CN108493265A - A kind of back electrode halftone and dereliction grid solar cell piece - Google Patents
A kind of back electrode halftone and dereliction grid solar cell piece Download PDFInfo
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- CN108493265A CN108493265A CN201810232993.3A CN201810232993A CN108493265A CN 108493265 A CN108493265 A CN 108493265A CN 201810232993 A CN201810232993 A CN 201810232993A CN 108493265 A CN108493265 A CN 108493265A
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- 238000007639 printing Methods 0.000 claims abstract description 48
- 230000011218 segmentation Effects 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000011159 matrix material Substances 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 6
- 239000011267 electrode slurry Substances 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000005538 encapsulation Methods 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 8
- 238000003466 welding Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000013082 photovoltaic technology Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of back electrode halftones, including multiple Printing Zones for being used to prepare back electrode.Multiple Printing Zones are mutually parallel, and the Printing Zone is divided into the printing segmentation of multiple spaced settings, and the printing is divided into the region of more than two and spaced setting.The invention also discloses a kind of dereliction grid solar cell piece, including substrate, the front electrode without main grid being set on the substrate front and the multiple back electrodes being set on substrate back.Multiple back electrodes are mutually parallel, and the back electrode is divided into the back electrode segmentation of multiple spaced settings, and back electrode is divided into the region of more than two and spaced setting.Back electrode made from the back electrode and back electrode halftone of above-mentioned dereliction grid solar cell piece, the pattern that can be formed with front electrode match, and facilitate encapsulation.Moreover, the back electrode saves a large amount of electrode slurry compared to conventional back electrode, production cost is substantially had compressed.
Description
Technical field
The present invention relates to photovoltaic solar cell technical field, especially a kind of back electrode halftone and dereliction grid solar electricity
Pond piece.
Background technology
With the continuous innovation and development of photovoltaic technology, in order to improve efficiency and reduce cost, some new structural light
Volt solar cell also comes into being, and how using simpler processing step and lower to be manufactured into original higher of developing and turns
The photovoltaic solar cell for changing efficiency is the key that photovoltaic technology progress and innovation.
Dereliction grid solar cell is a kind of novel photovoltaic solar cell, by removing its solar battery sheet just
The main gate line in face substitutes main gate line using thin grid line, makes the front of solar battery sheet that more secondary grid lines be used only, and with pole
Thin welding is directly welded with secondary bonding wire, and dereliction grid solar cell reduces the light that positive grid line blocks, and increases
The light-receiving area of solar battery sheet improves the photoelectric conversion efficiency of solar cell, increases the power of solar cell.
But the back electrode figure of dereliction grid solar cell piece can not match with the figure of front electrode, when encapsulation too without main grid
Back electrode and front electrode between positive energy cell piece can not be connected matchingly, and print the back of the body of dereliction grid solar cell piece
Electrode needs the electrode slurry consumed larger, and the production cost of the dereliction grid solar cell is relatively high.
Invention content
In view of this, the purpose of the present invention is to provide a kind of back electrode halftone and dereliction grid solar cell pieces, to solve
The certainly above problem.
In order to achieve the above purpose, present invention employs the following technical solutions：
A kind of back electrode halftone, including multiple Printing Zones for being used to prepare back electrode, multiple Printing Zones are mutually parallel,
Along the length direction of the Printing Zone, the Printing Zone is divided into the printing segmentation of multiple spaced settings, and the print
Brush is divided into the region of more than two and spaced setting.
Preferably, it is described printing segmentation include the spaced setting along the length direction of the Printing Zone the firstth area,
Secondth area and third area.
Preferably, in the orientation of multiple Printing Zones, firstth area, the secondth area and third area length phase
Deng.
Preferably, along the length direction of the Printing Zone, firstth area, the secondth area and third area length ratio
It is 1:2:1.
Preferably, multiple printing segmentation arrangement forms have the matrix of 5~15 rows and 15 row.
A kind of dereliction grid solar cell piece, including substrate, be set on the substrate front without main grid front electricity
Pole and the multiple back electrodes being set on the substrate back, multiple back electrodes are mutually parallel, along the length of the back electrode
It spends on direction, the back electrode is divided into the back electrode segmentation of multiple spaced settings, and the back electrode is divided into two
The part of a above and spaced setting.
Preferably, the back electrode segmentation includes first of the spaced setting along the length direction of the back electrode
Portion, second and third portion.
Preferably, in the orientation of multiple back electrodes, the length phase in described first, second and third portion
Deng.
Preferably, along the length direction of the back electrode, the ratio of the length in described first, second and third portion
It is 1:2:1.
Preferably, multiple back electrode segmentation arrangement forms have the matrix of 5~15 rows and 15 row.
Back electrode made from the back electrode and back electrode halftone of dereliction grid solar cell piece provided by the invention, is equivalent to
With the design of segmented instead of unremitting complete back electrode in conventional dereliction grid solar cell piece so that back electrode is formed
Pattern can with front electrode formed pattern match, facilitate encapsulation；On the other hand, it can carry out stablizing welding with welding
Under the premise of, compared to the complete back electrode in conventional dereliction grid solar cell piece, the back electrode saves a large amount of electrode slurries
Material, substantially has compressed production cost.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of back electrode halftone provided in an embodiment of the present invention；
Fig. 2 is the enlarged diagram of the circular dashed line frame region A in Fig. 1；
Fig. 3 is a kind of structural schematic diagram at the back side of dereliction grid solar cell piece provided in an embodiment of the present invention；
Fig. 4 is the enlarged diagram of the circular dashed line frame region B in Fig. 3.
Specific implementation mode
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the accompanying drawings to the specific reality of the present invention
The mode of applying is described in detail.The example of these preferred embodiments is illustrated in the accompanying drawings.Shown in attached drawing and according to
The embodiments of the present invention of attached drawing description are only exemplary, and the present invention is not limited to these embodiments.
Here, it should also be noted that, in order to avoid having obscured the present invention because of unnecessary details, in the accompanying drawings only
Show the structure and/or processing step closely related with scheme according to the present invention, and be omitted relationship it is little other are thin
Section.
Refering to fig. 1 with shown in Fig. 2, present embodiments provide a kind of back electrode halftone, including multiple be used to prepare back electrode
Printing Zone 1.Multiple Printing Zones 1 are mutually parallel.Along the length direction of the Printing Zone 1, the Printing Zone 1 is divided into
The printing segmentation 11 of multiple spaced settings, and area of 11 points of the printing segmentation for more than two and spaced setting
Domain.
The Printing Zone 1 of above-mentioned back electrode halftone is divided into the printing segmentation 11 of multiple spaced settings, the printing point
Section 11 is divided into as more than two regions, and the pattern for printing back electrode formation obtained can tune to and dereliction grid solar electricity
The pattern of the front electrode of pond piece matches, when being packaged, between adjacent dereliction grid solar cell piece, back electrode and
Front electrode can be correspondingly connected；On the other hand, back electrode made from the back electrode halftone is equivalent to intermittent back electrode
Instead of unremitting complete back electrode in the prior art, compared with the prior art in common dereliction grid solar cell the back of the body
Back electrode made from electrode halftone needs the electrode slurry consumed the i.e. amount of silver paste relatively fewer, significantly reduces and be produced into
This.
Further, the printing segmentation 11 includes the of the spaced setting along the length direction of the Printing Zone 1
One area 111, the second area 112 and third area 113.Back electrode area made from firstth area 111, the second area 112 and third area 113
Domain is connect with same welding respectively, and secondth area 112 is located at the center in firstth area 111 and third area 113, and described second
The contact area of back electrode region and welding made from area 112 is relatively large, can keep being stably connected with welding.
Specifically, in the orientation of the Printing Zone 1, firstth area 111, the second area 112 and third area 113
Equal length.In the present embodiment, in the orientation of the Printing Zone 1, firstth area 111, the second area 112 and third
The length D1 in area 113 is 0.8mm.
Specifically, along the length direction of the Printing Zone 1, firstth area 111, the second area 112 and third area 113
The ratio of length is 1:2:1.In the present embodiment, along the length direction of the Printing Zone 1, the length in firstth area 111
L1 is 0.5mm, and the length L2 in secondth area 112 is 1mm, and the length L3 in the third area 113 is 0.5mm, firstth area
111 and the second interval L4 between area 112 is 0.5mm, and the interval L5 between secondth area 112 and third area 113 is
0.5mm。
In the present embodiment, 11 arrangement forms of multiple printing segmentations have the matrix of 5~15 rows and 15 row.The back of the body
The pattern that the back electrode of electrode screen painting is formed, can be electric with the dereliction grid solar that substitutes 3 main gate lines with 15 thin grid line
The front electrode pattern in pond matches.
With it is the multiple printing be segmented 11 arrangement forms have 10 rows and 15 row matrix calculate, it is provided in this embodiment on
The gross area for stating back electrode made from back electrode halftone is：(0.5mm+1mm+0.5mm) × 0.8mm × 15 × 10=240mm2；
And be about 21mm, width 3mm with the back electrode of three conventional main grid solar cells length, multiple rear electrode arrangements form 3 rows 3
The matrix of row is calculated, and the gross area of back electrode is 21mm × 3mm × 9=567mm2, therefore it is provided in this embodiment above-mentioned
The ratio that back electrode area made from back electrode halftone accounts for about the back electrode area of three conventional main grid solar cells is：
(567-240) ÷ 567=57.7%, i.e., back electrode made from above-mentioned back electrode halftone provided in this embodiment can be saved about
57.7% electrode slurry substantially has compressed the production cost of solar cell.
In conjunction with shown in Fig. 3 and Fig. 4, a kind of dereliction grid solar cell piece, including substrate 2, setting are present embodiments provided
In without main grid on 2 front of the substrate front electrode and multiple back electrodes 3 for being set on 2 back side of the substrate.It is multiple
The back electrode 3 is mutually parallel.Along the length direction of the back electrode 3, the back electrode 3 is divided into multiple spaced set
The back electrode segmentation 31 set, and the back electrode is segmented 31 points of parts for more than two and spaced setting.Wherein, described
Substrate 2 includes with silicon substrate made of silicon chip.
Similarly, in above-mentioned dereliction grid solar cell piece, the back electrode 3 is divided into the back of the body of multiple spaced settings
Electrode segment 31, back electrode segmentation 31 are divided into as more than two parts, the pattern that the back electrode 3 is formed can with it is described
The pattern of the front electrode of dereliction grid solar cell piece matches, when being packaged, adjacent dereliction grid solar cell
Between piece, back electrode 3 and front electrode can be correspondingly connected；On the other hand, the dereliction grid solar cell piece be equivalent to
Intermittent back electrode 3 instead of complete back electrode, compared with the prior art in common dereliction grid solar cell piece, need
The amount of the electrode slurry of consumption is relatively small, significantly reduces production cost.
Further, the back electrode segmentation 31 includes the spaced setting along the length direction of the back electrode 3
First 311, second 312 and third portion 313.
Specifically, in the orientation of the back electrode 3, described first 311, second 312 and third portion 313
Equal length.In the present embodiment, in the orientation of the back electrode 3, described first 311, second 312 and third
The length W1 in portion 313 is 0.8mm.
Specifically, along the length direction of the back electrode 3, described first 311, second 312 and third portion 313
The ratio of length is 1:2:1.In the present embodiment, along the length direction of the back electrode 3, first 311 length
S1 is 0.5mm, and described second 312 length S2 is 1mm, and the length S3 in the third portion 313 is 0.5mm, described first
Interval S4 between 311 and second 312 is 0.5mm, and the described second 312 interval S5 between third portion 313 is
0.5mm。
In the present embodiment, multiple back electrodes, which are segmented 31 arrangement forms, has the matrix of 5~15 rows and 15 row.This reality
In the dereliction grid solar cell for applying example offer, the pattern that back electrode is formed can substitute 3 masters with 15 thin grid line
The pattern that the front electrode of grid line is formed matches.
The present embodiment additionally provides a kind of preparation method of above-mentioned dereliction grid solar cell piece, and the preparation method includes
Following steps：
Step 1: providing a silicon chip, the silicon chip is handled using conventional cleaning and process for etching；
In the step 1, the silicon chip is monocrystalline silicon piece, and resistivity is 1~3Ohmcm, and matte is controlled in 2 μ
m-4μm。
Step 2: carrying out High temperature diffusion processing to the silicon chip, P-doped zone and N is made in the specified region on silicon chip
Type doped region；
In the step 2, square resistance control is 82 Ω or so.
Step 3: carrying out wet etching treatment to the silicon chip, the PN junction of the silicon chip edge is removed；
Step 4: using PECVD device, positive table of the chemical vapour deposition process of using plasma enhancing in the silicon chip
The preparation of antireflective film is carried out on face；
In the step 4, the antireflective film is SiNx film layers, and the film thickness monitoring of the antireflective film is in 72nm or so.
Step 5: conventional back electrode halftone is changed to above-mentioned back electrode halftone provided in this embodiment, in the silicon
Back electrode 3 is printed on the doped region at the piece back side；
In the step 5, printed using conventional printing slurry and with conventional printing parameter, the printing
Slurry is silver paste.
Step 6: being printed using with 3 matched back of the body electric field halftone of the back electrode；
Step 7: using the corresponding halftone of front electrode of dereliction grid solar cell piece, in mixing for the front side of silicon wafer
Front electrode is printed in miscellaneous area；
In the step 7, printed using conventional printing slurry and with conventional printing parameter.
Step 8: being sintered to the front electrode and back electrode 3.
In the step 8, it is sintered with normal sintering parameter.
In conclusion the back electrode 3 and back electrode halftone system of above-mentioned dereliction grid solar cell piece provided in this embodiment
The back electrode obtained is equivalent to the design of segmented instead of unremitting complete back of the body electricity in conventional dereliction grid solar cell piece
Pole so that the pattern that the pattern that back electrode 3 is formed can be formed with front electrode match, and facilitate encapsulation, another aspect, can be with
Welding carries out under the premise of stablizing welding, compared to the complete back electrode in conventional dereliction grid solar cell piece, the back of the body electricity
Pole 3 saves a large amount of electrode slurrys, substantially has compressed production cost.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also include other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
The above is only the specific implementation mode of the application, it is noted that for the ordinary skill people of the art
For member, under the premise of not departing from the application principle, several improvements and modifications can also be made, these improvements and modifications are also answered
It is considered as the protection domain of the application.
Claims (10)
1. a kind of back electrode halftone, which is characterized in that including multiple Printing Zones (1) for being used to prepare back electrode, multiple prints
Brush area (1) is mutually parallel, and along the length direction of the Printing Zone (1), the Printing Zone (1) is divided into multiple spaced set
The printing segmentation (11) set, and the printing segmentation (11) is divided into the region of more than two and spaced setting.
2. back electrode halftone according to claim 1, which is characterized in that the printing segmentation (11) includes along the printing
The firstth area (111), the secondth area (112) and third area (113) of spaced setting on the length direction in area (1).
3. back electrode halftone according to claim 2, which is characterized in that along the orientation of multiple Printing Zones (1)
On, firstth area (111), the secondth area (112) and third area (113) equal length.
4. back electrode halftone according to claim 2, which is characterized in that along the length direction of the Printing Zone (1), institute
The ratio for stating the length in the firstth area (111), the secondth area (112) and third area (113) is 1:2:1.
5. back electrode halftone according to claim 1, which is characterized in that multiple printing segmentation (11) arrangement form tools
There is the matrix of 5~15 rows and 15 row.
6. a kind of dereliction grid solar cell piece, which is characterized in that including substrate (2), be set on the substrate (2) front
The front electrode of no main grid and the multiple back electrodes (3) being set on the substrate (2) back side, multiple back electrode (3) phases
Mutually parallel, along the length direction of the back electrode (3), the back electrode (3) is divided into the back of the body electricity of multiple spaced settings
Pole is segmented (31), and back electrode segmentation (31) is divided into the part of more than two and spaced setting.
7. dereliction grid solar cell piece according to claim 6, which is characterized in that the back electrode is segmented (31) and includes
First (311), second (312) and third portion of spaced setting along the length direction of the back electrode (3)
(313)。
8. dereliction grid solar cell piece according to claim 7, which is characterized in that along multiple back electrodes (3)
In orientation, the equal length of first (311), second (312) and third portion (313).
9. dereliction grid solar cell piece according to claim 7, which is characterized in that the length along the back electrode (3)
On direction, the ratio of the length of first (311), second (312) and third portion (313) is 1:2:1.
10. dereliction grid solar cell piece according to claim 6, which is characterized in that multiple back electrode segmentations
(31) arrangement form has the matrix of 5~15 rows and 15 row.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810232993.3A CN108493265A (en) | 2018-03-21 | 2018-03-21 | A kind of back electrode halftone and dereliction grid solar cell piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810232993.3A CN108493265A (en) | 2018-03-21 | 2018-03-21 | A kind of back electrode halftone and dereliction grid solar cell piece |
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|---|---|
| CN108493265A true CN108493265A (en) | 2018-09-04 |
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| CN201810232993.3A Pending CN108493265A (en) | 2018-03-21 | 2018-03-21 | A kind of back electrode halftone and dereliction grid solar cell piece |
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|---|---|---|---|---|
| CN202934909U (en) * | 2012-12-05 | 2013-05-15 | 江苏中宇光伏科技有限公司 | Sectional type back-electrode screen printing plate |
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| CN205881916U (en) * | 2016-07-21 | 2017-01-11 | 内蒙古日月太阳能科技有限责任公司 | Two -sided electricity generation solar battery of five main grid N types |
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| CN208000922U (en) * | 2018-03-21 | 2018-10-23 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | A kind of back electrode halftone and dereliction grid solar cell piece |
-
2018
- 2018-03-21 CN CN201810232993.3A patent/CN108493265A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN202934909U (en) * | 2012-12-05 | 2013-05-15 | 江苏中宇光伏科技有限公司 | Sectional type back-electrode screen printing plate |
| CN104129183A (en) * | 2014-08-06 | 2014-11-05 | 中利腾晖光伏科技有限公司 | Method of printing obverse-side electrode of solar battery piece |
| CN205881916U (en) * | 2016-07-21 | 2017-01-11 | 内蒙古日月太阳能科技有限责任公司 | Two -sided electricity generation solar battery of five main grid N types |
| CN206412372U (en) * | 2016-12-23 | 2017-08-15 | 泰州乐叶光伏科技有限公司 | Interconnection structure and solar energy laminated batteries between a kind of solar energy laminated batteries piece |
| CN208000922U (en) * | 2018-03-21 | 2018-10-23 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | A kind of back electrode halftone and dereliction grid solar cell piece |
Non-Patent Citations (1)
| Title |
|---|
| 李中兰;汪雷;杨德仁;朱鑫;施易展;蒋维楠;: "背电极花样对单晶硅太阳电池机械性能的影响", 《太阳能学报》, no. 02, pages 225 - 228 * |
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