CN108630590B - Substrate support and substrate processing apparatus provided with the same - Google Patents
Substrate support and substrate processing apparatus provided with the same Download PDFInfo
- Publication number
- CN108630590B CN108630590B CN201710176677.4A CN201710176677A CN108630590B CN 108630590 B CN108630590 B CN 108630590B CN 201710176677 A CN201710176677 A CN 201710176677A CN 108630590 B CN108630590 B CN 108630590B
- Authority
- CN
- China
- Prior art keywords
- lift
- pair
- substrate processing
- processing apparatus
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 236
- 238000012545 processing Methods 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 claims abstract description 82
- 230000008569 process Effects 0.000 claims abstract description 76
- 238000007789 sealing Methods 0.000 claims description 133
- 239000000463 material Substances 0.000 claims description 35
- 230000000149 penetrating effect Effects 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 11
- 238000003780 insertion Methods 0.000 claims description 11
- 230000037431 insertion Effects 0.000 claims description 11
- 238000007751 thermal spraying Methods 0.000 claims description 10
- 238000005485 electric heating Methods 0.000 claims description 8
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 2
- 239000010953 base metal Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 5
- 230000008021 deposition Effects 0.000 abstract description 4
- 230000003028 elevating effect Effects 0.000 description 19
- 230000008602 contraction Effects 0.000 description 15
- 239000007789 gas Substances 0.000 description 14
- 230000008901 benefit Effects 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- -1 polytetrafluoroethylene Polymers 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs substrate processing such as etching and deposition on a substrate. The invention discloses a substrate processing apparatus, which is characterized by comprising: the substrate processing apparatus includes a process chamber forming a processing space for performing substrate processing on two straight quadrangular substrates introduced from the outside, and a substrate support provided in the process chamber to support the two straight quadrangular substrates.
Description
Technical Field
The present invention relates to a Substrate processing apparatus (Substrate supporting module and Substrate processing apparatus), and more particularly, to a Substrate supporting frame for performing Substrate processing such as etching and deposition on a Substrate and a Substrate processing apparatus provided with the same.
Background
Generally, a substrate processing apparatus includes: a process chamber forming a processing space for substrate processing; and a substrate support frame disposed inside the process chamber to support the substrate.
The substrate processing apparatus is provided with a gas supply unit such as a shower head, a pressure control system, an exhaust system for exhausting, and the like, depending on the type and manner of substrate processing.
In the substrate processing state, when the substrate processing is performed under the process pressure, an electrostatic chuck is provided to fix the substrate by electrostatic force.
The substrate processing apparatus having the above-described structure is designed to process substrates of 6 th generation, 7 th generation, 8 th generation, etc., and the size thereof is increased according to the size of the substrate, and generally, the size, the mode, etc. are most suitable according to the increased substrate specification.
However, as described above, the substrate processing apparatus optimized in each size cannot be applied to the substrate processing of different sizes in accordance with different specifications, and in order to be applied to the substrate processing apparatus optimized in accordance with the second size, it is necessary to newly set the size of the substrate processing apparatus, which causes a problem of extra investment cost.
Disclosure of Invention
(problem to be solved)
The invention aims to provide a substrate processing device for mounting two straight quadrangular substrates in order to process the substrates.
(means for solving the problems)
The present invention is made to achieve the above object, and discloses a substrate processing apparatus, comprising: the substrate processing apparatus includes a process chamber forming a processing space for performing substrate processing on two rectangular substrates introduced from the outside, and a substrate support frame provided in the process chamber and supporting the two rectangular substrates.
The substrate support stand includes: an electrostatic chuck on which the substrate is mounted; and more than one outline sealing component, set up along the edge of the said static sucker detachably; and one or more central sealing members disposed on the upper portion of the electrostatic chuck between the two rectangular substrates, connecting the outline sealing members, and defining a pair of support regions to support the two rectangular substrates, respectively.
The electrostatic chuck includes: the semiconductor device includes a base material made of a metal material, a first insulating layer formed on the base material by thermal spraying, a conductor layer formed on the first insulating layer and connected to a DC power source to apply a power source to generate an electrostatic force, and a second insulating layer formed on the conductor layer by thermal spraying.
The base material is opposite to the central sealing part, and a bottom groove is formed at the upper part of the base material.
An insulating layer is formed on the surface of the bottom groove, and finally an insertion groove into which the central sealing member can be inserted is formed.
The inner side surface of the bottom groove and the upper surface of the base material form an inclination, and the width decreases from the upper side to the lower side.
In an inclination angle formed by the upper portion of the base material and the inner side surface of the bottom groove, an obtuse angle is inversely proportional to the depth of the bottom groove.
The base material is made of aluminum or aluminum alloy, anodic oxidation treatment is carried out before the first insulating layer is formed, and the inner side surface of the bottom groove is perpendicular to the upper portion of the base material.
Each of the support regions comprises: a plurality of protruding parts formed in a protruding manner so that the electric heating gas is filled between the bottom of the substrate and the upper part of the electrostatic chuck; and a base for supporting the bottom edge of the substrate to prevent the electric heating gas from leaking to the outside.
The upper portion of the central sealing member is at the same height as or lower than the base.
The central sealing part is positioned between the bases, and the bases correspond to the opposite inner side edges of the straight quadrangular substrate.
The support regions independently control the supply of the electrically heated gas.
The central seal member is integrally formed with at least a portion of the contour seal member.
The central seal member and the outer contour seal member at least partially overlap each other.
The substrate processing apparatus further includes a lift bar assembly disposed in the process chamber and including a plurality of lift bars to pass through the substrate support frame to move up and down,
the lift bar assembly comprises: and a central lift bar elevating part provided along a central portion of the substrate support frame which is a boundary portion where the 2 rectangular substrates face each other, and configured to simultaneously support bottom surfaces of the 2 rectangular substrates adjacent to each other by elevating and lowering driving of a single driving source. The central lifter lifting portion includes: a sealing member having a sealing tool and provided on the through hole of the process chamber; and a lifting rod which passes through the sealing component and is driven to lift by the driving source combined at one end; and a lift lever support part coupled to the other end of the lift lever and supporting the pair of central lift levers at the same time; and a telescopic part which hermetically connects the space between the sealing part and the lifting rod supporting part and can be vertically telescopic.
The central lifter lifting portion includes: a sealing member having a sealing tool and provided on the through hole of the process chamber; and a lifting rod which passes through the sealing component and is driven to lift by the driving source combined with one end of the lifting rod; the main supporting part is combined at the other end of the lifting rod; a pair of lift bar support parts which are provided at an upper part of the main support part, can move up and down, and support the pair of central lift bars at the upper part; and a pair of height adjustment rods protruding toward the lower side of the sealing member, respectively coupled to the lift rod support parts, penetrating the main support part, and being lifted to adjust the heights of the pair of central lift rod support parts; a telescopic part which hermetically connects the space between the sealing member and the main support and can be telescopic; and an auxiliary telescopic part hermetically connecting the space between the lifting rod supporting part and the main supporting part and capable of vertically extending and retracting.
The central lifter lifting portion includes: a sealing member having a sealing tool and provided on the through hole of the process chamber; a pair of lifting rods which pass through the sealing component and are driven to lift by the driving source connected with one end of the lifting rods; and a rod supporting part which supports one end of the pair of lifting rods protruding to the lower side of the sealing component and is driven to lift by the driving source; a lift lever support part which is coupled to the other ends of the pair of lift levers, respectively, and supports the pair of central lift levers at the same time; and a telescopic part which hermetically connects the space between the sealing part and the lifting rod supporting part and can be vertically telescopic.
The central lifter lifting portion includes: a sealing member having a sealing tool and provided on the through hole of the process chamber; a pair of lift rods penetrating the sealing member and driven to be lifted by the driving source coupled to one end of the sealing member; and a rod support part which supports one ends of the pair of lifting rods protruding to the lower side of the sealing component and is driven by the driving source to lift; and a pair of lift lever support portions coupled to the other ends of the pair of lift levers, respectively, and supporting the pair of center lift levers at upper portions thereof, respectively; and a telescopic part which hermetically connects the space between the sealing part and the lifting rod supporting part and can be vertically telescopic.
The pair of expansion portions includes: and flange portions radially extending from the portions joined to the sealing members.
The flange part of the expansion part and the flange part of the adjacent expansion part are overlapped up and down.
The expansion part includes: a plurality of telescopic members which are arranged along the vertical direction and have variable vertical lengths; and an intermediate member disposed between the plurality of extensible members and vertically connecting the extensible members located at the upper side and the lower side.
The pair of central lift rods are provided on the lift rod support portions, and the vertical height can be finely adjusted.
(Effect of the invention)
According to the substrate support stand and the substrate processing apparatus provided with the same of the present invention, there is provided a substrate support stand capable of supporting two substrates in a straight quadrangle, based on a structure of a substrate processing apparatus for processing before dividing into two substrates, and thus, there is an advantage that the substrate processing apparatus for processing before dividing into two substrates can be easily modified to process substrates in a straight quadrangle at a time.
In particular, according to the substrate support stand and the substrate processing apparatus provided with the same of the present invention, there is an advantage in that the substrate processing apparatus for processing two substrates at a time can be easily deformed based on the configuration of the substrate processing apparatus for processing two substrates before being divided into two substrates, including the substrate support stand provided with the first electrostatic chuck and the second electrostatic chuck corresponding to the two substrates divided into two straight quadrangles.
Further, according to the substrate support frame and the substrate processing apparatus provided with the same of the present invention, there is an advantage in that the substrate processing apparatus for processing two substrates divided into two straight quadrangles can be easily modified by additionally providing a central sealing member for protecting the electrostatic chuck at a position between the two divided straight quadrangle substrates based on a structure of the substrate processing apparatus for processing two substrates divided into two, thereby performing the substrate processing on the two divided straight quadrangle substrates at one time.
In particular, according to the substrate support stand and the substrate processing apparatus provided with the same of the present invention, the substrate processing apparatus that performs processing before dividing into two substrates is simply modified to perform substrate processing on two substrates in straight quadrangles at one time, thereby maximizing reuse of existing facilities, and thus having advantages of not only dividing the substrate to be processed but also minimizing additional facility investment costs for processing the divided substrates.
Further, according to the substrate support frame and the substrate processing apparatus provided with the same of the present invention, based on the structure of the substrate processing apparatus that performs processing before dividing into two substrates, the center seal member for protecting the electrostatic chuck is additionally provided at a position between the two rectangular substrates, the bottom groove provided in the center seal member is formed in the base material, the insulating layer is formed on the surface thereof, and the insertion groove is finally formed, so that the insertion of the center seal member is easy.
Further, since the insulating layer is formed on the surface of the bottom groove and the inner surface is formed obliquely, the entire surface of the base material is covered when the insulating layer is formed by hot injection, and the surface of the base material is prevented from being exposed to the outside.
Further, according to the substrate processing apparatus of the present invention, there is an advantage in that the substrate processing apparatus for processing substrates divided into two straight quadrangles at a time can be easily deformed by moving up and down the substrate support frame capable of supporting the divided two straight quadrangle substrates and the pair of central lift rods for supporting the edges of the two substrates between the two substrates, based on the configuration of the substrate processing apparatus for processing substrates before divided into two substrates.
In particular, there is an advantage that the interference between the lift bar assembly members for driving up and down is minimized by moving up and down the two rectangular base plates by the pair of central lift bars supporting the two rectangular base plates, respectively, at the same time, and thus the interval between the two rectangular base plates can be minimized.
Specifically, the present invention has an advantage that the entire size of the process chamber can be minimized by supporting a pair of central lift pins, which simultaneously support two rectangular substrates, as one member and driving the member supporting the pair of central lift pins to move up and down, thereby minimizing the gap between the two substrates, particularly the gap between the lift pins.
Drawings
Fig. 1 is a plan view illustrating a substrate processing apparatus according to the present invention.
Fig. 2 is a sectional view of the substrate processing apparatus of fig. 1 in a direction ii-ii.
Fig. 3 is a partial sectional view in the iii-iii direction of the substrate processing apparatus of fig. 1.
Fig. 4 is an enlarged view showing an enlarged portion of fig. 2 where the contour seal member and the center seal member are provided.
Fig. 5 is a cross-sectional view showing an example of an electrostatic chuck modified in the substrate processing apparatus of fig. 1.
Fig. 6a to 6d are partial sectional views showing an example of a base material of a substrate support frame used in the substrate processing apparatus of fig. 1.
Fig. 7 is a partial sectional view illustrating a central lift rod elevating part in the substrate processing apparatus of fig. 1.
Fig. 8a is a partial sectional view showing a modification of the center lift lever elevating part of fig. 7.
Fig. 8b is a plan view illustrating the structure of the adjustment plate in fig. 8 a.
Fig. 9 is a partial sectional view showing another modification of the center lifter lifting portion of fig. 7.
Fig. 10 is a partial sectional view showing still another modification of the center lifter lifting unit of fig. 7.
(description of reference numerals)
10: substrate 100: substrate processing apparatus
130: substrate support frame 200: electrostatic chuck
270: central sealing member
Detailed description of the preferred embodiments
Hereinafter, a substrate support frame and a substrate processing apparatus provided with the same according to the present invention will be described in detail with reference to the accompanying drawings. Fig. 1 to 10 are illustrated for explaining the present invention, and it is needless to say that some of the structures are exaggerated or different from the actual ones.
First, a technical gist of the present invention is to provide a substrate processing apparatus capable of dividing two rectangular substrates into two pieces of a size at a time.
In particular, the structure of the substrate support frame for supporting two rectangular substrates (preferably, the two rectangular substrates have the same size) is important in the processing of the two substrates.
According to the substrate processing apparatus of the present invention, the structure of the substrate support frame can be changed based on the structure of the substrate support frame, and two substrates are stably fixed by suction by one electrostatic chuck.
Hereinafter, an example in which two substrates are stably fixed by suction with one electrostatic chuck will be described as an example.
As shown in fig. 1 and 2, the substrate processing apparatus according to the present invention includes: the substrate processing apparatus includes a process chamber 100 forming a processing space S for performing a substrate process on two rectangular substrates 10 introduced from the outside, and a substrate support frame 130 provided in the process chamber 100 to support the two rectangular substrates 10.
Here, the substrate processing may be a deposition step of forming a thin film on the surface of the substrate, an etching step of performing etching, or other various steps.
The substrate processing target may be any substrate processing target such as etching or deposition, for example, a substrate for an LCD panel or an OLED substrate.
The process chamber 100 includes: a chamber body 110 detachably coupled to each other to form a process space S, and an upper cover 120.
The chamber body 110 may have various structures according to design, and at least one shutter 111 is formed to be opened and closed by a shutter valve (not shown) so that the substrate 10 can be loaded.
In addition, the process chamber 100 is mounted with a device for performing a vacuum process, such as a gas supply unit 140, which injects a process gas received from a gas supply device (not shown) into the process space S, a substrate support 130, on which the substrate 10 is mounted, and an exhaust pipe (not shown) connected to an exhaust system for pressure adjustment and exhaust in the process space S, and the like.
The substrate support 130 is provided with a lower electrode (not shown) to which power is applied, so that a reaction such as a vacuum process is generated in the processing space (S) to form plasma for performing a process.
Here, the lower electrode may be applied with power in various manners such as grounding the chamber body 110 and the gas supply unit 140 and applying one or two RF powers, grounding the lower electrode and applying an RF power to the chamber body 110 and the gas supply unit 140, or applying a first RF power to the lower electrode and applying a second RF power to the chamber body 110 and the gas supply unit 140, depending on the manner of applying power.
Also, the substrate support shelf 130 further includes: a cooling plate (cooling plate) is coupled to a lower portion of the electrostatic chuck 200, which will be described later, to form a flow path through which an electrothermal fluid of a controlled temperature can flow, thereby increasing a temperature for performing a substrate process using plasma or heat generated in a cooling process.
Also, the substrate support 130 is additionally provided with an insulating plate (not shown), and the chamber body 110 is grounded and positioned between the electrostatic chuck 200 and the chamber body 110 to insulate the electrostatic chuck 200 from the chamber body 110.
Preferably, the insulating plate is provided with a cooling plate (not shown) which is coupled below the cooling plate.
Also, the substrate support shelf 130 further includes: the bottom plate (not shown) is coupled to a lower portion of the insulating plate and supported by a plurality of flanges 160 provided on a bottom surface of the chamber body 110.
The substrate support 130 is fixed in the process chamber 100, and is vertically movable and disposed in the process chamber 100.
As shown in fig. 1 to 4, the substrate holder 130 includes: an electrostatic chuck 200 for fixing the substrate 10 by electrostatic force; and one or more contour sealing members 250 detachably provided along the edge of the electrostatic chuck 200 to form a right quadrangle; and one or more central sealing members 270 disposed on the upper portion of the electrostatic chuck between the two rectangular substrates, connecting the outer-shape sealing members 250, and defining a pair of support regions a1 and a2 to support the two rectangular substrates 10, respectively.
As shown in fig. 2 to 4, the electrostatic chuck 200 includes: a base material 210 having a rectangular planar shape and made of a metal material; and a first insulating layer formed on the base material 210 by thermal spraying; and a conductor layer 230 formed on the first insulating layer 220, connected to a DC power source and applying a power source to generate an electrostatic force; and a second insulating layer 240 formed on the conductor layer 230 by thermal spraying.
The base material 210 may be made of a metal material such as aluminum, aluminum alloy, Ti, stainless steel (SUS or STS), etc., and may be configured to have a rectangular planar shape, and the lower electrode of the power applying unit may function by grounding the base material or applying RF power.
The base member 210 faces the center seal member 270, and has a bottom recess 217 formed at an upper portion thereof.
The bottom groove 217 is formed for finally forming an insertion groove 247, wherein a central sealing member 270 is inserted into the insertion groove 247. The bottom groove 217 is determined in its sectional shape and depth in consideration of the size of the insertion groove 247 into which the central sealing member 270 is inserted after the insulating layer is formed.
In addition, when at least one of the first insulating layer 220 and the second insulating layer 240 is formed in the bottom groove 217, or an insulating layer may be separately formed, as shown in fig. 2 to 4 and 6a to 6d, it is preferable that the inner side surface is inclined from the upper portion of the base material 210 to form the inclined surface 218 such that the width decreases from the upper side to the lower side, in consideration of the fact that the insulating layer is coated by thermal spraying.
In particular, as shown in fig. 6a to 6d, it is preferable that the obtuse angle θ is inversely proportional to the depth H of the bottom groove 217 in the inclination angle formed by the upper portion of the base material 210 and the inner surface of the bottom groove 217.
In addition, fig. 5 to 6d omit illustration of the lifting lever combination described later for convenience.
As described above, when the insulating layer is formed on the inner circumferential surface of the bottom recess 217 by plasma thermal spraying, if the thickness of the insulating layer formed at a low depth is relatively thin, the insulating layer can be smoothly formed on the inner circumferential surface of the bottom recess 217 only if the obtuse angle θ is inversely proportional to the depth H of the bottom recess 217 in the inclination angle formed by the upper portion of the base material 210 and the inner side surface of the bottom recess 217.
When stainless steel (SUS or STS) is used as the base material 210, the central sealing member 270 is preferably made of ceramic in consideration of thermal expansion.
Here, when the base material 210 is aluminum or an aluminum alloy, the central sealing member 270 may be made of aluminum or an aluminum alloy, a ceramic material, or the like.
When the base material 210 is made of aluminum or an aluminum alloy, the inner surface of the bottom recess 217 may be inclined with respect to the upper portion of the base material 210, or may be in a perpendicular relationship as shown in fig. 5 and 6a, by performing an anodic oxidation process before forming the first insulating layer 220.
The first insulating layer 220 and the second insulating layer 240 may be made of various materials to have a predetermined permittivity, and may be made of an insulating material Al in order to function as an electrostatic chuck2O3、ZrO3AlN and Y2O3And the like.
Here, the second insulating layer 240 forms a pair of support regions a1 and a2 to support two rectangular substrates 10, respectively.
The second insulating layer 240 forming the pair of support regions a1 and a2 supports the substrate 10, and a plurality of protrusions 241 are protruded between the bottom surface of the substrate 10 and the electrostatic chuck 200, that is, the upper portion of the electrostatic chuck 200, for temperature control, so as to fill with an electric heating gas such as helium He, and a pedestal 242 supporting the edge of the bottom surface of the substrate 10 may be formed in order to prevent the electric heating gas from leaking to the outside.
In addition, at least one or another insulating layer of the first insulating layer 220 and the second insulating layer 240 may be formed on the bottom groove 217 formed on the base material 210, and an insertion groove 247 into which the central sealing member 270 is inserted may be formed on an upper portion of the finally formed insulating layer.
The insertion groove 247 serves as a groove portion into which the central sealing member 270 is inserted, and at least any one of the first insulating layer 220 and the second insulating layer 240 is formed, and may be formed in various structures according to design.
In particular, the insertion groove 247 is deeper at the lower end of the central sealing member 270 than at the upper portion of the base material 210 in consideration of the thickness of the first insulating layer 220, the second insulating layer 240, and the like in terms of sub-micron.
As described above, if the lower end of the central sealing member 270 is deeper than the upper portion of the base material 210 by the insertion groove 247, plasma intrusion and the like can be effectively prevented during the execution process, and damage of the electrostatic chuck can be prevented.
The conductive layer 230 may be made of a conductive material such as tungsten W, in a structure in which a DC power source is connected to generate an electrostatic force together with the second insulating layer 240, and the mounting substrate 10 is finally attached to the second insulating layer 240 by suction.
Also, the conductor layer 230 may be divided into a plurality to rapidly generate an electrostatic force without generating a voltage difference.
In particular, the conductor layer 230 may be additionally formed on the pair of support regions (a1, a2), and a DC power may be obtained by respective additional DC power sources or one DC power source.
Here, it is preferable that the DC power applied to the conductive layer 230 be independently controllable for each substrate 10.
Specifically, in the electrostatic chuck 200, the conductive layer 230 that generates an electrostatic force by applying a power source is formed separately or integrally with the pair of support regions a1 and a 2.
That is, the conductor layer 230 may be formed in a predetermined pattern on the first insulating layer 220 except for a portion opposite to the bottom groove 217.
Further, even if the supply of the electric heating gas is based on the above, the supply of the electric heating gas is separately controlled or integrally controlled in the pair of support regions a1 and a 2.
The first insulating layer 220, the conductor layer 230, and the second insulating layer 240 may be formed by various methods, for example, by plasma thermal spraying.
In addition, as shown in fig. 1 to 4, the electrostatic chuck 200 forms a step 202 at an edge so that the contour sealing member 250 can be stably disposed.
The outer-contour sealing member 250 is configured to protect a portion of the electrostatic chuck 200 exposed to the upper side from plasma in a state where the substrate holder 130, that is, the substrate 10 is mounted on the electrostatic chuck 200, and is preferably made of Al which is an insulating material strong against plasma2O3、ZrO3AlN and Y2O3And ceramic materials such as polycarbonate and polytetrafluoroethylene.
The contour sealing member 250 is formed of a plurality of members, and can be used for a large-sized electrostatic chuck 200, and can have the same structure as that disclosed in korean laid-open patent publication No. 10-2014-0060662.
As shown in fig. 2 and 3, a side sealing member 280 is additionally provided on a side surface of the base material 210 in order to prevent the electrostatic chuck 200, the cooling plate, and the like from being damaged by plasma.
The side sealing member 280 is provided on the side of the base member 210 to prevent the electrostatic chuck 200 from being exposed to the outside, and is preferably made of Al, which is an insulating material strong against plasma2O3、ZrO3AlN and Y2O3And ceramic materials such as polycarbonate and polytetrafluoroethylene.
The center seal member 270 may have a plurality of structures, such as a member connecting the outline seal member 250 between the two rectangular substrates 10, and may define a pair of support regions a1 and a2 for supporting the two rectangular substrates, respectively.
In particular, the central sealing member 270 is provided to define a pair of support regions a1 and a2 for supporting the two rectangular substrates, respectively, and is preferably formed of an insulating material Al having a strong ability to withstand plasma, in other words, a second insulating layer 240 for preventing the electrostatic chuck 200 from being exposed to plasma2O3、ZrO3AlN and Y2O3And ceramic materials such as polycarbonate and polytetrafluoroethylene.
The center seal member 270 is formed integrally with at least a part of the outer shell seal member 250.
Preferably, the center sealing member 270 overlaps at least a portion of the outer-shell sealing member 250 to prevent plasma from entering the electrostatic chuck 200 from a boundary with the outer-shell sealing member 250.
Preferably, the upper portion of the center sealing member 270 is formed to have the same height as or lower than the pedestal 242, so that the upper portion of the pedestal 242 can support the bottom surface of the substrate 10.
Preferably, the center seal member 270 is positioned between the bases 242 on the opposite inner surfaces of the rectangular substrate 10.
According to the additional arrangement of the central sealing member 270 having the above-described configuration, the substrate processing apparatus that performs processing before dividing into two substrates has an advantage in that the substrate processing apparatus that performs processing before dividing into two substrates can perform substrate processing on two straight quadrangular substrates 10 at a time by simply deforming (alternating electrostatic chucks).
The substrate processing apparatus is provided in the process chamber 100, and includes: the lift bar assembly includes a plurality of lift bars 310 to penetrate the substrate support frame 130 to be movable up and down.
The lift bar assembly is configured to vertically lift the substrate 10 by introducing and removing the substrate 10 by a transfer robot or the like, is installed in the process chamber 100, and includes a plurality of lift bars 310 to be vertically movable by penetrating the substrate support frame 130, and may have any configuration if the lift bars 310 can be vertically driven.
As an example, the lift bar assembly has the same or similar structure as that of Korean laid-open patent publication No. 10-2015-0114227 of the applicant.
In addition, according to the substrate processing apparatus of the present invention, the lift lever 310 is disposed to move each substrate up and down as the two substrates are introduced and the substrate processing is performed.
However, since a plurality of lift pins are disposed at the opposite edges in a state where two substrates are placed, there is interference between lift pins supporting the edges of adjacent substrates or between structures for driving the substrates up and down, and there is a limitation in approaching two substrates to each other.
Here, when the interval between two substrates is increased, the size of the process chamber 100 is also increased, which leads to an increase in manufacturing costs of the process chamber 100, and a problem in that the thickness of the process chamber 100 is increased in order to allow the process chamber to withstand a relatively increased volume of process pressure (predetermined vacuum pressure).
Therefore, the lift bar combination is necessary to minimize the spacing between the central lift bars that support the edges of the adjoining substrates.
Thus, preferably, the lifting bar assembly comprises: the central lift-up/down unit 300 is provided along the center of the substrate support frame 130, which is a boundary portion where the two rectangular substrates 10 face each other, and supports the bottom surfaces of the two rectangular substrates adjacent to each other by the lifting/lowering drive of a single drive source (not shown).
The driving source is configured to drive the pair of lifting rods 310 up and down using one driving source, and various configurations such as a belt, a pulley block, and a screw combination may be used according to a driving method.
In addition, the structure of the central lift rod lifter 300 may be used in various embodiments in order to minimize the space between the central lift rods 310 supporting the adjacent substrate edges.
Specifically, as a first embodiment, as shown in fig. 7, the center lifter lifting part 300 includes: the sealing member 360 includes a sealing tool 412 disposed in the through hole 119 formed in the process chamber 100, an elevating rod 330 penetrating the sealing member 360 and driven to be elevated by a driving source (not shown) coupled to one end thereof, and an elevating rod support portion 320 coupled to the other end of the elevating rod 330, and supporting the pair of central elevating rods 310 and the telescopic portion 340 at the upper portion thereof, and hermetically connecting the space between the sealing member 360 and the elevating rod support portion 320 to be vertically telescopic.
The sealing member 360 has a sealing tool 412 having a sealing means 412 and is disposed on the through hole 119 formed in the process chamber 100 to maintain the process pressure inside the process chamber 100, and the process chamber 100 is coupled to, for example, the bottom surface of the process chamber 100 having the through hole 119.
The elevating rod 330 may be constructed in various structures by penetrating the sealing member 360 and elevating and driving it by a driving source (not shown) coupled to one end thereof.
The lifting rod supporting part 320 is coupled to the other end of the lifting rod 330 and has a structure for simultaneously supporting the pair of central lifting rods 310 at the upper portion, and any structure may be used if it is a structure for simultaneously supporting the pair of central lifting rods 310.
Here, the pair of central lifting rods 310 can finely adjust the vertical height of the lifting rod support part 320.
The expansion part 340 is formed to be capable of expanding and contracting up and down while hermetically connecting a space between the sealing member 360 and the lift lever support part 320, and may have various structures.
The expansion/contraction part 340 is configured to isolate the outside air pressure state and the inside atmospheric pressure state of the expansion/contraction part 340, and may have any configuration if it is an expandable/contractible member such as a bellows whose length in the vertical direction is variable.
Further, the arrangement of the telescopic part 340 includes: a plurality of extensible members 341, 342 disposed up and down so that the up and down length can be changed, and an intermediate member 343 disposed between the plurality of extensible members 341, 342 and vertically connecting the extensible members 341, 342 positioned at the upper and lower sides to have a stable structure.
The telescopic members 341 and 342 are arranged in the vertical direction so that the vertical length thereof can be changed, and a bellows may be used.
The intermediate member 343 is provided between the plurality of extensible members 341, 342 and connects the extensible members 341, 342 located above and below from above and below, thereby preventing the extensible part 340 from being lengthened up and down and stably providing the extensible part 340.
As a second embodiment, as an example of the central lift lever elevating part 300 for finely adjusting the vertical height of the pair of central lift levers 310 on the lift lever supporting part 320, as shown in fig. 8a and 8b, there are included: a sealing member 360 having a sealing tool 412 and disposed on the through hole 119 formed in the process chamber 100; and a lifting rod 330 which passes through the sealing member 360 and is driven to lift by a driving source coupled to one end thereof; and a main support 321 coupled to the other end of the lifting rod 330; and a pair of lift lever support portions 320 movable in the up-down direction at the upper portion of the main support portion 321, and supporting the pair of central lift levers 310 at the upper portions, respectively; and a pair of height adjustment rods 375 coupled to the pair of lift rod support parts 320, respectively, penetrating the main support part 321 and the sealing member 360, and capable of moving up and down while protruding toward the lower side of the sealing member 360 to adjust the height of the pair of central lift rods 310, respectively; and a telescopic part 340 which can be coupled to a space between the sealing member 360 and the main support 321 in a sealing manner and can be vertically extended and contracted; and an auxiliary expansion part 372 which is connected to the space between the lifting rod support part 320 and the main support part 321 in a sealing manner and is expandable and contractible up and down.
The sealing member 360 has a sealing tool 412 having a sealing means 412 and is disposed on the through hole 119 formed in the process chamber 100 to maintain the process pressure inside the process chamber 100, and the process chamber 100 is coupled to the bottom surface of the process chamber 100 having the through hole 119, for example.
The elevating rod 330 may be configured to pass through the sealing member 360 and be driven to be elevated by a driving source (not shown) coupled to one end thereof.
The main support 321 may be coupled to the other end of the lift lever 330 and may have various structures such as a plate member.
The pair of lift lever support portions 320 are provided above the main support portion 321 to be vertically movable as a structure for supporting the pair of center lift levers 310 on the upper portions thereof, respectively, and may have any structure as long as they support the pair of center lift levers 310 on the upper portions thereof, respectively.
The pair of height adjustment rods 375 are coupled to the pair of central elevation rod support parts 320, respectively, penetrate the main support part 321 and the sealing member 360, are elevated, and protrude toward the lower side of the sealing member 360, and may have various structures.
Here, the height adjustment bars 375 respectively adjust the height of the pair of central lifting bars 310 through various methods and coupling structures.
For example, the height adjustment lever 375 is coupled to a nut portion (not shown) provided on the main support 321 by a screw, and moves up and down by rotation.
By rotating the height adjustment lever 375 having the above-described structure, the height adjustment lever 375 is vertically and finely movable with respect to the main support 321, and the vertical height of the pair of lift rods 310 can be finely adjusted to actively match the vertical height condition of each central lift rod 310, thereby configuring an optimal process environment.
As another example, as shown in fig. 8a and 8b, the height adjustment lever 375 is coupled to the fixing member 384 of the elevation bar 330 to be vertically movable and positionally adjustable, so that the vertical height of the center elevation bar 310 can be finely adjusted.
The fixing member 384 penetrates the elevating rod 330 through the main through hole 384b, and can be fixed to the elevating rod 330 by various methods such as a fixing pin 386.
The fixing member 384 is formed with a pair of auxiliary through holes 384a penetrating the height adjustment levers 375, and the height adjustment levers 375 are inserted into the auxiliary through holes 384a, respectively.
Here, the height adjustment lever 375 is formed with a bolt portion, and is screwed to the upper and lower portions of the fixing member 384, and the fixing member 384 is moved up and down and fixed in position by nuts 387, 388 provided at the upper and lower portions, respectively.
Here, when the user needs to finely move the height adjustment lever 375 up and down, the user rotates the nuts 387, 388 to finely move the height adjustment lever 375 up and down on the fixing member 384, and then tightens the nuts 387, 388 to fix the height adjustment lever 375 to the fixing member 384.
Preferably, the height adjustment lever 375 prevents the fixing member 384 from rotating, and the auxiliary through-hole 384a and the height adjustment lever 375 corresponding thereto have polygonal cross-sectional shapes.
Here, it is also possible to naturally deform a part of the cross-sectional shape of the height adjustment rod 375 for coupling with the nut and forming the nut portion.
The expansion part 340 is configured to hermetically connect the space between the sealing member 360 and the main support 321 to be expandable and contractible up and down, and may have various configurations.
The expansion/contraction part 340 is configured to isolate the outside process pressure state and the inside atmospheric pressure state of the expansion/contraction part 340, and may have any configuration if it is an expandable member such as a bellows whose length can be changed in the vertical direction.
Further, the arrangement of the telescopic part 340 includes: a plurality of extensible members 341, 342 arranged in an up-down direction so that the up-down length can be changed, and an intermediate member 343 provided between the plurality of extensible members 341, 342 and vertically connecting the extensible members 341, 342 positioned at the upper side and the lower side to have a stable structure.
The telescopic members 341 and 342 are arranged vertically so that the vertical length can be changed, and a bellows or the like can be used.
The intermediate member 343 is provided between the plurality of extensible members 341, 342 and connects the extensible members 341, 342 located above and below from above and below, thereby preventing the extensible part 340 from being lengthened from above and below, and enabling the extensible part 340 to be stably installed.
As a third embodiment, as shown in fig. 9, the central lifter lifting unit 300 includes: the sealing member 360 includes a sealing tool 412 disposed in a through hole 119 formed in the process chamber 100, a pair of lift rods 381 which penetrate the sealing member 360 and are driven to move up and down by a driving source (not shown) coupled to one end of the sealing member, a rod support portion 331 which supports one end of the pair of lift rods 381 protruding toward the lower side of the sealing member 360 and is driven to move up and down by the driving source, and a lift rod support portion 320 which is coupled to the other end of the pair of lift rods 381, supports the pair of central lift rods 310 and the extensible portion 340 at the upper portion thereof, and is capable of sealing a space between the sealing member 360 and the lift rod support portion 320 and extending and retracting up and down.
The sealing member 360 includes a sealing tool 412 provided in a through hole 119 formed in the process chamber 100, and the sealing tool 412 is similar to a gasket as a structure for maintaining the process pressure in the process chamber 100, and the process chamber 100 is coupled to, for example, the bottom surface of the process chamber 100 in which the through hole 119 is formed.
The elevating rod 381 may be constructed in various structures so as to penetrate the sealing member 360 and be driven to be elevated by a driving source (not shown) coupled to one end thereof.
In particular, the lift rod 381 differs from the first embodiment in the arrangement of two units, and is preferably arranged on the axis of the lift rod 310 so as to stably support the center lift rod 310.
The rod support 331 is configured to support one end of a pair of lift rods 381 protruding from the lower side of the sealing member 360 and to be driven to move up and down by a driving source, and may have various configurations such as a plate.
Here, as shown in the drawing, the lever support portion 331 is configured such that a drive support lever 333 driven up and down by a drive source is coupled to a lower portion thereof and can be driven up and down.
The lift lever support portion 320 is coupled to the other end of the lift lever 330 and supports the pair of central lift levers 310 at the upper portion thereof, and may have any configuration as long as it can support the pair of lift levers 310.
Here, the pair of central lift rods 310 can make fine adjustment of the vertical height of the lift rod support part 320.
The expansion part 340 may have various structures to expand and contract up and down by hermetically connecting a space between the sealing member 360 and the lift lever support part 320.
The expansion/contraction part 340 is configured to isolate the outside process pressure state and the inside atmospheric pressure state of the expansion/contraction part 340, and may have any configuration if it is an expandable member such as a bellows whose length is changeable in the up-down direction.
The arrangement of the telescopic part 340 includes: a plurality of telescopic members 341, 342 which are arranged in the vertical direction and whose vertical length can be changed, and an intermediate member 343 which is provided between the plurality of telescopic members 341, 342 and vertically connects the upper and lower telescopic members 341, 342.
The telescopic members 341 and 342 are vertically arranged and have a structure in which the vertical length can be changed, and a bellows or the like can be used.
The intermediate member 343 is provided between the plurality of extensible members 341, 342 to vertically connect the upper and lower extensible members 341, 342, and can be stably provided to the extensible part 340 in order to prevent the extensible part 340 from being vertically lengthened.
As a fourth embodiment, as shown in fig. 10, the center lifter lifting part 300 includes: a sealing member 360 having a sealing tool 412 and disposed on the through hole 119 formed in the process chamber 100; a pair of lift rods 381 which penetrate the sealing member 360 and are driven to move up and down by a driving source (not shown) coupled to one end thereof; and a rod support 331 for supporting one end of a pair of lift rods 381 protruding from the lower side of the sealing member 360 and driven to move up and down by a driving source; and a pair of lift lever support portions 322 coupled to the other ends of the pair of lift levers 381, respectively, and supporting the pair of central lift levers 310 at upper portions thereof, respectively; and a pair of extendable portions 340 which are vertically extendable and retractable while hermetically connecting the spaces between the sealing member 360 and the pair of lift lever support portions 322.
The sealing member 360 has a sealing tool 412, is disposed on the through hole 119 formed in the process chamber 100, and is configured to maintain the process pressure inside the process chamber 100, and has a sealing ring-like sealing tool 412, and the process chamber 100 is coupled to, for example, the bottom surface of the process chamber 100 where the through hole 119 is formed.
The elevating rod 381 penetrates the sealing member 360 and is driven to be elevated by a driving source (not shown) coupled to one end thereof, and may have various configurations.
In particular, the lift rods 381 are provided in a pair unit to support the pair of center lift rods 310, respectively, and preferably are provided on the axis of the center lift rods 310 in order to stably support the center lift rods 310.
The rod support 331 supports one end of a pair of lift rods 381 protruding from the lower side of the sealing member 360, and is configured to be driven to be lifted by a driving source.
Here, as shown in the drawing, the lever support portion 331 is coupled to a lower side of the driving support lever 333 which is driven up and down by the driving source, and can be driven up and down.
The lift lever support portions 322 are formed in a pair, are coupled to the other ends of the pair of lift levers 381, and support the pair of center lift levers 310 at the upper portions thereof.
Here, the pair of central elevation bars 310 can finely adjust the vertical height of the elevation bar supporting part 322.
The pair of expansion/contraction portions 340 may have various structures so as to expand and contract up and down while hermetically connecting the spaces between the sealing member 360 and the pair of lift lever support portions 322.
The expansion/contraction part 340 is a structure for isolating the outside process pressure state and the inside atmospheric pressure state of the expansion/contraction part 340, and may have any structure if it is an expandable member such as a bellows that is vertically changeable in length.
The arrangement of the extendable portion 340 includes, as described above: a plurality of telescopic parts which are configured along the vertical direction and can change the vertical length, and an intermediate part which is arranged between the plurality of telescopic parts and is connected with the telescopic parts at the upper side and the lower side up and down.
The telescopic member may be configured vertically and may have a variable vertical length, and a bellows may be used.
The intermediate member is provided between the plurality of extensible members and connects the extensible members located above and below the plurality of extensible members in the vertical direction, and the extensible member can be stably provided to prevent the extensible member from being excessively long in the vertical direction.
Preferably, the expansion/contraction part 340 includes a flange 348, which extends in a radial direction from a portion coupled to the sealing member 360.
However, the flange portion 348 of the expansion portion 340 interferes with the flange portion 348 of the adjacent expansion portion 340, and may prevent the gap between the pair of lift rods 310 from being minimized.
Thus, the flange portion 348 of the expansion/contraction portion 340 can be vertically overlapped with the flange portion 348 of the adjacent expansion/contraction portion 340.
The flange 348 of the expansion/contraction part 340 is provided on the upper part of the sealing member 360, and is coupled to the lower part of the sealing member 360, as a method of vertically overlapping the flange 348 of the adjacent expansion/contraction part 340.
Here, the flange portion 348 of the expansion and contraction portion 340 may be coupled by various methods such as thermal spraying with the sealing member 360 and close coupling in a state where a seal ring is superimposed.
The central lift bar elevating part 300 having the above-described structure can minimize the interval between the two substrates 10 depending on the driving structure for driving the pair of lift bars adjacent to the edge up and down among the lift bars for elevating the two substrates 10 according to the arrangement thereof.
However, the present invention is not limited to the above-described embodiments, and the technical ideas of the present invention and the basic technical ideas thereof described above are all required to be included in the scope of the present invention.
Claims (17)
1. A substrate processing apparatus, comprising:
a process chamber forming a processing space capable of performing substrate processing on the substrate in a rectangular shape before being divided into two pieces; and
a substrate support frame which is provided in the process chamber and includes a pair of support regions for supporting the two rectangular substrates formed by dividing the rectangular substrate before division into two pieces,
the substrate support stand includes:
an electrostatic chuck on which the substrate is mounted;
more than one outline sealing component, set up and can be dismantled along the edge of the said static suction disc; and
one or more central sealing members disposed on the upper portion of the electrostatic chuck between the two rectangular substrates, connecting the outline sealing members to define a pair of support regions for supporting the two rectangular substrates, respectively,
the electrostatic chuck includes:
a base metal made of a metal material;
a first insulating layer formed on the base material by thermal spraying;
an electric conductor layer formed on the first insulating layer and connected to a DC power source to apply a power source to generate an electrostatic force, an
A second insulating layer formed on the conductor layer by thermal spraying,
at least a part of upper surfaces of the center seal member and the outline seal member and edges of the two straight quadrangular substrates respectively placed on the pair of support regions overlap each other,
each of the support regions comprises:
a plurality of protrusions formed to protrude to fill an electric heating gas between the bottom of the substrate and the upper portion of the electrostatic chuck;
a susceptor supporting a bottom edge of the substrate to prevent the electric heating gas from leaking to the outside; and
a plurality of lift rods for lifting the substrate up and down to introduce or remove the substrate,
the central sealing part is positioned between the bases, and the bases correspond to the opposite inner side edges of the straight quadrangular substrate.
2. The substrate processing apparatus according to claim 1,
the base material is opposite to the central sealing part, and a bottom groove is formed on the upper part of the base material,
an insulating layer is formed on the surface of the bottom groove, and an insertion groove into which the central sealing member is inserted is finally formed.
3. The substrate processing apparatus according to claim 2,
the inner side surface of the bottom groove and the upper surface of the base material form an inclination, and the width decreases from the upper side to the lower side.
4. The substrate processing apparatus according to claim 3,
in an inclination angle formed by the upper portion of the base material and the inner side surface of the bottom groove, an obtuse angle is inversely proportional to the depth of the bottom groove.
5. The substrate processing apparatus according to claim 2,
the base material is made of aluminum or aluminum alloy, anodic oxidation treatment is carried out before the first insulating layer is formed, and the inner side surface of the bottom groove and the upper portion of the base material form a vertical structure.
6. The substrate processing apparatus according to claim 1,
the height of the upper portion of the central sealing member is the same as or lower than the height of the base.
7. The substrate processing apparatus according to claim 2,
the support regions independently control the supply of the electrically heated gas.
8. The substrate processing apparatus according to claim 2,
the central seal member is integrally formed with at least a portion of the contour seal member.
9. The substrate processing apparatus according to claim 2,
the central seal member and the outer contour seal member at least partially overlap each other.
10. The substrate processing apparatus according to claim 1,
the substrate processing apparatus further includes a lift bar assembly,
the lift bar assembly is provided in the process chamber, and includes the plurality of lift bars to penetrate the substrate support frame to move up and down,
the lift bar assembly further comprises:
and a central lift lever lifting part which is provided along a central part of the substrate support frame which is a boundary part where the two rectangular substrates face each other, and supports bottom surfaces of the two rectangular substrates adjacent to each other simultaneously by lifting and lowering driving of a single driving source.
11. The substrate processing apparatus according to claim 10,
the central lifter lifting portion includes:
a sealing member having a sealing tool provided on the through hole of the process chamber, and
a lifting rod penetrating the sealing member and driven to lift by the driving source coupled to one end, and
a lift rod support part coupled to the other end of the lift rod and simultaneously supporting a pair of central lift rods, an
And a telescopic part which hermetically connects the space between the sealing part and the lifting rod supporting part and can be vertically telescopic.
12. The substrate processing apparatus according to claim 10,
the central lifter lifting portion includes:
a sealing member having a sealing tool provided on the through hole of the process chamber, and
a lifting rod penetrating the sealing member and driven to lift by the driving source coupled to one end, and
a main supporting part combined at the other end of the lifting rod,
a pair of lift bar support parts provided on an upper part of the main support part and movable up and down, and supporting a pair of central lift bars on the upper part, respectively, an
A pair of height adjustment rods coupled to the pair of lift rod support parts, respectively, penetrating the main support part and the sealing member, protruding downward of the sealing member, and being lifted to adjust the height of the pair of central lift rods, respectively, and
a telescopic part hermetically connecting the space between the sealing member and the lift lever support part and being capable of being vertically telescopic, an
And an auxiliary telescopic part hermetically connecting the space between the lifting rod supporting part and the main supporting part and capable of vertically extending and retracting.
13. The substrate processing apparatus according to claim 10,
the central lifter includes:
a sealing member having a sealing tool and provided on the through hole of the process chamber, and
a pair of lift rods penetrating the sealing member and driven to move up and down by the driving source coupled to one end thereof, and
a rod support portion which supports one end of the pair of lift rods protruding to the lower side of the sealing member and is driven to lift by the driving source, and
a lift-rod support portion respectively coupled to the other ends of the pair of lift rods and simultaneously supporting the pair of central lift rods, an
And a telescopic part hermetically connecting the space between the sealing part and the lifting rod supporting part and capable of stretching up and down.
14. The substrate processing apparatus according to claim 10,
the central lifter lifting portion includes:
a sealing member having a sealing tool and provided on the through hole of the process chamber, and
a pair of lift rods penetrating the sealing member and driven to move up and down by the driving source coupled to one end thereof, and
a rod support portion which supports one ends of the pair of lift rods protruding toward the lower side of the sealing member and is driven to move up and down by the driving source, and
a pair of lift lever support portions coupled to the other ends of the pair of lift levers, respectively, and supporting a pair of central lift levers at upper portions thereof, respectively, an
And a pair of extendable portions which are vertically extendable and retractable and which hermetically connect the space between the sealing member and the lift bar support portion.
15. The substrate processing apparatus according to claim 14,
the pair of expansion portions includes:
flange portions radially extending from portions joined to the sealing member,
the flange part of the expansion part and the flange part of the adjacent expansion part are overlapped up and down.
16. The substrate processing apparatus according to any one of claims 11 to 15,
the expansion part includes:
a plurality of telescopic members arranged in the vertical direction so as to vary the vertical length, an
And an intermediate member disposed between the plurality of extensible members and vertically connecting the extensible members located at the upper side and the lower side.
17. The substrate processing apparatus according to any one of claims 11 and 13 to 15,
the pair of central lift rods are provided on the lift rod support portion with a finely adjustable vertical height.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210447474.5A CN114743921A (en) | 2017-03-23 | 2017-03-23 | Substrate support and substrate processing apparatus provided with the same |
| CN201710176677.4A CN108630590B (en) | 2017-03-23 | 2017-03-23 | Substrate support and substrate processing apparatus provided with the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710176677.4A CN108630590B (en) | 2017-03-23 | 2017-03-23 | Substrate support and substrate processing apparatus provided with the same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210447474.5A Division CN114743921A (en) | 2017-03-23 | 2017-03-23 | Substrate support and substrate processing apparatus provided with the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108630590A CN108630590A (en) | 2018-10-09 |
| CN108630590B true CN108630590B (en) | 2022-05-17 |
Family
ID=63707342
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710176677.4A Active CN108630590B (en) | 2017-03-23 | 2017-03-23 | Substrate support and substrate processing apparatus provided with the same |
| CN202210447474.5A Pending CN114743921A (en) | 2017-03-23 | 2017-03-23 | Substrate support and substrate processing apparatus provided with the same |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210447474.5A Pending CN114743921A (en) | 2017-03-23 | 2017-03-23 | Substrate support and substrate processing apparatus provided with the same |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN108630590B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101431041A (en) * | 2007-11-06 | 2009-05-13 | 东京毅力科创株式会社 | Carrying bench, processing device and processing system |
| KR20140060662A (en) * | 2012-11-12 | 2014-05-21 | 주식회사 원익아이피에스 | Electrostatic chuck, substrate processing apparatus, and method for manufacturing the same |
| KR20160091208A (en) * | 2015-01-22 | 2016-08-02 | 주식회사 원익아이피에스 | Aligning module |
| CN105917457A (en) * | 2014-01-22 | 2016-08-31 | 株式会社爱发科 | Plasma treatment device and wafer transportation tray |
| KR20160110862A (en) * | 2015-03-13 | 2016-09-22 | 주식회사 원익아이피에스 | Aligning module |
| KR20170019564A (en) * | 2015-08-11 | 2017-02-22 | 삼성디스플레이 주식회사 | Substrate processing system |
| CN106469667A (en) * | 2015-08-19 | 2017-03-01 | 芝浦机械电子株式会社 | Substrate board treatment and substrate processing method using same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9070760B2 (en) * | 2011-03-14 | 2015-06-30 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
-
2017
- 2017-03-23 CN CN201710176677.4A patent/CN108630590B/en active Active
- 2017-03-23 CN CN202210447474.5A patent/CN114743921A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101431041A (en) * | 2007-11-06 | 2009-05-13 | 东京毅力科创株式会社 | Carrying bench, processing device and processing system |
| KR20140060662A (en) * | 2012-11-12 | 2014-05-21 | 주식회사 원익아이피에스 | Electrostatic chuck, substrate processing apparatus, and method for manufacturing the same |
| CN105917457A (en) * | 2014-01-22 | 2016-08-31 | 株式会社爱发科 | Plasma treatment device and wafer transportation tray |
| KR20160091208A (en) * | 2015-01-22 | 2016-08-02 | 주식회사 원익아이피에스 | Aligning module |
| KR20160110862A (en) * | 2015-03-13 | 2016-09-22 | 주식회사 원익아이피에스 | Aligning module |
| KR20170019564A (en) * | 2015-08-11 | 2017-02-22 | 삼성디스플레이 주식회사 | Substrate processing system |
| CN106469667A (en) * | 2015-08-19 | 2017-03-01 | 芝浦机械电子株式会社 | Substrate board treatment and substrate processing method using same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114743921A (en) | 2022-07-12 |
| CN108630590A (en) | 2018-10-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20210002786A1 (en) | Apparatus and methods for alignment of a susceptor | |
| TWI695413B (en) | Apparatus for processing substrate and lifting solution for substrate edge ring of the apparatus | |
| KR102014279B1 (en) | Substrate process apparatus | |
| CN110473759B (en) | Stage and plasma processing apparatus | |
| US11004722B2 (en) | Lift pin assembly | |
| US8864936B2 (en) | Apparatus and method for processing substrate | |
| JP6888007B2 (en) | Wafer edge ring lifting solution | |
| KR102362059B1 (en) | Plasma processing apparatus | |
| JPH11233291A (en) | Plasma processing device | |
| JP2021141313A (en) | Substrate support base, plasma processing system, and method for attaching annular member | |
| KR101568735B1 (en) | Susceptor and substrate processing apparatus having the same | |
| CN108630590B (en) | Substrate support and substrate processing apparatus provided with the same | |
| KR20180069991A (en) | Separable wafer susceptor and semiconductor process chamber apparatus including the same | |
| US9243328B2 (en) | Susceptor with roll-formed surface and method for making same | |
| KR100970201B1 (en) | Vacuum Processing Apparatus | |
| CN102683258B (en) | Chuck structure and device for processing semiconductor substrate using the same | |
| KR102192024B1 (en) | Substrate supporting module and substrate processing apparatus having the same | |
| KR102102922B1 (en) | Substrate processing apparatus | |
| KR102473906B1 (en) | Substrate supporting module and substrate processing apparatus having the same | |
| US20230135026A1 (en) | Substrate processing apparatus | |
| JP6689965B2 (en) | Film forming mask and film forming apparatus | |
| KR102312330B1 (en) | Substrate supporting unit | |
| US20230207378A1 (en) | Lift pin assembly and substrate processing apparatus having same | |
| US20220064799A1 (en) | Vacuum processing apparatus | |
| KR20240041794A (en) | Shower head and substrate process apparatus including the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |