CN108505094B - Formation method for reducing leakage current of electrode foil - Google Patents
Formation method for reducing leakage current of electrode foil Download PDFInfo
- Publication number
- CN108505094B CN108505094B CN201710102991.8A CN201710102991A CN108505094B CN 108505094 B CN108505094 B CN 108505094B CN 201710102991 A CN201710102991 A CN 201710102991A CN 108505094 B CN108505094 B CN 108505094B
- Authority
- CN
- China
- Prior art keywords
- formation
- treatment
- foil
- temperature
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 327
- 239000011888 foil Substances 0.000 title claims abstract description 212
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000011282 treatment Methods 0.000 claims abstract description 168
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 27
- 230000000536 complexating effect Effects 0.000 claims abstract description 8
- 239000003153 chemical reaction reagent Substances 0.000 claims abstract description 6
- 239000000243 solution Substances 0.000 claims description 178
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 84
- 239000004327 boric acid Substances 0.000 claims description 84
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 29
- 238000007598 dipping method Methods 0.000 claims description 20
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 17
- 239000007864 aqueous solution Substances 0.000 claims description 17
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical compound [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 claims description 15
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 claims description 15
- 235000019837 monoammonium phosphate Nutrition 0.000 claims description 15
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 11
- 229960001484 edetic acid Drugs 0.000 claims description 10
- DZCAZXAJPZCSCU-UHFFFAOYSA-K sodium nitrilotriacetate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CC([O-])=O DZCAZXAJPZCSCU-UHFFFAOYSA-K 0.000 claims description 7
- 239000005725 8-Hydroxyquinoline Substances 0.000 claims description 5
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 5
- 229960003540 oxyquinoline Drugs 0.000 claims description 5
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 2
- 229960004418 trolamine Drugs 0.000 claims description 2
- 238000010129 solution processing Methods 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 17
- 239000003990 capacitor Substances 0.000 abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 abstract description 6
- 230000002035 prolonged effect Effects 0.000 abstract description 3
- 230000002378 acidificating effect Effects 0.000 abstract description 2
- -1 aluminum ions Chemical class 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 abstract description 2
- 230000028161 membrane depolarization Effects 0.000 abstract description 2
- 239000011259 mixed solution Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000010306 acid treatment Methods 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 description 1
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 1
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
- C25D11/08—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used containing inorganic acids
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/12—Anodising more than once, e.g. in different baths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Secondary Cells (AREA)
- Chemical Treatment Of Metals (AREA)
Abstract
The invention discloses a formation method for reducing leakage current of an electrode foil, which comprises the following steps: the method comprises the following steps of pretreatment, multistage formation treatment, solution treatment, high-temperature treatment and phosphoric acid depolarization treatment, wherein solution treatment is adopted after each stage of treatment of the former three-stage formation treatment in the multistage formation treatment. According to the invention, after the first three-stage formation, a specific solution (complexing reagent) is adopted for treatment, and the complexing is carried out with aluminum ions of a hydrated alumina film, so that the hydrated alumina is modified, and the excessive generation of the hydrated alumina film is inhibited; meanwhile, the current is applied under the acidic condition to promote the conversion of the hydrated alumina film to the compact porous alumina film, so that the content of the hydrated alumina is reduced from two aspects; compared with the prior forming technology, the method has the following advantages: the leakage current of the formed foil is reduced, the ripple current resistance of the electrode foil is improved, and the service life of the capacitor is prolonged.
Description
Technical Field
The invention belongs to the technical field of manufacturing of electrode foil materials for aluminum electrolytic capacitors, and particularly relates to a formation method for reducing leakage current of an electrode foil.
Technical Field
With the development of miniaturization of the whole electronic equipment, urgent needs are provided for volume reduction and specific volume improvement of the aluminum electrolytic capacitor. The anodized foil is used as a core material in aluminum electrolytic capacitors and plays a decisive role in various characteristics of the capacitors. The existing formation process of anodic formed foil generally comprises high-temperature heat treatment after water boiling and four-stage formation, phosphoric acid treatment after five-stage formation, six-stage formation, seven-stage formation after second high-temperature heat treatment, and finally dipping treatment in ammonium dihydrogen phosphate solution. After the electrode foil prepared by the formation process is used for manufacturing an aluminum electrolytic capacitor, the leakage current is large, the ripple current resistance is poor, and the service life of the capacitor is short. The surface of the formed electrode foil contains a layer of thicker hydrated alumina film, and the leakage current of the electrode foil is mainly caused by the fact that the hydrated alumina film further reacts with water to generate amorphous alumina or aluminum hydroxide and the oxide film is degraded. The conventional formation process is carried out in an aqueous solution, so that the generation of a hydrated alumina film cannot be avoided. After high-temperature treatment, only a small part of hydrated alumina is converted, or after conventional acid immersion treatment, only a part of hydrated alumina can be dissolved, and the specific volume can be seriously attenuated due to over-strong treatment. The heat treatment and the conventional acid treatment have little effect on reducing the leakage current of the electrode foil.
In some fields requiring high reliability of capacitors, such as flash lamps, energy saving lamps, ac motors, servo motors, charging piles, etc., characteristics of low leakage current and low loss are required in addition to high specific volume and long life. In order to meet the requirements, the formation process needs to be innovated, the quality of the oxide film is improved, and the leakage current of the formed foil is reduced.
Disclosure of Invention
The invention aims to provide a method for forming a medium-high voltage anode foil, which has the advantages of high specific volume, low loss, obvious reduction of leakage current and prolonged service life of a capacitor, aiming at the existing problems.
The purpose of the invention is realized by the following technical scheme: a formation method for reducing leakage current of an electrode foil, comprising: the method comprises the following steps of pretreatment, multistage formation treatment, solution treatment, high-temperature treatment and phosphoric acid depolarization treatment, wherein solution treatment is adopted after each stage of treatment of the former three-stage formation treatment in the multistage formation treatment.
Specifically, the formation method for reducing the leakage current of the electrode foil comprises the following steps:
A. the etched foil is placed in pure water at the temperature of 90-100 ℃ for treatment;
B. placing the foil treated by the pure water in the step A into a boric acid solution with the mass fraction of 8% -15%, and controlling the temperature to 70-90 ℃ for first-stage formation;
C. b, dipping the foil subjected to the first-stage formation in the step B into a solution for solution treatment;
D. c, placing the foil subjected to the solution treatment in the step C into a boric acid solution with the mass fraction of 8% -15%, and controlling the temperature to 70-90 ℃ for second-stage formation;
E. d, dipping the foil subjected to the second-stage formation in the step D into a solution for solution treatment;
F. placing the foil treated by the solution in the step E into a boric acid solution with the mass fraction of 8% -15%, and controlling the temperature to 70-90 ℃ to perform third-stage formation;
G. d, dipping the foil formed in the third stage in the step F into a solution for solution treatment;
H. placing the foil treated by the solution in the step G into a boric acid solution with the mass fraction of 8% -15%, and controlling the temperature to 70-90 ℃ for fourth-stage formation;
I. treating the foil subjected to the fourth-stage formation in the step H at a high temperature of 400-550 ℃ for 1-5 min;
J. placing the foil subjected to high-temperature treatment in the step I into a boric acid solution with the mass fraction of 8% -15%, and controlling the temperature to 70-90 ℃ to carry out fifth-level formation;
K. placing the foil formed in the fifth stage in the step J into a 1-5% phosphoric acid solution, controlling the temperature to be 40-60 ℃, and treating for 2-5 min;
l, placing the foil treated by the phosphoric acid solution in the step K into a boric acid solution with the mass fraction of 8% -15%, and controlling the temperature to 70-90 ℃ to carry out sixth-level formation;
m, treating the foil subjected to the sixth-level formation in the step L at a high temperature of 400-550 ℃ for 1-5 min;
n, placing the foil subjected to high-temperature treatment in the step M into a boric acid solution with the mass fraction of 8% -15% to perform seventh-level formation;
and O, placing the foil subjected to seventh-stage formation in the step N in an ammonium dihydrogen phosphate solution for treatment.
In some embodiments, the treatment time in pure water in the step A is 6-10 min.
In some embodiments, the formation voltage ranges of the first-stage to seventh-stage formation are 100-200V, 300-400V, 400-500V, 500-600V, and 500-600V, respectively.
In some embodiments, the formation time of the first-stage formation to the seventh-stage formation is 5-15 min.
In some embodiments, the solution-in-process solution is a complexing reagent solution; still further, the complexing agent solution is selected from one or two of the group consisting of aqueous solutions of nitrilotriacetic acid, trisodium nitrilotriacetic acid, 8-hydroxyquinoline, triethanolamine, ethylenediaminetetraacetic acid, disodium ethylenediaminetetraacetate.
In some embodiments, the aqueous solution is 5% to 20% by weight.
In some embodiments, the solution treatment time in step C, step E and step G is 5-15 min; the processing voltage is 20-100V; the treatment temperature is 40-80 ℃.
In some embodiments, the mass fraction of the ammonium dihydrogen phosphate solution in the step O is 1% to 5%; the treatment time is 2-5 min.
According to the invention, after the first three-stage formation, a specific solution (complexing reagent) is adopted for treatment, and the complexing is carried out with aluminum ions of a hydrated alumina film, so that the hydrated alumina is modified, and the excessive generation of the hydrated alumina film is inhibited; meanwhile, the current is applied under the acidic condition to promote the conversion of the hydrated alumina film to the compact porous alumina film, so that the content of the hydrated alumina is reduced from two aspects; compared with the prior forming technology, the method has the following advantages: the leakage current of the formed foil is reduced, the ripple current resistance of the electrode foil is improved, and the service life of the capacitor is prolonged.
Definition of terms
The invention is intended to cover alternatives, modifications and equivalents, which may be included within the scope of the invention as defined by the appended claims. Those skilled in the art will recognize that many methods and materials similar or equivalent to those described herein can be used in the practice of the present invention. The present invention is in no way limited to the methods and materials described herein. In the event that one or more of the incorporated documents, patents, and similar materials differ or contradict this application (including but not limited to defined terminology, application of terminology, described techniques, and the like), this application controls.
It will be further appreciated that certain features of the invention, which are, for clarity, described in the context of separate embodiments, may also be provided in combination in a single embodiment. Conversely, various features of the invention which are, for brevity, described in the context of a single embodiment, may also be provided separately or in any suitable subcombination.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. All patents and publications referred to herein are incorporated by reference in their entirety.
The term "comprising" or "comprises" is open-ended, i.e. comprising what is specified in the present invention, but not excluding other aspects.
Unless expressly stated to the contrary, the temperatures recited herein are ranges of values. For example, "85 ℃ C" means that the temperature is in the range of 85 ℃ C. + -. 5 ℃.
Detailed Description
The following are preferred embodiments of the present invention, and the present invention is not limited to the following preferred embodiments. It should be noted that various changes and modifications based on the inventive concept herein will occur to those skilled in the art and are intended to be included within the scope of the present invention. The starting materials used in the examples are all commercially available.
Example 1
A. Treating the etched foil in pure water at 90-100 ℃ for 10 min;
B. placing the foil treated by the pure water in the step A in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ to perform first-stage formation, wherein the formation voltage is 150V, and the formation time is 12 min;
C. b, dipping the foil subjected to the first-stage formation in the step B into a nitrilotriacetic acid aqueous solution with the mass fraction of 5% for treatment, wherein the treatment voltage is 50V, the treatment time is 5min, and the temperature is 40 ℃;
D. c, placing the foil subjected to the solution treatment in the step C in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and performing second-stage formation, wherein the formation voltage is 320V, and the formation time is 12 min;
E. d, immersing the foil subjected to the second-stage formation in the step D in a nitrilotriacetic acid aqueous solution with the mass fraction of 5% for treatment, wherein the treatment voltage is 50V, the treatment time is 5min, and the temperature is 40 ℃;
F. e, placing the foil subjected to the solution treatment in the step E into a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out third-stage formation, wherein the formation voltage is 470V, and the formation time is 12 min;
G. d, dipping the foil formed in the third-stage in the step F into a nitrilotriacetic acid aqueous solution with the mass fraction of 5% for treatment, wherein the treatment voltage is 50V, the treatment time is 5min, and the temperature is 40 ℃;
H. placing the foil treated by the solution in the step G in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fourth-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
I. treating the foil subjected to the fourth-stage formation in the step H at the high temperature of 550 ℃ for 2 min;
J. placing the foil subjected to high-temperature treatment in the step I in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
K. placing the foil formed in the fifth stage in the step J into a 2% phosphoric acid solution, controlling the temperature to 50 ℃, and treating for 2 min;
l, placing the foil treated by the phosphoric acid solution in the step K into a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
m, placing the foil subjected to the sixth-level formation in the step L at the high temperature of 550 ℃ for 2 min;
n, placing the foil subjected to high-temperature treatment in the step M in a boric acid solution with the mass fraction of 8% to control the temperature to 85 ℃ for seven-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
and O, placing the foil subjected to seventh-stage formation in the step N in a 2% ammonium dihydrogen phosphate solution for treatment for 2 min.
The resulting formed foil properties were tested and the results are shown in table 1.
Example 2
A. Treating the etched foil in pure water at 90-100 ℃ for 10 min;
B. placing the foil treated by the pure water in the step A in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ to perform first-stage formation, wherein the formation voltage is 150V, and the formation time is 12 min;
C. b, dipping the foil subjected to the first-stage formation in the step B into 8-hydroxyquinoline aqueous solution with the mass fraction of 8% for treatment, wherein the treatment voltage is 50V, the treatment time is 10min, and the temperature is 60 ℃;
D. c, placing the foil subjected to the solution treatment in the step C in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and performing second-stage formation, wherein the formation voltage is 320V, and the formation time is 12 min;
E. d, dipping the foil subjected to the second-stage formation in the step D into 8-hydroxyquinoline aqueous solution with the mass fraction of 8% for treatment, wherein the treatment voltage is 50V, the treatment time is 10min, and the temperature is 60 ℃;
F. e, placing the foil subjected to the solution treatment in the step E into a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out third-stage formation, wherein the formation voltage is 470V, and the formation time is 12 min;
G. d, dipping the foil formed in the third stage in the step F into 8-hydroxyquinoline aqueous solution with the mass fraction of 8% for treatment, wherein the treatment voltage is 50V, the treatment time is 10min, and the temperature is 60 ℃;
H. placing the foil treated by the solution in the step G in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fourth-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
I. treating the foil subjected to the fourth-stage formation in the step H at the high temperature of 550 ℃ for 2 min;
J. placing the foil subjected to high-temperature treatment in the step I in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
K. placing the foil formed in the fifth stage in the step J into a 2% phosphoric acid solution, controlling the temperature to 50 ℃, and treating for 2 min;
l, placing the foil treated by the phosphoric acid solution in the step K into a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
m, placing the foil subjected to the sixth-level formation in the step L at the high temperature of 550 ℃ for 2 min;
n, placing the foil subjected to high-temperature treatment in the step M in a boric acid solution with the mass fraction of 8% to control the temperature to 85 ℃ for seven-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
and O, placing the foil subjected to seventh-stage formation in the step N in a 2% ammonium dihydrogen phosphate solution for treatment for 2 min.
The resulting formed foil properties were tested and the results are shown in table 1.
Example 3
A. Treating the etched foil in pure water at 90-100 ℃ for 10 min;
B. placing the foil treated by the pure water in the step A in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ to perform first-stage formation, wherein the formation voltage is 150V, and the formation time is 12 min;
C. b, immersing the foil subjected to the first-stage formation in the step B in an ethylene diamine tetraacetic acid aqueous solution with the mass fraction of 10% for treatment, wherein the treatment voltage is 60V, the treatment time is 10min, and the temperature is 80 ℃;
D. c, placing the foil subjected to the solution treatment in the step C in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and performing second-stage formation, wherein the formation voltage is 320V, and the formation time is 12 min;
E. d, immersing the foil subjected to the second-stage formation in the step D in an ethylene diamine tetraacetic acid aqueous solution with the mass fraction of 10% for treatment, wherein the treatment voltage is 60V, the treatment time is 10min, and the temperature is 80 ℃;
F. e, placing the foil subjected to the solution treatment in the step E into a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out third-stage formation, wherein the formation voltage is 470V, and the formation time is 12 min;
G. f, immersing the foil subjected to the third-stage formation in an ethylene diamine tetraacetic acid aqueous solution with the mass fraction of 10% for treatment, wherein the treatment voltage is 60V, the treatment time is 10min, and the temperature is 80 ℃;
H. placing the foil treated by the solution in the step G in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fourth-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
I. treating the foil subjected to the fourth-stage formation in the step H at the high temperature of 550 ℃ for 2 min;
J. placing the foil subjected to high-temperature treatment in the step I in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
K. placing the foil formed in the fifth stage in the step J into a 2% phosphoric acid solution, controlling the temperature to 50 ℃, and treating for 2 min;
l, placing the foil treated by the phosphoric acid solution in the step K into a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
m, placing the foil subjected to the sixth-level formation in the step L at the high temperature of 550 ℃ for 2 min;
n, placing the foil subjected to high-temperature treatment in the step M in a boric acid solution with the mass fraction of 8% to control the temperature to 85 ℃ for seven-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
and O, placing the foil subjected to seventh-stage formation in the step N in a 2% ammonium dihydrogen phosphate solution for treatment for 2 min.
The resulting formed foil properties were tested and the results are shown in table 1.
Example 4
A. Treating the etched foil in pure water at 90-100 ℃ for 10 min;
B. placing the foil treated by the pure water in the step A in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ to perform first-stage formation, wherein the formation voltage is 150V, and the formation time is 12 min;
C. b, dipping the foil subjected to the first-stage formation in the step B into a mixed solution of 5% of nitrilotriacetic acid and 5% of trisodium nitrilotriacetic acid for treatment, wherein the treatment voltage is 60V, the treatment time is 10min, and the temperature is 80 ℃;
D. c, placing the foil subjected to the solution treatment in the step C in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and performing second-stage formation, wherein the formation voltage is 320V, and the formation time is 12 min;
E. d, dipping the foil subjected to the second-stage formation in the step D into a mixed solution of 5% of nitrilotriacetic acid and 5% of trisodium nitrilotriacetic acid for treatment, wherein the treatment voltage is 60V, the treatment time is 10min, and the temperature is 80 ℃;
F. e, placing the foil subjected to the solution treatment in the step E into a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out third-stage formation, wherein the formation voltage is 470V, and the formation time is 12 min;
G. d, dipping the foil formed in the third-stage in the step F into a mixed solution of 5% of nitrilotriacetic acid and 5% of trisodium nitrilotriacetic acid for treatment, wherein the treatment voltage is 60V, the treatment time is 10min, and the temperature is 80 ℃;
H. placing the foil treated by the solution in the step G in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fourth-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
I. treating the foil subjected to the fourth-stage formation in the step H at the high temperature of 550 ℃ for 2 min;
J. placing the foil subjected to high-temperature treatment in the step I in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
K. placing the foil formed in the fifth stage in the step J into a 2% phosphoric acid solution, controlling the temperature to 50 ℃, and treating for 2 min;
l, placing the foil treated by the phosphoric acid solution in the step K into a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
m, placing the foil subjected to the sixth-level formation in the step L at the high temperature of 550 ℃ for 2 min;
n, placing the foil subjected to high-temperature treatment in the step M in a boric acid solution with the mass fraction of 8% to control the temperature to 85 ℃ for seven-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
and O, placing the foil subjected to seventh-stage formation in the step N in a 2% ammonium dihydrogen phosphate solution for treatment for 2 min.
The resulting formed foil properties were tested and the results are shown in table 1.
Example 5
A. Treating the etched foil in pure water at 90-100 ℃ for 10 min;
B. placing the foil treated by the pure water in the step A in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ to perform first-stage formation, wherein the formation voltage is 150V, and the formation time is 12 min;
C. b, dipping the foil subjected to the first-stage formation in the step B into a triethanolamine aqueous solution with the mass fraction of 15% for treatment, wherein the treatment voltage is 80V, the treatment time is 10min, and the temperature is 40 ℃;
D. c, placing the foil subjected to the solution treatment in the step C in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and performing second-stage formation, wherein the formation voltage is 320V, and the formation time is 12 min;
E. d, dipping the foil subjected to the second-stage formation in the step D into a triethanolamine aqueous solution with the mass fraction of 15% for treatment, wherein the treatment voltage is 80V, the treatment time is 10min, and the temperature is 40 ℃;
F. e, placing the foil subjected to the solution treatment in the step E into a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out third-stage formation, wherein the formation voltage is 470V, and the formation time is 12 min;
G. d, immersing the foil formed in the third-stage formation in the step F in a triethanolamine aqueous solution with the mass fraction of 15% for treatment, wherein the treatment voltage is 80V, the treatment time is 10min, and the temperature is 40 ℃;
H. placing the foil treated by the solution in the step G in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fourth-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
I. treating the foil subjected to the fourth-stage formation in the step H at the high temperature of 550 ℃ for 2 min;
J. placing the foil subjected to high-temperature treatment in the step I in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
K. placing the foil formed in the fifth stage in the step J into a 2% phosphoric acid solution, controlling the temperature to 50 ℃, and treating for 2 min;
l, placing the foil treated by the phosphoric acid solution in the step K into a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
m, placing the foil subjected to the sixth-level formation in the step L at the high temperature of 550 ℃ for 2 min;
n, placing the foil subjected to high-temperature treatment in the step M in a boric acid solution with the mass fraction of 8% to control the temperature to 85 ℃ for seven-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
and O, placing the foil subjected to seventh-stage formation in the step N in a 2% ammonium dihydrogen phosphate solution for treatment for 2 min.
The resulting formed foil properties were tested and the results are shown in table 1.
Example 6
A. Treating the etched foil in pure water at 90-100 ℃ for 10 min;
B. placing the foil treated by the pure water in the step A in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ to perform first-stage formation, wherein the formation voltage is 150V, and the formation time is 12 min;
C. b, immersing the foil subjected to the first-stage formation in the step B in a mixed solution of 15% of ethylene diamine tetraacetic acid and 5% of disodium ethylene diamine tetraacetic acid for treatment, wherein the treatment voltage is 80V, the treatment time is 15min, and the temperature is 50 ℃;
D. c, placing the foil subjected to the solution treatment in the step C in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and performing second-stage formation, wherein the formation voltage is 320V, and the formation time is 12 min;
E. d, immersing the foil subjected to the second-stage formation in the step D in a mixed solution of 15% of ethylene diamine tetraacetic acid and 5% of disodium ethylene diamine tetraacetic acid for treatment, wherein the treatment voltage is 80V, the treatment time is 15min, and the temperature is 50 ℃;
F. e, placing the foil subjected to the solution treatment in the step E into a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out third-stage formation, wherein the formation voltage is 470V, and the formation time is 12 min;
G. f, immersing the foil formed in the third-stage formation in a mixed solution of 15% of ethylene diamine tetraacetic acid and 5% of disodium ethylene diamine tetraacetic acid for treatment, wherein the treatment voltage is 80V, the treatment time is 15min, and the temperature is 50 ℃;
H. placing the foil treated by the solution in the step G in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fourth-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
I. treating the foil subjected to the fourth-stage formation in the step H at the high temperature of 550 ℃ for 2 min;
J. placing the foil subjected to high-temperature treatment in the step I in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
K. placing the foil formed in the fifth stage in the step J into a 2% phosphoric acid solution, controlling the temperature to 50 ℃, and treating for 2 min;
l, placing the foil treated by the phosphoric acid solution in the step K into a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
m, placing the foil subjected to the sixth-level formation in the step L at the high temperature of 550 ℃ for 2 min;
n, placing the foil subjected to high-temperature treatment in the step M in a boric acid solution with the mass fraction of 8% to control the temperature to 85 ℃ for seven-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
and O, placing the foil subjected to seventh-stage formation in the step N in a 2% ammonium dihydrogen phosphate solution for treatment for 2 min.
The resulting formed foil properties were tested and the results are shown in table 1.
Comparative example 1
A. Treating the etched foil in pure water at 90-100 ℃ for 10 min;
B. placing the foil treated by the pure water in the step A in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ to perform first-stage formation, wherein the formation voltage is 150V, and the formation time is 12 min;
C. b, dipping the foil subjected to the first-stage formation in the step B into a nitrilotriacetic acid aqueous solution with the mass fraction of 5% for treatment, wherein the treatment voltage is 50V, the treatment time is 5min, and the temperature is 40 ℃;
D. c, placing the foil subjected to the solution treatment in the step C in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and performing second-stage formation, wherein the formation voltage is 320V, and the formation time is 12 min;
E. d, placing the foil subjected to the second-stage formation treatment in the step D in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out third-stage formation, wherein the formation voltage is 470V, and the formation time is 12 min;
F. placing the foil subjected to the third-stage formation in the step E in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fourth-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
G. c, treating the foil subjected to the fourth-stage formation in the step F at the high temperature of 550 ℃ for 2 min;
H. placing the foil subjected to high-temperature treatment in the step G in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
I. placing the foil formed in the fifth stage in the step H in a 2% phosphoric acid solution, controlling the temperature to 50 ℃, and treating for 2 min;
J. placing the foil treated by the phosphoric acid solution in the step I in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
K. placing the foil subjected to the sixth-level formation in the step J at the high temperature of 550 ℃ for 2 min;
l, placing the foil subjected to high-temperature treatment in the step K in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out seven-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
m, placing the seventh-stage formed foil in the step L in a 2% ammonium dihydrogen phosphate solution for treatment for 2 min.
The resulting formed foil properties were tested and the results are shown in table 1.
Comparative example 2
A. Treating the etched foil in pure water at 90-100 ℃ for 10 min;
B. placing the foil treated by the pure water in the step A in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ to perform first-stage formation, wherein the formation voltage is 150V, and the formation time is 12 min;
C. b, dipping the foil subjected to the first-stage formation in the step B into a mixed solution of 5% of nitrilotriacetic acid and 5% of trisodium nitrilotriacetic acid for treatment, wherein the treatment voltage is 60V, the treatment time is 10min, and the temperature is 80 ℃;
D. c, placing the foil subjected to the solution treatment in the step C in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and performing second-stage formation, wherein the formation voltage is 320V, and the formation time is 12 min;
E. d, dipping the foil subjected to the second-stage formation in the step D into a mixed solution of 5% of nitrilotriacetic acid and 5% of trisodium nitrilotriacetic acid for treatment, wherein the treatment voltage is 60V, the treatment time is 10min, and the temperature is 80 ℃;
F. e, placing the foil subjected to the solution treatment in the step E into a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out third-stage formation, wherein the formation voltage is 470V, and the formation time is 12 min;
G. placing the foil subjected to the third-stage formation treatment in the step F in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fourth-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
H. c, treating the foil subjected to the fourth-stage formation in the step G at the high temperature of 550 ℃ for 2 min;
I. placing the foil subjected to high-temperature treatment in the step H in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
J. placing the foil formed in the fifth stage in the step I in a 2% phosphoric acid solution, controlling the temperature to 50 ℃, and treating for 2 min;
K. placing the foil treated by the phosphoric acid solution in the step J into a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
l, placing the foil subjected to the sixth-level formation in the step K at the high temperature of 550 ℃ for 2 min;
m, placing the foil subjected to high-temperature treatment in the step L in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out seven-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
and N, placing the foil subjected to seventh-stage formation in the step M in a 2% ammonium dihydrogen phosphate solution for treatment for 2 min.
The resulting formed foil properties were tested and the results are shown in table 1.
Comparative example 3
A. Treating the etched foil in pure water at 90-100 ℃ for 10 min;
B. placing the foil treated by the pure water in the step A in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ to perform first-stage formation, wherein the formation voltage is 150V, and the formation time is 12 min;
C. b, immersing the foil subjected to the first-stage formation in the step B in a mixed solution of 15% of ethylene diamine tetraacetic acid and 5% of disodium ethylene diamine tetraacetic acid for treatment, wherein the treatment voltage is 80V, the treatment time is 10min, and the temperature is 40 ℃;
D. c, placing the foil subjected to the solution treatment in the step C in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and performing second-stage formation, wherein the formation voltage is 320V, and the formation time is 12 min;
E. d, placing the foil subjected to the second-stage formation treatment in the step D in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out third-stage formation, wherein the formation voltage is 470V, and the formation time is 12 min;
F. e, immersing the foil formed in the third stage in the step E in a mixed solution of 15% of ethylene diamine tetraacetic acid and 5% of disodium ethylene diamine tetraacetic acid for treatment, wherein the treatment voltage is 80V, the treatment time is 10min, and the temperature is 40 ℃;
G. placing the foil treated by the solution in the step F into a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fourth-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
H. c, treating the foil subjected to the fourth-stage formation in the step G at the high temperature of 550 ℃ for 2 min;
I. placing the foil subjected to high-temperature treatment in the step H in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
J. placing the foil formed in the fifth stage in the step I in a 2% phosphoric acid solution, controlling the temperature to 50 ℃, and treating for 2 min;
K. placing the foil treated by the phosphoric acid solution in the step J into a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
l, placing the foil subjected to the sixth-level formation in the step K at the high temperature of 550 ℃ for 2 min;
m, placing the foil subjected to high-temperature treatment in the step L in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out seven-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
and N, placing the foil subjected to seventh-stage formation in the step M in a 2% ammonium dihydrogen phosphate solution for treatment for 2 min.
The resulting formed foil properties were tested and the results are shown in table 1.
Comparative example 4
A. Treating the etched foil in pure water at 90-100 ℃ for 10 min;
B. placing the foil treated by the pure water in the step A in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ to perform first-stage formation, wherein the formation voltage is 150V, and the formation time is 12 min;
C. b, placing the foil subjected to the first-stage formation treatment in the step B into a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out second-stage formation, wherein the formation voltage is 320V, and the formation time is 12 min;
D. c, placing the foil subjected to the second-stage formation treatment in the step C in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out third-stage formation, wherein the formation voltage is 470V, and the formation time is 12 min;
E. d, placing the foil subjected to the third-stage formation treatment in the step D in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fourth-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
F. e, treating the foil subjected to the fourth-stage formation in the step E at the high temperature of 550 ℃ for 2 min;
G. placing the foil subjected to high-temperature treatment in the step F into a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
H. placing the foil formed in the fifth stage in the step G in a 2% phosphoric acid solution, controlling the temperature to 50 ℃, and treating for 2 min;
I. placing the foil treated by the phosphoric acid solution in the step H in a boric acid solution with the mass fraction of 8%, controlling the temperature to 85 ℃ and carrying out fifth-level formation, wherein the formation voltage is 580V, and the formation time is 12 min;
J. placing the foil subjected to the sixth-level formation in the step I at the high temperature of 550 ℃ for 2 min;
K. placing the foil subjected to high-temperature treatment in the step J in a boric acid solution with the mass fraction of 8% to control the temperature to 85 ℃ for seven-stage formation, wherein the formation voltage is 580V, and the formation time is 12 min;
l, placing the foil obtained in the seventh step in the step K in 2% ammonium dihydrogen phosphate solution for 2 min.
The resulting formed foil properties were tested and the results are shown in table 1.
Results of Performance testing
Table 1 results of performance testing
As can be seen from the data in the table, the performance of the foil subjected to the three solution treatments in the first three-stage formation is superior to that of the foil subjected to the one and two solution treatments. Under the 600V reaching voltage, the formed foil prepared by the embodiment of the invention has the specific volume higher than that of the formed foil prepared by a common forming process by more than 4 percent, the leakage current is reduced by more than 8 percent, and the loss and the water boiling boosting time are both superior to those of the common formed foil.
Claims (6)
1. A formation method for reducing leakage current of an electrode foil, comprising:
A. the etched foil is placed in pure water at the temperature of 90-100 ℃ for treatment;
B. placing the foil treated by the pure water in the step A into a boric acid solution with the mass fraction of 8% -15%, and controlling the temperature to 70-90 ℃ for first-stage formation;
C. b, dipping the foil subjected to the first-stage formation in the step B into a solution for solution treatment;
D. c, placing the foil subjected to the solution treatment in the step C into a boric acid solution with the mass fraction of 8% -15%, and controlling the temperature to 70-90 ℃ for second-stage formation;
E. d, dipping the foil subjected to the second-stage formation in the step D into a solution for solution treatment;
F. placing the foil treated by the solution in the step E into a boric acid solution with the mass fraction of 8% -15%, and controlling the temperature to 70-90 ℃ to perform third-stage formation;
G. d, dipping the foil formed in the third stage in the step F into a solution for solution treatment;
H. placing the foil treated by the solution in the step G into a boric acid solution with the mass fraction of 8% -15%, and controlling the temperature to 70-90 ℃ for fourth-stage formation;
I. treating the foil subjected to the fourth-stage formation in the step H at a high temperature of 400-550 ℃ for 1-5 min;
J. placing the foil subjected to high-temperature treatment in the step I into a boric acid solution with the mass fraction of 8% -15%, and controlling the temperature to 70-90 ℃ to carry out fifth-level formation;
K. placing the foil formed in the fifth stage in the step J into a 1-5% phosphoric acid solution, controlling the temperature to be 40-60 ℃, and treating for 2-5 min;
l, placing the foil treated by the phosphoric acid solution in the step K into a boric acid solution with the mass fraction of 8% -15%, and controlling the temperature to 70-90 ℃ to carry out sixth-level formation;
m, treating the foil subjected to the sixth-level formation in the step L at a high temperature of 400-550 ℃ for 1-5 min;
n, placing the foil subjected to high-temperature treatment in the step M into a boric acid solution with the mass fraction of 8% -15% to perform seventh-level formation;
o, placing the foil subjected to seventh-level formation in the step N in ammonium dihydrogen phosphate solution for treatment;
the solution in the step C, the step E and the step G is a complexing reagent solution, and the mass fraction of solute in the complexing reagent solution is 5-20%; the complexing reagent solution is selected from one or two aqueous solutions of nitrilotriacetic acid, trisodium nitrilotriacetic acid, 8-hydroxyquinoline, triethanolamine, ethylene diamine tetraacetic acid and disodium ethylene diamine tetraacetic acid; the processing voltage of the solution processing is 20-100V.
2. The method as claimed in claim 1, wherein the treatment time in pure water in step A is 6-10 min.
3. The formation method for reducing leakage current of electrode foil as claimed in claim 1, wherein the formation voltages of the first-stage formation to the seventh-stage formation are in the ranges of 100-200V, 300-400V, 400-500V, 500-600V and 500-600V, respectively.
4. The formation method for reducing the leakage current of the electrode foil as claimed in claim 1, wherein the formation time of the first-stage formation to the seventh-stage formation is 5-15 min.
5. The formation method for reducing leakage current of electrode foil according to claim 1, wherein the solution treatment time in step C, step E and step G is 5-15 min; the treatment temperature is 40-80 ℃.
6. The formation method for reducing the leakage current of the electrode foil as claimed in claim 1, wherein the mass fraction of the ammonium dihydrogen phosphate solution in the step O is 1-5%; the treatment time is 2-5 min.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710102991.8A CN108505094B (en) | 2017-02-24 | 2017-02-24 | Formation method for reducing leakage current of electrode foil |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710102991.8A CN108505094B (en) | 2017-02-24 | 2017-02-24 | Formation method for reducing leakage current of electrode foil |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108505094A CN108505094A (en) | 2018-09-07 |
CN108505094B true CN108505094B (en) | 2020-07-24 |
Family
ID=63372853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710102991.8A Active CN108505094B (en) | 2017-02-24 | 2017-02-24 | Formation method for reducing leakage current of electrode foil |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108505094B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109402700A (en) * | 2018-11-01 | 2019-03-01 | 青海瑞合铝箔有限公司 | A kind of improved Waste Acid From Hua Cheng Foil manufacturing process |
CN109609991B (en) * | 2018-12-26 | 2020-03-24 | 东莞东阳光科研发有限公司 | Formed foil, preparation method and application thereof |
CN112103084B (en) * | 2020-08-17 | 2021-10-15 | 新疆众和股份有限公司 | Anode foil and preparation method thereof |
CN113921282B (en) * | 2021-09-26 | 2023-11-17 | 内蒙古乌兰察布东阳光化成箔有限公司 | Medium-high voltage formation foil low-loss formation process for aluminum electrolytic capacitor |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6299752B1 (en) * | 1999-03-10 | 2001-10-09 | Pacesetter, Inc. | Very high volt oxide formation of aluminum for electrolytic capacitors |
CN1892936A (en) * | 2006-04-05 | 2007-01-10 | 江苏中联科技集团有限公司 | Formation method for reducing leakage current of electrode foil for aluminum electrolytic capacitor |
CN101777432A (en) * | 2010-03-23 | 2010-07-14 | 扬州宏远电子有限公司 | Forming process of anode foils for extra-high voltage aluminium electrolytic capacitors |
CN102021627A (en) * | 2010-11-10 | 2011-04-20 | 广西贺州市桂东电子科技有限责任公司 | Depolarization method in foiling process of electronic aluminum foil |
JP2013004650A (en) * | 2011-06-15 | 2013-01-07 | Panasonic Corp | Anode foil for electrolytic capacitor and aluminum electrolytic capacitor using the same or functional polymer aluminum electrolytic capacitor and manufacturing method of anode foil for electrolytic capacitor |
CN103160902A (en) * | 2012-12-13 | 2013-06-19 | 宝兴县剑锋制箔电子有限公司 | Middle-high voltage electrode foil five-section formation two-stage liquid feed production method |
CN103762081A (en) * | 2013-12-31 | 2014-04-30 | 肇庆华锋电子铝箔股份有限公司 | Manufacturing method for aluminum base ferroelectric thin film |
-
2017
- 2017-02-24 CN CN201710102991.8A patent/CN108505094B/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6299752B1 (en) * | 1999-03-10 | 2001-10-09 | Pacesetter, Inc. | Very high volt oxide formation of aluminum for electrolytic capacitors |
CN1892936A (en) * | 2006-04-05 | 2007-01-10 | 江苏中联科技集团有限公司 | Formation method for reducing leakage current of electrode foil for aluminum electrolytic capacitor |
CN101777432A (en) * | 2010-03-23 | 2010-07-14 | 扬州宏远电子有限公司 | Forming process of anode foils for extra-high voltage aluminium electrolytic capacitors |
CN102021627A (en) * | 2010-11-10 | 2011-04-20 | 广西贺州市桂东电子科技有限责任公司 | Depolarization method in foiling process of electronic aluminum foil |
JP2013004650A (en) * | 2011-06-15 | 2013-01-07 | Panasonic Corp | Anode foil for electrolytic capacitor and aluminum electrolytic capacitor using the same or functional polymer aluminum electrolytic capacitor and manufacturing method of anode foil for electrolytic capacitor |
CN103160902A (en) * | 2012-12-13 | 2013-06-19 | 宝兴县剑锋制箔电子有限公司 | Middle-high voltage electrode foil five-section formation two-stage liquid feed production method |
CN103762081A (en) * | 2013-12-31 | 2014-04-30 | 肇庆华锋电子铝箔股份有限公司 | Manufacturing method for aluminum base ferroelectric thin film |
Also Published As
Publication number | Publication date |
---|---|
CN108505094A (en) | 2018-09-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108505094B (en) | Formation method for reducing leakage current of electrode foil | |
CN110993347B (en) | High-voltage anode foil of sintered aluminum electrolytic capacitor and preparation method thereof | |
CN109609991B (en) | Formed foil, preparation method and application thereof | |
CN101826397B (en) | Five-stage manufacturing method of electrode foil for medium-high voltage aluminium electrolytic capacitor | |
CN110055571B (en) | Pretreatment solution for improving medium-high voltage formed foil capacity for aluminum electrolytic capacitor and forming process | |
CN108155016B (en) | Formation processing method for reducing leakage current of formed foil of aluminum electrolytic capacitor | |
CN112117129B (en) | Mixed acidification formation process of high-voltage high-capacity low-defect anode foil | |
WO2022247364A1 (en) | Method for preparing nano microporous structure aluminum electrode foil for automotive electronics | |
EP2660837A1 (en) | Manufacturing method for anode foil of aluminum electrolytic capacitor | |
CN104078240A (en) | Method for manufacturing anode foil of alternating current motor capacitor | |
CN109378218B (en) | Method for manufacturing high-stability low-voltage aluminum electrolytic capacitor formed foil | |
CN108335925B (en) | Method for improving leakage current performance of medium-high voltage electronic aluminum foil | |
CN109859949A (en) | A method of reducing medium-high pressure chemical foil leakage current | |
CN115172054B (en) | Medium-high voltage anodic oxidation pretreatment method, aluminum foil and aluminum electrolytic capacitor | |
CN113921282A (en) | Low-loss formation process for medium-high voltage formed foil for aluminum electrolytic capacitor | |
CN116825542A (en) | Pretreatment method for improving withstand voltage of high specific volume aluminum composite anode foil | |
CN112133563B (en) | Six-stage formation process of high-capacity low-leakage medium-voltage anode foil | |
CN112863879B (en) | Process method for processing and thinning in medium-high voltage anode aluminum foil | |
CN114875353A (en) | Preparation method of high-corrosion-resistance sintered neodymium-iron-boron magnet | |
CN111748834B (en) | Preparation method of electrode foil for aluminum electrolytic capacitor and electrode foil | |
CN112530707A (en) | Method for reducing leakage current after non-solid electrolyte tantalum capacitor is formed | |
CN103151174A (en) | Manufacturing method of electrode foil for high-voltage aluminium electrolytic capacitor | |
KR20140033607A (en) | Producting method for electrode foil for stacked type aluminium capacitor | |
CN113322454A (en) | Forming method of low-pressure formed foil and prepared low-pressure formed foil | |
KR20150045051A (en) | Producting method for electrode foil for accunulated type aluminum electrolytic capacitor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |