CN108630442A - A kind of preparation method of the enhanced ultracapacitors of C3N4 - Google Patents
A kind of preparation method of the enhanced ultracapacitors of C3N4 Download PDFInfo
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- CN108630442A CN108630442A CN201810397255.4A CN201810397255A CN108630442A CN 108630442 A CN108630442 A CN 108630442A CN 201810397255 A CN201810397255 A CN 201810397255A CN 108630442 A CN108630442 A CN 108630442A
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- pedot
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 14
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims abstract description 13
- 239000007772 electrode material Substances 0.000 claims abstract description 5
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000004146 energy storage Methods 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 5
- 239000004964 aerogel Substances 0.000 claims description 4
- 238000000502 dialysis Methods 0.000 claims description 4
- 238000004108 freeze drying Methods 0.000 claims description 4
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 3
- 239000004202 carbamide Substances 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000003125 aqueous solvent Substances 0.000 claims description 2
- 238000001354 calcination Methods 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 229920001467 poly(styrenesulfonates) Polymers 0.000 abstract description 11
- 239000000463 material Substances 0.000 abstract description 6
- 229960002796 polystyrene sulfonate Drugs 0.000 abstract description 4
- 239000011970 polystyrene sulfonate Substances 0.000 abstract description 4
- 239000003792 electrolyte Substances 0.000 abstract description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 abstract 1
- 230000007812 deficiency Effects 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- 241000446313 Lamella Species 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/24—Electrodes characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/48—Conductive polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
- H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
Abstract
The invention discloses a kind of preparation method of the enhanced ultracapacitors of C3N4, this method is prepared for the C3N4 of three-dimensional structure, and in this, as the electrode material of combination electrode, ultracapacitor is assembled into electrolyte, collector.This process employs the characteristics of three-dimensional C3N4 structural high specific surfaces product, increase fake capacitance material poly- 3, effective contact area of 4 ethene dioxythiophenes/poly styrene sulfonate (PEDOT), simultaneously, the low deficiency of C3N4 conductivity is made up using PEDOT, and then the specific capacitance value and cycle efficieny of ultracapacitor are improved, and preparation method is simple.
Description
Technical field
The present invention relates to a kind of preparation method of enhanced ultracapacitor, more particularly to the class graphite of a kind of three-dimensional structure
Alkene phase C3N4 (g-C3N4), the method to improve electrode material specific surface area and charge capacity.
Background technology
With environmental pollution getting worse, it is badly in need of a kind of cleaning and efficient energy source device replaces fossil fuel.And it is super
Capacitor has received widespread attention in recent years as a kind of novel energy storage device.Compared with traditional energy storage device,
It has higher power density and better cyclical stability.According to its in thermal energy storage process based on mechanism it is different, it is main
It is divided into electric double layer capacitance, faraday's capacitance and mixing capacitance.The energy storage pattern of wherein electric double layer capacitance depends primarily on electrolysis
Liquid ion belongs to simple physical mechanism in the adsorption process of electrode surface, storage energy number depend on electrode material
Selection, i.e., with the come-at-able high-specific surface area of electrolyte ion material.
In recent years, g-C3N4 is due to the specific surface area with atomic structure similar with graphene and superelevation, becoming
The research hotspot with materials science field is learned, especially there is excellent performance in photocatalysis field.Currently, the preparation about C3N4
Method mainly has high temperature and high pressure method, vapour deposition process, liquid electrodeposition method etc..But the g-C3N4 that these methods obtain is mainly two
Structure is tieed up, there are a large amount of defect states, the advantage of g-C3N4 high-specific surface areas not to give full play in preparation process.
Invention content
The object of the present invention is to provide a kind of preparation method of the enhanced ultracapacitors of C3N4, this method can prepare one kind
The enhanced ultracapacitors of C3N4.This method is a kind of preparation method of three-dimensional C3N4 structures, and is applied in super capacitor
Device achievees the purpose that increase specific surface area and charge capacity with three-dimensional structure.
The present invention includes the following steps：
1) C3N4 powder, is prepared：
The C3N4 that class graphene-structured is prepared with calcining urea method, adjusts g-C3N4 molecular structures size and microcosmic lamella
Structural thickness.
2) C3N4 aeroges, are prepared：
C3N4 is handled, KOH is added, C3N4 is allowed to become nano thread structure by nanometer chip architecture；It is removed using dialysis treatment
Extra hydroxide ion；It finally goes to remove water by freeze-drying, obtains three-dimensional C3N4 aerogel structures；
3) C3N4@PEDOT, are prepared：The three-dimensional aeroge of PSS：
Treated that C3N4 provides high specific surface area and three dimensional skeletal structure, PEDOT for step 2):PSS provides high counterfeit
Capacitance charge capacity, by C3N4 and PEDOT：PSS is mixed, and is removed aqueous solvent by freeze-drying, is obtained three-dimensional C3N4@
PEDOT：PSS aerogel structures.
4), by C3N4@PEDOT：PSS/ foamed nickel electrode materials progress tabletting, cutting, encapsulation prepare energy storage device
Electrode.
The beneficial effects of the invention are as follows：
Two-dimensional g-C3N4 is become three-dimensional structure by the present invention by processing, and this material has the specific surface area of bigger,
Higher charge capacity.With the enhanced C3N4 ultracapacitors that this material preparation goes out compared with conventional Super capacitor, have
Higher specific capacitance value, and cycle efficieny is more stable.With feature simple for process, easy to operate.Pure PEDOT is
119F/g；(PEDOT after mixing:G-C3N4 is 80:20) it is 180F/g.Improve 51.2%.
Specific implementation mode
The present invention includes the following steps
1) C3N4 powder, is prepared：
It weighs 20g urea to be placed in crucible, crucible is placed in Muffle furnace, temperature programming is set, with 10 DEG C per minute
Rate rise to 550 DEG C from room temperature, and maintain 2h at 550 DEG C, be cooled to room temperature.Obtain C3N4 powder.
2) three-dimensional C3N4 aeroges, are prepared：
The C3N4 powder of 500mg is added in the KOH of the 3M of 20ml, is heated to 60 DEG C of heating stirring 12h.After stirring
It two hours of liquid ultrasonic, is poured slowly into 3500 bag filter of molecular cut off, dialysis is until to neutrality.Finally it is being freeze-dried
It is freeze-dried in machine, obtains three-dimensional C3N4 aeroges.
3) C3N4@PEDOT are prepared：The three-dimensional aeroge of PSS
Measure the C3N4 solution of a concentration of 5mg/ml after 5ml dialysis and the PEDOT for measuring 10ml：PSS (poly- 3,4- ethylene
Dioxy thiophene/poly styrene sulfonate) (ALDRICH 1.0wt%in H2O it) is mixed evenly, after being ultrasonically treated 30 minutes.
It is freeze-dried in freeze drier, obtains C3N4@PEDOT：The three-dimensional aeroge of PSS.
4), the preparation of ultracapacitor：
Tabletting cutting is carried out to C3N4/ foam nickel electrodes, electrode is made.
Explanation of nouns：
C3N4 is the molecular formula of this material, and g-C3N4 refers to the C3N4 for having graphene-structured.
PEDOT Chinese is：Poly- 3,4-rthylene dioxythiophene.
PSS Chinese is：Poly styrene sulfonate
PEDOT:PSS Chinese is：Poly- 3,4-rthylene dioxythiophene/poly styrene sulfonate.
C3N4@PEDOT："@" Chinese in PSS is the mixed meaning.
Claims (1)
1. a kind of preparation of the enhanced ultracapacitors of C3N4, this approach includes the following steps：
1) C3N4 powder is prepared：
The C3N4 that class graphene-structured is prepared with calcining urea method, adjusts g-C3N4 molecular structures size and Micro-sheet Structure
Thickness；
2) C3N4 aeroges are prepared：
C3N4 is handled, KOH is added, C3N4 is allowed to become nano thread structure by nanometer chip architecture；It is extra to be removed using dialysis treatment
Hydroxide ion；It finally goes to remove water by freeze-drying, obtains three-dimensional C3N4 aerogel structures；
3) C3N4@PEDOT are prepared：The three-dimensional aeroge of PSS：
Treated that C3N4 provides high specific surface area and three dimensional skeletal structure, PEDOT for step 2):PSS provides high fake capacitance
Charge capacity, by C3N4 and PEDOT：PSS is mixed, and is removed aqueous solvent by freeze-drying, is obtained three-dimensional C3N4@PEDOT：
PSS aerogel structures；
4) by C3N4@PEDOT：PSS/ foamed nickel electrode materials progress tabletting, cutting, encapsulation prepare energy storage device electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810397255.4A CN108630442B (en) | 2018-04-28 | 2018-04-28 | A kind of preparation method of the enhanced supercapacitor of C3N4 |
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|---|---|---|---|
| CN201810397255.4A CN108630442B (en) | 2018-04-28 | 2018-04-28 | A kind of preparation method of the enhanced supercapacitor of C3N4 |
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| Publication Number | Publication Date |
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| CN108630442A true CN108630442A (en) | 2018-10-09 |
| CN108630442B CN108630442B (en) | 2019-09-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111628092A (en) * | 2019-02-28 | 2020-09-04 | Tcl集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
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