CN108593198A - Capacitance diaphragm gauge and dry etching apparatus chamber pressure test system - Google Patents
Capacitance diaphragm gauge and dry etching apparatus chamber pressure test system Download PDFInfo
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- CN108593198A CN108593198A CN201810368641.0A CN201810368641A CN108593198A CN 108593198 A CN108593198 A CN 108593198A CN 201810368641 A CN201810368641 A CN 201810368641A CN 108593198 A CN108593198 A CN 108593198A
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- chamber
- cavity
- pressure
- diaphragm
- dry etching
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L21/00—Vacuum gauges
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- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A kind of capacitance diaphragm gauge of present invention offer and dry etching apparatus chamber pressure test system.The capacitance diaphragm gauge includes：Adjacent first chamber and second chamber, the pressure diaphragm between the first chamber and second chamber, the measuring electrode in the first chamber, in the first chamber and with the spaced reference electrode of measuring electrode and the filter screen in the second chamber；Second cavity is used to be passed through the gas of dry etching apparatus cavity；The filter screen is used to adsorb the processing by products and cavity pollution object of dry etching apparatus cavity, processing by products and cavity pollution object is prevented to be attached in pressure diaphragm, cause pressure diaphragm that permanent deformation or damaged occurs, improve the measuring accuracy of capacitance diaphragm gauge, extend the service life of capacitance diaphragm gauge, ensure the vacuum pressure value stabilization of dry etching apparatus cavity, improves etching rate homogeneity.
Description
Technical field
The present invention relates to display technology field more particularly to a kind of capacitance diaphragm gauge and dry etching apparatus cavity pressures
Force test system.
Background technology
Thin film transistor (TFT) (Thin Film Transistor, TFT) is current liquid crystal display device (Liquid Crystal
Display, LCD) and active matrix drive type organic electroluminescence display device and method of manufacturing same (Active Matrix Organic Light-
Emitting Diode, AMOLED) in main driving element, the display performance of direct relation panel display apparatus.
Liquid crystal display on existing market is largely backlight liquid crystal display comprising liquid crystal display panel and the back of the body
Optical mode group (backlight module).The operation principle of liquid crystal display panel is in thin film transistor base plate (Thin Film
Transistor Array Substrate, TFT Array Substrate) and colored filter (Color Filter, CF)
Pour into liquid crystal molecule between substrate, and apply pixel voltage and common voltage respectively on two plate bases, by pixel voltage and
The light refraction of backlight module is out generated picture by the direction of rotation of the electric field controls liquid crystal molecule formed between common voltage
Face.
Thin film transistor (TFT) has various structures, and the material for preparing the thin film transistor (TFT) of corresponding construction also has a variety of, low temperature
Polysilicon (Low Temperature Poly-silicon, LTPS) material is wherein more preferred a kind of, since low temperature is more
The atomic rule of crystal silicon arranges, and carrier mobility is high, for the LCD of voltage driven type, LTPS TFT due to its have compared with
High mobility can use the TFT of small volume to realize to the deflection driven of liquid crystal molecule, largely reduce
Volume shared by TFT increases glazed area, obtains higher brightness and resolution.
In liquid crystal display and chip manufacturing industry, it is all made of dry etching (Dry Etch) technique, Dry Etch techniques need
It is carried out in the environment of low pressure high vacuum, usually only 10~50mTorr, so necessarily requiring processing procedure chamber vacuum pressure very
Stablize, needs that the pressure of cavity is made to maintain a certain level.The prior art passes through diaphragm by a condenser type pressure vacuum ga(u)ge
Amount of bow measures vacuum pressure, and since by-product is easy to adhere on the diaphragm of vacuum meter in processing procedure, diaphragm is easy to be corroded,
And diaphragm flexes amount can occur that permanent deformation is even damaged, even if regular hand reset, vacuum pressure measures still with the time
So there are certain errors.
Invention content
The purpose of the present invention is to provide a kind of capacitance diaphragm gauge, by filter screen adsorb processing by products and
Cavity pollution object prevents processing by products and cavity pollution object to be attached to pressure diaphragm surface, and pressure diaphragm is caused to occur forever
Deformation long is damaged, and measuring accuracy is high, and service life is long.
The present invention also aims to provide a kind of dry etching apparatus chamber pressure test system, always by the vacuum of cavity
Pressure value maintains a standard value, ensures the vacuum pressure value stabilization of cavity, improves etching rate homogeneity.
To achieve the above object, the present invention provides a kind of capacitance diaphragm gauges, including：Adjacent first chamber and
Second chamber, the pressure diaphragm between the first chamber and second chamber, the measurement electricity in the first chamber
Pole, in the first chamber and with the spaced reference electrode of measuring electrode and the mistake in the second chamber
Strainer；
Second cavity is used to be passed through the gas of dry etching apparatus cavity；
The filter screen is used to adsorb the processing by products and cavity pollution object of dry etching apparatus cavity.
The capacitance diaphragm gauge further include be set in the second chamber and positioned at pressure diaphragm and filter screen it
Between heater circuit.
The material of the filter screen is polytetrafluoroethylene (PTFE).
The material of the pressure diaphragm is inconel.
The thickness of the pressure diaphragm is 10um~90um.
The present invention also provides a kind of dry etching apparatus chamber pressures to test system, including：Cavity is connect with the cavity
Gas pipeline, the pressure regulator on the gas pipeline and connect with the gas pipeline and with pressure regulator electricity
Property connection above-mentioned capacitance diaphragm gauge；
The capacitance diaphragm gauge feeds back to pressure regulator for the vacuum pressure value in test chamber body；
The pressure regulator is for being adjusted the vacuum pressure value in cavity.
The dry etching apparatus chamber pressure test system further includes the vacuum pump being connect with the gas pipeline end.
The dry etching apparatus chamber pressure test system further includes being set on the gas pipeline and positioned at cavity and pressure
Isolating valve between draught control mechanism.
Beneficial effects of the present invention：The present invention capacitance diaphragm gauge include：Adjacent first chamber and the second chamber
Room, the measuring electrode in the first chamber, is set to the pressure diaphragm between the first chamber and second chamber
In the first chamber and with the spaced reference electrode of measuring electrode and the filter screen in the second chamber；Institute
State gas of second cavity for being passed through dry etching apparatus cavity；The filter screen is used to adsorb the processing procedure of dry etching apparatus cavity
By-product and cavity pollution object prevent processing by products and cavity pollution object to be attached in pressure diaphragm, cause pressure every
Permanent deformation or damaged occurs for film, improves the measuring accuracy of capacitance diaphragm gauge, extends making for capacitance diaphragm gauge
With the service life, ensure the vacuum pressure value stabilization of dry etching apparatus cavity, improves etching rate homogeneity.The dry etching apparatus of the present invention
Chamber pressure tests system, is matched with pressure regulator by capacitance diaphragm gauge, always by the vacuum pressure of cavity
Value maintains a standard value, ensures the vacuum pressure value stabilization of cavity, improves etching rate homogeneity.
Description of the drawings
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with the detailed of the present invention
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
In attached drawing,
Fig. 1 is the schematic diagram of the capacitance diaphragm gauge of the present invention；
Fig. 2 is that the dry etching apparatus chamber pressure of the present invention tests the schematic diagram of system.
Specific implementation mode
Further to illustrate the technological means and its effect of the invention taken, below in conjunction with the preferred implementation of the present invention
Example and its attached drawing are described in detail.
Referring to Fig. 1, the capacitance diaphragm gauge of the present invention includes：Adjacent first chamber 11 and second chamber 12,
Pressure diaphragm 13, the measuring electrode in the first chamber 11 between the first chamber 11 and second chamber 12
14, it is set in the first chamber 11 and with 14 spaced reference electrode 15 of measuring electrode and set on the second chamber
Filter screen 16 in 12；
Second cavity 12 is used to be passed through the gas of dry etching apparatus cavity；
The filter screen 16 is used to adsorb the processing by products and cavity pollution object of dry etching apparatus cavity, prevents processing procedure
By-product and cavity pollution object are attached in pressure diaphragm 13.
It should be noted that the pressure diaphragm 13 separates first chamber 11 and second chamber 12, the two is made not connect
It is logical, there is a reference pressure P1, the second chamber 12 to be passed through the gas of dry etching apparatus cavity, make in the first chamber 11
There is a test pressure P2 in second chamber 12, when reference pressure P1 and test pressure P2 has pressure difference, pressure diaphragm 13
Deformation quantity is will produce, when pressure difference is bigger, the deformation quantity of pressure diaphragm 13 is also bigger.When the second chamber 12 is passed through dry etching
Before the gas for losing equipment cavity, pressure diaphragm 13 does not generate deformation quantity, between the measuring electrode 14 and pressure diaphragm 13
Distance is equal to the distance between the reference electrode 15 and pressure diaphragm 13, and one is generated between reference electrode 15 and pressure diaphragm 13
Reference capacitance value, the then generation of pressure diaphragm 13 deformation quantity, the generation of the distance between pressure diaphragm 13 and measuring electrode 14 change,
One is generated between measuring electrode 14 and pressure diaphragm 13 and measures capacitance, is worth to reference capacitance by comparing capacitance is measured
One capacitance variations value, and then the test pressure P2 suffered by pressure diaphragm 13 can be obtained by the capacitance variations value, so as to
Learn the vacuum pressure value in dry etching apparatus cavity.And since dry etching apparatus cavity will produce processing procedure pair during processing procedure
Product and cavity pollution object adsorb processing by products and cavity pollution object by filter screen 16, prevent processing by products with
And cavity pollution object is attached to 13 surface of pressure diaphragm, causes pressure diaphragm 13 that permanent deformation or damaged occurs, improves condenser type
The measuring accuracy of diaphragm gauge extends the service life of capacitance diaphragm gauge, ensures the vacuum of dry etching apparatus cavity
Pressure value stabilization improves etching rate homogeneity.
Further, the capacitance diaphragm gauge further includes being set in the second chamber 12 and being located at pressure diaphragm
Heater circuit 17 between 13 and filter screen 16, the heater circuit 17 are used to heat second chamber 12, while to inhaling
The processing by products and cavity pollution object for the dry etching apparatus cavity being attached on filter screen 16 are heated, and processing processing procedure is reached
The purpose of by-product and cavity pollution object.
Preferably, the material of the filter screen 16 is polytetrafluoroethylene (PTFE).
Preferably, the material of the pressure diaphragm 13 is inconel, since the gas of dry etching apparatus cavity is usual
With corrosivity, the service life of pressure diaphragm 13 is can further improve using corrosion resistant inconel.
Preferably, the thickness of the pressure diaphragm 13 is 10um~90um, even if when the deformation quantity very little of pressure diaphragm 13,
Also the vacuum pressure value in dry etching apparatus cavity can accurately be measured.
Referring to Fig. 2, based on above-mentioned capacitance diaphragm gauge, the present invention also provides a kind of dry etching apparatus cavity pressures
Force test system, including：Cavity 100, is set on the gas pipeline 200 gas pipeline 200 being connect with the cavity 100
Pressure regulator 300 and the above-mentioned capacitance that connect with the gas pipeline 200 and be electrically connected with pressure regulator 300
Formula diaphragm gauge 400；
The capacitance diaphragm gauge 400 is used to test the vacuum pressure value in cavity 100, and feeds back to pressure adjusting
Device 300；
The pressure regulator 300 is for being adjusted the vacuum pressure value in cavity 100.
It should be noted that when the capacitance diaphragm gauge 400 tests the vacuum pressure value in cavity 100, by
Processing by products and cavity pollution object are will produce during processing procedure in cavity 100, and processing procedure by-product is adsorbed by filter screen 16
Object and cavity pollution object prevent processing by products and cavity pollution object to be attached to 13 surface of pressure diaphragm, cause pressure every
Permanent deformation or damaged occurs for film 13, improves the measuring accuracy of capacitance diaphragm gauge 400, extends capacitance diaphragm gauge
400 service life；And it is matched with pressure regulator 300 by capacitance diaphragm gauge 400, always by cavity 100
Vacuum pressure value maintain a standard value, ensure the vacuum pressure value stabilization of cavity 100, improve etching rate homogeneity.
Specifically, the dry etching apparatus chamber pressure test system further includes being connect with 200 end of the gas pipeline
Vacuum pump (Vacuum pump) 500, for persistently being vacuumized to cavity 100, while can also take away and be adsorbed on filter screen 16
Cavity 100 processing by products and cavity pollution object.
Specifically, the dry etching apparatus chamber pressure test system further includes being set on the gas pipeline 200 simultaneously position
Isolating valve (Isolation valve) 600 between cavity 100 and pressure regulator 300, for real to gas pipeline 200
Existing switching function, such as tested to the vacuum pressure value in cavity 100 when capacitance diaphragm gauge 400 and maintain a standard value
When, isolating valve 600 is closed so that the closing of gas pipeline 200, keeps the vacuum pressure value in cavity 100, when capacitance diaphragm is true
When 400 test of sky meter is higher or lower than a standard value to the vacuum pressure value in cavity 100, isolating valve 600 is opened so that gas
Pipeline 200 is opened, and the vacuum pressure value in cavity 100 is adjusted to standard value by pressure regulator 300.
In conclusion the capacitance diaphragm gauge of the present invention includes：Adjacent first chamber and second chamber is set to institute
It states the pressure diaphragm between first chamber and second chamber, the measuring electrode in the first chamber, be set to described first
In chamber and with the spaced reference electrode of measuring electrode and the filter screen in the second chamber；Second chamber
Body is used to be passed through the gas of dry etching apparatus cavity；The filter screen for adsorb the processing by products of dry etching apparatus cavity with
And cavity pollution object, it prevents processing by products and cavity pollution object to be attached in pressure diaphragm, pressure diaphragm is caused to occur forever
Deformation long is damaged, improves the measuring accuracy of capacitance diaphragm gauge, extends the service life of capacitance diaphragm gauge, protects
The vacuum pressure value stabilization of dry etching apparatus cavity is demonstrate,proved, etching rate homogeneity is improved.The dry etching apparatus chamber pressure of the present invention
Test system is matched with pressure regulator by capacitance diaphragm gauge, always maintains the vacuum pressure value of cavity
One standard value ensures the vacuum pressure value stabilization of cavity, improves etching rate homogeneity.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding change and deformations are made in design, and all these change and distortions should all belong to the claims in the present invention
Protection domain.
Claims (8)
1. a kind of capacitance diaphragm gauge, which is characterized in that including：Adjacent first chamber (11) and second chamber (12),
Pressure diaphragm (13) between the first chamber (11) and second chamber (12) is set in the first chamber (11)
Measuring electrode (14), be set to the first chamber (11) in and with measuring electrode (14) spaced reference electrode (15) and
Filter screen (16) in the second chamber (12)；
Second cavity (12) is used to be passed through the gas of dry etching apparatus cavity；
The filter screen (16) is used to adsorb the processing by products and cavity pollution object of dry etching apparatus cavity.
2. capacitance diaphragm gauge as described in claim 1, which is characterized in that further include being set to the second chamber (12)
In and the heater circuit (17) between pressure diaphragm (13) and filter screen (16).
3. capacitance diaphragm gauge as described in claim 1, which is characterized in that the material of the filter screen (16) is poly- four
Vinyl fluoride.
4. capacitance diaphragm gauge as described in claim 1, which is characterized in that the material of the pressure diaphragm (13) is chromium
Dilval.
5. capacitance diaphragm gauge as described in claim 1, which is characterized in that the thickness of the pressure diaphragm (13) is
10um~90um.
6. a kind of dry etching apparatus chamber pressure tests system, which is characterized in that including：Cavity (100) and the cavity
(100) connect gas pipeline (200), be set to the gas pipeline (200) on pressure regulator (300) and with it is described
The capacitance diaphragm vacuum as described in claim 1 that gas pipeline (200) is connected and is electrically connected with pressure regulator (300)
It counts (400)；
The capacitance diaphragm gauge (400) is used to test the vacuum pressure value in cavity (100), and feeds back to pressure adjusting
Device (300)；
The pressure regulator (300) is for being adjusted the vacuum pressure value in cavity (100).
7. dry etching apparatus chamber pressure as claimed in claim 6 tests system, which is characterized in that further include and the gas
The vacuum pump (500) of pipeline (200) end connection.
8. dry etching apparatus chamber pressure as claimed in claim 6 tests system, which is characterized in that further include being set to the gas
Isolating valve (600) on body pipeline (200) and between cavity (100) and pressure regulator (300).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810368641.0A CN108593198A (en) | 2018-04-23 | 2018-04-23 | Capacitance diaphragm gauge and dry etching apparatus chamber pressure test system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810368641.0A CN108593198A (en) | 2018-04-23 | 2018-04-23 | Capacitance diaphragm gauge and dry etching apparatus chamber pressure test system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108593198A true CN108593198A (en) | 2018-09-28 |
Family
ID=63614190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810368641.0A Pending CN108593198A (en) | 2018-04-23 | 2018-04-23 | Capacitance diaphragm gauge and dry etching apparatus chamber pressure test system |
Country Status (1)
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| CN (1) | CN108593198A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114001858A (en) * | 2020-07-28 | 2022-02-01 | 中微半导体设备(上海)股份有限公司 | Capacitance type film vacuum gauge, plasma reaction device and film preparation method |
| CN114964349A (en) * | 2021-02-19 | 2022-08-30 | 中国科学院微电子研究所 | Chamber pressure measuring device, measuring method and semiconductor manufacturing equipment |
| EP4242633A3 (en) * | 2022-02-16 | 2023-11-08 | The Boeing Company | System and method for concurrently exposing a test specimen to a first environment and a second environment |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114001858A (en) * | 2020-07-28 | 2022-02-01 | 中微半导体设备(上海)股份有限公司 | Capacitance type film vacuum gauge, plasma reaction device and film preparation method |
| CN114001858B (en) * | 2020-07-28 | 2024-04-05 | 中微半导体设备(上海)股份有限公司 | Capacitive film vacuum gauge, plasma reaction device and film preparation method |
| CN114964349A (en) * | 2021-02-19 | 2022-08-30 | 中国科学院微电子研究所 | Chamber pressure measuring device, measuring method and semiconductor manufacturing equipment |
| EP4242633A3 (en) * | 2022-02-16 | 2023-11-08 | The Boeing Company | System and method for concurrently exposing a test specimen to a first environment and a second environment |
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Application publication date: 20180928 |
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