CN108574027B - Gallium nitride-based LED chip and manufacturing method thereof - Google Patents
Gallium nitride-based LED chip and manufacturing method thereof Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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Abstract
The invention provides a gallium nitride-based LED chip and a manufacturing method thereof, which are characterized by comprising the following steps: the semiconductor device comprises a substrate, an N-type semiconductor layer formed on the substrate, an active layer formed on the N-type semiconductor layer, a P-type intermediate layer formed on the active layer, an electron blocking layer formed on the P-type intermediate layer, a P-type semiconductor layer formed on the electron blocking layer, and an N-type electrode and a P-type electrode which are respectively arranged on the N-type semiconductor layer and the P-type semiconductor layer; the P-type interlayer comprises an InGaN layer, an InAlGaN layer and a GaN layer which are sequentially stacked from bottom to top; and each of the InGaN layer, the InAlGaN layer and the GaN layer is doped with at least one P-type dopant of Mg, Zn, Be, Ca, Sr and Ba. The P-type middle layer with the multi-layer structure and different doping concentrations and energy band gaps can improve hole injection efficiency, relieve stress generated by the difference of lattice constants of the interfaces of the active layer and the electron blocking layer and improve quantum efficiency of the LED chip in a working state.
Description
Technical Field
The invention belongs to the field of LED chip manufacturing, and particularly relates to a gallium nitride-based LED chip with a P-type middle layer of a multilayer structure and a manufacturing method thereof.
Background
In the semiconductor light emitting element, when a forward voltage is applied to the light emitting element, holes in the P-type semiconductor layer and electrons in the N-type semiconductor layer are combined, and light having a wavelength corresponding to the band gap energy is emitted.
Gallium nitride-based semiconductor ((Al)xInyGa1-x-yN, 0. ltoreq. x.ltoreq.1, 0. ltoreq. y.ltoreq.1, 0. ltoreq. x + y. ltoreq.1)) emits light of a plurality of wavelengths by changing the ratio of aluminum, indium, and gallium, and is therefore attracting attention as a material for a light-emitting element.
However, when a high current is injected into the light emitting diode, there is a problem of a drop in luminous efficiency (efficienccydrop). The efficiency drop (efficiency drop) is caused by recombination (recombination) based on gallium nitride-based semiconductor crystal defects or current leakage. The current leakage phenomenon is a phenomenon in which, when a high current is injected, electrons in the negative electrode pass through a Multiple Quantum Well (MQW) to reach the positive electrode, and are recombined with holes without emitting light.
In order to prevent current leakage, an electron blocking layer (electron blocking layer) is formed between the P-type gallium nitride-based semiconductor layer and the multiple quantum well structure. The electron blocking layer is generally AlGaN with high band gap energy, but the doping of the P-type dopant is hindered by Al atoms. The electron blocking layer may reduce the hole injection efficiency. In addition, polarization may be formed due to a lattice constant mismatch between the multiple quantum well structure including indium and the electron blocking layer including aluminum. Polarization distorts the distribution of electrons and holes, causing the internal quantum efficiency to be reduced.
Disclosure of Invention
Aiming at the defects existing in the prior art and the technical defects which are difficult to solve, the invention adopts the following technical scheme:
a gallium nitride-based LED chip, comprising: the semiconductor device comprises a substrate, an N-type semiconductor layer formed on the substrate, an active layer formed on the N-type semiconductor layer, a P-type intermediate layer formed on the active layer, an electron blocking layer formed on the P-type intermediate layer, a P-type semiconductor layer formed on the electron blocking layer, and an N-type electrode and a P-type electrode which are respectively arranged on the N-type semiconductor layer and the P-type semiconductor layer; the P-type interlayer comprises an InGaN layer, an InAlGaN layer and a GaN layer which are sequentially stacked from bottom to top; and each of the InGaN layer, the InAlGaN layer and the GaN layer is doped with at least one P-type dopant of Mg, Zn, Be, Ca, Sr and Ba.
Preferably, the InGaN layer is doped with a lower concentration of P-type dopants than the InAlGaN and GaN layers; the GaN layer is doped with a higher concentration of P-type dopants than the InGaN layer and InAlGaN layer.
1. The gallium nitride-based LED chip according to claim 2, wherein: the InGaN layer has a P-type dopant concentration of 1 × 1017cm-3To 1X 1018cm-3The concentration of the P-type dopant of the InAlGaN layer is 1 multiplied by 1018cm-3To 5X 1018cm-3The GaN layer has a P-type dopant concentration of 5 × 1018cm-3To 1X 1019cm-3。
Preferably, the thickness of each of the InGaN layer, InAlGaN layer, and GaN layer is 1nm to 10 nm.
Preferably, the InGaN layer contains 0.1 to 1 mass% of indium; the InAlGaN layer contains indium with the mass fraction of 0.1-1% and aluminum with the mass fraction of 0.1-3%.
Preferably, the N-type semiconductor layer is a gallium nitride semiconductor doped with an N-type dopant; the P-type semiconductor is a gallium nitride-based semiconductor doped with a P-type dopant.
Preferably, a u-GaN layer is formed between the substrate and the N-type semiconductor layer.
Preferably, a transparent conducting layer A is formed between the N-type semiconductor layer and the N-type electrode; and a transparent conductive layer B is formed between the P-type semiconductor layer and the P-type electrode.
A manufacturing method of a gallium nitride-based LED chip is characterized by comprising the following steps:
step 1: forming an N-type semiconductor layer on a substrate;
step 2: forming an active layer on the N-type semiconductor layer;
and step 3: forming a P-type interlayer on the active layer; the forming of the P-type middle layer comprises sequentially forming an InGaN layer, an InAlGaN layer and a GaN layer from bottom to top; each of the InGaN layer, the InAlGaN layer and the GaN layer is doped with at least one P-type dopant of Mg, Zn, Be, Ca, Sr and Ba;
and 4, step 4: forming an electron blocking layer on the P-type interlayer;
and 5: forming a P-type semiconductor layer on the electron blocking layer;
step 6: an N-type electrode and a P-type electrode are disposed on the N-type semiconductor layer and the P-type semiconductor layer, respectively.
Preferably, the InGaN layer has a P-type dopant concentration of 1 × 1017cm-3To 1X 1018cm-3The concentration of the P-type dopant of the InAlGaN layer is 1 multiplied by 1018cm-3To 5X 1018cm-3The GaN layer has a P-type dopant concentration of 5 × 1018cm-3To 1X 1019cm-3(ii) a The InGaN layer contains indium with a mass fraction of 0.1% to 1%(ii) a The InAlGaN layer contains indium with the mass fraction of 0.1-1% and aluminum with the mass fraction of 0.1-3%.
According to the LED chip provided by the invention and the preferred scheme, the multilayer structure (the P-type intermediate layer) with the P-type dopant is additionally arranged, so that the hole injection efficiency provided from the P-type semiconductor to the active layer is improved, and the operating voltage is reduced.
The GaN layer adjacent to the electron blocking layer is doped with a P-type dopant with high concentration, and the InGaN layer adjacent to the active layer is doped with a P-type dopant with low concentration, so that the P-type dopant is prevented from diffusing to the active layer.
Stress caused by the difference between the lattice constant of the active layer and the electron blocking layer is released by the InGaN layer and the InAlGaN layer (containing a small amount of indium atoms), so that leakage current is reduced, and the efficiency drop (efficienccydrop) phenomenon is reduced.
In addition, the InAlGaN layer has a high energy band gap to prevent the overflow of electrons (Over-flow).
The P-type interlayer having a multi-layered structure with different doping concentrations and energy band gaps can improve hole injection efficiency and relieve stress generated by a difference in lattice constants of interfaces of the active layer and the electron blocking layer.
The above effects contribute to more appropriate solution of the problems mentioned in the background art, and improve the quantum efficiency of the LED chip in the operating state.
Drawings
The invention is described in further detail below with reference to the following figures and detailed description:
FIG. 1 is a schematic cross-sectional view of an embodiment of the present invention;
FIG. 2 is a schematic diagram of an energy bandgap of an embodiment of the present invention;
FIG. 3 is a flow chart of a method of manufacturing an embodiment of the present invention;
in the figure: 110 a substrate; 120N-type semiconductor layer; 130 active layer; 140, a P-type interlayer; 141 InGaN layer; 143 InAlGaN layer; 145: a GaN layer; 150, an electron blocking layer; 160, P-type semiconductor layer; 171N-type electrode; 173, P-type electrode.
Detailed Description
In order to make the features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail as follows:
fig. 1 is a cross-sectional view illustrating a light emitting diode according to one embodiment of the present invention.
As shown in fig. 1, an embodiment of the present invention includes: the semiconductor device includes a substrate 110, an N-type semiconductor layer 120 formed on the substrate 110, an active layer 130 formed on the N-type semiconductor layer, a P-type interlayer 140 formed on the active layer 130, an electron blocking layer 150 formed on the P-type interlayer 140, a P-type semiconductor layer 160 formed on the electron blocking layer 150, an N-type electrode electrically connected to the N-type semiconductor layer 120, and a P-type electrode 173 electrically connected to the P-type semiconductor layer 160.
The P-type interlayer 140 may include a multilayer structure of an InGaN layer 141, an InAlGaN layer 143, and a GaN layer 145, which are sequentially stacked.
In the present embodiment, the substrate 110 may be any known material suitable for a gallium nitride light emitting diode substrate. In general, the substance that can grow the gallium nitride-based semiconductor may be one of SiC, Si, GaN, ZnO, GaAs, GaP, LiAl2O3, BN, and AlN, but is not limited thereto. High-quality gallium nitride-based semiconductor materials can be grown on the substrate 110, and in order to further improve the light extraction efficiency of the light emitting diode through light diffusion, a patterned substrate can be used as the substrate 110 in this embodiment.
An N-type semiconductor layer 120 is formed on the substrate 110. The N-type semiconductor layer 120 may be a gallium nitride semiconductor doped with an N-type dopant. The gallium nitride-based semiconductor is AlxInyGa1-x-yN (x is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and x + y is more than or equal to 0 and less than or equal to 1), and the N-type dopant can be silicon (Si), germanium (Ge) and tin (Sn).
The active layer 130 is formed on the N-type semiconductor layer 120. The active layer 130 has a single quantum well structure or a multiple quantum well structure. The active layer 130 of the multiple quantum well structure preferred in the present embodiment may be a structure in which large-bandgap gallium nitride-based semiconductor layers and small-bandgap gallium nitride-based semiconductor layers are alternately stacked.
As a preferable aspect, in the present embodiment, a u-GaN layer (not shown) may be formed between the substrate 110 and the N-type semiconductor layer 120. The u-GaN layer is an undoped gallium nitride semiconductor layer, which is beneficial to growing a defect-free epitaxial layer structure.
In the present embodiment, the P-type interlayer 140 is formed on the active layer 130. The P-type interlayer 140 is specifically a multilayer structure including an InGaN layer 141, an InAlGaN layer 143, and a GaN layer 145 stacked in this order.
The P-type interlayer 140 is doped with a P-type dopant. The P-type dopant may Be one or more of magnesium (Mg), zinc (Zn), beryllium (Be), strontium (Sr), and barium (Ba).
The InGaN layer 141 is doped with a P-type dopant with a lower concentration than the InAlGaN layer 143 and the GaN layer 145, and the GaN layer 145 is doped with a P-type dopant with a higher concentration than the InGaN layer 141 and the InAlGaN layer 143.
As a preferable doping scheme with better effect, the P-type dopant concentration of the InGaN layer 141 is set to 1 × 1017cm-3To 1X 1018cm-3In between, the P type dopant concentration of InAlGaN layer 143 is set to 1 × 1018cm-3To 5X 1018cm-3In between, the P-type dopant concentration of GaN layer 145 is set to 5 × 1018cm-3To 1X 1019cm-3In the meantime.
The factors for this particular arrangement are: although the P-type interlayer 140 doped with the P-type dopant can improve the efficiency of injecting holes into the active layer 130, when the P-type dopant diffuses into the quantum well of the active layer 130, there may be a case where the light emitting characteristics are deteriorated. Therefore, the InGaN layer 141 near the active layer 130 is provided with a low concentration of P-type dopant, and the GaN layer 145 near the electron blocking layer 150 is provided with a high concentration of P-type dopant, thereby improving the hole injection efficiency and achieving the effect of preventing the P-type dopant from diffusing into the active layer 130.
In this embodiment, the InGaN layer 141 contains 0.1% to 1% indium, the InAlGaN layer 143 contains 0.1% to 1% indium, and 0.1% to 3% aluminum.
The piezoelectric polarization phenomenon caused by the difference in lattice constant may be generated at the interface with the electron blocking layer 150 due to the active layer 130 containing indium at a high concentration. Therefore, by forming a GaN layer while containing a small amount of indium (In) In the InGaN layer 141 and InAlGaN layer 143 of the P-type intermediate layer 140, stress due to a difference In lattice constant can be relieved.
The InAlGaN layer 143 containing aluminum has a wide energy band gap to prevent the overflow of electrons and enables the combination of electrons and holes in the active layer 130.
The InGaN layer 141, the InAlGaN layer 143, and the GaN layer 145 have thicknesses of 1nm to 10nm, respectively.
In the present embodiment, the electron blocking layer 150 is formed on the P-type interlayer 140. The electron blocking layer 150 has a larger band gap than the active layer 130, thereby preventing electrons from being excessively injected from the N-type semiconductor layer 120 to the P-type semiconductor layer 160. In a preferred embodiment of the present invention, the electron blocking layer 150 is Al doped with P-type dopantxGa1-xN(0<x is less than or equal to 1). The electron blocking layer 150 is a bulk layer having the same composition or a multi-layer structure having different Al compositions.
The P-type semiconductor layer 160 is formed on the electron blocking layer 150. The P-type semiconductor layer 160 is a gallium nitride-based semiconductor doped with a P-type dopant. The gallium nitride-based semiconductor may be AlxInyGa1-x-yN(0≤x≤1,0≤y≤1,0≤x+y≤1)。
As shown in fig. 3, the manufacturing method of the present embodiment includes the following basic steps:
step 1: forming an N-type semiconductor layer on a substrate;
step 2: forming an active layer on the N-type semiconductor layer;
and step 3: forming a P-type interlayer on the active layer; the formation of the P-type intermediate layer comprises the steps of sequentially forming an InGaN layer, an InAlGaN layer and a GaN layer from bottom to top; each of the InGaN layer, the InAlGaN layer and the GaN layer is doped with at least one P-type dopant of Mg, Zn, Be, Ca, Sr and Ba;
and 4, step 4: forming an electron blocking layer on the P-type interlayer;
and 5: forming a P-type semiconductor layer on the electron blocking layer;
step 6: an N-type electrode and a P-type electrode are disposed on the N-type semiconductor layer and the P-type semiconductor layer, respectively.
The N-type semiconductor layer 120, the active layer 130, the P-type intermediate layer 140, the electron blocking layer 150, and the P-type semiconductor layer 160 may be formed by one or more of MOCVD, CVD, PECVD, MBE, HVPE, and Sputtering. The N-type semiconductor layer 120, the active layer 130, the P-type interlayer 140, the electron blocking layer 150, and the P-type semiconductor layer 160 may be grown and doped by changing the raw material ratio in the same reaction chamber.
The N-type electrode 171 is electrically connected to the N-type semiconductor layer 120, and the P-type electrode 173 is electrically connected to the P-type semiconductor layer 160.
The N-type electrode 171 and the P-type electrode 173 may be conductive materials. For example, Si, Au, Pt, Mg, Zn, Hf, Ta, W, Ti, Ag, Cr, Mo, Nb, Al, Ni, Cu or alloys of these metals, but is not limited thereto.
The N-type electrode 171 and the P-type electrode 173 may be formed by thermal evaporation (thermal evaporation), E-beam evaporation (E-beam evaporation), or sputtering, but are not limited thereto.
A transparent conductive layer (not shown) may be selectively formed between the P-type electrode 173 and the P-type semiconductor layer 160. The transparent conductive layer may be a conductive material having high light transmittance, or may be a very thin metal film or a metal oxide layer.
In a lower region of the P-type electrode 173 between the P-type semiconductor layer 160 and the transparent conductive layer, a current blocking layer (not shown) may be formed to enable better performance of the LED.
Fig. 2 is a schematic diagram of the energy bandgap of a light emitting diode made in accordance with one embodiment of the present invention.
As shown in fig. 2, the P-type interlayer 140 includes an InGaN layer 141, an InAlGaN layer 143, and a GaN layer 145, each doped with a P-type dopant, stacked in this order. The multilayer structure constituting the P-type intermediate layer 140 has the InGaN layer 141 with the smallest bandgap, the InAlGaN layer 143 with the largest bandgap, and the GaN layer 145 with a larger bandgap than the InGaN layer 141 and a smaller bandgap than the InAlGaN layer 143.
The InGaN141 layer having a smaller band gap than the barrier layer of the active layer 130 and the P-type semiconductor layer 160 can effectively inject holes into the active layer 130.
The InAlGaN layer 143 has a smaller band gap than the electron blocking layer 150 formed on the P-type interlayer 140, but larger band gap than the GaN layer 145 and the P-type semiconductor layer 160. This serves to once block electrons from being injected into GaN layer 145 and P-type semiconductor layer 160, and causes non-luminescent recombination.
The P-type interlayer 140 having a multi-layered structure like this, which has different band gaps, not only improves the efficiency of holes being injected into the active layer, but also prevents electrons from overflowing, and relieves the compressive stress caused by the difference in lattice constants.
The present invention is not limited to the preferred embodiments, and all other gallium nitride based LED chips and manufacturing methods can be obtained by anyone with the benefit of the present invention, and all equivalent changes and modifications made within the scope of the present invention shall be covered by the present invention.
Claims (8)
1. A gallium nitride-based LED chip, comprising: the semiconductor device comprises a substrate, an N-type semiconductor layer formed on the substrate, an active layer formed on the N-type semiconductor layer, a P-type intermediate layer formed on the active layer, an electron blocking layer formed on the P-type intermediate layer, a P-type semiconductor layer formed on the electron blocking layer, and an N-type electrode and a P-type electrode which are respectively arranged on the N-type semiconductor layer and the P-type semiconductor layer; the P-type interlayer comprises an InGaN layer, an InAlGaN layer and a GaN layer which are sequentially stacked from bottom to top; each of the InGaN layer, the InAlGaN layer and the GaN layer is doped with at least one P-type dopant of Mg, Zn, Be, Ca, Sr and Ba; the InGaN layer is doped with a lower concentration of P-type dopants than the InAlGaN and GaN layers; the GaN layer is doped with a higher concentration of P-type dopants than the InGaN layer and InAlGaN layer.
2. The gallium nitride-based LED chip according to claim 1, wherein: the InGaN layer has a P-type dopant concentration of 1 × 1017cm-3To 1X 1018cm-3The concentration of the P-type dopant of the InAlGaN layer is 1 multiplied by 1018cm-3To 5X 1018cm-3The GaN layer has a P-type dopant concentration of 5 × 1018cm-3To 1X 1019cm-3。
3. The gallium nitride-based LED chip according to claim 1, wherein: the thickness of each of the InGaN layer, the InAlGaN layer and the GaN layer is 1nm to 10 nm.
4. The gallium nitride-based LED chip according to claim 1, wherein: the InGaN layer contains indium with a mass fraction of 0.1% to 1%; the InAlGaN layer contains indium with the mass fraction of 0.1-1% and aluminum with the mass fraction of 0.1-3%.
5. The gallium nitride-based LED chip according to claim 1, wherein: the N-type semiconductor layer is a gallium nitride semiconductor doped with an N-type dopant; the P-type semiconductor is a gallium nitride-based semiconductor doped with a P-type dopant.
6. The gallium nitride-based LED chip according to claim 1, wherein: and a u-GaN layer is formed between the substrate and the N-type semiconductor layer.
7. The gallium nitride-based LED chip according to claim 1, wherein: a transparent conducting layer A is formed between the N-type semiconductor layer and the N-type electrode; and a transparent conductive layer B is formed between the P-type semiconductor layer and the P-type electrode.
8. A manufacturing method of a gallium nitride-based LED chip is characterized by comprising the following steps:
step 1: forming an N-type semiconductor layer on a substrate;
step 2: forming an active layer on the N-type semiconductor layer;
and step 3: forming a P-type interlayer on the active layer; the forming of the P-type middle layer comprises sequentially forming an InGaN layer, an InAlGaN layer and a GaN layer from bottom to top; each of the InGaN layer, the InAlGaN layer and the GaN layer is doped with at least one P-type dopant of Mg, Zn, Be, Ca, Sr and Ba;
and 4, step 4: forming an electron blocking layer on the P-type interlayer;
and 5: forming a P-type semiconductor layer on the electron blocking layer;
step 6: respectively arranging an N-type electrode and a P-type electrode on the N-type semiconductor layer and the P-type semiconductor layer;
the InGaN layer has a P-type dopant concentration of 1 × 1017cm-3To 1X 1018cm-3The concentration of the P-type dopant of the InAlGaN layer is 1 multiplied by 1018cm-3To 5X 1018cm-3The GaN layer has a P-type dopant concentration of 5 × 1018cm-3To 1X 1019cm-3(ii) a The InGaN layer contains indium with a mass fraction of 0.1% to 1%; the InAlGaN layer contains indium with the mass fraction of 0.1-1% and aluminum with the mass fraction of 0.1-3%.
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