CN108447845A - A kind of power semiconductor modular substrate and power semiconductor modular - Google Patents
A kind of power semiconductor modular substrate and power semiconductor modular Download PDFInfo
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- CN108447845A CN108447845A CN201810491127.6A CN201810491127A CN108447845A CN 108447845 A CN108447845 A CN 108447845A CN 201810491127 A CN201810491127 A CN 201810491127A CN 108447845 A CN108447845 A CN 108447845A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 100
- 239000000758 substrate Substances 0.000 title claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 243
- 229910052751 metal Inorganic materials 0.000 claims abstract description 243
- 239000011248 coating agent Substances 0.000 claims abstract description 144
- 238000000576 coating method Methods 0.000 claims abstract description 144
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 13
- 238000009413 insulation Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
- H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Automation & Control Theory (AREA)
- Power Conversion In General (AREA)
Abstract
The invention discloses a kind of power semiconductor modular substrate and power semiconductor modulars.The power semiconductor modular substrate of the present invention, including the first metal backing, the second metal backing, third metal backing, the 4th metal backing and fifth metal coating；Wherein, 4th metal backing is equipped with the first partition-type structures, the 4th metal backing is set to be divided into the first coating unit and the second coating unit, the first partition-type structures are equipped with the first current sensor, and the first current sensor connects the first coating unit and the second coating unit；Fifth metal coating is equipped with the second partition-type structures, and fifth metal coating is made to be divided into third coating unit and the 4th coating unit, and the second partition-type structures are equipped with the second current sensor, and the second current sensor point connects third coating unit and the 4th coating unit.The power semiconductor modular substrate and power semiconductor modular of the present invention, can directly on power semiconductor modular substrate integrated current sensors, it is simple in structure, manufacturing cost is relatively low.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of power semiconductor modular substrates and power semiconductor mould
Block.
Background technology
The operating current of power semiconductor modular under operating conditions is limited, when actual current exceeds rated current, holds
The chip over-temperature failure inside power semiconductor modular is easily led to, the normal operation of power semiconductor modular is influenced.Therefore, in work(
When rate semiconductor module is in running order, to ensure its reliability of operation, need to carry out current detecting to it.
Since the thermal time constant of the semiconductor chip in power semiconductor modular is small, temperature change is fast, fast and accurately
Current detecting is carried out for realizing that the effective protection of power semiconductor modular is particularly significant to power semiconductor modular.
In order to reduce the volume for the system for applying power semiconductor modular, power density is improved so as to fit new energy vapour
Current sensor for detecting electric current can be integrated in power by vehicle etc. to integrated level and the higher application field of volume requirement
Inside semiconductor module.But the existing method for being internally integrated current sensor in power semiconductor modular, it often need to be in work(
Increase additional shunting or flow-guiding structure on the substrate or power terminal of rate semiconductor module, leads to the system of power semiconductor modular
Complex process is made, and improves the manufacturing cost of power semiconductor modular.
Therefore, complicated for the manufacturing process of the existing power semiconductor modular for being integrated with current sensor, be manufactured into
A kind of this higher problem, it is desirable to provide simple in structure, lower-cost power semiconductor modular.
Invention content
To solve the above problems, a kind of power semiconductor modular substrate of present invention offer and power semiconductor modular, it can
Current sensor, structure letter are directly set on the 4th metal backing and fifth metal coating for providing access for power current
List, manufacturing cost are relatively low.
To achieve the above object, the present invention provides a kind of power semiconductor modular substrates, including the first metal backing,
Two metal backings, third metal backing, the 4th metal backing and fifth metal coating, the first metal backing, the second metal backing
It is sequentially connected with third metal backing, the 4th metal backing and fifth metal coating are connect with the first metal backing respectively；Wherein,
4th metal backing is equipped with the first partition-type structures, so that the 4th metal backing is divided into the first coating unit and second and applies
Layer unit, the first partition-type structures are equipped with the first current sensor, and the first current sensor applies the first coating unit and second
Layer unit connects；Fifth metal coating is equipped with the second partition-type structures, and fifth metal coating is made to be divided into third coating unit and the
Four coating units, the second partition-type structures are equipped with the second current sensor, the second current sensor point by third coating unit and
4th coating unit connects.
Further, the first metal backing is connected as one with the 4th metal backing, fifth metal coating, the first gold medal
Belong to coating to connect by attachment device respectively with third metal backing with the second metal backing, the second metal backing.
Further, third metal backing is equipped with the cathode power terminal pin for cathode power current to be connected, the
The positive power terminal pin of the positive power current of conducting is respectively provided on four metal backings and fifth metal coating.
Further, the second metal backing is connected as one with third metal backing, the first metal backing and the 4th
Metal backing, the first metal backing are filled by connecting with fifth metal coating, the first metal backing with the second metal backing respectively
Set connection.
Further, third metal backing is equipped with the positive power terminal pin for positive power current to be connected, the
The cathode power terminal pin of conducting cathode power current is respectively provided on four metal backings and fifth metal coating.
Further, the first current sensor is equipped with a pair of first signal terminal, one in the first signal terminal and the
One coating unit connects, another in the first signal terminal is connect with the second coating unit；Second current sensor is equipped with one
To second signal terminal, one in second signal terminal connect with third coating unit, another in second signal terminal
It is connect with the 4th coating unit.
Further, the spacing of the first signal terminal and the first current sensor, second signal terminal and the second electric current pass
The spacing of sensor is respectively smaller than 3mm.
The present invention also provides a kind of power semiconductor modulars, including above-mentioned power semiconductor modular substrate.
Further, the first metal backing is connected as one with the 4th metal backing, fifth metal coating, and is pacified
Fill the first power semiconductor chip；Second power semiconductor chip is installed on the second metal backing；Second metal backing passes through company
Connection device is connect with the first power electrode of the first power semiconductor chip；Third metal backing passes through attachment device and the second work(
Second power electrode of rate semiconductor chip connects.
Further, the first power semiconductor chip is installed on the first metal backing；Second metal backing and third metal
Coating is connected as one, and installs the second power semiconductor chip；4th metal backing, fifth metal coating lead to respectively
Attachment device is crossed to connect with the first power electrode of the first power semiconductor chip；First metal backing passes through attachment device and the
Second power electrode of two power semiconductor chips connects.
The power semiconductor modular substrate and power semiconductor modular of the present invention, is directly providing access for power current
The 4th metal backing on setting the 4th metal backing can be divided into two-part first partition-type structures, be carried for power current
Fifth metal coating can be divided into two-part second partition-type structures for setting on the fifth metal coating of access, and first
Be arranged in partition-type structures and the second partition-type structures the first current sensor being connect respectively with the 4th metal backing of two parts and with
Second current sensor of two parts fifth metal coating connection, the current sensor for being used for current detecting is directly integrated in
In power semiconductor modular, without increasing complicated shunting or flow-guiding structure, compared with prior art, power of the invention half
Conductor module substrate and power semiconductor modular is simple in structure and manufacturing cost is low.
Description of the drawings
Fig. 1 is the metal backing arrangement schematic diagram of the power semiconductor modular substrate of the embodiment of the present invention；
Fig. 2 is the attachment structure schematic diagram of the metal backing of one embodiment of the invention；
Fig. 3 is the attachment structure schematic diagram of the metal backing of another embodiment of the present invention；
Fig. 4 is the attachment structure schematic diagram of the metal backing and power semiconductor chip of one embodiment of the invention；
Fig. 5 is the equivalent circuit diagram of embodiment illustrated in fig. 4；
Fig. 6 is the attachment structure schematic diagram of the metal backing and power semiconductor chip of another embodiment of the present invention；
Fig. 7 is the equivalent circuit diagram of embodiment described in Fig. 6.
Specific implementation mode
In the following, in conjunction with attached drawing, structure and operation principle to the present invention etc. are further described.
A kind of power semiconductor modular substrate of the embodiment of the present invention, including the first metal backing, the second metal backing,
Three metal backings, the 4th metal backing and fifth metal coating.Wherein, the first metal backing, the second metal backing and third gold
Belong to coating to be sequentially connected, the 4th metal backing and fifth metal coating are connect with the first metal backing respectively.
In embodiments of the present invention, the layout of multiple metal backings is as shown in Figure 1, the first metal backing 1, the second metal apply
Layer 2, third metal backing 3 are arranged parallel to, and the 4th metal backing 4 and fifth metal coating 5 are elongate configuration, are arranged in the
The both sides of one metal backing 1, the second metal backing 2 and third metal backing 3, and the 4th metal backing 4 and fifth metal are applied
Layer 5 is arranged along perpendicular to the direction of the first metal backing 1, the second metal backing 2 and third metal backing 3.In this layout
All power currents can be connected in 4th metal backing 4 and fifth metal coating 5, convenient for being directly integrated installation current sensor.
As Figure 2-3, in embodiments of the present invention, the 4th metal backing 4 be equipped with the first partition-type structures 7, first every
Disconnected structure 7 can divide the 4th metal backing 4 for two parts, i.e. the 4th metal backing 4 is divided into the first coating unit 18 and the
Two coating units 19, insulation set between the first coating unit 18 and the second coating unit 19.First partition-type structures 7 are equipped with the
One current sensor 8, the first current sensor 8 connect the first coating unit 18 and the second coating unit 19, make two parts
Four metal backings 4 are connected.Fifth metal coating 5 is equipped with the second partition-type structures 10, and the second partition-type structures 10 can be by hardware
Belong to coating 5 to divide for two parts, i.e., fifth metal coating 5 is divided into third coating unit 20 and the 4th coating unit 21, and third is applied
Insulation set between layer unit 20 and the 4th coating unit 21.Second partition-type structures 10 are equipped with the second current sensor 11, the
Two current sensors 11 connect third coating unit 20 and the 4th coating unit 21, and two parts fifth metal coating 5 is made to be connected.
Therefore, the power semiconductor modular substrate of the embodiment of the present invention, can be by the current sensor for current detecting
It is directly integrated in power semiconductor modular, without increasing complicated shunting or flow-guiding structure, compared with prior art, this hair
Bright power semiconductor modular substrate and power semiconductor modular is simple in structure and manufacturing cost is low.
In embodiments of the present invention, the first current sensor 8 can be equipped with a pair of first signal terminal 9, the first signal end
One in son 9 connect with the first coating unit 18, another in the first signal terminal 9 is connect with the second coating unit 19.
Second current sensor 11 is equipped with a pair of of second signal terminal 12, one in second signal terminal 12 and institute's third coating unit
20 connect, another in second signal terminal 12 is connect with the 4th coating unit 21.In order to reduce the first current sensor 8,
The resistance of second current sensor 11 and the interference to current signal, between the first signal terminal 9 and the first current sensor 8
Spacing away from, second signal terminal 12 and the second current sensor 11 is respectively smaller than 3mm.
In embodiments of the present invention, the first current sensor 8, the second current sensor 11 can be respectively small resistance value electricity
Resistance has the advantages that bandwidth is high, speed is fast, it is accurate to measure.
In order to meet the connection demand of different power semiconductor modulars, the power semiconductor mould of the embodiment of the present invention
Multiple metal backings of block substrate can specifically have following two connection structures：
Fig. 2 is the attachment structure schematic diagram of the metal backing of one embodiment of the invention.
As shown in Fig. 2, the first coating unit 18, the fifth metal coating 5 of the first metal backing 1 and the 4th metal backing 4
Three coating units be connected as one, so that the first metal backing 1, the 4th metal backing 4 and fifth metal coating 5 is formed the
One potential area 6.First metal backing 1 and the second metal backing 2, the second metal backing 2 pass through company respectively with third metal backing 3
Connection device is electrically connected.
In the embodiment depicted in figure 2,13 pin of power terminal of conducting power electric current can be divided into equal two groups of quantity,
One group is arranged on the 4th metal backing 4 and fifth metal coating 5, and another group is arranged on third metal backing 3.Specifically,
The cathode power terminal pin for cathode power current to be connected can be equipped on third metal backing 3, the 4th metal backing 4
The positive power electricity of conducting can be respectively provided on 4th coating unit 21 of the second coating unit 19 and fifth metal coating 5
The positive power terminal pin of stream, positive power terminal pin mean allocation is in the 4th metal backing 4 and fifth metal coating 5
On, i.e. positive power on the second coating unit 19 of the 4th metal backing 4 and the 4th coating unit 21 of fifth metal coating 5
The quantity of terminal pins is identical.
Fig. 3 is the attachment structure schematic diagram of the metal backing of another embodiment of the present invention.
As shown in figure 3, the second metal backing 2 is connected as one with third metal backing 3, make the second metal backing 2
The second potential area 14 is formed with third metal backing 3.First coating unit 18 of the first metal backing 1 and the 4th metal backing 4,
Three coating units, the first metal backing 1 of first metal backing 1 and fifth metal coating 5 pass through respectively with the second metal backing 2
Attachment device connects.
In the embodiment shown in fig. 3,13 pin of power terminal of conducting power electric current can be divided into equal two groups of quantity,
It is another on 4th coating unit 21 of one group of second coating unit 19 for being arranged in the 4th metal backing 4 and fifth metal coating 5
Group is arranged on third metal backing 3.Specifically, it can be equipped with for positive power current to be connected on third metal backing 3
Positive power terminal pin can be respectively provided with conducting cathode power electricity on the 4th metal backing 4 and fifth metal coating 5
The cathode power terminal pin of stream, cathode power terminal pin mean allocation is in the 4th metal backing 4 and fifth metal coating 5
On, i.e. cathode power on the second coating unit 19 of the 4th metal backing 4 and the 4th coating unit 21 of fifth metal coating 5
The quantity of terminal pins is identical.
The embodiment of the present invention additionally provides a kind of power semiconductor modular, includes the power semiconductor mould of the embodiment of the present invention
Block substrate.Power semiconductor modular substrate, including the first metal backing 1, the second metal backing 2, third metal backing the 3, the 4th
Metal backing 4 and fifth metal coating 5.Wherein, the first power semiconductor chip 15 is equipped on the first metal backing 1, the
Two metal backings 2 are equipped with the second power semiconductor chip 16.First metal backing 1, the second metal backing 2 and third metal apply
Layer 3 is sequentially connected, and the 4th metal backing 4 and fifth metal coating 5 are connect with the first metal backing 1 respectively.
In embodiments of the present invention, the 4th metal backing 4 is equipped with the first partition-type structures 7, and the first partition-type structures 7 can incite somebody to action
4th metal backing 4 divides for two parts, i.e. the 4th metal backing 4 is divided into the first coating unit 18 and the second coating unit 19,
Insulation set between first coating unit 18 and the second coating unit 19.First partition-type structures 7 are equipped with the first current sensor
8, the first current sensor 8 connects the first coating unit 18 and the second coating unit 19, and the 4th metal backing 4 of two parts is made to lead
It is logical.Fifth metal coating 5 is equipped with the second partition-type structures 10, and it is two that fifth metal coating 5 can be divided to by the second partition-type structures 10
Part, i.e. fifth metal coating 5 are divided into third coating unit 20 and the 4th coating unit 21, third coating unit 20 and the 4th
Insulation set between coating unit 21.Second partition-type structures 10 are equipped with the second current sensor 11, the second current sensor 11
Third coating unit 20 and the 4th coating unit 21 are connected, two parts fifth metal coating 5 is made to be connected.
Fig. 4 is the attachment structure schematic diagram of the metal backing and power semiconductor chip of one embodiment of the invention.
As shown in figure 4, the first coating unit 18, the fifth metal coating 5 of the first metal backing 1 and the 4th metal backing 4
Three coating units be connected as one, so that the first metal backing 1, the 4th metal backing 4 and fifth metal coating 5 is formed the
One potential area 6, and first power semiconductor chip 15 is installed in the first potential area 6.Second work(is installed on second metal backing 2
Rate semiconductor chip 16.Second metal backing 2 pass through the upper surface of attachment device 17 and the first power semiconductor chip 15
One power electrode connects, third metal backing 3 pass through the upper surface of attachment device 17 and the second power semiconductor chip 16 the
Two power electrodes connect.13 pin of power terminal of conducting power electric current can be divided into equal two groups of quantity, and one group is arranged in
On second coating unit 19 of the 4th metal backing 4 and the 4th coating unit 21 of fifth metal coating 5, another group is arranged in
On three metal backings 3.Specifically, the positive power terminal pin arrangement of positive power current is connected in the 4th metal backing 4
On 4th coating unit 21 of the second coating unit 19 and fifth metal coating 5, the cathode power end of cathode power current is connected
Sub- pin arrangement is on third metal backing 3.
Such as the equivalent circuit diagram that Fig. 5 is embodiment illustrated in fig. 4.Wherein, first resistor R1 is the interior of the first current sensor 8
Resistance, second resistance R2 are the internal resistance of the second current sensor 11, simultaneously due to the first current sensor 8 and the second current sensor 11
Connection setting, therefore, first resistor R1 and second resistance R2 in equivalent circuit are connected in parallel.The first transistor T1 is the first power
Semiconductor chip 15, second transistor T2 are the first power semiconductor chip 16, the first transistor T1 and second transistor T2 groups
At half-bridge structure, and the first transistor T1 is connected by first resistor R1 and second resistance R2 in parallel and positive power current
It connects, second transistor T2 is connect with cathode power current.At this point, being equal to by the by the electric current of upper bridge arm the first transistor T1
The sum of the electric current of one resistance R1 and second resistance R2 therefore can be by measuring the first current sensor 8 and the second current sensor
The electric current that 11 Current calculation passes through the first power semiconductor chip of upper bridge arm 15.
Fig. 6 is the attachment structure schematic diagram of the metal backing and power semiconductor chip of another embodiment of the present invention.
As shown in fig. 6, installing 15. second metal backing 2 of the first power semiconductor chip and third on the first metal backing 1
Metal backing 3 is connected as one, and the second metal backing 2 and third metal backing 3 is made to form the second potential area 14, and
Second potential area 14 is installed by the second power semiconductor chip 16.First coating unit 18 of the 4th metal backing 4, fifth metal are applied
Three coating units of layer 5 pass through the first power electrode of attachment device 17 and the upper surface of the first power semiconductor chip 15 respectively
Connection, the second power electrode that the first metal backing 1 passes through attachment device 17 and the upper surface of the second power semiconductor chip 16
Connection.13 pin of power terminal of conducting power electric current can be divided into equal two groups of quantity, and one group is arranged in the 4th metal and applies
On second coating unit 19 of layer 4 and the 4th coating unit 21 of fifth metal coating 5, another group is arranged in third metal backing
On 3.Specifically, the positive power terminal pin arrangement of positive power current is connected on third metal backing 3, cathode work(is connected
The cathode power terminal pin arrangement of rate electric current is in the second coating unit 19 and fifth metal coating 5 of the 4th metal backing 4
On 4th coating unit 21.
Such as the equivalent circuit diagram that Fig. 7 is embodiment illustrated in fig. 6.Wherein, first resistor R1 is the interior of the first current sensor 8
Resistance, second resistance R2 are the internal resistance of the second current sensor 11, simultaneously due to the first current sensor 8 and the second current sensor 11
Connection setting, therefore, first resistor R1 and second resistance R2 in equivalent circuit are connected in parallel.The first transistor T1 is the first power
Semiconductor chip 15, second transistor T2 are the first power semiconductor chip 16, the first transistor T1 and second transistor T2 groups
At half-bridge structure, and the first transistor T1 is connected by first resistor R1 and second resistance R2 in parallel with cathode power current
It connects, second transistor T2 is connect with positive power current.At this point, being equal to by the by the electric current of lower bridge arm the first transistor T1
The sum of the electric current of one resistance R1 and second resistance R2 therefore can be by measuring the first current sensor 8 and the second current sensor
The electric current that 11 Current calculation passes through the first power semiconductor chip of lower bridge arm 15.
In conclusion the power semiconductor modular substrate and power semiconductor modular of the embodiment of the present invention, can be in work(
It is directly integrated current sensor in rate semiconductor module substrate, without increasing complicated shunting on power semiconductor modular substrate
Or flow-guiding structure, manufacturing method is simple, and manufacturing cost is low.Also, due to the power semiconductor modular substrate of the embodiment of the present invention
And power semiconductor modular using small valued resistor as current sensor, also have that bandwidth is high, speed is fast, it is accurately excellent to measure
Point.
More than, schematic description only of the invention, it will be recognized by those skilled in the art that in the work without departing from the present invention
On the basis of making principle, a variety of improvement can be made to the present invention, this is all belonged to the scope of protection of the present invention.
Claims (10)
1. a kind of power semiconductor modular substrate, which is characterized in that including the first metal backing, the second metal backing, third gold
Belong to coating, the 4th metal backing and fifth metal coating, first metal backing, second metal backing and the third
Metal backing is sequentially connected, and the 4th metal backing and the fifth metal coating connect with first metal backing respectively
It connects；Wherein,
4th metal backing is equipped with the first partition-type structures, and the 4th metal backing is made to be divided into the first coating unit and the
Two coating units, first partition-type structures are equipped with the first current sensor, and first current sensor is by described first
Coating unit is connected with the second coating unit；The fifth metal coating is equipped with the second partition-type structures, makes the described 5th
Metal backing is divided into third coating unit and the 4th coating unit, and second partition-type structures are equipped with the second current sensor,
Second current sensor point connects the third coating unit with the 4th coating unit.
2. power semiconductor modular substrate as described in claim 1, which is characterized in that first metal backing and described the
Four metal backings, the fifth metal coating are connected as one, first metal backing and second metal backing,
Second metal backing is connect by attachment device respectively with the third metal backing.
3. power semiconductor modular substrate as claimed in claim 2, which is characterized in that the third metal backing, which is equipped with, to be used
In the cathode power terminal pin of conducting cathode power current, on the 4th metal backing and the fifth metal coating respectively
Equipped with the positive power terminal pin for positive power current to be connected.
4. power semiconductor modular substrate as described in claim 1, which is characterized in that second metal backing and described the
Three metal backings are connected as one, first metal backing and the 4th metal backing, first metal backing
It is connect respectively by attachment device with second metal backing with the fifth metal coating, first metal backing.
5. power semiconductor modular substrate as claimed in claim 4, which is characterized in that the third metal backing, which is equipped with, to be used
Distinguish on the positive power terminal pin of the positive power current of conducting, the 4th metal backing and the fifth metal coating
Equipped with the cathode power terminal pin for cathode power current to be connected.
6. power semiconductor modular substrate as described in claim 1, which is characterized in that first current sensor is equipped with one
To the first signal terminal, one in first signal terminal connect with the first coating unit, first signal end
Another in son is connect with the second coating unit；Second current sensor is equipped with a pair of of second signal terminal, institute
One in second signal terminal is stated to connect with the third coating unit, in the second signal terminal another with it is described
4th coating unit connects.
7. power semiconductor modular substrate as claimed in claim 6, which is characterized in that first signal terminal and described the
The spacing of one current sensor, the spacing of the second signal terminal and second current sensor are respectively smaller than 3mm.
8. a kind of power semiconductor modular, which is characterized in that including claim 1-7 any one of them power semiconductor modulars
Substrate.
9. power semiconductor modular as claimed in claim 8, which is characterized in that first metal backing and the 4th gold medal
Category coating, the fifth metal coating are connected as one, and install the first power semiconductor chip；Second metal
Second power semiconductor chip is installed on coating；Second metal backing passes through the attachment device and first power half
First power electrode of conductor chip connects；The third metal backing is partly led by the attachment device and second power
Second power electrode of body chip connects.
10. power semiconductor modular as claimed in claim 8, which is characterized in that install first on first metal backing
Power semiconductor chip；Second metal backing is connected as one with the third metal backing, and installs second
Power semiconductor chip；4th metal backing, the fifth metal coating pass through the attachment device and described the respectively
First power electrode of one power semiconductor chip connects；First metal backing passes through the attachment device and described second
Second power electrode of power semiconductor chip connects.
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| CN201810491127.6A CN108447845A (en) | 2018-05-21 | 2018-05-21 | A kind of power semiconductor modular substrate and power semiconductor modular |
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| CN201810491127.6A CN108447845A (en) | 2018-05-21 | 2018-05-21 | A kind of power semiconductor modular substrate and power semiconductor modular |
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