CN108456849B - 平面各向异性磁阻薄膜及其制备方法 - Google Patents
平面各向异性磁阻薄膜及其制备方法 Download PDFInfo
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- CN108456849B CN108456849B CN201810152824.9A CN201810152824A CN108456849B CN 108456849 B CN108456849 B CN 108456849B CN 201810152824 A CN201810152824 A CN 201810152824A CN 108456849 B CN108456849 B CN 108456849B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 230000005291 magnetic effect Effects 0.000 title description 15
- 238000000151 deposition Methods 0.000 claims abstract description 67
- 229910005335 FePt Inorganic materials 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 42
- 239000013077 target material Substances 0.000 claims abstract description 42
- 229910002273 La1–xSrxCoO3 Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000011521 glass Substances 0.000 claims abstract description 17
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 238000004544 sputter deposition Methods 0.000 claims description 104
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 92
- 238000000034 method Methods 0.000 claims description 51
- 229910052786 argon Inorganic materials 0.000 claims description 46
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 24
- 239000001301 oxygen Substances 0.000 claims description 24
- 229910052760 oxygen Inorganic materials 0.000 claims description 24
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 claims description 20
- 230000000694 effects Effects 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 168
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 32
- 239000010408 film Substances 0.000 description 18
- 239000007789 gas Substances 0.000 description 13
- 230000008021 deposition Effects 0.000 description 8
- 230000005415 magnetization Effects 0.000 description 7
- 239000002131 composite material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 230000005426 magnetic field effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/085—Oxides of iron group metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Hall/Mr Elements (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810152824.9A CN108456849B (zh) | 2018-02-20 | 2018-02-20 | 平面各向异性磁阻薄膜及其制备方法 |
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CN201810152824.9A CN108456849B (zh) | 2018-02-20 | 2018-02-20 | 平面各向异性磁阻薄膜及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN108456849A CN108456849A (zh) | 2018-08-28 |
CN108456849B true CN108456849B (zh) | 2020-06-23 |
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CN201810152824.9A Active CN108456849B (zh) | 2018-02-20 | 2018-02-20 | 平面各向异性磁阻薄膜及其制备方法 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6592725B2 (en) * | 2000-08-31 | 2003-07-15 | International Business Machines Corporation | Fabrication method for spin valve sensor with insulating and conducting seed layers |
US7918014B2 (en) * | 2005-07-13 | 2011-04-05 | Headway Technologies, Inc. | Method of manufacturing a CPP structure with enhanced GMR ratio |
CN102867645A (zh) * | 2012-09-27 | 2013-01-09 | 北京科技大学 | 一种提高各向异性磁电阻坡莫合金薄膜热稳定性的方法 |
CN107078210A (zh) * | 2014-11-19 | 2017-08-18 | 株式会社东芝 | 磁阻元件和磁存储器 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4985006B2 (ja) * | 2007-03-20 | 2012-07-25 | 富士通株式会社 | 磁気抵抗効果素子、磁性積層構造体、及び磁性積層構造体の製造方法 |
-
2018
- 2018-02-20 CN CN201810152824.9A patent/CN108456849B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6592725B2 (en) * | 2000-08-31 | 2003-07-15 | International Business Machines Corporation | Fabrication method for spin valve sensor with insulating and conducting seed layers |
US7918014B2 (en) * | 2005-07-13 | 2011-04-05 | Headway Technologies, Inc. | Method of manufacturing a CPP structure with enhanced GMR ratio |
CN102867645A (zh) * | 2012-09-27 | 2013-01-09 | 北京科技大学 | 一种提高各向异性磁电阻坡莫合金薄膜热稳定性的方法 |
CN107078210A (zh) * | 2014-11-19 | 2017-08-18 | 株式会社东芝 | 磁阻元件和磁存储器 |
Non-Patent Citations (2)
Title |
---|
La1-xSrxCoO3外延薄膜和 Fe3O4/NiO 外延双层薄膜的各向异性磁输运性质;崔文瑶;《中国优秀硕士学位论文全文数据库 基础科学辑 》;20170315(第3期);A005-279 * |
Magnetic, electrical properties and magnetoresistance of Cu substituted La0.7Sr0.3CoO3d crystals (0.355d50.45);H.W. Hsu et al;《Materials Science and Engineering》;19991231;第B64卷;180-186 * |
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CN108456849A (zh) | 2018-08-28 |
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Effective date of registration: 20200528 Address after: No. 790, Xingxiu Road, Taishang investment zone, Quanzhou City, Fujian Province Applicant after: QUANZHOU JIADELI ELECTRONIC MATERIAL Co.,Ltd. Address before: 518101 23 Xin'an Lake Garden, Xin'an Street, Baoan District, Shenzhen City, Guangdong Province 203 Applicant before: SHENZHEN WANJIA INTERDYNAMIC TECHNOLOGY Co.,Ltd. |
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Address after: 362122 No. 790, Xingxiu Road, Taiwan investment zone, Quanzhou City, Fujian Province Patentee after: Quanzhou Jiadeli Electronic Materials Co.,Ltd. Country or region after: China Address before: 790 Xingxiu Road, Taiwan business investment zone, Quanzhou, Fujian Patentee before: QUANZHOU JIADELI ELECTRONIC MATERIAL Co.,Ltd. Country or region before: China |
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