CN108638616A - Layered dielectric material and preparation method thereof - Google Patents

Layered dielectric material and preparation method thereof Download PDF

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Publication number
CN108638616A
CN108638616A CN201810440998.5A CN201810440998A CN108638616A CN 108638616 A CN108638616 A CN 108638616A CN 201810440998 A CN201810440998 A CN 201810440998A CN 108638616 A CN108638616 A CN 108638616A
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layer
cloth
fiber non
woven layer
woven
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CN108638616B (en
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沈洋
江建勇
南策文
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Shenzhen Research Institute Tsinghua University
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Shenzhen Research Institute Tsinghua University
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/22Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed
    • B32B5/24Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer
    • B32B5/26Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer another layer next to it also being fibrous or filamentary
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/06Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/10Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G13/00Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • H01G4/14Organic dielectrics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • H01G4/14Organic dielectrics
    • H01G4/16Organic dielectrics of fibrous material, e.g. paper
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00Layers arrangement
    • B32B2250/40Symmetrical or sandwich layers, e.g. ABA, ABCBA, ABCCBA
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00Layers arrangement
    • B32B2250/42Alternating layers, e.g. ABAB(C), AABBAABB(C)
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2262/00Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
    • B32B2262/02Synthetic macromolecular fibres
    • B32B2262/0223Vinyl resin fibres
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/16Capacitors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Laminated Bodies (AREA)
  • Nonwoven Fabrics (AREA)

Abstract

The present invention relates to a kind of layered dielectric materials and preparation method thereof, including the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth being stacked, first fiber non-woven layer of cloth is vinylidene hexafluoropropylene copolymer layer, second fiber non-woven layer of cloth is vinylidene trifluoro-ethylene chlorine fluoride copolymers layer, and total number of plies of the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth is 2~30 layers.Above-mentioned layered dielectric material and preparation method thereof, vinylidene hexafluoropropylene copolymer layer has high breakdown performance, and vinylidene trifluoro-ethylene chlorine fluoride copolymers Cen has high polarization performance and high energy storage efficiency, and by being layered on top of each other vinylidene hexafluoropropylene copolymer layer and vinylidene trifluoro-ethylene chlorine fluoride copolymers layer to control the inside mesoscopic structure of stratiform dielectric material, be conducive to inhibit conductance loss and the f-e loss inside stratiform dielectric material, so that layered dielectric material has both high energy storage density and energy storage efficiency simultaneously.

Description

Layered dielectric material and preparation method thereof
Technical field
The present invention relates to dielectric material preparing technical fields, more particularly to layered dielectric material and preparation method thereof.
Background technology
With the development of modern science and technology, existing as important base electronic element and high-power energy storage device, capacitor It is obtained in consumer electronics product, communication products, automation control, high-speed railway, new-energy automobile and aviation and military equipment It is widely applied.Wherein, thin film capacitor obtains scientific research personnel and market because of its high withstand voltage intensity, the advantages such as high power density More concerns.However, the dielectric constant of commercialization thin dielectric film BOPP (Biaxially oriented polypropylene) is relatively low (2~3), lead to it Lower energy storage density (~2J/cm3) limits it and widely applies.For example, track magnetic artillery emits needs about every time The energy input of 100MJ, and the volume of the capacitor of energy is provided usually at 10 cubic metres or so, excessive volume and weight is just Significantly limit its more efficient use.In order to improve the dielectric constant and energy storage density of dielectric film, scientific research personnel is by mesh Light has turned to the PVDF based polyalcohols with high polarization ability.2006, Pennsylvania State University of U.S. Zhang Qiming was taught in periodical Science propositions use P (VDF-CTFE) as dielectric energy storage film, obtain being higher than 10 dielectric constant and higher than 10J/cm3's Energy storage density is far above the energy storage density of tradition BOPP.Hereafter, scientific research personnel goes to further increase using a variety of different modes The energy storage density of PVDF based polyalcohols, such as polymer nanocomposites are prepared, build composite material with multi-layer structure The polymer modifications material etc. such as it is blended, is grafted with preparing.Pass through the effort of more than ten years, the nowadays energy storage of PVDF base polymeric materials Density can reach 5~15J/cm3, but its energy storage efficiency but only has 50~70%, this means that a large amount of energy is dissipated. And these energy overwhelming majority to dissipate are converted into useless and harmful thermal energy, due to the intrinsic lower thermal conductivity of polymer material, So that heat is accumulated in polymeric inner, lead to the internal temperature rise of material and final penalty.Therefore, how to ensure height The energy storage efficiency of PVDF based polyalcohols is improved while energy storage density just becomes a research hotspot and difficult point.
The low energy storage efficiency of PVDF based polyalcohols is lost of both being mostly derived from:1) f-e loss:PVDF is a kind of non- Linear ferroelectric material, internal dipole cannot keep up with the variation of extra electric field, there is sluggish phenomenon, this sluggish process can band The loss for carrying out energy, to generate f-e loss.2) conductance is lost:There are free-moving electronics and ion inside PVDF, Under the action of external electric field, meeting displacement forms leakage current, to generate conductance loss.In order to inhibit the damage of PVDF based polyalcohols Consumption, improves the energy storage efficiency of material, scientific research personnel also expands a large amount of research work.2013, Zhang Qiming was taught in P (VDF-TrFE) large-sized CFE or CTFE monomers are added on, P (VDF-TrFE-CFE) or P (VDF-TrFE- is prepared CTFE) terpolymer is reduced the large scale ferroelectric domain in original P (VDF-TrFE) polymer by nanometer restriction effect For the ferroelectric domain of nano-scale, reduce the limitation of domain wall electrode couple overturning so that the dipole of polymeric inner can be powered up externally Rapid response is made in the variation of field, to reduce f-e loss, improves efficiency.Meanwhile Xi Chu universities of U.S. Zhu Lei professors are in P (VDF-TrFE-CTFE) it has been grafted polystyrene PS on the basis of, P (VDF-TrFE-CTFE)-g-PS block copolymers are made, Further suppress the loss of polymer.2010, Xi'an Communications University professor Xu Zhuo had different phase structures by preparation PVDF has found that α-PVDF and γ-PVDF are lower than the loss of β-PVDF, more efficient.Above research work is mainly from suppression The angle of f-e loss processed is set out, and also someone goes to set about from the direction for inhibiting conductance to be lost.2012, professor Zhu Lei utilized microbedding The method of coextrusion is prepared for PVDF/PC (polypropylene) multiple layers of polymeric materials, is moved to charge by layer structure design and interface It moves and inhibits, preferably control the conductance loss of polymeric inner.2015, Pennsylvania State University of U.S. Wang Qing was taught in periodical Energy&Environmental Science propose to go to prepare P (VDF- as filler using BNNS (boron nitride nanosheet) TrFE-CFE)/BNNS nanocomposites, the experimental results showed that, since the big L/D ratio structure and height of BNNS two-dimensional slices are exhausted Edge, composite material exhibits go out lower leakage current and higher breakdown performance, and the composite material of preparation has higher energy storage Density and efficiency.
Although scientific research personnel is made that many effort, the PVDF based polyalcohols being prepared still are difficult to have both height simultaneously Energy storage density and energy storage efficiency.
Invention content
Based on this, it is necessary to still be difficult to have both asking for high energy storage density and energy storage efficiency simultaneously for PVDF based polyalcohols Topic provides a kind of layered dielectric material and preparation method thereof.
A kind of layered dielectric material, including the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth that are stacked, institute It is vinylidene fluoride-hexafluoropropylene copolymer layer to state the first fiber non-woven layer of cloth, and the second fiber non-woven layer of cloth is vinylidene- Total number of plies of trifluoro-ethylene-chlorine fluoride copolymers layer, the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth It is 2~30 layers.
In a wherein embodiment, total layer of the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth Number is 3 layers, and the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth are alternately laminated;
Or, the overlapped way of layered dielectric material is ABA, wherein B represents the first fiber non-woven layer of cloth and institute One of state in the second fiber non-woven layer of cloth, A represents the first fiber non-woven layer of cloth and second fabric nonwoven cloth Layer in another.
In a wherein embodiment, total layer of the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth Number is odd number, and layered dielectric material includes middle layer and the first alternating layer group for being respectively arranged on two sides of the middle layer And the second alternating layer group;The middle layer is the first fiber non-woven layer of cloth or the second fiber non-woven layer of cloth, first alternating layer Group includes alternately stacked first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth, and the second alternating layer group includes alternating layer Folded the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth, and the first alternating layer group and the second alternating layer group The number of plies is identical;The first alternating layer group is different from the material of the middle layer close to one layer of the middle layer, and described second Alternating layer group is different from the material of the middle layer close to one layer of the middle layer;
Or, the overlapped way of layered dielectric material is (AB)nA(BA)nOr B (AB)nA(BA)nB, wherein A represents institute One of state in the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth, B represents first fabric nonwoven cloth Layer and the second fiber non-woven layer of cloth in another;And 1≤n≤7.
In a wherein embodiment, total layer of the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth Number is even number, and layered dielectric material includes the first alternating layer group and the second alternating layer for being laminated in the first alternating layer group Group, the first alternating layer group include alternately stacked first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth, and described second Alternating layer group includes alternately stacked first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth, and the first alternating layer group and The number of plies of the second alternating layer group is identical;In the first alternating layer group close to one layer of the second alternating layer group with it is described Close to one layer of material identical of the first alternating layer group in second alternating layer group;
Or, the overlapped way of layered dielectric material is (AB)m(BA)mOr B (AB)m(BA)mB, wherein A represents first One of in fiber non-woven layer of cloth and the second fiber non-woven layer of cloth, B represents the first fiber non-woven layer of cloth and described Another in two fiber non-woven layer of cloths;And 1≤m≤7.
The preparation method of above-mentioned layered dielectric material, includes the following steps:
Vinylidene fluoride-hexafluoropropylene copolymer is dissolved in the first solvent and obtains the first solution;
Vinylidene-trifluoro-ethylene-chlorine fluoride copolymers are dissolved in the second solvent and obtain the second solution;
It is molded first solution and second solution to obtain intermediate, the centre by the way of electrostatic spinning Body includes the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth being layered on top of each other;Wherein, first solution is molded to obtain First fiber non-woven layer of cloth, second solution are molded to obtain the second fiber non-woven layer of cloth;The first fiber non-woven layer of cloth with Total number of plies of the second fiber non-woven layer of cloth is 2 layers~30 layers;
Hot-pressing processing is carried out to the intermediate;And
Cold quenching processing is carried out to the intermediate.
In a wherein embodiment, first solvent is selected from the mixed liquor of n,N-Dimethylformamide and acetone, Wherein, n,N-Dimethylformamide and the volume ratio of acetone are 3:2~5:1;
And/or second solvent is selected from the mixed liquor of n,N-Dimethylformamide and acetone, wherein N, N- dimethyl The volume ratio of formamide and acetone is 3:2~5:1.
In a wherein embodiment, matter of the vinylidene fluoride-hexafluoropropylene copolymer in first solution It is 15%~30% to measure percentage;
And/or quality percentage of the vinylidene-trifluoro-ethylene-chlorine fluoride copolymers in second solution Than being 15%~30%.
In a wherein embodiment, it is described by the way of electrostatic spinning by first solution and described second molten It is 4kV~15kV that liquid, which is separately formed voltage in the step of obtaining intermediate, and the speed of injecting of syringe pump is 0.1mL/h~2mL/h, Spinning distance is 5cm~50cm, and drum rotation speed is 100rpm~1000rpm, and the spinning time is 10min~10h.
In a wherein embodiment, hot pressing temperature is 150 DEG C~220 DEG C when the hot-pressing processing, and hot pressing pressure is 2MPa~20MPa, hot pressing time are 15min~120min.
In a wherein embodiment, the step of cold quenching processing, specifically includes:
The intermediate is heated, the temperature of the heat treatment is 180 DEG C~240 DEG C, at the heating The time of reason is 5min~30min;And
Cooling processing is carried out to the intermediate, the cooling temperature of the cooling processing is 0~100 DEG C, and cool down processing Time is 2min~15min.
Above-mentioned layered dielectric material and preparation method thereof, using vinylidene fluoride-hexafluoropropylene copolymer layer and vinylidene- Trifluoro-ethylene-chlorine fluoride copolymers layer stackup, vinylidene fluoride-hexafluoropropylene copolymer layer have high breakdown performance, and inclined fluorine Ethylene-trifluoroethylene-chlorine fluoride copolymers Cen has high polarization performance and high energy storage efficiency, and by by vinylidene- Hexafluoropropylene copolymer layer and vinylidene-trifluoro-ethylene-chlorine fluoride copolymers layer are layered on top of each other to control layered dielectric material The inside mesoscopic structure of material is conducive to inhibit conductance loss and f-e loss inside stratiform dielectric material, so that stratiform Dielectric material has both high energy storage density and energy storage efficiency simultaneously.
Description of the drawings
Fig. 1 is the process flow chart of the preparation method of the layered dielectric material of an embodiment;
Fig. 2 is the first fiber non-woven layer of cloth (a), the P (VDF- that P (VDF-HFP) electrostatic spinning in embodiment 1 obtains TrFE-CFE the surface topography (c) and stratiform for the second fiber non-woven layer of cloth (b) and layered dielectric material that) electrostatic spinning obtains are situated between The stereoscan photograph of the cross-section morphology (d) of electric material;
Fig. 3 is the relative dielectric constant frequency spectrum for the layered dielectric material being prepared in Examples 1 to 5;
Fig. 4 is the potentiometer-electric field curve for the layered dielectric material being prepared in Examples 1 to 5.
Specific implementation mode
Layered dielectric material and preparation method thereof is done below in conjunction with specific implementation mode and attached drawing further detailed Explanation.
The layered dielectric material of one embodiment, including the first fiber non-woven layer of cloth being stacked and the second fiber non-woven Layer of cloth.
Further, the first fiber non-woven layer of cloth is vinylidene fluoride-hexafluoropropylene copolymer layer, the second fiber non-woven layer of cloth For vinylidene-trifluoro-ethylene-chlorine fluoride copolymers layer.Further, the first fiber non-woven layer of cloth and the second fiber non-woven The thickness of layer of cloth can be adjusted as needed.
Further, the thickness of the thickness of the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth is identical, certainly, at it In his embodiment, the thickness of the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth can also be different, according to obtained layer The performance of shape dielectric material is adjusted.
In a wherein embodiment, total number of plies of the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth is 2 layers ~30 layers.
Further, the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth are alternately laminated, and layered dielectric material Internal structure is preferably centrosymmetric mode.
In a wherein embodiment, total number of plies of the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth is 2 layers When, the overlapped way of layered dielectric material is AB, and wherein A is the first fiber non-woven layer of cloth, and B is the second fiber non-woven layer of cloth.
In a wherein embodiment, total number of plies of the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth is 3 layers When, the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth are alternately laminated.For example, the overlapped way of layered dielectric material is ABA type, wherein B one of is represented in the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth, and A represents the first fiber Another in nonwoven layer and the second fiber non-woven layer of cloth.
In a wherein embodiment, total number of plies of the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth is odd number Layer.Further, layered dielectric material includes middle layer and the first alternating layer group for being respectively arranged on two sides of middle layer and Two alternating layer groups.Wherein, middle layer is the first fiber non-woven layer of cloth or the second fiber non-woven layer of cloth;First alternating layer group include according to Secondary alternately stacked first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth, the second alternating layer group include alternately stacked successively First fiber non-woven layer of cloth and the second fiber non-woven layer of cloth, and the number of plies of the first alternating layer group and the second alternating layer group is identical.Into One step, the first alternating layer group is different from the material of middle layer close to one layer of middle layer, and the second alternating layer group is close to middle layer One layer it is different from the material of middle layer, that is to say, that when middle layer be the first fiber non-woven layer of cloth when, the first alternating layer group is leaned on One layer of nearly middle layer and the second alternating layer group are the second fiber non-woven layer of cloth close to one layer of middle layer;When middle layer is the When two fiber non-woven layer of cloths, the first alternating layer group close to one layer of middle layer and the second alternating layer group close to one layer of middle layer For the first fiber non-woven layer of cloth.For example, the overlapped way of layered dielectric material is (AB)nA(BA)nOr B (AB)nA(BA)nB, In, A is the first fiber non-woven layer of cloth or the second fiber non-woven layer of cloth;When A is the first fiber non-woven layer of cloth, B is the second fiber Nonwoven layer;When A is the second fiber non-woven layer of cloth, B is the first fiber non-woven layer of cloth;And 1≤n≤7.
In a wherein embodiment, total number of plies of the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth is even Number.Layered dielectric material includes the first alternating layer group and is laminated in the second alternating layer group of the first alternating layer group.Further, One alternating layer group includes alternately stacked first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth successively, the second alternating layer group packet Include alternately stacked first fiber non-woven layer of cloth successively and the second fiber non-woven layer of cloth, and the first alternating layer group and the second alternating layer The number of plies of group is identical.Further, it is leaned on the second alternating layer group close to one layer of the second alternating layer group in the first alternating layer group One layer of material identical of nearly first alternating layer group, that is to say, that when the first alternating layer group is close to one layer of the second alternating layer group For the first fiber non-woven layer of cloth when, the second alternating layer group is also the first fiber non-woven layer of cloth close to one layer of the first alternating layer group; When the first alternating layer group close to one layer of the second alternating layer group be the second fiber non-woven layer of cloth when, the second alternating layer group is close to first One layer of alternating layer group is also the second fiber non-woven layer of cloth.For example, the overlapped way of layered dielectric material is (AB)m(BA)mOr B (AB)m(BA)mB, wherein A is the first fiber non-woven layer of cloth or the second fiber non-woven layer of cloth;When A is the first fiber non-woven layer of cloth When, B is the second fiber non-woven layer of cloth;When A is the second fiber non-woven layer of cloth, B is the first fiber non-woven layer of cloth;And 1≤m≤7.
Further, total number of plies of the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth is even number, and the first fiber Nonwoven layer is suitable with the thickness of the second fiber non-woven layer of cloth, in order to obtain the symmetry of layered dielectric material structure, and layer Vinylidene fluoride-hexafluoropropylene copolymer component and vinylidene-trifluoro-ethylene-chlorine fluoride copolymers component in shape dielectric material Volume ratio be 50:50.
Above-mentioned layered dielectric material and preparation method thereof, vinylidene fluoride-hexafluoropropylene copolymer layer have high breakdown performance, And vinylidene-trifluoro-ethylene-chlorine fluoride copolymers have high polarization performance and high energy storage efficiency, and by by inclined fluorine second Alkene-hexafluoropropylene copolymer layer and vinylidene-trifluoro-ethylene-chlorine fluoride copolymers layer are layered on top of each other to control layered dielectric The inside mesoscopic structure of material is conducive to inhibit conductance loss and f-e loss inside stratiform dielectric material, so that layer Shape dielectric material has both high energy storage density and energy storage efficiency simultaneously.
The reason of symmetrical structure designs is:Dielectric type capacitor usually works under alternating electric field, and symmetrical structure is set Meter ensures dielectric response having the same when capacitor works under positive voltage and reversed negative voltage.
Also referring to Fig. 1, the preparation method of above-mentioned layered dielectric material includes the following steps:
S110, it vinylidene fluoride-hexafluoropropylene copolymer is dissolved in the first solvent obtains the first solution.
In a wherein embodiment, vinylidene fluoride-hexafluoropropylene copolymer (P (VDF-HFP)) is powder state, P (VDF-HFP) molecular weight is 100,000~1,000,000, further, the molecular weight of P (VDF-HFP) can also be 200,000,350,000, 470000,600,000 or 750,000.
In a wherein embodiment, the trade mark that P (VDF-HFP) is purchased from France Arkema is the P (VDF- of 2800-01 HFP) powder.
In a wherein embodiment, the first solvent is the mixed liquor of n,N-Dimethylformamide and acetone, and N, N- The volume ratio of dimethylformamide and acetone is 3:2~5:1, further, the volume ratio of n,N-Dimethylformamide and acetone It can also be 2:1、3:1 or 4:1.
Compared to traditionally only with single n,N dimethylformamide, on the one hand in the mixed solvent addition acetone increases molten On the other hand the volatility of agent is conducive to the viscosity for improving solution, these are all conducive to increase P (VDF-HFP) and P (VDF- TrFE-CFE) the spinnability of polymer fiber.
In a wherein embodiment, mass percents of the P (VDF-HFP) in the first solution is 15%~30%. Further, mass percents of the P (VDF-HFP) in the first solution can also be 17%, 20%, 25% or 27%, preferably , mass percents of the P (VDF-HFP) in the first solution is 25%.
In a wherein embodiment, so that vinylidene fluoride-hexafluoropropylene copolymer is fully molten by the way of stirring Solution is in the first solvent, and stir speed (S.S.) when stirring is 200rpm~500rpm, and the time of stirring is 2h~10h.
S120, it vinylidene-trifluoro-ethylene-chlorine fluoride copolymers is dissolved in the second solvent obtains the second solution.
In a wherein embodiment, vinylidene-trifluoro-ethylene-chlorine fluoride copolymers (P (VDF-TrFE- CFE)) it is powder state, the molecular weight of P (VDF-TrFE-CFE) is 100,000~1,000,000, further, P (VDF-TrFE-CFE) Molecular weight can also be 200,000,350,000,450,000,650,000 or 850,000.
In a wherein embodiment, the trades mark of the P (VDF-TrFE-CFE) purchased from France Arkema is Piezotech P (VDF-TrFE-CFE) powder of RT FS.
In a wherein embodiment, the second solvent is the mixed liquor of n,N-Dimethylformamide and acetone, and N, N- The volume ratio of dimethylformamide and acetone is 3:2~5:1, further, the volume ratio of n,N-Dimethylformamide and acetone It can also be 2:1、3:1 or 4:1.
In a wherein embodiment, mass percents of the P (VDF-TrFE-CFE) in the second solution be 15%~ 30%.Further, mass percents of the P (VDF-TrFE-CFE) in the second solution can also be 18%, 20%, 25% or 27%, it is preferred that mass percents of the P (VDF-TrFE-CFE) in the second solution is 18%.
In a wherein embodiment, P (VDF-TrFE-CFE) is made to be completely dissolved in second by the way of stirring In solvent, stir speed (S.S.) when stirring is 200rpm~500rpm, and the time of stirring is 2h~10h.
S130, the first solution and the second solution is molded by the way of electrostatic spinning to obtain intermediate, the intermediate Including the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth being layered on top of each other.
In a wherein embodiment, the first solvent molding is obtained into the first fiber non-woven by the way of electrostatic spinning Second solvent molding is obtained the second fiber non-woven layer of cloth by layer of cloth by the way of electrostatic spinning.
Further, total number of plies of the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth is 2 layers~30 layers;Using quiet When the mode of Electrospun prepares intermediate, the overlapped way of the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth can be AB Type, ABA type, (AB)nA(BA)nType, B (AB)nA(BA)nType B, (AB)m(BA)mType or B (AB)m(BA)mType B.Specifically hereinbefore It has been had a detailed description that, details are not described herein.
Further, when being molded to obtain intermediate by the way of electrostatic spinning, the voltage of electrostatic spinning be 4kV~ 15kV, syringe pump inject speed be 0.1mL/h~2mL/h, spinning distance be 5cm~50cm, drum rotation speed be 100rpm~ 1000rpm, spinning time are 10min~10h.Further, the spinning distance of electrostatic spinning is preferably 15cm, and drum rotation speed is excellent It is selected as 300rpm.The time of spinning is generally according to the thickness tune of the number of plies and the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth It is whole.
S140, hot-pressing processing is carried out to intermediate.
In a wherein embodiment, it is 150 DEG C~220 DEG C to carry out hot pressing temperature when hot-pressing processing, further, heat Pressure temperature can also be 180 DEG C or 200 DEG C, it is preferred that hot pressing temperature is 200 DEG C.
In a wherein embodiment, hot pressing pressure when carrying out hot-pressing processing is 2MPa~20MPa, further, Hot pressing pressure can also be 6MPa, 10MPa or 15MPa.
In a wherein embodiment, it is 15min~120min to carry out the hot pressing time that hot-pressing processing is, further , hot pressing time can also be 30min or 60min.
S150, cold quenching processing is carried out to intermediate.
In a wherein embodiment, the step of intermediate progress cold quenching processing, is specifically included:
S151, intermediate is heated.
In a wherein embodiment, temperature when heating to intermediate is 180 DEG C~240 DEG C, heating The time of processing is 5min~30min.
S152, cooling processing is carried out to intermediate.
In a wherein embodiment, it is specifically to put into intermediate to cool down that intermediate, which is carried out the step of cooling is handled, Cold quenching is carried out in liquid.Further, coolant liquid is water.
In a wherein embodiment, the cooling temperature that cooling processing is carried out to intermediate is 0~100 DEG C, Ke Yili Solution, cooling temperature here is the temperature of coolant liquid, is 0~100 DEG C.Further, cool down processing cooling temperature also It can be 35 DEG C, 45 DEG C, 60 DEG C or 85 DEG C.
Cold quenching is carried out by the temperature of coolant liquid when control cooling processing, there can be the phase structure for adjusting stratiform dielectric material Composition, to obtain low-loss while ensure the high polarizability of layered dielectric material.With the raising of cooling temperature, P (VDF- HFP) and in P (VDF-TrFE-CFE) ingredient of nonpolarity α phases gradually increases.For example, when 0 DEG C of cold quenching, P (VDF-HFP) and P (VDF-TrFE-CFE) phase structure is that polar beta phase coexists with nonpolarity α phases;When 60 DEG C of cold quenchinges, P (VDF-HFP) and P (VDF- TrFE-CFE) phase structure is mainly nonpolarity α phases.Since relative to polar beta phase, the f-e loss of nonpolar α phases is lower, so Cold quenching temperature increases, and nonpolar phase content increases, and f-e loss declines.For P (VDF-HFP), nonpolar phase content The decline of polarizability can be led to by increasing, and in contrast, for P (VDF-TrFE-CFE), nonpolar phase content increases The polarizability of itself can be made to increase.So comprehensive two kinds of effects, when carrying out cold quenching processing, setting cooling temperature for 0~ 100 DEG C, so that the polarizability of layered dielectric material can be maintained at higher level.
S153, processing is dried to intermediate.
In a wherein embodiment, intermediate after taking out in coolant liquid be dried to the water drying on surface from And obtain layered dielectric material.
In a wherein embodiment, it is 30 DEG C~60 DEG C that the temperature that processing is, which is dried,.Further, it is done The temperature of dry processing can also be 45 DEG C.
The preparation method of above-mentioned layered dielectric material, using vinylidene fluoride-hexafluoropropylene copolymer layer and vinylidene-three Vinyl fluoride-chlorine fluoride copolymers layer stackup, vinylidene fluoride-hexafluoropropylene copolymer layer is with high breakdown performance, and fluorine second partially Alkene-trifluoro-ethylene-chlorine fluoride copolymers Cen has high polarization performance and high energy storage efficiency, and by by vinylidene-six Fluoropropene copolymer layer and vinylidene-trifluoro-ethylene-chlorine fluoride copolymers layer are layered on top of each other to control stratiform dielectric material Inside mesoscopic structure, be conducive to inhibit stratiform dielectric material inside conductance loss and f-e loss so that stratiform be situated between Electric material has both high energy storage density and energy storage efficiency simultaneously.And the preparation method of above-mentioned layered dielectric material is simple, it is easy to accomplish Industrialized production.
It should be noted that in other embodiments, step S153 can also be omitted.
It is the explanation of specific embodiment below, following embodiment unless otherwise specified, is not then contained except inevitably miscellaneous The component pointed out is not known in other other than matter.
Embodiment 1
Taking 1g P (VDF-HFP) powder to be dissolved in the in the mixed solvent of 2.4mL DMF and 1.6mL acetone, to obtain first molten Liquid, separately taking 1g P (VDF-TrFE-CFE) powder to be dissolved in the in the mixed solvent of 3.3mL DMF and 2.2mL acetone, to obtain second molten Liquid, wherein the molecular weight of P (VDF-HFP) powder is that the molecular weight of 470,000, P (VDF-TrFE-CFE) powder is 850,000.First with One solution carries out electrostatic spinning, and spinning condition is:Voltage 10kV;Distance 15cm;Inject speed 0.5mL/h;Drum rotation speed 300rpm;The time of spinning is 40min.Then spinning, spinning condition are carried out with the second solution:Voltage 10kV;Distance 15cm;It pushes away Note speed 0.67mL/h;The time of drum rotation speed 300rpm, spinning are 40min.Later, (including above-mentioned using the sequence of ABBA Carry out AB processes) carry out spinning, obtain the fabric nonwoven cloth intermediate with 4 layers of structure.Carried out hot pressing, temperature 200 DEG C, 10MPa, 30min.After taking-up, on heating platform after 200 DEG C of heating 15min in the water of 60 DEG C of input, cold quenching 5min Afterwards, it is placed in 45 DEG C of baking oven, until the water on surface is thoroughly dried, obtains the finally layered dielectric material with 4 layers of structure.
Embodiment 2
Taking 1g P (VDF-HFP) powder to be dissolved in the in the mixed solvent of 2.4mL DMF and 1.6mL acetone, to obtain first molten Liquid, separately taking 1g P (VDF-TrFE-CFE) powder to be dissolved in the in the mixed solvent of 3.3mL DMF and 2.2mL acetone, to obtain second molten Liquid, wherein the molecular weight of P (VDF-HFP) powder is that the molecular weight of 470,000, P (VDF-TrFE-CFE) powder is 850,000.First with One solution carries out electrostatic spinning, and spinning condition is:Voltage 10kV;Distance 15cm;Inject speed 0.5mL/h;Drum rotation speed 300rpm;The time of spinning is 20min.Then spinning, spinning condition are carried out with the second solution:Voltage 10kV;Distance 15cm;It pushes away Note speed 0.67mL/h;The time of drum rotation speed 300rpm, spinning are 20min.Later, using the sequence of ABABBABA (including Above-mentioned carry out AB processes) spinning is carried out, obtain the fabric nonwoven cloth intermediate with 8 layers of structure.Hot pressing is carried out, temperature 200 DEG C of degree, 10MPa, 30min.After taking-up, on heating platform after 200 DEG C of heating 15min in the water of 60 DEG C of input, cold quenching It after 5min, is placed in 45 DEG C of baking oven, until the water on surface is thoroughly dried, obtains the finally layered dielectric with 8 layers of structure Material.
Embodiment 3
Taking 1g P (VDF-HFP) powder to be dissolved in the in the mixed solvent of 2.4mL DMF and 1.6mL acetone, to obtain first molten Liquid, separately taking 1g P (VDF-TrFE-CFE) powder to be dissolved in the in the mixed solvent of 3.3mL DMF and 2.2mL acetone, to obtain second molten Liquid, wherein the molecular weight of P (VDF-HFP) powder is that the molecular weight of 470,000, P (VDF-TrFE-CFE) powder is 850,000.First with One solution carries out electrostatic spinning, and spinning condition is:Voltage 10kV;Distance 15cm;Inject speed 0.5mL/h;Drum rotation speed 300rpm;The time of spinning is 10min.Then spinning, spinning condition are carried out with the second solution:Voltage 10kV;Distance 15cm;It pushes away Note speed 0.67mL/h;The time of drum rotation speed 300rpm, spinning are 10min.Later, using the suitable of ABABABABBABABABA Sequence (including above-mentioned carry out AB processes) carries out spinning, obtains the fabric nonwoven cloth intermediate with 16 layers of structure.By its into Row hot pressing, 200 DEG C of temperature, 10MPa, 30min.After taking-up, 200 DEG C of water for heating 60 DEG C of input after 15min on heating platform In, it after cold quenching 5min, is placed in 45 DEG C of baking oven, until the water on surface is thoroughly dried, obtains finally with 16 layers of structure Layered dielectric material.
Embodiment 4
Taking 1g P (VDF-HFP) powder to be dissolved in the in the mixed solvent of 2.4mL DMF and 1.6mL acetone, to obtain first molten Liquid, separately taking 1g P (VDF-TrFE-CFE) powder to be dissolved in the in the mixed solvent of 3.3mL DMF and 2.2mL acetone, to obtain second molten Liquid, wherein the molecular weight of P (VDF-HFP) powder is that the molecular weight of 470,000, P (VDF-TrFE-CFE) powder is 850,000.First with One solution carries out electrostatic spinning, and spinning condition is:Voltage 10kV;Distance 15cm;Inject speed 0.5mL/h;Drum rotation speed 300rpm;The time of spinning is 10min.Then spinning, spinning condition are carried out with the second solution:Voltage 10kV;Distance 15cm;It pushes away Note speed 0.67mL/h;The time of drum rotation speed 300rpm, spinning are 10min.Later, using the suitable of ABABABABBABABABA Sequence (including above-mentioned carry out AB processes) carries out spinning, obtains the fabric nonwoven cloth intermediate with 16 layers of structure.By its into Row hot pressing, 200 DEG C of temperature, 10MPa, 30min.After taking-up, 200 DEG C of water for heating 45 DEG C of input after 15min on heating platform In, it after cold quenching 5min, is placed in 45 DEG C of baking oven, until the water of film surface is thoroughly dried, obtains that finally there are 16 layers of knot The layered dielectric material of structure.
Embodiment 5
Taking 1g P (VDF-HFP) powder to be dissolved in the in the mixed solvent of 2.4mL DMF and 1.6mL acetone, to obtain first molten Liquid, separately taking 1g P (VDF-TrFE-CFE) powder to be dissolved in the in the mixed solvent of 3.3mL DMF and 2.2mL acetone, to obtain second molten Liquid, wherein the molecular weight of P (VDF-HFP) powder is that the molecular weight of 470,000, P (VDF-TrFE-CFE) powder is 850,000.First with One solution carries out electrostatic spinning, and spinning condition is:Voltage 10kV;Distance 15cm;Inject speed 0.5mL/h;Drum rotation speed 300rpm;The time of spinning is 10min.Then spinning, spinning condition are carried out with the second solution:Voltage 10kV;Distance 15cm;It pushes away Note speed 0.67mL/h;The time of drum rotation speed 300rpm, spinning are 10min.Later, using the suitable of ABABABABBABABABA Sequence (including above-mentioned carry out AB processes) carries out spinning, obtains the fabric nonwoven cloth intermediate with 16 layers of structure.By its into Row hot pressing, 200 DEG C of temperature, 10MPa, 30min.After taking-up, 200 DEG C of water for heating 0 DEG C of input after 15min on heating platform In, it after cold quenching 5min, is placed in 45 DEG C of baking oven, until the water of film surface is thoroughly dried, obtains that finally there are 16 layers of knot The layered dielectric material of structure.
Embodiment 6
Taking 1g P (VDF-HFP) powder to be dissolved in the in the mixed solvent of 6.4mL DMF and 1.6mL acetone, to obtain first molten Liquid, separately taking 1g P (VDF-TrFE-CFE) powder to be dissolved in the in the mixed solvent of 8.8mL DMF and 2.2mL acetone, to obtain second molten Liquid, wherein the molecular weight of P (VDF-HFP) powder is that the molecular weight of 600,000, P (VDF-TrFE-CFE) powder is 650,000.First with One solution carries out electrostatic spinning, and spinning condition is:Voltage 10kV;Distance 15cm;Inject speed 1.5mL/h;Drum rotation speed 300rpm;The time of spinning is 10min.Then spinning, spinning condition are carried out with the second solution:Voltage 10kV;Distance 15cm;It pushes away Note speed 1.67mL/h;The time of drum rotation speed 300rpm, spinning are 10min.Later, using the suitable of ABABABABBABABABA Sequence (including above-mentioned carry out AB processes) carries out spinning, obtains the fabric nonwoven cloth intermediate with 16 layers of structure.By its into Row hot pressing, 200 DEG C of temperature, 10MPa, 30min.After taking-up, 200 DEG C of water for heating 45 DEG C of input after 15min on heating platform In, it after cold quenching 5min, is placed in 45 DEG C of baking oven, until the water of film surface is thoroughly dried, obtains that finally there are 16 layers of knot The layered dielectric material of structure.
Embodiment 7
Taking 1g P (VDF-HFP) powder to be dissolved in the in the mixed solvent of 2.4mL DMF and 1.6mL acetone, to obtain first molten Liquid, separately taking 1g P (VDF-TrFE-CFE) powder to be dissolved in the in the mixed solvent of 3.3mL DMF and 2.2mL acetone, to obtain second molten Liquid, wherein the molecular weight of P (VDF-HFP) powder is that the molecular weight of 470,000, P (VDF-TrFE-CFE) powder is 850,000.First with One solution carries out electrostatic spinning, and spinning condition is:Voltage 10kV;Distance 15cm;Inject speed 0.5mL/h;Drum rotation speed 300rpm;The time of spinning is 9.5min.Then spinning, spinning condition are carried out with the second solution:Voltage 10kV;Distance 15cm; Inject speed 0.67mL/h;The time of drum rotation speed 300rpm, spinning are 9.5min.Later, using ABABABABABABABABA Sequence (including above-mentioned carry out AB processes) carry out spinning, obtain the fabric nonwoven cloth intermediate with 17 layers of structure, In, A is P (VDF-HFP) fiber non-woven layer of cloth, and B is P (VDF-TrFE-CFE) fiber non-woven layer of cloth.Carried out hot pressing, temperature 200 DEG C, 10MPa, 30min.After taking-up, on heating platform after 200 DEG C of heating 15min in the water of 60 DEG C of input, cold quenching 5min Afterwards, it is placed in 45 DEG C of baking oven, until the water on surface is thoroughly dried, obtains the finally layered dielectric material with 17 layers of structure Material.
Embodiment 8
Taking 1g P (VDF-HFP) powder to be dissolved in the in the mixed solvent of 2.4mL DMF and 1.6mL acetone, to obtain first molten Liquid, separately taking 1g P (VDF-TrFE-CFE) powder to be dissolved in the in the mixed solvent of 3.3mL DMF and 2.2mL acetone, to obtain second molten Liquid, wherein the molecular weight of P (VDF-HFP) powder is that the molecular weight of 470,000, P (VDF-TrFE-CFE) powder is 850,000.First with Two solution carry out electrostatic spinning, and spinning condition is:Voltage 10kV;Distance 15cm;Inject speed 0.5mL/h;Drum rotation speed 300rpm;The time of spinning is 9.5min.Then spinning, spinning condition are carried out with the first solution:Voltage 10kV;Distance 15cm; Inject speed 0.67mL/h;The time of drum rotation speed 300rpm, spinning are 9.5min.Later, using ABABABABABABABABA Sequence (including above-mentioned carry out AB processes) carry out spinning, obtain the fabric nonwoven cloth intermediate with 17 layers of structure, In, A is P (VDF-TrFE-CFE) fiber non-woven layer of cloth, and B is P (VDF-HFP) fiber non-woven layer of cloth.Carried out hot pressing, temperature 200 DEG C, 10MPa, 30min.After taking-up, on heating platform after 200 DEG C of heating 15min in the water of 60 DEG C of input, cold quenching 5min Afterwards, it is placed in 45 DEG C of baking oven, until the water on surface is thoroughly dried, obtains the finally layered dielectric material with 17 layers of structure Material.
Embodiment 9
The in the mixed solvent that 2g P (VDF-HFP) powder is dissolved in 4.8mL DMF and 3.2mL acetone is taken to obtain the first solution Wherein, the molecular weight of P (VDF-HFP) powder is 470,000.Electrostatic spinning is carried out with the first solution, spinning condition is:Voltage 10kV; Distance 15cm;Inject speed 0.5mL/h;Drum rotation speed 300rpm;The time of spinning is 160min, is obtained among fabric nonwoven cloth Body.Carried out hot pressing, 200 DEG C of temperature, 10MPa, 30min.After taking-up, put into after 200 DEG C of heating 15min on heating platform It in 45 DEG C of water, after cold quenching 5min, is placed in 45 DEG C of baking oven, until the water on surface is thoroughly dried, obtains final dielectric material Material.
Embodiment 10
The in the mixed solvent that 2g P (VDF-TrFE-CFE) powder is dissolved in 6.6mL DMF and 4.4mL acetone is taken to obtain Two solution, wherein the molecular weight of P (VDF-TrFE-CFE) powder is 850,000.Spinning, spinning condition are carried out with the second solution:Electricity Press 10kV;Distance 15cm;Inject speed 0.67mL/h;Drum rotation speed 300rpm, time of spinning are 160min, obtain fiber without Woven fabric intermediate.Carried out hot pressing, 200 DEG C of temperature, 10MPa, 30min.After taking-up, 200 DEG C of heating on heating platform It puts into 45 DEG C of water after 15min, after cold quenching 5min, is placed in 45 DEG C of baking oven, until the water on surface is thoroughly dried, obtain Final dielectric material.
The first fiber non-woven layer of cloth (a), the P (VDF-TrFE- that P (VDF-HFP) electrostatic spinning in embodiment 1 is obtained CFE the surface topography (c) and layered dielectric material for the second fiber non-woven layer of cloth (b) and layered dielectric material that) electrostatic spinning obtains The cross-section morphology (d) of material is scanned Electronic Speculum test, and the results are shown in Figure 2, wherein uses Zeiss when being scanned Electronic Speculum test The scanning electron microscope instrument of the MWRLIN compact of company is tested.
The copper electrode of a diameter of 3mm will be deposited on layered dielectric material or dielectric material that Examples 1 to 10 is prepared, Dielectric properties test is carried out again.
Wherein, stratiform Examples 1 to 5 being prepared using the HP4294A precise impedances analyzer of agilent company The relative dielectric constant of dielectric material is tested, and obtains relative dielectric constant frequency spectrum as shown in figure 3, the specific parameter tested For:Bias 1V, frequency range 102~107Hz;
Examples 1 to 5 is prepared into using the Premier II ferroelectricity testers of Radiant Technologies companies To dielectric displacement-electric field curve of layered dielectric material tested, the results are shown in Figure 4, and the specific parameter of test is:It surveys Try frequency 10Hz;
Examples 1 to 10 is prepared into using the Premier II ferroelectricity testers of Radiant Technologies companies To layered dielectric material or the energy storage efficiency and energy storage density of dielectric material tested, the results are shown in Table 1, the tool of test The parameter of body is:Test frequency 10Hz.
Table 1
Pure P (VDF-TrFE-CFE) energy storage density of itself is can be seen that from the energy storage density of embodiment 10 to only have 7.53J/cm3, this is because P (VDF-TrFE-CFE) breakdown is low, and the energy storage efficiency of embodiment 9 can be seen that pure P (VDF- HFP energy storage efficiency) only has 77.48%, less than 80%.And by the way of being layered on top of each other, a large amount of sight interfaces that are situated between can be introduced, This interface can hinder the migration of carrier and the growth of electric branch, so as to inhibit leakage current, improve disruptive field intensity.Institute To be significantly improved relative to P (VDF-TrFE-CFE) disruptive field intensity, energy storage density also improves.And inhibit leakage current notable It reduces leakage and leads loss, in addition the cold quenching to different water temperatures can be with the f-e loss of inhibition system, phase to the adjusting of system phase structure Compared with pure P (VDF-HFP), the sample energy storage efficiency of stacking is also increased to 80% or more.
The mixed solvent using proper ratio is can be seen that from Fig. 2 a, b, P (the VDF-HFP) (figures that electrostatic spinning obtains 2a) and P (VDF-TrFE-CFE) (Fig. 2 b) nanofiber surface is smooth, and does not have the phenomenon that beading to occur.By hot pressing, heat After processing and cold quenching, obtained layered composite film surface is smooth fine and close (Fig. 2 c), and section thickness is uniform, and dense non-porous (Fig. 2 c) illustrates the thin polymer film that high quality has been prepared.
Fig. 3 is the relative dielectric constant of Examples 1 to 5 sample with the variation relation figure of frequency.Wherein, Examples 1 to 3 Sample uses identical heat treatment process, and the only internal number of plies is different, and test result can be seen that and see, with the internal number of plies Increase, the relative dielectric constant of sample is continuously increased, this is because the internal number of plies increases, Jie that can increase system sees interface face Product, to increase the interfacial polarization of system, improves whole dielectric constant.The sample of comparative example 3~5, the internal number of plies It is identical, the difference is that using different cold quenching technique, it can be seen that with the decline of the water temperature of cold quenching, the opposite dielectric of system Constant also declines.This is because when cold quenching water temperature drop, the phase structure of the phase P (VDF-TrFE-CFE) in system is by non-pole Based on property phase, be changed into nonpolar phase mutually coexists with polarity, and for P (VDF-TrFE-CFE), the idol in nonpolar phase Pole is easier to issue raw overturning in outer field action, to dielectric constant bigger.
Fig. 4 is the polarization curve of Examples 1 to 5.Comparative example 1~3, it can be seen that identical in heat treatment process In the case of, the number of plies is more inside system, and the disruptive field intensity of system is higher, and electric polarization value is also high, thus it is close to obtain discharge energy Degree is also bigger.This is because the sight interface that is situated between is weak electric field area, the growth of electric branch can be inhibited, the system inside number of plies is more, is situated between Sight interface is more, and stronger to the inhibiting effect of electric branch, the disruptive field intensity of system is also higher.Comparative example 3~5, can be with Find out, the number of plies is identical inside system, and with the reduction of cold quenching water temperature, the polarization curve of system gradually becomes fat, this Mean that the dielectric loss of system gradually increases, efficiency continuously decreases.This is because with the decline of cold quenching temperature, the phase of system Structure is by being changed into the state mutually coexisted with non-polar and polar based on nonpolar phase, and the f-e loss of polarity phase is big, the phase Increase can increase the dielectric loss of system.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.

Claims (10)

1. a kind of layered dielectric material, which is characterized in that including the first fiber non-woven layer of cloth for being stacked and the second fiber without Woven fabric layer, the first fiber non-woven layer of cloth are vinylidene fluoride-hexafluoropropylene copolymer layer, and the second fiber non-woven layer of cloth is Vinylidene-trifluoro-ethylene-chlorine fluoride copolymers layer, the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth Total number of plies be 2~30 layers.
2. layered dielectric material according to claim 1, which is characterized in that the first fiber non-woven layer of cloth and described Total number of plies of two fiber non-woven layer of cloths is 3 layers, the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth alternating layer It is folded;
Or, the overlapped way of layered dielectric material is ABA, wherein B represents the first fiber non-woven layer of cloth and described the One of in two fiber non-woven layer of cloths, A is represented in the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth Another.
3. layered dielectric material according to claim 1, which is characterized in that the first fiber non-woven layer of cloth and described Total number of plies of two fiber non-woven layer of cloths is odd number, and layered dielectric material includes middle layer and is respectively arranged on the middle layer two The the first alternating layer group and the second alternating layer group of a side;The middle layer is the first fiber non-woven layer of cloth or the second fiber non-woven Layer of cloth, the first alternating layer group include alternately stacked first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth, and described Two alternating layer groups include alternately stacked first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth, and the first alternating layer group And the number of plies of the second alternating layer group is identical;One layer and the middle layer of the first alternating layer group close to the middle layer Material it is different, the second alternating layer group is different from the material of the middle layer close to one layer of the middle layer;
Or, the overlapped way of layered dielectric material is (AB)nA(BA)nOr B (AB)nA(BA)nB, wherein A represents described One of in one fiber non-woven layer of cloth and the second fiber non-woven layer of cloth, B represent the first fiber non-woven layer of cloth and Another in the second fiber non-woven layer of cloth;And 1≤n≤7.
4. layered dielectric material according to claim 1, which is characterized in that the first fiber non-woven layer of cloth and described Total number of plies of two fiber non-woven layer of cloths is even number, and layered dielectric material includes the first alternating layer group and is laminated in described first Second alternating layer group of alternating layer group, the first alternating layer group include that alternately stacked first fiber non-woven layer of cloth and second are fine Nonwoven layer is tieed up, the second alternating layer group includes alternately stacked first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth, And the number of plies of the first alternating layer group and the second alternating layer group is identical;Close to described second in the first alternating layer group One layer of alternating layer group and one layer of the material identical close to the first alternating layer group in the second alternating layer group;
Or, the overlapped way of layered dielectric material is (AB)m(BA)mOr B (AB)m(BA)mB, wherein A represents the first fiber One of in nonwoven layer and the second fiber non-woven layer of cloth, B represents the first fiber non-woven layer of cloth and second fibre Tie up another in nonwoven layer;And 1≤m≤7.
5. such as the preparation method of Claims 1 to 4 any one of them layered dielectric material, which is characterized in that including following step Suddenly:
Vinylidene fluoride-hexafluoropropylene copolymer is dissolved in the first solvent and obtains the first solution;
Vinylidene-trifluoro-ethylene-chlorine fluoride copolymers are dissolved in the second solvent and obtain the second solution;
First solution and second solution is molded by the way of electrostatic spinning to obtain intermediate, the intermediate packet Include the first fiber non-woven layer of cloth and the second fiber non-woven layer of cloth being layered on top of each other;Wherein, first solution is molded to obtain first Fiber non-woven layer of cloth, second solution are molded to obtain the second fiber non-woven layer of cloth;The first fiber non-woven layer of cloth with it is described Total number of plies of second fiber non-woven layer of cloth is 2 layers~30 layers;
Hot-pressing processing is carried out to the intermediate;And
Cold quenching processing is carried out to the intermediate.
6. the preparation method of layered dielectric material according to claim 5, which is characterized in that first solvent is selected from N, The mixed liquor of dinethylformamide and acetone, wherein n,N-Dimethylformamide and the volume ratio of acetone are 3:2~5:1;
And/or second solvent is selected from the mixed liquor of n,N-Dimethylformamide and acetone, wherein N, N- dimethyl formyl The volume ratio of amine and acetone is 3:2~5:1.
7. the preparation method of layered dielectric material according to claim 5, which is characterized in that the vinylidene-hexafluoro Mass percent of the propylene copolymer in first solution is 15%~30%;
And/or mass percent of the vinylidene-trifluoro-ethylene-chlorine fluoride copolymers in second solution is 15%~30%.
8. the preparation method of layered dielectric material according to claim 5, which is characterized in that described using electrostatic spinning Voltage is 4kV~15kV, note in the step of mode is separately formed first solution and second solution to obtain intermediate The speed of injecting for penetrating pump is 0.1mL/h~2mL/h, and spinning distance is 5cm~50cm, and drum rotation speed is 100rpm~1000rpm, The spinning time is 10min~10h.
9. the preparation method of layered dielectric material according to claim 5, which is characterized in that the hot pressing when hot-pressing processing Temperature is 150 DEG C~220 DEG C, and hot pressing pressure is 2MPa~20MPa, and hot pressing time is 15min~120min.
10. the preparation method of layered dielectric material according to claim 5, which is characterized in that the step of the cold quenching processing Suddenly it specifically includes:
The intermediate is heated, the temperature of the heat treatment is 180 DEG C~240 DEG C, the heat treatment Time is 5min~30min;And
Cooling processing is carried out to the intermediate, the cooling temperature of the cooling processing is 0~100 DEG C, the time for the processing that cools down For 2min~15min.
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CN101356603A (en) * 2005-12-28 2009-01-28 宾夕法尼亚州研究基金会 High electric energy density polymer capacitors with fast discharge speed and high efficiency based on unique poly(vinylidene fluoride) copolymers and terpolymers as dielectric materials
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