CN108426489A - A kind of semiconductor bridge chip and its encapsulating structure - Google Patents
A kind of semiconductor bridge chip and its encapsulating structure Download PDFInfo
- Publication number
- CN108426489A CN108426489A CN201810310798.8A CN201810310798A CN108426489A CN 108426489 A CN108426489 A CN 108426489A CN 201810310798 A CN201810310798 A CN 201810310798A CN 108426489 A CN108426489 A CN 108426489A
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- Prior art keywords
- layer
- bridge chip
- hole
- semiconductor bridge
- semiconductor
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Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F42—AMMUNITION; BLASTING
- F42B—EXPLOSIVE CHARGES, e.g. FOR BLASTING, FIREWORKS, AMMUNITION
- F42B3/00—Blasting cartridges, i.e. case and explosive
- F42B3/10—Initiators therefor
- F42B3/12—Bridge initiators
- F42B3/13—Bridge initiators with semiconductive bridge
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F42—AMMUNITION; BLASTING
- F42B—EXPLOSIVE CHARGES, e.g. FOR BLASTING, FIREWORKS, AMMUNITION
- F42B33/00—Manufacture of ammunition; Dismantling of ammunition; Apparatus therefor
- F42B33/02—Filling cartridges, missiles, or fuzes; Inserting propellant or explosive charges
- F42B33/025—Filling cartridges, missiles, or fuzes; Inserting propellant or explosive charges by compacting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The present invention provides a kind of semiconductor bridge chip and its encapsulating structures, wherein semiconductor bridge chip, which is characterized in that including：Positioned at the monocrystalline silicon layer of the bottom of semiconductor bridge chip；It aoxidizes to form silicon dioxide layer in the upper surface of the monocrystalline silicon；The subregion of the silicon dioxide layer is provided with polysilicon layer；It is covered with metal electrode on the polysilicon layer；Further include the through-hole through the polysilicon layer, silicon dioxide layer and monocrystalline silicon layer, is provided with metallic conduction area in the through-hole, the electric signal that metal electrode obtains is transferred to entire through-hole by the metallic conduction area.The chip can cancel bonding wire with electrode plug vertical connection, so that medicament is in close contact with semiconductive bridge, improve the reliability of Semiconductor Bridge Initiator, and semiconductor technology mass production can be used.
Description
Technical field
The invention belongs to semiconductor bridge chip technical fields, and in particular to can vertically arranged semiconductor bridge chip and its envelope
Assembling structure, this chip have the through-hole of metallization, have the metal copper conductor of plating in through-hole, can be vertically mounted to electrode plug
On.
Background technology
Typical semiconductor bridge chip device is by the electrode of a pair of conduction, and the bridging element structure that links together small
At.Semiconductive bridge structure is in " H " shapes, the bottom is monocrystalline substrate, is followed successively by silicon dioxide layer, heavily doped polysilicon above
Layer, aluminium（Or multiple layer metal）Electrode.Pulse is applied to the metal electrode at semiconductive bridge both ends by DC power supply or capacitor
On electric current to semiconductive bridge, bridge zone is because Joule heat gasifies rapidly, and under the action of electric field, formed 4000K~6000K it is weak it is equal from
Daughter detonates with post plasma or lights the explosive of close contact.
Semiconductor bridge chip is connected by welding on electrode plug.Electrode plug is usually by ceramics, glass, metal or other
Material is constituted.On upper surface of the lower surface of semiconductor bridge chip by epoxy resin bonding connection to electrode plug, then with super
Sound wave welds Si-Al wire or gold thread on from the electrode on chip to the payment to a porter of electrode plug, commonly using multiply bonding wire to improve peace
Overall coefficient.
Patent 1（F.N.Mandigo,G.C.Mei,J.C.Fister. Semiconductor bridge (SCB)
packaging system：US,USP 5113764[P].1992）A kind of no wire welding type encapsulation, encapsulation are proposed in an embodiment
Material is metal and polymer, no ceramics, when reducing processing or because thermotropic mechanical stress makes the danger that encapsulation ruptures.Do not weld
Line eliminates wire bond fracture or causes the danger of failure of apparatus because of desoldering.
Patent 2 (Kenneth Ellsworth Willis, Martin Gerald Richman, William
FaheDavidy etc. Semiconductor bridge explosive device: US,USP 5912427[P]
.1999 the TO shells and TO electrode plugs for) using the widely used standard of semicon industry, eliminate using ceramic electrode plug and Dalian
Connect defect caused by region.SCB elements are attached on electrode plug, eutectic bond is generated between SCB elements and electrode plug, is right
SCB elements are attached and weld the entire assembling process such as powder charge chamber with conducting wire with pin, can use the existing automatic assembling of industry
Equipment is completed.
(Bernardo Martinez-Tovar, John A, the Montoya. Surface-connectable of patent 3
semiconductor bridge elements and devices including the same:US,USP 6054760
[P] .2000) propose can surface connection semiconductor structure.It is all heavy in semiconductive bridge upper and lower surface and both sides that the structure passes through
Product metallic film forms an access from top to bottom, and SCB bridging clips are between two pieces of metallic plates on upper layer, two blocks of gold of lower layer
It is electrode to belong to plate.When being welded to connect with electrode plug, the structure is made to be not necessarily to wire bonding.
(Bernardo Martinez-Tovar, the Craig J. Boucher. Surface mountable of patent 4
semiconductor bridge die:US, USP 9134100 [P] .2015) it proposes in each side of semiconductor bridge zone, shape
At one or more angled side walls, conductive materials are plated on each side wall, and which provides the front surfaces by chip
Continuous conduction channel.The lower surface of chip is connected to epoxy resin in the front surface of electrode plug.It is connected by welding to electrode
Beyond the Great Wall on the end of several leads on surface, the connection of semiconductor bridge chip surface is completed.
Patent 5（Wang Qi urges acute hearing, Zhang Wenbin, a kind of encapsulating structure of semiconductive bridge：CN,205595322 U）It proposes a kind of
The encapsulating structure of semiconductive bridge, by the conduction band that metallizes between electrode plug electrode and semiconductor bridge chip, metallization conduction band with
The connecting portion of contact conductor and chip is both provided with conduction connector, to complete semiconductor bridge chip and electrode plug contact conductor
Connection.
Semiconductor bridge chip is connected using ordinary electrode plug, there is the rupture of compression ceramics, bonding wire disconnection or contact and loosen, with
And the presence due to bonding wire, the problems such as medicament is with semiconductive bridge close contact cannot be made, affect the hair of Semiconductor Bridge Initiator
Fiery performance；Simultaneously as bonding wire uses manual welding, electrode plug connection semiconductor bridge chip consistency cannot be guaranteed.
An electrode of semiconductive bridge fills epoxy resin by silver in patent 1 and slicken solder is connected to a conducting terminal
On, the electrode of another semiconductive bridge is crimped onto on another conducting terminal by a conductive gasket, is eliminated in this way
The bonding wire of semiconductive bridge is connected, but such encapsulating structure is more complicated, technique realizes that difficulty is big.
Packaging technology requires relatively high in patent 2, and chip attachment is not easy to connect, and as period of storage increases,
Junction can generate larger contact resistance because the reasons such as aoxidizing, loosening.
To semiconductive bridge chip metal electrode, side wall and lower surface deposited metal in patent 3, electrical connection is formed, side wall is heavy
The uniformity of product metal is difficult control, and technique is realized complicated.
Each side of 4 semiconductor bridge zone of patent forms one or more angled side walls by etching, and technique is difficult
Degree is big, complicated.
Patent 5 is attached between electrode plug contact conductor and semiconductor bridge chip by metal conduction band, due to partly leading
Body bridge chip has certain thickness, and metal conduction band and semiconductor bridge chip electrode in the same plane, it is disconnected not easily lead to bonding wire
It opens or contact loosens, and connected using metal conduction band, the size of electrode plug is caused to increase.
Invention content
The object of the present invention is to provide a kind of semiconductor bridge chip, which can cancel weldering with electrode plug vertical connection
Line makes medicament be in close contact with semiconductive bridge, improves the reliability of Semiconductor Bridge Initiator, and it is big that semiconductor technology can be used
Batch production.
Realize that the technical solution of the object of the invention is：
A kind of semiconductor bridge chip, including：
Positioned at the monocrystalline silicon layer of the bottom of semiconductor bridge chip；
It aoxidizes to form silicon dioxide layer in the upper surface of the monocrystalline silicon；
The subregion of the silicon dioxide layer is provided with polysilicon layer；
It is covered with metal electrode on the polysilicon layer；
Further include the through-hole through the polysilicon layer, silicon dioxide layer and monocrystalline silicon layer, metal is provided in the through-hole
The electric signal that metal electrode obtains is transferred to entire through-hole by conduction region, the metallic conduction area.
In a preferred embodiment of the invention, the metallic conduction area is that setting plain conductor is formed in through-hole.
In a preferred embodiment of the invention, the metallic conduction area is the silica that through-hole is formed through peroxidating
Layer deposited metal seed layer is formed.
In a preferred embodiment of the invention, it is electroplate with metal layer in the deposited metal seed layer.
In a preferred embodiment of the invention, the central area of the semiconductor bridge chip, and it is located at polysilicon layer
Upper etching forms bridge zone, and the through-hole includes at least two, is located at the both sides of bridge zone.
In a preferred embodiment of the invention, the bridge zone is in " H " shape.
In a preferred embodiment of the invention, the lateral cross-sectional area of the metal electrode is more than the cross of the through-hole
To area of section.
A kind of encapsulating structure, including electrode plug and above-mentioned semiconductor bridge chip, the electrode plug include electrode plug ontology, with
And the payment to a porter being connect with electrode plug ontology, the payment to a porter are used to receive the electric signal of semiconductor chip transmission, the payment to a porter and institute
State through-hole connection setting.
In a preferred embodiment of the invention, the axis of the through-hole is aligned with the axis of the payment to a porter.
In a preferred embodiment of the invention, the upper surface of the electrode plug ontology and the semiconductor bridge chip
The lower surface of monocrystalline silicon layer is welded and fixed.
Compared with prior art, the present invention its remarkable advantage is：
1, pass through the laser boring in semiconductor bridge chip or deep silicon etching and the plating filling conduction after inner wall forms oxidation film
The semiconductor bridge chip that metallic copper lead technology is formed, it is integrated using semiconductor technology, it is simple for process and at low cost, it can be large quantities of
Amount production.
2, semiconductor bridge chip is connect by the metallic conduction area formed in through-hole with electrode plug upper surface metal, is eliminated
The bonding wire routinely connected avoids bonding wire and is broken and loosens under stress, and semiconductor after Semiconductor Bridge Initiator pressing
Bridge bridge core is in direct contact with medicament, improves the reliability of Semiconductor Bridge Initiator.
3, semiconductor bridge chip and electrode plug vertical connection can reduce the diameter of electrode plug, and in semiconductive bridge core
The size of on piece medicament can make the size reduction of Semiconductor Bridge Initiator.
4, the integration packaging of semiconductor bridge chip and electrode plug integrates welding technique using semiconductor, avoids biography
The problem of process consistency difference, simple for process caused by manual welding when system semiconductive bridge is connect with electrode plug, can high-volume
Production.
Description of the drawings
Fig. 1-(a) is the vertical view of semiconductor bridge chip；
Fig. 1-(b) is the sectional view of semiconductor bridge chip；
Fig. 2 is semiconductor bridge chip of the present invention and electrode plug schematic diagram connected vertically.
Specific implementation mode
Below in conjunction with the accompanying drawings and preferred embodiment the present invention is described in further detail.
Embodiment 1：
One kind can semiconductor bridge chip connected vertically, including monocrystalline silicon, silica, polysilicon bridge zone, wherein polysilicon layer
On be covered with metal electrode；Via from polysilicon to monocrystalline silicon is provided with metallic conduction area, the metallic conduction area in via
The electric signal that metal electrode obtains is transferred to entire through-hole.
Specifically, monocrystalline silicon of the present invention is the bottom in semiconductor bridge chip, as substrate, plays support
Effect.Silica of the present invention plays the role of heat-insulated, insulation on the upper layer of monocrystalline silicon.It is of the present invention more
Crystal silicon bridge zone is to form bridge zone by etching.Via of the present invention is from the polysilicon bridge zone of semiconductor bridge chip to partly
The through-hole that the lower surface monocrystalline silicon of conductor bridge chip is formed, through-hole pass through polysilicon layer, silicon dioxide layer, monocrystalline silicon layer.
Metal electrode of the present invention is to deposit multiple layer metal on the polysilicon, is connected with the metallic conduction area in via
It connects, forms the interface channel of current loop.
The scheme that wherein the embodiment of the present invention provides：Have on the hole wall of the invention via thermal oxide at titanium dioxide
Silicon layer, silicon dioxide layer deposited metal seed layer, metal seed layer is by plating, in via internal shaping metal copper conductor.
By laser or deep silicon etching, through-hole is formed at the metal electrode of semiconductor bridge chip, passes through heat in through-hole
Layer of silicon dioxide layer is deposited as barrier layer, then metal is formed in silica outer layer plating metal copper by metal seed layer
Copper conductor completes the perforation of metal welding panel layer monocrystalline silicon on earth, solder(ing) paste is smeared on the metal column of electrode plug upper surface, will
The center of middle metal copper conductor of the via of semiconductor bridge chip is aligned placement with the metal column center of electrode plug upper surface, passes through
The method of welding completes the vertical connection of semiconductor bridge chip and electrode plug.
Embodiment 2：
According to an embodiment of the invention, semiconductor bridge chip have a kind of structure of H-shaped, 1 both sides of center bridge zone all there are one
Through-hole 3.
The inner wall of through-hole has the silicon dioxide layer 4 that thermal oxide generates, which plays insulating effect, in dioxy
The material copper having conductivity is electroplated using metal seed layer as anode material in SiClx layer deposited metal seed layer in hole, from
And by the connection of metallic copper 5 in the upper surface metal electrode 2 of chip and through-hole, provide one from die bottom surface to chip on
One continuous conductive path on surface.
Hole of the lower surface of chip filled with metallic copper passes through in solder(ing) paste and the pin of 10 upper surface of electrode plug payment to a porter
Heart alignment welding, completes the vertical connection of semiconductive bridge electrode plug, is then provided in this way by one of electrode plug pin to chip
Continuous electrical connection.
According to shown in Fig. 1-(a) and Fig. 1-(b), semiconductor bridge chip includes single crystal layer-of-substrate 6, silicon dioxide layer 7,
Polysilicon layer 8 is etched into the bridge zone 1 of H-shaped by polysilicon layer 8, from polysilicon 8 penetrate silica 7 to monocrystalline silicon 6 through-hole 3,
In the silicon dioxide layer 4 that 3 inner wall thermal oxide of through-hole generates, using the metal seed layer on silica as anode material, in hole
Interior electroplating of conductive material copper 5, metal electrode 2 cover through-hole 3, can realize electrical connection in the both sides of H-shaped bridge zone.
The semiconductor bridge chip is the rectangle that the length of side is 1.3x1.6mm.
Semiconductor bridge chip substrate is monocrystalline silicon 6, and thickness 0.4mm is aoxidized on monocrystalline silicon 6 and generated silicon dioxide layer 7,
Thickness is 0.6um, and with vapor deposition method deposit polycrystalline silicon layer 8, then thickness 1.5um adulterates boron or phosphorus, then passes through mask
It is lithographically formed polysilicon bridge zone 1, bridge zone width 0.3mm, length 0.1mm, then passes through laser from polysilicon layer 8 to monocrystalline silicon layer 6
Punching or deep silicon etching form through-hole 3, diameter 200um, then are aoxidized on 3 inner wall of through-hole by thermal oxidation technology and generate dioxy
SiClx layer 4, thickness 0.3um, silicon dioxide layer 4 play insulating effect, prevent the copper being electroplated in hole to be connected with substrate monocrystalline silicon 6, make
Electric current cannot pass through semiconductor bridge chip completely.
By the metal seed layer being deposited in silicon dioxide layer 4, which can be nickel, by metal seed layer logical
Then two metal electrodes 2, metal is deposited in 200um or so in plating metal copper 5 in the inner wall silicon dioxide layer 4 in hole 3, diameter
Thickness of electrode is 1um.
Fig. 2 is semiconductor bridge chip and electrode plug schematic diagram connected vertically.Figure it is seen that semiconductor bridge chip
Lower surface, be mounted on the upper surface of electrode plug 9 using solder(ing) paste, and the payment to a porter 10 of the center of through-hole 3 and electrode plug 9
Center is aligned, and only alignment just can guarantee that contact is best, have minimum resistance value, maximum current capacity.By using welding side
Method realizes the electrical connection of the payment to a porter 10 from semiconductive bridge metal electrode 2 to electrode plug 9.The method of these welding includes that hot wind returns
Fluid welding, infrared ray Reflow Soldering and reflux gas welding etc..
The present invention in semiconductor bridge chip upper surface to lower surface by forming with conductive through-hole, with electrode plug upper table
The payment to a porter in face by welding, is completed, from electrode plug payment to a porter to the connection on semiconductive bridge surface, to provide cancellation electrode plug
To the method for semiconductor bridge chip bonding wire, contact conductor fracture, failure caused by propellant charge pressure are avoided, medicament and semiconductor are made
Bridge is in close contact, and improves the ignition quality of Semiconductor Bridge Initiator, and integrated circuit work can be used in the semiconductor bridge chip
Skill is produced in enormous quantities, and simple for process, consistency is good, in the case of same size semiconductor bridge chip, reduces electrode plug
Size.
Claims (10)
1. a kind of semiconductor bridge chip, which is characterized in that including：
Positioned at the monocrystalline silicon layer of the bottom of semiconductor bridge chip；
It aoxidizes to form silicon dioxide layer in the upper surface of the monocrystalline silicon；
The subregion of the silicon dioxide layer is provided with polysilicon layer；
It is covered with metal electrode on the polysilicon layer；
Further include the through-hole through the polysilicon layer, silicon dioxide layer and monocrystalline silicon layer, metal is provided in the through-hole
The electric signal that metal electrode obtains is transferred to entire through-hole by conduction region, the metallic conduction area.
2. a kind of semiconductor bridge chip according to claim 1, which is characterized in that the metallic conduction area is to be set in through-hole
Plain conductor is set to be formed.
3. a kind of semiconductor bridge chip according to claim 1 or 2, which is characterized in that the metallic conduction area is through-hole
The silicon dioxide layer deposited metal seed layer formed through peroxidating is formed.
4. a kind of semiconductor bridge chip according to claim 3, which is characterized in that be electroplated in the deposited metal seed layer
There is metal layer.
5. a kind of semiconductor bridge chip according to claim 1, which is characterized in that the center of the semiconductor bridge chip
Domain, and etching forms bridge zone on polysilicon layer, the through-hole includes at least two, is located at the both sides of bridge zone.
6. a kind of semiconductor bridge chip according to claim 5, which is characterized in that the bridge zone is in " H " shape.
7. a kind of semiconductor bridge chip according to claim 1, which is characterized in that the lateral cross section face of the metal electrode
Lateral cross-sectional area of the product more than the through-hole.
8. a kind of encapsulating structure, which is characterized in that the semiconductor bridge chip including electrode plug and as described in claim 1-7, institute
It includes electrode plug ontology to state electrode plug, and the payment to a porter being connect with electrode plug ontology, and the payment to a porter is for receiving semiconductor chip
The electric signal of transmission, the payment to a porter connect setting with the through-hole.
9. a kind of encapsulating structure according to claim 8, which is characterized in that the axis of the axis of the through-hole and the payment to a porter
Line is aligned.
10. a kind of encapsulating structure according to claim 8 or claim 9, which is characterized in that the upper surface of the electrode plug ontology and
The lower surface of the monocrystalline silicon layer of the semiconductor bridge chip is welded and fixed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810310798.8A CN108426489A (en) | 2018-04-09 | 2018-04-09 | A kind of semiconductor bridge chip and its encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810310798.8A CN108426489A (en) | 2018-04-09 | 2018-04-09 | A kind of semiconductor bridge chip and its encapsulating structure |
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| Publication Number | Publication Date |
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| CN108426489A true CN108426489A (en) | 2018-08-21 |
Family
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810310798.8A Pending CN108426489A (en) | 2018-04-09 | 2018-04-09 | A kind of semiconductor bridge chip and its encapsulating structure |
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| CN102853724A (en) * | 2012-10-08 | 2013-01-02 | 南京理工大学 | Transduction component with surface-mounted semi-conductive bridge for electric initiating explosive device |
| CN103017197A (en) * | 2011-09-23 | 2013-04-03 | 中国电子科技集团公司第四十八研究所 | Lead-free packaging thin film bridge firer and manufacturing method thereof |
| CN204649089U (en) * | 2015-04-01 | 2015-09-16 | 南京理工大学 | SCB integrated nanometer is containing the electric detonation transducing unit of energy laminated film |
| CN105423340A (en) * | 2015-11-30 | 2016-03-23 | 中国电子科技集团公司第四十八研究所 | Integrated thin film bridge igniter and preparation method thereof |
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2018
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101632000A (en) * | 2006-12-01 | 2010-01-20 | 日本化药株式会社 | Ignition element mounting condenser, header assembly, ignition apparatus, airbag gas generating device, and seatbelt pretentioner gas generating device |
| CN201262533Y (en) * | 2008-05-08 | 2009-06-24 | 南京理工大学 | Semiconductor resistance bridge electrode plug |
| CN101699622A (en) * | 2009-11-18 | 2010-04-28 | 晶方半导体科技（苏州）有限公司 | Packaging structure and packaging method of semiconductor device |
| CN103017197A (en) * | 2011-09-23 | 2013-04-03 | 中国电子科技集团公司第四十八研究所 | Lead-free packaging thin film bridge firer and manufacturing method thereof |
| CN102853724A (en) * | 2012-10-08 | 2013-01-02 | 南京理工大学 | Transduction component with surface-mounted semi-conductive bridge for electric initiating explosive device |
| CN204649089U (en) * | 2015-04-01 | 2015-09-16 | 南京理工大学 | SCB integrated nanometer is containing the electric detonation transducing unit of energy laminated film |
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Application publication date: 20180821 |
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