CN108568456A - A kind of refractory metal silk preparation method - Google Patents
A kind of refractory metal silk preparation method Download PDFInfo
- Publication number
- CN108568456A CN108568456A CN201810218382.3A CN201810218382A CN108568456A CN 108568456 A CN108568456 A CN 108568456A CN 201810218382 A CN201810218382 A CN 201810218382A CN 108568456 A CN108568456 A CN 108568456A
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- Prior art keywords
- silk material
- temperature
- silk
- current
- wire drawing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000003870 refractory metal Substances 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 100
- 238000000034 method Methods 0.000 claims abstract description 50
- 238000005491 wire drawing Methods 0.000 claims abstract description 42
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 230000007246 mechanism Effects 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 4
- 230000003321 amplification Effects 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 229910000521 B alloy Inorganic materials 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000001953 recrystallisation Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- CZBGCSZGIMINPA-UHFFFAOYSA-N [Rh].[W] Chemical compound [Rh].[W] CZBGCSZGIMINPA-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
- B21C1/00—Manufacture of metal sheets, metal wire, metal rods, metal tubes by drawing
- B21C1/02—Drawing metal wire or like flexible metallic material by drawing machines or apparatus in which the drawing action is effected by drums
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/24—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Mechanical Engineering (AREA)
- Metal Extraction Processes (AREA)
Abstract
The present invention discloses a kind of refractory metal and B alloy wire preparation method, belongs to material processing field.Detailed process is：AC DC electric is passed through on by drawing material, hot processing temperature is reached by drawing material self-heating under the function of current, make drawing process that can be carried out under big cross-sectional area deformation ratio, two potential test ends are set in silk material bringing-up section simultaneously, are measured by drawing material specified section potential value, this section of silk material temperature is accurately measured according to surveyed silk material resistance-temperature characteristic, by adjusting current control is passed through by drawing material heating power.To ensure that wire drawing is carried out in the case where the material appraises and decides technological temperature.This method has the characteristics that production efficiency is high, product grains are tiny, production process is lost without raw material.
Description
Technical field
The present invention relates to a kind of refractory metal silk preparation methods, belong to material processing field.
Background technology
Drawing process belongs to metal-pressed machine scope.Its principle makes transversal after so that metal is passed through mold under external force
Area is compressed, and to obtain required cross-sectional area and shape, traditional wiredrawing process generally uses one group（5 ~ 8）By big
Workpiece is drawn wire at room temperature to small wire-drawing die, it is general to use because hardness is higher at room temperature for it for refractory metal
The modes such as silk material direct-electrifying or crucible stove heat make to reach hot processing temperature by drawing material, due to " using silk material direct-electrifying
Or crucible stove heat " mode, cause during the drawing process, metal wire material is different by the temperature of mold, is acted in constant force
Under, the metal wire material for being close to or higher than recrystallization temperature is in soft state, and drawing resistance is small；And less than the wire of recrystallization temperature
Material is in hard state, and drawing resistance is big, this is easy for causing the uneven of wire travelling speed in process.Make each rank of silk material
The performance difference of section is larger, and accurate to dimension error is big, while may also cause the adverse consequences such as silk material fracture.
For refractory metal and its alloy since recrystallization temperature is higher, moulding crisp transition temperature height causes to be plastically deformed
It is both needed to carry out at high temperature, in room temperature condition（Or under recrystallization temperature）Refractory metal and its alloy aximal deformation value plastic deformation
After easily cause brittle fracture（Such as：For monocrystalline iridium within the temperature range of 0 ~ 1000 DEG C, fracture mode is transcrystalline brittle cleavage and edge
The mixed mode of crystal boundary brittle fracture）, while it is high to strain rate susceptibility, one time deflection is small, and plastic processing is difficult, adds
Work efficiency rate is low.
Invention content
A method of refractory metal silk is prepared, solves high-melting-point silk material therm-param method in drawing process
Problem accurately controls hot processing temperature, avoids overheat and underheat problem, reduces silk material processing loss, has production
The features such as efficient, properties of product are stablized, specifically includes following steps：Make silk material uniform motion in drawing process, in silk material
On be passed through electric current, the silk material self-heating under the function of current measures in silk material bringing-up section potential value between any distance, in conjunction with silk material
Resistance-temperature characteristic obtain measured section temperature value, the size of current of input silk material is adjusted according to measured temperature value, to
Silk material heating power is controlled, ensures that silk material temperature carries out at a temperature of the drawing process of setting when silk material reaches wire drawing die, finally
Obtain wire.
Further, the method for the invention specifically includes following steps：Silk material 2 is sequentially passed through into tension mechanism 3, wire drawing
It is batched by pulling wheel 9 after mould 8, silk material 2 is wrapped on pulling wheel 9, and rotation pulling wheel 9 makes silk material 2 by wire drawing die 8 to realize
Wire drawing finally obtains wire；
In drawing process：So that silk material 2 is contacted conducting with brush 4, wire drawing die 8,14 one end of power supply is connect with brush 4, the other end with
Wire drawing die 8 is installed, wire drawing die 8 contacts conducting with holder 1, and holder 1 is connected to machine jointly with power supply 14 in the connection of holder 1, holder 1
Bridge joint ground terminal 15, power supply 14, brush 4, silk material 2, wire drawing die 8, holder 1, rack earth end 15 form current loop, make in electric current
With 2 self-heating of lower silk material；It is equipped with the front contact 5 contacted with silk material 2 and back contact 7 in the bringing-up section of silk material 2, passes through measurement
Measured section temperature value, foundation can be obtained in conjunction with the temperature-coefficient of electrical resistance of silk material 2 in potential value between front contact 5, back contact 7
Measured temperature value adjusts the electric current of input silk material 2, to control the temperature of silk material 2, ensure drawing process under reasonable temperature into
Row.
The present invention is by the size of current of potential value between front contact 5, back contact 7 control input silk material 2, during this
Control method be not limited, can be Analog control or computer control.
The Analog control detailed process is：Front contact 5, back contact 7 are connect with 10 positive and negative anodes of voltage amplifier, through electricity
The voltage signal access voltage-to-current controller 16 that amplifier 10 amplifies is pressed, voltage-to-current controller 16 controls power supply 14 and exports
Electric current is to realize that the control of processing temperature has been realized in the adjusting of 2 heating power of silk material；
The computer controls detailed process：Front contact 5, back contact 7 are connect with 10 positive and negative anodes of voltage amplifier, are put through voltage
The voltage signal access A/D converter 11 that big device 10 amplifies is converted to digital signal and is sent into control computer 12, control computer
12 determine corresponding heated current according to heated current and front contact 5,7 voltage of back contact and export control signal cause D/A conversions
Device 13,13 output signal power supply of D/A converter, 14 output current size, its temperature, which reaches, when guarantee silk material reaches wire drawing die 8 sets
Constant temperature degree.
Tension mechanism 3 of the present invention, wire drawing die 8, pulling wheel 9 be successively in mounting bracket 1, and brush 4, rear touches front contact 5
Point 7 is sequentially arranged on insulating support 6, and insulating support 6 is fixed on holder 1, and insulating support 6 is located at tension mechanism 3, wire drawing die
Between 8.
Power supply 14 of the present invention is AC power or DC power supply, and feature is that electric current stablizes simultaneously regulated power supply, according to
According to the difference of power supply, measured voltage is respectively AC signal or direct current signal between front contact 5 and back contact 7.
According to the difference of 2 high temperature oxidation resistent susceptibility of silk material, for oxidizable material at high temperature, by silk material 2 and brush 4,
Front contact 5, back contact 7 are placed in closed environment, and closed environment is vacuumized or is full of inert gas, to realize vacuum or gas
Drawing process process under atmosphere protection.
Distance can adjust according to 2 resistance value of silk material between front contact 5 and back contact 7 of the present invention, by adjusting preceding
Distance makes output voltage values in pressure measuring instrument optimum range to ensure measuring accuracy between contact 5 and back contact 7.
In refractory metal silk preparation process of the present invention can individual equipment use, also can combine and make after more series connection
With.
Beneficial effects of the present invention：
（1）The method of the invention makes silk material movement velocity be uniform motion, silk material distance-in bringing-up section in drawing process
Temperature curve is linear relationship, and wire drawing die is reached to control the i.e. controllable silk material of temperature between measuring section front contact and back contact
Temperature makes silk material carry out wire drawing in rational hot processing temperature to realize accurately controlling for processing temperature.
（2）Various refractory metal wire drawers under 1/100 millimeter can be achieved in the precise control of the method for the invention temperature
Skill greatly improves the efficient attenuation of refractory metal and alloy wire.It is accurately controlled, is protected by the temperature of constant section of silk material
The metal wire material temperature of card into mold is consistent, stablizes processing technology, reduces control difficulty, improves Product Precision and yield rate.
Description of the drawings
Fig. 1 is a kind of this described refractory metal silk preparation method device main structure schematic diagram；
Fig. 2 is a kind of this described one principle schematic of refractory metal silk preparation method device embodiment；
Fig. 3 is a kind of this described two principle schematic of refractory metal silk preparation method device embodiment.
In figure：1- holders, 2- silk materials, 3- tension mechanisms, 4- brushes, 5- front contacts, 6- insulating supports, 7- back contacts, 8-
Wire drawing die, 9- pulling wheels, 10- voltage amplifiers, 11-A/D converters, 12- control computers, 13-D/A converters, 14- electricity
Source, 15- rack earths end, 16- voltage-to-current controllers.
Specific implementation mode
Embodiment 1
The present embodiment uses iridium wire, and iridium wire diameter 0.5mm, wire drawing section shrinkage is than 19%, diameter 0.45mm after drawing：Silk material is transported
0.2 meter per second of dynamic speed, as heated current ItFor 2.7A when, Vt=8.2mV, silk material reaches 1100 DEG C of wire drawing die temperature.
Silk material 2 is sequentially passed through and is batched by pulling wheel 9 after tension mechanism 3, wire drawing die 8, silk material 2 is wrapped on pulling wheel 9,
Rotation pulling wheel 9 makes silk material 2 by wire drawing die 8 to realize that wire drawing finally obtains wire；
In drawing process：Silk material 2 is set to be contacted with brush 4, wire drawing die 8,14 one end of power supply is connect with brush 4, the other end and holder 1
Connection is equipped with wire drawing die 8 on holder 1, and wire drawing die 8 contacts conducting with holder 1, power supply 14, brush 4, silk material 2, wire drawing die 8,
Holder 1, rack earth end 15 form current loop, 2 self-heating of silk material under the function of current；It is set in the bringing-up section of silk material 2
There are the front contact 5 contacted with silk material 2 and back contact 7, by measuring the potential value between front contact 5, back contact 7, in conjunction with silk material 2
Temperature-coefficient of electrical resistance can be obtained measured section temperature value, the electric current of input silk material 2 is adjusted according to measured temperature value, to control
The temperature of silk material 2 ensures that drawing process carries out under reasonable temperature.
Control method controls for computer in the present embodiment, and detailed process is：The front contact 5, back contact 7 are put with voltage
The 10 positive and negative anodes connection of big device, the voltage signal access A/D converter 11 amplified through voltage amplifier 10 are converted to digital signal and send
Enter control computer 12, control computer 12 determines corresponding heating electricity according to heated current and front contact 5,7 voltage of back contact
Flowing and exporting control signal causes D/A converter 13, D/A converter 13 to control 14 electric current of power supply.
Tension mechanism 3, wire drawing die 8, pulling wheel 9 described in the present embodiment be successively in mounting bracket 1, brush 4, front contact 5, after
Contact 7 is sequentially arranged on insulating support 6, and insulating support 6 is fixed on holder 1, and insulating support 6 is located at tension mechanism 3, wire drawing
Between mould 8.
Power supply 14 described in the present embodiment is DC power supply, and feature is that electric current is stablized and regulated power supply, front contact 5 are touched with rear
Measured voltage is direct current signal between point 7.
Iridium wire prepared by the present embodiment the method is tiny with crystal grain compared with traditional wiredrawing process method, any surface finish
The features such as degree is high, and production efficiency is high.
Embodiment 2
The present embodiment the method is same as Example 1, and difference is silk material 2 and brush 4, front contact 5, back contact 7 being placed in
In closed environment, closed environment is vacuumized or is full of inert gas, to realize the drawing process under vacuum or atmosphere protection
Process.
Power supply 14 described in the present embodiment is AC power, and feature is that electric current stablizes simultaneously regulated power supply, in front contact 5 with after
Measured voltage is AC signal between contact 7.
Control method is Analog control in the present embodiment, and detailed process is：It is equipped in the bringing-up section of silk material 2 and silk material
The front contact 5 and back contact 7 of 2 contacts, by measuring the potential value between front contact 5, back contact 7, front contact 5, back contact 7 are defeated
Outlet access voltage amplifier 10 will measure voltage amplification, and the control source voltage-to-current amplified through voltage amplifier 10 controls
Device 16, the output control voltage-controlled source 14 of voltage-to-current controller 16, power supply 14 can be realized by adjusting output current I
Control to 2 heating temperature of silk material.
It is 32% that the present embodiment, which uses 2% B alloy wire of rhodium-tungsten, iridium wire diameter 0.4mm, wire drawing section shrinkage ratio, straight after drawing
Diameter 0.32mm.0.15 meter per second of silk material movement velocity, when heated current It is 1.8A, Vt=6.3mV, silk material reaches wire drawing die temperature
The features such as 1200 DEG C of degree, the technique have section shrinkage than big, and production efficiency is high, and product grains are tiny, and surface smoothness is high.
Claims (6)
1. a kind of method preparing refractory metal silk, it is characterised in that：Make silk material uniform motion in drawing process, in silk material
On be passed through electric current, the silk material self-heating under the function of current measures in silk material bringing-up section potential value between any distance, and zygomite
The resistance-temperature characteristic of material obtains measuring section average temperature value, and the size of current of input silk material is adjusted according to measured temperature value, from
And silk material heating power is controlled, ensure that silk material temperature carries out at a temperature of the drawing process of setting when silk material reaches wire drawing die, most
Wire is obtained eventually.
2. the method for preparing refractory metal silk according to claim 1, which is characterized in that specifically include following steps：It will
Silk material（2）Sequentially pass through tension mechanism（3）, wire drawing die（8）Afterwards by pulling wheel（9）It batches, silk material（2）It is wrapped in pulling wheel（9）
On, rotate pulling wheel（9）Make silk material（2）Pass through wire drawing die（8）To realize that wire drawing finally obtains wire；
In drawing process：Make silk material（2）With brush（4）, wire drawing die（8）Contact conducting, power supply（14）One end and brush（4）Even
It connects, the other end and holder（1）Connection, holder（1）On wire drawing die is installed（8）, wire drawing die（8）With holder（1）Contact conducting, branch
Frame（1）With power supply（14）It is connected to rack earth end jointly（15）, power supply（14）, brush（4）, silk material（2）, wire drawing die（8）, holder
（1）, rack earth end（15）Form current loop, the silk material under the function of current（2）Self-heating；In silk material（2）Bringing-up section
It is inside equipped with and silk material（2）The front contact of contact（5）And back contact（7）, by measuring front contact（5）, back contact（7）Between electricity
Place value, in conjunction with silk material（2）Resistance-temperature characteristic can be obtained measured section temperature value, adjust input silk material according to measured temperature value
（2）Electric current, to control silk material（2）Heating power, make silk material（2）Reach wire drawing die（8）Shi Sicai（2）Temperature is being set
Drawing process at a temperature of carry out.
3. the method for preparing refractory metal silk according to claim 2, it is characterised in that：By measuring front contact（5）, after
Contact（7）Between potential value control input silk material（2）Size of current, control method during this be Analog control or
Computer controls；
Analog control detailed process is：Front contact（5）, back contact（7）With voltage amplifier（10）Positive and negative anodes connect, through voltage
Amplifier（10）The voltage signal of amplification accesses voltage-to-current controller（16）, voltage-to-current controller（16）Control power supply
（14）Output current is to realize silk material（2）The control of processing temperature has been realized in the adjusting of heating power；
Computer controls detailed process：Front contact（5）, back contact（7）With voltage amplifier（10）Positive and negative anodes connect, through voltage
Amplifier（10）The voltage signal of amplification accesses A/D converter（11）It is converted to digital signal and is sent into control computer（12）, control
Computer processed（12）According to heated current and front contact（5）, back contact（7）Voltage determines corresponding heated current and exports control
Signal causes D/A converter（13）, D/A converter（13）Output signal power supply（14）Output current size ensures that silk material reaches and draws
Silk mould（8）When its temperature reach set temperature.
4. the method for preparing refractory metal silk according to claim 2, it is characterised in that：The tension mechanism（3）, wire drawing
Mould（8）, pulling wheel（9）Mounting bracket successively（1）On, brush（4）, front contact（5）, back contact（7）It is sequentially arranged at insulation branch
Frame（6）On, insulating support（6）It is fixed on holder（1）On, insulating support（6）Positioned at tension mechanism（3）, wire drawing die（8）Between.
5. the method for preparing refractory metal silk according to claim 2, it is characterised in that：The power supply（14）For alternating current
Source or DC power supply, according to the difference of power supply, in front contact（5）With back contact（7）Between measured voltage be respectively hand over
Flow signal or direct current signal.
6. the method for preparing refractory metal silk according to claim 2, it is characterised in that：According to silk material（2）High temperature oxytolerant
The difference for changing performance, for oxidizable material at high temperature, by silk material（2）With brush（4）, front contact（5）, back contact（7）It sets
In in closed environment, closed environment is vacuumized or is full of inert gas, to realize the wire drawer under vacuum or atmosphere protection
Skill process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810218382.3A CN108568456B (en) | 2018-03-16 | 2018-03-16 | Preparation method of high-melting-point metal wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810218382.3A CN108568456B (en) | 2018-03-16 | 2018-03-16 | Preparation method of high-melting-point metal wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108568456A true CN108568456A (en) | 2018-09-25 |
| CN108568456B CN108568456B (en) | 2020-05-15 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810218382.3A Active CN108568456B (en) | 2018-03-16 | 2018-03-16 | Preparation method of high-melting-point metal wire |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117600263A (en) * | 2023-11-21 | 2024-02-27 | 山东韦德金属科技有限公司 | Tungsten molybdenum wire processing heating electric stove |
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| CN108568456B (en) | 2020-05-15 |
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