CN108511499B - Display panel and display device - Google Patents
Display panel and display device Download PDFInfo
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- CN108511499B CN108511499B CN201810392595.8A CN201810392595A CN108511499B CN 108511499 B CN108511499 B CN 108511499B CN 201810392595 A CN201810392595 A CN 201810392595A CN 108511499 B CN108511499 B CN 108511499B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- H10K59/65—OLEDs integrated with inorganic image sensors
Abstract
The invention provides a display panel and a display device. The display panel comprises a display area, the display panel comprises a substrate base plate, a driving circuit layer and a display device layer which are arranged in a laminated mode, and the driving circuit layer is located between the substrate base plate and the display device layer; the display panel further comprises a plurality of pixel units, and the pixel units are positioned in the display area; the display panel further comprises a semiconductor photosensitive active layer, and the orthographic projection of the semiconductor photosensitive active layer on the plane of the display panel is positioned between the orthographic projections of the two adjacent pixel units on the plane of the display panel; the semiconductor photosensitive active layer comprises a first signal input end, a second signal input end, a first signal output end and a second signal output end, and the display panel realizes fingerprint identification according to the current-voltage characteristic of the semiconductor photosensitive active layer. The invention provides a display panel and a display device, which aim to improve the screen occupation ratio.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display panel and a display device.
Background
Fingerprints are unique to each individual. With the development of science and technology, a variety of display devices with fingerprint identification functions and electronic equipment comprising the display devices, such as mobile phones, tablet computers, intelligent wearable equipment and the like, appear in the market. Like this, the user just needs to touch display device's fingerprint identification module with the finger before the display device that the operation has the fingerprint identification function, just can carry out the authority and verify, has simplified the authority verification process.
Among the present display device who has the fingerprint identification function, the fingerprint identification module often sets up in display panel's non-display area, sets up the fingerprint identification module in display panel's non-display area, has reduced the screen and has accounted for the ratio, and the development trend that turns on a border with the display panel is contrary mutually.
Disclosure of Invention
The invention provides a display panel and a display device, which aim to improve the screen occupation ratio.
In a first aspect, an embodiment of the present invention provides a display panel, including a display area, where the display panel includes a substrate, a driving circuit layer, and a display device layer, which are stacked, and the driving circuit layer is located between the substrate and the display device layer;
the display panel also comprises a plurality of pixel units, and the pixel units are positioned in the display area;
the display panel also comprises a semiconductor photosensitive active layer, and the orthographic projection of the semiconductor photosensitive active layer on the plane of the display panel is positioned between the orthographic projections of the two adjacent pixel units on the plane of the display panel; the semiconductor photosensitive active layer comprises a first signal input end, a second signal input end, a first signal output end and a second signal output end, and the display panel realizes fingerprint identification according to the current-voltage characteristics of the semiconductor photosensitive active layer.
In a second aspect, an embodiment of the present invention provides a display device, including the display panel of the first aspect.
The display panel provided by the embodiment of the invention comprises a plurality of pixel units and a plurality of semiconductor photosensitive active layers, wherein the pixel units are used for realizing luminous display, each semiconductor photosensitive active layer comprises a first signal input end, a second signal input end, a first signal output end and a second signal output end, and under the condition that the current value passing through the semiconductor photosensitive active layer is basically unchanged, and the resistance value of the semiconductor photosensitive active layer is changed, the voltage difference between the first signal output end and the second signal output end is changed, so that fingerprint identification can be realized according to the voltage values of the first signal output end and the second signal output end and the current values (current-voltage characteristics of the semiconductor photosensitive active layer) of the first signal input end and the second signal input end. Because the pixel units are positioned in the display area, and the orthographic projection of the semiconductor photosensitive active layer on the display panel is positioned between the orthographic projection of two adjacent pixel units on the display panel, the semiconductor photosensitive active layer is also positioned in the display area, the space of a non-display area is not occupied, and the screen occupation ratio is improved.
Drawings
Fig. 1 is a schematic top view of a display panel according to an embodiment of the present invention;
FIG. 2 is a schematic view of a cross-sectional view along the direction AA' in FIG. 1;
FIG. 3 is a schematic structural diagram of a semiconductor photosensitive active layer according to an embodiment of the present invention;
FIG. 4 is a schematic view of another cross-sectional structure along the direction AA' in FIG. 1;
FIG. 5 is a schematic view of another cross-sectional structure along the direction AA' in FIG. 1;
FIG. 6 is a schematic diagram of the connections of N semiconductor photosensitive active layers for a combined operation according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of the connection of N semiconductor photosensitive active layers in another combined operation according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of the connection of N semiconductor photoactive layers in another combined operation according to an embodiment of the present invention;
FIG. 9 is a schematic circuit diagram of a semiconductor photosensitive active layer according to an embodiment of the present invention;
FIG. 10 is a schematic circuit diagram of another semiconductor photosensitive active layer according to an embodiment of the present invention;
fig. 11 is a schematic top view illustrating another display panel according to an embodiment of the present invention;
FIG. 12 is a schematic view of another cross-sectional structure taken along the direction AA' in FIG. 1;
fig. 13 is a schematic structural diagram of a display device according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a schematic top view of a display panel according to an embodiment of the present invention, fig. 2 is a schematic cross-sectional view along the AA' direction in fig. 1, and fig. 3 is a schematic structural view of a semiconductor photosensitive active layer according to an embodiment of the present invention, referring to fig. 1, fig. 2 and fig. 3, the display panel includes a display region 110 (an area within a dashed-line frame), the display panel includes a substrate 10, a driving circuit layer 20 and a display device layer 30, and the driving circuit layer 20 is disposed between the substrate 10 and the display device layer 30. The display panel further includes a plurality of pixel units 40, the pixel units 40 are located in the display area 110, and the plurality of pixel units 40 may be arranged in an array in the display area 110. The display panel further comprises a semiconductor photosensitive layer 50, and the orthographic projection of the semiconductor photosensitive layer 50 on the plane of the display panel is positioned between the orthographic projections of the two adjacent pixel units 40 on the plane of the display panel. Alternatively, the area where the pixel units 40 are located is a light emitting area of the display panel, the area between the pixel units 40 is a non-light emitting area, and the semiconductor photoactive layer 50 is located in the non-light emitting area between the pixel units 40, so that normal light emitting display of the display panel is not affected.
Alternatively, in the first direction, any one of the semiconductor photoactive layers 50 is located between two adjacent pixel units 40, and in the second direction, any one of the semiconductor photoactive layers 50 is located between two adjacent pixel units 40. In other embodiments, only the semiconductor photoactive layer 50 may be provided between two adjacent pixel cells 40 aligned in the first direction, or only the semiconductor photoactive layer 50 may be provided between two adjacent pixel cells 40 aligned in the second direction. In addition, in addition to providing one semiconductor light sensing active layer 50 between every two adjacent pixel units 40 (i.e., providing one semiconductor light sensing active layer 50 every other pixel unit 40), one semiconductor light sensing active layer 50 may be provided every other plurality of pixel units 40.
Referring to fig. 2, light emitted from the display device layer 30 is irradiated onto the touch main body Z (finger) and reflected by the touch main body Z (finger) onto the semiconductor light sensing active layer 50, and since the light reflected by the touch main body Z (finger) carries fingerprint information, fingerprint recognition can be achieved by the light reflected by the touch main body Z and received by the semiconductor light sensing active layer 50.
The semiconductor photosensitive active layer 50 comprises a first signal input end 51, a second signal input end 52, a first signal output end 53 and a second signal output end 54, and the display panel realizes fingerprint identification according to the current-voltage characteristics of the semiconductor photosensitive active layer 50. Alternatively, the first and second signal input terminals 51 and 52 may input/output current signals, and the first and second signal output terminals 53 and 54 may input/output voltage signals. The semiconductor photosensitive active layer 50 may have different resistance values at different light intensities, and generally, the greater the light intensity, the greater the number of photogenerated carriers, and the smaller the resistance value of the semiconductor photosensitive active layer 50. When the current value in the semiconductor photosensitive active layer 50 is not changed and the resistance value of the semiconductor photosensitive active layer 50 is changed, the voltage difference between the first signal output terminal 53 and the second signal output terminal 54 is changed, so that fingerprint recognition can be realized according to the voltage values of the first signal output terminal 53 and the second signal output terminal 54 and the current values of the first signal input terminal 51 and the second signal input terminal 52 (the current-voltage characteristics of the semiconductor photosensitive active layer 50).
The display panel provided by the embodiment of the invention comprises a plurality of pixel units and a plurality of semiconductor photosensitive active layers, wherein the pixel units are used for realizing luminous display, each semiconductor photosensitive active layer comprises a first signal input end, a second signal input end, a first signal output end and a second signal output end, when the resistance value of each semiconductor photosensitive active layer is changed, the voltage difference between the first signal output end and the second signal output end is changed, so that fingerprint identification can be realized according to the voltage values of the first signal output end and the second signal output end and the current values (current-voltage characteristics of the semiconductor photosensitive active layers) of the first signal input end and the second signal input end, the pixel units are positioned in a display area, the orthographic projections of the semiconductor photosensitive active layers on the display panel are positioned between the orthographic projections of two adjacent pixel units on the display panel, and the semiconductor photosensitive active layers are also positioned in the display area, the space of the non-display area can not be occupied, and the screen occupation ratio is improved. In the prior art, fingerprint identification is generally implemented by using a fingerprint identification unit, where the fingerprint identification unit includes a PIN junction, a storage capacitor, and a thin film transistor, and the fingerprint identification is implemented by first charging the storage capacitor, then discharging the storage capacitor through photo-generated carriers generated by the PIN junction, and then checking the amount of residual charge in the storage capacitor. Therefore, the semiconductor photosensitive active layer in the embodiment of the invention adopts a mode different from that of a fingerprint identification unit in the prior art to realize fingerprint identification, and only one semiconductor photosensitive active layer is adopted to realize the fingerprint identification function which can be realized by three components of a PIN junction, a storage capacitor and a thin film transistor in the prior art, so that the structure of the fingerprint identification unit is simplified.
Alternatively, referring to fig. 1, 2 and 3, the material of the semiconductor photoactive layer 50 includes at least one of polycrystalline silicon, single crystalline silicon, P-type silicon, N-type silicon and germanium. The semiconductor photoactive layer 50 may be made of a material of polycrystalline silicon, single crystal silicon, P-type silicon, N-type silicon, or germanium, and the semiconductor photoactive layer 50 may be formed by mixing a plurality of materials of polycrystalline silicon, single crystal silicon, P-type silicon, N-type silicon, and germanium. The semiconductor photoactive layer 50 may be composed of an intrinsic semiconductor or a doped semiconductor.
Alternatively, referring to fig. 2, the display device layer 30 may be an organic light emitting device layer 30a, and the display panel may be an organic light emitting display panel. The organic light emitting device layer 30a may include a plurality of organic light emitting devices (one organic light emitting device is exemplarily shown in fig. 2), and the organic light emitting device may include a first electrode 32, a second electrode 33, and an organic light emitting layer 31 between the first electrode 32 and the second electrode 33, the first electrode 32 being an anode/cathode, and the second electrode 33 being a cathode/anode. The display device layer 30 may further include an auxiliary light emitting layer including at least one of a hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer, and an electron injection layer. Under the action of an applied electric field, electrons and holes are injected into the organic light emitting device from the cathode and the anode, respectively, so that the electrons and the holes migrate, recombine and decay in the organic light emitting device to emit light. In other embodiments, the display panel may also be other types of display panels, such as a liquid crystal display panel or an electrophoretic display panel.
Optionally, as shown in fig. 4, fig. 4 is another schematic cross-sectional structure view along the AA' direction in fig. 1, the display panel may further include a light shielding layer 80, the light shielding layer 80 may be located between the substrate 10 and the semiconductor photosensitive active layer 50, and the projection of the semiconductor photosensitive active layer 50 on the plane of the display panel is located in the projection of the light shielding layer 80 on the plane of the display panel, so that the light shielding layer may prevent ambient light from being incident on the semiconductor photosensitive active layer of the display panel from the side of the display panel away from the display surface (the surface of the display panel for displaying a picture), that is, ambient light is prevented from being incident on the semiconductor photosensitive active layer from the side of the substrate away from the semiconductor photosensitive active layer, thereby avoiding interference with fingerprint identification and improving accuracy of fingerprint identification. Alternatively, the light shielding layer may include a plurality of light shielding units, each of which is disposed corresponding to one of the semiconductor photosensitive active layers, as shown in fig. 4. Optionally, the light shielding layer may be a whole surface structure, so as to completely avoid the influence of light on the semiconductor photosensitive active layer from the side of the substrate far away from the semiconductor photosensitive active layer.
Alternatively, referring to fig. 2, the driving circuit layer 20 includes a plurality of thin film transistors 21 (one thin film transistor 21 is exemplarily shown in fig. 2), the thin film transistors may be used to form a pixel circuit or a peripheral driving circuit, any thin film transistor 21 includes a gate electrode 213, a source drain electrode (the source drain electrode includes a source electrode 211 and a drain electrode 212, and the source electrode 211 and the drain electrode 212 may be used interchangeably), and a semiconductor layer 214, and the semiconductor photoactive layer 50 and the semiconductor layer 214 are made of the same material and are disposed in the same layer. Therefore, the semiconductor photoactive layer 50 and the semiconductor layer 214 can be formed in the same process by using the same material, so that the semiconductor photoactive layer 50 is formed without increasing the original process flow. The gate electrode 213 is located between the source and drain electrodes and the semiconductor layer 214, and the thin film transistor 21 is a top gate thin film transistor. In other embodiments, the thin film transistor 21 may also be a thin film transistor with a bottom gate structure.
Alternatively, referring to fig. 3, the semiconductor photoactive layer 50 is rectangular, the long side of the rectangle is parallel to the third direction, the first signal input terminal 51, the second signal input terminal 52, the first signal output terminal 53 and the second signal output terminal 54 are arranged along the third direction, and the first signal output terminal 53 and the second signal output terminal 54 are located between the first signal input terminal 51 and the second signal input terminal 52. The first signal input terminal 51 and the second signal input terminal 52 may be connected to a constant current source, and form a closed loop with an external constant current source, and the external constant current source provides a constant working current to the semiconductor photoactive layer 50 through the first signal input terminal 51 and the second signal input terminal 52. Since the first signal output end 53 and the second signal output end 54 are two voltage sampling ports, and the position variation of the first signal output end 53 and the second signal output end 54 on the semiconductor light sensing active layer 50 can cause the variation of the voltage collected at the two voltage sampling ports, in order to make the positions of the first signal output end 53 and the second signal output end 54 of the plurality of semiconductor light sensing active layers 50 on the semiconductor light sensing active layer 50 relatively consistent, a simple and easy way can be taken as the embodiment of the present invention, that is, the first signal input end 51, the second signal input end 52, the first signal output end 53 and the second signal output end 54 are arranged along the third direction. It is understood that, under the same illumination intensity, the closer the distance between the first signal output terminal 53 and the second signal output terminal 54 is to the distance between the first signal input terminal 51 and the second signal input terminal 52, the greater the voltage difference between the first signal output terminal 53 and the second signal output terminal 54 is, which is more beneficial to improve the accuracy of fingerprint identification. The shape of the semiconductor photoactive layer 50 is not particularly limited in the present invention, and the shape of the semiconductor photoactive layer 50 may also be a shape matching the shape of the space between two adjacent pixel units 40, for example, if the shape of the space between two adjacent pixel units 40 is a triangle, the shape of the semiconductor photoactive layer 50 may be set to be a triangle accordingly.
In other embodiments, the first signal input terminal 51, the second signal input terminal 52, the first signal output terminal 53 and the second signal output terminal 54 can be arranged in other ways, for example, the first signal input terminal 51 and the second signal input terminal 52 are located between the first signal output terminal 53 and the second signal output terminal 54.
Alternatively, referring to fig. 3, the display panel includes a plurality of photo sensing device signal lines 60, a first signal input line 61, a second signal input line 62, a first signal output line 63, and a second signal output line 64, respectively. One end of the first signal input line 61 is electrically connected to the first signal input terminal 51, the other end of the first signal input line 51 is electrically connected to the first constant current source port I1, one end of the second signal input line 62 is electrically connected to the second signal input terminal 52, the other end of the second signal input line 62 is electrically connected to the second constant current source port I2, the first constant current source port I1 is a current input terminal/current output terminal, and the second constant current source port I2 is a current output terminal/current input terminal, so that the first signal input terminal 51 and the second signal input terminal 52 can provide a constant current for the semiconductor light sensing active layer 50. One end of the first signal output line 63 is electrically connected to the first signal output terminal 53, the other end of the first signal output line 63 is electrically connected to the first voltage detection terminal V1, one end of the second signal output line 64 is electrically connected to the second signal output terminal 54, and the other end of the second signal output line 64 is electrically connected to the second voltage detection terminal V2. The first signal output terminal 53 and the second signal output terminal 54 may be two voltage detection points.
Alternatively, referring to fig. 2 and 3, a plurality of photosensitive device signal lines 60 (including a first signal input line 61, a second signal input line 62, a first signal output line 63, and a second signal output line 64) are located between the substrate 10 and the semiconductor light sensing active layer 50. Alternatively, all the photo sensor signal lines 60 may be provided between the substrate board 10 and the semiconductor photo active layer 50. The finger print is composed of a plurality of valleys and ridges, and light having the same light intensity is reflected by the valleys and ridges of the finger print, respectively, and the light obtained generally has different light intensity, that is, the light reflected by the touch subject Z (finger) carries fingerprint information, and the light reflected by the touch subject Z (finger) can be incident on the semiconductor photosensitive active layer 50 from the side of the semiconductor photosensitive active layer 50 away from the substrate 10. Since the photo sensor signal line 60 is usually made of a light-impermeable metal material as a signal line for transmitting a voltage or current signal, the photo sensor signal line 60 is disposed between the substrate 10 and the semiconductor photo sensing active layer 50, so that the situation that the photo sensor signal line 60 shields the fingerprint signal light (light reflected by the touch body Z) is avoided, and the fingerprint signal light with sufficient light intensity reaches the semiconductor photo sensing active layer 50, thereby ensuring the accuracy of fingerprint identification.
Fig. 5 is a schematic view of another cross-sectional structure along the direction AA' in fig. 1, and referring to fig. 1 and fig. 5, the driving circuit layer 20 includes a plurality of thin film transistors 21 (one thin film transistor 21 is exemplarily shown in fig. 5), and each thin film transistor 21 includes a gate electrode 213, a source drain electrode (the source drain electrode includes a source electrode 211 and a drain electrode 212), and a semiconductor layer 214. The semiconductor layer 214 is located between the film layer where the gate 213 is located and the film layer where the source and drain are located, the thin film transistor 21 is a thin film transistor with a bottom gate structure, and the plurality of photosensitive device signal lines 60 and the gate 213 are arranged on the same layer. Further, the plurality of photo sensor signal lines 60 and the gate 213 may be formed of the same material and disposed in the same layer, and the photo sensor signal lines 60 and the gate 213 may be formed of the same material in the same process, so that the photo sensor signal lines 60 are formed without increasing the original process flow.
The semiconductor light sensing active layer can work independently, and can also work with other semiconductor light sensing active layers in a coordinated manner, wherein, every semiconductor light sensing active layer of independent work can provide a detected signal, a plurality of semiconductor light sensing active layers of coordinated work can provide a detected signal jointly, a plurality of semiconductor light sensing active layers of coordinated work have bigger photic area for single semiconductor light sensing active layer of independent work, consequently, be favorable to strengthening fingerprint detected signal, thereby can improve fingerprint identification's accuracy. Alternatively, referring to fig. 1, the display region 110 includes a plurality of combined working regions 111, and every N semiconductor photoactive layers 50 (two semiconductor photoactive layers 50 are exemplarily shown in one combined working region 111 in fig. 1) are combined to operate and located in one combined working region 111.
Alternatively, referring to FIG. 1, the area of one combined working area 111 ranges from 900 μm2-90000μm2. Illustratively, one combined working area 111 may be a square with a side length in the range of 30 μm to 300 μm. When the area of a combined working area 111 is less than 900 μm2The light receiving area is small, and the receiving isThe intensity of the fingerprint signal light is relatively small; when the area of one combined working area 111 is larger than 90000 mu m2In this case, the area of the combined work area 111 is large, which results in a decrease in the number of combined work areas 111 per inch and a decrease in the resolution of fingerprint recognition. Some alternative connection ways of the N semiconductor photoactive layers 50 in one combined working area 111 are given below, but not limited to this.
Fig. 6 is a schematic diagram of connection of N semiconductor photosensitive active layers for combined operation according to an embodiment of the present invention, and referring to fig. 1 and 6, for N semiconductor photosensitive active layers 50 for combined operation, a first signal input terminal 51 of a 1 st semiconductor photosensitive active layer 50 is electrically connected to a first signal input line 61, a second signal input terminal 52 of an i-th semiconductor photosensitive active layer 50 is electrically connected to a first signal input terminal 51 of an i +1 th semiconductor photosensitive active layer 50, a second signal input terminal 52 of an N-th semiconductor photosensitive active layer 50 is electrically connected to a second signal input line 62, a first signal output terminal 53 of the 1 st semiconductor photosensitive active layer 50 is electrically connected to a first signal output line 63, a second signal output terminal 54 of the i-th semiconductor photosensitive active layer 50 is electrically connected to a first signal output terminal 53 of the i +1 th semiconductor photosensitive active layer 50, the second signal output end 54 of the Nth semiconductor photosensitive active layer 50 is electrically connected with a second signal output line 64, i is more than or equal to 1 and less than N, and i and N are positive integers. Assume that a voltage difference between the first signal output terminal 53 and the second signal output terminal 54 of the i-th semiconductor photoactive layer 50 is Δ ViSince the second signal output terminal 54 of one semiconductor photosensitive layer 50 and the first signal output terminal 53 of the next semiconductor photosensitive layer 50 are electrically connected, the voltage difference between the first signal output line 63 and the second signal output line 64 is: Δ V1+……+ΔVi+……ΔVNThat is, the voltage difference of the N semiconductor light sensing active layers 50 working in combination is included in the voltage difference between the first signal output line 63 and the second signal output line 64, so that the voltage difference between the first signal output line 63 and the second signal output line 64 reflects the total light intensity received by the N semiconductor light sensing active layers 50, the fingerprint detection signal is enhanced, and the accuracy of fingerprint identification is improved. In addition, for combined workThe N semiconductor light sensing active layers 50 do not need to provide N first signal input lines 61, N second signal input lines 62, N first signal output lines 63, and N second signal output lines 64, but only one first signal input line 61, one second signal input line 62, one first signal output line 63, and one second signal output line 64 are provided for the N semiconductor light sensing active layers 50 that work in combination, so that the number of the first signal input lines 61, the second signal input lines 62, the first signal output lines 63, and the second signal output lines 64 is reduced.
Based on the above embodiment, the difference from the above embodiment is that the second signal output terminal 54 of the i-th semiconductor photoactive layer 50 and the first signal output terminal 53 of the i + 1-th semiconductor photoactive layer 50 are both floating. Fig. 7 is a schematic connection diagram of N semiconductor photosensitive active layers working in combination according to another embodiment of the present invention, referring to fig. 7, a second signal output end 54 of a 1 st semiconductor photosensitive active layer 50 is suspended (when i is 1), a first signal output end 53 and a second signal output end 54 of an i th semiconductor photosensitive active layer 50 are both suspended (when 1 < i < N), a first signal output end 53 of an N th semiconductor photosensitive active layer 50 is suspended, and i and N are positive integers. As shown in fig. 3, 6 and 7, when the second signal output terminal 54 of the i-th semiconductor photosensitive layer 50 is electrically connected to the first signal output terminal 53 of the i + 1-th semiconductor photosensitive layer 50, the voltage generated in the portion of the semiconductor photosensitive layer 50 located between the second signal output terminal 54 of the i-th semiconductor photosensitive layer 50 and the second signal input terminal 52 of the i-th semiconductor photosensitive layer 50 is not included in the detection signal, and the voltage generated in the portion of the semiconductor photosensitive layer 50 located between the first signal output terminal 53 of the i + 1-th semiconductor photosensitive layer 50 and the first signal input terminal 51 of the i + 1-th semiconductor photosensitive layer 50 is not included in the detection signal. When the second signal output terminal 54 of the i-th semiconductor photosensitive active layer 50 and the first signal output terminal 53 of the i + 1-th semiconductor photosensitive active layer 50 are connected in a floating manner, the N semiconductor photosensitive active layers 50 can be used as one large semiconductor photosensitive active layer, and two voltage detection points are only arranged at two ends of the large semiconductor photosensitive active layer (the first signal output terminal 53 and the second signal output terminal 54 which are suspended are not arranged, the first signal output terminal 53 is arranged only at the 1-th semiconductor photosensitive active layer 50, and the second signal output terminal 54 is arranged at the N-th semiconductor photosensitive active layer 50), so that the voltage generated between the second signal output terminal 54 of the i-th semiconductor photosensitive active layer 50 and the second signal input terminal 52 of the i-th semiconductor photosensitive active layer 50 can be counted in the detection signals, and the first signal output terminal 53 of the i + 1-th semiconductor photosensitive active layer 50 and the i + 1-th semiconductor photosensitive active layer 50 can be counted in the detection signals The voltage generated between the first signal input terminals 51 of the first signal input terminal 50 can be added to the detection signal, thereby increasing the value of the voltage difference, further enhancing the fingerprint detection signal and improving the accuracy of fingerprint identification.
Fig. 8 is a schematic diagram of connection of N semiconductor photosensitive active layers in another combined operation according to an embodiment of the present invention, and referring to fig. 1 and 8, for N semiconductor photosensitive active layers 50 in combined operation, a first signal input terminal 51 of each semiconductor photosensitive active layer 50 is electrically connected to a first signal input line 61, a second signal input terminal 52 of each semiconductor photosensitive active layer 50 is electrically connected to a second signal input line 62, a first signal output terminal 53 of a 1 st semiconductor photosensitive active layer 50 is electrically connected to a first signal output line 63, a second signal output terminal 54 of an i-th semiconductor photosensitive active layer 50 is electrically connected to a first signal output terminal 53 of an i + 1-th semiconductor photosensitive layer 50, a second signal output terminal 54 of an N-th semiconductor photosensitive active layer 50 is electrically connected to a second signal output line 64, i is greater than or equal to 1 and less than or equal to N, i and N are positive integers. The voltage difference of the N semiconductor photosensitive layers 50 operated in combination is included in the voltage difference of both the first signal output line 63 and the second signal output line 64, so that the voltage difference of both the first signal output line 63 and the second signal output line 64 reflects the total light intensity received by the N semiconductor photosensitive layers 50.
Fig. 9 is a schematic circuit connection diagram of a semiconductor photosensitive active layer according to an embodiment of the present invention, and referring to fig. 1, fig. 3 and fig. 9, the display panel further includes a plurality of photosensitive device signal lines 60, which are a first signal input line 61, a second signal input line 62, a first signal output line 63 and a second signal output line 64, respectively. The display panel further includes a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3, and a fourth thin film transistor T4, each of the first thin film transistor T1, the second thin film transistor T2, the third thin film transistor T3, and the fourth thin film transistor T4 includes a first end, a second end, and a control end, the first end may be, for example, a source/drain of the thin film transistor, the second end may be, for example, a drain/source of the thin film transistor, the control end may be, for example, a gate of the thin film transistor, and the thin film transistor may be a P-type thin film transistor or an N-type thin film transistor. The first signal input terminal 51 of the semiconductor light sensing active layer 50 is electrically connected to the first terminal of the first thin film transistor T1 and is electrically connected to the first signal input line 61 through the second terminal of the first thin film transistor T1, the second signal input terminal 52 of the semiconductor light sensing active layer 50 is electrically connected to the first terminal of the second thin film transistor T2 and is electrically connected to the second signal input line 62 through the second terminal of the second thin film transistor T2, the first signal output terminal 53 of the semiconductor light sensing active layer 50 is electrically connected to the first terminal of the third thin film transistor T3 and is electrically connected to the first signal output line 63 through the second terminal of the third thin film transistor T3, and the second signal output terminal 54 of the semiconductor light sensing active layer 50 is electrically connected to the first terminal of the fourth thin film transistor T4 and is electrically connected to the second signal output line 64 through the second terminal of the fourth thin film transistor T4. The display panel comprises a plurality of semiconductor photosensitive active layers 50, the plurality of semiconductor photosensitive active layers 50 are arranged in an array along a first direction and a second direction, the first direction and the second direction are both parallel to the plane where the display panel is located, and the first direction is crossed with the second direction. The control terminals of the first thin film transistor T1, the second thin film transistor T2, the third thin film transistor T3, and the fourth thin film transistor T4 corresponding to the semiconductor photoactive layer 50 arranged in the same row in the first direction are all electrically connected to the same gate signal line G. For the semiconductor light sensing active layers 50 arranged in the same row along the second direction, the first thin film transistor T1 corresponding to the semiconductor light sensing active layer 50 is electrically connected to the same first signal input line 61, the second thin film transistor T2 corresponding to the semiconductor light sensing active layer 50 is electrically connected to the same second signal input line 62, the third thin film transistor T3 corresponding to the semiconductor light sensing active layer 50 is electrically connected to the same first signal output line 63, and the fourth thin film transistor T4 corresponding to the semiconductor light sensing active layer 50 is electrically connected to the same second signal output line 64. It should be noted that, for space limitation, fig. 9 exemplarily shows four semiconductor photosensitive active layers arranged in an array, and a practical display panel product may include a plurality of semiconductor photosensitive active layers.
Illustratively, in fig. 9, the control terminals of the first thin film transistor T1, the second thin film transistor T2, the third thin film transistor T3 and the fourth thin film transistor T4 corresponding to the two semiconductor photoactive layers 50 in the first row are all electrically connected to the first gate signal line G1, and the control terminals of the first thin film transistor T1, the second thin film transistor T2, the third thin film transistor T3 and the fourth thin film transistor T4 corresponding to the two semiconductor photoactive layers 50 in the second row are all electrically connected to the second gate signal line G2. In the case of fingerprint recognition, the two semiconductor photosensitive active layers 50 in the first row and the two semiconductor photosensitive active layers 50 in the second row may operate in a time-sharing manner. First, the first gate signal line G1 controls 8 thin film transistors (including 2 first thin film transistors T1, 2 second thin film transistors T2, 2 third thin film transistors T3, and 2 fourth thin film transistors T4) in the first row to be turned on, so that the two semiconductor photoactive layers 50 in the first row operate, and at this time, the second gate signal line G2 controls 8 thin film transistors (including 2 first thin film transistors T1, 2 second thin film transistors T2, 2 third thin film transistors T3, and 2 fourth thin film transistors T4) in the second row to be turned off; then, the second gate signal line G2 controls 8 thin film transistors (including 2 first thin film transistors T1, 2 second thin film transistors T2, 2 third thin film transistors T3, and 2 fourth thin film transistors T4) in the second row to be turned on, so that the two semiconductor light sensing active layers 50 in the second row operate, and at this time, the first gate signal line G1 controls 8 thin film transistors (including 2 first thin film transistors T1, 2 second thin film transistors T2, 2 third thin film transistors T3, and 2 fourth thin film transistors T4) in the first row to be turned off.
Fig. 10 is a schematic circuit connection diagram of another semiconductor photosensitive active layer according to an embodiment of the present invention, referring to fig. 1, fig. 3 and fig. 10, portions similar to those in fig. 9 are not repeated herein, and ends of the first signal output lines 63, which are far away from the second end of the third thin film transistor T3, are electrically connected to each other. The first signal outputs 53 of all the semiconductor photosensitive signal layers 50 are electrically connected together and have the same potential. Therefore, there is no need to provide one first voltage detecting terminal V1 for each first signal output terminal 53, there is no need to provide a plurality of first voltage detecting terminals V1, and only one first voltage detecting terminal V1 is needed.
Alternatively, referring to fig. 1, the display panel includes a plurality of semiconductor photoactive layers 50, and the plurality of semiconductor photoactive layers 50 are uniformly distributed in the display region 110. In the display area 110, the number of the semiconductor photosensitive active layers 50 in two arbitrarily selected areas with equal areas is equal, and the semiconductor photosensitive active layers 50 fill the whole display area 110. Therefore, fingerprint identification can be realized at any position in the display area 110, or simultaneous identification of multiple fingerprints can be realized, which is beneficial to improving user experience.
Fig. 11 is a schematic top view of another display panel according to an embodiment of the present invention, which is different from fig. 1 in that a semiconductor photosensitive active layer is disposed only in a partial region of a display region, and referring to fig. 11, the display region 110 includes a fingerprint identification region 70, the display panel includes a plurality of semiconductor photosensitive active layers 50, and the plurality of semiconductor photosensitive active layers 50 are only located in the fingerprint identification region 70. Therefore, fingerprint recognition can be performed within the fingerprint recognition area 70, and fingerprint recognition cannot be performed outside the fingerprint recognition area 70 within the display area 110. Providing all of the semiconductor photoactive layers 50 in the fingerprint identification region 70 (a portion of the display region 110) can reduce the number of semiconductor photoactive layers 50 used, thereby reducing the manufacturing cost of the display panel.
Fig. 12 is a schematic cross-sectional view along direction AA' in fig. 1, and referring to fig. 1 and 12, the display device layer 30 includes a liquid crystal layer 34, the liquid crystal layer 34 includes a plurality of liquid crystal molecules, and the display panel is a liquid crystal display panel. The display panel may further include a first electrode 32 and a second electrode 33, the first electrode 32 is a common electrode, the second electrode 33 is a pixel electrode, and the liquid crystal molecules may rotate under the action of an electric field generated by the common electrode and the pixel electrode, so that the pixel units 40 at different positions have different light transmittances. The display panel may further include a light shielding layer 80, the light shielding layer 80 is located between the substrate 10 and the semiconductor photosensitive active layer 50, and a vertical projection of the semiconductor photosensitive active layer 50 on the substrate 10 is located within a vertical projection of the light shielding layer 80 on the substrate 10. In general, the liquid crystal display panel further includes a backlight (not shown in fig. 12), the backlight is located on a side of the substrate 10 away from the display device layer 30, and light emitted from the backlight is shielded by the light shielding layer 80 located between the substrate 10 and the semiconductor photosensitive active layer 50 when propagating towards the side of the display device layer 30, so that the light emitted from the backlight is prevented from directly irradiating the semiconductor photosensitive active layer 50, and the semiconductor photosensitive active layer 50 only receives fingerprint signal light reflected by a touch subject, thereby ensuring accuracy of fingerprint identification.
Fig. 13 is a schematic structural diagram of a display device according to an embodiment of the present invention, and as shown in fig. 13, a display device 200 according to an embodiment of the present invention includes a display panel 100 according to any embodiment of the present invention, which may be a mobile phone shown in fig. 13, or a computer, a television, an intelligent wearable device, and the like, and this is not particularly limited in the embodiment of the present invention. Since the display device 200 provided by the embodiment of the present invention includes the display panel 100, the display device 200 provided by the embodiment of the present invention has the beneficial effects of the display panel 100, and the screen occupation ratio is improved.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (16)
1. A display panel comprises a display area, and is characterized in that the display panel comprises a substrate base plate, a driving circuit layer and a display device layer which are arranged in a laminated mode, wherein the driving circuit layer is located between the substrate base plate and the display device layer;
the display panel further comprises a plurality of pixel units, and the pixel units are positioned in the display area;
the display panel further comprises a semiconductor photosensitive active layer, and the orthographic projection of the semiconductor photosensitive active layer on the plane of the display panel is positioned between the orthographic projections of the two adjacent pixel units on the plane of the display panel; the semiconductor photosensitive active layer comprises a first signal input end, a second signal input end, a first signal output end and a second signal output end, and the display panel realizes fingerprint identification according to the current-voltage characteristic of the semiconductor photosensitive active layer.
2. The display panel according to claim 1, wherein the driving circuit layer comprises a plurality of thin film transistors, each thin film transistor comprises a gate, a source, a drain, and a semiconductor layer, and the semiconductor photosensitive active layer and the semiconductor layer are made of the same material and are disposed in the same layer.
3. The display panel according to claim 1, wherein the display panel further comprises a plurality of photo-sensing device signal lines, which are a first signal input line, a second signal input line, a first signal output line, and a second signal output line, respectively; the first signal input line is electrically connected with the first signal input end, the second signal input line is electrically connected with the second signal input end, the first signal output line is electrically connected with the first signal output end, and the second signal output line is electrically connected with the second signal output end; the photosensitive device signal lines are positioned between the substrate base plate and the semiconductor photosensitive active layer.
4. The display panel according to claim 3, wherein the driving circuit layer comprises a plurality of thin film transistors, and any of the thin film transistors comprises a gate electrode, a source drain electrode and a semiconductor layer; the semiconductor layer is positioned between the film layer where the grid electrode is positioned and the film layer where the source and drain electrodes are positioned;
the photosensitive device signal lines and the grid electrode are arranged on the same layer.
5. The display panel according to claim 1, wherein the display panel further comprises a plurality of photo-sensing device signal lines, which are a first signal input line, a second signal input line, a first signal output line, and a second signal output line, respectively; one end of the first signal input line is electrically connected with the first signal input end, and the other end of the first signal input line is electrically connected with the first constant current source port; one end of the second signal input line is electrically connected with the second signal input end, and the other end of the second signal input line is electrically connected with the second constant current source port; one end of the first signal output line is electrically connected with the first signal output end, and the other end of the first signal output line is electrically connected with the first voltage detection end; one end of the second signal output line is electrically connected with the second signal output end, and the other end of the second signal output line is electrically connected with the second voltage detection end.
6. The display panel according to claim 1, wherein the display panel further comprises a plurality of photo-sensing device signal lines, which are a first signal input line, a second signal input line, a first signal output line, and a second signal output line, respectively;
the display panel further comprises a first thin film transistor, a second thin film transistor, a third thin film transistor and a fourth thin film transistor, wherein the first thin film transistor, the second thin film transistor, the third thin film transistor and the fourth thin film transistor respectively comprise a first end, a second end and a control end;
the first signal input end of the semiconductor photosensitive active layer is electrically connected with the first end of the first thin film transistor, and is electrically connected to the first signal input line via a second terminal of the first thin film transistor, the second signal input terminal of the semiconductor photosensitive active layer is electrically connected to a first terminal of the second thin film transistor, and is electrically connected to the second signal input line via a second terminal of the second thin film transistor, the first signal output terminal of the semiconductor photosensitive active layer is electrically connected to a first terminal of the third thin film transistor, the second signal output end of the semiconductor photosensitive active layer is electrically connected with the first end of the fourth thin film transistor and is electrically connected with the second signal output line through the second end of the fourth thin film transistor;
the display panel comprises a plurality of semiconductor photosensitive active layers, the semiconductor photosensitive active layers are arrayed along a first direction and a second direction, the first direction and the second direction are both parallel to the plane of the display panel, and the first direction and the second direction are crossed;
the control ends of the first thin film transistor, the second thin film transistor, the third thin film transistor and the fourth thin film transistor which are arranged in the same row along the first direction and correspond to the semiconductor photoactive active layer are electrically connected with the same gating signal line;
for the semiconductor photosensitive active layers arranged in the same column along the second direction, the first thin film transistor corresponding to the semiconductor photosensitive active layer is electrically connected with the same first signal input line, the second thin film transistor corresponding to the semiconductor photosensitive active layer is electrically connected with the same second signal input line, the third thin film transistor corresponding to the semiconductor photosensitive active layer is electrically connected with the same first signal output line, and the fourth thin film transistor corresponding to the semiconductor photosensitive active layer is electrically connected with the same second signal output line.
7. The display panel according to claim 6, wherein one ends of the first signal output lines, which are away from the second end of the third thin film transistor, are electrically connected to each other.
8. The display panel according to claim 1, wherein the display panel further comprises a plurality of photo-sensing device signal lines, which are a first signal input line, a second signal input line, a first signal output line, and a second signal output line, respectively; the display region includes a plurality of combined operating regions, every N of the semiconductor photosensitive active layers being operated in combination and located within one of the combined operating regions;
for the N semiconductor photosensitive active layers working in combination, the first signal input end of the 1 st semiconductor photosensitive active layer is electrically connected with the first signal input line, the second signal input end of the ith semiconductor photosensitive active layer is electrically connected with the first signal input end of the i +1 th semiconductor photosensitive active layer, the second signal input end of the nth semiconductor photosensitive active layer is electrically connected with the second signal input line, the first signal output end of the 1 st semiconductor photosensitive active layer is electrically connected with the first signal output line, the second signal output end of the ith semiconductor photosensitive active layer and the first signal output end of the i +1 th semiconductor photosensitive active layer are both in floating connection, and the second signal output end of the nth semiconductor photosensitive active layer is electrically connected with the second signal output line, i is more than or equal to 1 and less than N, and i and N are positive integers; alternatively, the first and second electrodes may be,
to the N of combined work semiconductor light sensing activity layer, every semiconductor light sensing activity layer first signal input part with one first signal input line electricity is connected, every semiconductor light sensing activity layer second signal input part with one second signal input line electricity is connected, 1 is semiconductor light sensing activity layer first signal output part with first signal output line electricity is connected, and is the ith semiconductor sensitization active layer second signal output part and i +1 semiconductor sensitization active layer first signal output part electricity is connected, and is the Nth semiconductor sensitization active layer second signal output part with second signal output line electricity is connected, and 1 is not less than i < N, i and N are positive integer.
9. The display panel of claim 8, wherein the area of one of the combined active regions is in a range of 900 μm2-90000μm2。
10. The display panel according to claim 1, wherein the display panel comprises a plurality of the semiconductor photoactive layers, and the plurality of semiconductor photoactive layers are uniformly distributed in the display region.
11. The display panel of claim 1, wherein the display area comprises a fingerprint identification area; the display panel comprises a plurality of semiconductor photosensitive active layers, and the plurality of semiconductor photosensitive active layers are only located in the fingerprint identification area.
12. The display panel according to claim 1, wherein a material of the semiconductor photoactive layer comprises at least one of polycrystalline silicon, single crystalline silicon, P-type silicon, and germanium; alternatively, the first and second electrodes may be,
the material of the semiconductor photosensitive active layer comprises at least one of polycrystalline silicon, monocrystalline silicon, N-type silicon and germanium.
13. The display panel of claim 1, wherein the display device layer is an organic light emitting device layer comprising a plurality of organic light emitting devices including a first electrode, a second electrode, and an organic light emitting layer between the first electrode and the second electrode.
14. The display panel according to claim 1, wherein the display device layer includes a liquid crystal layer;
the display panel further comprises a light shielding layer, the light shielding layer is located between the substrate and the semiconductor photosensitive active layer, and the vertical projection of the semiconductor photosensitive active layer on the substrate is located in the vertical projection of the light shielding layer on the substrate.
15. The display panel according to claim 1, wherein the semiconductor photoactive layer has a rectangular shape, a long side of the rectangular shape is parallel to a third direction, the first signal input terminal, the second signal input terminal, the first signal output terminal, and the second signal output terminal are arranged in the third direction, and the first signal output terminal and the second signal output terminal are located between the first signal input terminal and the second signal input terminal.
16. A display device characterized by comprising the display panel according to any one of claims 1 to 15.
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| CN109521605B (en) * | 2018-12-24 | 2021-10-15 | 厦门天马微电子有限公司 | Backlight module and display device |
| CN109858398B (en) * | 2019-01-14 | 2023-06-06 | 京东方科技集团股份有限公司 | Display panel and preparation method thereof, display device and fingerprint identification method |
| CN110427910B (en) * | 2019-08-09 | 2022-04-05 | Oppo广东移动通信有限公司 | Electronic device and control method of electronic device |
| CN110596979B (en) * | 2019-09-27 | 2022-07-08 | 厦门天马微电子有限公司 | Array substrate and display device |
| CN110874586B (en) * | 2019-11-29 | 2023-06-30 | 厦门天马微电子有限公司 | Display panel and display device |
| CN111223910A (en) * | 2020-03-18 | 2020-06-02 | 武汉华星光电半导体显示技术有限公司 | Display substrate |
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| CN107066162A (en) * | 2017-05-27 | 2017-08-18 | 上海天马微电子有限公司 | A kind of display panel and display device |
| CN107133613A (en) * | 2017-06-06 | 2017-09-05 | 上海天马微电子有限公司 | A kind of display panel and display device |
| CN107689384A (en) * | 2016-08-05 | 2018-02-13 | 上海箩箕技术有限公司 | Display module |
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| CN107689384A (en) * | 2016-08-05 | 2018-02-13 | 上海箩箕技术有限公司 | Display module |
| CN107066162A (en) * | 2017-05-27 | 2017-08-18 | 上海天马微电子有限公司 | A kind of display panel and display device |
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