CN108630575A - 基板处理装置及基板处理方法 - Google Patents
基板处理装置及基板处理方法 Download PDFInfo
- Publication number
- CN108630575A CN108630575A CN201810186810.9A CN201810186810A CN108630575A CN 108630575 A CN108630575 A CN 108630575A CN 201810186810 A CN201810186810 A CN 201810186810A CN 108630575 A CN108630575 A CN 108630575A
- Authority
- CN
- China
- Prior art keywords
- metal film
- liquid
- substrate
- metal
- containing precious
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 144
- 238000003672 processing method Methods 0.000 title claims abstract description 19
- 239000010970 precious metal Substances 0.000 claims abstract description 136
- 229910052751 metal Inorganic materials 0.000 claims abstract description 121
- 239000002184 metal Substances 0.000 claims abstract description 121
- 239000007788 liquid Substances 0.000 claims abstract description 120
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 91
- 238000005530 etching Methods 0.000 claims abstract description 54
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000002105 nanoparticle Substances 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 239000003814 drug Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 239000011148 porous material Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 20
- 238000010586 diagram Methods 0.000 description 16
- 230000007246 mechanism Effects 0.000 description 16
- 238000005260 corrosion Methods 0.000 description 14
- 230000007797 corrosion Effects 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 230000003321 amplification Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 8
- 238000010276 construction Methods 0.000 description 8
- 238000003199 nucleic acid amplification method Methods 0.000 description 8
- 239000002585 base Substances 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- 238000003475 lamination Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 230000007723 transport mechanism Effects 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000003456 ion exchange resin Substances 0.000 description 2
- 229920003303 ion-exchange polymer Polymers 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000003755 preservative agent Substances 0.000 description 2
- 230000002335 preservative effect Effects 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229920001429 chelating resin Polymers 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 150000003673 urethanes Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017053310 | 2017-03-17 | ||
JP2017-053310 | 2017-03-17 | ||
JP2017-185305 | 2017-09-26 | ||
JP2017185305 | 2017-09-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108630575A true CN108630575A (zh) | 2018-10-09 |
CN108630575B CN108630575B (zh) | 2022-08-09 |
Family
ID=63706096
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810186810.9A Active CN108630575B (zh) | 2017-03-17 | 2018-03-07 | 基板处理装置及基板处理方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7020966B2 (zh) |
CN (1) | CN108630575B (zh) |
TW (1) | TWI671436B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020047617A (ja) | 2018-09-14 | 2020-03-26 | キオクシア株式会社 | 基板処理装置、半導体装置の製造方法、および被加工基板 |
JP7453874B2 (ja) | 2020-07-30 | 2024-03-21 | 芝浦メカトロニクス株式会社 | 基板処理方法、および基板処理装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060219662A1 (en) * | 2005-03-30 | 2006-10-05 | Fujitsu Limited | Fabrication process of semiconductor device and polishing method |
CN101159230A (zh) * | 2006-10-03 | 2008-04-09 | 松下电器产业株式会社 | 基板处理装置和基板处理方法 |
US20090107851A1 (en) * | 2007-10-10 | 2009-04-30 | Akira Kodera | Electrolytic polishing method of substrate |
TW201639022A (zh) * | 2009-12-15 | 2016-11-01 | 國立大學法人大阪大學 | 拋光裝置及拋光工具 |
CN106256016A (zh) * | 2014-04-18 | 2016-12-21 | 株式会社荏原制作所 | 基板处理装置、基板处理***及基板处理方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08162425A (ja) * | 1994-12-06 | 1996-06-21 | Mitsubishi Electric Corp | 半導体集積回路装置の製造方法および製造装置 |
JP3737787B2 (ja) * | 2002-07-16 | 2006-01-25 | 株式会社東芝 | 半導体装置の製造方法 |
JP2004319609A (ja) * | 2003-04-14 | 2004-11-11 | Fujitsu Ltd | 配線形成方法及び研磨パッド |
JP5364959B2 (ja) * | 2009-03-27 | 2013-12-11 | 国立大学法人大阪大学 | 研磨方法及び研磨装置 |
JP2015128161A (ja) * | 2014-12-25 | 2015-07-09 | 国立大学法人大阪大学 | 研磨方法 |
JP6328575B2 (ja) * | 2015-02-23 | 2018-05-23 | 東京エレクトロン株式会社 | 触媒層形成方法、触媒層形成システムおよび記憶媒体 |
-
2018
- 2018-03-07 TW TW107107560A patent/TWI671436B/zh active
- 2018-03-07 CN CN201810186810.9A patent/CN108630575B/zh active Active
- 2018-03-09 JP JP2018043388A patent/JP7020966B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060219662A1 (en) * | 2005-03-30 | 2006-10-05 | Fujitsu Limited | Fabrication process of semiconductor device and polishing method |
CN101159230A (zh) * | 2006-10-03 | 2008-04-09 | 松下电器产业株式会社 | 基板处理装置和基板处理方法 |
US20090107851A1 (en) * | 2007-10-10 | 2009-04-30 | Akira Kodera | Electrolytic polishing method of substrate |
TW201639022A (zh) * | 2009-12-15 | 2016-11-01 | 國立大學法人大阪大學 | 拋光裝置及拋光工具 |
CN106256016A (zh) * | 2014-04-18 | 2016-12-21 | 株式会社荏原制作所 | 基板处理装置、基板处理***及基板处理方法 |
Also Published As
Publication number | Publication date |
---|---|
CN108630575B (zh) | 2022-08-09 |
TW201842239A (zh) | 2018-12-01 |
JP2019054227A (ja) | 2019-04-04 |
TWI671436B (zh) | 2019-09-11 |
JP7020966B2 (ja) | 2022-02-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information |
Address after: Tokyo Applicant after: Kaixia Co.,Ltd. Address before: Tokyo Applicant before: TOSHIBA MEMORY Corp. Address after: Tokyo Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo Applicant before: Pangea Co.,Ltd. |
|
CB02 | Change of applicant information | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20220210 Address after: Tokyo Applicant after: Pangea Co.,Ltd. Address before: Tokyo Applicant before: TOSHIBA MEMORY Corp. |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant |