CN108489414A - A kind of micro/nano-scale memorial alloy round trip memory strain test device and test method - Google Patents
A kind of micro/nano-scale memorial alloy round trip memory strain test device and test method Download PDFInfo
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- CN108489414A CN108489414A CN201810424840.9A CN201810424840A CN108489414A CN 108489414 A CN108489414 A CN 108489414A CN 201810424840 A CN201810424840 A CN 201810424840A CN 108489414 A CN108489414 A CN 108489414A
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- memorial alloy
- probe
- microtrabeculae
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- laser
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
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Abstract
The invention discloses a kind of micro/nano-scale memorial alloy round trip memory strain test device and test methods, by the round trip memory strain of memorial alloy microtrabeculae by being detected record again after laser optical path amplification, so that the quick measurement of memorial alloy microtrabeculae round trip memory strain is achieved, and greatly reduces measurement error.It using pulsed infrared laser light as heat source, can quickly be heated or cooled, meet its strain testing under high-frequency thermal cycle.And hot spot fast moves on receiving screen caused by memorial alloy microtrabeculae strains by high speed camera record, reaction speed is fast, precision is high.
Description
Technical field
The present invention relates to a kind of micro/nano-scale memorial alloy round trip memory strain test device and test methods.
Background technology
With machinery micromation and high-precision requirement, and the potential demand of component reaction speed is executed to improving, grind
The person of studying carefully more pays close attention to the memory alloy material with double-pass memory effect.Therefore, exist for the memorial alloy under micro/nano-scale
Because of the strain of double-pass memory effect generation in heating and cooling procedure, it is necessary to which implementation accurately and fast detects, and then studies memory
The plastic strain amplitude and its stability of alloy double-pass memory effect.For the detection of memorial alloy microtrabeculae strain, also deposit at present
In two problems：First, the geometric dimension of memorial alloy microtrabeculae is smaller, and opposite strain even more reaches nanometer scale, it is difficult to
Ensure directly to measure under the premise of accuracy.Second, memorial alloy microtrabeculae during heating and cooling, the rate of straining of microtrabeculae
Quickly, therefore how quickly to record testing result and will become extremely important.
Invention content
Goal of the invention：For the above-mentioned prior art, a kind of micro/nano-scale memorial alloy round trip memory strain test dress is proposed
It sets and test method, realizes the test of memorial alloy microtrabeculae round trip memory strain under micro/nano-scale.
Technical solution：A kind of micro/nano-scale memorial alloy round trip memory strain test device, including：Light path detects and record
System, probe adjustment system, heating and control system；
Light path detection and record system include receiving screen, He-Ne laser, the first semi-transparent semi-reflecting lens, high speed camera with
And camera controller；Probe adjustment system include CCD, probe, probe carriage, three-dimensional mobile platform, mobile controller and
Computer；The heating and control system include pulse delay generator, prism, pulsed infrared laser, laser controller；
The probe carriage is fixed in the three-dimensional mobile platform driven by the mobile controller, and the mobile controller connects
The computer is connect, the probe is connected by its cantilever beam with the probe carriage, and memorial alloy microtrabeculae is arranged in the trigone
In the horizontal bottom of mirror, the probe is located at right over the memorial alloy microtrabeculae；
The He-Ne laser emergent light penetrates the first semi-transparent semi-reflecting lens vertical irradiation in the end of the probe, instead
Light is penetrated to be reflected on the receiving screen through first semi-transparent semi-reflecting lens；The CCD connections computer, for detecting
State the relative position of probe and the memorial alloy microtrabeculae；The high speed camera is for recording hot spot moving rail on the receiving screen
Mark；
The pulse delay generator connects the laser controller and camera controller, the camera controller connection
The high speed camera, the laser controller connect the pulsed infrared laser, and the outgoing of the pulsed infrared laser swashs
Light heats the memorial alloy microtrabeculae through the prism.
Further, the second semi-transparent semi-reflecting lens are equipped in the light path of first semi-transparent semi-reflecting lens to the receiving screen,
Third semi-transparent semi-reflecting lens are equipped in the light path of first semi-transparent semi-reflecting lens to the probe；Horizontal reflection on the receiving screen
The He-Ne Lasers gone out is reflected into the camera lens of the high speed camera through second semi-transparent semi-reflecting lens；The probe tips are anti-vertically
The He-Ne Lasers part penetrated is reflected into the CCD through the third semi-transparent semi-reflecting lens.
Further, the data of the high speed camera are output to the computer.
The test method of micro/nano-scale memorial alloy round trip memory strain test device, includes the following steps：
Step 1：Mobile controller, which is output a control signal to, by computer is moved to control three-dimensional mobile platform horizontal direction
It is dynamic so that probe tip is located at the surface of memorial alloy microtrabeculae and keeps outrigger horizontal；
Step 2：Light path detection and record system are adjusted, will be vertically reflected back from probe tips by the first semi-transparent semi-reflecting lens
The He-Ne Lasers come is incident on the zero coordinate of receiving screen；
Step 3：The probe is controlled by three-dimensional mobile platform to move vertically downwards, when the hot spot on receiving screen
When deviateing zero coordinate, the probe vertically slowly movement upwards is controlled, until hot spot is returned to the zero of receiving screen
Stop the movement of the probe when on coordinate；
Step 4：The shoot laser that pulsed infrared laser is adjusted by laser controller is incident on prism, and then to note
Recall the heating of alloy microtrabeculae, when temperature rise is to martensite reverse transformation start temperature As, it is inverse that memorial alloy microtrabeculae starts martensite
Phase transformation, the memorial alloy microtrabeculae height increase, and the cantilever beam of the probe upward deflects；It is then shut off pulsed infrared laser light
Device, when memorial alloy microtrabeculae temperature is reduced to martensite start temperature Ms, memorial alloy microtrabeculae starts martensitic traoformation,
The memorial alloy microtrabeculae height declines, and the cantilever beam of the probe deflects down；By high speed camera record receiving screen on because
Hot spot motion track caused by probe deflection.
Further, camera controller is triggered by pulse delay generator and laser controller cooperates.
Further, to control the pulsed infrared laser shoot laser by laser controller micro- to the memorial alloy
The regulation and control of column heating time.
Further, the data transmission high speed camera recorded analyzes high speed phase to computer, by the computer
The hot spot motion track that machine obtains, obtains the round trip memory strain of memorial alloy microtrabeculae.
Advantageous effect：This method coordinates high speed camera to be detected record using laser detection method and strain amplifying method,
He-Ne laser and entire light path are adjusted first, and ensure that high speed camera imaging is good；It is moved secondly by mobile high-precision three-dimensional
Moving platform adjusts the relative position of probe and memorial alloy microtrabeculae, and probe tip is made to contact and keep with memorial alloy microtrabeculae end face
Cantilever level；Then it adjusts pulsed infrared laser light and is incident on prism, and then memorial alloy microtrabeculae is heated, pass through laser
Controller realizes the regulation and control of laser light incident heating time；Finally, by pulse delay generator control pulsed infrared laser and
High speed camera co-ordination, high speed camera records the motion track of the hot spot caused by probe deflection on receiving screen, then will obtain
Hot spot motion track import computer analyzed, finally obtain the round trip memory strain of memorial alloy microtrabeculae.With existing skill
Art is compared, and there are following technique effects by the present invention：
(1) all it is at present macro-scale for the detection of memorial alloy round trip memory strain, strain is larger, convenient for measuring, and
For the memorial alloy under micro/nano-scale, round trip memory strain amplitude even can reach nanometer scale, detection difficulty pole
Greatly.And traditional strain detecting method is all intuitively to measure, for the component of micro/nano-scale, measurement accuracy is insufficient.This
The round trip memory strain of memorial alloy microtrabeculae by being detected record again after laser optical path amplification, is made memorial alloy by invention
The measurement of microtrabeculae round trip memory strain is achieved, and greatly reduces measurement error.
(2) heating in traditional thermal cycle and cooling procedure are more slow, cannot be satisfied memorial alloy in high-frequency heat
Strain testing under cycle.The present invention, as heat source, can be quickly heated or cooled using pulsed infrared laser.Pass through high speed phase
Machine can record caused by the strain of memorial alloy microtrabeculae fast moving for hot spot on receiving screen.
Therefore, present invention utilizes CCD micro-imagings, optical detection, strain amplifying method, pulse delay control and high speeds
The technical methods such as detection record overcome and are difficult to accurately examine because memorial alloy microtrabeculae scale is small, round trip memory strain rate is fast
The technical barrier of survey.
Description of the drawings
Fig. 1 is the schematic diagram of the micro/nano-scale memorial alloy round trip memory strain test method of the present invention.
Specific implementation mode
Further explanation is done to the present invention below in conjunction with the accompanying drawings.
As shown in Figure 1, a kind of micro/nano-scale memorial alloy round trip memory strain test device, including：Light path detects and note
Recording system, probe adjustment system, heating and control system.
Light path detects and record system includes receiving screen 2, He-Ne laser 4, the first semi-transparent semi-reflecting lens 5, second semi-transparent half
Anti- mirror 3, high speed camera 6 and camera controller 18.Probe adjustment system includes CCD7, third semi-transparent semi-reflecting lens 8, probe 9, visits
Punch block 12, three-dimensional mobile platform 13, mobile controller 16 and computer 17.Heating and control system include pulse delay
Device 1, prism 11, pulsed infrared laser 14, laser controller 15.
Probe carriage 12 is fixed in the three-dimensional mobile platform 13 driven by mobile controller 16, the connection meter of mobile controller 16
Calculation machine 17.Probe 9 is connected to by its cantilever beam on probe carriage 12.The horizontal base in prism 11 is arranged in memorial alloy microtrabeculae 10
On face, probe 9 is located at right over memorial alloy microtrabeculae 10.
Receiving screen 2, the second semi-transparent semi-reflecting lens 3, the first semi-transparent semi-reflecting lens 5 are set gradually from left to right, meanwhile, He-Ne Lasers
Device 4, the first semi-transparent semi-reflecting lens 5, third semi-transparent semi-reflecting lens 8 are vertically arranged successively, and CCD7 is horizontally set on third semi-transparent semi-reflecting lens 8
Side.Vertical irradiation is at 9 end of probe after 4 emergent light of He-Ne laser penetrates the first semi-transparent semi-reflecting lens 5 and third semi-transparent semi-reflecting lens 8
Portion after the part of the reflection light of 9 end of probe passes vertically through third semi-transparent semi-reflecting lens 8, is reflected through the first semi-transparent semi-reflecting lens 5
It is irradiated on receiving screen 2 after passing through the second semi-transparent semi-reflecting lens 3 after 90 °, another part of the reflection light at the top of cantilever beam is through the
Three semi-transparent semi-reflecting lens 8 enter CCD7, CCD7 connections computer 17, for exploratory probe 9 and memorial alloy microtrabeculae 10 after reflecting 90 °
Relative position.The He-Ne Lasers that horizontal reverse projects on receiving screen 2 is reflected into high speed camera 6 through the second semi-transparent semi-reflecting lens 3
Camera lens, high speed camera 6 are used to record hot spot motion track on receiving screen 2, and record data are sent to the computer 17 of connection.
Pulse delay generator 1 connects laser controller 15 and camera controller 18, the connection high speed of camera controller 18
Camera 6, laser controller 15 connect pulsed infrared laser 14, and the shoot laser of pulsed infrared laser 14 is right through prism 11
Memorial alloy microtrabeculae 10 heats.
According to the test method of the above-mentioned micro/nano-scale memorial alloy round trip memory strain test device of power, including walk as follows
Suddenly：
Step 1：It is horizontal to control three-dimensional mobile platform 13 to output a control signal to mobile controller 16 by computer 17
It moves in direction so that 9 needle point of probe is located at the surface of memorial alloy microtrabeculae 10 and keeps outrigger horizontal, passes through in the process
The position of CCD7 and hot spot on receiving screen 2 judges the relative position of probe 9 and memorial alloy microtrabeculae end face 10.Wherein, three
The transverse shifting precision of dimension mobile platform reaches 20nm, longitudinal movement precision reaches 1nm.
Step 2：Light path detection and record system are adjusted, it will be incident from the reflected He-Ne Lasers of 9 top vertical of probe
Onto the zero coordinate of receiving screen 2.
Step 3：Probe 9 is controlled by three-dimensional mobile platform 13 to move vertically downwards, the hot spot on receiving screen 2
When deviateing zero coordinate, control probe 9 is vertically slowly mobile upwards, until the zero that hot spot is returned to receiving screen 2 is sat
Stop the movement of the probe 9 when putting on, 9 needle point of probe is contacted with 10 end face of memorial alloy microtrabeculae at this time, and probe needle arm is protected
Water holding is flat.
Step 4：The shoot laser that pulsed infrared laser 14 is adjusted by laser controller 15 is incident on prism 11, into
And memorial alloy microtrabeculae 10 is heated, memorial alloy microtrabeculae 10 is rapidly heated, when temperature rise starts temperature to martensite reverse transformation
When spending As, memorial alloy microtrabeculae 10 starts martensite reverse transformation, and memorial alloy microtrabeculae 10 highly increases, the cantilever beam of probe 9 to
Upper deflection.It is then shut off pulsed infrared laser 14, memorial alloy microtrabeculae 10 is because smaller specific heat capacity cools down rapidly, when memory is closed
When 10 temperature of golden microtrabeculae is reduced to martensite start temperature Ms, memorial alloy microtrabeculae 10 starts martensitic traoformation, and memory is closed
Golden microtrabeculae 10 highly declines, and the cantilever beam of probe 9 deflects down.It is recorded on receiving screen 2 by high speed camera 6 because probe 9 deflects
The frame per second of caused hot spot motion track, high speed camera is 1,000,000 frames/second.
Step 5：The data transmission that high speed camera 6 is recorded analyzes hot spot motion track to computer 17, by computer 17,
The round trip memory strain for obtaining memorial alloy microtrabeculae 10 analyzes hot spot motion track by computer and obtains glossing up apart from zero
Maximum value can obtain strain size according to amplification factor.
In the present embodiment, camera controller 18 is triggered by pulse delay generator 1 and laser controller 15 cooperates.
Pulse length by adjusting pulsed infrared laser light, which is realized, controls the heating time of memorial alloy microtrabeculae, to reach accurate tune
The purpose of controlling temperature, the heating of memorial alloy microtrabeculae and cooling procedure used time are 5~1000ns.Further, can also pass through
It controls pulse delay generator 1 and exports the period wave realization high-frequency Thermal Cycling of memorial alloy, and prolonged by controlling pulse
When generator 1 export the level width of period wave and modulate the pulse length of pulsed infrared laser light, to be realized with this right in monocycle
The heating time of memorial alloy microtrabeculae controls.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (7)
1. a kind of micro/nano-scale memorial alloy round trip memory strain test device, which is characterized in that including：Light path detects and record
System, probe adjustment system, heating and control system；
The light path detection and record system include receiving screen (2), He-Ne laser (4), the first semi-transparent semi-reflecting lens (5), high speed
Camera (6) and camera controller (18)；The probe adjustment system includes CCD (7), probe (9), probe carriage (12), three-dimensional
Mobile platform (13), mobile controller (16) and computer (17)；The heating and control system include pulse delay
Device (1), prism (11), pulsed infrared laser (14), laser controller (15)；
The probe carriage (12) is fixed in the three-dimensional mobile platform (13) driven by the mobile controller (16), the movement
Controller (16) connects the computer (17), and the probe (9) is connected by its cantilever beam with the probe carriage (12), remembers
Alloy microtrabeculae (10) is arranged in the horizontal bottom of the prism (11), and the probe (9) is located at the memorial alloy microtrabeculae
(10) right over；
He-Ne laser (4) emergent light penetrate the first semi-transparent semi-reflecting lens (5) vertical irradiation the probe (9) end
Portion, reflection light are reflected into through first semi-transparent semi-reflecting lens (5) on the receiving screen (2)；The CCD (7) connects the meter
Calculation machine (17), the relative position for detecting the probe (9) and the memorial alloy microtrabeculae (10)；The high speed camera (6)
For recording hot spot motion track on the receiving screen (2)；
The pulse delay generator (1) connects the laser controller (15) and camera controller (18), the camera control
Device (18) processed connects the high speed camera (6), and the laser controller (15) connects the pulsed infrared laser (14), described
The shoot laser of pulsed infrared laser (14) heats the memorial alloy microtrabeculae (10) through the prism (11).
2. micro/nano-scale memorial alloy round trip memory strain test device according to claim 1, which is characterized in that in institute
The light path for stating the first semi-transparent semi-reflecting lens (5) to the receiving screen (2) is equipped with the second semi-transparent semi-reflecting lens (3), described the first half
The light path of saturating semi-reflective mirror (5) to the probe (9) is equipped with third semi-transparent semi-reflecting lens (8)；Horizontal reflection on the receiving screen (2)
The He-Ne Lasers gone out is reflected into the camera lens of the high speed camera (6) through second semi-transparent semi-reflecting lens (3)；The probe tips
The He-Ne Lasers part reflected vertically is reflected into the CCD (7) through the third semi-transparent semi-reflecting lens (8).
3. micro/nano-scale memorial alloy round trip memory strain test device according to claim 1, which is characterized in that described
The data of high speed camera (6) are output to the computer (17).
4. special according to the test method of any micro/nano-scale memorial alloy round trip memory strain test devices of right 1-3
Sign is, includes the following steps：
Step 1：Mobile controller (16) is output a control signal to by computer (17) to control three-dimensional mobile platform (13) water
Square to movement so that probe (9) needle point is located at the surface of memorial alloy microtrabeculae (10) and keeps outrigger horizontal；
Step 2：Light path detection and record system are adjusted, will be vertically reflected back from probe tips by the first semi-transparent semi-reflecting lens (5)
The He-Ne Lasers come is incident on the zero coordinate of receiving screen (2)；
Step 3：The probe (9) is controlled by three-dimensional mobile platform (13) to move vertically downwards, when on receiving screen (2)
Hot spot when deviateing zero coordinate, it is vertically slowly mobile upwards to control the probe (9), until hot spot is returned to reception
Stop the movement of the probe (9) when shielding on the zero coordinate of (2)；
Step 4：The shoot laser that pulsed infrared laser (14) is adjusted by laser controller (15) is incident on prism (11),
And then memorial alloy microtrabeculae (10) are heated, when temperature rise is to martensite reverse transformation start temperature As, memorial alloy microtrabeculae
(10) start martensite reverse transformation, memorial alloy microtrabeculae (10) height increases, and the cantilever beam of the probe (9) is inclined upwards
Turn；It is then shut off pulsed infrared laser (14), temperature is reduced to martensite start temperature when memorial alloy microtrabeculae (10)
When Ms, memorial alloy microtrabeculae (10) starts martensitic traoformation, and memorial alloy microtrabeculae (10) height declines, the probe (9)
Cantilever beam deflect down；The hot spot moving rail caused by probe (9) deflects on receiving screen (2) is recorded by high speed camera (6)
Mark.
5. the test method of micro/nano-scale memorial alloy round trip memory strain test device according to claim 4, special
Sign is, triggers camera controller (18) by pulse delay generator (1) and laser controller (15) cooperates.
6. the test method of micro/nano-scale memorial alloy round trip memory strain test device according to claim 5, special
Sign is, pulsed infrared laser (14) shoot laser is controlled to the memorial alloy microtrabeculae by laser controller (15)
(10) regulation and control of heating time.
7. the test method of micro/nano-scale memorial alloy round trip memory strain test device according to claim 5 or 6,
It is characterized in that, by the data transmission of the high speed camera (6) record to computer (17), high speed is analyzed by the computer (17)
The hot spot motion track that camera (6) obtains, obtains the round trip memory strain of memorial alloy microtrabeculae (10).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810424840.9A CN108489414A (en) | 2018-05-07 | 2018-05-07 | A kind of micro/nano-scale memorial alloy round trip memory strain test device and test method |
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| CN201810424840.9A CN108489414A (en) | 2018-05-07 | 2018-05-07 | A kind of micro/nano-scale memorial alloy round trip memory strain test device and test method |
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Cited By (1)
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| CN109226970A (en) * | 2018-11-01 | 2019-01-18 | 徐州工程学院 | A kind of micro/nano-scale high-temperature laser impact imprinting apparatus and method |
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