CN108515273A - The cutter device and cutting method of LED wafer - Google Patents
The cutter device and cutting method of LED wafer Download PDFInfo
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- CN108515273A CN108515273A CN201810271897.XA CN201810271897A CN108515273A CN 108515273 A CN108515273 A CN 108515273A CN 201810271897 A CN201810271897 A CN 201810271897A CN 108515273 A CN108515273 A CN 108515273A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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Abstract
The present invention relates to a kind of cutter devices of LED wafer, including：Laser, to emit laser beam；Beam-expanding element is set in the propagation light path of laser beam, is collimated and expanded to laser beam；Diffraction optical element is split to obtain two beamlets to the laser beam by collimating and expanding；Focus lamp is focused two beamlets to obtain two focal beam spots；Processing platform places LED wafer to be cut, and drives its movement；Control system, control laser transmitting laser beam and the motion state for controlling processing platform；Wherein, two beamlets are focused on by focus lamp inside LED wafer, and processing platform drives LED wafer movement, so that focal beam spot forms fried point in LED wafer.Using diffraction optical element so that form two row mutually staggered in wafer Cutting Road and fry point, the core particles section after cutting is in inclined-plane, increases light-emitting area, while diffraction optical element also allows for adjusting facula position, improves machining accuracy.
Description
Technical field
The present invention relates to technical field of laser processing, the cutter device more particularly to a kind of LED wafer and cutting side
Method.
Background technology
LED wafer generally use sapphire passes through chemical vapor deposition on a sapphire substrate as substrate material
Method prepares luminous zone, and LED wafer is then cut into single small core particles.In the laser cutting method of LED wafer, laser
Beam is incident from one side surface of sapphire of wafer, and certain depth forms focal beam spot, while mobile microscope carrier inside wafer
To form a series of fried point in the Cutting Road of wafer, the substrate material at fried point is cracked due to stress, to
Realize the purpose of laser cutting separation core particles.
Increasingly extensive with the application of LED, requirement of the client to LED light emission luminance steps up, the leading portion system of LED industry
Journey technique, including extension, photoetching, plated film etc. is also in continuous improvement to improve the light emission luminance of LED chip.At present using in wafer
The cutting mode that substrate interior forms laser-induced explosion point gradually replaces laser surface ablation method, to improve LED's
Light emission luminance, but with the continuous improvement of customer requirement, need to develop more excellent laser processing, to further increase
The light emission luminance of LED chip.
Invention content
Based on this, provide a kind of cutter device and cutting method of LED wafer, it is intended to by laser cutting, improve by
The light emission luminance of LED chip made of the core particles obtained after cutting.
A kind of cutter device of LED wafer, including：Laser, to emit laser beam；Beam-expanding element is set to described
In the propagation light path for the laser beam that laser is launched, and for the laser beam that the laser is launched to be collimated and expanded
Beam；Diffraction optical element, for being split to the laser beam by collimating and expanding, to obtain two beamlets；Focus lamp,
For being focused to two beamlets, to obtain two focal beam spots；Processing platform, for placing LED to be cut
Wafer, and the LED wafer is driven to move；Control system, for controlling the laser transmitting laser beam and controlling institute
State the motion state of processing platform；Wherein, two beamlets pass through the focus lamp with the shape inside the LED wafer
At two focal beam spots, the processing platform drives the LED wafer movement, so that the focal beam spot is described
Cutting track is formed in LED wafer.
The cutter device of above-mentioned LED wafer, using precisely designed diffraction optical element (DOE,
Diffraction Optical Element), the laser beam that laser is launched is split and obtains two beamlets,
It needs to customize special diffraction optical element according to processing, the transmission of angle and Energy distribution of two beamlets can be adjusted, from
And make two beamlet line focus mirrors and be formed in the focal beam spot inside LED wafer and mutually stagger, and can accurately control
The spacing for making two focal beam spots improves the cutting success rate of LED wafer, meanwhile, it is effectively prevent to produce from the position of focal beam spot
Life deviates and causes to damage to core particles；In addition, diffraction optical element can be customized according to process requirements, LED crystalline substances are expanded
The application range of the cutter device of disk.
The cutter device further includes speculum in one of the embodiments, for changing by diffraction optics member
The direction of propagation for the beamlet that part projects is so that the beamlet enters the focus lamp.
The laser is narrow spaces picosecond laser or femto-second laser in one of the embodiments,.
The wavelength of the laser beam is 1064nm in one of the embodiments,.
Two sub-light beam energies are equal in one of the embodiments, and polarization direction is identical.
A kind of cutting method of LED wafer, includes the following steps：
S1：The laser beam that laser is launched enters diffraction optical element after expanding and collimating, and first is obtained after beam splitting
Beamlet and the second beamlet；
S2：First beamlet and the second beamlet pass through focus lamp, and the first focal beam spot and the are formed in LED wafer
Two focal beam spots；
S3：Processing platform drives the LED wafer to move in X direction, successively in each side X of the LED wafer
It is respectively formed the fried point of first row into Cutting Road and secondary series fries point, the fried point of the first row is with the fried point of secondary series along Y direction
Spacing be more than zero, and along the spacing of Z-direction be more than zero；
S4：Processing platform drives the LED wafer to be moved along Y-direction, successively in each side Y of the LED wafer
It is respectively formed the fried point of third row into Cutting Road and the 4th row fry point, the fried point of third row is with the fried point of the 4th row along X-direction
Spacing be more than zero, and along the spacing of Z-direction be more than zero；
S5：The LED wafer splits to form multiple individual core particles.
The fried point of the first row and the secondary series being located in one of the embodiments, in same X-direction Cutting Road
Fried point is 10~30 μm along the spacing range of Y-direction, and the spacing range along Z-direction is 10~80 μm.
It is located at the fried point of the third row in same Y-direction Cutting Road and the described 4th in one of the embodiments, to arrange
The spacing range of fried point in X direction is 10~30 μm, and the spacing range along Z-direction is 10~80 μm.
The section of the core particles is parallelogram or trapezoidal in one of the embodiments,.
It is located at the fried point of the first row in same X-direction Cutting Road in one of the embodiments, and secondary series fries point in institute
The projection stated on LED wafer surface is no more than 20 μm at a distance from the center line of the X-direction Cutting Road；Positioned at the same side Y
The projection of the fried point of third row and the fried point of the 4th row on the LED wafer surface into Cutting Road is cut with the Y-direction
The distance of the center line in road is no more than 20 μm.
Description of the drawings
Fig. 1 is the structural schematic diagram of the cutter device of LED wafer in an embodiment；
Fig. 2 is the structural schematic diagram before LED wafer cutting in an embodiment；
Fig. 3 is the section structure diagram of LED wafer shown in Fig. 2；
Fig. 4 is the schematic diagram after cutter device shown in Fig. 1 cuts LED wafer；
Fig. 5 is the section structure diagram after LED wafer cutting in an embodiment；
Fig. 6 is the structural schematic diagram for the core particles that cutter device is cut shown in Fig. 1.
Specific implementation mode
To make the objectives, technical solutions, and advantages of the present invention more comprehensible, with reference to the accompanying drawings and embodiments, to this
Invention is described in further detail.It should be appreciated that the specific embodiments described herein are only used to explain the present invention,
Do not limit protection scope of the present invention.
Referring to Fig. 1, a kind of cutter device 100 of LED wafer includes laser 10, beam-expanding element 20, diffraction optics
Element 30, speculum 40, focus lamp 50, processing platform 60 and control system 70.Wherein, laser 10, beam-expanding element 20, diffraction
Optical element 30, speculum 40, focus lamp 50 and processing platform 60 are sequentially placed, laser 10 and processing platform 60 respectively with control
The communication of system 70 connection processed.
The cutter device 100 of above-mentioned LED wafer, using precisely designed diffraction optical element 30 (DOE,
Diffraction Optical Element), the laser beam that laser 10 is launched is split and obtains two sub-lights
Beam needs to customize special diffraction optical element 30 according to processing, can adjust the transmission of angle and energy point of two beamlets
Cloth, so that two beamlet line focus mirrors 50 and the focal beam spot that is formed in inside LED wafer 200 mutually stagger, and
The spacing that two focal beam spots can be accurately controlled improves the cutting success rate of LED wafer, meanwhile, it effectively prevent focusing light
The position of spot generates offset and causes to damage to core particles；In addition, diffraction optical element 30 can be customized according to process requirements, expand
The big application range of the cutter device 100 of the LED wafer.
The course of work of the cutter device 100 of LED wafer of the present invention is as follows：LED wafer 200 to be cut is positioned over
On processing platform 60；Control system 70 controls laser 10 and opens, and the laser beam that laser 10 is launched enters beam-expanding element 20；
Beam-expanding element 20 is collimated and is expanded to laser beam, to obtain smaller focal beam spot during following process；Diffraction light
Element 30 is learned to being split by the laser beam for collimating and expanding, obtains two beamlets；Speculum 40, for changing by spreading out
Penetrate the direction of propagation of two beamlets of the injection of optical element 30 so that two beamlets enter focus lamp 50；Focus lamp 50 is right
Two beamlets are focused to form two focal beam spots inside LED wafer 200；Control system 70 controls processing platform
60 drive LED wafer 200 to move so that focal beam spot forms cutting track in LED wafer 200.
Specifically, beam-expanding element 20 can be beam expanding lens, such as determine power beam expansion lens, adjustable beam expanding lens etc., for adjusting laser
The spot size of beam.
Laser 10 is narrow spaces picosecond laser 10 or femto-second laser 10, and the reduction of pulsewidth can effectively improve focusing
The single pulse energy of hot spot fully acts on material, to reach better cutting effect.
The wavelength of laser beam is 1064nm, and the Sapphire Substrate that LED wafer uses is to wavelength for the laser of 1064nm
Absorptivity is high, so as to shorten clipping time, improves cutting efficiency.
The energy of two beamlets by 30 beam splitting of diffraction optical element acquisition is equal and polarization direction is identical so that phase
Identical with the fried point of two row formed in same X-direction Cutting Road (or Y-direction Cutting Road) in the time, processing effect is consistent, from
And improve the separative efficiency of core particles.
A kind of cutting method of LED wafer, includes the following steps：
S1：The laser beam that laser 10 is launched enters diffraction optical element 30 after expanding and collimating, and is obtained after beam splitting
First beamlet and the second beamlet；
S2：First beamlet and the second beamlet pass through focus lamp 50, formed in LED wafer the first focal beam spot and
Second focal beam spot；
S3：Processing platform 60 drives LED wafer to move in X direction, is cut successively in each X-direction of LED wafer
It is respectively formed the fried point of first row in road and secondary series fries point, the fried point of first row is more than with the fried point of secondary series along the spacing of Y direction
Zero, and it is more than zero along the spacing of Z-direction；
S4：Processing platform 60 drives LED wafer to be moved along Y-direction, is cut successively in each Y-direction of LED wafer
It is respectively formed the fried point of third row in road and the 4th row fry point, the fried point of third row is more than with the fried point of the 4th row along the spacing of X-direction
Zero, and it is more than zero along the spacing of Z-direction；
S5：LED wafer splits to form multiple individual core particles.
The cutting method of above-mentioned LED wafer is split laser beam by diffraction optical element 30 to obtain two sons
Light beam, the inside that two beamlet line focus mirrors 50 focus on LED wafer form two focal beam spots, are driven in processing platform
When LED wafer moves, two focal beam spots are formed with the fried point of first row in each X-direction Cutting Road and secondary series fries point,
And the fried point of two row has dislocation with Z-direction in the Y direction, and the fried point of third row and the are also formed in each Y-direction Cutting Road
Four row fry point, and the fried point of two row has dislocation in X-direction and Z-direction, and compared to the cutting of single beam, the invention enables core particles
Section be in inclined-plane (please referring to Fig. 6), effectively increase the light-emitting area of core particles, improve the hair of the LED made of the core particles
Brightness.
Simultaneously as using diffraction optical element 30, the transmission of angle and energy point of two beamlets can be accurately adjusted
Cloth can effectively improve cutting accuracy, and can be to avoid focusing to accurately adjust the position of two focal beam spots in cutting
Facula position offset causes to damage to core particles, to improve cutting yield.
Specifically, referring to Fig. 2, LED wafer 200 includes Sapphire Substrate 210 and is attached in Sapphire Substrate 210
Core particles 220, kept apart by X-direction Cutting Road 230 and Y-direction Cutting Road 240 between each core particles 220.Referring to Fig. 3,
Core particles 220 include luminescent layer 221, anode 222 and cathode 223.
Referring to Fig. 4, the fried point of first row and secondary series in same X-direction Cutting Road fry spacing L of the point along Y-direction
Ranging from 10~30 μm, along ranging from 10~80 μm of the spacing H of Z-direction.First row in same X-direction Cutting Road
Fried point and the fried point of secondary series are more than 10 μm along the spacing L of Y-direction, and the spacing h along Z-direction is more than 10 μm, to ensure that sapphire serves as a contrast
The section that Cutting Road is disconnected and formed in X direction of bottom 210 has larger area, to improve the light-emitting area of core particles 220；And
The fried point of first row and the fried point of secondary series in same X-direction Cutting Road are less than 30 μm along the spacing L of Y-direction, along Z-direction
Spacing h is less than 80 μm, excessive and make Sapphire Substrate 210 not easily broken to avoid the fried point of first row and the fried point spacing of secondary series
It splits, influences the segmentation efficiency of core particles 220.
In one embodiment, it is located at the fried point of the first row in same X-direction Cutting Road and secondary series fries point between Y-direction
It it is 20 μm away from L.
The spacing range of the fried point of third row and the fried point of the 4th row in X direction in same Y-direction Cutting Road is 10~
30 μm, the spacing range along Z-direction is 10~80 μm.The fried point of third row and the 4th row in same Y-direction Cutting Road is fried
The spacing of point is more than 10 μm, and spacing in X direction is more than 10 μm, to ensure that core particles are disconnected along Y-direction Cutting Road and are formed disconnected
Face has larger area, to improve the light-emitting area of core particles；And the fried point of third row in the same Y-direction Cutting Road and
The fried point of 4th row in X direction be smaller than 30 μm, be smaller than 80 μm along Z-direction, fried point and the arranged to avoid third
The fried point spacing of four row is excessive and core particles are not readily separated.
In one embodiment, between being located at the fried point of third row in same Y-direction Cutting Road and the fried point of the 4th row in X direction
Away from being 20 μm.
Referring to Fig. 5, the section of core particles 220 is parallelogram or trapezoidal, when adjacent Cutting Road (X-direction Cutting Road 230
Or Y-direction Cutting Road 240) offset direction it is consistent when, the section parallelogram of obtained core particles 220；When adjacent cutting
When the offset direction in road is inconsistent, the section of obtained core particles 220 is trapezoidal.
The projection of the fried point of first row and the fried point of secondary series on LED wafer surface in same X-direction Cutting Road
With at a distance from the center line of X-direction Cutting Road be no more than 20 μm；The fried point of third row and the 4th in same Y-direction Cutting Road
Projection of the fried point of row on the LED wafer surface is no more than 20 μm at a distance from the center line of Y-direction Cutting Road, to avoid
Focal beam spot is irradiated in core particles and so that core particles surface is damaged.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of cutter device of LED wafer, which is characterized in that including：
Laser, to emit laser beam；
Beam-expanding element, in the propagation light path for the laser beam launched set on the laser, and for being carried out to the laser beam
It collimates and expands；
Diffraction optical element, for being split to the laser beam by collimating and expanding, to obtain two beamlets；
Focus lamp, for being focused to two beamlets, to obtain two focal beam spots；
Processing platform for placing LED wafer to be cut, and drives the LED wafer to move；
Control system emits laser beam for controlling the laser and controls the motion state of the processing platform；
Wherein, two beamlets pass through the focus lamp to form two focusing light inside the LED wafer
Spot, the processing platform drive the LED wafer movement, are cut so that the focal beam spot is formed in the LED wafer
Cut track.
2. the cutter device of LED wafer according to claim 1, which is characterized in that the cutter device further includes anti-
Mirror is penetrated, for changing the direction of propagation of the beamlet projected by the diffraction optical element, so that described in beamlet entrance
Focus lamp.
3. the cutter device of LED wafer according to claim 1, which is characterized in that the laser is narrow spaces skin
Second laser or femto-second laser.
4. the cutter device of LED wafer according to claim 1, which is characterized in that the wavelength of the laser beam is
1064nm。
5. the cutter device of LED wafer according to claim 1, which is characterized in that two sub-light beam energy phases
Deng, and polarization direction is identical.
6. a kind of cutting method of LED wafer, which is characterized in that include the following steps：
S1：The laser beam that laser is launched enters diffraction optical element after expanding and collimating, and the first sub-light is obtained after beam splitting
Beam and the second beamlet；
S2：First beamlet and the second beamlet pass through focus lamp, form the first focal beam spot and second in LED wafer and gather
Burnt hot spot；
S3：Processing platform drives the LED wafer to move in X direction, is cut successively in each X-direction of the LED wafer
It is respectively formed the fried point of first row in cutting and secondary series fries point, the fried point of the first row and the fried point of secondary series are between Y direction
It is more than zero away from more than zero, and along the spacing of Z-direction；
S4：Processing platform drives the LED wafer to be moved along Y-direction, is cut successively in each Y-direction of the LED wafer
It is respectively formed the fried point of third row and the 4th row in cutting and fries point, fried of the third row and the fried point of the 4th row are between X-direction
It is more than zero away from more than zero, and along the spacing of Z-direction；
S5：The LED wafer splits to form multiple individual core particles.
7. the cutting method of LED wafer according to claim 6, which is characterized in that be located in same X-direction Cutting Road
The spacing range of the fried point of the first row and fried of the secondary series along Y-direction is 10~30 μm, and the spacing range along Z-direction is
10~80 μm.
8. the cutting method of LED wafer according to claim 6, which is characterized in that be located in same Y-direction Cutting Road
The spacing range of the fried point of third row and the fried point of the 4th row in X direction is 10~30 μm, and the spacing range along Z-direction is
10~80 μm.
9. the cutting method of LED wafer according to claim 6, which is characterized in that the section of the core particles is parallel four
Side shape is trapezoidal.
10. the cutting method of LED wafer according to claim 6, which is characterized in that be located in same X-direction Cutting Road
The projection and the X-direction Cutting Road on the LED wafer surface of the fried point of first row and the fried point of secondary series a center line
Distance be no more than 20 μm；The fried point of third row and the fried point of the 4th row in same Y-direction Cutting Road is in the LED wafer
Projection on surface is no more than 20 μm at a distance from the center line of the Y-direction Cutting Road.
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