CN108614664B - 基于NAND flash的读错误处理方法和装置 - Google Patents
基于NAND flash的读错误处理方法和装置 Download PDFInfo
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- CN108614664B CN108614664B CN201611129100.XA CN201611129100A CN108614664B CN 108614664 B CN108614664 B CN 108614664B CN 201611129100 A CN201611129100 A CN 201611129100A CN 108614664 B CN108614664 B CN 108614664B
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- nand flash
- data block
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- read error
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0608—Saving storage space on storage systems
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0646—Horizontal data movement in storage systems, i.e. moving data in between storage devices or systems
- G06F3/0652—Erasing, e.g. deleting, data cleaning, moving of data to a wastebasket
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Abstract
Description
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201611129100.XA CN108614664B (zh) | 2016-12-09 | 2016-12-09 | 基于NAND flash的读错误处理方法和装置 |
Applications Claiming Priority (1)
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CN201611129100.XA CN108614664B (zh) | 2016-12-09 | 2016-12-09 | 基于NAND flash的读错误处理方法和装置 |
Publications (2)
Publication Number | Publication Date |
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CN108614664A CN108614664A (zh) | 2018-10-02 |
CN108614664B true CN108614664B (zh) | 2021-04-16 |
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CN201611129100.XA Active CN108614664B (zh) | 2016-12-09 | 2016-12-09 | 基于NAND flash的读错误处理方法和装置 |
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CN (1) | CN108614664B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109460371A (zh) * | 2018-11-06 | 2019-03-12 | 湖南国科微电子股份有限公司 | 一种固态硬盘数据块错误处理方法 |
CN111158589B (zh) * | 2019-12-16 | 2023-10-20 | 绿晶半导体科技(北京)有限公司 | 存储阵列的动态管理方法和装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012146129A (ja) * | 2011-01-12 | 2012-08-02 | Mega Chips Corp | メモリアクセス制御装置 |
CN102820057A (zh) * | 2011-06-08 | 2012-12-12 | 三星电子株式会社 | 非易失性存储装置及编程非易失性存储装置的方法 |
CN105468534A (zh) * | 2014-09-30 | 2016-04-06 | Emc公司 | 使用读取阈值表提高闪存利用率的方法和*** |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006110140A1 (en) * | 2005-04-08 | 2006-10-19 | Hewlett-Packard Development Company, L.P. | System and method of reporting error codes in an electronically controlled device |
CN101887351B (zh) * | 2010-06-22 | 2012-07-11 | 杭州华三通信技术有限公司 | 一种磁盘阵列容错方法及其*** |
CN103218274B (zh) * | 2013-03-15 | 2016-12-28 | 华为技术有限公司 | 一种预防故障累加的方法和固态硬盘 |
CN103455386B (zh) * | 2013-08-28 | 2016-11-23 | 华为技术有限公司 | 一种修复出错数据的方法和设备 |
CN103745753A (zh) * | 2013-12-17 | 2014-04-23 | 记忆科技(深圳)有限公司 | 基于闪存的纠错方法与*** |
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2016
- 2016-12-09 CN CN201611129100.XA patent/CN108614664B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012146129A (ja) * | 2011-01-12 | 2012-08-02 | Mega Chips Corp | メモリアクセス制御装置 |
CN102820057A (zh) * | 2011-06-08 | 2012-12-12 | 三星电子株式会社 | 非易失性存储装置及编程非易失性存储装置的方法 |
CN105468534A (zh) * | 2014-09-30 | 2016-04-06 | Emc公司 | 使用读取阈值表提高闪存利用率的方法和*** |
Non-Patent Citations (2)
Title |
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Adaptive Read Thresholds for NAND Flash;Borja Peleato 等;《IEEE Transactions on Communications》;20150930;第3069-3081页 * |
大容量存储中NAND Flash坏块的管理方法;宁飞;《电子测试》;20110308;第64-68页 * |
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CN108614664A (zh) | 2018-10-02 |
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Effective date of registration: 20200825 Address after: 100083 Beijing City, Haidian District Xueyuan Road No. 30, large industrial building A block 12 layer Applicant after: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. Address before: 202, room 52, building 2, 100176 North View Garden, Daxing District economic and Technological Development Zone, Beijing Applicant before: BEIJING JINGCUN TECHNOLOGY Co.,Ltd. |
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Address after: Room 101, Floor 1-5, Building 8, Yard 9, Fenghao East Road, Haidian District, Beijing 100094 Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 100083 12 Floors, Block A, Tiangong Building, Science and Technology University, 30 College Road, Haidian District, Beijing Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |
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