CN108551078A - A kind of semiconductor laser beam merging apparatus - Google Patents
A kind of semiconductor laser beam merging apparatus Download PDFInfo
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- CN108551078A CN108551078A CN201810385607.4A CN201810385607A CN108551078A CN 108551078 A CN108551078 A CN 108551078A CN 201810385607 A CN201810385607 A CN 201810385607A CN 108551078 A CN108551078 A CN 108551078A
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- merging apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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- Semiconductor Lasers (AREA)
Abstract
The invention discloses a kind of semiconductor laser beam merging apparatus, the semiconductor laser beam merging apparatus makes the light at edge not be fed back to by zlasing mode selection device, the main zlasing mode of only part low order is fed back, and model selection is carried out by filter again, the edge-light of slow axis beam both sides is set all to be filtered, only the zlasing mode of part low order is allowed to pass through, is incident to resonance, PGC demodulation and the output for realizing laser entirety on output coupling mirror.The beam merging apparatus realizes the beam quality for surmounting single tube diffraction limit.
Description
Technical field
The present invention relates to the conjunction beam technical fields of semiconductor laser, more specifically more particularly to a kind of semiconductor laser
Device beam merging apparatus.
Background technology
With the continuous development of science and technology, semiconductor laser is widely used to daily life and work
In, it brings great convenience for people’s lives.
Semiconductor laser efficiency, volume, the service life and it is integrated etc. have the advantages that it is notable, in industry and
There is prodigious application prospect in the fields such as military affairs, but often power is low, the angle of divergence is big and beam quality for semiconductor laser
The problems such as poor, cannot meet the needs of fields such as civilian, industrial and military.
Existing semiconductor laser closes there are many kinds of Shu Fangfa, for example, beam is closed in space, beam, spectrum beam combination, phase are closed in waveguide
It is dry to close beam and polarization coupling etc..Wherein, coherently combined and spectrum beam combination have apparent advantage in terms of improving beam quality, but
It is the diffraction limit for also failing to surmount single tube.
So, how a kind of semiconductor laser beam merging apparatus for improving beam quality is provided, is art technology
Personnel's urgent problem to be solved.
Invention content
To solve the above problems, the present invention provides a kind of semiconductor laser beam merging apparatus, which realizes
Surmount the beam quality of single tube diffraction limit, and realizes the method that selective feedback external cavity closes beam off axis.
To achieve the above object, the present invention provides the following technical solutions：
A kind of semiconductor laser beam merging apparatus, the beam merging apparatus include：Semiconductor laser group, fast axis collimation mirror
Group, slow axis collimation microscope group, fast axle slow axis conversion equipment, Fourier transform lens, grating, expand device, zlasing mode selection dress
It sets, filter and output coupling mirror；
The semiconductor laser group emits the identical light beam group of outgoing direction, and it is accurate that the light beam group passes sequentially through the fast axle
Straight microscope group, slow axis collimation microscope group, the fast axle slow axis conversion equipment, the Fourier transform lens, the grating and institute
It is projected after stating expand device；
Wherein, the fast axis collimation microscope group is used to reduce the fast axis direction angle of divergence of the light beam group, the slow axis collimation
Microscope group is used to reduce the slow-axis direction angle of divergence of the light beam group；The fast axle slow axis switch is for exchanging the light beam group
Fast axis direction and slow-axis direction；The Fourier transform lens is used to the light beam group carrying out Fourier transform and focusing；
The grating is used to carry out diffraction to the light after focusing；The expand device is for carrying out the light after diffraction to expand processing；Institute
Stating zlasing mode selection device, light beam carries out first time zlasing mode selection for that will expand that treated, with selected section low order
Optical mode along road reflect；The filter is used to the zlasing mode selection device treated light beam carrying out second to swash
Optical mode selects, and is exported so that the light beam of part low step mode is incident to the output coupling mirror by the filter.
Preferably, in above-mentioned beam merging apparatus, the semiconductor laser group includes at least two semiconductor lasers；Institute
It includes at least two fast axis collimation mirrors to state fast axis collimation microscope group, and each fast axis collimation mirror and each semiconductor laser phase
It is correspondingly arranged；The slow axis collimation microscope group includes at least two slow axis collimating mirrors, and each slow axis collimating mirror and each fast axle are accurate
The corresponding setting of straight mirror.
Preferably, in above-mentioned beam merging apparatus, the semiconductor laser group is single-tube semiconductor laser combination or line
Array semiconductor laser combines or repeatedly array semiconductor laser combines.
Preferably, in above-mentioned beam merging apparatus, the expand device is expand device of looking in the distance.
Preferably, in above-mentioned beam merging apparatus, the zlasing mode selection device is that zlasing mode selects speculum.
Preferably, in above-mentioned beam merging apparatus, the filter is spatial filter.
Preferably, in above-mentioned beam merging apparatus, each fast axis collimation mirror in the fast axis collimation microscope group, which is both provided with, to be subtracted
Anti- film.
Preferably, in above-mentioned beam merging apparatus, each slow axis collimating mirror in the slow axis collimation microscope group, which is both provided with, to be subtracted
Anti- film.
Preferably, in above-mentioned beam merging apparatus, the grating is transmissive diffraction grating.
Preferably, in above-mentioned beam merging apparatus, the grating is reflection-type diffraction grating.
By foregoing description it is found that a kind of semiconductor laser beam merging apparatus provided by the invention, the beam merging apparatus packet
It includes：Semiconductor laser group, fast axis collimation microscope group, slow axis collimation microscope group, fast axle slow axis conversion equipment, Fourier transform lens,
Grating, expand device, zlasing mode selection device, filter and output coupling mirror；Wherein, the fast axis collimation microscope group is for subtracting
The fast axis direction angle of divergence of the small light beam group, the slow axis collimation microscope group are used to reduce the slow-axis direction diverging of the light beam group
Angle；The fast axle slow axis switch is used to exchange the fast axis direction and slow-axis direction of the light beam group；The Fourier transformation
Lens are used to the light beam group carrying out Fourier transform and focusing；The grating is used to carry out diffraction to the light after focusing；Institute
Expand device is stated for carrying out the light after diffraction to expand processing；Treated for that will expand for the zlasing mode selection device
Light beam carries out first time zlasing mode selection, is reflected along road with the optical mode of selected section low order；The filter is used for institute
Zlasing mode selection device is stated treated that light beam carries out second of zlasing mode selection, so that the light beam of part low step mode is logical
It crosses the filter and is incident to the output coupling mirror and exported.
The semiconductor laser beam merging apparatus makes the light at edge not be fed back to by zlasing mode selection device,
The only several main zlasing modes in part are fed back, and carry out model selection again by filter, make slow axis beam
The edge-light of both sides is all filtered, and several main zlasing modes is only allowed to pass through, and is incident to realization on output coupling mirror and is swashed
Resonance, PGC demodulation and the output of finishing body.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of semiconductor laser beam merging apparatus provided in an embodiment of the present invention；
Fig. 2 is the principle signal of dotted box portion in a kind of semiconductor laser beam merging apparatus provided in an embodiment of the present invention
Figure；
Fig. 3 is that the principle of dotted box portion in another semiconductor laser beam merging apparatus provided in an embodiment of the present invention is shown
It is intended to.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
With reference to figure 1, Fig. 1 is a kind of structural schematic diagram of semiconductor laser beam merging apparatus provided in an embodiment of the present invention.
The beam merging apparatus includes：Semiconductor laser group 1, fast axis collimation microscope group 2, slow axis collimation microscope group 3, fast axle slow axis
Conversion equipment 4, Fourier transform lens 5, grating 6, expand device 7, zlasing mode selection device 8, filter 9 and output coupling
Mirror 10.
The semiconductor laser group 1 emits the identical light beam group of outgoing direction, and the light beam group passes sequentially through the fast axle
Collimate microscope group 2, slow axis collimation microscope group 3, the fast axle slow axis conversion equipment 4, the Fourier transform lens 5, the light
It is projected after grid 6 and the expand device 7.
Wherein, the fast axis collimation microscope group 2 is used to reduce the fast axis direction angle of divergence of the light beam group, the slow axis collimation
Microscope group 3 is used to reduce the slow-axis direction angle of divergence of the light beam group；The fast axle slow axis switch 4 is for exchanging the light beam
The fast axis direction and slow-axis direction of group；The Fourier transform lens 5 is used to the light beam group carrying out Fourier transform and gather
It is burnt；The grating 6 is used to carry out diffraction to the light after focusing；The expand device 7 is for carrying out the light after diffraction to expand place
Reason；For that will expand that treated, light beam carries out first time zlasing mode selection to the zlasing mode selection device 8, with selector
The optical mode of low order is divided to be reflected along road；The filter 9 is used to carry out the zlasing mode selection device treated light beam
Second of zlasing mode selection, only allows the light beam of several low step modes to be incident to the output coupling by the filter 9
Mirror 10 is exported.
Further, the semiconductor laser group 1 includes at least two semiconductor lasers, as shown in Figure 1, described half
Conductor laser group includes 1,1 ..., n semiconductor lasers, wherein n is positive integer more than or equal to 2, described partly to lead
Body laser group 1 is for emitting the identical light beam group of outgoing direction.
Optionally, the front cavity surface of each semiconductor laser is both provided with the diffraction light of antireflective film or setting instead of antireflective film
Learn element, such as speculum etc..It should be noted that reflectivity and membrane system the swashing relative to semiconductor laser of the antireflective film
Depending on ejected wave length, in embodiments of the present invention and it is not construed as limiting.
Optionally, the semiconductor laser group 1 combines for single-tube semiconductor laser.
Optionally, the semiconductor laser group 1 combines for linear array semiconductor laser.
Optionally, the semiconductor laser group 1 is repeatedly array semiconductor laser combination.
Further, the fast axis collimation microscope group 2 includes at least two fast axis collimation mirrors, and each fast axis collimation mirror
Setting corresponding with each semiconductor laser, as shown in Figure 1, the fast axis collimation microscope group includes 1,2 ..., m fast axles standards
Straight mirror, also, corresponding fast axis collimation mirror, the fast axis collimation are set in the optical output front end of each semiconductor laser
The quantity of mirror and the quantity of the semiconductor laser match, wherein m is the positive integer more than or equal to 2.The fast axle is accurate
Straight microscope group 2 is used to reduce the fast axis direction angle of divergence for the light beam group that semiconductor laser group 1 is launched, and realizes that fast axis direction is closely flat
The effect of row light output.
Optionally, each fast axis collimation mirror is both provided with antireflective film, the reflection for reducing light beam.It should be noted that
Depending on the reflectivity and membrane system of the antireflective film are relative to the excitation wavelength of semiconductor laser, do not make in embodiments of the present invention
It limits.
Further, slow axis collimation microscope group 3 includes at least two slow axis collimating mirrors, and each slow axis collimating mirror with it is every
A corresponding setting of fast axis collimation mirror, as shown in Figure 1, the slow axis collimation microscope group include 1,2 ..., p slow axis collimating mirrors, and
And the quantity of the fast axis collimation mirror and the quantity of the semiconductor laser and the quantity of the slow axis collimating mirror match,
Wherein, p is the positive integer more than or equal to 2.The slow axis collimation microscope group 3 is for reducing what semiconductor laser group 1 was launched
The slow-axis direction angle of divergence of light beam group realizes the effect of the closely parallel light output of slow-axis direction.
Optionally, each slow axis collimating mirror is both provided with antireflective film, the reflection for reducing light beam.It should be noted that
Depending on the reflectivity and membrane system of the antireflective film are relative to the excitation wavelength of semiconductor laser, do not make in embodiments of the present invention
It limits.
Further, the fast axle slow axis switch 4 is chosen as BTS for converting fast axis direction and slow-axis direction
(Beam Transformation System) device realizes superposition of the hot spot on fast axis direction.
Further, the fourier transform lens 5 are used to the light beam group carrying out Fourier transform and focusing, need
Illustrate, the semiconductor laser beam merging apparatus can also by adjusting the position relationship of the semiconductor laser group,
The light beam group that the semiconductor laser group is sent out is set directly to focus.
Further, the grating 6 be transmissive diffraction grating or reflection-type diffraction grating, in embodiments of the present invention simultaneously
It is not construed as limiting.
Further, the expand device 7 is expand device of looking in the distance, for the light beam of slow-axis direction to be amplified,
Including but not limited to Kepler-type or Galilean type etc., can be depending on the case where semiconductor laser beam merging apparatus.
Further, the zlasing mode selection device 8 includes but is not limited to that zlasing mode selects speculum.
Specifically, the reflectivity and wavelength of zlasing mode selection speculum in embodiments of the present invention and are not construed as limiting, it can
Depending on the concrete condition of semiconductor laser beam merging apparatus.
Further, the filter 9 includes but is not limited to spatial filter, can be the space of single-edge slit
Filter, or the spatial filter of bilaterally variable slit, concrete form are also not construed as limiting in embodiments of the present invention, can
Depending on as the case may be.
Further, the reflectivity of the output coupling mirror 10 and wavelength in embodiments of the present invention and are not construed as limiting, can
Depending on the concrete condition of semiconductor laser beam merging apparatus.
Based on the above-mentioned semiconductor laser beam merging apparatus of the present invention, its concrete operating principle is illustrated below.
As shown in Figure 1, semiconductor laser group include 1,2 ..., n semiconductor lasers, optionally, each semiconductor
The equal coated with antireflection film of front cavity surface of laser passes through fast axis collimation microscope group and slow axis by the light beam group that semiconductor laser group is sent out
Microscope group is collimated, so that the closely parallel light output of light beam group realizes fast axis direction and slow-axis direction using fast axle slow axis conversion equipment
Conversion, then be incident on transmission-type grating under the action of Fourier transform lens, according to grating equation 2dsin θLittrow=
M λ, m are diffraction time, in general, diffraction time takes -1 grade, the wavelength of different lasers is locked in λ1、λ2、….、λn1,
Have the function of improving semiconductor laser pattern, θLittrowFor the blaze angle of transmission-type grating, n1 is positive integer, and d is grating
Period, transmission-type grating diffration light are incident in expand device, the expansion of slow-axis direction light beam are realized, as shown in Fig. 2, one
Light splitting is by zlasing mode selection device, so that its light beam is reflected along road, forming the main zlasing mode feedback in part, edge
Light be not fed back to, and selected by filter zlasing mode again, by the side of slow-axis direction light beam both sides
Edge light all filters out, and several main zlasing modes is only allowed to penetrate, and is incident to and realizes the humorous of laser entirety on output coupling mirror
It shakes, PGC demodulation and output.As shown in figure 3, by changing zlasing mode selection device in the position of slow-axis direction, realize main
The selection of pattern and feedback, wherein 1201 expression zlasing mode selection devices compare the position at edge, semiconductor laser in hot spot
Device beam merging apparatus does not realize locking, and 1301 indicate zlasing mode selection device in the position that a comparison optimizes, semiconductor
Laser beam merging apparatus realizes locking.
By foregoing description it is found that a kind of semiconductor laser beam merging apparatus provided by the invention, is selected by zlasing mode
Selecting device makes the light at edge not be fed back to, and the main zlasing mode of only part low order is fed back, and passes through filter
Wave device carries out model selection again, and the edge-light of slow axis beam both sides is made all to be filtered, and only allows the laser of part low order
Pattern passes through, and is incident to resonance, PGC demodulation and the output that laser entirety is realized on output coupling mirror.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest range caused.
Claims (10)
1. a kind of semiconductor laser beam merging apparatus, which is characterized in that the beam merging apparatus includes：It is semiconductor laser group, fast
Axis collimates microscope group, slow axis collimation microscope group, fast axle slow axis conversion equipment, Fourier transform lens, grating, expand device, mode of laser
Formula selection device, filter and output coupling mirror；
The semiconductor laser group emits the identical light beam group of outgoing direction, and the light beam group passes sequentially through the fast axis collimation mirror
Group, slow axis collimation microscope group, the fast axle slow axis conversion equipment, the Fourier transform lens, the grating and the expansion
It is projected after bundle device；
Wherein, the fast axis collimation microscope group is used to reduce the fast axis direction angle of divergence of the light beam group, and the slow axis collimates microscope group
The slow-axis direction angle of divergence for reducing the light beam group；The fast axle slow axis switch is for exchanging the fast of the light beam group
Axis direction and slow-axis direction；The Fourier transform lens is used to the light beam group carrying out Fourier transform and focusing；It is described
Grating is used to carry out diffraction to the light after focusing；The expand device is for carrying out the light after diffraction to expand processing；It is described to swash
For that will expand that treated, light beam carries out first time zlasing mode selection to optical mode selection device, with the light of selected section low order
Pattern is reflected along road；The filter is used to the zlasing mode selection device treated light beam carrying out second of mode of laser
Formula selects, and is exported so that the light beam of part low step mode is incident to the output coupling mirror by the filter.
2. beam merging apparatus according to claim 1, which is characterized in that the semiconductor laser group includes at least two half
Conductor laser；The fast axis collimation microscope group includes at least two fast axis collimation mirrors, and each fast axis collimation mirror with it is each
The corresponding setting of semiconductor laser；The slow axis collimation microscope group includes at least two slow axis collimating mirrors, and each slow axis collimates
Mirror setting corresponding with each fast axis collimation mirror.
3. beam merging apparatus according to claim 1, which is characterized in that the semiconductor laser group swashs for single tube semiconductor
Light device combines or linear array semiconductor laser combines or repeatedly array semiconductor laser combines.
4. beam merging apparatus according to claim 1, which is characterized in that the expand device is expand device of looking in the distance.
5. beam merging apparatus according to claim 1, which is characterized in that the zlasing mode selection device selects for zlasing mode
Select speculum.
6. beam merging apparatus according to claim 1, which is characterized in that the filter is spatial filter.
7. beam merging apparatus according to claim 1, which is characterized in that each fast axis collimation in the fast axis collimation microscope group
Mirror is both provided with antireflective film.
8. semiconductor laser beam merging apparatus according to claim 1, which is characterized in that in the slow axis collimation microscope group
Each slow axis collimating mirror is both provided with antireflective film.
9. beam merging apparatus according to claim 1, which is characterized in that the grating is transmissive diffraction grating.
10. beam merging apparatus according to claim 1, which is characterized in that the grating is reflection-type diffraction grating.
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| CN109557618A (en) * | 2019-01-28 | 2019-04-02 | 上海高意激光技术有限公司 | WDM device |
| CN115995756A (en) * | 2023-03-23 | 2023-04-21 | 苏州长光华芯半导体激光创新研究院有限公司 | Wavelength locking system and wavelength locking method |
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| CN115995756A (en) * | 2023-03-23 | 2023-04-21 | 苏州长光华芯半导体激光创新研究院有限公司 | Wavelength locking system and wavelength locking method |
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| Publication number | Publication date |
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| CN108551078B (en) | 2020-09-08 |
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