CN108546936A - A kind of method of low temperature preparation high-performance ZnO base transparent conductive oxide film - Google Patents

A kind of method of low temperature preparation high-performance ZnO base transparent conductive oxide film Download PDF

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CN108546936A
CN108546936A CN201810439359.7A CN201810439359A CN108546936A CN 108546936 A CN108546936 A CN 108546936A CN 201810439359 A CN201810439359 A CN 201810439359A CN 108546936 A CN108546936 A CN 108546936A
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oxide film
transparent conductive
conductive oxide
low temperature
base transparent
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CN108546936B (en
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戴英
贾倩
裴新美
陈文�
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Wuhan University of Technology WUT
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Wuhan University of Technology WUT
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1254—Sol or sol-gel processing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material

Abstract

The present invention relates to a kind of methods of low temperature preparation high-performance ZnO base transparent conductive oxide film, are as follows：1) Zinc diacetate dihydrate and the sources Al, the sources Sn are dissolved in ethylene glycol monomethyl ether according to demand, stabilizer is added dropwise in zinc-containing solution later, is filtered after heating stirring, fully ageing, the colloidal sol for obtaining clear are for use at room temperature；2) substrate is cleaned up, colloidal sol is uniformly spin-coated on substrate surface using sol evenning machine, heat treatment before then carrying out substrate repeats spin coating and preceding heat treatment process, until obtaining gel mould；3) gel mould is subjected to first step annealing in air atmosphere, second step annealing is then carried out under nitrogen or argon gas atmosphere, waits for that it is cooled to room temperature to obtain high-performance ZnO base transparent conductive oxide film.Preparation method technical process provided by the invention is simple, and can effectively reduce the lattice energy of reaction system, and film is made to shift to an earlier date crystallization at 450 DEG C or so.

Description

A kind of method of low temperature preparation high-performance ZnO base transparent conductive oxide film
Technical field
The present invention relates to optoelectronic materials technologies, and in particular to a kind of low temperature preparation high-performance ZnO base electrically conducting transparent oxygen The method of compound film.
Background technology
In recent years, with the continuous development of semiconductor technology, again to wearable from flexible display to RFID tag Electronic product gradually puts goods on the market.In order to meet the needs of ever-increasing flexible electronic market, with flexible polymer material Material substitutes hard glass and is necessary as substrate.Therefore the low temperature process that exploitation is adapted with flexible polymer material The method for preparing zno-based transparent conductive oxide film material is extremely urgent.
Currently, many scholars obtain having low-resistivity and high transmittance by different preparation methods both at home and abroad Zno-based transparent conductive oxide film, the method used mainly have magnetron sputtering method, pulsed laser deposition (PLD), atom Layer sedimentation (ALD), molecular beam epitaxy (MBE) and sol-gal process (Sol-gel) etc..Magnetron sputtering, pulsed laser deposition The methods of used by equipment it is complex, cost is very expensive, and be not suitable for batch production.In contrast, sol-gel method Technical process is simple, does not need expensive instrument and vacuum environment, of low cost, can prepare large area and have good uniformity thin Film, and the shape of substrate is not limited, raw material is that molecule or atom level are horizontal, therefore easily realize the accurate of materials chemistry metering ratio Control.Meanwhile the heat treatment temperature of film is relatively low, is suitble to prepare film on the substrate of non-refractory, be prepare at present it is thin One of common method of membrane sample.
But the zno-based transparent conductive oxide film with excellent photoelectric properties prepared at present using sol-gal process is equal Using high annealing, i.e. for annealing temperature all at 600 DEG C or more, prepared film sample just has good crystallinity and excellent Photoelectric properties, the film sample photoelectric properties prepared under low temperature are poor.To enable zno-based transparent conductive oxide film sample It is enough to apply on flexible material well, suitable method need to be used to make prepared film sample that can also have at a lower temperature There are preferable crystallinity and excellent photoelectric properties.
Invention content
The technical problem to be solved by the present invention is to aiming at the above shortcomings existing in the prior art, provide a kind of low temperature system The method of standby high-performance ZnO base transparent conductive oxide film, the lattice energy of reaction system can be effectively reduced using this method, Zno-based transparent conductive oxide film is set to shift to an earlier date crystallization, and the zno-based electrically conducting transparent prepared at a temperature of 450 DEG C or so Sull optical property and electric property are good.
In order to solve the above technical problems, technical solution provided by the invention is：
A kind of method of low temperature preparation high-performance ZnO base transparent conductive oxide film, the zno-based electrically conducting transparent are provided Sull chemical formula is SnxAlyZn1-x-yO, wherein 0≤x≤0.015,0.01≤y≤0.03 are as follows：
1) according to demand by Zinc diacetate dihydrate (Zn (CH3COO)2·2H2O) ethylene glycol monomethyl ether is dissolved in the sources Al, the sources Sn In obtain zinc-containing solution, stabilizer is added dropwise in zinc-containing solution later, filters, obtains after 50~70 DEG C of heating stirrings Clear solution is fully aged at room temperature, and the colloidal sol for obtaining clear is for use；
2) substrate is cleaned up to obtain clean substrate, is uniformly spin-coated on colloidal sol obtained by step 1) clearly using sol evenning machine The substrate surface of wash clean, the substrate for being then coated with colloidal sol carry out preceding heat treatment, repeat spin coating and preceding heat treatment process, directly To obtaining gel mould；
3) gel mould obtained by step 2) is subjected to first step annealing in air atmosphere first, then in nitrogen or argon Second step annealing is carried out under gas atmosphere, waits for that it is cooled to room temperature to obtain high-performance ZnO base transparent conductive oxide film.
By said program, zinc ion concentration is 0.2~0.5mol/L in the step 1) zinc-containing solution.
By said program, the step 1) sources Al are ANN aluminium nitrate nonahydrate (Al (NO3)3·9H2O), the sources Al and zinc-containing solution Middle Zn2+Molar ratio be 0.01~0.04：1.
By said program, the step 1) sources Sn are Tin tetrachloride pentahydrate (SnCl4·5H2O), the sources Sn and zinc-containing solution Middle Zn2+Molar ratio be 0~0.02：1.
By said program, the step 1) stabilizer is ethanol amine, mole of ethanol amine and metal ion in zinc-containing solution Than being 0.9~1.1：1.
By said program, the step 2) substrate is one kind in quartz, glass, flexible glass.
By said program, the rotating speed of sol evenning machine is 2000~4000rpm in step 2), and spin-coating time is 20~30s.
By said program, step 2) the preceding heat treatment condition is：5min is heated at 150 DEG C, then at 300 DEG C Lower heating 10min.
By said program, the process conditions of the step 3) first step annealing are：At room temperature with 2~5 DEG C/min's Rate is warming up to 400~600 DEG C, keeps the temperature 0.5~2h.
By said program, the process conditions of step 3) the second step annealing are：At room temperature with the rate of 5 DEG C/min 400~600 DEG C are warming up to, 0.5~2h is kept the temperature.
The invention also includes the zno-based transparent conductive oxide film prepared according to the above method, the zno-based is transparent to lead Oxide film chemical formula is SnxAlyZn1-x-yO, wherein 0≤x≤0.015,0.01≤y≤0.03.
Preferably, the zno-based transparent conductive oxide film thickness is 100~600nm.
The present invention effectively reduces the lattice energy of the reaction system by doping vario-property within the scope of suitable doping ratio, Film crystal is set to shift to an earlier date crystallization under 450 DEG C or so of annealing temperature, to obtain photoelectric properties at a temperature of 450 DEG C or so More excellent film sample.If the excessively high lattice order that can cause inside film of doping ratio declines, anneal at low temperature When be difficult to ensure its film have good crystallinity.The present invention can reduce reaction system lattice under suitable doping ratio Can, retain the order of its lattice while so that film is shifted to an earlier date crystallization under 450 DEG C or so of annealing temperature as far as possible again, makes It is with good crystalline state, to have excellent photoelectric properties.
The beneficial effects of the present invention are：1, preparation method technical process provided by the invention is simple, does not need costliness Instrument and vacuum environment, of low cost, the film that can be prepared large area and have good uniformity do not limit the shape of substrate, and this Inventive method can effectively reduce the lattice energy of reaction system, and film is made to shift to an earlier date crystallization at 450 DEG C or so.2, prepared by the present invention Zno-based transparent conductive oxide film ingredient is easy to accurately control, and heat treatment temperature is relatively low, is suitble in flexible polymer substrate It prepares, and Film Optics transmitance is high, electric property is excellent.
Description of the drawings
Fig. 1 is the XRD spectrum of the film sample prepared by comparative example 1 of the present invention and embodiment 1 and embodiment 3；
Fig. 2 is the TG-DSC curves of the ZnO xerogel prepared by comparative example 1；
Fig. 3 is the TG-DSC curves of the SAZO xerogel prepared by embodiment 3；
Fig. 4 penetrates spectrum for the optics of the film sample prepared by comparative example 1 and embodiment 1 and 3；
Fig. 5 is the XRD spectrum of the AZO films of the different Al volumes prepared by embodiment 2；
Fig. 6 is the optics of the AZO films of the different Al volumes prepared by embodiment 2 through spectrum；
Fig. 7 is the XRD spectrum of the SAZO films of the different Sn volumes prepared by embodiment 4；
Fig. 8 is the optics of the SAZO films of the different Sn volumes prepared by embodiment 4 through spectrum.
Specific implementation mode
To make those skilled in the art more fully understand technical scheme of the present invention, below in conjunction with the accompanying drawings to the present invention make into One step is described in detail.
Comparative example 1
A kind of preparation method of low temperature high-performance conductive oxide film, includes the following steps：
(1) chemical composition Zn is pressed1.0The stoichiometric ratio of O elements weighs 3.3259g Zinc diacetate dihydrates (Zn (CH3COO)2·2H2O), after being dissolved in the solvent ethylene glycol methyl ether of 20mL, 0.9mL ethanol amines dropper is added dropwise Enter in solution, constant volume makes collosol concentration be 0.3M/L again later, filters, obtains after matched solution is heated to 60 DEG C of stirring 3h Clear solution stands 48h at room temperature, it is made fully to be aged, and the colloidal sol for forming clear is for use；
(2) after quartz substrate being cleaned by ultrasonic 20min in acetone, ethyl alcohol and deionized water respectively, cleaning is obtained Colloidal sol is uniformly spin-coated on the substrate surface cleaned up, spin-coating time using sol evenning machine by substrate under the rotating speed of 3000rpm For 30s, the uniform wet film of spin coating is placed on to heat treatment before being carried out on roasting glue machine, prior to heating 5min at 150 DEG C of low temperature, then at height 10min is heated at 300 DEG C of temperature, gluing, preceding heat treatment process is repeated 10 times, obtains the gel mould by preceding heat treatment；
(3) it by the gel mould Jing Guo preceding heat treatment, in air atmosphere, is warming up to moves back with the rate of 2 DEG C/min at room temperature After fiery annealing temperature 1h, then in N2In atmosphere from room temperature with the rate of 5 DEG C/min be warming up to annealing temperature annealing 1h (annealing temperature Degree is respectively 450 DEG C, 600 DEG C), it waits for that it is cooled to room temperature, finally obtains undoped pure ZnO film sample, film thickness is 230nm。
Fig. 1 (a) and (d) are XRD spectrum of this comparative example respectively through 450 DEG C and 600 DEG C obtained pure ZnO films of annealing. As seen from the figure, sample crystallinity at 450 DEG C is very low, and crystallization is incomplete, when annealing temperature is 600 DEG C, the knot of film sample Brilliant degree is intact.
Fig. 2 is that prepared ZnO xerogel is measured in constant air draught with the heating of the heating rate of 5 DEG C/min TG-DSC curves.As seen from the figure, there are two endothermic peak and two exothermic peaks during heat treatment for ZnO xerogel.252.6 DEG C endothermic peak is caused by ethylene glycol monomethyl ether evaporation in xerogel；327.4 DEG C of endothermic peaks correspond to stabilizer diethanol amine Evaporation process.450.9 DEG C and 479.2 DEG C of exothermic peaks correspond to diethanol amine and Zn in gel2+Formed complex compound oxidation and The nucleating growth process of decomposition reaction and ZnO.
Fig. 4 (a) is the optics of the film sample (450 DEG C of annealing) prepared by this comparative example through spectrum, as seen from the figure, film Transmitance of the sample in visible-range is 85% or more, and it falls sharply in the light transmission rate of ultraviolet band, and in wavelength There is a precipitous ABSORPTION EDGE in 380nm or so, this is determined by the optical band gap of ZnO material itself.
Undoped ZnO film sample surveys its resistivity using four probe resistance rates, since its resistance is excessive, exceeds instrument Range can not be measured.
Embodiment 1
A kind of preparation method of low temperature high-performance conductive oxide film, includes the following steps：
(1) chemical composition Al is pressed0.02Zn0.98The stoichiometric ratio of O elements weighs 3.2594g Zinc diacetate dihydrates (Zn (CH3COO)2·2H2) and 0.1137g ANN aluminium nitrate nonahydrates (Al (NO O3)3·9H2O), it is dissolved in the solvent second two of 20mL After in alcohol methyl ether, by with metal ion equimolar than ethanol amine 0.9mL be added dropwise in solution with dropper, constant volume makes again later Collosol concentration is 0.3M/L, is filtered after matched solution is heated to 60 DEG C of stirring 3h, obtained clear solution is stood at room temperature 48h makes it fully be aged, and the colloidal sol for forming clear is for use；
(2) after quartz substrate being cleaned by ultrasonic 20min in acetone, ethyl alcohol and deionized water respectively, cleaning is obtained Colloidal sol is uniformly spin-coated on the substrate surface cleaned up, spin-coating time using sol evenning machine by substrate under the rotating speed of 3000rpm For 30s, the uniform wet film of spin coating is placed on to heat treatment before being carried out on roasting glue machine, prior to heating 5min at 150 DEG C of low temperature, then at height 10min is heated at 300 DEG C of temperature, gluing, preceding heat treatment process is repeated 10 times, obtains the gel mould by preceding heat treatment；
(3) by the gel mould Jing Guo preceding heat treatment, from being warming up at room temperature with the rate of 2 DEG C/min in air atmosphere After 450 DEG C of annealing 1h, then in N2From 450 DEG C of annealing 1h are warming up at room temperature with the rate of 5 DEG C/min in atmosphere, wait for that it is cooled to Room temperature finally obtains low temperature high-performance AZO film samples.
Fig. 1 (b) is the XRD spectrum of the AZO films prepared by the present embodiment, and as seen from the figure, volume is the film of 2at.% For sample compared with the film sample of undoped ZnO, diffraction peak intensity is significantly raised, illustrates the crystallization for mixing Al to film sample Degree improves significantly.This, which is primarily due to mix Al, can be effectively reduced the lattice energy of reaction system, make film crystal compared with Shift to an earlier date crystallization under low annealing temperature.
Fig. 4 (b) is the optics of the film sample prepared by the present embodiment through spectrum, as seen from the figure, prepared film sample Optics light transmittance of the product in visible light region can reach 85% or more.Compared with undoped pure ZnO film, film sample exists " blue shift " occurs for the ABSORPTION EDGE in black light area, shows that its optical band gap value broadens, i.e., Burstein-Moss effects are aggravated.
Embodiment 2
A kind of preparation method of low temperature high-performance conductive oxide film, includes the following steps：
(1) chemical composition, Al are pressed0.01Zn0.99O(1#)、Al0.03Zn0.97O (2#) and Al0.04Zn0.96O (3#) element Stoichiometric ratio has weighed Zinc diacetate dihydrate (Zn (CH3COO)2·2H2) and ANN aluminium nitrate nonahydrate (Al (NO O3)3·9H2O), Specific dosage such as table 1, after being dissolved in the solvent ethylene glycol methyl ether of 20mL, by with metal ion equimolar than 0.9mL Ethanol amine is added dropwise with dropper in solution, and constant volume makes collosol concentration be 0.3M/L again later, and matched solution is heated to 60 DEG C It is filtered after stirring 3h, obtained clear solution stands 48h at room temperature, it is made fully to be aged, and the colloidal sol for forming clear waits for With；
Table 1
(2) after quartz substrate being cleaned by ultrasonic 20min in acetone, ethyl alcohol and deionized water respectively, cleaning is obtained Colloidal sol is uniformly spin-coated on the substrate surface cleaned up, spin-coating time using sol evenning machine by substrate under the rotating speed of 3000rpm For 30s, the uniform wet film of spin coating is placed on to heat treatment before being carried out on roasting glue machine, prior to heating 5min at 150 DEG C of low temperature, then at height 10min is heated at 300 DEG C of temperature, gluing, preceding heat treatment process is repeated 10 times, obtains the gel mould by preceding heat treatment；
(3) by the gel mould Jing Guo preceding heat treatment, from being warming up at room temperature with the rate of 2 DEG C/min in air atmosphere After 450 DEG C of annealing 1h, then in N2From 450 DEG C of annealing 1h are warming up at room temperature with the rate of 5 DEG C/min in atmosphere, wait for that it is cooled to Room temperature finally obtains low temperature high-performance AZO film samples.
Fig. 5 be the present embodiment prepared by different Al volumes AZO films XRD spectrum, as seen from the figure, volume be 1~ For the film sample of 3at.% compared with the film sample of undoped ZnO, diffraction peak intensity is significantly raised, illustrates to mix Al to thin The crystallinity of membrane sample improves significantly.This, which is primarily due to mix Al, can effectively reduce the oxygenolysis of the reaction system Temperature and crystallization temperature make film crystal shift to an earlier date crystallization in lower temperature to reduce its lattice energy.When volume reaches 4% When, the crystallinity of film is declined slightly compared with the film sample of undoped ZnO, this is primarily due to excessive Al3+Substitution Zn2+Position in lattice seriously destroys the original structure of crystal, makes the reduction of its crystallinity.It can be seen that suitably mixing Miscellaneous ratio is most important to the crystallization of film sample.
Fig. 6 is that the optics of the AZO films of the different Al volumes prepared by the present embodiment penetrates spectrum, as seen from the figure, all thin Average transmittance of the membrane sample in visible light region can reach 85% or more.With the increase of the volume value of Al, all AZO are thin " blue shift " occurs for ABSORPTION EDGE of the membrane sample in black light area, shows that its optical band gap value broadens, i.e. Burstein-Moss effects Aggravation.The introducing of Al elements can effectively reduce the resistivity of film sample, improve its electric property.And with the increasing of volume value Adding, the resistivity of prepared AZO films is gradually reduced, when volume value is 1~3at.%, the electricity of prepared AZO films Resistance rate is minimum, is 6.0 × 10-3~7 × 10-3Ω·cm。
Embodiment 3
A kind of preparation method of low temperature high-performance conductive oxide film, includes the following steps：
(1) chemical composition Sn is pressed0.015Al0.02Zn0.965The stoichiometric ratio of O elements weighs 3.2095g Zinc diacetate dihydrates (Zn(CH3COO)2·2H2O), 0.1137g ANN aluminium nitrate nonahydrates (Al (NO3)3·9H2O) 0.1137g and 0.0797g five hydrations four Stannic chloride (SnCl4·5H2O), after being dissolved in the solvent ethylene glycol methyl ether of 20mL, by with metal ion equimolar than Ethanol amine (0.9mL) is added dropwise with dropper in solution, and constant volume makes collosol concentration be 0.3M/L again later, and matched solution is heated It is filtered after to 60 DEG C of stirring 3h, obtained clear solution stands 48h at room temperature, it is made fully to be aged, and forms clear Colloidal sol is for use；
(2) after quartz substrate being cleaned by ultrasonic 20min in acetone, ethyl alcohol and deionized water respectively, cleaning is obtained Colloidal sol is uniformly spin-coated on the substrate surface cleaned up, spin-coating time using sol evenning machine by substrate under the rotating speed of 3000rpm For 30s, the uniform wet film of spin coating is placed on to heat treatment before being carried out on roasting glue machine, prior to heating 5min at 150 DEG C of low temperature, then at height 10min is heated at 300 DEG C of temperature, gluing, preceding heat treatment process is repeated 10 times, obtains the gel mould by preceding heat treatment；
(3) by the gel mould Jing Guo preceding heat treatment, from being warming up at room temperature with the rate of 2 DEG C/min in air atmosphere At a temperature of 450 DEG C after annealing 1h, then it is placed on N2In atmosphere from room temperature with the rate of 5 DEG C/min be warming up to 450 DEG C annealing 1h, It waits for that it is cooled to room temperature, finally obtains low temperature high-performance SAZO film samples.
Fig. 1 (c) is the film XRD spectrum prepared by the present embodiment.As seen from the figure, Sn-Al is co-doped with prepared film sample Product are compared with Fig. 1 (a) and (b), and diffraction peak intensity is significantly raised, this is primarily due to：Sn4+Radius beWith Zn2+RadiusIt is not much different, Sn4+Doping film crystal will not be made to generate too big deformation and distortion of lattice, favorably In its crystallinity of improvement, and it can reduce the required crystallization temperature of film crystal, and film is made to shift to an earlier date crystallization.
Fig. 3 is the TG-DSC curves of SAZO xerogel, two absorption peak corresponds to solvent ethylene glycol methyl ether and stabilization respectively The evaporation process of agent ethanol amine, exothermic peak are then primarily due to the Zn in gel2+、Al3+And Sn4+It is formed and is complexed with ethanol amine The oxidation and decomposition reaction of object and the nucleating growth process of crystal grain.It is noted that due to Al3+And Sn4+Presence, Heat release position 450.9 DEG C and 479.2 DEG C of 366.27 DEG C of the position of the exothermic peak of SAZO than pure ZnO is low, this illustrate doping from The introducing of son can effectively reduce the lattice energy of the reaction system, and film crystal is made to shift to an earlier date crystallization in lower temperature, to Improve the crystallization degree of film, improves the photoelectric properties of film at low temperature.
Fig. 4 (c) is that the optics of the present embodiment film sample prepared at 450 DEG C penetrates spectrum, as seen from the figure, prepared Average transmittance of the film sample in visible light region can reach 85% or more.With Fig. 4 (a) and (b) transmission of film sample Rate is suitable, and " blue shift " occurs for ABSORPTION EDGE of its film sample in black light area, shows that its optical band gap value broadens, i.e., Burstein-Moss effects are aggravated.
Embodiment 4
A kind of preparation method of low temperature high-performance conductive oxide film, includes the following steps：
(1) chemical composition Sn is pressed0.01Al0.02Zn0.97O (4#) and Sn0.02Al0.02Zn0.96The chemistry meter of O (5#) element Amount is than having weighed Zinc diacetate dihydrate (Zn (CH3COO)2·2H2O), ANN aluminium nitrate nonahydrate (Al (NO3)3·9H2O) 0.1137g and Tin tetrachloride pentahydrate (SnCl4·5H2O), specific dosage such as table 2, after being dissolved in the solvent ethylene glycol methyl ether of 20mL, By with metal ion equimolar than ethanol amine (0.9mL) be added dropwise in solution with dropper, constant volume makes collosol concentration again later For 0.3M/L, filtered after matched solution is heated to 60 DEG C of stirring 3h, obtained clear solution stands 48h at room temperature, makes it Fully ageing, the colloidal sol for forming clear are for use；
Table 2
(2) after quartz substrate being cleaned by ultrasonic 20min in acetone, ethyl alcohol and deionized water respectively, cleaning is obtained Colloidal sol is uniformly spin-coated on the substrate surface cleaned up, spin-coating time using sol evenning machine by substrate under the rotating speed of 3000rpm For 20s, the uniform wet film of spin coating is placed on to heat treatment before being carried out on roasting glue machine, prior to heating 5min at 150 DEG C of low temperature, then at height 10min is heated at 300 DEG C of temperature, gluing, preceding heat treatment process is repeated 10 times, obtains the gel mould by preceding heat treatment；
(3) by the gel mould Jing Guo preceding heat treatment, from being warming up at room temperature with the rate of 2 DEG C/min in air atmosphere At a temperature of 450 DEG C after annealing 1h, then it is placed on N2In atmosphere from room temperature with the rate of 5 DEG C/min be warming up to 450 DEG C annealing 1h, It waits for that it is cooled to room temperature, finally obtains low temperature high-performance SAZO film samples.
Fig. 7 is the XRD spectrum of the SAZO films of the different Sn volumes prepared by the present embodiment, as seen from the figure, and undoped The AZO films of element S n are compared, and Sn volumes are the characteristic diffraction peak of the SAZO films of 1at.%~1.5at.% in all directions Intensity increases, this is primarily due to：Sn4+Radius beWith Zn2+RadiusIt is not much different, Sn4+Mix It is miscellaneous that film crystal will not be made to generate too big deformation and distortion of lattice, be conducive to improve its crystallinity.And it can reduce film The required crystallization temperature of crystal, makes film shift to an earlier date crystallization.But with being continuously increased for Sn volumes, film sample is in all directions Diffraction peak intensity constantly reduce, the halfwidth of diffraction maximum also gradually broadens, this is primarily due to：Sn4+After in into lattice, by Gradually instead of Zn in lattice2+Original position, become substitution atoms, this can destroy the original crystal structure of the film sample, make At a degree of distortion of lattice, crystal is made to generate a degree of deformation.It can be seen that suitable doping ratio is to film sample The crystallization of product is most important.
Fig. 8 is the optics of the SAZO films of the different Sn volumes prepared by the present embodiment through spectrum, as seen from the figure, preparation All film samples reach 88% or more in the optical transmittance of visible region, and with the increase of volume, film sample is steep High and steep ABSORPTION EDGE shows the trend moved to shortwave length direction, i.e., so-called " blue shift " phenomenon, this is primarily due to Burstein-Moss effects increase caused.
The resistivity of film sample is tested using four probe resistance rate testers, Sn-Al, which is co-doped with, effectively to drop The resistivity of low film sample improves its electric property.In a certain range, prepared with the increase of Sn volume values The resistivity of SAZO films is gradually reduced, when Sn volume values are 1at.%~1.5at.%, the electricity of prepared SAZO films Resistance rate is minimum, is 5.0 × 10-3~5.5 × 10-3Ω·cm。

Claims (10)

1. a kind of method of low temperature preparation high-performance ZnO base transparent conductive oxide film, the zno-based transparent conductive oxide Film chemical formula is SnxAlyZn1-x-yO, wherein 0≤x≤0.015,0.01≤y≤0.03, which is characterized in that specific steps are such as Under：
1) according to demand by Zinc diacetate dihydrate (Zn (CH3COO)2·2H2O it) is dissolved in ethylene glycol monomethyl ether and obtains with the sources Al, the sources Sn To zinc-containing solution, stabilizer is added dropwise in zinc-containing solution later, is filtered after 50~70 DEG C of heating stirrings, obtained clarification Solution is fully aged at room temperature, and the colloidal sol for obtaining clear is for use；
2) substrate is cleaned up to obtain clean substrate, colloidal sol obtained by step 1), which is uniformly spin-coated on cleaning, using sol evenning machine does Net substrate surface, the substrate for being then coated with colloidal sol carry out preceding heat treatment, repeat spin coating and preceding heat treatment process, until To gel mould；
3) gel mould obtained by step 2) is subjected to first step annealing in air atmosphere first, then in nitrogen or argon gas gas Second step annealing is carried out under atmosphere, waits for that it is cooled to room temperature to obtain high-performance ZnO base transparent conductive oxide film.
2. the method for low temperature preparation high-performance ZnO base transparent conductive oxide film according to claim 1, feature exist In zinc ion concentration is 0.2~0.5mol/L in the step 1) zinc-containing solution.
3. the method for low temperature preparation high-performance ZnO base transparent conductive oxide film according to claim 1, feature exist In the step 1) sources Al are ANN aluminium nitrate nonahydrate, the sources Al and Zn in zinc-containing solution2+Molar ratio be 0.01~0.04：1, institute It is Tin tetrachloride pentahydrate, the sources Sn and Zn in zinc-containing solution to state the sources Sn2+Molar ratio be 0~0.02：1.
4. the method for low temperature preparation high-performance ZnO base transparent conductive oxide film according to claim 1, feature exist It is ethanol amine in, the step 1) stabilizer, the molar ratio of ethanol amine and metal ion in zinc-containing solution is 0.9~1.1：1.
5. the method for low temperature preparation high-performance ZnO base transparent conductive oxide film according to claim 1, feature exist In the step 2) substrate is one kind in quartz, glass, flexible glass.
6. the method for low temperature preparation high-performance ZnO base transparent conductive oxide film according to claim 1, feature exist In the rotating speed of sol evenning machine is 2000~4000rpm in step 2), and spin-coating time is 20~30s.
7. the method for low temperature preparation high-performance ZnO base transparent conductive oxide film according to claim 1, feature exist In step 2) the preceding heat treatment condition is：5min is heated at 150 DEG C, then heats 10min at 300 DEG C.
8. the method for low temperature preparation high-performance ZnO base transparent conductive oxide film according to claim 1, feature exist In the process conditions of the step 3) first step annealing are：400 are warming up to the rate of 2~5 DEG C/min at room temperature~ 600 DEG C, keep the temperature 0.5~2h.
9. the method for low temperature preparation high-performance ZnO base transparent conductive oxide film according to claim 1, feature exist In the process conditions of step 3) the second step annealing are：At room temperature 400~600 are warming up to the rate of 5 DEG C/min DEG C, keep the temperature 0.5~2h.
10. the high-performance ZnO base transparent conductive oxide film prepared according to claim 1-9 the methods, which is characterized in that The zno-based transparent conductive oxide film chemical formula is SnxAlyZn1-x-yO, wherein 0≤x≤0.015,0.01≤y≤ 0.03, the zno-based transparent conductive oxide film thickness is 100~600nm.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109830586A (en) * 2019-02-19 2019-05-31 芜湖德豪润达光电科技有限公司 The preparation method and light emitting diode of transparency conducting layer
CN112645606A (en) * 2020-12-24 2021-04-13 东华大学 Conductive ZnO film and preparation method thereof
CN113851586A (en) * 2021-01-06 2021-12-28 北京工商大学 Composite film, preparation method thereof and solar cell comprising composite film
CN116053368A (en) * 2023-04-03 2023-05-02 南昌凯捷半导体科技有限公司 Red light LED chip with ZnO sacrificial layer and manufacturing method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0354769A2 (en) * 1988-08-09 1990-02-14 Tosoh Corporation Zinc oxide sintered body and preparation process thereof
CN101510513A (en) * 2009-01-16 2009-08-19 哈尔滨工程大学 Method for preparing zinc oxide thin-film transistor by sol gel method
CN103496732A (en) * 2013-09-30 2014-01-08 华南理工大学 Preparation method of high-conductivity aluminum-doped zinc oxide nano powder

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0354769A2 (en) * 1988-08-09 1990-02-14 Tosoh Corporation Zinc oxide sintered body and preparation process thereof
CN101510513A (en) * 2009-01-16 2009-08-19 哈尔滨工程大学 Method for preparing zinc oxide thin-film transistor by sol gel method
CN103496732A (en) * 2013-09-30 2014-01-08 华南理工大学 Preparation method of high-conductivity aluminum-doped zinc oxide nano powder

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109830586A (en) * 2019-02-19 2019-05-31 芜湖德豪润达光电科技有限公司 The preparation method and light emitting diode of transparency conducting layer
CN112645606A (en) * 2020-12-24 2021-04-13 东华大学 Conductive ZnO film and preparation method thereof
CN112645606B (en) * 2020-12-24 2022-02-01 东华大学 Conductive ZnO film and preparation method thereof
CN113851586A (en) * 2021-01-06 2021-12-28 北京工商大学 Composite film, preparation method thereof and solar cell comprising composite film
CN113851586B (en) * 2021-01-06 2022-12-20 北京工商大学 Composite film, preparation method thereof and solar cell comprising composite film
CN116053368A (en) * 2023-04-03 2023-05-02 南昌凯捷半导体科技有限公司 Red light LED chip with ZnO sacrificial layer and manufacturing method thereof

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