CN108417715A - A kind of preparation method of the crystallinity Organic Thin Film Transistors of crystallinity solvent regulation and control - Google Patents
A kind of preparation method of the crystallinity Organic Thin Film Transistors of crystallinity solvent regulation and control Download PDFInfo
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- CN108417715A CN108417715A CN201810177328.9A CN201810177328A CN108417715A CN 108417715 A CN108417715 A CN 108417715A CN 201810177328 A CN201810177328 A CN 201810177328A CN 108417715 A CN108417715 A CN 108417715A
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- crystallinity
- solvent
- tcb
- rubrene
- chloroform
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
Abstract
The present invention devises a kind of preparation method of the crystallinity Organic Thin Film Transistors of crystallinity solvent regulation and control, i.e., on the basis of there are commonly solvent such as chloroform solvent, by adding 1,3,5 trichloro-benzenes of crystallinity solvent（TCB）, rubrene organic thin-film transistor, which is grown from unordered, becomes orderly growing method.By the way that the TCB solution drop coatings of chloroform solvent will be dissolved in Si/SiO2Underlay substrate is rapid that the rubrene semiconductor layer for being dissolved in chloroform solvent is added dropwise when taking advantage of its newly formed crystallization.TCB can first form one layer of uniform directive substrate modification layer on underlay substrate.Rubrene molecule assembles growth on TCB decorative layers, forms the rubrene organic semiconductor layer with high-sequential identical with TCB substrates direction.The electrode evaporation on rubrene semiconductor layer, ultimately forms Organic Thin Film Transistors.Filming performance of the present invention is preferable, easy to operate, of low cost, energy saving, has wide practical use in organic optoelectronic device field.
Description
Technical field
The invention mainly relates to a kind of preparation methods of the crystallinity Organic Thin Film Transistors of crystallinity solvent regulation and control, belong to
Organic optoelectronic technical field.
Background technology
Organic Thin Film Transistors since it is numerous with active layer material and derives from a wealth of sources, the technology of preparing of film it is more and
The advantages such as flexible manufacturing may be implemented in simplicity, of increased attention.For the film system in Organic Thin Film Transistors
It is standby, it is current main using two methods of solution processing film forming and vacuum deposition film forming.Vacuum deposition film build method has film forming equal
It is even, the controllable advantage of thickness, but it is complicated for operation, cost is higher.Although and solution processing film forming it is easy to operate, cost is relatively low,
But it, which forms a film, has amorphism, the film being prepared into needs to be regulated and controled using finishing operations such as annealing, but after regulation and control
The regularity of film is not still high.
To overcome above-mentioned the deficiencies in the prior art, the present invention provides a kind of crystallinity of crystallinity solvent regulation and control is organic thin
The preparation method of film transistor, that is, the method for using solution processing film forming, on the basis of there are commonly solvent such as chloroform solvent
Add a kind of crystallinity solvent 1,3,5- trichloro-benzenes（TCB）, under the regulation and control of crystallinity solvent, make rubrene organic thin-film transistor
Growth becomes orderly from unordered.
Invention content
The present invention is a kind of preparation method of the crystallinity Organic Thin Film Transistors of crystallinity solvent regulation and control, in order to
Overcome the film that solution is processed in film build method amorphous, the problems such as following process processing operation is cumbersome, waste of energy, using
In conventional Solution processing techniques, a kind of crystallinity solvent TCB is added on the basis of there are commonly solvent such as chloroform solvent to be made
The growth of rubrene organic thin-film transistor becomes orderly from unordered.
The present invention is a kind of preparation method of the crystallinity Organic Thin Film Transistors of crystallinity solvent regulation and control.The present invention is this
What sample was realized, such as Fig. 1, the TCB solution of chloroform will be dissolved in by drop coating mode（1）It drips in Si/SiO2Underlay substrate（2）, take advantage of it
Just initially form TCB crystallizations（3）When, the rubrene solution for being dissolved in chloroform solvent is added dropwise（4）.Along with chloroform solvent（5）Wave
Hair, TCB can be initially formed more polycrystalline, form one layer of uniform directive substrate modification layer on the insulating layer（6）.Rubrene point
Son（7）Assemble growth on TCB decorative layers, it is organic to form the rubrene with high-sequential identical with TCB substrates direction
Semiconductor layer（8）.Finally by the method for vapor deposition, the electrode evaporation on the organic semiconductor layer of formation（9）, form a kind of crystallization
Property solvent regulation and control crystallinity Organic Thin Film Transistors.
The present invention can obtain the rubrene semiconductor layer with high-sequential by solwution method, and filming performance is preferable,
Organic molecule aligned orderly improves the efficiency of Organic Thin Film Transistors, saves a large amount of time and the energy.And used in the present invention
Instrument and equipment is simple, operating process is easy, at low cost, has wide practical use in organic optoelectronic device field.
Description of the drawings
Fig. 1 is the organic semiconductor layer growth schematic diagram of the Organic Thin Film Transistors of crystallinity solvent regulation and control.
Specific implementation mode
By the Si/SiO that size is the cm of 1.5 cm × 1.52Underlay substrate（2）First wiped with the cotton balls soaked by acetone soln
It wipes, is rinsed with acetone soln after wiping, then wiped with the cotton balls soaked by ethanol solution, rinsed with ethanol solution after wiping, then
It is clean with distilled water flushing.The Si/SiO that will have been rinsed2Underlay substrate（2）Surface moisture is dried up using nitrogen, is put in baking oven
It is dried at a temperature of 120 DEG C.The Si/SiO handled well2Underlay substrate（2）Take out, by TCB with volume fraction be 1 % ratio
Example is dissolved in chloroform solvent and forms TCB solution（1）In and be added dropwise to Si/SiO2Underlay substrate（2）It is paved with substrate up to solution.15 s
Afterwards, wait for that TCB has just initially formed a small amount of crystallization（3）When, the rubrene solution for being dissolved in chloroform solvent is added dropwise（4）40 μL.Along with chlorine
Imitative solvent（5）Volatilization, TCB first on underlay substrate formed one layer of uniform directive substrate modification layer（6）.Rubrene point
Son（7）Assemble growth on TCB decorative layers, ultimately forms the rubrene with high-sequential identical with TCB substrates direction
Organic semiconductor layer（8）.Finally by the method for vapor deposition, silver electrode is deposited on the organic semiconductor layer of formation（9）120 nm,
Form a kind of crystallinity Organic Thin Film Transistors of crystallinity solvent regulation and control.
Claims (4)
1. a kind of preparation method of crystalline film's transistor of crystallinity solvent regulation and control, it is characterised in that：In Si/SiO2Substrate
Drop coating is dissolved in the crystallinity solvent 1,3,5- trichloro-benzenes of organic solvents, chloroform on substrate（TCB）Solution has just started in drop coating solution
When forming crystallization, drop coating is dissolved in the rubrene solution of organic solvents, chloroform, and with the volatilization of chloroform solvent, TCB can be first in substrate
Continue to crystallize on substrate, form one layer of uniform directive substrate modification layer, rubrene molecule assembles life on TCB decorative layers
It is long, the rubrene organic semiconductor layer with high-sequential identical with TCB substrates direction is formed, by the method for vapor deposition,
The electrode evaporation on the organic semiconductor layer of formation forms a kind of crystallinity Organic Thin Film Transistors of crystallinity solvent regulation and control.
2. a kind of preparation method of crystalline film's transistor of crystallinity solvent regulation and control according to claim 1, special
Sign is：The crystallinity solvent TCB volume fractions for being dissolved in chloroform are 0.5% ~ 1%.
3. a kind of preparation method of crystalline film's transistor of crystallinity solvent regulation and control according to claim 1, special
Sign is：The crystallinity that drop coating is dissolved in the time of the rubrene solution of organic solvents, chloroform to be dissolved in organic solvents, chloroform in painting is molten
10 ~ 30 s after agent TCB solution.
4. a kind of preparation method of crystalline film's transistor of crystallinity solvent regulation and control according to claim 1, special
Sign is：Electrode evaporation thickness is 100 ~ 150 nm on the organic semiconductor layer of formation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810177328.9A CN108417715A (en) | 2018-03-05 | 2018-03-05 | A kind of preparation method of the crystallinity Organic Thin Film Transistors of crystallinity solvent regulation and control |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810177328.9A CN108417715A (en) | 2018-03-05 | 2018-03-05 | A kind of preparation method of the crystallinity Organic Thin Film Transistors of crystallinity solvent regulation and control |
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| CN108417715A true CN108417715A (en) | 2018-08-17 |
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| CN201810177328.9A Pending CN108417715A (en) | 2018-03-05 | 2018-03-05 | A kind of preparation method of the crystallinity Organic Thin Film Transistors of crystallinity solvent regulation and control |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113380953A (en) * | 2021-07-05 | 2021-09-10 | 苏州大学 | Ultraviolet light transistor based on organic crystalline heterojunction and preparation method thereof |
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| US20070252229A1 (en) * | 2006-04-26 | 2007-11-01 | Masaaki Fujimori | Field Effect Transistor and Manufacturing Method Thereof |
| US20090194763A1 (en) * | 2006-06-07 | 2009-08-06 | Panasonic Corporation | Semiconductor element, method for manufacturing the semiconductor element, electronic device and method for manufacturing the electronic device |
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2018
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| US20090194763A1 (en) * | 2006-06-07 | 2009-08-06 | Panasonic Corporation | Semiconductor element, method for manufacturing the semiconductor element, electronic device and method for manufacturing the electronic device |
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| WO2013187275A1 (en) * | 2012-06-12 | 2013-12-19 | 株式会社ダイセル | Solvent or solvent composition for organic transistor production |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113380953A (en) * | 2021-07-05 | 2021-09-10 | 苏州大学 | Ultraviolet light transistor based on organic crystalline heterojunction and preparation method thereof |
| CN113380953B (en) * | 2021-07-05 | 2022-08-30 | 苏州大学 | Ultraviolet light transistor based on organic crystalline heterojunction and preparation method thereof |
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Application publication date: 20180817 |