CN108646490A - COA type array substrates and preparation method thereof - Google Patents
COA type array substrates and preparation method thereof Download PDFInfo
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- CN108646490A CN108646490A CN201810595334.6A CN201810595334A CN108646490A CN 108646490 A CN108646490 A CN 108646490A CN 201810595334 A CN201810595334 A CN 201810595334A CN 108646490 A CN108646490 A CN 108646490A
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- flatness layer
- layer
- color
- color blocking
- lug boss
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
Abstract
A kind of COA types array substrate of present invention offer and preparation method thereof.The production method of the COA type array substrates, by forming flatness layer on multiple third color blocking units for being recessed to bottom surface in top surface；The top edge that the flatness layer corresponds to each third color blocking unit is equipped with a circle lug boss, the corresponding flatness layer film thickness in region for making third color blocking unit film thickness thicker is equally thicker, reduce the penetrance in the thicker region of third color blocking unit film thickness, the region for making third color blocking unit film thickness thicker is consistent with the penetrance in other regions, to balance coloration, reach evenness, improves the color representation of COA type array substrates.
Description
Technical field
The present invention relates to display technology fields more particularly to a kind of COA types array substrate and preparation method thereof.
Background technology
Thin film transistor (TFT) (Thin Film Transistor, TFT) is current liquid crystal display device (Liquid Crystal
Display, LCD) and active matrix drive type organic electroluminescence display device and method of manufacturing same (Active Matrix Organic Light-
Emitting Diode, AMOLED) in main driving element, the display performance of direct relation panel display apparatus.
Liquid crystal display on existing market is largely backlight liquid crystal display comprising liquid crystal display panel and the back of the body
Optical mode group (backlight module).The operation principle of liquid crystal display panel is in thin film transistor base plate (Thin Film
Transistor Array Substrate, TFT Array Substrate) and colored filter (Color Filter, CF)
Pour into liquid crystal molecule between substrate, and apply pixel voltage and common voltage respectively on two plate bases, by pixel voltage and
The light refraction of backlight module is out generated picture by the direction of rotation of the electric field controls liquid crystal molecule formed between common voltage
Face.Colored filter includes multiple color blocking units corresponding with multiple sub-pixels, and it is (green to provide R (red), G for multiple sub-pixels
Color) and B (blue) color, it is general at present to carry out making color blocking unit using photoresist, since photoresist differs with levelability
Cause problem, causing the shape of color blocking unit in actual fabrication to present, spill is bowl-shape (bowl shape), and the amplitude being recessed is more than
0.5um causes sub-pixel center and marginal position coloration difference excessive, product color is caused to be performed poor.
COA (Color-filter On Array) technology is a kind of one be produced on colored filter in array substrate
Kind of integrated technology, can effective solution liquid crystal display device in box technique caused by contraposition deviation leakage problem, and energy
Enough it is obviously improved display aperture opening ratio.But because the array substrate topographic structure of colorized optical filtering under piece is complicated, more exacerbate colour
The spill bowl shape problem of resistance of color filter unit.
Invention content
The purpose of the present invention is to provide a kind of production method of COA types array substrate, make third color blocking unit film thickness compared with
Thick region is consistent with the penetrance in other regions, to balance coloration, reaches evenness, improves COA type array substrates
Color representation.
The present invention also aims to provide a kind of COA types array substrate, the region that keeps third color blocking unit film thickness thicker
It is consistent with the penetrance in other regions, to balance coloration, reach evenness, improves the color representation of COA type array substrates.
To achieve the above object, the present invention provides a kind of production method of COA types array substrate, include the following steps：
Step S1, underlay substrate is provided, TFT layer is formed on the underlay substrate；Colourama is formed on the TFT layer
Resistance layer；The color light resistance layer includes multiple the first adjacent color blocking units, the second color blocking unit and third color blocking unit, described
The top surface of multiple third color blocking units is recessed to bottom surface；
Step S2, flatness layer is formed in the color light resistance layer；The flatness layer corresponds to each third color blocking unit
Top edge is equipped with a circle lug boss.
The ratio of the width of the lug boss and the width of third color blocking unit is 0.2-0.25；The protrusion of the flatness layer
The thickness in portion is higher 0.3um-0.5um than the thickness of the other positions of flatness layer.
Single exposure is carried out to flatness layer by a half-tone mask plate and lug boss is made in development.
The flatness layer is negative photo glue material, and the lug boss that the half-tone mask plate corresponds to flatness layer is full impregnated light
Other regions in region, corresponding flatness layer are semi-transparent region.
The flatness layer is positive-tone photo glue material, and the lug boss that the half-tone mask plate corresponds to flatness layer is opaque
Other regions in region, corresponding flatness layer are semi-transparent region.
The present invention also provides a kind of COA types array substrates, including：Underlay substrate, the TFT on the underlay substrate
Layer, the color light resistance layer on the TFT layer and the flatness layer in the color light resistance layer；
The color light resistance layer includes multiple the first adjacent color blocking units, the second color blocking unit and third color blocking unit,
The top surface of the multiple third color blocking unit is recessed to bottom surface；The flatness layer corresponds to the top edge of each third color blocking unit
Equipped with a circle lug boss.
The ratio of the width of the lug boss and the width of third color blocking unit is 0.2-0.25；The protrusion of the flatness layer
The thickness in portion is higher 0.3um-0.5um than the thickness of the other positions of flatness layer.
Single exposure is carried out to flatness layer by a half-tone mask plate and lug boss is made in development.
The flatness layer is negative photo glue material, and the lug boss that the half-tone mask plate corresponds to flatness layer is full impregnated light
Other regions in region, corresponding flatness layer are semi-transparent region.
The flatness layer is positive-tone photo glue material, and the lug boss that the half-tone mask plate corresponds to flatness layer is opaque
Other regions in region, corresponding flatness layer are semi-transparent region.
Beneficial effects of the present invention：The production method of the COA type array substrates of the present invention, by being recessed to bottom surface in top surface
Multiple third color blocking units on form flatness layer；The top edge that the flatness layer corresponds to each third color blocking unit is equipped with a circle
Lug boss so that the corresponding flatness layer film thickness in the thicker region of third color blocking unit film thickness is equally thicker, reduces third color blocking list
The penetrance in the thicker region of first film thickness so that the penetrance one in third color blocking unit film thickness thicker region and other regions
It causes, to balance coloration, reaches evenness, improve the color representation of COA type array substrates.The COA type array bases of the present invention
Plate forms flatness layer on the multiple third color blocking units being recessed to bottom surface in top surface；The flatness layer corresponds to each third color blocking list
The top edge of member is equipped with a circle lug boss so that the corresponding flatness layer film thickness in the thicker region of third color blocking unit film thickness is same
It is thicker, reduce the penetrance in third color blocking unit film thickness thicker region so that the thicker region of third color blocking unit film thickness with
The penetrance in other regions is consistent, to balance coloration, reaches evenness, improves the color representation of COA type array substrates.
Description of the drawings
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with the detailed of the present invention
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
In attached drawing,
Fig. 1 is the flow chart of the production method of the COA type array substrates of the present invention；
Fig. 2 is the schematic diagram of the step S1 of the production method of the COA type array substrates of the present invention；
Fig. 3 is the schematic diagram of the step S2 of the production method of the COA type array substrates of the present invention；
Fig. 4 is the signal of one preferred embodiment of half-tone mask plate of the production method of the COA type array substrates of the present invention
Figure；
Fig. 5 is showing for another preferred embodiment of half-tone mask plate of the production method of the COA type array substrates of the present invention
It is intended to；
The COA type battle arrays of schematic diagram and the present invention that Fig. 6 is the step S3 of the production method of the COA type array substrates of the present invention
The schematic diagram of row substrate.
Specific implementation mode
Further to illustrate the technological means and its effect of the invention taken, below in conjunction with the preferred implementation of the present invention
Example and its attached drawing are described in detail.
Referring to Fig. 1, the production method of the COA type array substrates of the present invention, includes the following steps：
Step S1, referring to Fig. 2, providing underlay substrate 10, TFT layer 20 is formed on the underlay substrate 10；Described
Color light resistance layer 30 is formed on TFT layer 20；The color light resistance layer 30 includes multiple the first adjacent color blocking units 31, the second color
Unit 32 and third color blocking unit 33 are hindered, the top surface of the multiple third color blocking unit 33 is recessed to bottom surface；
Step S2, referring to Fig. 3, forming flatness layer 40 in the color light resistance layer 30；The flatness layer 40 corresponds to often
The top edge of a third color blocking unit 33 is equipped with a circle lug boss 41.
It should be noted that due to the problem that the Other substrate materials in color light resistance layer 30 have levelability inconsistent, i.e.,
When making color light resistance layer 30, the top surfaces of multiple third color blocking units 33 in actual fabrication is caused to be recessed to bottom surface, i.e., the
Three color blocking units, 33 shape presentation spill is bowl-shape, and the present invention is corresponded to often by the flatness layer 40 on being formed in color light resistance layer 30
The top edge of a third color blocking unit 33 is equipped with a circle lug boss 41 so that the thicker region pair of third color blocking 33 film thickness of unit
40 film thickness of flatness layer answered is equally thicker, reduces the penetrance in the thicker region of third color blocking 33 film thickness of unit so that third color
It is consistent with the penetrance in other regions to hinder the thicker region of 33 film thickness of unit, to balance coloration, reaches evenness, improves
The color representation of COA type array substrates.
Specifically, in the step S1, chromatic photoresist is formed on the TFT layer 20 by yellow light processing procedure or inkjet printing
Layer 30.
Specifically, the color light resistance layer 30 can be negative photoresist material, or positive-tone photo glue material.
Specifically, the first color blocking unit 31 is that red photoresist, green photoresist and blue light resistance are one such, described
Second color blocking unit 32 is the another kind that red photoresist, green photoresist and blue light resistance are wherein different from the first color blocking unit 31,
The third color blocking unit 33 is that red photoresist, green photoresist and blue light resistance are wherein different from the first color blocking unit 31 and second
The another kind of color blocking unit 32.
Preferably, the end face center region of the multiple third color blocking unit 33 is recessed to bottom surface.
Specifically, the ratio of the width of the lug boss 41 and the width of third color blocking unit 33 is 0.2-0.25.
Specifically, the thickness of the lug boss 41 of the flatness layer 40 is higher 0.3um- than the thickness of the other positions of flatness layer 40
0.5um。
Specifically, single exposure is carried out to flatness layer 40 by a half-tone mask plate 60 and lug boss 41 is made in development.
Optionally, referring to Fig. 4, the flatness layer 40 is negative photo glue material, the half-tone mask plate 60 corresponds to
The lug boss 41 of flatness layer 40 is full transmission region 61, other regions of corresponding flatness layer 40 are semi-transparent region 62.
Optionally, referring to Fig. 5, the flatness layer 40 is positive-tone photo glue material, the half-tone mask plate 60 corresponds to
The lug boss 41 of flatness layer 40 is light tight region 63, other regions of corresponding flatness layer 40 are semi-transparent region 62.
Specifically, referring to Fig. 6, the production method of the COA types array substrate further includes step S3, in the flatness layer
Pixel electrode layer 50 is formed on 40.
Further, patterned pixel electricity is formed on flatness layer 40 by film forming, yellow light processing procedure and etch process
Pole layer 50.
Referring to Fig. 6, the production method based on above-mentioned COA types array substrate, the present invention also provides a kind of COA types array bases
Plate, including：Underlay substrate 10, the TFT layer 20 on the underlay substrate 10, the chromatic photoresist on the TFT layer 20
Layer 30 and the flatness layer 40 in the color light resistance layer 30；
The color light resistance layer 30 includes multiple the first adjacent color blocking units 31, the second color blocking unit 32 and third color blocking
The top surface of unit 33, the multiple third color blocking unit 33 is recessed to bottom surface；The flatness layer 40 corresponds to each third color blocking list
The top edge of member 33 is equipped with a circle lug boss 41.
It should be noted that due to the problem that the Other substrate materials in color light resistance layer 30 have levelability inconsistent, i.e.,
When making color light resistance layer 30, the top surfaces of multiple third color blocking units 33 in actual fabrication is caused to be recessed to bottom surface, i.e., the
Three color blocking units, 33 shape presentation spill is bowl-shape, and the present invention is corresponded to often by the flatness layer 40 on being formed in color light resistance layer 30
The top edge of a third color blocking unit 33 is equipped with a circle lug boss 41 so that the thicker region pair of third color blocking 33 film thickness of unit
40 film thickness of flatness layer answered is equally thicker, reduces the penetrance in the thicker region of third color blocking 33 film thickness of unit so that third color
It is consistent with the penetrance in other regions to hinder the thicker region of 33 film thickness of unit, to balance coloration, reaches evenness, improves
The color representation of COA type array substrates.
Specifically, color light resistance layer 30 is formed on the TFT layer 20 by yellow light processing procedure or inkjet printing.
Specifically, the color light resistance layer 30 can be negative photoresist material, or positive-tone photo glue material.
Specifically, the first color blocking unit 31 is that red photoresist, green photoresist and blue light resistance are one such, described
Second color blocking unit 32 is the another kind that red photoresist, green photoresist and blue light resistance are wherein different from the first color blocking unit 31,
The third color blocking unit 33 is that red photoresist, green photoresist and blue light resistance are wherein different from the first color blocking unit 31 and second
The another kind of color blocking unit 32.
Preferably, the end face center region of the multiple third color blocking unit 33 is recessed to bottom surface.
Specifically, the ratio of the width of the lug boss 41 and the width of third color blocking unit 33 is 0.2-0.25.
Specifically, the thickness of the lug boss 41 of the flatness layer 40 is higher 0.3um- than the thickness of the other positions of flatness layer 40
0.5um。
Specifically, single exposure is carried out to flatness layer 40 by a half-tone mask plate 60 and lug boss 41 is made in development.
Optionally, referring to Fig. 4, the flatness layer 40 is negative photo glue material, the half-tone mask plate 60 corresponds to
The lug boss 41 of flatness layer 40 is full transmission region 61, other regions of corresponding flatness layer 40 are semi-transparent region 62.
Optionally, referring to Fig. 5, the flatness layer 40 is positive-tone photo glue material, the half-tone mask plate 60 corresponds to
The lug boss 41 of flatness layer 40 is light tight region 63, other regions of corresponding flatness layer 40 are semi-transparent region 62.
Specifically, referring to Fig. 6, the COA types array substrate further includes the pixel electrode being set on the flatness layer 40
Layer 50.
Further, patterned pixel electricity is formed on flatness layer 40 by film forming, yellow light processing procedure and etch process
Pole layer 50.
Certainly, the design of color light resistance layer 30 and flatness layer 40 of the invention is not limited to COA type array substrates, equally
It is also applied on colored filter substrate, the present invention does not illustrate herein.
In conclusion the production method of the COA type array substrates of the present invention, by be recessed to bottom surface in top surface multiple the
Flatness layer is formed on three color blocking units；The top edge that the flatness layer corresponds to each third color blocking unit is equipped with a circle lug boss,
So that third color blocking unit film thickness it is thicker the corresponding flatness layer film thickness in region it is equally thicker, reduce third color blocking unit film thickness compared with
The penetrance in thick region so that the thicker region of third color blocking unit film thickness is consistent with the penetrance in other regions, with balance
Coloration reaches evenness, improves the color representation of COA type array substrates.The COA type array substrates of the present invention, in top surface
Flatness layer is formed on the multiple third color blocking units being recessed to bottom surface；The flatness layer corresponds to the top surface side of each third color blocking unit
Edge is equipped with a circle lug boss so that the corresponding flatness layer film thickness in the thicker region of third color blocking unit film thickness is equally thicker, reduces
The penetrance in the thicker region of third color blocking unit film thickness so that the thicker region of third color blocking unit film thickness and other regions
Penetrance is consistent, to balance coloration, reaches evenness, improves the color representation of COA type array substrates.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding change and deformations are made in design, and all these change and distortions should all belong to the claims in the present invention
Protection domain.
Claims (10)
1. a kind of production method of COA types array substrate, which is characterized in that include the following steps：
Underlay substrate (10) step S1, is provided, forms TFT layer (20) on the underlay substrate (10)；In the TFT layer (20)
Upper formation color light resistance layer (30)；The color light resistance layer (30) includes multiple the first adjacent color blocking units (31), the second color
Unit (32) and third color blocking unit (33) are hindered, the top surface of the multiple third color blocking unit (33) is recessed to bottom surface；
Step S2, flatness layer (40) is formed in the color light resistance layer (30)；The corresponding each third color of the flatness layer (40)
The top edge for hindering unit (33) is equipped with a circle lug boss (41).
2. the production method of COA types array substrate as described in claim 1, which is characterized in that the width of the lug boss (41)
The ratio of degree and the width of third color blocking unit (33) is 0.2-0.25；The thickness ratio of the lug boss (41) of the flatness layer (40)
The high 0.3um-0.5um of thickness of the other positions of flatness layer (40).
3. the production method of COA types array substrate as described in claim 1, which is characterized in that pass through a half-tone mask plate
(60) single exposure is carried out to flatness layer (40) and lug boss (41) is made in development.
4. the production method of COA types array substrate as claimed in claim 3, which is characterized in that the flatness layer (40) is negative
Property Other substrate materials, the lug boss (41) of the corresponding flatness layer (40) of the half-tone mask plate (60) is full transmission region (61),
Other regions of corresponding flatness layer (40) are semi-transparent region (62).
5. the production method of COA types array substrate as claimed in claim 3, which is characterized in that the flatness layer (40) is just
Property Other substrate materials, the lug boss (41) of the corresponding flatness layer (40) of the half-tone mask plate (60) is light tight region (63),
Other regions of corresponding flatness layer (40) are semi-transparent region (62).
6. a kind of COA types array substrate, which is characterized in that including：Underlay substrate (10) is set on the underlay substrate (10)
TFT layer (20), the color light resistance layer (30) being set on the TFT layer (20) and putting down in the color light resistance layer (30)
Smooth layer (40)；
The color light resistance layer (30) includes multiple the first adjacent color blocking units (31), the second color blocking unit (32) and third color
Unit (33) is hindered, the top surface of the multiple third color blocking unit (33) is recessed to bottom surface；The flatness layer (40) corresponding each the
The top edge of three color blocking units (33) is equipped with a circle lug boss (41).
7. COA types array substrate as claimed in claim 6, which is characterized in that the width of the lug boss (41) and third color
The ratio for hindering the width of unit (33) is 0.2-0.25；The thickness of the lug boss (41) of the flatness layer (40) is than flatness layer (40)
Other positions the high 0.3um-0.5um of thickness.
8. COA types array substrate as claimed in claim 6, which is characterized in that by a half-tone mask plate (60) to flat
Layer (40) carries out single exposure and lug boss (41) is made in development.
9. COA types array substrate as claimed in claim 8, which is characterized in that the flatness layer (40) is negative photo glue material
The lug boss (41) of material, the corresponding flatness layer (40) of the half-tone mask plate (60) is full transmission region (61), corresponding flatness layer
(40) other regions are semi-transparent region (62).
10. COA types array substrate as claimed in claim 8, which is characterized in that the flatness layer (40) is positive-tone photo glue material
The lug boss (41) of material, the corresponding flatness layer (40) of the half-tone mask plate (60) is light tight region (63), corresponding flatness layer
(40) other regions are semi-transparent region (62).
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| CN201810595334.6A CN108646490B (en) | 2018-06-11 | 2018-06-11 | COA type array substrate and manufacturing method thereof |
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| CN201810595334.6A CN108646490B (en) | 2018-06-11 | 2018-06-11 | COA type array substrate and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109143700A (en) * | 2018-08-20 | 2019-01-04 | 武汉华星光电半导体显示技术有限公司 | Tft array substrate and preparation method thereof |
| WO2021097992A1 (en) * | 2019-11-18 | 2021-05-27 | Tcl华星光电技术有限公司 | Substrate, liquid crystal display panel, and preparation method for substrate |
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| WO2021097992A1 (en) * | 2019-11-18 | 2021-05-27 | Tcl华星光电技术有限公司 | Substrate, liquid crystal display panel, and preparation method for substrate |
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| CN108646490B (en) | 2021-01-26 |
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