CN108461605B - A kind of LED photovoltaic glass substrate - Google Patents
A kind of LED photovoltaic glass substrate Download PDFInfo
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- CN108461605B CN108461605B CN201810609175.0A CN201810609175A CN108461605B CN 108461605 B CN108461605 B CN 108461605B CN 201810609175 A CN201810609175 A CN 201810609175A CN 108461605 B CN108461605 B CN 108461605B
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- photovoltaic glass
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- 239000011521 glass Substances 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 title claims abstract description 46
- 239000011159 matrix material Substances 0.000 claims abstract description 59
- 238000006243 chemical reaction Methods 0.000 claims abstract description 51
- 238000002360 preparation method Methods 0.000 claims abstract description 32
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 30
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 26
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 24
- 239000011737 fluorine Substances 0.000 claims abstract description 24
- XDLSXXMJBCNXPS-UHFFFAOYSA-N [Pb].CN Chemical compound [Pb].CN XDLSXXMJBCNXPS-UHFFFAOYSA-N 0.000 claims abstract description 20
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims abstract description 16
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims abstract description 14
- 229960002796 polystyrene sulfonate Drugs 0.000 claims abstract description 14
- 239000011970 polystyrene sulfonate Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 12
- 230000026030 halogenation Effects 0.000 claims abstract description 11
- 238000005658 halogenation reaction Methods 0.000 claims abstract description 11
- 239000004332 silver Substances 0.000 claims abstract description 10
- 229910052709 silver Inorganic materials 0.000 claims abstract description 10
- 239000005725 8-Hydroxyquinoline Substances 0.000 claims abstract description 6
- 239000004411 aluminium Substances 0.000 claims abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229960003540 oxyquinoline Drugs 0.000 claims abstract description 6
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims abstract description 3
- 238000000576 coating method Methods 0.000 claims abstract description 3
- -1 tribromide methylamine lead Chemical compound 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 17
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical group CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 claims description 16
- 238000005660 chlorination reaction Methods 0.000 claims description 9
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- MLLDOLFHWGDQPB-UHFFFAOYSA-N OCC(O)CO.C(=CC1=CC=CC=C1)S(=O)(=O)O Chemical compound OCC(O)CO.C(=CC1=CC=CC=C1)S(=O)(=O)O MLLDOLFHWGDQPB-UHFFFAOYSA-N 0.000 claims description 6
- 238000007739 conversion coating Methods 0.000 claims description 6
- 230000005622 photoelectricity Effects 0.000 claims description 6
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 claims description 5
- 239000000600 sorbitol Substances 0.000 claims description 5
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 claims description 4
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 claims description 2
- AIGALIPXDJWSQQ-UHFFFAOYSA-L I(=O)(=O)[O-].[Pb+2].CN.I(=O)(=O)[O-] Chemical compound I(=O)(=O)[O-].[Pb+2].CN.I(=O)(=O)[O-] AIGALIPXDJWSQQ-UHFFFAOYSA-L 0.000 claims 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 188
- 238000004062 sedimentation Methods 0.000 description 18
- 230000000694 effects Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- YODJCKNTHLUGBU-UHFFFAOYSA-K [Pb](I)(I)I.CN Chemical compound [Pb](I)(I)I.CN YODJCKNTHLUGBU-UHFFFAOYSA-K 0.000 description 8
- 230000004913 activation Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 8
- 229910021529 ammonia Inorganic materials 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 238000007598 dipping method Methods 0.000 description 6
- 239000004005 microsphere Substances 0.000 description 6
- 239000002052 molecular layer Substances 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 6
- 239000013049 sediment Substances 0.000 description 6
- 230000003115 biocidal effect Effects 0.000 description 5
- 238000004090 dissolution Methods 0.000 description 5
- 230000001954 sterilising effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000003139 buffering effect Effects 0.000 description 4
- 230000036541 health Effects 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- 241000894006 Bacteria Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- SMWDFEZZVXVKRB-UHFFFAOYSA-N anhydrous quinoline Natural products N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000003205 fragrance Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 238000009938 salting Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Abstract
The present invention relates to LED photovoltaic glass arts, more particularly to a kind of LED photovoltaic glass substrate, the LED photovoltaic glass substrate is made of matrix, back electrode layer, photoelectric conversion layer, transport layer, buffer layer and cathode layer, back electrode layer is arranged in outer surface of matrix, photoelectric conversion layer is arranged outside back electrode layer, and transport layer is arranged outside photoelectric conversion layer, buffer layer is arranged outside transport layer, cathode layer is set outside buffer layer, wherein back electrode layer is coated by nanometer silver granuel material and prepared；Photoelectric conversion layer is prepared by three halogenation methylamine lead deposits；Transport layer is by poly- 3,4- ethene dioxythiophene/poly styrene sulfonate coating preparation；Buffer layer is by lithium fluoride, 8-hydroxyquinoline aluminium and 2, any one preparation in 9- dimethyl -4,7- diphenyl -1,10- phenanthroline；Cathode layer is deposited by fluorine richness stannic oxide and is prepared.
Description
Technical field
The present invention relates to LED photovoltaic glass art more particularly to a kind of LED photovoltaic glass substrates.
Background technique
LED glass is also known as electrified light emitting glass, automatically controlled fluorescent glass, is invented earliest by Germany, China was in 2006
Success is developed.Have the characteristics that penetrating, anti-riot, waterproof, antiultraviolet, can design.It is mainly used for interior/exterior decoration, furniture is set
The fields such as meter, fluorescent tube Lighting Design, outdoor cladding glass, glass sunlight house design.
But LED photovoltaic glass on the market is both needed to external power supply and provides electric power at present, this will make in the long-term use
Use up a large amount of electric power, and if be to provide a kind of acceptable solar energy and switch to for electric energy, directly to shine in LED photovoltaic glass
LED module provide electric power substrate, then can be achieved energy conservation and environmental protection.
Patent Office of the People's Republic of China discloses a kind of application for a patent for invention of LED photovoltaic glass, including glass on June 16th, 2010
A conductive layer is arranged in substrate, packaged glass and LED, the glass substrate, and the conductive layer forms light emitting diode by etching
The two poles of the earth, the glass substrate and the packaged glass are encapsulated by adhesive layer, but it still needs to external electric power and sends out LED to provide
Light.
Summary of the invention
External power supply being both needed to for the LED photovoltaic glass of solution at present on the market, electric power being provided, this is in the long-term use
The problem of a large amount of electric power will be used, the present invention provides a kind of acceptable sunlight and realizes the LED photovoltaic of photoelectric conversion
Glass substrate.
To achieve the above object, the invention adopts the following technical scheme:
A kind of LED photovoltaic glass substrate, the LED photovoltaic glass substrate is by matrix, back electrode layer, photoelectric conversion layer, biography
Defeated layer, buffer layer and cathode layer composition, back electrode layer setting are arranged outside back electrode layer in outer surface of matrix, photoelectric conversion layer,
Transport layer is set outside photoelectric conversion layer, buffer layer is set outside transport layer, cathode layer is set outside buffer layer, in which:
Back electrode layer is coated by nanometer silver granuel material and is prepared；
Photoelectric conversion layer is prepared by three halogenation methylamine lead deposits；
Transport layer is by poly- 3,4- ethene dioxythiophene/poly styrene sulfonate coating preparation；
Buffer layer is by lithium fluoride, 8-hydroxyquinoline aluminium and 2, appointing in 9- dimethyl -4,7- diphenyl -1,10- phenanthroline
It anticipates a kind of prepare；
Cathode layer is deposited by fluorine richness stannic oxide and is prepared.
Back electrode layer, photoelectric conversion layer, transport layer, buffer layer and cathode layer constitute one on LED photovoltaic glass substrate
A absorbable solar energy simultaneously switchs to solar battery structure for electric energy, at it as glass substrate in use, can convert
Electric energy supplies LED module use on LED photovoltaic glass and achieves and can shine without external power supply, or even can connect dispatch from foreign news agency
Road stores electric energy, to play the effect for saving electric energy, and compared to common silicon solar cell, the solar battery knot
Photoelectric conversion layer, transport layer, buffer layer and the cathode layer of structure are transparent material, have preferably light transmittance, do not influence glass
The normal light transmission of glass, and the nano silver material of back electrode layer can by reduce its thickness degree and design microscopic three-dimensional porous structure with
Realize the effect of high light transmission, so that guaranteeing that its translucency is good when using as glass substrate, the design of buffer layer be can avoid
Free atom, ion are randomly spread and influence transport layer and photoelectric conversion layer during photoelectric conversion, reduce photoelectric conversion
Rate simultaneously influences effect of powering, and fluorine richness stannic oxide has more preferably UV Absorption compared to direct common stannic oxide
Effect can preferably completely cut off ultraviolet light as glass substrate and due to its height so that substrate realizes the filtering to ultraviolet light
The characteristic of absorptivity and fluorine-containing feature have certain antibiotic and sterilizing ability.
Preferably, described matrix is silica glass matrix, and silica glass surface is through three second of 3- aminopropyl
The mixed liquor of oxysilane and 3- aminopropyl trimethoxy siloxane is activated.
Silica substrate is glass matrix a kind of conventional and with very outstanding universality, and surface is through 3- ammonia third
After ethyl triethoxy silicane alkane and 3- aminopropyl trimethoxy siloxane modified active, the hydroxyl group on base silica surface
It is condensed with the hydroxyl of 3- aminopropyl triethoxysilane and 3- aminopropyl trimethoxy siloxane mixed liquor, and through the activation
Amino group entrained by 3- aminopropyl triethoxysilane and 3- aminopropyl trimethoxy siloxane is easy and nanometer after processing
The raw bonding of silver hair, realizes high-intensitive connection, improves the connective stability of nano silver overlay.
Preferably, in the mixed liquor 3- aminopropyl triethoxysilane and 3- aminopropyl trimethoxy siloxane matter
Amount is than being 1:(0.7~1.1), the total mass concentration that the two is added is 35~45wt%.
The 3- aminopropyl triethoxysilane and 3- aminopropyl trimethoxy siloxane of the mass ratio and total mass concentration are mixed
Closing liquid has optimal activation effect.
Preferably, the three halogenations methylamine lead is triiodide methylamine lead, in tribromide methylamine lead and tri-chlorination methylamine lead
Any one.
Triiodide methylamine lead, tribromide methylamine lead and tri-chlorination methylamine lead all have with high optoelectronic transformation efficiency, can
It realizes very excellent photoelectric conversion effect, and since it contains halogens, is provided with certain antibiotic and sterilizing effect
Fruit.
Preferably, poly- 3,4-rthylene dioxythiophene/poly styrene sulfonate third of the transport layer by 25~45wt%
Triol or sorbitol solution are coated in the outer desiccation of photoelectric conversion layer, and in the following drier of 15% humidity after dry 28~34h
Hot padding processing is made.
Poly- 3,4- ethylene dioxy thiophene in poly- 3,4- ethene dioxythiophene/poly styrene sulfonate glycerine or sorbitol solution
The molar concentration rate of pheno and polystyrolsulfon acid is 1:(1~1.3), the salting liquid of the concentration is formed, has height after desiccation
The effect of the effect transmission carriers such as electronics and dissociated ion, and hot pressing is carried out after dry removal excessive moisture in low moisture environments
Print processing can avoid between being forged due to the strand of 3,4-rthylene dioxythiophene/poly styrene sulfonate poly- under high humidity environment
Binding force it is poor, be easy to cause in stripping process and generate the problem of being adhered phenomenon, structure is caused to be destroyed, and after hot padding
The strand of poly- 3,4-rthylene dioxythiophene/poly styrene sulfonate is relocated, and is formd one kind and is conducive to current-carrying
The vertical arrangement pattern of son transmission is a kind of array mechanism that height rises and falls, is more suitable for the movement of carrier.
Preferably, if the buffer layer is prepared by lithium fluoride, with a thickness of 0.8~1.8nm, if the buffer layer is by 8-
Hydroxyquinoline aluminum preparation, with a thickness of 2.8~3.5nm, if the buffer layer is luxuriant and rich with fragrance by 2,9- dimethyl -4,7- diphenyl -1,10-
Quinoline is coughed up, with a thickness of 8~11nm.
Three of the above material can be used as outstanding buffer layer material, but it is distinguished according to different characteristics, wherein lithium fluoride
The preparation cost highest of buffer layer, buffering effect is optimal, the preparation cost of 2,9- dimethyl -4,7- diphenyl -1,10- phenanthroline
Minimum, buffering effect is most bad in three, but still is able to play good buffering effect, and 8-hydroxyquinoline aluminium is between the two
Between, cost and buffering effect are moderate, can be reasonably selected according to demand with use condition, to realize maximum economy and function
Energy benefit simultaneously avoids wasting.
Preferably, fluorine content is 2~5wt% in the fluorine richness stannic oxide.
The excessively high cathode layer that will lead to of fluorine content has centainly to human toxicity, is unfavorable for worker in the process of production and processing
Health, but fluorine content is too low, can greatly weaken its ability and antibiotic and sterilizing ability for absorbing ultraviolet light, and the fluorine of the content
Not only will not have an adverse effect to the health of processing work person, but also can be realized it and have high ultraviolet light absorbing and antibiotic and sterilizing
Performance.
The beneficial effects of the present invention are:
1) LED photovoltaic glass substrate of the invention can be realized photoelectric conversion, be that the LED module in LED photovoltaic glass supplies
Electricity even stores, and realizes energy saving purpose；
2) substrate high light transmittance is maintained while solar battery structure is set；
3) multiple layers of body have antibiotic and sterilizing ability, can be avoided glass and breed bacterium；
4) cathode layer can realize ultraviolet light and effectively absorb, especially can be very big in the case where summer, ultraviolet light was strong
Isolation ultraviolet light.
Specific embodiment
Further clear detailed description explanation is made to the present invention below in conjunction with specific embodiment.
Embodiment 1
A kind of LED photovoltaic glass substrate, the LED photovoltaic glass substrate is by matrix, back electrode layer, photoelectric conversion layer, biography
Defeated layer, buffer layer and cathode layer composition, back electrode layer setting are arranged outside back electrode layer in outer surface of matrix, photoelectric conversion layer,
Transport layer is set outside photoelectric conversion layer, buffer layer is set outside transport layer, cathode layer is set outside buffer layer, in which:
Matrix is silica glass matrix, and silica glass surface is through 3- aminopropyl triethoxysilane and 3- ammonia
The mixed liquor of propyl trimethoxy siloxanes is activated, 3- aminopropyl triethoxysilane and 3- aminopropyl front three in mixed liquor
The mass ratio of oxygroup siloxanes is 1:0.7, and the total mass concentration that the two is added is 35wt%, activation time 15min；
Back electrode layer is coated by nanometer silver granuel material and is prepared, and back electrode is first deposited in activated matrix surface before preparation to form sediment
Powder microsphere nano layer, then on matrix coated with nano elargol or by matrix dipping with nano-silver colloid solution in, control sedimentation time
Controllable back electrode layer thickness, usual sedimentation time are 1~10min, and the sedimentation time of the present embodiment is 1min, then passes through dissolution
Mode remove spherex, i.e., on matrix preparation have three-dimensional porous structure nano-silver layer, nano-silver layer with a thickness of
10nm；
Photoelectric conversion layer is triiodide methylamine lead, tribromide methylamine lead and tri-chlorination methylamine lead deposit by three halogenation methylamine lead
Preparation,；
Transport layer is coated in photoelectricity by poly- 3,4- ethene dioxythiophene/poly styrene sulfonate glycerin solution of 25wt%
The outer desiccation of conversion coating, and in the following drier of 15% humidity after dry 28h hot padding process to be formed it is obtained, after hot padding processing
Transport layer forms a kind of vertical arrangement pattern for being conducive to carrier transport, is a kind of array mechanism that height rises and falls, more
Add the movement for being suitable for carrier；
Buffer layer is the layer of lithium fluoride with a thickness of 0.8nm；
Cathode layer deposits preparation by the fluorine richness stannic oxide that fluorine content is 2wt%.
Through detecting, the incident photon-to-electron conversion efficiency of LED photovoltaic glass substrate prepared by the embodiment is up to 5.81%, light transmittance
Up to 96%.
Embodiment 2
A kind of LED photovoltaic glass substrate, the LED photovoltaic glass substrate is by matrix, back electrode layer, photoelectric conversion layer, biography
Defeated layer, buffer layer and cathode layer composition, back electrode layer setting are arranged outside back electrode layer in outer surface of matrix, photoelectric conversion layer,
Transport layer is set outside photoelectric conversion layer, buffer layer is set outside transport layer, cathode layer is set outside buffer layer, in which:
Matrix is silica glass matrix, and silica glass surface is through 3- aminopropyl triethoxysilane and 3- ammonia
The mixed liquor of propyl trimethoxy siloxanes is activated, 3- aminopropyl triethoxysilane and 3- aminopropyl front three in mixed liquor
The mass ratio of oxygroup siloxanes is 1:1.1, and the total mass concentration that the two is added is 45wt%, activation time 5min；
Back electrode layer is coated by nanometer silver granuel material and is prepared, and back electrode is first deposited in activated matrix surface before preparation to form sediment
Powder microsphere nano layer, then on matrix coated with nano elargol or by matrix dipping with nano-silver colloid solution in, control sedimentation time
Controllable back electrode layer thickness, usual sedimentation time are 1~10min, and the sedimentation time of the present embodiment is 10min, then by molten
The mode of solution removes spherex, i.e., on matrix preparation have three-dimensional porous structure nano-silver layer, nano-silver layer with a thickness of
30nm；
Photoelectric conversion layer is triiodide methylamine lead, tribromide methylamine lead and tri-chlorination methylamine lead deposit by three halogenation methylamine lead
Preparation,；
Transport layer is coated in photoelectricity by poly- 3,4- ethene dioxythiophene/poly styrene sulfonate sorbitol solution of 45wt%
The outer desiccation of conversion coating, and in the following drier of 15% humidity after dry 34h hot padding process to be formed it is obtained, after hot padding processing
Transport layer forms a kind of vertical arrangement pattern for being conducive to carrier transport, is a kind of array mechanism that height rises and falls, more
Add the movement for being suitable for carrier；
Buffer layer is the layer of lithium fluoride with a thickness of 1.8nm；
Cathode layer deposits preparation by the fluorine richness stannic oxide that fluorine content is 5wt%.
Through detecting, the incident photon-to-electron conversion efficiency of LED photovoltaic glass substrate prepared by the embodiment is up to 5.79%, light transmittance
Up to 97%.
Embodiment 3
A kind of LED photovoltaic glass substrate, the LED photovoltaic glass substrate is by matrix, back electrode layer, photoelectric conversion layer, biography
Defeated layer, buffer layer and cathode layer composition, back electrode layer setting are arranged outside back electrode layer in outer surface of matrix, photoelectric conversion layer,
Transport layer is set outside photoelectric conversion layer, buffer layer is set outside transport layer, cathode layer is set outside buffer layer, in which:
Matrix is silica glass matrix, and silica glass surface is through 3- aminopropyl triethoxysilane and 3- ammonia
The mixed liquor of propyl trimethoxy siloxanes is activated, 3- aminopropyl triethoxysilane and 3- aminopropyl front three in mixed liquor
The mass ratio of oxygroup siloxanes is 1:1.05, and the total mass concentration that the two is added is 39wt%, activation time 12min；
Back electrode layer is coated by nanometer silver granuel material and is prepared, and back electrode is first deposited in activated matrix surface before preparation to form sediment
Powder microsphere nano layer, then on matrix coated with nano elargol or by matrix dipping with nano-silver colloid solution in, control sedimentation time
Controllable back electrode layer thickness, usual sedimentation time are 1~10min, and the sedimentation time of the present embodiment is 5min, then passes through dissolution
Mode remove spherex, i.e., on matrix preparation have three-dimensional porous structure nano-silver layer, nano-silver layer with a thickness of
14nm；
Photoelectric conversion layer is triiodide methylamine lead, tribromide methylamine lead and tri-chlorination methylamine lead deposit by three halogenation methylamine lead
Preparation,；
Transport layer is coated in photoelectricity by poly- 3,4- ethene dioxythiophene/poly styrene sulfonate glycerin solution of 35wt%
The outer desiccation of conversion coating, and in the following drier of 15% humidity after dry 30h hot padding process to be formed it is obtained, after hot padding processing
Transport layer forms a kind of vertical arrangement pattern for being conducive to carrier transport, is a kind of array mechanism that height rises and falls, more
Add the movement for being suitable for carrier；
Buffer layer is the 8-hydroxyquinoline aluminium layer with a thickness of 2.8nm；
Cathode layer deposits preparation by the fluorine richness stannic oxide that fluorine content is 3.5wt%.
Through detecting, the incident photon-to-electron conversion efficiency of LED photovoltaic glass substrate prepared by the embodiment is up to 6.03%, light transmittance
Up to 96%.
Embodiment 4
A kind of LED photovoltaic glass substrate, the LED photovoltaic glass substrate is by matrix, back electrode layer, photoelectric conversion layer, biography
Defeated layer, buffer layer and cathode layer composition, back electrode layer setting are arranged outside back electrode layer in outer surface of matrix, photoelectric conversion layer,
Transport layer is set outside photoelectric conversion layer, buffer layer is set outside transport layer, cathode layer is set outside buffer layer, in which:
Matrix is silica glass matrix, and silica glass surface is through 3- aminopropyl triethoxysilane and 3- ammonia
The mixed liquor of propyl trimethoxy siloxanes is activated, 3- aminopropyl triethoxysilane and 3- aminopropyl front three in mixed liquor
The mass ratio of oxygroup siloxanes is 1:0.85, and the total mass concentration that the two is added is 37wt%, activation time 10min；
Back electrode layer is coated by nanometer silver granuel material and is prepared, and back electrode is first deposited in activated matrix surface before preparation to form sediment
Powder microsphere nano layer, then on matrix coated with nano elargol or by matrix dipping with nano-silver colloid solution in, control sedimentation time
Controllable back electrode layer thickness, usual sedimentation time are 1~10min, and the sedimentation time of the present embodiment is 6min, then passes through dissolution
Mode remove spherex, i.e., on matrix preparation have three-dimensional porous structure nano-silver layer, nano-silver layer with a thickness of
17nm；
Photoelectric conversion layer is triiodide methylamine lead, tribromide methylamine lead and tri-chlorination methylamine lead deposit by three halogenation methylamine lead
Preparation,；
Transport layer is coated in photoelectricity by poly- 3,4- ethene dioxythiophene/poly styrene sulfonate glycerin solution of 40wt%
The outer desiccation of conversion coating, and in the following drier of 15% humidity after dry 32h hot padding process to be formed it is obtained, after hot padding processing
Transport layer forms a kind of vertical arrangement pattern for being conducive to carrier transport, is a kind of array mechanism that height rises and falls, more
Add the movement for being suitable for carrier；
Buffer layer is the 8-hydroxyquinoline aluminium layer with a thickness of 3.5nm；
Cathode layer deposits preparation by the fluorine richness stannic oxide that fluorine content is 4wt%.
Through detecting, the incident photon-to-electron conversion efficiency of LED photovoltaic glass substrate prepared by the embodiment is up to 5.89%, light transmittance
Up to 97%.
Embodiment 5
A kind of LED photovoltaic glass substrate, the LED photovoltaic glass substrate is by matrix, back electrode layer, photoelectric conversion layer, biography
Defeated layer, buffer layer and cathode layer composition, back electrode layer setting are arranged outside back electrode layer in outer surface of matrix, photoelectric conversion layer,
Transport layer is set outside photoelectric conversion layer, buffer layer is set outside transport layer, cathode layer is set outside buffer layer, in which:
Matrix is silica glass matrix, and silica glass surface is through 3- aminopropyl triethoxysilane and 3- ammonia
The mixed liquor of propyl trimethoxy siloxanes is activated, 3- aminopropyl triethoxysilane and 3- aminopropyl front three in mixed liquor
The mass ratio of oxygroup siloxanes is 1:1.0, and the total mass concentration that the two is added is 42wt%, activation time 8min；
Back electrode layer is coated by nanometer silver granuel material and is prepared, and back electrode is first deposited in activated matrix surface before preparation to form sediment
Powder microsphere nano layer, then on matrix coated with nano elargol or by matrix dipping with nano-silver colloid solution in, control sedimentation time
Controllable back electrode layer thickness, usual sedimentation time are 1~10min, and the sedimentation time of the present embodiment is 8min, then passes through dissolution
Mode remove spherex, i.e., on matrix preparation have three-dimensional porous structure nano-silver layer, nano-silver layer with a thickness of
20nm；
Photoelectric conversion layer is triiodide methylamine lead, tribromide methylamine lead and tri-chlorination methylamine lead deposit by three halogenation methylamine lead
Preparation,；
Transport layer is coated in photoelectricity by poly- 3,4- ethene dioxythiophene/poly styrene sulfonate sorbitol solution of 41wt%
The outer desiccation of conversion coating, and in the following drier of 15% humidity after dry 32h hot padding process to be formed it is obtained, after hot padding processing
Transport layer forms a kind of vertical arrangement pattern for being conducive to carrier transport, is a kind of array mechanism that height rises and falls, more
Add the movement for being suitable for carrier；
Buffer layer is the 2,9- dimethyl -4,7- diphenyl -1,10- phenanthroline layer with a thickness of 8nm；
Cathode layer deposits preparation by the fluorine richness stannic oxide that fluorine content is 2.5wt%.
Through detecting, the incident photon-to-electron conversion efficiency of LED photovoltaic glass substrate prepared by the embodiment is up to 5.91%, light transmittance
Up to 97%.
Embodiment 6
A kind of LED photovoltaic glass substrate, the LED photovoltaic glass substrate is by matrix, back electrode layer, photoelectric conversion layer, biography
Defeated layer, buffer layer and cathode layer composition, back electrode layer setting are arranged outside back electrode layer in outer surface of matrix, photoelectric conversion layer,
Transport layer is set outside photoelectric conversion layer, buffer layer is set outside transport layer, cathode layer is set outside buffer layer, in which:
Matrix is silica glass matrix, and silica glass surface is through 3- aminopropyl triethoxysilane and 3- ammonia
The mixed liquor of propyl trimethoxy siloxanes is activated, 3- aminopropyl triethoxysilane and 3- aminopropyl front three in mixed liquor
The mass ratio of oxygroup siloxanes is 1:0.75, and the total mass concentration that the two is added is 38.5wt%, activation time 12min；
Back electrode layer is coated by nanometer silver granuel material and is prepared, and back electrode is first deposited in activated matrix surface before preparation to form sediment
Powder microsphere nano layer, then on matrix coated with nano elargol or by matrix dipping with nano-silver colloid solution in, control sedimentation time
Controllable back electrode layer thickness, usual sedimentation time are 1~10min, and the sedimentation time of the present embodiment is 7min, then passes through dissolution
Mode remove spherex, i.e., on matrix preparation have three-dimensional porous structure nano-silver layer, nano-silver layer with a thickness of
18nm；
Photoelectric conversion layer is triiodide methylamine lead, tribromide methylamine lead and tri-chlorination methylamine lead deposit by three halogenation methylamine lead
Preparation,；
Transport layer is coated in light by poly- 3,4- ethene dioxythiophene/poly styrene sulfonate glycerin solution of 31.5wt%
The outer desiccation of electrotransformation layer, and hot padding processes to form obtained, hot padding processing after dry 28h in the following drier of 15% humidity
Transport layer forms a kind of vertical arrangement pattern for being conducive to carrier transport afterwards, is a kind of array mechanism that height rises and falls,
It is more suitable for the movement of carrier；
Buffer layer is the 2,9- dimethyl -4,7- diphenyl -1,10- phenanthroline layer with a thickness of 11nm；
Cathode layer deposits preparation by the fluorine richness stannic oxide that fluorine content is 4wt%.
Through detecting, the incident photon-to-electron conversion efficiency of LED photovoltaic glass substrate prepared by the embodiment is up to 5.99%, light transmittance
Up to 95%.
Claims (7)
1. a kind of LED photovoltaic glass substrate, which is characterized in that the LED photovoltaic glass substrate is by matrix, back electrode layer, photoelectricity
Conversion coating, transport layer, buffer layer and cathode layer composition, back electrode layer setting are being carried on the back in outer surface of matrix, photoelectric conversion layer setting
Outside electrode layer, transport layer is set outside photoelectric conversion layer, buffer layer is set outside transport layer, cathode layer is set outside buffer layer, in which:
Back electrode layer is coated by nanometer silver granuel material and is prepared；
Photoelectric conversion layer is prepared by three halogenation methylamine lead deposits；
Transport layer is by poly- 3,4- ethene dioxythiophene/poly styrene sulfonate coating preparation；
Buffer layer is by lithium fluoride, 8-hydroxyquinoline aluminium or 2, any one in 9- dimethyl -4,7- diphenyl -1,10- phenanthroline
It is prepared by kind；
Cathode layer is deposited by fluorine richness stannic oxide and is prepared.
2. a kind of LED photovoltaic glass substrate according to claim 1, which is characterized in that described matrix is silica glass
Glass matrix, and mixing of the silica glass surface through 3- aminopropyl triethoxysilane and 3- aminopropyl trimethoxy siloxane
Liquid is activated.
3. a kind of LED photovoltaic glass substrate according to claim 2, which is characterized in that 3- aminopropyl in the mixed liquor
Triethoxysilane and the mass ratio of 3- aminopropyl trimethoxy siloxane are 1:(0.7~1.1), the gross mass that the two is added is dense
Degree is 35~45wt%.
4. a kind of LED photovoltaic glass substrate according to claim 1, which is characterized in that the three halogenations methylamine lead is three
Iodate methylamine lead, any one in tribromide methylamine lead and tri-chlorination methylamine lead.
5. a kind of LED photovoltaic glass substrate according to claim 1, which is characterized in that the transport layer is by 25~45wt%
Poly- 3,4-rthylene dioxythiophene/poly styrene sulfonate glycerine or sorbitol solution be coated in the outer desiccation of photoelectric conversion layer,
And hot padding processing is made after dry 28~34h in the following drier of 15% humidity.
6. a kind of LED photovoltaic glass substrate according to claim 1, which is characterized in that if the buffer layer is by lithium fluoride
Preparation, with a thickness of 0.8~1.8nm, if the buffer layer is standby by 8-hydroxyquinoline aluminum, with a thickness of 2.8~3.5nm, institute
If stating buffer layer to be prepared by 2,9- dimethyl -4,7- diphenyl -1,10- phenanthroline, with a thickness of 8~11nm.
7. a kind of LED photovoltaic glass substrate according to claim 1, which is characterized in that in the fluorine richness stannic oxide
Fluorine content is 2~5wt%.
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Denomination of invention: A LED optoelectronic glass substrate Granted publication date: 20190625 Pledgee: Yuyue sub branch of Zhejiang Deqing Rural Commercial Bank Co.,Ltd. Pledgor: ZHEJIANG XIXI GLASS Co.,Ltd. Registration number: Y2024980012373 |