CN108658035A - MEMS air flow meter manufacturing method of chip with back cavity structure - Google Patents
MEMS air flow meter manufacturing method of chip with back cavity structure Download PDFInfo
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- CN108658035A CN108658035A CN201810401010.4A CN201810401010A CN108658035A CN 108658035 A CN108658035 A CN 108658035A CN 201810401010 A CN201810401010 A CN 201810401010A CN 108658035 A CN108658035 A CN 108658035A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
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Abstract
The present invention relates to a kind of MEMS air flow meter manufacturing method of chip with back cavity structure, step are：Silicon chip surface forms composite dielectric film；Metal thermo-sensitive resistance film figure is prepared with stripping method；In metal thermo-sensitive resistance film surface growth protecting layer；Carry out high annealing；Remove the protective layer on pad, the metal layer of exposed pad；Silicon chip back side photoetching simultaneously carries out dry etching, forms back cavity structure；Chip cutting sliver completes chip manufacture.The present invention introduces the step of deionized water is rinsed after photoetching, development and plasma gluing, can effectively remove the residual impurity in wafer surface after plasma clean, it is ensured that adhesiveness of the metal film on deielectric-coating prevents it from falling off；The present invention realizes back of the body chamber by back side dry etch process, and corrosive liquid can be effectively prevent in wet etching to the corrosiveness of front description structure.
Description
Technical field
The invention belongs to MEMS manufacturing fields, are related to a kind of MEMS air flow meter chip systems with back cavity structure
Make method, the manufacturing method of especially a kind of air flow meter chip for carrying on the back chamber with film.
Background technology
Vehicular air mass flow sensor is for the electronic device in Hyundai Motor electric-control system.Mounted on air filter
Clearly between device and air throttle, for measure sucking engine air amount number, be transmitted to ECU after being converted into electric signal, as certainly
The parameter for determining basic fuel injection amount, it is decision systems control essence to be air flow sensor as the sensor of air inlet amount is measured
One of important component of degree.
Hot Film Type Mass Air Flow Sensor belongs to calorimetric sensor, " the heat release of gas proposed according to Thomas
Amount or caloric receptivity it is directly proportional to the mass flow of the gas " theory, using high current to sensor sensing head heating, gas stream
A part of heat can be taken away when dynamic, probe temperature is made to change, by measure due to gas flows caused by temperature change or in order to
Maintain probe temperature it is constant caused by curent change reflect the mass flow of gas, also known as " Thomas's flow sensor ".
The flow chip of gas mass flow detection is realized using Thomas's principle, includes mainly adding thermal resistance and thermometric electricity
Resistance and its substrat structure.Chip substrate selects conventional silicon semiconductor material, is formed on its surface metallic film thermistor
Make adding thermal resistance and temperature detecting resistance.In view of silicon thermal conductivity coefficient is larger, the back side of thermistor on silicon is needed to process to form sky
Thermistor is finally produced on one layer vacantly on the insulating film on silicon cavity by cavity configuration by MEMS technology.
Combination micro fabrication of the air quality air mass flow sensitive chip based on silicon base makes, in actual processing process
In, due to technological parameter complexity, there are thermal stress excessive, metallic film poor adhesion, free standing structure film be easily broken, thermistor
The problems such as resistance value is unstable has seriously affected the performance and yield rate of chip.
Invention content
Present invention solves the technical problem that being：It overcomes the shortage of prior art, it is empty to provide a kind of MEMS with back cavity structure
Gas mass flowmenter manufacturing method of chip can be effectively ensured the adhesiveness of film during chip manufacture, solve free standing structure film
The technical issues of rupture, while can ensure that chip performance is stablized.
Technical solution of the invention is：
A kind of MEMS air flow meter manufacturing method of chip with back cavity structure is provided, is included the following steps：1)
Silicon chip surface forms composite dielectric film；2) metal thermo-sensitive resistance film figure is prepared with stripping method；3) thin in metal thermo-sensitive resistance
Film surface growth protecting layer；4) high annealing is carried out；5) protective layer on pad, the metal layer of exposed pad are removed；6) silicon chip
Back side photoetching simultaneously carries out dry etching, forms back cavity structure；7) chip cutting sliver completes chip manufacture.
Preferably, the dielectric film prepared in step 1) is the composite membrane of silica and silicon nitride, i.e., first silicon chip just
Anti- two sides grows silicon dioxide film, then again in silicon chip tow sides grown silicon nitride film.
Preferably, the thickness of silicon nitride film and the thickness of silicon dioxide film are identical, are 1um-3um.
Preferably, the stripping method in step 2) prepares the process of metal thermo-sensitive resistance film figure and includes the following steps：
2.1) it is formed on silicon chip by gluing, exposure, development step opposite with the metal thermo-sensitive resistance film figure desirably formed
Photoetching offset plate figure；2.2) silicon chip is put into plasma cleaner and is surface-treated with oxygen plasma；2.3) silicon chip extracting
It is handled afterwards with deionized water and dries up or dry；2.4) that silicon chip is put into evaporation metal thermistor in electron beam evaporation equipment is thin
Film；2.5) silicon chip is put into glue and is removed, obtain required metal thermo-sensitive resistance film figure.
Preferably, the exposure described in step 2.1) uses vacuum contact mode.
Preferably, the processing mode of the deionized water described in step 2.3) includes impregnating, rinsing or sprayed with developing machine,
Processing time was at 10 seconds or more.
Preferably, evaporation metal thermistor thin film is Ti/Pt or Cr/Ni films in step 2.4), during being deposited not
Silicon chip is heated.
Preferably, the high annealing described in step 4) carries out in the atmosphere of logical nitrogen, and the temperature range of annealing is
200 DEG C -400 DEG C, annealing time 2h-6h.
Preferably, it the photoetching of step 6) silicon chip back side and carries out dry etch step and includes：6.1) silicon chip back side photoetching is formed
Carry on the back the photoetching offset plate figure of chamber window；6.2) composite dielectric film dry etching；6.3) deep silicon etching.
Preferably, the photoresist thickness wherein formed in photoetching is more than 1.5 times of complex media film thickness, and ensures in step
It is rapid 6.2) and 6.3) in be completely consumed.
Invention has the beneficial effect that compared with prior art：
(1) present invention uses the composite membrane of SiO2 and silicon nitride, as free standing structure film, since silica and silicon nitride are thin
The stress of film can cancel out each other, thus may insure thicker hanging dielectric film, it is ensured that free standing structure film is during the work time
Will not stress it is excessive and rupture；
(2) present invention forms metal thermo-sensitive resistance film figure using stripping technology, since stripping technology has well
Final line thickness control ability, can ensure that the precision of resistance value on chip, even more important, in photoetching, development and plasma
The step of deionized water is rinsed is introduced after body gluing, the remnants that can be effectively removed after plasma clean in wafer surface are miscellaneous
Matter, it is ensured that adhesiveness of the metal film on deielectric-coating prevents it from falling off；
(3) present invention in photoetching by the way of vacuum contact so that the technique can use common positive photoresist
Steep photoresist step structure can be realized, ensure peeling effect；
(4) present invention can effectively change metallic film internal grain by being made annealing treatment under the atmosphere of nitrogen
Structure, it is ensured that its resistance characteristic is stablized, so that it is guaranteed that the stabilization of chip performance.
(5) present invention realizes back of the body chamber, can effectively prevent corrosive liquid pair in wet etching by back side dry etch process
The corrosiveness of front description structure, meanwhile, by the thickness for controlling photoresist, it is ensured that it can be full during dry etching
Portion consumes, thus it is etched after chip need not carry out subsequent cleaning, thus can also reduce to metallic film
The influence of resistance, it is ensured that the performance of chip.
Description of the drawings
Fig. 1 is the chip structure diagrammatic cross-section that manufacturing method of chip of the present invention is formed.
Fig. 2 is the manufacturing method flow chart of chips of the present invention.
Specific implementation mode
The present invention will be further described below in conjunction with the accompanying drawings.
A kind of this silicon-based air mass flowmenter manufacturing method of chip with back cavity structure, mainly includes the following steps：
1) silicon chip surface forms composite dielectric film；2) metal thermo-sensitive resistance film figure is prepared with stripping method；3) in metal thermo-sensitive resistance
Film surface growth protecting layer；4) high annealing is carried out；5) by photoetching corrosion, the protective layer on pad is removed, exposes metal
Layer；6) back side photoetching and dry etching is carried out, forms back cavity structure；7) chip cutting sliver completes chip manufacture.Form chip
Structural schematic diagram it is as shown in Figure 1.
The silicon chip of the processing selection thickness 200um-400um of silicon-based air mass flowmenter chip, the crystal orientation and base of silicon chip
Quasi- side can be tangentially arbitrary tangential.Silicon chip first with thermal oxide growth layer of silicon dioxide (see Fig. 2 a), then its positive and negative two
The method that face plasma increases chemical vapor deposition PECVD or low-pressure chemical vapor deposition LPCVD grows one layer of silicon nitride,
Its thickness is identical as silicon dioxide thickness (Fig. 2 b), and the thickness of silica is 1um-3um.
Metal thermo-sensitive resistance film figure is grown followed by stripping technology, including the thin-film electro that line width is micron dimension
Hinder grid structure and film pad structure.One layer of positive photoresist of spin coating first on silicon chip, the thickness control of photoresist is in gold
Belong to 5 times or more of film thickness, usual thickness is in 1.5um or more；Photoresist is aligned with lay photoetching mask plate after front baking and carries out purple
Outer exposure both needs in exposure process to vacuumize chip and mask to ensure to combine closely；After development, silicon chip is put
Enter and cleaned in oxygen plasma cleaning machine, time of cleaning it is ensured that photoresist is removed 50nm or more, typical oxygen etc. from
The parameter of daughter is frequency 2.45GHz, discharge power 300W-600W, oxygen flow 100sccm-500sccm, and processing time exists
10s-30s；Chip also needs to be rinsed with deionized water after taking out after oxygen plasma cleaning, is then dried.After drying
Chip be put into electron beam evaporation equipment and carry out vacuum coating, the film of plating is Ti/Pt or Cr/Ni films, wherein Ti or Cr
For adhesion layer, thickness 20nm-40nm；Pt or Ni layers of effective thermistor sensitive layer, thickness 150nm-350nm；It is specific thick
Degree is related with the designed resistance value of graphic structure and design.The chip of growth metallic film is put into acetone or special removes glue
In, it is removed, realizes required graphic structure (Fig. 2 c).
To realize the effective protection of metal electrode, prevents impurity pollution from causing short circuit, form the silicon chip of metal thin-film pattern
It is put into one layer of silicon nitride (Fig. 2 d) of growth in PECVD；Then silicon chip is made annealing treatment, and in annealing process, needs to be passed through nitrogen
It is protected；The temperature of annealing is 200 DEG C~400 DEG C, annealing time 3h-5h.
To realize effective electrical connection of metal electrode, needs to carry out photoetching corrosion to above-mentioned silicon chip, erode on pad
Deielectric-coating (Fig. 2 e), in order to the interconnection of chip and other circuits.Then photoetching is carried out at the back side of silicon chip, then carries out medium
Film dry etching, local etching fall silicon nitride and silica, and the thickness of photoresist should be greater than the overall thickness of silicon nitride and silica
1.5 times, etch away silicon nitride and silica (Fig. 2 f), be then directly placed into deep silicon etching machine and carry out deep silicon etching, formed
Chamber is carried on the back, structure as shown in Figure 2 g is ultimately formed.After remaining photoresist consumes in etching, the dielectric layer of exposing will continue to
Mask as etching silicon.During etching silicon, need to completely consume photoresist to the greatest extent.Because without subsequent removal light
The step of photoresist, therefore can also avoid subsequently cleaning the adverse effect of squadron's free standing structure film, it is ensured that the yield rate of chip.
Required flowmeter chip can be realized by sliver in subsequent wafer.
The above, best specific implementation mode only of the invention, but scope of protection of the present invention is not limited thereto,
Any one skilled in the art in the technical scope disclosed by the present invention, the change or replacement that can be readily occurred in,
It should be covered by the protection scope of the present invention.
The content that description in the present invention is not described in detail belongs to the known technology of professional and technical personnel in the field.
Claims (10)
1. a kind of MEMS air flow meter manufacturing method of chip with back cavity structure, which is characterized in that including walking as follows
Suddenly：1) silicon chip surface forms composite dielectric film；2) metal thermo-sensitive resistance film figure is prepared with stripping method；3) in metal thermo-sensitive electricity
Hinder film surface growth protecting layer；4) high annealing is carried out；5) protective layer on pad, the metal layer of exposed pad are removed；6)
Silicon chip back side photoetching simultaneously carries out dry etching, forms back cavity structure；7) chip cutting sliver completes chip manufacture.
2. carrying the MEMS air flow meter manufacturing method of chip of back cavity structure as described in claim 1, feature exists
In the dielectric film prepared in step 1) is the composite membrane of silica and silicon nitride, i.e., first grows two in silicon chip tow sides
Silicon oxide film, then again in silicon chip tow sides grown silicon nitride film.
3. carrying the MEMS air flow meter manufacturing method of chip of back cavity structure as claimed in claim 2, feature exists
In the thickness of silicon nitride film is identical as the thickness of silicon dioxide film, is 1um-3um.
4. carrying the MEMS air flow meter manufacturing method of chip of back cavity structure, feature as claimed in claim 1 or 2
It is, the process that the stripping method in step 2) prepares metal thermo-sensitive resistance film figure includes the following steps：2.1) by gluing,
Exposure, development step form the photoetching offset plate figure opposite with the metal thermo-sensitive resistance film figure desirably formed on silicon chip；
2.2) silicon chip is put into plasma cleaner and is surface-treated with oxygen plasma；2.3) deionized water is used after silicon chip extracting
It handles and dries up or dry；2.4) silicon chip is put into evaporation metal thermistor thin film in electron beam evaporation equipment；2.5) by silicon
Piece is put into glue and is removed, and obtains required metal thermo-sensitive resistance film figure.
5. carrying the MEMS air flow meter manufacturing method of chip of back cavity structure as claimed in claim 4, feature exists
In the exposure described in step 2.1) uses vacuum contact mode.
6. carrying the MEMS air flow meter manufacturing method of chip of back cavity structure as claimed in claim 4, feature exists
In the processing mode of the deionized water described in step 2.3) includes impregnating, rinsing or sprayed with developing machine, and processing time is 10
Second or more.
7. carrying the MEMS air flow meter manufacturing method of chip of back cavity structure as claimed in claim 4, feature exists
In evaporation metal thermistor thin film is Ti/Pt or Cr/Ni films in step 2.4), is not heated to silicon chip row during vapor deposition.
8. carrying the MEMS air flow meter manufacturing method of chip of back cavity structure, feature as claimed in claim 1 or 2
It is, the high annealing described in step 4), is carried out in the atmosphere of logical nitrogen, the temperature range of annealing is 200 DEG C -400 DEG C,
Annealing time is 2h-6h.
9. carrying the MEMS air flow meter manufacturing method of chip of back cavity structure, feature as claimed in claim 1 or 2
It is, the photoetching of step 6) silicon chip back side simultaneously carries out dry etch step and includes：6.1) silicon chip back side photoetching forms back cavity structure
Photoetching offset plate figure；6.2) composite dielectric film dry etching；6.3) deep silicon etching is carried out, back cavity structure is formed.
10. carrying the MEMS air flow meter manufacturing method of chip of back cavity structure as claimed in claim 9, feature exists
It is more than 1.5 times of complex media film thickness in, the photoresist thickness wherein formed in photoetching, and ensures in step 6.2) and 6.3)
In be completely consumed.
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| CN201810401010.4A CN108658035A (en) | 2018-04-28 | 2018-04-28 | MEMS air flow meter manufacturing method of chip with back cavity structure |
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| CN201810401010.4A CN108658035A (en) | 2018-04-28 | 2018-04-28 | MEMS air flow meter manufacturing method of chip with back cavity structure |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109928357A (en) * | 2019-02-27 | 2019-06-25 | 上海华虹宏力半导体制造有限公司 | A kind of MEMS bridge structure and forming method thereof |
| CN111620300A (en) * | 2020-06-04 | 2020-09-04 | 中芯集成电路制造(绍兴)有限公司 | Device with back cavity structure and forming method thereof |
| CN112960642A (en) * | 2021-02-04 | 2021-06-15 | 厦门海恩迈科技有限公司 | Preparation method of metal wire structure for high-temperature heating |
| CN113157008A (en) * | 2021-04-01 | 2021-07-23 | 青岛芯笙微纳电子科技有限公司 | MEMS mass flow controller and control method |
| CN115857287A (en) * | 2023-02-20 | 2023-03-28 | 中北大学 | Preparation method of graphene microstructure |
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| CN115857287A (en) * | 2023-02-20 | 2023-03-28 | 中北大学 | Preparation method of graphene microstructure |
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