CN108428746A - A kind of absorbing film for thermophotovoltaic - Google Patents
A kind of absorbing film for thermophotovoltaic Download PDFInfo
- Publication number
- CN108428746A CN108428746A CN201710082379.9A CN201710082379A CN108428746A CN 108428746 A CN108428746 A CN 108428746A CN 201710082379 A CN201710082379 A CN 201710082379A CN 108428746 A CN108428746 A CN 108428746A
- Authority
- CN
- China
- Prior art keywords
- layers
- thermophotovoltaic
- pmma
- absorbing film
- graphene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 21
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 16
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 16
- 239000002245 particle Substances 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000002110 nanocone Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 44
- 238000000034 method Methods 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 graphite Alkene Chemical class 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
A kind of absorbing film for thermophotovoltaic, including graphene layer, Au layers, Ag layers, PMMA layers, it is characterised in that：There is graphene layer with Ag layers of centre at described Au layers, has graphene layer in Au layers of the lower surface, there are PMMA layers in Ag layers of the upper surface, described Ag layers is made of multiple hemisphere Ag particles.The present invention can absorb more broadband infrared and far red light, while playing graded index again using the nanocone structures of coining；Ag particles are clipped between PMMA and graphene, and surface plasma resonance can occur, and play the local to light；Au layers, the local of the light for more long wavelength；Graphene is used to improve the mobility of hot photon and phonon；Improve the photoelectric conversion efficiency of thermophotovoltaic.
Description
Technical field
The invention belongs to solar energy utilization technique fields, specially a kind of absorbing film for thermophotovoltaic.
Background technology
Thermophotovoltaic is also thermoelectric cell, and main utilize accounts for most of infrared light and the light of more long wavelength in sunlight
It generates electricity, electricity generating principle is similar to photovoltaic at present on the market.Currently, the absorbing film of thermophotovoltaic is a thin layer of graphite
Alkene, therefore, the transformation efficiency of thermophotovoltaic are generally relatively low.
Invention content
The present invention can absorb infrared and remote red in view of the above-mentioned problems, a kind of absorbing film for thermophotovoltaic of offer
The outer overwhelming majority uses up, and improves the photoelectric conversion efficiency of thermophotovoltaic.
The technical scheme is that：A kind of absorbing film for thermophotovoltaic, including graphene layer, Au layers, Ag layers,
PMMA layers, it is characterised in that：There is graphene layer with Ag layers of centre at described Au layers, has graphene in Au layers of the lower surface
Layer, has PMMA layers, described Ag layers is made of multiple hemisphere Ag particles in Ag layers of the upper surface.
Au layers of the thickness is 5~20 nanometers.
A diameter of 10~15 nanometers of the hemisphere Ag particles.
PMMA layers of the thickness is 90~100 nanometers.
The beneficial effects of the invention are as follows：The present invention provides a kind of absorbing film for thermophotovoltaic, using receiving for coining
Rice wimble structure, can absorb more broadband infrared and far red light, while playing graded index again；Ag particles are clipped in PMMA
Between graphene, surface plasma resonance can occur, play the local to light；Au layers, the office of the light for more long wavelength
Domain；Graphene is used to improve the mobility of hot photon and phonon；Improve the photoelectric conversion efficiency of thermophotovoltaic.
Description of the drawings
Fig. 1 is the structural diagram of the present invention.
In figure, 1. thermophotovoltaic matrixes, 2. graphene layers, 3.Au layers, 4.Ag layers, 5.PMMA layers, 6. hemisphere Ag particles,
7. electrode leads to client.
Specific implementation mode：
The present invention will be further described below with reference to the drawings.
As shown in Figure 1, the present invention is a kind of absorbing film for thermophotovoltaic, including graphene layer 2, Au layer 3, Ag layers
4, PMMA layers 5, it is characterised in that：There is graphene layer 2 in the centre of the Au layers 3 and Ag layers 4, in the lower surface of the Au layers 3
There is graphene layer 2, there is PMMA layers 5, the Ag layers 4 to be made of multiple hemisphere Ag particles 6 in the upper surface of the Ag layers 4.
The thickness of the Au layers 3 is 5~20 nanometers.
A diameter of 10~15 nanometers of the hemisphere Ag particles 6.
The thickness of the PMMA layers 5 is 90~100 nanometers.
The present invention is obtained by following process：
(1) alcohol washes thermophotovoltaic matrix 1,1 one end of thermophotovoltaic matrix is used to be equipped with electrode leads to client 7, then
With chemical synthesis process, thin layer graphene layer 2 is grown on 1 surface of thermophotovoltaic matrix；
(2) magnetron sputtering technique is used, vapor deposition layer of Au layer 3, thickness is at 5~20 nanometers；
(3) a layer graphene layer 2 is synthesized again on the surface that Au layers 3 have been deposited, then use electron beam evaporation process, time
15 minutes, 750~770 DEG C of temperature completed the making of multiple hemisphere Ag particles 6, was made Ag layers 4, hemisphere Ag particles 6 it is a diameter of
10~15 nanometers；
(4) after Ag layers 4 are made, fine jade applies the PMMA layers 5 of 90~100 nanometer thickness；
(5) it after curing, is imprinted with nano oxidized aluminium foil, surface forms the nanocone structures of coining, completes.
The present invention provides a kind of absorbing film for thermophotovoltaic, using the nanocone structures of coining, can absorb more
Broadband infrared and far red light, while graded index is played again；Ag particles are clipped between PMMA and graphene, Ke Yifa
Raw surface plasma resonance, plays the local to light；Au layers, the local of the light for more long wavelength；Graphene is for improving heat
The mobility of photon and phonon；Improve the photoelectric conversion efficiency of thermophotovoltaic.
Claims (4)
1. a kind of absorbing film for thermophotovoltaic, including graphene layer, Au layers, Ag layers, PMMA layers, it is characterised in that：
Described Au layers has graphene layer with Ag layers of centre, has graphene layer in Au layers of the lower surface, in Ag layers of the upper table
Face has PMMA layers, and described Ag layers is made of multiple hemisphere Ag particles.
2. a kind of absorbing film for thermophotovoltaic according to claim 1, it is characterised in that：Au layers of the thickness
It is 5~20 nanometers.
3. a kind of absorbing film for thermophotovoltaic according to claim 1, it is characterised in that：The hemisphere Ag particles
A diameter of 10~15 nanometers.
4. a kind of absorbing film for thermophotovoltaic according to claim 1, it is characterised in that：PMMA layers of the thickness
Degree is 90~100 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710082379.9A CN108428746A (en) | 2017-02-12 | 2017-02-12 | A kind of absorbing film for thermophotovoltaic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710082379.9A CN108428746A (en) | 2017-02-12 | 2017-02-12 | A kind of absorbing film for thermophotovoltaic |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108428746A true CN108428746A (en) | 2018-08-21 |
Family
ID=63155638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710082379.9A Pending CN108428746A (en) | 2017-02-12 | 2017-02-12 | A kind of absorbing film for thermophotovoltaic |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108428746A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130050166A (en) * | 2011-11-07 | 2013-05-15 | 삼성전자주식회사 | Enhanced luminescence light emitting device using surface plasmon resonance |
| US20140159181A1 (en) * | 2012-12-11 | 2014-06-12 | Samsung Electronics Co., Ltd. | Graphene-nanoparticle structure and method of manufacturing the same |
| CN103972324A (en) * | 2013-02-01 | 2014-08-06 | 上海交通大学 | Silicon film solar cell surface light trapping structure preparing method based on nano imprinting |
| CN203932070U (en) * | 2014-04-29 | 2014-11-05 | 江苏鼎云信息科技有限公司 | A kind of silicon solar battery assembly |
| CN204424292U (en) * | 2015-03-17 | 2015-06-24 | 常熟理工学院 | A kind of surfaces etc. are from reinforced graphite alkene silica-based solar cell |
| CN105304729A (en) * | 2015-09-08 | 2016-02-03 | 安阳师范学院 | Flexible optoelectronic device based on graphene and II-VI group semiconductor axial p-n junction nanowire array and preparation method thereof |
| CN206432268U (en) * | 2017-02-12 | 2017-08-22 | 无锡马丁格林光伏科技有限公司 | A kind of absorbing film for thermophotovoltaic |
-
2017
- 2017-02-12 CN CN201710082379.9A patent/CN108428746A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130050166A (en) * | 2011-11-07 | 2013-05-15 | 삼성전자주식회사 | Enhanced luminescence light emitting device using surface plasmon resonance |
| US20140159181A1 (en) * | 2012-12-11 | 2014-06-12 | Samsung Electronics Co., Ltd. | Graphene-nanoparticle structure and method of manufacturing the same |
| CN103972324A (en) * | 2013-02-01 | 2014-08-06 | 上海交通大学 | Silicon film solar cell surface light trapping structure preparing method based on nano imprinting |
| CN203932070U (en) * | 2014-04-29 | 2014-11-05 | 江苏鼎云信息科技有限公司 | A kind of silicon solar battery assembly |
| CN204424292U (en) * | 2015-03-17 | 2015-06-24 | 常熟理工学院 | A kind of surfaces etc. are from reinforced graphite alkene silica-based solar cell |
| CN105304729A (en) * | 2015-09-08 | 2016-02-03 | 安阳师范学院 | Flexible optoelectronic device based on graphene and II-VI group semiconductor axial p-n junction nanowire array and preparation method thereof |
| CN206432268U (en) * | 2017-02-12 | 2017-08-22 | 无锡马丁格林光伏科技有限公司 | A kind of absorbing film for thermophotovoltaic |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Wu et al. | Photothermal materials: A key platform enabling highly efficient water evaporation driven by solar energy | |
| Qiao et al. | Plasmon Ag-promoted solar–thermal conversion on floating carbon cloth for seawater desalination and sewage disposal | |
| Bai et al. | High-efficiency solar steam generation based on blue brick-graphene inverted cone evaporator | |
| CN102403376B (en) | n-i-p heterojunction solar cell with silicon quantum dot and preparation method thereof | |
| CN103626172A (en) | Method for preparing graphite paper with high thermal conductivity | |
| CN102602071A (en) | Solar selective absorbing coating as well as preparation method and application thereof | |
| CN107507928A (en) | A kind of regulation and control perovskite/silicon laminated cell Zhong Ding, the method for bottom cell light currents match | |
| CN102709399B (en) | Manufacturing method of high-efficiency nano antenna solar battery | |
| CN102544177B (en) | Plasma strengthening upconverter for solar cells and preparation method thereof | |
| CN103779499A (en) | Graphene composite film material interspersed with Ag nanoparticles and preparation | |
| Lin et al. | Direct growth of graphene nanowalls on quartz substrates as transparent conductive electrodes for perovskite solar cells | |
| CN101556088B (en) | Solar thermal collector | |
| JP2010524223A (en) | Ceramic tiles with surfaces functionalized with solar cells | |
| CN206432268U (en) | A kind of absorbing film for thermophotovoltaic | |
| CN103606628A (en) | Novel thin-film solar cell by means of metamaterials | |
| CN201463375U (en) | Solar energy heat collecting tube | |
| CN101399292A (en) | High temperature heat radiation integrated device used for photovoltaic electricity generation | |
| CN101556089B (en) | Solar thermal collector | |
| CN103035843A (en) | Organic photovoltaic cell and preparation method thereof | |
| CN108428746A (en) | A kind of absorbing film for thermophotovoltaic | |
| Chen et al. | Energy-tunable photon-enhanced thermal tunneling electrons for intrinsic adaptive full spectrum solar energy conversion | |
| CN206574729U (en) | A kind of Double-side hot photovoltaic cell structure | |
| CN109518149A (en) | Along the preparation method of the antimony selenide optoelectronic film of<002>direction preferential growth | |
| Liang et al. | New carbon for electrochemical energy storage and conversion | |
| CN105568238A (en) | Preparation method for film system provided with solar selective absorption thin film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |