CN108573200B - Package structure and method for fabricating the same - Google Patents
Package structure and method for fabricating the same Download PDFInfo
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- CN108573200B CN108573200B CN201710168798.4A CN201710168798A CN108573200B CN 108573200 B CN108573200 B CN 108573200B CN 201710168798 A CN201710168798 A CN 201710168798A CN 108573200 B CN108573200 B CN 108573200B
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- electronic element
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- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000010410 layer Substances 0.000 claims abstract description 103
- 239000011241 protective layer Substances 0.000 claims abstract description 29
- 238000004806 packaging method and process Methods 0.000 claims abstract description 18
- 229920000642 polymer Polymers 0.000 claims description 25
- 238000002161 passivation Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000005538 encapsulation Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 abstract 1
- 239000004642 Polyimide Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 230000008054 signal transmission Effects 0.000 description 4
- 239000008393 encapsulating agent Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000000748 compression moulding Methods 0.000 description 2
- 229920002577 polybenzoxazole Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Human Computer Interaction (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Dicing (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
A packaging structure and its preparation method, combine an electronic component with protective layer on it on a bearing part, and then coat the side of the electronic component and the protective layer with the packaging layer, and make the upper surface of the protective layer expose the packaging layer, so in the subsequent process of singulating, the cutter does not need to pass through the protective layer, therefore can avoid the problem that the edge of the packaging structure produces the deckle edge.
Description
Technical Field
The present invention relates to a package structure, and more particularly, to a package structure of a fingerprint sensor.
Background
With the increase of the attention of consumers to privacy, many advanced electronic products have been equipped with user identification systems to increase the security of data in the electronic products, so the research and development and design of identification systems become one of the major development directions of the electronic industry along with the demands of consumers.
In the biometric identification system, the biometric identification system can be broadly divided into physiological characteristics (e.g. fingerprint, pupil, face, voice print) identification and behavior characteristics (e.g. signature, voice) identification for identifying a living being according to different identification marks, wherein the biometric identification system for identifying the physiological characteristics has the advantages of singleness, high anti-counterfeiting degree, convenience and the like, and the technology is mature and widely applied to personal identification and confirmation, so the technology is widely accepted by consumers.
In the existing fingerprint identification device, the scanning mode of the fingerprint is divided into an optical fingerprint identification device for scanning the fingerprint pattern and a capacitive fingerprint identification device for detecting the micro-charge in the fingerprint pattern, wherein the capacitive fingerprint identification device can be divided into a passive type and an active type.
In the existing passive capacitance type fingerprint identification technology, the output of tiny voltage difference is achieved through the interaction relationship of parasitic capacitance between a finger of a user and a fingerprint identification device, but the existing passive capacitance type fingerprint identification device is easy to cause poor identification accuracy due to noise interference. In the existing active capacitive fingerprint identification technology, a pulse wave signal is output to a finger of a user, and then the pulse wave signal transmitted by the finger is received and identified in a finger contact area, so that fingerprint information is obtained.
As shown in fig. 1, in a conventional package structure 1 of a capacitive fingerprint sensor (fingerprint sensor), a sensing chip 11 having a sensing surface 11a is disposed on a substrate 10, an encapsulant 13 covers the sensing chip 11 and exposes the sensing surface 11a, a protective film 12 is attached on the sensing surface 11a and the encapsulant 13 to prevent the sensing chip 11 from being damaged, and finally a singulation process is performed. Here, the user can make the sensing chip 11 sense the fingerprint by touching and sliding (swipe) the protection film 12 on the sensing surface 11 a.
However, in the fabrication of the conventional package structure 1, during the singulation process, a cutter (not shown) needs to cut through the encapsulant 13 and the protective film 12, so that the friction force applied to the cutter is different, which hinders the smoothness of cutting, and thus the edge of the package structure 1 has a burr R.
Therefore, how to overcome the above problems of the prior art has become an issue to be solved.
Disclosure of Invention
In view of the above-mentioned shortcomings in the prior art, the present invention provides an electronic package structure and a method for fabricating the same, which can avoid the problem of generating burrs on the edge of the package structure.
The packaging structure of the invention comprises: a carrier; the electronic element is provided with a sensing surface and a non-sensing surface which are opposite, and the electronic element is combined with the non-sensing surface and is electrically connected with the bearing piece; a protective layer formed on the sensing surface of the electronic element; and the packaging layer is formed on the bearing piece to coat the electronic element and the side surface of the protective layer, and the packaging layer is exposed out of the upper surface of the protective layer.
The invention also provides a manufacturing method of the packaging structure, which comprises the following steps: providing at least one electronic element with a sensing surface and a non-sensing surface which are opposite, wherein a protective layer is combined on the sensing surface; combining the electronic element with the non-sensing surface and electrically connecting the electronic element with a bearing piece; and forming a packaging layer on the bearing piece to coat the electronic element and the side surface of the protective layer, and exposing the packaging layer outside the upper surface of the protective layer.
In the foregoing manufacturing method, the manufacturing process of the electronic device includes: providing a wafer containing a plurality of electronic elements, wherein the protective layer is combined on the whole surface of the wafer; and performing a singulation process to obtain a plurality of electronic elements with the protective layer.
In the foregoing manufacturing method, the process of the passivation layer includes: forming a first insulating layer on the electronic element, wherein a plurality of concave parts are formed in the first insulating layer; and forming a second insulating layer in the recess.
The aforementioned method further comprises performing a singulation process after the package layer is formed.
In the package structure and the method for fabricating the same, the material forming the passivation layer is a polymer having a dielectric constant of at least 9. For example, the polymer contains fluorine or contains silica.
In the foregoing package structure and the method for fabricating the same, the passivation layer includes a first insulating layer having a first dielectric constant and a second insulating layer having a second dielectric constant, and the first dielectric constant is different from the second dielectric constant. For example, the first dielectric constant is at least 9 and the second dielectric constant is less than 9; or, the position of the first insulating layer corresponds to a sensing pixel of the electronic device, and the position of the second insulating layer corresponds to a separation position between any two adjacent sensing pixels of the electronic device.
Therefore, the package structure and the manufacturing method thereof of the invention mainly combine the protective layer on the electronic element and then use the package layer to wrap the electronic element, so that in the subsequent singulation process, a cutter does not need to pass through the protective layer, and compared with the prior art, the package structure of the invention can avoid the problem of generating burrs at the edge.
In addition, the packaging structure of the invention can enhance the signal transmission capability by using the polymer with the dielectric constant of at least 9 as the protective layer.
Drawings
FIG. 1 is a cross-sectional view of a conventional package structure;
fig. 2A to fig. 2E are schematic cross-sectional views illustrating a manufacturing method of a package structure according to a first embodiment of the invention; and
fig. 3A to 3C are schematic cross-sectional views illustrating a manufacturing method of a package structure according to a second embodiment of the invention; fig. 3B 'is a partially enlarged view corresponding to fig. 3B, and fig. 3B ″ is a schematic view corresponding to fig. 3B' of another embodiment.
Description of the symbols:
1,2,3 packaging structure
10 base plate
11 sensing chip
11a,21a sensing surface
12 protective film
13 packaging colloid
2a,3a wafer
20 load bearing member
21 electronic component
21b non-sensing surface
210 conductive bump
22,32 protective layer
23 encapsulation layer
23a first surface
23b second surface
32a first insulating layer
32b second insulating layer
320 recess
A sensing pixel
Position of separation B
S cutting path
R burr.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for understanding and reading the contents disclosed in the specification, and are not used for limiting the conditions under which the present invention can be implemented, so that the present invention has no technical significance, and any structural modifications, ratio relationship changes or size adjustments should still fall within the scope of the technical contents disclosed in the present invention without affecting the efficacy and the achievable purpose of the present invention. In the present specification, the terms "upper", "first", "second" and "first" are used for clarity of description only, and are not used to limit the scope of the present invention, and changes or modifications of the relative relationship thereof are also regarded as the scope of the present invention without substantial changes in the technical contents.
Please refer to fig. 2A to fig. 2E, which are schematic cross-sectional views illustrating a manufacturing method of a package structure 2 according to a first embodiment of the invention.
As shown in fig. 2A and fig. 2B, a wafer 2A having a passivation layer 22 thereon is subjected to a singulation process to obtain a plurality of electronic devices 21 having the passivation layer 22.
In the present embodiment, the wafer 2a includes a plurality of electronic devices 21, and the passivation layer 22 is bonded to the entire surface of the wafer 2a before singulation.
The electronic component 21 is a sensing chip, such as a sensing chip for detecting changes in biological charges, temperature differences, pressure, etc., and more preferably a fingerprint recognition chip, which can perform biological recognition through the capacitance differences received by the sensing surface 21 a. In addition, the electronic component 21 has a sensing surface 21a and a non-sensing surface 21b opposite to each other, wherein the protective layer 22 is bonded to the sensing surface 21 a.
The material forming the protection layer 22 is a polymer (polymer) having a dielectric constant of at least 9 (i.e., 9 or more), such as Polyimide (PI) or Polybenzoxazole (PBO) containing fluorine or silicon oxide.
As shown in fig. 2C, the electronic component 21 is combined with the non-sensing surface 21b and electrically connected to a carrier 20.
In the present embodiment, the supporting component 20 is a circuit structure with a core layer or a coreless layer (core), such as a package substrate (substrate), which has a circuit layer, such as a fan-out (fan out) redistribution layer (RDL). It should be understood that the carrier 20 may be other types of chip carriers, such as a lead frame (leadframe), a semiconductor board such as a wafer (wafer), or other carrier boards with metal wires (routing), but is not limited thereto.
In addition, the electronic component 21 is electrically connected to the carrier 20 in a flip-chip manner through the plurality of conductive bumps 210; alternatively, in other embodiments, the electronic device 21 can be electrically connected to the carrier 20 by wire bonding (not shown). Therefore, the manner of electrically connecting the electronic component 21 to the carrier 20 is not particularly limited.
As shown in fig. 2D, an encapsulation layer 23 is formed on the carrier 20 to cover the electronic component 21 and a portion of the surface (side surface) of the protection layer 22, so that the electronic component 21 is embedded in the encapsulation layer 23, and a portion of the surface (upper surface) of the protection layer 22 is exposed from the encapsulation layer 23.
In the present embodiment, the encapsulation layer 23 has a first surface 23a and a second surface 23b opposite to each other, the encapsulation layer 23 is bonded to the carrier 20 by the second surface 23b thereof, and the upper surface of the protection layer 22 is exposed from the first surface 23a of the encapsulation layer 23.
The material forming the sealing layer 23 is Polyimide (PI), dry film (dry film), epoxy resin (epoxy), or sealing compound, but is not limited thereto.
The method of forming the encapsulating layer 23 is performed by a press molding (laminating) method or a mold molding (molding) method such as a compression molding (compression molding) method or a transfer molding (transfer molding) method.
As shown in fig. 2E, a singulation process is performed along the cutting path S shown in fig. 2D.
Accordingly, in the manufacturing method of the package structure of the present invention, the passivation layer 22 is first bonded to the electronic component 21, and then the package layer 23 is used to cover the electronic component 21, so that in the subsequent singulation process, the cutting path S only needs to pass through the package layer 23 without contacting the passivation layer 22, and thus no burr is generated on the edge of the package structure 2.
In addition, since the signal transmission capability of the high-k polymer is better than that of the low-k polymer, the package structure 2 of the present invention can enhance the signal transmission capability by using the polymer with a dielectric constant of at least 9 as the protection layer 22.
Please refer to fig. 3A to fig. 3C, which are schematic cross-sectional views illustrating a manufacturing method of a package structure 3 according to a second embodiment of the invention. The difference between this embodiment and the first embodiment is in the structure of the protection layer, and other structures are substantially the same, so that only the differences will be described in detail below, and the description of the differences will be omitted.
As shown in fig. 3A, a wafer 3A having a first insulating layer 32a thereon and a plurality of electronic devices defined thereon is provided, wherein a plurality of recesses 320 are formed in the first insulating layer 32 a.
In the present embodiment, the first insulating layer 32a is formed of a polymer (polymer) having a first dielectric constant of at least 9.
As shown in fig. 3B, a second insulating layer 32B is formed in the recesses 320, so that the first and second insulating layers 32a,32B form a passivation layer 32.
In the present embodiment, the second insulating layer 32b is formed of a polymer having a second dielectric constant less than 9 (e.g., 4 or less than 4), and the first dielectric constant is different from the second dielectric constant, so that the passivation layer 32 includes polymers having different dielectric constants, i.e., the passivation layer 32 can have both a polymer having a high dielectric constant and a polymer having a low dielectric constant.
In addition, as shown in fig. 3B', the position of the high-k polymer (the first insulating layer 32a) corresponds to the sensing pixel a of the electronic device 21, and the position of the low-k polymer (the second insulating layer 32B) corresponds to the separation position B between any two adjacent sensing pixels a of the electronic device 21, so that the two insulating layers 32a and 32B are alternately (alternately) arranged. It should be understood that, in another embodiment, as shown in fig. 3B ″, a polymer with a low dielectric constant (i.e., the second insulating layer 32B) may be formed on the wafer 3a first, and the sensing pixel a is exposed outside the recess 320, and then a polymer with a high dielectric constant (i.e., the first insulating layer 32a) is formed in the recesses 320 and covers the sensing pixel a.
Also, the concave portion 320 can also extend into the electronic device 21 to enhance the function of the passivation layer 32 and the combination with the electronic device 21.
As shown in fig. 3C, the wafer 3a having the passivation layer 32 is subjected to a singulation process to obtain a plurality of electronic devices 21 having the passivation layer 32. Then, the electronic component 21 is combined and electrically connected to a carrier 20. Then, an encapsulation layer 23 is formed on the carrier 20 to cover the electronic element 21, and a portion of the surface (upper surface) of the protection layer 32 is exposed out of the encapsulation layer 23.
Therefore, the package structure 3 of the present embodiment can improve the signal strength from the finger by the high-k polymer (the first insulating layer 32a) to improve the sensing accuracy, and can avoid the interference of the sensing signal between the adjacent sensing pixels a by the low-k polymer (the second insulating layer 32 b).
In addition, when the package structure 2,3 of the present invention is applied to a fingerprint sensor, a user touches his finger on the protection layers 22,32 to scan the received capacitance difference of the sensing surface 21a by using the charge variation, temperature difference, pressure, etc. for the electronic device 21 such as a sensing chip to identify.
The invention also provides a package structure 2,3, comprising a carrier 20, an electronic component 21 having a protective layer 22,32 thereon, and a packaging layer 23.
The electronic component 21 has a sensing surface 21a and a non-sensing surface 21b opposite to each other, the sensing surface 21a is combined with the protection layers 22 and 32, and the electronic component 21 is combined with the non-sensing surface 21b and electrically connected to the carrier 20.
The encapsulating layer 23 is formed on the carrier 20 to cover the electronic component 21 and a part of the surface (side surface) of the protection layer 22, and the part of the surface (upper surface) of the protection layer 22 is exposed out of the encapsulating layer 23.
In one embodiment, the material forming the passivation layer 22 is a polymer having a dielectric constant of at least 9. For example, the polymer contains fluorine or contains silica.
In one embodiment, the passivation layer 32 includes a first insulating layer 32a having a first dielectric constant of at least 9 and a second insulating layer 32b having a second dielectric constant lower than 9. For example, the position of the first insulating layer 32a with a dielectric constant of at least 9 corresponds to the sensing pixel a of the electronic element 21, and the position of the second insulating layer 32B with a dielectric constant lower than 9 corresponds to the separation position B between any two adjacent sensing pixels a of the electronic element 21.
In summary, in the package structure and the method for fabricating the same of the present invention, the passivation layer is first bonded to the electronic device, and then the package layer is used to cover the electronic device, so that no burr is generated on the edge of the package structure after singulation process.
In addition, the protective layer contains polymer with dielectric constant at least 9 to enhance signal transmission capability.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Therefore, the scope of the invention should be determined from the following claims.
Claims (7)
1. A package structure, characterized in that it comprises:
a carrier;
the electronic element is provided with a sensing surface and a non-sensing surface which are opposite, and is combined with the non-sensing surface and electrically connected with the bearing piece;
a protective layer formed on the sensing surface of the electronic element, wherein the protective layer comprises a first insulating layer with a first dielectric constant and a second insulating layer with a second dielectric constant, the first dielectric constant is at least 9, and the second dielectric constant is lower than 9; and
a packaging layer formed on the carrier to cover the electronic element and the side surface of the protective layer, and the packaging layer is exposed from the upper surface of the protective layer,
the position of the first insulating layer corresponds to the sensing pixels of the electronic element, and the position of the second insulating layer corresponds to the separation position between any two adjacent sensing pixels of the electronic element, so that the first insulating layer and the second insulating layer are alternately arranged.
2. The package structure of claim 1, wherein the polymer comprises fluorine or silicon oxide.
3. A method for fabricating a package structure, the method comprising:
providing at least one electronic element with a sensing surface and a non-sensing surface which are opposite, and combining a protective layer on the sensing surface, wherein the protective layer comprises a first insulating layer with a first dielectric constant and a second insulating layer with a second dielectric constant, the first dielectric constant is at least 9, and the second dielectric constant is lower than 9;
combining the electronic element with the non-sensing surface and electrically connecting the electronic element with a bearing piece; and
forming a packaging layer on the carrier to cover the electronic element and the side surface of the protective layer, and exposing the packaging layer outside the upper surface of the protective layer,
the position of the first insulating layer corresponds to the sensing pixels of the electronic element, and the position of the second insulating layer corresponds to the separation position between any two adjacent sensing pixels of the electronic element, so that the first insulating layer and the second insulating layer are alternately arranged.
4. The method of claim 3, wherein the polymer comprises fluorine or silicon oxide.
5. The method of claim 3, wherein the electronic component manufacturing process comprises:
providing a wafer containing a plurality of electronic elements, wherein the protective layer is combined on the whole surface of the wafer; and
and performing a singulation process to obtain a plurality of electronic elements with the protective layer.
6. The method of claim 3, wherein the passivation layer is formed by a process comprising:
forming a first insulating layer on the electronic element, wherein a plurality of concave parts are formed in the first insulating layer; and
forming the second insulating layer in the recess.
7. The method of claim 3, further comprising performing a singulation process after the forming of the encapsulation layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106107756 | 2017-03-09 | ||
| TW106107756A TWI637468B (en) | 2017-03-09 | 2017-03-09 | Package structure and the manufacture thereof |
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| CN108573200A CN108573200A (en) | 2018-09-25 |
| CN108573200B true CN108573200B (en) | 2022-03-18 |
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| TWI718801B (en) * | 2019-12-06 | 2021-02-11 | 矽品精密工業股份有限公司 | Electronic package manufacturing method |
| CN115109464B (en) * | 2022-07-06 | 2023-07-14 | 杭州福斯特应用材料股份有限公司 | Ink composition, package structure and semiconductor device |
| US11740752B1 (en) * | 2022-07-13 | 2023-08-29 | Sigmasense, Llc. | Device with signal generator |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201439865A (en) * | 2013-04-12 | 2014-10-16 | Bruce Zheng-San Chou | Fingerprint sensor device and method of manufacturing the same |
| CN104991683A (en) * | 2015-07-22 | 2015-10-21 | 京东方科技集团股份有限公司 | OLED (organic light emitting dioxide) touch display panel and control method therefor and display device |
| CN106484202A (en) * | 2016-09-30 | 2017-03-08 | 昆山国显光电有限公司 | Capacitance touch screen and preparation method thereof and touch display unit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7843011B2 (en) * | 2007-01-31 | 2010-11-30 | Freescale Semiconductor, Inc. | Electronic device including insulating layers having different strains |
| US20140127857A1 (en) * | 2012-11-07 | 2014-05-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Carrier Wafers, Methods of Manufacture Thereof, and Packaging Methods |
| TWI566339B (en) * | 2014-11-11 | 2017-01-11 | 矽品精密工業股份有限公司 | Electronic package and method of manufacture |
| TWM520196U (en) * | 2016-01-27 | 2016-04-11 | 精材科技股份有限公司 | A chip scale sensing chip package |
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2017
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201439865A (en) * | 2013-04-12 | 2014-10-16 | Bruce Zheng-San Chou | Fingerprint sensor device and method of manufacturing the same |
| CN104991683A (en) * | 2015-07-22 | 2015-10-21 | 京东方科技集团股份有限公司 | OLED (organic light emitting dioxide) touch display panel and control method therefor and display device |
| CN106484202A (en) * | 2016-09-30 | 2017-03-08 | 昆山国显光电有限公司 | Capacitance touch screen and preparation method thereof and touch display unit |
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| TWI637468B (en) | 2018-10-01 |
| CN108573200A (en) | 2018-09-25 |
| TW201834161A (en) | 2018-09-16 |
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