CN108511535A - 一种太阳能电池片及其制备方法 - Google Patents
一种太阳能电池片及其制备方法 Download PDFInfo
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- CN108511535A CN108511535A CN201810565855.7A CN201810565855A CN108511535A CN 108511535 A CN108511535 A CN 108511535A CN 201810565855 A CN201810565855 A CN 201810565855A CN 108511535 A CN108511535 A CN 108511535A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 239000010409 thin film Substances 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 16
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 3
- 229910001120 nichrome Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052789 astatine Inorganic materials 0.000 claims 1
- 229910003460 diamond Inorganic materials 0.000 claims 1
- 239000010432 diamond Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000009738 saturating Methods 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (14)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810565855.7A CN108511535A (zh) | 2018-06-04 | 2018-06-04 | 一种太阳能电池片及其制备方法 |
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CN201810565855.7A CN108511535A (zh) | 2018-06-04 | 2018-06-04 | 一种太阳能电池片及其制备方法 |
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CN108511535A true CN108511535A (zh) | 2018-09-07 |
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CN201810565855.7A Pending CN108511535A (zh) | 2018-06-04 | 2018-06-04 | 一种太阳能电池片及其制备方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112002780A (zh) * | 2020-07-21 | 2020-11-27 | 重庆神华薄膜太阳能科技有限公司 | 薄膜太阳能电池及其制造方法 |
CN112635585A (zh) * | 2020-12-25 | 2021-04-09 | 中建材蚌埠玻璃工业设计研究院有限公司 | 一种彩色cigs薄膜太阳能电池及其制备方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101752028A (zh) * | 2008-12-18 | 2010-06-23 | 上海摩根碳制品有限公司 | 透明导电膜及其制备方法 |
CN101908582A (zh) * | 2010-06-29 | 2010-12-08 | 通用光伏能源(烟台)有限公司 | 一种透光型薄膜太阳能电池组件的制作方法 |
CN103022060A (zh) * | 2011-09-23 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | 结合氢化硅与氦化硅制作三结基材型硅薄膜太阳能电池 |
CN103151394A (zh) * | 2012-12-14 | 2013-06-12 | 广东志成冠军集团有限公司 | 薄膜太阳能电池及其制作方法 |
CN103178148A (zh) * | 2013-04-21 | 2013-06-26 | 常州合特光电有限公司 | 一种薄膜/异质结叠层太阳电池及其制造方法 |
CN103794664A (zh) * | 2014-02-28 | 2014-05-14 | 淮阴师范学院 | 一种新品n型半绝缘GaAs欧姆接触电极材料及其制备方法 |
CN207409506U (zh) * | 2017-07-07 | 2018-05-25 | 君泰创新(北京)科技有限公司 | 一种双面发电的带本征薄层异质结电池 |
CN209183558U (zh) * | 2018-06-04 | 2019-07-30 | 北京铂阳顶荣光伏科技有限公司 | 一种太阳能电池片 |
-
2018
- 2018-06-04 CN CN201810565855.7A patent/CN108511535A/zh active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101752028A (zh) * | 2008-12-18 | 2010-06-23 | 上海摩根碳制品有限公司 | 透明导电膜及其制备方法 |
CN101908582A (zh) * | 2010-06-29 | 2010-12-08 | 通用光伏能源(烟台)有限公司 | 一种透光型薄膜太阳能电池组件的制作方法 |
CN103022060A (zh) * | 2011-09-23 | 2013-04-03 | 吉富新能源科技(上海)有限公司 | 结合氢化硅与氦化硅制作三结基材型硅薄膜太阳能电池 |
CN103151394A (zh) * | 2012-12-14 | 2013-06-12 | 广东志成冠军集团有限公司 | 薄膜太阳能电池及其制作方法 |
CN103178148A (zh) * | 2013-04-21 | 2013-06-26 | 常州合特光电有限公司 | 一种薄膜/异质结叠层太阳电池及其制造方法 |
CN103794664A (zh) * | 2014-02-28 | 2014-05-14 | 淮阴师范学院 | 一种新品n型半绝缘GaAs欧姆接触电极材料及其制备方法 |
CN207409506U (zh) * | 2017-07-07 | 2018-05-25 | 君泰创新(北京)科技有限公司 | 一种双面发电的带本征薄层异质结电池 |
CN209183558U (zh) * | 2018-06-04 | 2019-07-30 | 北京铂阳顶荣光伏科技有限公司 | 一种太阳能电池片 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112002780A (zh) * | 2020-07-21 | 2020-11-27 | 重庆神华薄膜太阳能科技有限公司 | 薄膜太阳能电池及其制造方法 |
CN112635585A (zh) * | 2020-12-25 | 2021-04-09 | 中建材蚌埠玻璃工业设计研究院有限公司 | 一种彩色cigs薄膜太阳能电池及其制备方法 |
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Address after: 100076 6015, 6th floor, building 8, 9 Yingshun Road, Yinghai Town, Daxing District, Beijing Applicant after: Beijing Dingrong Photovoltaic Technology Co.,Ltd. Address before: Room 3001, building 6, No.7, Rongchang East Street, Daxing Economic and Technological Development Zone, Beijing 100176 Applicant before: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY Co.,Ltd. |
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Application publication date: 20180907 |