CN108428984A - The bandpass filter of resonant cavity is integrated based on right angled triangle substrate - Google Patents
The bandpass filter of resonant cavity is integrated based on right angled triangle substrate Download PDFInfo
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- CN108428984A CN108428984A CN201810213071.8A CN201810213071A CN108428984A CN 108428984 A CN108428984 A CN 108428984A CN 201810213071 A CN201810213071 A CN 201810213071A CN 108428984 A CN108428984 A CN 108428984A
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- resonant cavity
- bandpass filter
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- angled triangle
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/212—Frequency-selective devices, e.g. filters suppressing or attenuating harmonic frequencies
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Abstract
Invention is related to integrating the bandpass filter of resonant cavity based on right angled triangle substrate, including the diamond shape resonant cavity that upper surface metal layer, dielectric substrate and the lower surface metal earth plate from top to bottom stacked gradually is constituted;Several cylinder type metal through-holes are placed with along the four edges edge of the dielectric substrate and its two diagonal lines, diamond shape resonant cavity is divided into the resonant cavity of four groups of rectangular triangles by cylinder type metal through-hole;Upper surface metal layer between first, fourth resonant cavity is equipped with S-type fluting;The first microstrip transmission line and the second microstrip transmission line are connected separately on the triangle base of first, fourth resonant cavity.It is two passes that the present invention, which expands the filter of script single current channel, forms a filter with transmission zero, can effectively inhibit out-of-band harmonics.Structure of the invention is compact, superior performance, and contains transmission zero, meets the miniaturization of Modern wireless communication, high performance requirement.
Description
Technical field
The present invention relates to a kind of bandpass filter, especially a kind of band logical integrating resonant cavity based on right angled triangle substrate
Filter belongs to wireless communication technology field.
Background technology
With the development of modern microwave communication system, communication device towards high-performance, low-loss, send out simultaneously by miniaturization
Exhibition.And in recent years, substrate integration wave-guide(SIW:Substrate Integrated Waveguide)Because of its high quality factor, low
Loss, size is small, can run the features such as high power capacity, becomes research hotspot.In over the past several decades, about various
The lot of documents of substrate integral wave guide filter emerges one after another.Traditional substrate integrated waveguide technology, such as rectangle, circular substrate
The researchers such as integrated waveguide are a lot of.However the research about triangle substrate integral waveguide is also very insufficient.Simultaneously at present about carrying
In the research for rising communication device performance, generally using cascade and folding etc., but size is too big, not easy of integration.Triangle
Substrate integration wave-guide has more wide hair because its is compact-sized, is easy to the characteristics of layout in microwave integrated circuit system
Exhibition foreground, it would be highly desirable to further research and development.
Invention content
It is an object of the invention to:In view of the defects existing in the prior art, it proposes a kind of based on right angled triangle substrate collection
At the bandpass filter of resonant cavity, by the negative-feedback between resonant cavity, it is by the filter expansion of script single current channel
Two passes form a filter with transmission zero, can effectively inhibit out-of-band harmonics.
In order to reach object above, the present invention provides a kind of band logical filters integrating resonant cavity based on right angled triangle substrate
Wave device, including diamond shape that the upper surface metal layer, dielectric substrate and the lower surface metal earth plate that from top to bottom stack gradually are constituted
Resonant cavity;Several cylinder type metal through-holes are placed with along the four edges edge of the dielectric substrate and its two diagonal lines, are passed through
Diamond shape resonant cavity is divided into the resonant cavity of four groups of rectangular triangles by cylinder type metal through-hole;
First resonant cavity is equal with the triangle area of third resonant cavity, the triangle of the second resonant cavity and the 4th resonant cavity
Area equation, and the area of second, four resonant cavities is simultaneously greater than the area of the first and third resonant cavity;
Upper surface metal layer between first, fourth resonant cavity is equipped with S-type fluting;First, fourth resonant cavity
The first microstrip transmission line and the second microstrip transmission line are connected separately on triangle base, first and second microstrip transmission line
Characteristic impedance is 50 ohm.
The present invention the technical characteristic that further limits be:First, second, third, fourth resonant cavity is respectively with its phase
Adjacent right-angle surface is coupling surface, and coupling two-by-two forms a diamond shape resonant cavity.And first and second described resonant cavity, second and
It is coupled as magnetic coupling between three resonant cavities, third and the 4th resonant cavity;First and the 4th is coupled as thermocouple between resonant cavity
It closes.
Further, the minimum angles of the right angled triangle of four groups of resonant cavities are 30 °.
Further, there are one section of magnetic coupling windows for the cylinder type metal through-hole arrangement between first and second resonant cavity
Mouthful gap, cylinder type metal through-hole arrangement between second and third resonant cavity is there are the gap of one section of magnetic coupling window, the
Three, the cylinder type metal through-hole arrangement between four resonant cavities is there are the gap of one section of magnetic coupling window, the first, fourth resonant cavity it
Between the arrangement of cylinder type metal through-hole there are one section of gap, the upper surface metal layer in the gap is equipped with S-type open
Slot.
Further, the connecting place of first and second microstrip transmission line and the first, fourth resonant cavity is logical without cylinder type metalization
Hole.
Further, the junction of first microstrip transmission line and the first resonant cavity is provided with stria to form co-planar waveguide
Transition structure;The junction of second microstrip transmission line and the 4th resonant cavity is provided with stria to form co-planar waveguide transition knot
Structure.
Further, for the dielectric substrate lower surface metal layer as metal ground plate, the metal ground plate covering is whole
A dielectric substrate lower surface.
The present invention has the following technical effects using above technical scheme is compared with the prior art:
(1)The present invention using rhombic inner four right angled triangle resonant cavities intercoupling between any two, by each cavity
Corresponding different equivalent combination of resonant frequencies is got up, and constitutes a filter, and widened the free transmission range of the filter.
(2)The present invention utilizes the metal throuth hole gap in first and the 4th between resonant cavity to introduce S-shaped stria, that is, introduces two
Negative-feedback between a resonant cavity, it is two passes to make to expand in the filter of script single current channel(One two three four chamber
Body route and the one or four cavity route), formed at a high and low frequency outside passband has the filtering of transmission zero simultaneously
Device can effectively inhibit out-of-band harmonics, improve out-band performance.
(3)Primary structure of the present invention is exactly that four right angled triangle resonant cavities are constituted a complete diamond shape resonant cavity
Body, it is simple and compact for structure, it is easy to process.
Description of the drawings
The present invention will be further described below with reference to the drawings.
Fig. 1 is the three-dimensional layered structure schematic diagram of the present invention.
Fig. 2 is the vertical view of the present invention.
Fig. 3 is the structural schematic diagram that S types are slotted in the present invention.
Fig. 4 is S parameter simulation waveform in the present invention.
Label declaration:The upper surfaces 1- metal layer, 2- dielectric substrates, 3- lower surface metal earth plates, 4- microstrip transmission lines, 5-
Co-planar waveguide transition structure, 6- cylinder type metal through-holes, 7-S types fluting, the first resonant cavities of 8-, the second resonant cavities of 9-, 10- the
Three resonant cavities, the 4th resonant cavities of 11-.
Specific implementation mode
Present embodiments provide a kind of bandpass filter integrating resonant cavity based on right angled triangle substrate, structure such as Fig. 1
Shown in Fig. 3, including the upper surface metal layer, dielectric substrate and the lower surface metal earth plate that from top to bottom stack gradually are constituted
Diamond shape resonant cavity.
Wherein, several cylinder type metalizations are placed with along the four edges of dielectric substrate edge and its two diagonal lines to lead to
Diamond shape resonant cavity is divided into the resonant cavity of four groups of rectangular triangles by cylinder type metal through-hole by hole;They include
Upper surface metal layer, dielectric substrate and lower surface metal earth plate from top to bottom.
As shown in Fig. 2, the triangle that three row plated-through holes surround on the first resonant cavity and third resonant cavity dielectric substrate
The triangle area that three row plated-through holes surround on area equation, the second resonant cavity and the 4th resonant cavity dielectric substrate is mutually equivalent
When the triangle that is surrounded more than three row plated-through holes on other two chambers dielectric substrates.Described first, second, third, fourth is humorous
Chamber shake respectively using its adjacent right-angle surface as coupling surface, coupling two-by-two forms a rhombus mask.The first, the 4th resonant cavity it
Between metal throuth hole arrangement there are one section of gap, in the gap, upper metal layers open that there are one S type strias.First, second is humorous
The metal throuth hole arrangement shaken between chamber is there are the gap of one section of magnetic coupling window, the metal throuth hole between second, third resonant cavity
There are the gaps of one section of magnetic coupling window for arrangement, and there are one section of magnetic couplings for the metal throuth hole arrangement between third, the 4th resonant cavity
The gap of window.First microstrip line is connected with the boundary of the first resonant cavity, the boundary of the second microstrip line and the second resonant cavity
It is connected, and the connecting place of the first, second microstrip line and whole triangle resonant cavity does not have plated-through hole.Meanwhile in this implementation
In example, magnetic coupling is coupled as between first and second resonant cavity, second and third resonant cavity, third and the 4th resonant cavity;The
It is coupled as being electrically coupled between one and the 4th resonant cavity.
And first the junction of microstrip transmission line and the first resonant cavity be provided with stria to form co-planar waveguide transition structure;
The junction of second microstrip transmission line and the 4th resonant cavity is provided with stria to form co-planar waveguide transition structure.
In the present embodiment, the characteristic impedance of two microstrip transmission lines is 50 ohm.
In the present embodiment, which is mirror symmetrical structure.
Fig. 4 is bandpass filter S parameter simulation waveform of the present invention.Wherein, abscissa is frequency, unit:Girz is indulged
Coordinate is S parameter, unit:Decibel, dotted line indicate that the relationship of filter electromagnetic transmission coefficient and frequency, solid line indicate filter
The relationship of reflection of electromagnetic wave coefficient and frequency, it was demonstrated that can widen bandpass filtering by combining four right angled triangle resonant cavities
The bandwidth of device, transmission zero can be generated by introducing negative-feedback, improve Out-of-band rejection performance.
In the embodiment of the present invention, medium substrate is using 5880 dielectric-slabs of Rogers, dielectric constant 2.2, thickness
0.508 millimeter.As shown in Figure 4, the bandpass filter better performances of the present embodiment, the center operating frequency of passband are respectively
12.4GHz, relative bandwidth 5.4% are -0.6dB with interior minimum insertion loss, and return loss is in -20dB hereinafter, transmission zero
Point hereinafter, transmission zero occur in passband both sides, illustrates excellent performance inside and outside the filter passband in -35dB, and have compared with
High frequency selectivity and Out-of-band rejection performance.
In addition to the implementation, the present invention can also have other embodiment.It is all to use equivalent substitution or equivalent transformation shape
At technical solution, fall within the scope of protection required by the present invention.
Claims (10)
1. integrating the bandpass filter of resonant cavity based on right angled triangle substrate, it is characterised in that:Including layer successively from top to bottom
The diamond shape resonant cavity that folded upper surface metal layer, dielectric substrate and lower surface metal earth plate is constituted;Along the dielectric substrate
Four edges edge and its two diagonal lines are placed with several cylinder type metal through-holes, by cylinder type metal through-hole that diamond shape is humorous
The chamber that shakes is divided into the resonant cavity of four groups of rectangular triangles;
First resonant cavity is equal with the triangle area of third resonant cavity, the triangle of the second resonant cavity and the 4th resonant cavity
Area equation, and the area of second, four resonant cavities is simultaneously greater than the area of the first and third resonant cavity;
Upper surface metal layer between first, fourth resonant cavity is equipped with S-type fluting;First, fourth resonant cavity
The first microstrip transmission line and the second microstrip transmission line are connected separately on triangle base, first and second microstrip transmission line
Characteristic impedance is 50 ohm.
2. the bandpass filter according to claim 1 for integrating resonant cavity based on right angled triangle substrate, it is characterised in that:
For first, second, third, fourth resonant cavity respectively using its adjacent right-angle surface as coupling surface, coupling two-by-two forms a water chestnut
Shape resonant cavity.
3. the bandpass filter according to claim 2 for integrating resonant cavity based on right angled triangle substrate, it is characterised in that:
It is coupled as magnetic coupling between first and second described resonant cavity, second and third resonant cavity, third and the 4th resonant cavity;First
It is coupled as being electrically coupled between the 4th resonant cavity.
4. the bandpass filter according to claim 2 for integrating resonant cavity based on right angled triangle substrate, it is characterised in that:
The minimum angles of the right angled triangle of four groups of resonant cavities are 30 °.
5. the bandpass filter according to claim 1 for integrating resonant cavity based on right angled triangle substrate, it is characterised in that:
There are the gaps of one section of magnetic coupling window for cylinder type metal through-hole arrangement between first and second resonant cavity, second and third is humorous
The cylinder type metal through-hole arrangement shaken between chamber is there are the gap of one section of magnetic coupling window, the circle between third and fourth resonant cavity
There are the gaps of one section of magnetic coupling window for the arrangement of column type plated-through hole.
6. the bandpass filter according to claim 5 for integrating resonant cavity based on right angled triangle substrate, it is characterised in that:
Cylinder type metal through-hole between first, fourth resonant cavity is arranged there are one section of gap, the upper surface in the gap
Metal layer is equipped with S-type fluting.
7. the bandpass filter according to claim 1 for integrating resonant cavity based on right angled triangle substrate, it is characterised in that:
The connecting place of first and second microstrip transmission line and the first, fourth resonant cavity is without cylinder type metal through-hole.
8. the bandpass filter according to claim 7 for integrating resonant cavity based on right angled triangle substrate, it is characterised in that:
The junction of first microstrip transmission line and the first resonant cavity is provided with stria to form co-planar waveguide transition structure;Described second
The junction of microstrip transmission line and the 4th resonant cavity is provided with stria to form co-planar waveguide transition structure.
9. the bandpass filter according to claim 1 for integrating resonant cavity based on right angled triangle substrate, it is characterised in that:
The dielectric substrate lower surface metal layer covers entire dielectric substrate lower surface as metal ground plate, the metal ground plate.
10. the bandpass filter according to claim 1 for being integrated resonant cavity based on right angled triangle substrate, feature are existed
In:The bandpass filter is mirror symmetrical structure, described first and the 4th resonant cavity it is symmetrical in minute surface, second and third resonance
Chamber is symmetrical in minute surface.
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109755706A (en) * | 2019-02-28 | 2019-05-14 | 江南大学 | The electromagnetism branch coupling filter of high out-of-side rejection |
CN110854490A (en) * | 2019-11-20 | 2020-02-28 | 武汉凡谷电子技术股份有限公司 | High-suppression miniaturized filter |
CN112952322A (en) * | 2021-01-29 | 2021-06-11 | 南京邮电大学 | Dual-mode band-pass filter based on folded substrate integrated waveguide resonant cavity |
CN113300065A (en) * | 2021-05-25 | 2021-08-24 | 南京邮电大学 | Mixed mode band-pass filter based on triangular substrate integrated waveguide |
CN114267930A (en) * | 2021-12-31 | 2022-04-01 | 杭州电子科技大学 | Double-zero-point adjustable substrate integrated waveguide filter structure suitable for 5G communication high frequency band |
CN115360488A (en) * | 2022-08-08 | 2022-11-18 | 重庆邮电大学 | Band-pass filter based on one-eighth mode substrate integrated waveguide |
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CN1964131A (en) * | 2006-11-24 | 2007-05-16 | 东南大学 | A filter of direct coupling triangle substrate integral waveguide cavity |
CN103326093A (en) * | 2013-04-19 | 2013-09-25 | 上海大学 | Novel cross coupling substrate integrated waveguide band-pass filter |
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CN205595429U (en) * | 2016-04-29 | 2016-09-21 | 信阳师范学院 | Integrated waveguide filter of controllable mixed electromagnetic coupling substrate |
CN106410335A (en) * | 2016-11-24 | 2017-02-15 | 南京邮电大学 | Pentagon band-pass filter having transmission zero |
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CN1964131A (en) * | 2006-11-24 | 2007-05-16 | 东南大学 | A filter of direct coupling triangle substrate integral waveguide cavity |
CN103326093A (en) * | 2013-04-19 | 2013-09-25 | 上海大学 | Novel cross coupling substrate integrated waveguide band-pass filter |
CN103427138A (en) * | 2013-08-15 | 2013-12-04 | 电子科技大学 | Multilayer hexagonal substrate integrated waveguide filter |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109755706A (en) * | 2019-02-28 | 2019-05-14 | 江南大学 | The electromagnetism branch coupling filter of high out-of-side rejection |
CN110854490A (en) * | 2019-11-20 | 2020-02-28 | 武汉凡谷电子技术股份有限公司 | High-suppression miniaturized filter |
CN112952322A (en) * | 2021-01-29 | 2021-06-11 | 南京邮电大学 | Dual-mode band-pass filter based on folded substrate integrated waveguide resonant cavity |
CN112952322B (en) * | 2021-01-29 | 2022-01-28 | 南京邮电大学 | Dual-mode band-pass filter based on folded substrate integrated waveguide resonant cavity |
CN113300065A (en) * | 2021-05-25 | 2021-08-24 | 南京邮电大学 | Mixed mode band-pass filter based on triangular substrate integrated waveguide |
CN114267930A (en) * | 2021-12-31 | 2022-04-01 | 杭州电子科技大学 | Double-zero-point adjustable substrate integrated waveguide filter structure suitable for 5G communication high frequency band |
CN115360488A (en) * | 2022-08-08 | 2022-11-18 | 重庆邮电大学 | Band-pass filter based on one-eighth mode substrate integrated waveguide |
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Application publication date: 20180821 |