CN108598191A - A kind of more main grid high-efficiency battery pieces of compatible half battery - Google Patents
A kind of more main grid high-efficiency battery pieces of compatible half battery Download PDFInfo
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- CN108598191A CN108598191A CN201810594611.1A CN201810594611A CN108598191A CN 108598191 A CN108598191 A CN 108598191A CN 201810594611 A CN201810594611 A CN 201810594611A CN 108598191 A CN108598191 A CN 108598191A
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- main grid
- electrode
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- 239000004411 aluminium Substances 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 230000005684 electric field Effects 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 4
- 239000011295 pitch Substances 0.000 claims description 3
- 230000011218 segmentation Effects 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052709 silver Inorganic materials 0.000 abstract description 4
- 239000004332 silver Substances 0.000 abstract description 4
- 238000003466 welding Methods 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention provides a kind of more main grid high-efficiency battery pieces of compatible half battery, including front electrode, silicon substrate, back aluminium electric field and the backplate set gradually；Front electrode includes more longitudinal front main grid lines and the lateral secondary grid line in a plurality of front, and the secondary grid line of front main grid line and front is mutually perpendicular to and intersects；Front electrode includes two parts symmetrical above and below, and the both ends of the front main grid line per part are band fork structure, and top and the bottom intermediate region is connected without grid line, forms positive clear area.Back aluminium electric field and backplate, which are divided longitudinally into, completes symmetrical two parts, and intermediate blank area is without back surface field and back electrode, and blank sector width is equal to the secondary grid spacing in front, and position is overlapped with positive clear area；Backplate is segmented electrodes；Overleaf electrode is connected in transverse direction with back electrode both sides the setting of back aluminium electric field with exterior domain.The structure can improve battery efficiency, reduce silver paste consumption, and realize full wafer and half battery compatibility.
Description
Technical field
The invention belongs to area of solar cell, more particularly to a kind of more main grid high-efficiency battery pieces of compatible half battery.
Background technology
Solar energy power generating has obtained global common concern as a kind of energy utilization patterns of clean and effective,
It is the strategic emerging technology industry of state key development.
Metal electrode is the important major part of solar cell, the effect of electric current collection and transmission is primarily served, to battery
Performance has great influence.
The shading angle analysis designed from solar cel electrode, sunlight enter battery, positive metal from battery front side
Electrode can block a part of silicon chip, this part also can not just be transformed into electric energy according to luminous energy on the electrode, from this angle we
Wish that grid line is done more thinner better, shading is the smaller the better.But then, the responsibility of grid line is to conduct electric current, from conduction angle
Degree analysis, grid line get over that detailed rules and regulations conduction cross-sectional area is smaller, and ohmic loss is bigger, and power loss is also bigger.Therefore main grid and secondary grid
The core of design is that balance is obtained between shading and conduction, obtains optimal power of battery output.
Slurry main component due to making grid line is the noble silver of higher price, is the important set of battery manufacture cost
At part.
Under prior art working condition, front electrode main grid bear the responsibility of connection welding belt and can not be too thin, too carefully
Main grid will cause welding difficulty, can not ensure weld pulling force, for balance its shading loss, main grid quantity cannot be too many, this
It is exactly the main reason for main grid quantity of current volume production battery is no more than 5.
In the case where die size is certain, less main grid quantity means that distance of the secondary grid between main grid is larger, i.e.,
The transmission range of electric current is longer, and secondary gate resistance loss is larger.To reduce its resistance loss, it is necessary to increase the cross section of secondary grid line
Product, but this increases secondary grid shading loss and slurry consumption simultaneously again.
Half battery is promoted obviously in terms of component power, and reason is to effectively reduce the transmission electric current on welding, makes
Welding resistance loss is obtained to be decreased obviously.But the existing electrode pattern based on full wafer battery design can not directly carry out hemisection work
Industry cannot achieve the compatibility of full wafer battery and half battery.
Therefore, on the basis of existing battery, by completely new electrode design, realize that battery efficiency is promoted and silver paste consumption
Decline, while full wafer and half battery can be compatible with, it appears is particularly urgent.
Invention content
The object of the invention is to produce a kind of more main grid high-efficiency battery pieces of compatible half battery, can improve battery effect
Rate reduces silver paste consumption, and realizes full wafer and half battery compatibility.
To achieve the above object, technical solution of the invention is,
A kind of more main grid high-efficiency battery pieces of compatible half battery, including set gradually front electrode, silicon substrate, the back side
Aluminium electric field and backplate；Front electrode includes more longitudinal front main grid lines and the lateral secondary grid line in a plurality of front, front
The secondary grid line of main gate line and front is mutually perpendicular to and intersects；Front electrode includes two parts symmetrical above and below, and the front per part is main
The both ends of grid line are band fork structure, and top and the bottom central contact areas is connected without grid line, forms positive clear area；Back aluminium electricity
Field and backplate are divided longitudinally into symmetrical two parts, and centre forms blank back area, and blank back area is without back surface field and back electrode.
Blank back sector width is equal to the secondary grid spacing in front.
Front main grid line is the solid main grid that both ends band pitches structure, and body width is 0.05~0.2mm.
Multiple pads are provided in main gate line, number of pads is 6~20, and bond pad shapes are rectangle, circle or diamond shape.
The width of positive clear area is equal to the spacing of the secondary grid line in two neighboring front.
Back electrode is solid or engraved structure, and pierced pattern is rectangle, circle or diamond shape.
Backplate is segmentation structure and forms array arrangement, single-row back electrode on silicon substrate backplate along longitudinal direction
Hop count be 4~10, back aluminium electric field setting overleaf electrode with exterior domain.
Adjacent backplate interruption distance is 2~10mm.
The width in blank back area is of same size with positive clear area, and position is identical as positive clear area.
Compared with prior art, the beneficial effects of the invention are as follows：
The present invention is designed by the more main grids of front electrode, is reduced the electric current on every main grid, is reduced the electricity on main grid
Resistance loss；The increase of main grid quantity simultaneously, reduces length of the secondary grid between main grid, reduces the transmission electric current on every secondary grid
And transmission range, reduce the transmission loss on secondary grid.Main grid and secondary grid transmit the decline of electric current, are keeping its resistance loss not
Under the premise of increased, its grid line cross-sectional area can be accordingly reduced, therefore effectively reduce grid line shading and slurry consumption, improved
Manufacturing cost is reduced while battery efficiency.By the longitudinally asymmetric separate design of positive back side figure, it can be achieved that full wafer and half
The compatibility of piece flexibly meets the different demands of component.By back electrode and back surface field it is longitudinal be spaced apart design, on the one hand reduction
Aluminium paste consumption, on the other hand solves the welding difficulty caused by back surface field and backplane difference in height, improves the weldering of backplate
Connect quality and assembly reliability.
Further, pass through front main grid both ends and intermediate band pitches structure design so that far from edge when welding of battery film,
Edge stress concentration is avoided to cause fragment.
Description of the drawings
Fig. 1 is the more main grid high-efficiency battery piece front schematic views of the present invention；
The more main grid high-efficiency battery piece schematic rear views of Fig. 2 present invention；
Wherein：1- front main grid lines, the secondary grid line in the fronts 2-, the fronts 3- clear area, 4- back aluminium electric fields, 5- backplates,
6- blank backs area, 7- band fork structures.
Specific implementation mode
The technology of the present invention is described in detail below in conjunction with the accompanying drawings：
As illustrated in fig. 1 and 2, a kind of more main grid high-efficiency battery pieces of compatible half battery, including front electrode, back aluminium electricity
Field and backplate.Front electrode includes 10~30 longitudinal front electrode main gate lines 1 and a plurality of secondary grid line being laterally arranged
2, every main gate line 1 and secondary grid line 2 are mutually perpendicular to and intersect；Backplate is single-row 4~10 back electrodes, columns and position with
Front electrode main gate line 1 is corresponding.Front electrode is divided longitudinally into full symmetric two parts, and positive clear area 3 is connected without grid line,
3 width of positive clear area is equal to secondary grid spacing.Back side Al-BSF 4 and backplate 5, which are divided longitudinally into, completes symmetrical two parts, the back of the body
Face clear area 6 is connected without back surface field with back electrode, and 6 width of blank back area is equal to front 2 spacing of secondary grid line, and position and front are empty
It is overlapped at white area 3.
The main gate line 1 of front electrode, which is both ends, to be had with the solid main grid for pitching structure, and width is 0.05~0.2mm.
Main gate line 1 is mutually parallel, and left and right is uniformly and symmetrically distributed；Multiple pad points, number of pads are provided in main gate line 1
It it is 6~20, bond pad shapes are rectangle, circle, diamond shape or polygon, and pad width is 0.5~1.5mm.
Backplate is the back electrode of segmented, and single-row back electrode hop count is 4~10, and back electrode is solid or hollow out knot
Structure, pierced pattern are rectangle, circle, diamond shape or other polygons.
Back surface field is that overleaf electrode is prepared with exterior domain, is connected with back electrode both sides in transverse direction, is used for collected current；
Lower in the longitudinal direction and back electrode is spaced apart certain distance, be spaced apart up and down apart from it is equal be 2~10mm.
The principle of the invention is：By the more main grid designs of front electrode, the electric current in every main gate line is reduced, master is reduced
Resistance loss on grid；The increase of main grid quantity simultaneously, reduces length of the secondary grid between main grid, reduces on every secondary grid
Electric current and transmission range are transmitted, the transmission loss on secondary grid is reduced.
The decline that main grid and secondary grid transmit electric current can accordingly reduce it under the premise of keeping its resistance loss not increased
Grid line cross-sectional area, therefore grid line shading and slurry consumption are effectively reduced, manufacture is reduced while improving battery efficiency
Cost.
By the longitudinally asymmetric separate design of positive back side figure, it can be achieved that the compatibility of full wafer and half, flexibly meets
The different demands of component.
Structure design is pitched by front main grid both ends and intermediate band so that far from edge when welding of battery film, avoids side
Fiber stress concentration causes fragment.
By back electrode and back surface field it is longitudinal be spaced apart design, on the one hand reduce aluminium paste consumption, on the other hand solve because
Welding difficulty caused by back surface field and backplane difference in height improves the welding quality and assembly reliability of backplate.
In addition, the above embodiment of the present invention is embodiment, there is the technological thought with claims of the present invention
It is allowed to identical method and plays the technical solution of identical function and effect, be all contained in the present invention.
Claims (9)
1. a kind of more main grid high-efficiency battery pieces of compatible half battery, it is characterised in that：Including front electrode, the silicon set gradually
Matrix, back aluminium electric field and backplate (5)；Front electrode includes a plurality of of longitudinal more front main grid lines (1) and transverse direction
Positive pair grid line (2), the secondary grid line (2) of front main grid line (1) and front are mutually perpendicular to and intersect；Front electrode includes symmetrical above and below
Two parts, per part front main grid line (1) both ends be band fork structure (7), top and the bottom central contact areas is without grid
Line connects, and forms positive clear area (3)；Back aluminium electric field (4) and backplate (5) are divided longitudinally into symmetrical two parts, intermediate
It is formed blank back area (6), blank back area (6) are without back surface field and back electrode.
2. a kind of more main grid high-efficiency battery pieces of compatible half battery according to claim 1, it is characterised in that：The back side is empty
White area (6) width is equal to the secondary grid spacing in front.
3. a kind of more main grid high-efficiency battery pieces of compatible half battery according to claim 1, it is characterised in that：Front is main
Grid line (1) is the solid main grid that both ends band pitches structure, and body width is 0.05~0.2mm.
4. a kind of more main grid high-efficiency battery pieces of compatible half battery according to claim 1, it is characterised in that：Main gate line
(1) multiple pads are provided on, number of pads is 6~20, and bond pad shapes are rectangle, circle or diamond shape.
5. a kind of more main grid high-efficiency battery pieces of compatible half battery according to claim 1, it is characterised in that：It is positive empty
The width in white area (3) is equal to the spacing of the secondary grid line (2) in two neighboring front.
6. a kind of more main grid high-efficiency battery pieces of compatible half battery according to claim 1, it is characterised in that：Back electrode
For solid or engraved structure, pierced pattern is rectangle, circle or diamond shape.
7. a kind of more main grid high-efficiency battery pieces of compatible half battery according to claim 1, it is characterised in that：Back side electricity
Backplate (5) is segmentation structure and forms array arrangement on silicon substrate along longitudinal direction for pole (5), and single-row back electrode hop count is 4
~10, back aluminium electric field (4) setting overleaf electrode (5) with exterior domain.
8. a kind of more main grid high-efficiency battery pieces of compatible half battery according to claim 6, it is characterised in that：The adjacent back of the body
Face electrode interruption distance is 2~10mm.
9. a kind of more main grid high-efficiency battery pieces of compatible half battery according to claim 1, it is characterised in that：The back side is empty
The width in white area (6) is of same size with positive clear area (3), and position is identical as positive clear area (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810594611.1A CN108598191A (en) | 2018-06-11 | 2018-06-11 | A kind of more main grid high-efficiency battery pieces of compatible half battery |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810594611.1A CN108598191A (en) | 2018-06-11 | 2018-06-11 | A kind of more main grid high-efficiency battery pieces of compatible half battery |
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| CN108598191A true CN108598191A (en) | 2018-09-28 |
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| CN201810594611.1A Pending CN108598191A (en) | 2018-06-11 | 2018-06-11 | A kind of more main grid high-efficiency battery pieces of compatible half battery |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110444614A (en) * | 2019-07-31 | 2019-11-12 | 天合光能股份有限公司 | A kind of efficient TOPCon battery of N-type |
| CN110797434A (en) * | 2019-09-24 | 2020-02-14 | 武宇涛 | Preparation method of photovoltaic cell module and photovoltaic cell module |
| WO2021037020A1 (en) * | 2019-08-30 | 2021-03-04 | 苏州携创新能源科技有限公司 | Main-gate-free solar cell and main-gate-free solar photovoltaic module |
| WO2021036801A1 (en) * | 2019-08-29 | 2021-03-04 | 通威太阳能（成都）有限公司 | New metal-semiconductor-contact-type multi-busbar single crystalline efficient cell |
| CN113725312A (en) * | 2021-08-18 | 2021-11-30 | 晶澳（扬州）太阳能科技有限公司 | Photovoltaic module and method for producing photovoltaic module |
| CN114300565A (en) * | 2020-09-22 | 2022-04-08 | 嘉兴阿特斯技术研究院有限公司 | Heterojunction solar cell |
| CN114784124A (en) * | 2022-03-24 | 2022-07-22 | 环晟光伏(江苏)有限公司 | Solar cell, cell string and solar cell module |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110444614A (en) * | 2019-07-31 | 2019-11-12 | 天合光能股份有限公司 | A kind of efficient TOPCon battery of N-type |
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| WO2021037020A1 (en) * | 2019-08-30 | 2021-03-04 | 苏州携创新能源科技有限公司 | Main-gate-free solar cell and main-gate-free solar photovoltaic module |
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| CN114784124A (en) * | 2022-03-24 | 2022-07-22 | 环晟光伏(江苏)有限公司 | Solar cell, cell string and solar cell module |
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