CN108536339A - Novel capacitance type touch screen - Google Patents
Novel capacitance type touch screen Download PDFInfo
- Publication number
- CN108536339A CN108536339A CN201810277413.2A CN201810277413A CN108536339A CN 108536339 A CN108536339 A CN 108536339A CN 201810277413 A CN201810277413 A CN 201810277413A CN 108536339 A CN108536339 A CN 108536339A
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- CN
- China
- Prior art keywords
- touch screen
- shadow layer
- layer
- transparent electrode
- capacitance type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Position Input By Displaying (AREA)
Abstract
The invention discloses a kind of novel capacitance type touch screens comprising substrate, first disappear shadow layer and transparent electrode.Wherein, the transparent electrode is located on the substrate, and the described first shadow layer that disappears is located on the substrate and the transparent electrode.The present invention reduces the reflected light of transparent electrode etched mark, and can improve light transmission rate, so as to improve the visual effect of touch screen by arranging that first with anti-reflection function of single layer structure disappears shadow layer on the substrate of capacitance touch screen.
Description
Technical field
The present invention relates to capacitance induction touch panel more particularly to novel capacitance type touch screens.
Background technology
The one kind of touch screen as human-computer interaction is a kind of transparent input system, and touch-control is touched by user's finger
Panel operates to realize.Nowadays, stronger and stronger with touch screen industry development, people also can be more to the pursuit of touch screen
It is high.Existing touch screen generally comprises substrate and transparent electrode thereon, and transparent electrode therein is usually tin indium oxide ITO materials
Material, passes through production technology（Such as it etches）Processing tin indium oxide ito film layer formation transparent circuit pattern, but etched mark
In the presence of affecting capacitance touch screen visual effect.
To improve visual effect, traditional way is between substrate and ito transparent electrode plus the one layer of shadow layer that disappears.But with working as
The development of modern display technology, requirement of the people to quality are consequently increased, some products cannot only have been expired by the one layer of shadow layer that disappears
Requirement of the sufficient people to touch screen visual effect.
Therefore, those skilled in the art is dedicated to developing a kind of novel capacitance type touch screen, not only realizes to etched mark
Disappear shadow, and can improve the light transmission rate of capacitance touch screen.
Invention content
To achieve the above object, the present invention in a preferred embodiment, provides a kind of novel capacitance type touch screen,
It includes substrate, first disappears shadow layer and transparent electrode, and the transparent electrode is located on the substrate, and described first disappears shadow layer position
On the substrate and the transparent electrode.
Further, the described first refractive index n for disappearing shadow layer is 1.7 ~ 2.2；Described first disappear shadow layer thickness t=（2k+
1）× λ/4n, wherein wavelength X=550nm, k are the integer more than or equal to 0.
Further, ranging from 5 ~ 3300 nm of thickness t.
Further, the described first material for disappearing shadow layer is glue.
Further, the capacitance touch screen further includes second disappearing shadow layer, described second disappear shadow layer be located at the substrate and
Between the transparent electrode, and disappear under shadow layer described first.
Further, the described second refractive index for disappearing shadow layer is 1.7 ~ 2.2, and thickness is 3 ~ 500nm.
Further, the material of the shadow layer that disappears is titanium dioxide, alundum (Al2O3), niobium pentaoxide, zinc sulphide, three oxygen
Change one or more of two yttriums and zirconium dioxide.
The present invention additionally provides a kind of novel capacitance type touch screen, has on the substrate in other preferred embodiments
There is a silicon dioxide layer, the described first shadow layer that disappears is located on the silicon dioxide layer and the transparent electrode；Described first disappears shadow
The refractive index n of layer is 1.7 ~ 2.2, thickness t=（2k+1）× λ/4n, wherein wavelength X=550nm, k are the integer more than or equal to 0.
Further, the thickness of the silicon dioxide layer is 3-50nm.
Further, ranging from 5 ~ 3300 nm of thickness t.
Further, the capacitance touch screen further includes second disappearing shadow layer, and the described second shadow layer that disappears is located at the titanium dioxide
Between silicon layer and the transparent electrode, and disappear under shadow layer described first.
Further, the described second refractive index for disappearing shadow layer is 1.7 ~ 2.2, and thickness is 3 ~ 500nm.
Further, the material of the transparent electrode layer is one in ITO, AZO, nano silver wire, graphene, carbon nanotube
It is a or multiple.
It can be seen that the antireflective capacitance touch screen of the present invention has one layer of single layer knot on its substrate and transparent electrode
The shadow layer that disappears of structure（First disappears shadow layer）, completely cover the transparent electrode and fill the etching trace of transparent electrode, due to its folding
The rate of penetrating be chosen for it is suitable with transparent electrode, so as to reduce have etching trace position and transparent electrode between light transmission it is poor
Value not only weakens influence of the transparent electrode etching trace to vision, and can increase the light transmission rate of capacitance touch screen；Separately
Outside, the shadow layer that disappears additionally being arranged on substrate and transparent electrode（Second disappears shadow layer）, reach the further shadow effect that disappears.
The technique effect of the design of the present invention, concrete structure and generation is described further below with reference to attached drawing, with
It is fully understood from the purpose of the present invention, feature and effect.
Description of the drawings
Fig. 1 shows in a preferred embodiment, the structure of novel capacitance type touch screen of the invention.
Fig. 2 shows in another preferred embodiment, the structure of novel capacitance type touch screen of the invention.
Specific implementation mode
As illustrated in fig. 1 and 2, in a preferred embodiment, capacitance touch screen of the invention includes substrate 1, second disappears shadow
Layer 2, transparent electrode 3 and first disappear shadow layer 4；And in another preferred embodiment, capacitance touch screen of the invention includes substrate
1, silicon dioxide layer 11, the second disappear shadow layer 2, transparent electrode 3 and first disappear shadow layer 4, and the silicon dioxide layer 11 wherein on substrate 1 is made
The sodium ion diffusion in substrate is prevented for bottom.
It is described below by way of the manufacturing process to the capacitance touch screen in above-mentioned second preferred embodiment, thus should
The structure of capacitance touch screen is also described simultaneously, and is based on the description, the capacitance touch in above-mentioned first preferred embodiment
The structure of screen is also clear.
Specifically, silica is formed in substrate 1（SiO2）Before layer 11, first by the cleaning of substrate 1, drying, keep clean,
It is passed through oxygen by target of silicon using magnetron sputtering coater afterwards, deposition thickness is about the SiO of 3 ~ 50 nm on substrate 12Layer
11, refractive index is 1.4 ~ 1.6, and the sodium ion diffusion in substrate is prevented as bottom.
Then, in SiO2Second is formed on layer 11 to disappear shadow layer 2, thickness is 3 ~ 500 nm, refractive index is 1.7 ~
2.2, material can be titanium dioxide（TiO2）, alundum (Al2O3)（Al2O3）, niobium pentaoxide（Nb2O5）, zinc sulphide（ZnS）、
Yttria（Y2O3）, zirconium dioxide（ZrO2）Deng, but these materials are not limited to, it can select as needed.This second disappears shadow layer
2 can provide antireflective technique effect simultaneously, improve the light transmission rate of capacitance touch screen.
Then, disappear above-mentioned second and formed on shadow layer 2（Such as it is deposited by magnetron sputtering method）One layer of ito thin film layer,
Transparent electrode 3 is made, which is 5 ~ 120 nm, and refractive index is 1.7 ~ 2.2, as conductive layer.The layer is passed through later
The techniques such as photoetching, etching make conducting wire, that is, form the transparent electrode 3 of ITO.
Finally, it is 5 ~ 3300 nm, the glue that light refractive index is 1.7 ~ 2.2 that a tunic thickness is coated on transparent electrode 3
Disappear shadow layer 4 as first.The transparent electrode 3 of ITO and filling etching trace is completely covered in this layer（Gap i.e. between ITO pattern）.
Preferably, first disappears shadow layer 4, thickness t=（2k+1）× λ/4n, wherein n is the first refractive index for disappearing shadow layer 4, λ
For wavelength, λ=550nm, k are the integer more than or equal to 0.Due to the optical parameters such as the refractive index of glue material, transmissivity and ITO
Material is close, can reduce the transmissivity difference having between etching trace and transparent electrode 3, to further reach antireflective
Light, the purpose for increasing transmitted light.
It should be noted that in other embodiments of the invention, above-mentioned second can not be made and disappeared shadow layer 2, and only
By first disappear shadow layer 4 realize novel capacitance type touch screen, the structure of such capacitance touch screen is also can be from above-mentioned making
Process directly undoubtedly free burial ground for the destitute determine.
The preferred embodiment of the present invention has been described in detail above.It should be appreciated that those skilled in the art without
It needs creative work according to the present invention can conceive and makes many modifications and variations.Therefore, the technology of all the art
Personnel are available by logical analysis, reasoning, or a limited experiment on the basis of existing technology under this invention's idea
Technical solution, all should be in the protection domain being defined in the patent claims.
Claims (10)
1. a kind of novel capacitance type touch screen, which is characterized in that disappear shadow layer and transparent electrode including substrate, first, it is described transparent
Electrode is located on the substrate, and the described first shadow layer that disappears is located on the substrate and the transparent electrode.
2. novel capacitance type touch screen as described in claim 1, which is characterized in that described first disappear shadow layer refractive index n be
1.7~2.2；Described first disappear shadow layer thickness t=（2k+1）× λ/4n, wherein wavelength X=550nm, k are whole more than or equal to 0
Number.
3. novel capacitance type touch screen as claimed in claim 2, which is characterized in that ranging from 5 ~ 3300nm of thickness t.
4. the novel capacitance type touch screen as described in any one in claim 1-3, which is characterized in that described first disappears shadow layer
Material be glue.
5. novel capacitance type touch screen as claimed in claim 4, which is characterized in that further include second disappearing shadow layer, described second
Shadow layer disappear between the substrate and the transparent electrode, and disappears under shadow layer described first.
6. novel capacitance type touch screen as claimed in claim 5, which is characterized in that described second disappear shadow layer refractive index be
1.7 ~ 2.2, thickness is 3 ~ 500nm.
7. such as novel capacitance type touch screen described in claim 5 or 6, which is characterized in that described second disappear shadow layer material be
One or more of titanium dioxide, alundum (Al2O3), niobium pentaoxide, zinc sulphide, yttria and zirconium dioxide.
8. novel capacitance type touch screen as described in claim 1, which is characterized in that there is silicon dioxide layer on the substrate,
The described first shadow layer that disappears is located on the silicon dioxide layer and the transparent electrode；Described first disappear shadow layer refractive index n be
1.7 ~ 2.2, thickness t=（2k+1）× λ/4n, wherein wavelength X=550nm, k are the integer more than or equal to 0.
9. novel capacitance type touch screen as claimed in claim 8, which is characterized in that ranging from 5 ~ 3300nm of thickness t.
10. novel capacitance type touch screen as claimed in claim 8 or 9, which is characterized in that further include second disappearing shadow layer, it is described
Second disappears shadow layer between the silicon dioxide layer and the transparent electrode, and disappears under shadow layer described first；Described
Two refractive index for disappearing shadow layer are 1.7 ~ 2.2, and thickness is 3 ~ 500 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810277413.2A CN108536339A (en) | 2018-03-30 | 2018-03-30 | Novel capacitance type touch screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810277413.2A CN108536339A (en) | 2018-03-30 | 2018-03-30 | Novel capacitance type touch screen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108536339A true CN108536339A (en) | 2018-09-14 |
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ID=63482073
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810277413.2A Pending CN108536339A (en) | 2018-03-30 | 2018-03-30 | Novel capacitance type touch screen |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109358770A (en) * | 2018-10-30 | 2019-02-19 | 合肥鑫晟光电科技有限公司 | Touch panel and its manufacturing method, touch control display apparatus |
| CN113791703A (en) * | 2021-08-26 | 2021-12-14 | 牧东光电科技有限公司 | Etching-free touch display screen and manufacturing method thereof |
| CN114138128A (en) * | 2020-09-03 | 2022-03-04 | 北京载诚科技有限公司 | Transparent electrode assembly, device and transparent electrode assembly preparation method |
-
2018
- 2018-03-30 CN CN201810277413.2A patent/CN108536339A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109358770A (en) * | 2018-10-30 | 2019-02-19 | 合肥鑫晟光电科技有限公司 | Touch panel and its manufacturing method, touch control display apparatus |
| CN109358770B (en) * | 2018-10-30 | 2021-09-14 | 合肥鑫晟光电科技有限公司 | Touch panel, manufacturing method thereof and touch display device |
| CN114138128A (en) * | 2020-09-03 | 2022-03-04 | 北京载诚科技有限公司 | Transparent electrode assembly, device and transparent electrode assembly preparation method |
| CN113791703A (en) * | 2021-08-26 | 2021-12-14 | 牧东光电科技有限公司 | Etching-free touch display screen and manufacturing method thereof |
| CN113791703B (en) * | 2021-08-26 | 2024-04-12 | 牧东光电科技有限公司 | Touch display screen without etching lines and manufacturing method thereof |
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| Date | Code | Title | Description |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180914 |
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| WD01 | Invention patent application deemed withdrawn after publication |