CN108615699A - A kind of wafer alignment system and method and the optical imaging device for wafer alignment - Google Patents

A kind of wafer alignment system and method and the optical imaging device for wafer alignment Download PDF

Info

Publication number
CN108615699A
CN108615699A CN201810533919.5A CN201810533919A CN108615699A CN 108615699 A CN108615699 A CN 108615699A CN 201810533919 A CN201810533919 A CN 201810533919A CN 108615699 A CN108615699 A CN 108615699A
Authority
CN
China
Prior art keywords
wafer
light
image
visual field
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201810533919.5A
Other languages
Chinese (zh)
Other versions
CN108615699B (en
Inventor
张振久
刘明俊
肖海兵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Institute of Information Technology
Original Assignee
Shenzhen Institute of Information Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Institute of Information Technology filed Critical Shenzhen Institute of Information Technology
Priority to CN201810533919.5A priority Critical patent/CN108615699B/en
Publication of CN108615699A publication Critical patent/CN108615699A/en
Application granted granted Critical
Publication of CN108615699B publication Critical patent/CN108615699B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A kind of wafer alignment system and method and the optical imaging device for wafer alignment, due to first obtaining the general image of wafer, calculate the regulated value of motion platform, initial adjustment is carried out to the position of wafer according to regulated value, the edge of wafer is made to be located on the position that can be fine-tuned according to the edge image of wafer.In the edge image for obtaining wafer, according to the edge image of wafer, then the regulated value of moving platform is calculated, wafer position is fine-tuned according to regulated value, and then completes wafer alignment.So that not needing continuous rotation wafer-supporting platform when being aligned to wafer to obtain crystal round fringes image, and wafer-supporting platform need not be replaced after being aligned, improve the efficiency of wafer alignment.

Description

A kind of wafer alignment system and method and the optical imaging device for wafer alignment
Technical field
The present invention relates to semiconductor detection technique fields, and in particular to a kind of wafer alignment system and method and is used for wafer The optical imaging device of alignment.
Background technology
In the prior art, wafer prealigning scheme mainly uses edge detecting sensor (laser sensor or image biography Sensor) coordinate the method for turntable rotation to obtain the marginal information of wafer, mechanical movement stage correction wafer pose is then utilized, Realize wafer prealigning.Using the method for laser sensor, as shown in Figure 1, servo motor driving wafer wafer-supporting platform rotation, utilizes Optical sensor system (light source+photosensitive sensor) can acquire edge location data, and wafer rotates after a week, and data have acquired Finish, wafer crystal circle center's coordinate and drift angle are obtained using mathematical algorithm, then utilizes the mechanism system of wafer-supporting platform to correct brilliant Circle pose.The wafer-supporting platform for the optical sensor system that this pre-alignment method uses is necessarily less than wafer, therefore enters downstream process When need to replace wafer-supporting platform with manipulator, and must rotate one week during the prealignment of wafer or mostly all, efficiency compared with It is low.
Invention content
The application provides a kind of wafer alignment system and method and the optical imaging device for wafer alignment, first obtains brilliant After round general image, the regulated value of motion platform is calculated, initial adjustment is carried out to the position of wafer according to regulated value, makes wafer Edge is located on the position that can be fine-tuned according to the edge image of wafer.In the edge image for obtaining wafer, according to brilliant Round edge image, then the regulated value of moving platform is calculated, wafer position is fine-tuned according to regulated value, and then completes Wafer prealigning.Since wafer-supporting platform need not be replaced, and wafer-supporting platform continuous rotation is not needed, solves wafer calibration in the prior art The low problem of efficiency.
According in a first aspect, provide a kind of wafer alignment system in a kind of embodiment, including:
Motion platform in X-axis and Y-axis movement and can turn about the Z axis;
Wafer wafer-supporting platform is supported on the motion platform, for carrying wafer;
Image acquiring device is set to above the wafer wafer-supporting platform, the general image and wafer for obtaining wafer Edge image;
Processor is coupled with described image acquisition device and the motion platform, for the overall diagram to the wafer As being handled, and calculate the first regulated value that the motion platform is moved in X-axis and Y-axis and first jiao turned about the Z axis Degree, and first regulated value and the first angle are sent to the motion platform, it is moved with controlling the motion platform;
The processor is additionally operable to handle the edge image of the wafer, and calculates the motion platform in X Axis and the second regulated value of Y-axis movement and the second angle turned about the Z axis, second regulated value and the second angle are sent out The motion platform is given, is moved with controlling the motion platform.
Further, described image acquisition device includes:
First sensor, the general image for obtaining the wafer;
Second sensor, the edge image for obtaining the wafer;
The first sensor and the second sensor are coupled with the processor respectively, are used for the whole of the wafer The edge image of body image and the wafer is sent to the processor.
Further, the sensor includes ccd image sensor and analog-digital converter;
The ccd image sensor is sent to the analog-digital converter for obtaining light and being converted into analog signal;
The analog-digital converter is used to convert the analog signal that the ccd image sensor received is sent to digital letter Number it is sent to the processor.
Further, described image acquisition device further includes optical imaging device;
The optical imaging device is used to obtain the light of the light and the second visual field of the first visual field, by first visual field Light project on the first sensor, to obtain the general image of the wafer;
The light of second visual field is projected in the second sensor, to obtain the edge image of the wafer.
Further, the optical imaging device includes objective lens, spectroscope and the first lens;
The objective lens focus to the light of first visual field, are reached to the light of defocused first visual field The spectroscope;
Light of the spectroscope reflection to defocused first visual field;
The light of first visual field after the first lens Transflective, the light of first visual field transmitted It reaches on the first sensor.
Further, the optical imaging device includes objective lens, the second lens, galvanometer and spectroscope;
The objective lens focus to second visual field, and described the is reached to the light of defocused second visual field Two lens;
Light of the second lens transmission to defocused second visual field;
The light for second visual field that second lens described in the vibration mirror reflected transmit;
Second lens transmit the light of second visual field of the vibration mirror reflected;
The light that the spectroscope reflects second visual field of the vibration mirror reflected of the second lens transmission reaches In the second sensor.
Further, the optical imaging device further includes biaxial MEMS, is used for the reflection angle by adjusting the galvanometer, The second sensor is set to obtain the light of second visual field corresponding with the angle of reflection.
According to second aspect, a kind of optical imaging device for wafer alignment, including object lens are provided in a kind of embodiment Group, the third lens, galvanometer, the 4th lens and spectroscope;
It is transmitted after the light of the objective lens focusing visual field;
The light that the spectroscope is transmitted from the objective lens separates the first light and the second light;
First light is the light that the spectroscope reflects the visual field transmitted after the objective lens focus, described Second light is the light that the spectroscope transmits the visual field transmitted after the objective lens focus;
The third lens transmit first light, and first light is received for 3rd sensor;
4th lens transmit second light;
Second light that 4th lens described in the vibration mirror reflected transmit;
4th lens are additionally operable to transmit second light that the 4th lens described in the vibration mirror reflected transmit;
The spectroscope is additionally operable to reflect second light of the vibration mirror reflected of the 4th lens transmission, is used for 4th sensor receives second light.
Further, the optical imaging device further includes biaxial MEMS, the reflection angle for adjusting the galvanometer.
According to the third aspect, a kind of wafer alignment method is provided in a kind of embodiment, including:
Obtain the image of the wafer entirety;
The general image of the general image of the wafer and the wafer to prestore is compared, is calculated according to comparison result The third regulated value and the third angle turned about the Z axis that the motion platform is moved in X-axis and Y-axis;
The position of the wafer is corrected according to the third regulated value and the third angle angle value;
Obtain the image of the crystal round fringes;
The edge image of the edge image of the wafer and the wafer to prestore is compared, according to comparison result meter Calculate the 4th regulated value that the motion platform is moved in X-axis and Y-axis and the fourth angle turned about the Z axis;
The position of the wafer is corrected according to the 4th regulated value and the fourth angle.
According to a kind of wafer alignment system and method for above-described embodiment and the optical imaging device for wafer alignment, by In the general image for first obtaining wafer, the regulated value of motion platform is calculated, initial adjustment is carried out to the position of wafer according to regulated value, The edge of wafer is set to be located on the position that can be fine-tuned according to the edge image of wafer.In the edge graph for obtaining wafer Picture according to the edge image of wafer, then calculates the regulated value of moving platform, is finely adjusted to wafer position according to regulated value Section, and then complete wafer prealigning.So that wafer-supporting platform need not be replaced after carrying out prealignment to wafer and to improve wafer pre- The efficiency of alignment.
Description of the drawings
Fig. 1 is the operating diagram of edge detecting sensor in the prior art;
Fig. 2 is a kind of structural schematic diagram of the wafer alignment system of embodiment;
Fig. 3 is a kind of image acquiring device structural schematic diagram of embodiment;
Fig. 4 is the coordinate system structure schematic diagram that regulated value is calculated for wafer alignment;
Fig. 5 is the coordinate system schematic diagram that circle fitting algorithm calculates wafer regulated value;
Fig. 6 is the coordinate system schematic diagram that wafer trimming point detects and angular adjustment value calculates;
Fig. 7 is the coordinate system schematic diagram of wafer angle regulated value;
Fig. 8 is the wafer alignment method flow diagram of another embodiment.
Specific implementation mode
Below by specific implementation mode combination attached drawing, invention is further described in detail.Wherein different embodiments Middle similar component uses associated similar element numbers.In the following embodiments, many datail descriptions be in order to The application is better understood.However, those skilled in the art can be without lifting an eyebrow recognize, which part feature It is dispensed, or can be substituted by other elements, material, method in varied situations.In some cases, this Shen Please it is relevant some operation there is no in the description show or describe, this is the core in order to avoid the application by mistake More descriptions are flooded, and to those skilled in the art, these relevant operations, which are described in detail, not to be necessary, they It can completely understand relevant operation according to the general technology knowledge of description and this field in specification.
It is formed respectively in addition, feature described in this description, operation or feature can combine in any suitable way Kind embodiment.Meanwhile each step in method description or action can also can be aobvious and easy according to those skilled in the art institute The mode carry out sequence exchange or adjustment seen.Therefore, the various sequences in the description and the appended drawings are intended merely to clearly describe a certain A embodiment is not meant to be necessary sequence, and wherein some sequentially must comply with unless otherwise indicated.
It is herein component institute serialization number itself, such as " first ", " second " etc., is only used for distinguishing described object, Without any sequence or art-recognized meanings.And " connection ", " connection " described in the application, unless otherwise instructed, include directly and It is indirectly connected with (connection).
Wafer alignment system and method, which are directed to, has pattern wafer and pattern-free wafer different.For figuratum crystalline substance Circle, is directly realized by wafer alignment.Detailed process is as follows:
(a), when establishing Recipe, the characteristic pattern of a high uniqueness repeated is acquired along some street Picture, record two or more include the coordinate position of this feature image, and later all wafers using the Recipe are sat with these Error concealment is carried out on the basis of cursor position;
(b), when Recipe is run, wafer is placed on the loading sucker of motion platform and after stablizing by manipulator, will be transported Moving platform acquires image after being moved to first coordinate position of record, then using the characteristic image of storage and collected figure As being matched, if successful match, the pixel deviations of characteristic image in the target image are exactly the wafer of first coordinate points Transmit error;
(c), the spiral moving movement platform centered on current coordinate position is needed if matching is unsuccessful, often moved Motion platform just acquires an image, and characteristic image is matched with the image collected, until successful match or super Cross restriction number;
(d) (b) and (c) step are repeated since second coordinate points up to the coordinate position of all records obtains respectively Transmission error;
(e) go out the transmission error of whole wafer, including translation transmission error and rotation according to the transmission error calculation of all the points Turn transmission error.
Wafer is generally passed through since inside can be extracted without any characteristic image for the wafer of pattern-free Edge feature is aligned.Detailed process is as follows:
(a), it when calibrating pattern-free wafer alignment, needs first to carry out Edge Gradient Feature to pattern-free wafer, in nothing 4 or more edge feature image of the edge collecting of pattern wafer including two Notch (hereinafter referred to as locating notch) And record its acquisition position;
(b), when Recipe is run, wafer is placed on the loading sucker of motion platform by manipulator.
(c), after waiting for motion platform to stablize, motion platform is moved to acquisition figure after first coordinate position of record Picture is then matched using the character pair image of storage with the image collected, and characteristic image is obtained after successful match and is existed Pixel deviations in target image;
(d), the spiral moving movement platform centered on current coordinate position is needed if matching is unsuccessful, often moved Motion platform just acquires an image, and characteristic image is matched with the image collected, until successful match or super Cross restriction number;
(e), (c) and (d) is repeated since second point up to the coordinate of all records obtains respective pixel deviations;
(f), the real coordinate position that there emerged a edge feature is calculated according to the pixel deviations of all the points, and according to these coordinates Position is fitted circumference.The center of circle is the translational error of wafer, and the center of circle and the midpoint of two locating notch position lines can calculate rotation Turn transmission error.
For there is pattern wafer, due to especially high to positioning accuracy request, the used general resolution ratio of camera and Multiplying power is relatively high, and corresponding visual field also can be smaller.When wafer transfer error is larger, characteristic image is just easy to out visual field, such as There is such case it is necessary to the spiral lookup target image centered on the coordinate position that expected characteristic image occurs in fruit, and repeatedly moves Dynamic motion platform, repeatedly carries out images match, takes very much, when wafer transfer error is especially big it is also possible to there is wafer pair The case where quasi- failure.And for the alignment of pattern-free wafer, because same high-resolution with there is pattern wafer to be similarly used The camera of small field of view, so also will appear characteristic image goes out the problem of visual field needs spiral to search.In addition to this, due to pattern-free The characteristic image of wafer is distributed on the edge circumference of wafer, and the point for alignment is more, is conducive to more being uniformly distributed Error information is more accurately transmitted in acquisition, therefore continually moving movement platform is needed when to pattern-free wafer alignment, frequently Ground carries out images match, takes very much.In addition, it is upper generally to utilize ccd image sensor to replace using the scheme of imaging sensor State the optical sensor system in scheme.In order to ensure the high-resolution of crystal round fringes image or use ultrahigh resolution phase Machine testing wafer global image, cost is very high or wafer-supporting platform is still needed to rotate a circle or mostly all, uses low resolution Phase machine testing crystal round fringes image, but prealignment efficiency is reduced.
MEMS, that is, microelectromechanical systems is the abbreviation of English Micro Electro Mechanical systems.
In embodiments of the present invention, the general image of wafer and the edge image of wafer are obtained, according to the wafer figure obtained As being compared with pre-stored wafer image, the regulated value of moving platform is calculated, wafer position is carried out according to regulated value It adjusts, and then completes wafer prealigning.
Embodiment one:
Referring to FIG. 2, being a kind of structural schematic diagram of the wafer alignment system of embodiment, this application discloses a kind of wafers Include motion platform 1, wafer wafer-supporting platform 2, image acquiring device 3 and processor 4 to Barebone.Motion platform 1 can be in X-axis and Y Axis is mobile and turns about the Z axis.Wafer wafer-supporting platform 2 is supported on motion platform 1, for carrying wafer 5.Image acquiring device 3, It is set to the top of wafer wafer-supporting platform 2, the edge image of general image and wafer for obtaining wafer.Processor 4 and image Acquisition device 3 and motion platform 1 couple, and for handling the general image of wafer, and calculate motion platform 1 in X-axis The first regulated value moved with Y-axis and the first angle turned about the Z axis, and the first regulated value and first angle are sent to movement Platform 1 is moved with controlled motion platform 1, and then realizes the adjustment to the position of wafer 5.Processor 4 is additionally operable to the one of wafer Serial edge image is handled, and is calculated the second regulated value that motion platform 1 is moved in X-axis and Y-axis and turned about the Z axis Second regulated value and second angle are sent to motion platform 1 by second angle, to control the movement of the motion platform 1, Jin Ershi Now to the adjusting of the position of wafer 5.
Wherein, as shown in figure 3, being a kind of image acquiring device structural schematic diagram of embodiment.Image is obtained as obtaining dress It includes optical imaging device 31, first sensor 32 and second sensor 33 to set 3.First sensor 32, for obtaining wafer General image.Second sensor 33, the edge image for obtaining the wafer;33 He of first sensor 32 and second sensor Processor 4 couples, for the edge image of the general image of the wafer of acquisition and wafer to be sent to processor 4.Optical imagery The light of first visual field 34 is projected the by device 31, the light of light and the second visual field 35 for obtaining the first visual field 34 On one sensor 32, to obtain the general image of wafer.The light of second visual field 35 is projected in second sensor 33, to obtain Obtain the edge image of wafer.Optical imaging device 31 includes objective lens 311, the first lens 313, galvanometer 315, the second lens 314 With spectroscope 312.The objective lens 311 of optical imaging device 31 are for focusing to the light of the first visual field 34, to defocused The light of first visual field 34 reaches spectroscope 312.Spectroscope 312 reflects the light to the first defocused visual field 34.First lens The light of the light of the first visual field 34 after 313 Transflectives, the first visual field 34 transmitted reaches on first sensor 32.Light The objective lens 311 for learning imaging device 31 are additionally operable to focus to the light of the second visual field 35, to the second defocused visual field 35 Light reaches the second lens 314.Second lens 314 transmit the light to the second defocused visual field 35.The reflection of galvanometer 315 second is thoroughly The light for the second visual field 35 that mirror 314 transmits.Second lens 314 transmit the light for the second visual field 35 that galvanometer 315 reflects.Light splitting The light that mirror 312 reflects the second visual field 35 of the reflection of galvanometer 315 of the second lens 314 transmission reaches in second sensor 33.
Further, the optical imaging device of the present embodiment may include two light channels.
Wherein, visual field includes the first visual field 34 and the second visual field 35.
The route of first light channel is to reach first by the first lens 313 by objective lens 311-- spectroscopes 312-- Sensor 32.
The route of second light channel is by 314-galvanometer of objective lens 311-- spectroscope 312-- lens 315-the second Lens 314--- reaches second sensor by reflective mirror 312.
Specifically, as shown in figure 3, being transmitted after the light of the focusing visual field of objective lens 311.Spectroscope 312 will be from objective lens 311 The light transmitted separates the first light and the second light.First light is to be transmitted after 312 reverberation microscope group 311 of spectroscope focuses Visual field light, the second light is that spectroscope 312 transmits the light of visual field transmitted after objective lens 311 focus.First lens 313 the first light of transmission, the first light is received for first sensor 32.Second lens 314 transmit the second light.Galvanometer 315 Reflect the second light of the second lens 314 transmission.Second lens 314 are additionally operable to transmission galvanometer 315 and reflect the transmission of the second lens Second light.Spectroscope 312 is additionally operable to the second light that the galvanometer 315 of reflection the second lens 314 transmission reflects, and is passed for second Sensor 33 receives the second light.
Sensor in the present embodiment includes ccd image sensor and analog-digital converter, and analog-digital converter receives ccd image Sensor obtains light from optical imaging device and is converted into analog signal and is sent to analog-digital converter, and analog-digital converter receives The analog signal of ccd image sensor is simultaneously converted into digital signal transmission processor.Wherein, the ccd image of second sensor passes The high resolution of sensor is in the ccd image sensor of first sensor.Using the optical imaging device of the present embodiment, in wafer When edge image acquires, the visual field of second sensor is very small, relatively improves image acquisition resolution, and then improves alignment essence Degree.Therefore, the ccd sensor of low resolution can be used in first sensor and second sensor, reduces equipment cost.
Further, optical imaging device includes biaxial MEMS in the present embodiment, the reflection angle for adjusting galvanometer 315. Adding the galvanometer 315 of biaxial MEMS can accurately and quickly adjust the angle, and light is made to be reflected back the second lens 314 again, It is imaged on the ccd image sensor of second sensor 33 after being reflected by spectroscope 312, and then obtains high-resolution Local map Picture can realize the scanning collection for the image that crystal round fringes are completed in 1 second.The scanning collection of the image of crystal round fringes, specifically It is the reflection angle for controlling galvanometer 315 by biaxial MEMS, obtains the edge image of the wafer corresponding to different angles of reflection.It can be with It is not acquired by the way of wafer rotary motion, detection resolution and efficiency can be improved.
The workflow of wafer alignment system in the present embodiment is:
(a), wafer 5 is moved to prealignment station by motion platform 1.
(b), the first sensor 32 of image acquiring device 3 obtains the light of the first visual field 34 from optical imaging device 31 Line, and by the light of the first visual field 34 be converted into analog signal by analog-digital converter be converted into digital signal image information send out Processor 4 is given, even if processor 4 obtains the general image of wafer.
(c), processor 4 handles the general image of wafer 5, and calculates motion platform 1 and moved in X-axis and Y-axis The first regulated value and the first angle that turns about the Z axis.Specifically, obtaining the side of wafer general image using image processing algorithm Edge point coordinates, and obtain the first regulated value that X-axis and Y-axis move and the first angle that Z axis rotates using least square method.
(d), the first regulated value and first angle are sent to motion platform 1 by processor 4, are moved with controlled motion platform 1, It realizes that initial alignment is adjusted, the edge of wafer 5 is made to be located at and can finely be adjusted according to the edge image (i.e. the second visual field 35) of wafer 5 On the position of section.
(e), the second sensor 33 of video acquisition device 3 obtains the light of the second visual field 35 from optical imaging device 31 Line, and by the light of the second visual field 35 be converted into analog signal by analog-digital converter be converted into digital signal image information send out Processor 4 is given, even if processor 4 obtains the edge image of wafer.The reflection angle of galvanometer 315 is controlled by biaxial MEMS, The edge image of the wafer corresponding to different angles of reflection is obtained, and then obtains a series of edge image of wafers 5.
(f), processor 4 handles a series of edge images of wafer 5, and calculates motion platform 1 in X-axis and Y Second regulated value of axis movement and the second angle turned about the Z axis.Specifically, obtaining crystal round fringes figure using image processing algorithm The edge point coordinates of picture, and obtain second jiao of the second regulated value and Z axis rotation that X-axis and Y-axis move using least square method Degree.
(g), the second regulated value and second angle are sent to motion platform 1 by processor 4, are moved with controlled motion platform 1, It realizes to wafer alignment.
Wherein, the angle computation method of the regulated value and Z axis rotation of wafer wafer-supporting platform X-axis and Y-axis movement is specially:It is inciting somebody to action During wafer is placed into wafer-supporting platform, wafer larger deviation can all occur relative to the pose at wafer-supporting platform center.Such as Fig. 4 institutes Show, is simplified two-dimensional coordinate system, xoy is wafer-supporting platform coordinate system, and XOY is lathe coordinate system.(cx,cy) it is that crystal circle center point C exists Coordinate in wafer-supporting platform coordinate system is considered as the offset deviation of wafer.θ is the drift angle of wafer trimming, is the angular displacement amount of wafer. Offset deviation and angular displacement are calculated using crystal round fringes point data.To ensure that machining accuracy, these deviations all should It is compensated.Once wafer is put on wafer-supporting platform, wafer cannot be moved relative to wafer-supporting platform again.Therefore correction course should divide For two steps.The first step is rotation wafer-supporting platform correction angular displacement θ, and second step is correction offset deviation, it is noted that correction angular displacement After θ, the offset deviation of wafer is no longer (cx,cy), it needs to recalculate.
It is that wafer central coordinate of circle (c is calculated by collected crystal round fringes point data using circle fitting algorithmx,cy).Such as figure Shown in 5, setting vision-based detection module acquires N number of discrete point P on crystal round fringesi(xi,yi) (not including the point in trimming), so Constructed fuction afterwards,
R in formulai——(xi,yi) put and arrive crystal circle center (cx,cy) distance.
The connotation of E in formula (1) is all sampled points and cx、cyThe sum of with the deviation of circumference determined by R.
It is optimal fitting circle that can make the circle of E minimums.However contain radical in (1) formula, it is unfavorable for Optimization Solution.
R is used respectivelyi 2And R2Instead of riAnd R, although can amplify the effect of the point apart from the center of circle farther out, it has parsing Solution, can accurately find out Circle Parameters.
So solving Circle Parameters using following optimization object function.
Extreme value is asked to E, then needs to make E respectively to cx、cyLocal derviation is sought with R
I.e.
Solve this equation, you can find out the location parameter c of waferx、cyAnd R.
The calculating of angular displacement, it is assumed that Q1, Q2..., QmFor the point in trimming, as shown in fig. 6, its rectangular co-ordinate distinguishes (x1, y1), (x2,y2) ..., (xm,ym).Do least squares line fitting, so that it may to obtain the linear equation y=kx+b where trimming, Wherein,
Wafer drift angle can be expressed as,
θ=- arctank (6)
Note that θ is divided into positive and negative, positive value expression trimming deviation first quartile, negative value expression trimming the second quadrant of deviation.
By circle fitting and trimming (notch) detection, wafer prealigning system has been obtained for wafer in wafer-supporting platform coordinate system Position deviation parameter c in xoyx、cyAnd θ.
Wafer position deviation is corrected below:Know from the definition of wafer prealigning, the purpose of wafer prealigning is After wafer loading, position deviation of the wafer under lathe coordinate system is compensated.
The compensation process of this programme is carried out in two steps:The first step is rotation wafer-supporting platform correction angular displacement θ;Second step is correction Offset deviation;It is noted that after correction angular displacement θ, the offset deviation of wafer is no longer (cx,cy), it needs to recalculate.Angle Degree correction is as shown in Figure 7.Pass through wafer-supporting platform rotation angleAfter carrying out drift angle compensation, trimming is vertical with y-axis, the wafer center of circle It is moved to C' points from C points.Known by geometrical relationship,=θ.So the first step of correction is the angles wafer-supporting platform rotation θ, angle is completed Degree correction.It is setting C and C' points coordinate respectively (C under lathe coordinate system to carry out displacement correctionx,Cy) and (C'x,C'y), it holds Coordinates of the piece platform coordinate origin o under lathe coordinate system is (ox,oy), then it can be obtained according to two-dimensional assemblage relationship,
Due to coordinate (c of the C points under wafer-supporting platform coordinate systemx,cy) acquired by circle fitting, so have,
Then it can obtain,
The wafer center of circle is moved into C' points at this time, if X and the required bit shift compensation value of Y-direction are respectively xc1And yc1, It can then obtain,
Therefore, the second step of correction, X, Y-axis translate x respectivelyc1And yc1
Embodiment as described above is applicable not only to figuratum wafer alignment, is also applied for the wafer alignment of pattern-free. As existing pattern-free wafer alignment method class, the wafer alignment system of the application can obtain the translation adjusting of wafer Value and rotation adjust angle.Due to first obtaining the general image of wafer, the regulated value of motion platform is calculated, according to regulated value to crystalline substance Round position carries out initial adjustment, and the edge of wafer is made to be located on the position that can be fine-tuned according to the edge image of wafer. In the edge image for obtaining wafer, according to the edge image of wafer, then the regulated value of moving platform is calculated, according to regulated value to crystalline substance Circle position is fine-tuned, and then completes wafer prealigning.Piece is held so that need not be replaced after carrying out prealignment to wafer Platform and the efficiency for improving wafer prealigning.The wafer alignment system of the application can substitute existing pattern-free wafer pair completely Barebone and method.Relative to the existing alignment methods for having pattern wafer, the wafer alignment system of the application need not be frequent Ground moving movement platform avoids continually acquiring image and because without continually carrying out pattern-recognition.
Embodiment two:
Referring to FIG. 8, for the wafer alignment method flow diagram of another embodiment, this method includes:
Step 201, the image for obtaining wafer entirety.
Wafer 5 is moved to prealignment station by motion platform 1, the first sensor 32 of image acquiring device 3 from optics at Light as obtaining the first visual field 34 in device 31, and convert the light of the first visual field 34 to analog signal and pass through analog-to-digital conversion The image information that device is converted into digital signal is sent to processor 4, even if processor 4 obtains the general image of wafer.
Step 202 handles the general image of wafer, and calculates the third that motion platform is moved in X-axis and Y-axis Regulated value and the third angle turned about the Z axis.
Processor 4 handles the general image of wafer 5, and calculates motion platform 1 is moved in X-axis and Y-axis the Three regulated values and the third angle turned about the Z axis.Specifically, obtaining the marginal point of wafer general image using image processing algorithm Coordinate, and obtain the third regulated value that X-axis and Y-axis move and the third angle that Z axis rotates using least square method.
Step 203, the position that wafer is adjusted according to third regulated value and the third angle angle value.
The third angle angle value of the third regulated value that X-axis and Y-axis move and Z axis rotation is sent to motion platform by processor 4 1, the third angle angle value that the third regulated value and Z axis that motion platform 1 is moved according to X-axis and Y-axis rotate moves, and carries out wafer position Initial adjustment.
Step 204, the image for obtaining crystal round fringes;
The second sensor 33 of video acquisition device 3 obtains the light of the second visual field 35 from optical imaging device 31, and It converts the light of the second visual field 35 to analog signal and is converted by analog-digital converter the image information of digital signal and be sent to Processor 4, even if processor 4 obtains the edge image of wafer 5.The reflection angle of galvanometer 315 is controlled by biaxial MEMS, is obtained The edge image of wafer corresponding to different angles of reflection, and then processor 4 can get a series of edge image of wafers 5.
Step 205 handles the edge image of wafer, and calculates the motion platform is moved in X-axis and Y-axis the 4th Regulated value and the fourth angle turned about the Z axis.
Processor 4 handles a series of edge images of wafer 5, and calculates motion platform 1 and moved in X-axis and Y-axis The 4th dynamic regulated value and the fourth angle turned about the Z axis.Specifically, obtaining crystal round fringes image using image processing algorithm Edge point coordinates, and obtain the 4th regulated value that X-axis and Y-axis move and the fourth angle that Z axis rotates using least square method.
Step 206, the position that the wafer is adjusted according to the 4th regulated value and fourth angle.
The fourth angle angle value of the 4th regulated value that X-axis and Y-axis move and Z axis rotation is sent to motion platform by processor 4 1, the fourth angle angle value that the 4th regulated value and Z axis that motion platform 1 is moved according to X-axis and Y-axis rotate moves, and carries out wafer position Adjusting, terminate the alignment of wafer.
Use above specific case is illustrated the present invention, is merely used to help understand the present invention, not limiting The system present invention.For those skilled in the art, according to the thought of the present invention, can also make several simple It deduces, deform or replaces.

Claims (10)

1. a kind of wafer alignment system, which is characterized in that including:
Motion platform in X-axis and Y-axis movement and can turn about the Z axis;
Wafer wafer-supporting platform is supported on the motion platform, for carrying wafer;
Image acquiring device is set to above the wafer wafer-supporting platform, the edge of general image and wafer for obtaining wafer Image;
Processor is coupled with described image acquisition device and the motion platform, for the general image to the wafer into Row processing, and the first regulated value that the motion platform is moved in X-axis and Y-axis and the first angle turned about the Z axis are calculated, and First regulated value and the first angle are sent to the motion platform, moved with controlling the motion platform;
The processor is additionally operable to handle the edge image of the wafer, and calculates the motion platform in X-axis and Y Second regulated value of axis movement and the second angle turned about the Z axis, second regulated value and the second angle are sent to The motion platform is moved with controlling the motion platform.
2. wafer alignment system according to claim 1, which is characterized in that described image acquisition device includes:
First sensor, the general image for obtaining the wafer;
Second sensor, the edge image for obtaining the wafer;
The first sensor and the second sensor are coupled with the processor respectively, are used for the overall diagram of the wafer The edge image of picture and the wafer is sent to the processor.
3. wafer alignment system according to claim 2, which is characterized in that the sensor includes ccd image sensor And analog-digital converter;
The ccd image sensor is sent to the analog-digital converter for obtaining light and being converted into analog signal;
The analog-digital converter is used to convert the analog signal that the ccd image sensor received is sent to digital signal hair Give the processor.
4. wafer alignment system according to claim 3, which is characterized in that described image acquisition device further include optics at As device;
The optical imaging device is used to obtain the light of the light and the second visual field of the first visual field, by the light of first visual field Line projects on the first sensor, to obtain the general image of the wafer;
The light of second visual field is projected in the second sensor, to obtain the edge image of the wafer.
5. wafer alignment system according to claim 4, which is characterized in that the optical imaging device include objective lens, Spectroscope and the first lens;
The objective lens focus to the light of first visual field, described in the light arrival to defocused first visual field Spectroscope;
Light of the spectroscope reflection to defocused first visual field;
The light of the light of first visual field after the first lens Transflective, first visual field transmitted reaches On the first sensor.
6. wafer alignment system according to claim 5, which is characterized in that the optical imaging device include objective lens, Second lens, galvanometer and spectroscope;
The objective lens focus to second visual field, and described second is reached thoroughly to the light of defocused second visual field Mirror;
Light of the second lens transmission to defocused second visual field;
The light for second visual field that second lens described in the vibration mirror reflected transmit;
Second lens transmit the light of second visual field of the vibration mirror reflected;
The spectroscope reflects described in the light arrival of second visual field of the vibration mirror reflected of the second lens transmission In second sensor.
7. wafer alignment system according to claim 6, which is characterized in that the optical imaging device further includes twin shaft MEMS makes the second sensor obtain corresponding with the angle of reflection for the reflection angle by adjusting the galvanometer The light of second visual field.
8. a kind of optical imaging device for wafer alignment, which is characterized in that including objective lens, the third lens, galvanometer, the 4th Lens and spectroscope;
It is transmitted after the light of the objective lens focusing visual field;
The light that the spectroscope is transmitted from the objective lens separates the first light and the second light;
First light is the light that the spectroscope reflects the visual field transmitted after the objective lens focus, described second Light is the light that the spectroscope transmits the visual field transmitted after the objective lens focus;
The third lens transmit first light, and first light is received for 3rd sensor;
4th lens transmit second light;
Second light that 4th lens described in the vibration mirror reflected transmit;
4th lens are additionally operable to transmit second light that the 4th lens described in the vibration mirror reflected transmit;
The spectroscope is additionally operable to reflect second light of the vibration mirror reflected of the 4th lens transmission, is used for the 4th Sensor receives second light.
9. optical imaging device according to claim 8, which is characterized in that the optical imaging device further includes twin shaft MEMS, the reflection angle for adjusting the galvanometer.
10. a kind of wafer alignment method, which is characterized in that including:
Obtain the image of the wafer entirety;
The general image of the wafer is handled, and calculates the third that the motion platform is moved in X-axis and Y-axis and adjusts The third angle for being worth and turning about the Z axis;
The position of the wafer is adjusted according to the third regulated value and the third angle angle value;
Obtain the image of the crystal round fringes;
The edge image of the wafer is handled, and calculates the 4th adjusting that the motion platform is moved in X-axis and Y-axis The fourth angle for being worth and turning about the Z axis;
The position of the wafer is adjusted according to the 4th regulated value and the fourth angle.
CN201810533919.5A 2018-05-29 2018-05-29 Wafer alignment system and method and optical imaging device for wafer alignment Active CN108615699B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810533919.5A CN108615699B (en) 2018-05-29 2018-05-29 Wafer alignment system and method and optical imaging device for wafer alignment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810533919.5A CN108615699B (en) 2018-05-29 2018-05-29 Wafer alignment system and method and optical imaging device for wafer alignment

Publications (2)

Publication Number Publication Date
CN108615699A true CN108615699A (en) 2018-10-02
CN108615699B CN108615699B (en) 2023-11-07

Family

ID=63664344

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810533919.5A Active CN108615699B (en) 2018-05-29 2018-05-29 Wafer alignment system and method and optical imaging device for wafer alignment

Country Status (1)

Country Link
CN (1) CN108615699B (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110021027A (en) * 2019-04-18 2019-07-16 易思维(杭州)科技有限公司 A kind of trimming point calculating method based on binocular vision
CN110045477A (en) * 2019-04-16 2019-07-23 中国科学院光电技术研究所 A kind of optical element automatic centering method based on Phase-Resolved Analysis
CN111106054A (en) * 2019-12-05 2020-05-05 福建省福联集成电路有限公司 Method for prejudging wafer calibration value and storage medium
CN113251936A (en) * 2021-07-09 2021-08-13 成都太科光电技术有限责任公司 Vertical semiconductor wafer TTV interference testing device
CN113793826A (en) * 2021-11-16 2021-12-14 西安奕斯伟材料科技有限公司 Silicon wafer orientation alignment device and silicon wafer defect detection equipment
CN114441440A (en) * 2021-12-23 2022-05-06 浙江大学 Wafer defect detection system and method
CN114485395A (en) * 2022-01-06 2022-05-13 深圳中科飞测科技股份有限公司 Bearing method and related device
CN114543665A (en) * 2022-01-13 2022-05-27 魅杰光电科技(上海)有限公司 Semiconductor detection camera module installation calibration device and calibration method thereof
TWI803890B (en) * 2021-03-12 2023-06-01 台灣積體電路製造股份有限公司 Semiconductor alignment apparatus and method for aligning semiconductor
CN116277015A (en) * 2023-04-07 2023-06-23 上海感图网络科技有限公司 Data processing method, device, equipment and storage medium
CN116736508A (en) * 2023-08-16 2023-09-12 苏州高视半导体技术有限公司 Wafer focusing method, electronic device and storage medium
CN116780971A (en) * 2023-08-25 2023-09-19 无锡弘德科技有限公司 Galvanometer motor drive control system of digital-analog hybrid architecture
CN117457550A (en) * 2023-12-26 2024-01-26 深圳市森美协尔科技有限公司 Wafer alignment method and related device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4845373A (en) * 1984-02-22 1989-07-04 Kla Instruments Corporation Automatic alignment apparatus having low and high resolution optics for coarse and fine adjusting
US20080050006A1 (en) * 2006-08-23 2008-02-28 Cognex Corporation Method and apparatus for semiconductor wafer alignment
CN104979258A (en) * 2014-04-14 2015-10-14 睿励科学仪器(上海)有限公司 Wafer aligning system and wafer aligning method
US20160329229A1 (en) * 2013-12-31 2016-11-10 Shanghai Micro Electronics Equipment Co., Ltd. Silicon Wafer Pre-alignment Device and Method Therefor
CN106158715A (en) * 2015-04-24 2016-11-23 上海微电子装备有限公司 Prealignment device and method for wafer
US9748128B1 (en) * 2016-06-01 2017-08-29 Micron Technology, Inc. Systems and methods for wafer alignment

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4845373A (en) * 1984-02-22 1989-07-04 Kla Instruments Corporation Automatic alignment apparatus having low and high resolution optics for coarse and fine adjusting
US20080050006A1 (en) * 2006-08-23 2008-02-28 Cognex Corporation Method and apparatus for semiconductor wafer alignment
US20160329229A1 (en) * 2013-12-31 2016-11-10 Shanghai Micro Electronics Equipment Co., Ltd. Silicon Wafer Pre-alignment Device and Method Therefor
CN104979258A (en) * 2014-04-14 2015-10-14 睿励科学仪器(上海)有限公司 Wafer aligning system and wafer aligning method
CN106158715A (en) * 2015-04-24 2016-11-23 上海微电子装备有限公司 Prealignment device and method for wafer
US9748128B1 (en) * 2016-06-01 2017-08-29 Micron Technology, Inc. Systems and methods for wafer alignment

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110045477A (en) * 2019-04-16 2019-07-23 中国科学院光电技术研究所 A kind of optical element automatic centering method based on Phase-Resolved Analysis
CN110045477B (en) * 2019-04-16 2020-11-03 中国科学院光电技术研究所 Optical element automatic centering method based on phase analysis
CN110021027B (en) * 2019-04-18 2021-03-16 易思维(杭州)科技有限公司 Edge cutting point calculation method based on binocular vision
CN110021027A (en) * 2019-04-18 2019-07-16 易思维(杭州)科技有限公司 A kind of trimming point calculating method based on binocular vision
CN111106054A (en) * 2019-12-05 2020-05-05 福建省福联集成电路有限公司 Method for prejudging wafer calibration value and storage medium
TWI803890B (en) * 2021-03-12 2023-06-01 台灣積體電路製造股份有限公司 Semiconductor alignment apparatus and method for aligning semiconductor
US11854853B2 (en) 2021-03-12 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer positioning method and apparatus
CN113251936A (en) * 2021-07-09 2021-08-13 成都太科光电技术有限责任公司 Vertical semiconductor wafer TTV interference testing device
CN113793826A (en) * 2021-11-16 2021-12-14 西安奕斯伟材料科技有限公司 Silicon wafer orientation alignment device and silicon wafer defect detection equipment
CN114441440A (en) * 2021-12-23 2022-05-06 浙江大学 Wafer defect detection system and method
CN114485395A (en) * 2022-01-06 2022-05-13 深圳中科飞测科技股份有限公司 Bearing method and related device
CN114543665A (en) * 2022-01-13 2022-05-27 魅杰光电科技(上海)有限公司 Semiconductor detection camera module installation calibration device and calibration method thereof
CN114543665B (en) * 2022-01-13 2024-01-09 魅杰光电科技(上海)有限公司 Semiconductor detection camera module installation calibration device and calibration method thereof
CN116277015A (en) * 2023-04-07 2023-06-23 上海感图网络科技有限公司 Data processing method, device, equipment and storage medium
CN116277015B (en) * 2023-04-07 2024-01-23 上海感图网络科技有限公司 Data processing method, device, equipment and storage medium
CN116736508B (en) * 2023-08-16 2023-11-28 苏州高视半导体技术有限公司 Wafer focusing method, electronic device and storage medium
CN116736508A (en) * 2023-08-16 2023-09-12 苏州高视半导体技术有限公司 Wafer focusing method, electronic device and storage medium
CN116780971B (en) * 2023-08-25 2023-10-31 无锡弘德科技有限公司 Galvanometer motor drive control system of digital-analog hybrid architecture
CN116780971A (en) * 2023-08-25 2023-09-19 无锡弘德科技有限公司 Galvanometer motor drive control system of digital-analog hybrid architecture
CN117457550A (en) * 2023-12-26 2024-01-26 深圳市森美协尔科技有限公司 Wafer alignment method and related device
CN117457550B (en) * 2023-12-26 2024-03-29 深圳市森美协尔科技有限公司 Wafer alignment method and related device

Also Published As

Publication number Publication date
CN108615699B (en) 2023-11-07

Similar Documents

Publication Publication Date Title
CN108615699A (en) A kind of wafer alignment system and method and the optical imaging device for wafer alignment
US9009952B2 (en) Apparatus for assembling a lens module and an image sensor to form a camera module, and a method of assembling the same
US7656425B2 (en) Robust field of view distortion calibration
US9285578B2 (en) Method for imaging high density biochemical arrays with sub-pixel alignment
CN208478309U (en) A kind of optical imaging device and wafer alignment system for wafer alignment
US8934721B2 (en) Microscopic vision measurement method based on adaptive positioning of camera coordinate frame
CN111801198B (en) Hand-eye calibration method, system and computer storage medium
CN100578365C (en) Calibration device for aligning system of stepper and its calibration method
CN109448054A (en) The target Locate step by step method of view-based access control model fusion, application, apparatus and system
CN107957659B (en) Mask and wafer defect detection orthogonality compensation method
CN114695225A (en) Wafer pre-alignment device and wafer pre-alignment method
US7067808B2 (en) Electron beam system and electron beam measuring and observing method
CN110044262B (en) Non-contact precision measuring instrument based on image super-resolution reconstruction and measuring method
CN109242779A (en) A kind of construction method, device and the automatic vehicle control system of camera imaging model
US20210364288A1 (en) Optical measurement and calibration method for pose based on three linear array charge coupled devices (ccd) assisted by two area array ccds
CN110136068B (en) Sound membrane dome assembly system based on position calibration between bilateral telecentric lens cameras
US20070008532A1 (en) Center determination of rotationally symmetrical alignment marks
US20040223661A1 (en) System and method of non-linear grid fitting and coordinate system mapping
CN113781579B (en) Geometric calibration method for panoramic infrared camera
JP2008288869A (en) Calibration device, and calibrating method and program
CN108898585B (en) Shaft part detection method and device
CN102183305B (en) Micro-scanning calibrating method of optical micro-scanning thermal microscope imaging system
CN115793722A (en) High-precision tracking method and system for ground level type solar telescope storehouse de-focus surface
CN114862723A (en) Astronomical telescope image field distortion calibration method based on measurement of dense star field
CN112272272B (en) Imaging method and device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant