晶显示面板 |
Also Published As
Publication number | Publication date |
---|---|
CN108663864A (zh) | 2018-10-16 |
US11092866B2 (en) | 2021-08-17 |
WO2020015701A1 (zh) | 2020-01-23 |
US20210063793A1 (en) | 2021-03-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10261358B2 (en) | Liquid crystal display panel and manufacturing method thereof | |
US9678400B2 (en) | Array substrate for liquid crystal display and manufacturing method thereof | |
WO2019095764A1 (zh) | 阵列基板、显示面板及显示装置 | |
US9606392B2 (en) | Display panel and liquid crystal display including the same | |
KR101127826B1 (ko) | 액정표시패널 및 그 제조방법 | |
US10466557B2 (en) | Array substrate, manufacturing method thereof, and display device | |
US20050253984A1 (en) | Liquid crystal display and method for manufacturing the same | |
US7417705B2 (en) | Liquid crystal display device and method for fabricating the same | |
KR100968339B1 (ko) | 액정 표시 장치 및 그 제조 방법 | |
US7706052B2 (en) | Display device and method of manufacturing the same | |
CN106098703B (zh) | 显示面板及其制造方法、显示器 | |
WO2018126676A1 (zh) | 像素结构及其制作方法、阵列基板和显示装置 | |
TWI446542B (zh) | 陣列基板及其製造方法,具有陣列基板之顯示面板,以及具有陣列基板之液晶顯示裝置 | |
US20150085216A1 (en) | Array substrate and fabrication method thereof, display panel and fabrication method thereof | |
US9647011B2 (en) | Thin film transistor array panel and manufacturing method thereof | |
TW200424646A (en) | Semi-transmissive display apparatus | |
US10067393B2 (en) | Thin film display panel and liquid crystal display device including the same | |
CN112578585A (zh) | 显示面板及其制备方法、显示装置 | |
US20150346529A1 (en) | Liquid crystal display and method of manufacturing the same | |
US11048128B2 (en) | Display panel and manufacturing method thereof, and display device | |
CN108663864B (zh) | 一种显示面板及其制作方法、工作方法和显示装置 | |
US10534229B2 (en) | Liquid crystal display device and method of manufacturing the same | |
US20180129108A1 (en) | Display apparatus | |
JP2012093743A (ja) | 液晶表示装置 | |
US20210074739A1 (en) | Electro-optical device, method for manufacturing electro-optical device, and electronic apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |