CN108447879A - Imaging sensor and the method for forming imaging sensor - Google Patents
Imaging sensor and the method for forming imaging sensor Download PDFInfo
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- CN108447879A CN108447879A CN201810216023.4A CN201810216023A CN108447879A CN 108447879 A CN108447879 A CN 108447879A CN 201810216023 A CN201810216023 A CN 201810216023A CN 108447879 A CN108447879 A CN 108447879A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Abstract
This disclosure relates to a kind of imaging sensor, including：First photodiode, for converting visible light, first photodiode includes the first semi-conducting material；And second photodiode, for converting infrared light, second photodiode includes the second semi-conducting material, wherein first photodiode and second photodiode with it is least partially overlapped in the plan view of the major surfaces in parallel of described image sensor；And upper surface of first photodiode than second photodiode closer to described image sensor for receiving light.Present disclosure also relates to a kind of methods forming imaging sensor.The imaging sensor of the disclosure can sense image in the case of radiation of visible light and Infrared irradiation.
Description
Technical field
This disclosure relates to technical field of semiconductors, it particularly relates to a kind of imaging sensor and formation imaging sensor
Method.
Background technology
Some imaging sensors needs can sense image in the case of radiation of visible light and Infrared irradiation.
Accordingly, there exist the demands to new technology.
Invention content
A kind of method that one purpose of the disclosure is to provide novel imaging sensor and forms imaging sensor.
According to the disclosure in a first aspect, provide a kind of imaging sensor, including：First photodiode, for turning
Visible light is changed, first photodiode includes the first semi-conducting material；And second photodiode, it is infrared for converting
Light, second photodiode include the second semi-conducting material, wherein first photodiode and second photoelectricity
Diode with it is least partially overlapped in the plan view of the major surfaces in parallel of described image sensor；And first photoelectricity two
Upper surface of the pole pipe than second photodiode closer to described image sensor for receiving light.
According to the second aspect of the disclosure, a kind of method forming imaging sensor is provided, including：It is formed for converting
Second photodiode of infrared light and the first photodiode for converting visible light, first photodiode include
First semi-conducting material, second photodiode include the second semi-conducting material, wherein first photodiode and
Second photodiode with it is least partially overlapped in the plan view of the major surfaces in parallel of described image sensor；And institute
State upper surface of first photodiode than second photodiode closer to described image sensor for receiving light.
By referring to the drawings to the detailed description of the exemplary embodiment of the disclosure, the other feature of the disclosure and its
Advantage will become apparent.
Description of the drawings
The attached drawing of a part for constitution instruction describes embodiment of the disclosure, and is used to solve together with the description
Release the principle of the disclosure.
The disclosure can be more clearly understood according to following detailed description with reference to attached drawing, wherein：
Fig. 1 is the schematic diagram of the structure for the imaging sensor for schematically showing one embodiment according to the disclosure.
Fig. 2 is the schematic diagram of the structure for the imaging sensor for schematically showing one embodiment according to the disclosure.
Fig. 3 a to Fig. 3 d are to schematically show the structure of imaging sensor according to some embodiments of the present disclosure to show
It is intended to.
Fig. 4 is showing for the structure of a part for the imaging sensor for schematically showing one embodiment according to the disclosure
It is intended to.
Fig. 5 is the one embodiment schematically shown in the form of the sectional view of the line A-A in Fig. 4 according to the disclosure
Imaging sensor structure schematic diagram.
Fig. 6 to Figure 10 is to respectively illustrate forming the one of imaging sensor according to one exemplary embodiment of the disclosure
The schematic diagram in the section of the imaging sensor at a exemplary each step of method.
Note that in embodiments described below, same reference numeral is used in conjunction between different attached drawings sometimes
It indicates same section or part with the same function, and omits its repeated explanation.In the present specification, using similar mark
Number and letter indicate similar terms, therefore, once being defined in a certain Xiang Yi attached drawing, then do not needed in subsequent attached drawing pair
It is further discussed.
In order to make it easy to understand, the position of each structure, size and range etc. shown in attached drawing etc. do not indicate that reality sometimes
Position, size and range etc..Therefore, disclosed invention is not limited to position, size and range disclosed in attached drawing etc. etc..
Specific implementation mode
The various exemplary embodiments of the disclosure are described in detail now with reference to attached drawing.It should be noted that：Unless in addition having
Body illustrates that the unlimited system of component and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
Scope of disclosure.
It is illustrative to the description only actually of at least one exemplary embodiment below, is never used as to the disclosure
And its application or any restrictions that use.
Technology, method and apparatus known to person of ordinary skill in the relevant may be not discussed in detail, but suitable
In the case of, the technology, method and apparatus should be considered as authorizing part of specification.
In shown here and discussion all examples, any occurrence should be construed as merely illustrative, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
In the disclosure, mean to combine embodiment description to " one embodiment ", referring to for " some embodiments "
Feature, structure or characteristic are included at least one embodiment of the disclosure, at least some embodiments.Therefore, phrase is " at one
In embodiment ", the appearance of " in some embodiments " everywhere in the disclosure be not necessarily referring to it is same or with some embodiments.This
It outside, in one or more embodiments, can in any suitable combination and/or sub-portfolio comes assemblage characteristic, structure or characteristic.
This disclosure relates to imaging sensor include the first photodiode PD1 and the second photodiode PD2.Wherein,
First photodiode PD1 is for converting visible light, and the second photodiode PD2 is for converting infrared light.In addition, the first photoelectricity
Diode PD1 includes the first semi-conducting material, and the second photodiode PD2 includes the second semi-conducting material；First photoelectricity, two pole
Pipe PD1 and the second photodiode PD2 with it is least partially overlapped in the plan view of the major surfaces in parallel of imaging sensor；And
Upper surfaces of the first photodiode PD1 than the second photodiode PD2 closer to imaging sensor for receiving light.
Fig. 1, which is shown, to be schematically shown in the form of the sectional view vertical with the main surface of imaging sensor according to this public affairs
The schematic diagram of the structure of the imaging sensor of the one embodiment opened.In this embodiment, the first light for converting visible light
Electric diode PD1 is located on the second photodiode PD2 for converting infrared light, and the first photodiode PD1 and
Second photodiode PD2 with it is completely overlapped in the plan view of the major surfaces in parallel of imaging sensor.In this case,
Two photodiode PD2 and the first photodiode PD1 can have the permitted maximum photosurface of entire pixel unit
Product.
Fig. 2, which is shown, to be schematically shown in the form of the sectional view vertical with the main surface of imaging sensor according to this public affairs
The schematic diagram of the structure of the imaging sensor of the one embodiment opened.In this embodiment, the first photodiode PD1 with figure
As the major surfaces in parallel of sensor direction on there is the not protrusion T Chong Die with the second photodiode PD2, the protruding portion
Divide depth of the lower surface of T with the lower surface of the second photodiode PD2 on the direction vertical with the main surface of imaging sensor
It spends identical.In this case, the charge generated in the first photodiode PD1 and the second photodiode PD2 can lead to
The transistor crossed under the first photodiode PD1 and the second photodiode PD2 exports.
Since incident light is to enter the first photodiode PD1 and the second photodiode PD2, and the first light from top
Upper surfaces of the electric diode PD1 than the second photodiode PD2 closer to imaging sensor for receiving light, therefore, in order to
It reduces to the greatest extent and incident light is blocked, can will be used to export and be produced in the first photodiode PD1 and the second photodiode PD2
The transistor and circuit of raw charge are both formed under the first photodiode PD1 and the second photodiode PD2.It can be
It is formed in the pixel unit and is generated for being respectively used to collect in the first photodiode PD1 and the second photodiode PD2
The the first floating diffusion region (not shown) and the second floating diffusion region (not shown) of charge.It is shown in Fig. 2 in this case, example
Such as, the first floating diffusion region can be formed from lower surface, i.e. the first floating diffusion region can be positioned at the first photodiode PD1's
Side (such as left side of Fig. 2) is simultaneously spaced apart with the first photodiode PD1 and the second photodiode PD2, and first
The lower surface of floating diffusion region is identical as the depth of lower surface of the first photodiode PD1, the first floating diffusion region and first
The grid (not shown) of the first transistor is formed with below the region being spaced between photodiode PD1, to control the first light
Charge in electric diode PD1 is transferred to the first floating diffusion region.For example, the second floating diffusion region can be formed from lower surface,
That is the second floating diffusion region can positioned at the second photodiode PD2 side (such as right side of Fig. 2) and with the first photoelectricity two
Pole pipe PD1 and the second photodiode PD2 is spaced apart, and the lower surface of the second floating diffusion region and the second photodiode
The depth of the lower surface of PD2 is identical, rectangular under the region being spaced between the second floating diffusion region and the second photodiode PD2
At the grid (not shown) for having second transistor, the second floating expansion is transferred to control the charge in the second photodiode PD2
Dissipate area.
Fig. 1 and Fig. 2 only schematically shows the first photodiode PD1 and the second photodiode with two embodiments
Two kinds of possible position relationships of PD2, in fact, the disclosure is to this, there is no restriction, such as can also be shown in Fig. 3 a to Fig. 3 d
Form.The imaging sensor of the disclosure, as long as converting the first photodiode PD1 of visible light and infrared for converting
Second photodiode PD2 of light with it is least partially overlapped in the plan view of the major surfaces in parallel of imaging sensor and
Upper surfaces of the one photodiode PD1 than the second photodiode PD2 closer to imaging sensor for receiving light, until
In overlap mode in the plan view of imaging sensor of the first photodiode PD1 and the second photodiode PD2 and big
Small relationship etc., without limitation.
Since incident light enters imaging sensor, and the depth that visible light is completely absorbed in a semiconductor material from top
Degree is less than the depth that infrared light is completely absorbed in a semiconductor material, therefore, in the first photodiode PD1 than the second photoelectricity
In the case of upper surfaces of the diode PD2 closer to imaging sensor for receiving light, appropriately designed first photodiode
The depth and/or thickness of PD1 and the second photodiode PD2 can ensure that the second photodiode PD2 only absorbs infrared light
(or being the visible light that the overwhelming majority is used for absorbing infrared light, only absorbs fraction) and the second photodiode will be entered
The infrared light of PD2 fully absorbs.Certainly, if in the usage scenario of the imaging sensor, for the Infrared irradiation the case where
Do not have the presence of visible light or of less demanding to the clarity of image when lower sensing image, then it can also be by the second photoelectricity two
The depth and/or thickness of pole pipe PD2 is designed to absorb visible light and infrared light simultaneously, or need not will enter the second photoelectricity
The infrared light of diode PD2 fully absorbs.
In some embodiments, the first semi-conducting material that the first photodiode PD for converting visible light includes
Band gap (energy bandgap) is more than the second semiconductor material that the second photodiode PD2 for converting infrared light includes
The band gap of material.
Semi-conducting material with smaller band gap, electronics therein are excited to conduction band (conduction by valence band
Band the minimum energy smaller that) must be obtained, i.e., it is easier to be excited, therefore also easier it is absorbed into light therein.Together
The semi-conducting material of sample thickness, the semi-conducting material with smaller band gap usually can band gap of the absorptance with bigger
The more light of semi-conducting material.Since the longer light of wavelength is more difficult to be absorbed, so it is usual to fully absorb longer wavelengths of light
The semi-conducting material for needing the light shorter than fully absorbing wavelength thicker.Therefore in imaging sensor according to these embodiments
In, the second photodiode PD2 for the longer infrared light of absorbing wavelength includes the smaller semi-conducting material of band gap, to
So that in the case where not increasing the thickness of (or not increasing excessively) photodiode, longer wavelengths of infrared light also can be complete
Hypersorption.
In some embodiments, the second semi-conducting material is germanium silicon (SiGe), and the first semi-conducting material is silicon (Si).Ability
Field technique personnel be appreciated that the second semi-conducting material can include SiGe, GaAs, Pbs, PbSe, PbTe, GaSb, InN etc.,
Or any two or more combination semi-conducting material.Those skilled in the art are further appreciated that any III group (boron family) element
(B, Al, Ga, In, Tl), IV races (carbon family) element (C, Si, Ge, Sn, Pb), V races (nitrogen race) element (N, P, As, Sb, Bi) or class
It can be used in forming the second semi-conducting material like object.
In some embodiments, as shown in Figure 1, imaging sensor further includes being electrically isolated structure I.Structure I is electrically isolated by electricity
Dielectric material is formed, and between the first photodiode PD1 and the second photodiode PD2, i.e., in the first photoelectricity two
Formed and be electrically isolated between pole pipe PD1 and the second photodiode PD2 so that charge that the first photodiode PD1 is generated and
The charge that second photodiode PD2 is generated does not interfere with each other.In some embodiments, as shown in Fig. 2, electric isolution structure includes
First part I1 between the lower surface of the first photodiode PD1 and the upper surface of the second photodiode PD2, is also wrapped
Include the second part I2 between the first photodiode PD1 and the side surface of the second photodiode PD2.
In some embodiments, first part I1 by the first semi-conducting material oxide and/or the second semi-conducting material
Oxide formed.For example, can be by making the lower surface of the first photodiode PD1 with the second photodiode PD2's
Semi-conducting material between upper surface is formed first part I1 by oxidation, it is also possible that under the first photodiode PD1
The part contacted with the second photodiode PD2 on surface or the upper surface of the second photodiode PD2 with the first photoelectricity
The part of diode PD1 contacts is formed first part I1 by oxidation.
In some embodiments, the first photodiode PD1 and the second photodiode PD2 is located at same for sensing
In the pixel unit of visible light.Present inventor has found after research, in the pixel unit for sensing visible light, filter
Color device make visible light by while, can also make infrared light (especially near infrared light) pass through, therefore for sensing
The first photodiode PD1 for sensing visible light is set simultaneously in the pixel unit of visible light and for sensing infrared light
Second photodiode PD2 can sense the infrared light by colour filter while visible light of the sensing by colour filter, from
It is exclusively used in the pixel unit of sensing infrared light without being arranged, avoids the reduction of the quality to the sensing image of visible light.
As shown in figure 4, to schematically show the figure of one embodiment according to the disclosure in the form of plan view from above
As the schematic diagram of the structure of a part for sensor.Imaging sensor includes the array formed by multiple pixel units, such as Fig. 4
In each grid represent a pixel unit.It will be understood by those skilled in the art that only image sensing illustrated in fig. 4
A part for device, imaging sensor may include more pixel units.In the imaging sensor using R/G/B color spaces
In, each pixel unit is respectively pixel unit B, the pixel unit G for sensing green light for sensing blue light and for feeling
Survey the pixel unit R of feux rouges.In some embodiments of the present disclosure, the first photodiode PD1 and the second photodiode PD2
Be co-located at it is same for sensing in the pixel unit of visible light, such as can be co-located at it is following it is at least one in：With
In pixel unit B, the pixel unit G for sensing green light and the pixel unit R for sensing feux rouges of sensing blue light.
First photodiode PD1 is arranged in each pixel unit of the imaging sensor of the disclosure, for sense
Survey visible light.And it is used to sense the second photodiode PD2 of infrared light, it can be arranged in each pixel unit, also may be used
To be only provided in partial pixel unit, this is related with the property of imaging sensor, such as in Infrared irradiation
Sense the quality etc. of image.It, can be only to being used in the case where the second photodiode PD2 only is arranged to partial pixel unit
The second photodiode PD2 is arranged in the pixel unit of the light of sensing a certain kind or two kinds of colors, for example, only to being used to sense blue light
Pixel unit B the second photodiode PD2 is set, or only to for sensing blue light pixel unit B and for sensing it is green
Second photodiode PD2 etc. is arranged in the pixel unit G of light；It can also be arranged according to the position of pixel unit in an array,
For example, second photodiode PD2 etc. is arranged in the pixel unit for only arranging odd number odd number row.
Fig. 5 is the one embodiment schematically shown in the form of the sectional view of the line A-A in Fig. 4 according to the disclosure
Imaging sensor structure schematic diagram.Fig. 5 schematically show from left to right pixel unit 110,120,130,
140 structure.Pixel unit 110,120,130,140 respectively includes first the 111,121,131,141, second light of photodiode
Electric diode 112,122,132,142 and colour filter 115 on the first and second photodiodes, 125,135,
145 and lenticule 116,126,136,146.Colour filter be with the matched colour filter of pixel unit, for example, with for sensing blue light
Pixel unit, the pixel unit for sensing green light, and/or the colour filter to match for sensing the pixel unit of feux rouges.
In the example shown in Fig. 4,5, the colour filter 115,135 of pixel unit 110,130 is for so that it is (or basic that feux rouges passes through
It is upper so that feux rouges passes through) colour filter, the colour filter 125,145 of pixel unit 120,140 be for make green light by (or
Essentially such that green light passes through) colour filter.
Imaging sensor shown in fig. 5 further includes being electrically isolated structure.It includes being located at the first photodiode to be electrically isolated structure
111, the first part between 121,131,141 lower surface and the upper surface of the second photodiode 112,122,132,142
113,123,133,143, further include positioned at the first photodiode 111,121,131,141 and the second photodiode 112,
122, the second part 114,124,134,144 between 132,142 side surface, for prevent the first photodiode 111,
121, the charge interference between the 131,141 and second photodiode 112,122,132,142.
In some embodiments, first part 113,123,133,143 can by make the first photodiode 111,
121, the semi-conducting material quilt between 131,141 lower surface and the upper surface of the second photodiode 112,122,132,142
Oxidation and formed, it is also possible that the lower surface of the first photodiode 111,121,131,141 with the second photodiode
112,122,132,142 contact parts or the second photodiode 112,122,132,142 upper surface with the first light
The part that electric diode 111,121,131,141 contacts is formed by oxidation.Second part 114,124,134,144 can pass through
Such as shallow groove isolation structure and realize.
It further includes 211,212,213,214 (the pixel list of electric isolution portion between each pixel unit to be electrically isolated structure
The electric isolution portion on 140 right side of member is not shown), for preventing the charge between each pixel unit from interfering.Electric isolution portion 211,
212, it 213,214 can be realized for example, by shallow groove isolation structure and/or deep groove isolation structure.Imaging sensor further includes position
Optically isolated portion 221,222,223,224 (the optically isolated portion on 140 right side of pixel unit is not shown) between each pixel unit,
Interference for preventing the light between each pixel unit.Optically isolated portion 221,222,223,224 can be for example, by metal gate
Lattice are realized.
The method for forming imaging sensor of the disclosure is described with reference to Fig. 6 to 10 with a specific embodiment.
As shown in fig. 6, being formed by the lower surface of the first semiconductor material layer 10 formed by the first semi-conducting material
The second semiconductor material layer 20 that two semi-conducting materials are formed.It can be by epitaxial growth processing come in the first semiconductor material layer
The second semiconductor material layer 20 is formed on 10 lower surface.Wherein, the band gap of the first semi-conducting material is more than the second semiconductor
The band gap of material.In some embodiments, the first semi-conducting material is silicon (Si), and the second semi-conducting material is germanium silicon
(SiGe)。
As shown in fig. 7, forming the first part 31 for being electrically isolated structure.By the lower surface of the second semiconductor material layer 20,
Oxonium ion is injected to the region that will form the second photodiode.Control the depth of O +ion implanted so that oxonium ion reaches
Near the lower surface of first semiconductor material layer 10 and the upper surface of the second semiconductor material layer 20.Into the first semi-conducting material
The oxonium ion and the first semi-conducting material and/or the second semi-conducting material of layer 10 and/or the second semiconductor material layer 20 occur anti-
It answers, to form the oxide of the first semi-conducting material and/or the oxide of the second semi-conducting material.Based on O +ion implanted
The oxide of depth, the first semi-conducting material of formation is near the lower surface of the first semiconductor material layer 10 the of formation
The oxide of two semi-conducting materials is near the upper surface of the second semiconductor material layer 20, and these oxides all control
The region of the second photodiode will be formed, that is, will be formd in the lower surface of the first photodiode and the second photodiode
Upper surface between electric isolution structure first part 31.
As shown in figure 8, from the lower surface of the second semiconductor material layer 20 formed be electrically isolated structure second part 32 and
Form the second photodiode PD2.Being electrically isolated the second part 32 of structure can be realized by shallow groove isolation structure, for example,
The groove (not shown) upwardly extended can be formed from the lower surface of the second semiconductor material layer 20, the groove is adjacent to the second photoelectricity
The side surface of diode PD2, and filling dielectric material (dielectric substance for including high-k) is formed in the trench
It is electrically isolated the second part 32 of structure.It forms the second photodiode PD2 and is included in the second semiconductor material layer 20 and form
Two PN junctions first carry out the ion note of the second conduction type (such as N-type) for example, from the lower surface of the second semiconductor material layer 20
Enter processing so that the region that will form the second photodiode PD2 of the second semiconductor material layer 20 is formed as the second conductive-type
Then type injects the dopant of the first conduction type (such as p-type) into the second semiconductor material layer 20 of the second conduction type,
To form the second PN junction, to form the second photodiode PD2 in the second semiconductor material layer 20.Second PN junction is by adjacent
The second conduction type (such as N-type) region 51 and the first conduction type (such as p-type) region 52 formed.
It will be understood by those skilled in the art that in Fig. 7, the step shown in 8, formed be electrically isolated structure first part 31,
The limitation of priority is had no between the step of forming the second part 32 for being electrically isolated structure and forming the second photodiode PD2.
For example, the second photodiode PD2 can be initially formed, first part 31 and second part 32 are re-formed；Can also be initially formed
Two parts 32 re-form the second photodiode PD2 and first part 31；It can also be other sequence of steps.Preferably, it notes
Enter oxonium ion with formed the processing of first part 31 the step of forming the second photodiode PD2 (forming the second PN junction) it
Afterwards, in this way, influence of the oxonium ion of injection to the second photodiode PD2 formed can be reduced.
As shown in figure 9, the first PN junction is formed in the first semiconductor material layer 10, to form the first photodiode
PD1.For example, can by from the upper surface of the first semiconductor material layer 10, first carry out the first conduction type (such as p-type) from
Son injection processing is led so that the region that will form the first photodiode PD1 of the first semiconductor material layer 10 is formed as first
Then electric type injects mixing for the second conduction type (such as N-type) into the first semiconductor material layer 10 of the first conduction type
Miscellaneous dose, to form the first PN junction, to form the first photodiode PD1.First PN junction is by the second adjacent conduction type (example
Such as N-type) region 42 and the first conduction type (such as p-type) region 41 formed.Wherein, although being located at the second semi-conducting material
Part 411 in layer 20 can be formed as a part of the first photodiode PD1, but the region 41 of the first conduction type can
To include the part 411 being located in the second semiconductor material layer 20, i.e. part 411 in the second semiconductor material layer 20 can be by
Inject the ion of the first conduction type；Can not also include the part 411 being located in the second semiconductor material layer 20, i.e., the second half
Part 411 in conductor material layer 20 can also be not implanted the ion of the first conduction type, as long as in the first semi-conducting material
The first PN junction is formed in layer 10.
It will be understood by those skilled in the art that in Fig. 8, the step shown in 9, the second photodiode PD2 and shape are formed
At the limitation for having no priority between the step of the first photodiode PD1.For example, the second photoelectricity can be initially formed as shown in the figure
Diode PD2 re-forms the first photodiode PD1, can also be initially formed the first photodiode PD1 and re-form the second photoelectricity
Diode PD2.Even can be before forming the second semiconductor material layer 20, elder generation forms the in the first semiconductor material layer 10
Then one PN junction forms the second semiconductor material layer in the lower surface for the first semiconductor material layer 10 for foring the first PN junction
20, then the second PN junction is formed in the second semiconductor material layer 20 again.
Although in addition, in Fig. 8,9 and corresponding description, the first photodiode PD1 is from the first semi-conducting material
Layer 10 upper surface formed, the second photodiode PD2 be is formed from the lower surface of the second semiconductor material layer 20, but
Field technology personnel are appreciated that the first photodiode PD1 and the second photodiode PD2 can respectively be led from the first half
The upper surface of body material layer 10 or the lower surface of the second semiconductor material layer 20 are formed, for example, can be from the second semi-conducting material
The lower surface of layer 20 forms the first photodiode PD1 and the second photodiode PD2, from the upper of the first semiconductor material layer 10
Surface forms the first photodiode PD1 and the second photodiode PD2, or from the upper surface of the first semiconductor material layer 10
It forms the second photodiode PD2 and forms the first photodiode PD1 from the lower surface of the second semiconductor material layer 20.First
Photodiode PD1 and the second photodiode PD2 are formed from the surface of hithermost semiconductor material layer respectively, i.e. the first light
Electric diode PD1 is from the upper surface of the first semiconductor material layer 10 is formed, the second photodiode PD2 is from the second semi-conducting material
The lower surface of layer 20 is formed, it is possible to reduce the number that ion implanting is carried out from the same surface, so as to mitigate ion implanting
Damage to semi-conducting material.
As shown in Figure 10, colour filter 60 and lenticule 70 are formed on the first photodiode PD1.Wherein, colour filter
60 with for sensing the pixel unit, the pixel unit for sensing green light, and/or the pixel unit for sensing feux rouges of blue light
Match, i.e., colour filter 60 can be enable to blue and green light, and/or feux rouges by colour filter.In this way, for feeling
It surveys in the pixel unit of visible light, forms two pole of the first photoelectricity for converting visible light being co-located in the pixel unit
Pipe PD1 and the second photodiode PD2 for converting infrared light, and two pole the first photodiode PD1 and the second photoelectricity
Electric isolution structure is formed between pipe PD2.Wherein, the first photodiode PD1 includes the first semi-conducting material, the second photoelectricity two
Pole pipe PD2 includes the second semi-conducting material, wherein the first photodiode PD1 and the second photodiode PD2 are passed with image
It is least partially overlapped in the plan view of the major surfaces in parallel of sensor；And the first photodiode PD1 is than the second photodiode
Upper surfaces of the PD2 closer to imaging sensor for receiving light.
Although in the above description, the first conduction type is p-type, the second conduction type is N-type, i.e., no matter in the first photoelectricity
All it is n-type region in upper and p type island region domain under in diode PD1 or in the second photodiode PD2；But this field skill
Art personnel are appreciated that the first conduction type may be N-type, and the second conduction type may be p-type, i.e., in the first photoelectricity two
In pole pipe PD1 or the second photodiode PD2, can also be n-type region in lower and p type island region domain upper.In addition, the first photoelectricity
The upper and lower relation of the n-type region and p type island region domain of diode PD1 and the second photodiode PD2 can be different, for example, the first light
Electric diode PD1 can be that in upper and p type island region domain, (it is P that region 42 i.e. as shown in the figure is n-type region 41 to n-type region under
Type), while the second photodiode PD2 can be p type island region domain (region 51 is the areas PXing Er i.e. in figure under in upper and n-type region
Domain 52 is N-type).
After foring the second semiconductor material layer 20, can be formed in pixel unit transistor (such as will
The transmission transistor of charge-trapping in photodiode to floating diffusion region), for by the photoelectricity two in current pixel unit
Electric isolution portion that pole pipe is isolated with neighbouring pixel unit (such as electric isolution portion shown in fig. 5 211,212,213,214 or these
The part in electric isolution portion) and it is respectively used to collect the first and second floating of charge in the first and second photodiodes
Set diffusion region (not shown).The above processing can be carried out in the lower surface of the second semiconductor material layer 20.
For example, can be in the left side (such as in the second semiconductor material layer 20 or of part 411 as shown in Figure 10
In two semiconductor material layers 20 and the first semiconductor material layer 10) formed (such as can be handled by ion implanting) first it is floating
Diffusion region, the first floating diffusion region and the first photodiode PD1 are separately；It can also be in the first floating diffusion region and the first light
The lower section in the regions of electric diode PD1 separately forms the gate structure of the first transmission transistor.In this way, when applying voltage to the
The gate structure of one transmission transistor is so that when the first transmission transistor is connected, due to absorbing in the first photodiode PD1
Visible light and the charge that generates can be transferred in the first floating diffusion region, that is, are collected into the first floating diffusion region, to use
The output of image is sensed under visible light in the pixel unit.Due in the example shown in Fig. 10, the first photodiode PD1
N-type region 42 and the channel region of the first transmission transistor between there is also p type island region domain 41 (may include part 411), because
This, can form in p type island region domain 41 for the channel region by the electron-transport in n-type region 42 to the first transmission transistor
N-type channel, which can be by forming stair-stepping N-type channel and reality by the way that ion implanting is handled in p type island region domain 41
It is existing.Similarly, it can be formed in method similar to the above second floating for collecting the charge in the second photodiode PD2
Diffusion region and the second transmission transistor are set, such as the second floating diffusion region can be positioned at the right side of the second photodiode PD2 simultaneously
Separately with the second photodiode PD2, the gate structure of the second transmission transistor is located at the second photodiode PD2 and second
The lower section of interval region between floating diffusion region.
Can by from the lower surface of the second semiconductor material layer 20 formed shallow groove isolation structure or deep groove isolation structure come
The part in electric isolution portion 211,212,213,214 as shown in Figure 5 is formed, it can also be by from the first semiconductor material layer 10
Upper surface form shallow groove isolation structure or deep groove isolation structure to form the another part in these electric isolution portions.It needs to illustrate
It is that electric isolution portion should be formed about pixel unit (being surrounded on the plan view of the major surfaces in parallel of imaging sensor),
Surround the structures such as the first and second photodiodes, each transistor, floating diffusion region formed.
It, can also be in addition, after foring the electric isolution portion of floating diffusion region, each transistor and lower surface
The structures such as metal interconnecting layer (not shown) are formed under second semiconductor material layer 20.
Although the image of pixel region is only schematically shown in the attached drawing of the disclosure in the form of sectional view and plan view
The structure of sensor, those skilled in the art can obtain the image sensing involved by the disclosure based on the content that the disclosure is recorded
The structure and forming method of device entirety.
Word " A or B " in specification and claim includes " A and B " and " A or B ", rather than is exclusively only wrapped
Include " A " or only include " B ", unless otherwise specified.
Word "front", "rear", "top", "bottom" in specification and claim, " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word used in this way
Language is interchangeable in appropriate circumstances so that embodiment of the disclosure described herein, for example, can in this institute
Those of description show or other, which is orientated in other different orientations, to be operated.Unless stated otherwise, in conjunction with attached drawing in specification
The statements such as used "upper", "lower", "left", "right", "front", "rear", "top", "bottom", " side ", refer to read when description
The direction of its "upper", "lower", "left", "right", "front", "rear", "top", "bottom", " side " when person reads attached drawing.
As used in this, word " illustrative " means " be used as example, example or explanation ", not as will be by
" model " accurately replicated.It is not necessarily to be interpreted than other realization methods in the arbitrary realization method of this exemplary description
It is preferred or advantageous.Moreover, the disclosure is not by above-mentioned technical field, background technology, invention content or specific implementation mode
Given in the theory that is any stated or being implied that goes out limited.
As used in this, word " substantially " means comprising the appearance by the defect, device or the element that design or manufacture
Arbitrary small variation caused by difference, environment influence and/or other factors.Word " substantially " also allows by ghost effect, makes an uproar
Caused by sound and the other practical Considerations being likely to be present in actual realization method with perfect or ideal situation
Between difference.
Foregoing description can indicate to be " connected " or " coupled " element together or node or feature.As used herein
, unless explicitly stated otherwise, " connection " means an element/node/feature with another element/node/feature in electricity
Above, it is directly connected mechanically, in logic or in other ways (or direct communication).Similarly, unless explicitly stated otherwise,
" coupling " mean an element/node/feature can with another element/node/feature in a manner of direct or be indirect in machine
On tool, electrically, in logic or in other ways link to allow to interact, even if the two features may not direct
Connection is also such.That is, " coupling " is intended to encompass the direct connection and connection, including profit indirectly of element or other feature
With the connection of one or more intermediary elements.
In addition, just to the purpose of reference, can also be described below it is middle use certain term, and thus not anticipate
Figure limits.For example, unless clearly indicated by the context, be otherwise related to the word " first " of structure or element, " second " and it is other this
Class number word does not imply order or sequence.
It should also be understood that one word of "comprises/comprising" as used herein, illustrates that there are pointed feature, entirety, steps
Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or increase one or more of the other feature, entirety, step, behaviour
Work, unit and/or component and/or combination thereof.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering all modes for obtaining object
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembly ", and/or " order " object etc..
It should be appreciated by those skilled in the art that the boundary between aforesaid operations is merely illustrative.Multiple operations
It can be combined into single operation, single operation can be distributed in additional operation, and operating can at least portion in time
Divide and overlappingly executes.Moreover, alternative embodiment may include multiple examples of specific operation, and in other various embodiments
In can change operation order.But others are changed, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
In addition, embodiment of the present disclosure can also include following example：
1. a kind of imaging sensor, which is characterized in that including：
First photodiode, for converting visible light, first photodiode includes the first semi-conducting material；With
And
Second photodiode, for converting infrared light, second photodiode includes the second semi-conducting material,
In,
First photodiode and second photodiode are in the major surfaces in parallel with described image sensor
Plan view in it is least partially overlapped；And
First photodiode is than second photodiode closer to described image sensor for receiving
The upper surface of light.
2. the imaging sensor according to 1, which is characterized in that the band gap of first semi-conducting material is more than described
The band gap of second semi-conducting material.
3. the imaging sensor according to 1, which is characterized in that first photodiode is flat with the main surface
There is the not protrusion Chong Die with second photodiode on capable direction.
4. the imaging sensor according to 3, which is characterized in that the lower surface of the protrusion and second photoelectricity
Depth of the lower surface of diode on the direction vertical with the main surface is identical.
5. the imaging sensor according to 1, which is characterized in that further include：
It is electrically isolated structure, between first photodiode and second photodiode, the electric isolution
Structure is formed by dielectric substance.
6. the imaging sensor according to 5, which is characterized in that the electric isolution structure includes being located at first photoelectricity
First part between the lower surface of diode and the upper surface of second photodiode.
7. the imaging sensor according to 6, which is characterized in that the electric isolution structure further includes being located at first light
Second part between electric diode and the side surface of second photodiode.
8. the imaging sensor according to 6, which is characterized in that the first part is by first semi-conducting material
The oxide of oxide and/or second semi-conducting material is formed.
9. the imaging sensor according to 1, which is characterized in that first photodiode and second photoelectricity two
Pole pipe is co-located in a pixel unit, wherein the pixel unit is for sensing visible light.
10. the imaging sensor according to 1, which is characterized in that first photodiode and second photoelectricity
Diode be co-located at it is following it is at least one in：For sense the pixel unit of blue light, the pixel unit for sensing green light, with
And the pixel unit for sensing feux rouges.
11. the imaging sensor according to 1, which is characterized in that further include：
Colour filter, be located at first photodiode on, the colour filter with for sense blue light pixel unit,
Pixel unit for sensing green light, and/or the pixel unit for sensing feux rouges match.
12. the imaging sensor according to 1, which is characterized in that the infrared light is near infrared light.
13. the imaging sensor according to 1, which is characterized in that first semi-conducting material is silicon, described the second half
Conductor material is germanium silicon.
14. a kind of method forming imaging sensor, which is characterized in that including：
Form the second photodiode for converting infrared light and the first photodiode for converting visible light, institute
It includes the first semi-conducting material to state the first photodiode, and second photodiode includes the second semi-conducting material, wherein
First photodiode and second photodiode are in the major surfaces in parallel with described image sensor
Plan view in it is least partially overlapped；And
First photodiode is than second photodiode closer to described image sensor for receiving
The upper surface of light.
15. the method according to 14, which is characterized in that the band gap of first semi-conducting material is more than described second
The band gap of semi-conducting material.
16. the method according to 14, which is characterized in that form second photodiode and first photoelectricity two
Pole pipe includes：
It is formed by described the second half in the lower surface of the first semiconductor material layer formed by first semi-conducting material
The second semiconductor material layer that conductor material is formed；
The second PN junction is formed in second semiconductor material layer and is formed in first semiconductor material layer
One PN junction.
17. the method according to 16, which is characterized in that forming second PN junction includes：
From the lower surface of second semiconductor material layer, into second semiconductor material layer of the second conduction type
The dopant for injecting the first conduction type, to form second PN junction.
18. the method according to 16, which is characterized in that forming first PN junction includes：
From the upper surface of first semiconductor material layer, into first semiconductor material layer of the first conduction type
The dopant for injecting the second conduction type, to form first PN junction.
19. the method according to 14, which is characterized in that first photodiode with the major surfaces in parallel
There is the not protrusion Chong Die with second photodiode on direction.
20. the method according to 19, which is characterized in that the lower surface of the protrusion and two pole of the second photoelectricity
Depth of the lower surface of pipe on the direction vertical with the main surface is identical.
21. the method according to 16, which is characterized in that further include：
After forming second semiconductor material layer, is formed and is electrically isolated structure,
Wherein, the electric isolution structure is formed by dielectric substance and is located at first photodiode and described second
Between photodiode.
22. the method according to 21, which is characterized in that forming the electric isolution structure includes：
Between the lower surface of first photodiode and the upper surface of second photodiode, described in formation
It is electrically isolated the first part of structure.
23. the method according to 22, which is characterized in that forming the electric isolution structure further includes：
Between first photodiode and the side surface of second photodiode, the electric isolution knot is formed
The second part of structure.
24. the method according to 22, which is characterized in that the first part by first semi-conducting material oxidation
The oxide of object and/or second semi-conducting material is formed.
25. the method according to 22, which is characterized in that forming the first part includes：
Oxonium ion is injected from the lower surface of second semiconductor material layer, under first photodiode
Between surface and the upper surface of second photodiode, the oxide by first semi-conducting material and/or institute are formed
State the first part that the oxide of the second semi-conducting material is formed.
26. the method according to 25, which is characterized in that the processing of the injection oxonium ion is to form the 2nd PN
What knot carried out before.
27. the method according to 14, which is characterized in that form second photodiode and first photoelectricity two
Pole pipe includes：
It is formed in a pixel unit and is co-located at second photodiode in the pixel unit and described
First photodiode, wherein the pixel unit is for sensing visible light.
28. the method according to 14, which is characterized in that form second photodiode and first photoelectricity two
Pole pipe includes：
Second photodiode and described first being co-located in the pixel unit is formed in pixel unit
Photodiode, wherein the pixel unit includes following at least one：For sensing the pixel unit of blue light, for sensing
The pixel unit of green light and pixel unit for sensing feux rouges.
29. the method according to 14, which is characterized in that further include：
Colour filter is formed on first photodiode,
Wherein, the colour filter with for sense the pixel unit of blue light, the pixel unit for sensing green light, and/or
Pixel unit for sensing feux rouges matches.
30. the method according to 14, which is characterized in that the infrared light is near infrared light.
31. the method according to 14, which is characterized in that first semi-conducting material is silicon, second semiconductor
Material is germanium silicon.
32. according to the method described in 17 or 18, which is characterized in that first conduction type is p-type, and described second is conductive
Type is N-type.
Although some specific embodiments of the disclosure are described in detail by example, the skill of this field
Art personnel it should be understood that above example merely to illustrate, rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out without departing from the scope and spirit of the disclosure to embodiment.The scope of the present disclosure is limited by appended claims
It is fixed.
Claims (10)
1. a kind of imaging sensor, which is characterized in that including：
First photodiode, for converting visible light, first photodiode includes the first semi-conducting material；And
Second photodiode, for converting infrared light, second photodiode includes the second semi-conducting material, wherein
First photodiode and second photodiode are in the flat of the major surfaces in parallel with described image sensor
It is least partially overlapped in the figure of face；And
First photodiode is than second photodiode closer to described image sensor for receiving light
Upper surface.
2. imaging sensor according to claim 1, which is characterized in that the band gap of first semi-conducting material is more than
The band gap of second semi-conducting material.
3. imaging sensor according to claim 1, which is characterized in that first photodiode with the main table
There is the not protrusion Chong Die with second photodiode on the parallel direction in face.
4. imaging sensor according to claim 3, which is characterized in that the lower surface of the protrusion and described second
Depth of the lower surface of photodiode on the direction vertical with the main surface is identical.
5. imaging sensor according to claim 1, which is characterized in that further include：
It is electrically isolated structure, between first photodiode and second photodiode, the electric isolution structure
It is formed by dielectric substance.
6. imaging sensor according to claim 5, which is characterized in that the electric isolution structure includes being located at described first
First part between the lower surface of photodiode and the upper surface of second photodiode.
7. imaging sensor according to claim 6, which is characterized in that the electric isolution structure further includes being located at described the
Second part between one photodiode and the side surface of second photodiode.
8. imaging sensor according to claim 6, which is characterized in that the first part is by the first semiconductor material
The oxide of the oxide of material and/or second semi-conducting material is formed.
9. imaging sensor according to claim 1, which is characterized in that first photodiode and second light
Electric diode is co-located in a pixel unit, wherein the pixel unit is for sensing visible light.
10. imaging sensor according to claim 1, which is characterized in that first photodiode and described second
Photodiode be co-located at it is following it is at least one in：Pixel unit for sensing blue light, the pixel list for sensing green light
Member and the pixel unit for sensing feux rouges.
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| CN1828947A (en) * | 2005-03-04 | 2006-09-06 | 中芯国际集成电路制造(上海)有限公司 | Photodiode and its preparing method and application in CMOS image sensor |
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| CN104979365A (en) * | 2014-04-10 | 2015-10-14 | 全视科技有限公司 | IMAGE SENSOR pixel and the image sensor |
| CN206322694U (en) * | 2016-01-20 | 2017-07-11 | 半导体元件工业有限责任公司 | The array and system of image sensor pixel |
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| CN1828947A (en) * | 2005-03-04 | 2006-09-06 | 中芯国际集成电路制造(上海)有限公司 | Photodiode and its preparing method and application in CMOS image sensor |
| CN102326257A (en) * | 2009-02-20 | 2012-01-18 | 国立大学法人京都工芸纤维大学 | Light absorbing material and use the photo-electric conversion element of this light absorbing material |
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