CN108615781A - A kind of novel electron ballistic device - Google Patents
A kind of novel electron ballistic device Download PDFInfo
- Publication number
- CN108615781A CN108615781A CN201810231954.1A CN201810231954A CN108615781A CN 108615781 A CN108615781 A CN 108615781A CN 201810231954 A CN201810231954 A CN 201810231954A CN 108615781 A CN108615781 A CN 108615781A
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- Prior art keywords
- electrode
- electron
- extended
- emission source
- basal substrate
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- 239000000463 material Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000002708 enhancing effect Effects 0.000 claims abstract description 8
- 238000002161 passivation Methods 0.000 claims abstract description 4
- 230000006798 recombination Effects 0.000 claims abstract description 4
- 238000005215 recombination Methods 0.000 claims abstract description 4
- 239000013078 crystal Substances 0.000 claims description 9
- 230000005684 electric field Effects 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000001228 spectrum Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000011982 device technology Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the Schottky type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The present invention relates to a kind of novel electron ballistic devices, including basal substrate, first electrode, second electrode and electron emission source comprising be arranged on basal substrate surface and the first main electrode portion extended with predetermined direction and the first auxiliary electrode extended from the first main electrode portion；It is arranged on basal substrate surface and is isolated with the first electrode and the second main electrode portion extended with predetermined direction and the second auxiliary electrode extended from the second main electrode portion；And it is arranged at least one of first and second electrode electrode, and enhancing structure is additionally provided between the electron emission source and electrode, the enhancing structure includes successively from top to bottom：First including transparent conducting oxide layer, the back surface field passivation layer for reducing Carrier recombination, the second including transparent conducting oxide layer and highly conductive high adiabatic semiconductor material layer.The design has the advantages that simple in structure, easily fabricated and practicality and high efficiency.
Description
Technical field
The present invention relates to technical field of electronic equipment, are specifically related to a kind of novel electron ballistic device.
Background technology
Currently, in conventional photovoltaic battery device caused by absorbed layer materials band structure and solar spectrum mismatch
Energy loss accounts for about the 50% of overall spectrum energy, this partition losses energy is final mostly to dissipate in the form of heat.Spectral photovoltaic
The technologies such as battery, multijunction solar cell reduce this damage by improving the matching degree of absorbed layer band structure and solar spectrum
Consumption.But spectral photovoltaic cell multiple batteries cost is high and device design and craft is difficult, it is difficult to be widely applied.In recent years
The hot carrier battery put forward inhibits lattice thermal losses, can theoretically reach close to more by quickly collecting hot carrier
The high efficiency of junction battery.Its advantage is that two terminal device is simple in structure, without optical electivity, but difficult point is the heat to nonequilibrium state
Carrier is collected.Hot carrier and the thermally equilibrated rate of lattice are high, therefore the requirement to material is very high, realize difficulty
It is too big.
Invention content
The present invention by being inserted into highly conductive high adiabatic semi-conducting material " phonon glasses/electronics crystalline substance between two electrodes
Body " PGEC thermoelectric materials carry out while realizing the transmission of the high temperature difference and charge of cathode and anode, avoid above-mentioned based on vacuum gap
The drawbacks of PETE devices of layer, space charge effect is eliminated, device technology difficulty and the dependence to material work functions are reduced
Property, increase device efficiency room for promotion；A kind of novel electron ballistic device is provided.
In order to solve the above technical problems, the present invention provides a kind of novel electron ballistic devices, including
Basal substrate；
First electrode comprising be arranged on basal substrate surface and the first main electrode portion for being extended with predetermined direction and
The first auxiliary electrode extended from the first main electrode portion；
Second electrode is arranged on basal substrate surface and is isolated with the first electrode and is extended with predetermined direction
The second main electrode portion and the second auxiliary electrode for extending from the second main electrode portion；And
Electron emission source is arranged at least one of first and second electrode electrode, electronics hair
It penetrates and is additionally provided with enhancing structure between source and electrode, the enhancing structure includes successively from top to bottom：First electrically conducting transparent oxygen
Compound layer, the back surface field passivation layer for reducing Carrier recombination, the second including transparent conducting oxide layer and highly conductive high thermal insulation
Semiconductor material layer.
Further：The highly conductive high adiabatic semiconductor material layer is " phonon glasses/electron crystal ", such material is brilliant
There are three types of different crystallographic sites, the atom of two of which position to form basic crystal structure for tool in body structure, and leading
Band structure, and the third atom then be located at first two atomic building caged clearance position, and with neighboring atom weak binding.
Further：First and second auxiliary electrode is respectively arranged at least part of the first and second electrodes
On, and stop the influence of electric field between the first and second electrode of external electrical field pair.
Further：The end of the electron emission source on an electrode in first and second electrode and institute
State between another electrode in the first and second electrodes or with face and be isolated with the electron emission source another
The distance between electron radiation source is in the range of 1.2 nanometers to 0.05 micron.
With the above structure, the present invention by being inserted into highly conductive high adiabatic semi-conducting material " sound between two electrodes
Sub- glass/electron crystal " PGEC thermoelectric materials carry out while realizing the transmission of the high temperature difference and charge of cathode and anode, avoid above-mentioned
The drawbacks of PETE devices based on vacuum space gap layer, space charge effect is eliminated, reduces device technology difficulty and to material
The dependence of work function increases device efficiency room for promotion.
Description of the drawings
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
Fig. 1 is the structural diagram of the present invention.
Specific implementation mode
A kind of novel electron ballistic device as shown in Figure 1, including basal substrate, first electrode, second electrode and electronics
Emission source comprising be arranged on basal substrate surface and the first main electrode portion for being extended with predetermined direction and from the first main electricity
The first auxiliary electrode that pole part is extended；It is arranged on basal substrate surface and is isolated with the first electrode and with predetermined
The second main electrode portion that direction extends and the second auxiliary electrode extended from the second main electrode portion；And it is arranged in institute
It states at least one of the first and second electrodes electrode, enhancing knot is additionally provided between the electron emission source and electrode
Structure, the enhancing structure include successively from top to bottom：First including transparent conducting oxide layer 501, for reducing Carrier recombination
Back surface field passivation layer 502, the second including transparent conducting oxide layer 503 and highly conductive high adiabatic semiconductor material layer 504.Originally it sets
Meter has the advantages that simple in structure, easily fabricated and practicality and high efficiency.
Above-mentioned highly conductive high adiabatic semiconductor material layer is " phonon glasses/electron crystal ", such material crystal structure
There are three types of different crystallographic sites, the atoms of two of which position to form basic crystal structure, and leading energy band knot for middle tool
Structure, and the third atom then be located at first two atomic building caged clearance position, and with neighboring atom weak binding.
Above-mentioned first and second auxiliary electrode is respectively arranged at least part of the first and second electrodes, and is stopped outer
The influence of electric field between the first and second electrode of boundary's electric field pair.
The end of the electron emission source on an electrode in above-mentioned first and second electrode with described first and
Between another electrode in second electrode or with another electron radiation for facing and being isolated with the electron emission source
The distance between source is in the range of 1.2 nanometers to 0.05 micron.
Claims (4)
1. a kind of novel electron ballistic device, it is characterised in that：Including
Basal substrate；
First electrode comprising be arranged on basal substrate surface and the first main electrode portion for being extended with predetermined direction and from
The first auxiliary electrode that one main electrode portion extends；
Second electrode, for being arranged on basal substrate surface and being isolated with the first electrode and being extended with predetermined direction
Two main electrode portions and the second auxiliary electrode extended from the second main electrode portion；And
Electron emission source is arranged at least one of first and second electrode electrode, the electron emission source
Enhancing structure is additionally provided between electrode, the enhancing structure includes successively from top to bottom：First transparent conductive oxide
Layer, the back surface field passivation layer for reducing Carrier recombination, the second including transparent conducting oxide layer and highly conductive high thermal insulation are partly led
Body material layer.
2. a kind of novel electron ballistic device according to claim 1, it is characterised in that：Described is highly conductive high by adiabatic half
Conductor material layer is " phonon glasses/electron crystal ", is had in such material crystal structure there are three types of different crystallographic sites,
In the atoms of two kinds of positions form basic crystal structure, and leading band structure, and to be then located at first two former for the third atom
Son constitute caged clearance position, and with neighboring atom weak binding.
3. a kind of novel electron ballistic device according to claim 1, it is characterised in that：The first and second auxiliary electricity
It is extremely respectively arranged at least part of the first and second electrodes, and stops electricity between the first and second electrode of external electrical field pair
The influence of field.
4. a kind of novel electron ballistic device according to claim 1, it is characterised in that：Described described first and second
Between another electrode in the end and first and second electrode of the electron emission source on an electrode in electrode or
The distance between person and another electron radiation source for facing and being isolated with the electron emission source are micro- at 1.2 nanometers to 0.05
In the range of rice.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810231954.1A CN108615781A (en) | 2018-03-20 | 2018-03-20 | A kind of novel electron ballistic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810231954.1A CN108615781A (en) | 2018-03-20 | 2018-03-20 | A kind of novel electron ballistic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108615781A true CN108615781A (en) | 2018-10-02 |
Family
ID=63659000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810231954.1A Pending CN108615781A (en) | 2018-03-20 | 2018-03-20 | A kind of novel electron ballistic device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108615781A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5982091A (en) * | 1994-12-28 | 1999-11-09 | Sony Corporation | Flat display apparatus |
| CN101211729A (en) * | 2005-12-29 | 2008-07-02 | 三星Sdi株式会社 | Electron emission device and method for driving same |
| CN104659137A (en) * | 2014-12-22 | 2015-05-27 | 电子科技大学 | Full-solid photon enhanced thermionic emission device |
| CN105590999A (en) * | 2010-06-18 | 2016-05-18 | 传感器电子技术股份有限公司 | Deep ultraviolet light emitting diode |
-
2018
- 2018-03-20 CN CN201810231954.1A patent/CN108615781A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5982091A (en) * | 1994-12-28 | 1999-11-09 | Sony Corporation | Flat display apparatus |
| CN101211729A (en) * | 2005-12-29 | 2008-07-02 | 三星Sdi株式会社 | Electron emission device and method for driving same |
| CN105590999A (en) * | 2010-06-18 | 2016-05-18 | 传感器电子技术股份有限公司 | Deep ultraviolet light emitting diode |
| CN104659137A (en) * | 2014-12-22 | 2015-05-27 | 电子科技大学 | Full-solid photon enhanced thermionic emission device |
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| PB01 | Publication | ||
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181002 |