CN108493285A - A kind of cadmium telluride nano crystal solar cell and preparation method thereof based on environment-friendly type, the nanocrystalline buffer layer of nontoxic wide band gap semiconducter - Google Patents
A kind of cadmium telluride nano crystal solar cell and preparation method thereof based on environment-friendly type, the nanocrystalline buffer layer of nontoxic wide band gap semiconducter Download PDFInfo
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- 239000002159 nanocrystal Substances 0.000 title claims abstract description 34
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 26
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims abstract description 42
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- 238000004770 highest occupied molecular orbital Methods 0.000 description 9
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- BEAZKUGSCHFXIQ-UHFFFAOYSA-L zinc;diacetate;dihydrate Chemical compound O.O.[Zn+2].CC([O-])=O.CC([O-])=O BEAZKUGSCHFXIQ-UHFFFAOYSA-L 0.000 description 3
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- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
The invention discloses a kind of cadmium telluride nano crystal solar cell and preparation method thereof based on environment-friendly type, the nanocrystalline buffer layer of nontoxic wide band gap semiconducter, the solar cell are stacked gradually and are constituted by glass substrate, cathode, cathode interface layer, Window layer, photoactive layer, buffer layer and anode.The ZnSe of solution synthesis of the present invention is nanocrystalline to be disperseed very well in organic solvent, and the solution is formed Window layer by the way of spin coating, innovative that wide bandgap material is introduced into the design of solar battery structure.By controlling the thickness of buffer layer, the heat treatment temperature and interface processing mode of photoactive layer can reduce Interface composites problem, improve the device performance of solar cell.The device architecture of the present invention widens semi-conducting material in the use function in solar cell field, and the energy conversion efficiency of ZnSe/CdTe heterojunction solar batteries can be improved.And preparation process is simple, and preparation process need not be completed under vacuum conditions, greatly reduce cost of manufacture.
Description
Technical field
The present invention relates to inorganic nano-crystal quantum dot film solar cell fields, and in particular to one kind is based on environment-friendly type, nothing
The cadmium telluride nano crystal solar cell and preparation method thereof of the malicious nanocrystalline buffer layer of wide band gap semiconducter.
Background technology
In recent years, colloidal semiconductor nano crystal solar cell becomes the important research neck of third generation solar cell
Domain.Why the application of Colloidal Quantum Dots in solar cells is concerned, and is the characteristic with solution processable due to it,
This is exploitation large area, inexpensive solar cell provides a kind of possibility.Traditional inorganic semiconductor solar cell (such as silicon substrate
Film, copper indium gallium selenide and cadmium telluride solar cell etc.) photoelectric conversion efficiency be all severely limited by photo-generated carrier in lattice
In thermalization.Although the transformation efficiency of current inorganic nano-crystal solar cell is still than traditional organic photovoltaic cell outline
It is low, but inorganic nano-crystal solar cell maintains the good solar spectrum response of inorganic semiconductor material, carrier transmission performance
And the advantages that good stability, and its band gap is easy to regulate and control, and raw material usage is few, at the same but also with solution processable, at
Originally the advantages such as low, flexible, become the hot spot of scientists study in recent years.
Light-absorption layer present invention introduces wide bandgap semiconductor materials as solar cell forms PN junction with cadmium telluride.Broadband
Gap semiconductor material is typically the semiconductor that energy gap is more than 2.2eV at room temperature.For physically, band gap is wider,
Physicochemical properties are more stable, and radiation resistance is better, and the service life is also longer, and corresponding is exactly lacking for broad-band gap
Point --- this material is less to the absorption of sunlight, and photoelectric conversion efficiency is low, this disadvantage carrys out semiconductor solar cell
Say it is " critical defect ".
Invention content
The shortcomings that for the above wide bandgap material, the object of the present invention is to provide one kind based on environment-friendly type, nontoxic broad-band gap
Cadmium telluride nano crystal solar cell of semiconductor nano buffer layer and preparation method thereof.The solar cell is by introducing broad-band gap
Semiconductor nano crystal layer by interface processing and adjusts temperature regulation and control battery performance, to improve the shortwave of battery as Window layer
Response.
The purpose of the present invention is achieved through the following technical solutions.
A kind of cadmium telluride nano crystal solar cell based on environment-friendly type, the nanocrystalline buffer layer of nontoxic wide band gap semiconducter, institute
Stating solar cell, lamination forms successively by glass substrate, cathode, cathode interface layer, Window layer, photoactive layer, buffer layer, anode；
The Window layer is that ZnSe is nanocrystalline；The buffer layer is MoOx。
Preferably, the material of the cathode is tin-doped indium oxide transparent conductive film (ITO).
Preferably, the cathode interface layer is ZnO；The thickness of the ZnO is 30-40nm.
Preferably, nanocrystalline using high temperature microemulsion solution method synthesis ZnSe, the nanocrystalline energy that this synthetic method synthesizes
It is enough good to be scattered in the organic solutions such as normal propyl alcohol, pyridine.
Preferably, the thickness of the Window layer is 80-120nm, and further preferred window layer thickness is 100nm..
Preferably, the photoactive layer is made of CdTe quantum, the thickness of thickness 400-450nm, CdTe photoactive layer
Degree can be realized by the concentration of adjusting nanocrystal solution, spin coating rotating speed and the temperature of time and heat treatment, can also be passed through
Change the spin coating number of plies to adjust.
Preferably, the buffer layer MoOxMiddle x is 1-3；The thickness of the buffer layer is 8~10nm, further preferably
8nm, buffer layer solve the problems, such as the interfacial contact of CdTe and Au.
Preferably, the material of the anode is Au, thickness 20-100nm, further preferably 80-100nm, Jin Shiyi
Kind high work function, work function 5.1eV can be with the HOMO level-density parameters of CdTe so that the performance of device is more stablized.
A kind of above-described cadmium telluride based on environment-friendly type, the nanocrystalline buffer layer of nontoxic wide band gap semiconducter is nanocrystalline too
The preparation method in positive electricity pond, with the inverted structure of ITO/ZnO/ZnSe/CdTe/MoOx/Au, using the method system of spin coating layer by layer
It is standby, include the following steps：
(1) glass substrate for being attached with cathode is cleaned, it is dry；
(2) by the way of solution processing cathode interface layer is deposited in cathode surface；
(3) Window layer is prepared on cathode interface layer using solution processing method；
(4) photoactive layer is prepared in Window layer using solution processing method；
(5) buffer layer is deposited on photoactive layer using vapour deposition method；
(6) anode is deposited using vapour deposition method on the buffer layer, obtained nanocrystalline slow based on environment-friendly type, nontoxic wide band gap semiconducter
Rush the cadmium telluride nano crystal solar cell of layer.
Preferably, this method specifically includes following steps：
(1) sol-gel methods is used to prepare the presoma of ZnO, the presoma of ZnO is spin-coated, brushing, spraying, dip-coating, roller
Painting, printing or inkjet printing mode are covered on cathode, and cathode interface layer is formed through oversintering；
(2) it uses solvent structure ZnSe nanocrystalline, is dissolved in ZnSe is nanocrystalline in organic solvent, obtains a concentration of
ZnSe solution is spin-coated on cathode interface layer at 120-180 DEG C and deposits ZnSe films by the ZnSe solution of 45-50mg/mL, then
It is sintered under 360-380 DEG C of high temperature, obtains Window layer；
(3) solvent structure CdTe nanometer crystalline is used, is re-dissolved in organic solvent, obtains the solution of black, by institute
Solution spin coating, brushing, spraying, dip-coating, roller coating, printing or the inkjet printing for obtaining black deposit CdTe nanometers on ZnSe films
Crystalline substance immerses in saturation caddy methanol solution, then be heat-treated at 330-350 DEG C later, and deposition CdTe nanometer crystalline is repeated several times and obtains
To photoactive layer；
(4) MoOx and Au electrodes are deposited on photoactive layer, obtain nanocrystalline slow based on environment-friendly type, nontoxic wide band gap semiconducter
Rush the cadmium telluride nano crystal solar cell of layer.
It is further preferred that nanocrystalline using solvent structure ZnSe in step (2), be use ZnO as Zn before
Body is driven, using hexadecylamine as solvent, using tetradecylic acid as ligand, using TOP-Se as the presoma of Se.
It is furthermore preferred that use solvent structure ZnSe is nanocrystalline in step (2), (performance is stable, appearance and size is controllable, mixes
Miscellaneous amount is controllable, monodispersity is good in organic solvent), include the following steps：In 100mL there-necked flasks, addition 2mmol ZnO,
10mmol lauric acid (tetradecylic acid), 16mmol HDA (hexadecylamine) are replaced ten minutes in nitrogen, are warming up to
300 DEG C, rapid to inject 2.5mL TOP-Se solution (0.8mmol/mL), temperature is down to 280 DEG C, reacts 30 minutes.Toward reactant
Middle addition 45mL absolute ethyl alcohols (for cleaning) are heated to gentle boil state, flow back 5 minutes, centrifuge, in branched centrifugation
Hot ethanol (50-70 DEG C, in total 40mL) is added in pipe, the product in centrifuge tube is transferred in clean there-necked flask, is heated to
Fluidized state flows back 5 minutes, centrifuges, and continues to repeat the above steps primary, 3 times in total；Product drying is centrifuged, 12- is added
In 15mL pyridines, under nitrogen protection, 120 DEG C are flowed back 12 hours, and n-hexane, which is added, when collecting product centrifuges, and obtains faint yellow
Solid, drying.With normal propyl alcohol and pyridine volume ratio for 1：1 solution matches the lurid zinc selenide of 50mg/ml as solvent
Solution.50mg/ml this be maximum concentration under the premise of Dispersion of Solute Matter is good；And comparison pure pyridine or pure propyl alcohol are molten
Agent, 1：The effect of 1 pyridine and the mixed solvent dissolving selenizing zinc nanocrystalline of normal propyl alcohol is best, disperses in this organic solvent
Well, it can well be filtered in 0.45 μm of filtering head.
Determine the interfacial structure and pattern between ZnSe and CdTe.The CdTe nanometer crystalline that pattern determines is by CdCl2Heat
There is specific crystal structure after processing, the variation that influence of the preparation process to interface topography structure is brought can be detected.
It advanced optimizes, above-mentioned prepared rotating speed spin coating 20s of the selenizing zinc solution through 2000r/min, single layer nanometer
Epitaxial thickness about 25nm.ZnSe Window layers are prepared using the method for the sintering of spin coating layer by layer.Film forming is first deposited at 150 DEG C, then 380
It is sintered under DEG C high temperature.
It is further preferred that the preparation method of the photoactive layer in solar cell includes the following steps：Using solvent-thermal method
CdTe nanometer crystalline is prepared, is dissolved in organic solvent.The method through spin coating is deposited on after the nanocrystal solution of gained is filtered
On Window layer, saturation caddy methanol solution about 10S is immersed later, then be heat-treated a period of time at 350 DEG C, can get single layer
Nano-crystal film.Be layering later with same technique, prepare the photoactive layer of overall thickness about 450nm, even compact, layer with
Interface layer defect is few.CdTe nanometer crystalline reference literature (S.Sun, H.M.Liu, Y.P.Gao, D.H.Qin,
J.Materials.Chenistry., gained 2012,517,6853-6856.) is prepared.
Compared with prior art, the invention has the advantages that and beneficial outcomes：
(1) solar cell of the present invention uses inverted structure so that P-N junction area ensure that current-carrying close to incident light beam strikes face
The efficient collection and separation of son, can greatly improve the performance of the nanocrystalline heterojunction solar battery of cadmium telluride of inverted structure, energy
Transfer efficiency is about averagely 2-3.5%, can reach 3.61%, and device stability preferably (tests device performance after a week
Parameter does not decline substantially).
(2) anode using Au as hole-collecting electrode, it is therefore prevented that low workfunction metal and active layer are in direct contact, guarantor
The stability for demonstrate,proving anode, extends the service life of nano crystal solar cell.
(3) MoO is used3As anode buffer layer, MoO3It can stop that low workfunction metal is in direct contact with photoactive layer, one
Aspect MoO3HOMO energy levels be 5.3eV, the HOMO with CdTe has preferable level-density parameter, is easy to the collection in hole；Another party
Face MoO3The leakage current of device can be reduced to increase the open-circuit voltage of device.
(4) it uses ZnSe nanocrystal solutions to prepare Window layer and effectively improves carrier collection efficiency, improve device performance.
(5) solar cell of the invention uses solution processing technology, and ultrathin layer is prepared, and realizes the super of solar cell
Thinning.
(6) preparation process of solar cell of the present invention is simple, saves raw material, large-scale production easy to implement.
Description of the drawings
Fig. 1 is the structural schematic diagram of cadmium telluride nano crystal solar cell of the present invention.
Fig. 2 is ZnSe/CdTe heterojunction solar battery device energy diagrams.
Fig. 3 is the transmission fitted figure of 6 layers of ZnSe (thickness 120nm).
Specific implementation mode
The specific implementation mode of the present invention is further described below in conjunction with example, but embodiments of the present invention are not
It is limited to this.
The present invention solar cell structural schematic diagram as shown in Figure 1, the solar cell by glass substrate, cathode, cathode
Lamination forms successively for boundary layer, Window layer, photoactive layer, buffer layer, anode.
Embodiment 1
(1) the glass substrate ITO electro-conductive glass for being attached with cathode is cleaned, it is dry.
(2) by the way of solution processing cathode interface layer is deposited in cathode surface：By Zinc diacetate dihydrate
(3.2925g), ethanol amine (0.905ml), ethylene glycol monomethyl ether (30ml) are fitted into there-necked flask, and sealing adds in 80 DEG C of oil bath
Heat obtains ZnO colloidal sols in two hours.For ZnO as cathode interface layer, ZnO colloidal sols spin-coated (3000r/min, time 20s) are heavy
Product is heat-treated 10min on ITO electro-conductive glass at 200 DEG C, then 10min is heat-treated at 400 DEG C, and sintering forms thickness and is
The cathode interface layer of 40nm, cathode interface layer serve not only as electron transfer layer, can also enhance the electric property of device.
(3) Window layer is prepared on cathode interface layer using solution processing method：It is 1 by the nanocrystalline volume ratios that are dissolved in of ZnSe：1
Normal propyl alcohol and pyridine in the mixed solvent, obtain the ZnSe solution of a concentration of 50mg/mL, then by ZnSe solution through 2000r/min
Rotating speed spin coating 20s be deposited on cathode interface layer, film forming is first deposited at 150 DEG C, then is sintered 40s under 380 DEG C of high temperature, it
It is layering afterwards with same technique, six layers altogether, prepares the Window layer that overall thickness is 100nm.
(4) photoactive layer is prepared in Window layer using solution processing method：CdTe nanometer crystalline is dissolved in pyridine, is received
The brilliant dispersion liquid (45mg/ml) of rice, and after through high speed spin coating (rate 1000r/min, time 20s), be deposited on ZnSe films, it
10S in saturation caddy methanol solution is immersed afterwards, cleans in normal propyl alcohol solution and is dried up with nitrogen, then is heat-treated at 350 DEG C
40s can get single layer nano-crystal film, is repeated 5 times later with same technique.Finally drop 0.1ml CdCl2Saturation methanol
Solution prepares overall thickness on substrate, through high speed spin coating (rate 1000r/min, time 20s) with 350 DEG C of processing 25min
The photoactive layer of 425nm.
(5) use vapour deposition method that MoO is deposited3As buffer layer：Substrate obtained by step (4) is placed in vacuum evaporation chamber, 3
×10-4Under pa vacuum, the buffer layer that thickness is 8nm is formed on photoactive layer.As shown in Fig. 2, MoO3It can stop low work function
Metal is in direct contact with photoactive layer, one side MoO3HOMO energy levels be 5.3eV, the HOMO with CdTe has preferable energy level
Match, is easy to the collection in hole；Another aspect MoO3The leakage current of device can be reduced to increase the open-circuit voltage of device.
(6) anode is deposited using vapour deposition method on the buffer layer：Substrate obtained by step (5) is placed in vacuum evaporation chamber, 3
×10-4Under pa vacuum, continue anode material Au being deposited on MoO by vapor deposition mode3On, form the sun that thickness is 100nm
Pole obtains the cadmium telluride nano crystal solar cell based on environment-friendly type, the nanocrystalline buffer layer of nontoxic wide band gap semiconducter, is labeled as B76.
The cathode interface layer that is sequentially prepared on cathode substrate, ZnSe films, CdTe thin film are in conventional chemistry ventilation
It is carried out in kitchen, does not need any gas shield or especially clean measure.It will be placed in vacuum glove on the substrate for completing spin coating
MoOx and Au is deposited in case.
As shown in table 1, the short circuit current of battery obtained by the present embodiment is relatively low so that and efficiency is general, and up to 1.02%,
But visible device uniformity is preferable.
Embodiment 2
(1) the glass substrate ITO electro-conductive glass for being attached with cathode is cleaned, it is dry.
(2) by the way of solution processing cathode interface layer is deposited in cathode surface：By Zinc diacetate dihydrate
(3.2925g), ethanol amine (0.905ml), ethylene glycol monomethyl ether (30ml) are fitted into there-necked flask, and sealing adds in 80 DEG C of oil bath
Heat obtains ZnO colloidal sols in two hours.ZnO is deposited on ITO as cathode interface layer, spin-coated (3000r/min, time 20s)
10min is heat-treated on electro-conductive glass at 200 DEG C, then is heat-treated 10min at 400 DEG C, sintering forms the moon that thickness is 40nm
Pole boundary layer, cathode interface layer serve not only as electron transfer layer, can also enhance the electric property of device.
(3) cathode interface layer is handled：1,2- dithioglycols are dissolved in absolute methanol solution (a concentration of 0.1mg/ml), are passed through
The rotating speed spin coating 20s of 2000r/min is deposited on cathode interface layer, then the absolute methanol twice of the rotating speed spin coating through 2000r/min
Solution, in order to clean extra 1,2- dithioglycol solution.This solution can reduce cathode interface layer and the interface of Window layer lacks
It falls into.
(4) Window layer is prepared on cathode interface layer using solution processing method：It is 1 by the nanocrystalline volume ratios that are dissolved in of ZnSe：1
Normal propyl alcohol and pyridine in the mixed solvent, obtain the ZnSe solution of a concentration of 50mg/mL, then by ZnSe solution through 2000r/min
Rotating speed spin coating 20s be deposited on cathode interface layer, film forming is first deposited at 150 DEG C, then is sintered under 380 DEG C of high temperature, later
It is layering with same technique, six layers altogether, prepares the Window layer that overall thickness is 120nm.Such as Fig. 3, thickness is 120nm's
ZnSe films can be fitted to obtain the band gap of 2.7eV through transmission test, be consistent for wide bandgap material with its reality.
(5) photoactive layer is prepared in Window layer using solution processing method：CdTe nanometer crystalline is dissolved in pyridine, obtains nanometer
Brilliant dispersion liquid (45mg/ml), and after through high speed spin coating (rate 1000r/min, time 20s), be deposited on ZnSe films, later
10S in saturation caddy methanol solution is immersed, cleans in normal propyl alcohol solution and is dried up with nitrogen, then is heat-treated at 350 DEG C
40s can get single layer nano-crystal film, is repeated 5 times later with same technique.Finally drop 0.1ml CdCl2Saturation methanol
Solution is on substrate, through high speed spin coating (rate 1000r/min, time 20s), with 350 DEG C of processing 25min.Prepare overall thickness
The photoactive layer of 450nm.
(5) use vapour deposition method that MoO is deposited3As buffer layer：Substrate obtained by step (4) is placed in vacuum evaporation chamber, 3
× 10-4Under pa vacuum, the buffer layer that thickness is 8nm is formed on photoactive layer.As shown in Fig. 2, MoO3It can stop low work function
Metal is in direct contact with photoactive layer, one side MoO3HOMO energy levels be 5.3eV, the HOMO with CdTe has preferable energy level
Match, is easy to the collection in hole；Another aspect MoO3The leakage current of device can be reduced to increase the open-circuit voltage of device.
(6) anode is deposited using vapour deposition method on the buffer layer：Substrate obtained by step (5) is placed in vacuum evaporation chamber, 3
×10-4Under pa vacuum, continue anode material Au being deposited on MoO by vapor deposition mode3On, form the sun that thickness is 100nm
Pole obtains the cadmium telluride nano crystal solar cell based on environment-friendly type, the nanocrystalline buffer layer of nontoxic wide band gap semiconducter, is labeled as X31.
The cathode interface layer that is sequentially prepared on cathode substrate, ZnSe films, CdTe thin film are in conventional chemistry ventilation
It is carried out in kitchen, does not need any gas shield or especially clean measure.It will be placed in vacuum glove on the substrate for completing spin coating
MoOx and Au is deposited in case.
As shown in table 1, battery obtained by the present embodiment is anhydrous using 1,2- dithioglycols (EDT) on the basis of embodiment 1
Methanol solution handles the interface between cathode interface layer and Window layer, effectively increases short circuit current, and fill factor is carried
Height, device efficiency are up to 3.70%.
Embodiment 3
(1) the glass substrate ITO electro-conductive glass for being attached with cathode is cleaned, it is dry.
(2) by the way of solution processing cathode interface layer is deposited in cathode surface：By Zinc diacetate dihydrate
(3.2925g), ethanol amine (0.905ml), ethylene glycol monomethyl ether (30ml) are fitted into there-necked flask, and sealing adds in 80 DEG C of oil bath
Heat obtains ZnO colloidal sols in two hours.For ZnO as cathode interface layer, ZnO colloidal sols spin-coated (3000r/min, time 20s) are heavy
Product is heat-treated 10min on ITO electro-conductive glass at 200 DEG C, then 10min is heat-treated at 400 DEG C, and sintering forms thickness and is
The cathode interface layer of 40nm, cathode interface layer serve not only as electron transfer layer, can also enhance the electric property of device.
(3) Window layer is prepared on cathode interface layer using solution processing method：It is 1 by the nanocrystalline volume ratios that are dissolved in of ZnSe：1
Normal propyl alcohol and pyridine in the mixed solvent, obtain the ZnSe solution of a concentration of 50mg/mL, then by ZnSe solution through 2000r/min
Rotating speed spin coating 20s be deposited on cathode interface layer, film forming is first deposited at 150 DEG C, then is sintered 40s under 380 DEG C of high temperature, it
It is layering afterwards with same technique, six layers altogether, prepares the Window layer that overall thickness is 100nm.Thickness is the ZnSe of 100nm
Film can be fitted to obtain the band gap of 2.7eV through transmission test, be consistent for wide bandgap material with its reality.
(4) photoactive layer is prepared in Window layer using solution processing method：CdTe nanometer crystalline is dissolved in pyridine, is received
The brilliant dispersion liquid (45mg/ml) of rice, and after through high speed spin coating (rate 1000r/min, time 20s), be deposited on ZnSe films, it
10S in saturation caddy methanol solution is immersed afterwards, cleans in normal propyl alcohol solution and is dried up with nitrogen, then is heat-treated at 370 DEG C
40s can get single layer nano-crystal film, is repeated 5 times later with same technique.Finally drop 0.1ml CdCl2Saturation methanol
Solution prepares overall thickness on substrate, through high speed spin coating (rate 1000r/min, time 20s) with 330 DEG C of processing 25min
The photoactive layer of 425nm.
(5) use vapour deposition method that MoO3 is deposited as buffer layer：Substrate obtained by step (4) is placed in vacuum evaporation chamber, 3
× 10-4Under pa vacuum, the buffer layer that thickness is 8nm is formed on photoactive layer.As shown in Fig. 2, MoO3It can stop low work function
Metal is in direct contact with photoactive layer, one side MoO3HOMO energy levels be 5.3eV, the HOMO with CdTe has preferable energy level
Match, is easy to the collection in hole；Another aspect MoO3The leakage current of device can be reduced to increase the open-circuit voltage of device.
(6) anode is deposited using vapour deposition method on the buffer layer：Substrate obtained by step (5) is placed in vacuum evaporation chamber, 3
×10-4Under pa vacuum, continue anode material Au being deposited on MoO by vapor deposition mode3On, form the sun that thickness is 100nm
Pole obtains the cadmium telluride nano crystal solar cell based on environment-friendly type, the nanocrystalline buffer layer of nontoxic wide band gap semiconducter, is labeled as X53.
The cathode interface layer that is sequentially prepared on cathode substrate, ZnSe films, CdTe thin film are in conventional chemistry ventilation
It is carried out in kitchen, does not need any gas shield or especially clean measure.It will be placed in vacuum glove on the substrate for completing spin coating
MoOx and Au is deposited in case.
As shown in table 1, battery obtained by the present embodiment improves the heat treatment temperature of CdTe thin film on the basis of embodiment 1
(rising to 370 DEG C by 350 DEG C).It can solve the problems, such as the boundary defect between Partial Window layer and photoactive layer, effectively increase
Short circuit current, device efficiency are up to 3.70%, and device uniformity is not so good as embodiment 2.
Table 1
It is this that there is solar cell of the wide band gap semiconducter nanocrystalline material as receptor.Theoretically, band gap is got over
Width, physicochemical properties are more stable, and this material is less to the absorption of visible light, light absorption is not interfered with, for having
The solar cell of inverted structure can improve response of the battery in short wavelength.
Claims (10)
1. a kind of cadmium telluride nano crystal solar cell based on environment-friendly type, the nanocrystalline buffer layer of nontoxic wide band gap semiconducter, special
Sign is, the solar cell by glass substrate, cathode, cathode interface layer, Window layer, photoactive layer, buffer layer, anode successively
Lamination forms；The Window layer is that ZnSe is nanocrystalline；The buffer layer is MoOx。
2. a kind of cadmium telluride based on environment-friendly type, the nanocrystalline buffer layer of nontoxic wide band gap semiconducter according to claim 1
Nano crystal solar cell, which is characterized in that the material of the cathode is tin-doped indium oxide transparent conductive film.
3. a kind of cadmium telluride based on environment-friendly type, the nanocrystalline buffer layer of nontoxic wide band gap semiconducter according to claim 1
Nano crystal solar cell, which is characterized in that the cathode interface layer is ZnO；The thickness of the ZnO is 30-50nm.
4. a kind of cadmium telluride based on environment-friendly type, the nanocrystalline buffer layer of nontoxic wide band gap semiconducter according to claim 1
Nano crystal solar cell, which is characterized in that the thickness of the Window layer is 80-120nm.
5. a kind of cadmium telluride based on environment-friendly type, the nanocrystalline buffer layer of nontoxic wide band gap semiconducter according to claim 1
Nano crystal solar cell, which is characterized in that the photoactive layer is made of CdTe quantum, thickness 400-450nm.
6. a kind of cadmium telluride based on environment-friendly type, the nanocrystalline buffer layer of nontoxic wide band gap semiconducter according to claim 1
Nano crystal solar cell, which is characterized in that the buffer layer MoOxMiddle x is 1-3；The thickness of the buffer layer is 8 ~ 10nm.
7. a kind of cadmium telluride based on environment-friendly type, the nanocrystalline buffer layer of nontoxic wide band gap semiconducter according to claim 1
Nano crystal solar cell, which is characterized in that the material of the anode is Au, thickness 20-100nm.
8. preparing claim 1-7 any one of them one kind being based on environment-friendly type, the nanocrystalline buffer layer of nontoxic wide band gap semiconducter
Cadmium telluride nano crystal solar cell method, which is characterized in that include the following steps：
(1) glass substrate for being attached with cathode is cleaned, it is dry；
(2) by the way of solution processing cathode interface layer is deposited in cathode surface；
(3) Window layer is prepared on cathode interface layer using solution processing method；
(4) photoactive layer is prepared in Window layer using solution processing method；
(5) buffer layer is deposited on photoactive layer using vapour deposition method；
(6) anode is deposited using vapour deposition method on the buffer layer, obtained based on environment-friendly type, the nanocrystalline buffer layer of nontoxic wide band gap semiconducter
Cadmium telluride nano crystal solar cell.
9. preparation method according to claim 8, which is characterized in that specifically include following steps：
（1）The presoma that ZnO is prepared using sol-gel methods, the presoma of ZnO is spin-coated, brushing, spraying, dip-coating, roller coating,
Printing or inkjet printing mode are covered on cathode, and cathode interface layer is formed through oversintering；
（2）It is nanocrystalline using solvent structure ZnSe, it is dissolved in ZnSe is nanocrystalline in organic solvent, obtains a concentration of 45-
ZnSe nanocrystal solutions are spin-coated on cathode interface layer deposition ZnSe films at 120-180 DEG C by the ZnSe solution of 50mg/mL,
It is sintered under 360-380 DEG C of high temperature again, obtains Window layer；
（3）It using solvent structure CdTe nanometer crystalline, is re-dissolved in organic solvent, obtains the solution of black, gained is black
Solution spin coating, brushing, spraying, dip-coating, roller coating, printing or the inkjet printing of color deposit CdTe nanometer crystalline on ZnSe films, it
It immerses afterwards in saturation caddy methanol solution, then be heat-treated at 300-400 DEG C, deposition CdTe nanometer crystalline is repeated several times and obtains light work
Property layer；
（4）MoOx and Au electrodes are deposited on photoactive layer, obtain based on environment-friendly type, the nanocrystalline buffer layer of nontoxic wide band gap semiconducter
Cadmium telluride nano crystal solar cell.
10. preparation method according to claim 9, which is characterized in that step（2）It is middle to be received using solvent structure ZnSe
Meter Jing is the presoma for using ZnO as Zn, using cetylamine as solvent, using tetradecylic acid as ligand, uses TOP-
Presomas of the Se as Se.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101779290A (en) * | 2007-09-25 | 2010-07-14 | 第一太阳能有限公司 | Photovoltaic devices including an interfacial layer |
| CN102040201A (en) * | 2010-11-05 | 2011-05-04 | 新疆大学 | Solvothermal controllable method for preparing ZnSe and ZnTe nano materials |
| CN102057492A (en) * | 2008-06-05 | 2011-05-11 | 思阳公司 | High efficiency photovoltaic cell and manufacturing method |
| CN103065949A (en) * | 2011-10-21 | 2013-04-24 | 上方能源技术(杭州)有限公司 | Element doping method used for thin-film solar battery and thin-film solar battery |
| CN104505423A (en) * | 2014-11-18 | 2015-04-08 | 华南理工大学 | Inverted-structure CdTe nanocrystalline heterojunction high-efficiency solar cell processed by solution method, and preparation method of solar cell |
| CN107123693A (en) * | 2017-04-14 | 2017-09-01 | 华南理工大学 | A kind of efficient CdTe nanometer crystalline solar cell with high transparency window layer material processed based on solwution method and preparation method thereof |
| CN107919403A (en) * | 2017-10-31 | 2018-04-17 | 华南理工大学 | A kind of efficiently selen-tellurjum cadmium alloy nanometer crystals solar cell and preparation method thereof |
-
2018
- 2018-05-15 CN CN201810458715.XA patent/CN108493285A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101779290A (en) * | 2007-09-25 | 2010-07-14 | 第一太阳能有限公司 | Photovoltaic devices including an interfacial layer |
| CN102057492A (en) * | 2008-06-05 | 2011-05-11 | 思阳公司 | High efficiency photovoltaic cell and manufacturing method |
| CN102040201A (en) * | 2010-11-05 | 2011-05-04 | 新疆大学 | Solvothermal controllable method for preparing ZnSe and ZnTe nano materials |
| CN103065949A (en) * | 2011-10-21 | 2013-04-24 | 上方能源技术(杭州)有限公司 | Element doping method used for thin-film solar battery and thin-film solar battery |
| CN104505423A (en) * | 2014-11-18 | 2015-04-08 | 华南理工大学 | Inverted-structure CdTe nanocrystalline heterojunction high-efficiency solar cell processed by solution method, and preparation method of solar cell |
| CN107123693A (en) * | 2017-04-14 | 2017-09-01 | 华南理工大学 | A kind of efficient CdTe nanometer crystalline solar cell with high transparency window layer material processed based on solwution method and preparation method thereof |
| CN107919403A (en) * | 2017-10-31 | 2018-04-17 | 华南理工大学 | A kind of efficiently selen-tellurjum cadmium alloy nanometer crystals solar cell and preparation method thereof |
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