CN108417698A - Quantum dot packaging body and preparation method thereof, light-emitting device and display device - Google Patents

Quantum dot packaging body and preparation method thereof, light-emitting device and display device Download PDF

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Publication number
CN108417698A
CN108417698A CN201810352560.1A CN201810352560A CN108417698A CN 108417698 A CN108417698 A CN 108417698A CN 201810352560 A CN201810352560 A CN 201810352560A CN 108417698 A CN108417698 A CN 108417698A
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China
Prior art keywords
quantum dot
packaging body
light
microstructured bodies
dot packaging
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CN201810352560.1A
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Chinese (zh)
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CN108417698B (en
Inventor
王允军
方龙
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Suzhou Xingshuo Nanotech Co Ltd
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Suzhou Xingshuo Nanotech Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Abstract

The application provides a kind of quantum dot packaging body, including microstructured bodies and the quantum dot being dispersed in the microstructured bodies, and the quantum dot packaging body further includes the Parylene material layer being arranged on the microstructured bodies surface.By the quantum dot packaging body of the application, quantum dot has better stability, can preferably be applied in display or lighting apparatus.Disclosed herein as well is a kind of light-emitting device and display device and the preparation methods of quantum dot packaging body.

Description

Quantum dot packaging body and preparation method thereof, light-emitting device and display device
The cross-application of related application
The application be on July 6th, 2016 applying date, application No. is " 201610522581.4 ", entitled " quantum The divisional application of the Chinese invention patent application of point packaging body and preparation method thereof, light-emitting device and display device ".
Technical field
This application involves a kind of quantum dot packaging bodies and preparation method thereof.The application further relates to a kind of light-emitting device and display Device.
Background technology
Quanta point material inspires the green light of subband and red by absorbing the blue light or ultraviolet light of subband Light can effectively improve the colour gamut of backlight module, meet the needs of high colour gamut LCD TV.Compared to more existing fluorescent powder Speech, quantum dot have many advantages, as particle size is controllable, be uniformly dispersed, excite transformation efficiency height, stablize and light efficiency is higher.
Due to quantum dot easily by aqueous vapor and oxygen influenced or the influence of high temperature and go bad, the stability problem of quantum dot It is a key factor for restricting quantum dot industrialization.In view of the above technical problems, it is necessary to quantum dot layer and light guide plate In conjunction with being further improved.
Invention content
Technical problems to be solved in this application are：A kind of quantum dot packaging body is provided, so that quantum dot is had preferably steady It is qualitative, it can preferably be applied in display or lighting apparatus.
This application provides a kind of quantum dot packaging body, including microstructured bodies and the quantum that is dispersed in the microstructured bodies Point, the quantum dot packaging body further include the Parylene material layer being arranged on the microstructured bodies surface.
Preferably, the particle size range of the microstructured bodies is 0.5 micron -1000 microns.
Preferably, the thickness range of the Parylene material layer is 0.1 micron -100 microns.
Preferably, the microstructured bodies are membranaceous, microspheroidal or rodlike.
Preferably, the microstructured bodies include one kind in silicon dioxide microsphere, polystyrene microsphere.
Preferably, the microstructured bodies are nucleocapsid, and the quantum dot is dispersed in the core.
Preferably, the core is polystyrene microsphere, and the shell is silicon dioxide layer.
Present invention also provides a kind of light-emitting devices, include the wavelength convert of light-emitting component and the neighbouring light-emitting component Layer, the wavelength conversion layer includes quantum dot packaging body as described above.
Preferably, the light-emitting component includes blue light-emitting diode, and the wavelength conversion layer includes being dispersed with the amount The transparent polymer material of son point packaging body.
Present invention also provides a kind of display device, including display module and backlight module, the backlight module includes such as The upper quantum dot packaging body.
Present invention also provides a kind of preparation methods of quantum dot packaging body, include the following steps：It is heavy using vacuum gas-phase Long-pending method forms Parylene material layer on the microstructured bodies surface comprising quantum dot.
Preferably, the preparation method includes step：The microstructured bodies are sprayed in the equipment of vacuum vapor deposition.
Preferably, the preparation method includes step：The microstructured bodies are stirred in the equipment of vacuum vapor deposition.
Compared with prior art, the application has the advantages that：By the quantum dot packaging body of the application, can obtain To stable quantum dot powder, can be encapsulated in light emitting diode.Using the application quantum dot packaging body light-emitting device and Display device all has the higher service life.The preparation method of the application is slightly improved on existing coating technique, it is easy to operate can Row.
Description of the drawings
Fig. 1 is a kind of schematic diagram of specific implementation mode of quantum dot packaging body in the application；
Fig. 2 is the concrete structure schematic diagram of Parylene material layer in the application；
Fig. 3 is a kind of schematic diagram of specific implementation mode of quantum dot packaging body in the application；
Fig. 4 is a kind of schematic diagram of specific implementation mode of light-emitting device in the application；
Fig. 5 is a kind of schematic diagram of specific implementation mode of light-emitting device in the application；
Fig. 6 is a kind of schematic diagram of specific implementation mode of display device in the application.
Specific implementation mode
Below in conjunction with the application embodiment, technical solutions in the embodiments of the present application is described in detail.It answers It is noted that described embodiment is only a part of embodiment of the application, rather than whole embodiments.
This application discloses a kind of quantum dot packaging body 100, including microstructured bodies 102 and it is dispersed in microstructured bodies 102 Quantum dot 104, further include the Parylene material layer 106 being arranged on 102 surface of microstructured bodies.Quantum dot packaging body 100 is core Shell structure, outermost layer are Parylene material layer 106.Parylene material layer 106 and microstructured bodies 102 are transparent, quantum dots 104 It is stimulated outside the 106 directive quantum dot packaging body 100 of permeable microstructured bodies 102 and Parylene material layer that shines of generation.
Parylene material layer 106 is deposited on the surface of microstructured bodies 102 by way of vacuum vapor deposition.Parylene material The purpose of the bed of material 106 is the quantum dot 104 that encapsulation is dispersed in microstructured bodies 102, makes 104 oxygen barrier water proof of quantum dot.Parylene Material is a series of general designation to unique high polymers, including but not limited to Parylene N, Parylene C, Parylene D、Parylene HT.The molecular structural formula of above-mentioned four kinds of Parylene materials is as shown in Figure 2.Preferably, Parylene material layer 106 Including Parylene HT materials.The thickness range of Parylene material layer 106 is 0.1 micron -100 microns, preferred scope 0.5 - 10 microns of micron.
The particle size range of the microstructured bodies 102 of the application is 0.5 micron -1000 microns.Preferably, microstructured bodies 102 wrap Include one kind in polystyrene microsphere, silicon dioxide microsphere.Microstructured bodies 102 are membranaceous, microspheroidal or rodlike, correspondingly, Quantum dot packaging body 100 is also membranaceous, microspheroidal or rodlike.In one preferred embodiment, microstructured bodies 102 are core Shell structure, quantum dot 104 are dispersed in core.In a specific embodiment, core is polystyrene microsphere 108, and shell is titanium dioxide Silicon layer 110, as shown in Figure 3.Certainly, microstructured bodies 102 material composition be not limited thereto, also include it is other being capable of dispersion amount The high molecular material of son point 104.
Quantum dot 104 includes II races-Group VIA compound, IV races-Group VIA compound, III group-VA compounds of group, I races- At least one of Group VIA compound.The structure of quantum dot 104 includes more with mononuclear structure, core-single layer shell structure and core- One kind in layer shell structure.Preferably, I races element includes including from by least one of copper, silver group element, II races element At least one of zinc, cadmium, mercury element, group-III element include at least one of aluminium, gallium, indium element, and IV races element includes At least one of silicon, germanium, tin, lead element, VA races element include at least one of nitrogen, phosphorus, arsenic element, Group VIA element packet Include at least one of sulphur, selenium, tellurium element.The quantum dot 104 of the application further includes the quantum dot of perovskite structure.The application's Quantum dot further includes the semiconductor nanocrystal of the one or more transition-metal cations of chemical doping, the transition metal sun of doping Ion includes Mn2+、Cu2+、Co2+Plasma.In a preferred embodiment, the quantum dot 104 of the application includes but not limited to CdS, CdSe, CdS/ZnS, CdSe/ZnS, CdSe/CdS/ZnS, InP, InP/ZnS or ZnSe/ZnS.The group of quantum dot 104 It is unrestricted at form, can be doped or non-doped quantum dot.
In one preferred embodiment, it is dispersed with red quantum dot in microstructured bodies 102.It is preferred real at another It applies in mode, green quantum dot is dispersed in microstructured bodies 102.In another preferred embodiment, in microstructured bodies 102 It is dispersed with red quantum dot and green quantum dot.Quantum dot packaging body 100 can be as needed, adjusts in microstructured bodies 102 Quantum dot type.
The quantum dot packaging body 100 of the application can form the stable solid state powder with fluorescence property, can be applied to each Kind light-emitting device, display device.This application discloses a kind of light-emitting devices, including light-emitting component 114 and neighbouring light-emitting component 114 Quantum dot packaging body 100.
In one preferred embodiment, this application discloses a kind of light emitting diodes, as shown in figure 4, including substrate 112, light-emitting component 114 above substrate 112, the encapsulating material 116 being encapsulated in above light-emitting component 114 and setting are set Wavelength conversion layer 118 above encapsulating material 116.Wavelength conversion layer 118 includes evenly dispersed having quantum dot packaging body 100 Shadowless glue material 119.Quantum dot packaging body 100 can be divided into red quantum dot packaging body, amount of green color according to quantum dot type difference Son point packaging body and blue quantum dot packaging body.In a specific embodiment, light emitting diode sends out blue light, wavelength conversion layer It is evenly dispersed in 118 to have red quantum dot packaging body and green quantum dot packaging body.
In one preferred embodiment, this application discloses a kind of light emitting diodes, as shown in figure 5, including substrate The encapsulating material 116 that 112, light-emitting component 114 above substrate 112 is set and be encapsulated in above light-emitting component 114.Encapsulation It is evenly dispersed in material 116 to have quantum dot packaging body 100.Encapsulating material 116 includes but not limited to silica gel material.Quantum dot encapsulates Body 100 can be divided into red quantum dot packaging body, green quantum dot packaging body and blue quantum dot envelope according to quantum dot type difference Fill body.In a specific embodiment, light emitting diode sends out blue light, evenly dispersed in encapsulating material 116 to have red quantum dot Packaging body and green quantum dot packaging body.
In one preferred embodiment, this application discloses a kind of light emitting diodes, including substrate 112, setting to exist The light-emitting component 114 of 112 top of substrate and the encapsulating material 116 for being encapsulated in 114 top of light-emitting component.In encapsulating material 116 It is evenly dispersed to have green quantum dot packaging body 100 and red fluorescence powder material.
In one preferred embodiment, this application discloses a kind of display devices, as shown in fig. 6, including LED light source 122, light guide plate 124, reflecting element 126 and display module 128.Reflecting element 126 is arranged in bottom surface of light guide plate, light guide plate 124 Further include at least one optical diaphragm 130 between display module 128.LED light source includes light-emitting component 114 and is encapsulated in hair The encapsulating material 116 of 114 top of optical element.It is evenly dispersed in encapsulating material 116 to have quantum dot packaging body 100.Light-emitting component 114 For light emitting diode.In a specific embodiment, LED light source sends out blue light, evenly dispersed in encapsulating material 116 to have amount of red Son point packaging body and green quantum dot packaging body.
Disclosed herein as well is a kind of preparation methods of quantum dot packaging body, include the following steps：It is heavy using vacuum gas-phase Long-pending method forms Parylene material layer 106 on 102 surface of microstructured bodies comprising quantum dot 104.
In one preferred embodiment, the preparation method of quantum dot packaging body 100 includes the following steps：It 1) will be to two The heating vaporization of toluene cyclic dimer；2) Pintsch process generates diradical gas；3) diradical gas is imported and is formed a film Room, quantum dot packaging body is dispersed in film forming room, and diradical gas forms Parylene material on 100 surface of quantum dot packaging body Layer 106.Preferably, it is provided with flusher in film forming room, the microstructured bodies is sprayed in film forming room.Preferably, it forms a film Microstructured bodies 102 are stirred in room, it is made to be more easy to contact film forming with diradical gas.
Although inventor has done more detailed elaboration to the technical solution of the application and has enumerated, it should be understood that for For those skilled in the art, above-described embodiment is modified and/or the flexible or equivalent alternative solution of use is obvious , cannot all be detached from the essence of the application spirit, the term occurred in the application be used for elaboration to technical scheme and Understand, the limitation to the application can not be constituted.

Claims (10)

1. a kind of quantum dot packaging body, including microstructured bodies and the quantum dot being dispersed in the microstructured bodies, the quantum dot Packaging body further includes the Parylene material layer being arranged on the microstructured bodies surface.
2. quantum dot packaging body according to claim 1, which is characterized in that the particle size range of the microstructured bodies is 0.5 - 1000 microns of micron.
3. quantum dot packaging body according to claim 1, which is characterized in that the thickness range of the Parylene material layer is 0.1 micron -100 microns.
4. quantum dot packaging body according to claim 1, which is characterized in that the microstructured bodies include that silica is micro- One kind in ball, polystyrene microsphere.
5. quantum dot packaging body according to claim 1, which is characterized in that the microstructured bodies are nucleocapsid, described Quantum dot is dispersed in the core；
Preferably, the core is polystyrene microsphere, and the shell is silicon dioxide layer.
6. a kind of light-emitting device includes the wavelength conversion layer of light-emitting component and the neighbouring light-emitting component, the wavelength conversion layer Including any quantum dot packaging body in claim 1-5；
The light-emitting component includes blue light-emitting diode, and the wavelength conversion layer includes being dispersed with the quantum dot packaging body Transparent polymer material.
7. a kind of display device, including display module and backlight module, which is characterized in that the backlight module includes claim Any quantum dot packaging body in 1-6.
8. a kind of preparation method of quantum dot packaging body, which is characterized in that include the following steps：Using the side of vacuum vapor deposition Method forms Parylene material layer on the microstructured bodies surface comprising quantum dot.
9. preparation method according to claim 8, which is characterized in that the preparation method includes step：By micro- knot Structure body is sprayed in the equipment of vacuum vapor deposition.
10. preparation method according to claim 8, which is characterized in that the preparation method includes step：In vacuum gas-phase The microstructured bodies are stirred in the equipment of deposition.
CN201810352560.1A 2016-07-06 2016-07-06 Quantum dot package, preparation method thereof, light-emitting device and display device Active CN108417698B (en)

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CN109054809A (en) * 2018-08-31 2018-12-21 苏州星烁纳米科技有限公司 A kind of preparation method of perovskite quantum dot compound
CN110212074A (en) * 2019-06-03 2019-09-06 李红云 One kind containing improved optics layer light emitting diode with quantum dots encapsulating structure
CN111849462A (en) * 2020-07-02 2020-10-30 致晶科技（北京）有限公司 Perovskite quantum dot optical composite film and application thereof

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CN107017325B (en) * 2015-11-30 2020-06-23 隆达电子股份有限公司 Quantum dot composite material and manufacturing method and application thereof
CN106653979A (en) * 2016-12-27 2017-05-10 左洪波 Fabrication method of high-efficiency Q-LED package structure
CN106905954A (en) * 2017-02-22 2017-06-30 苏州星烁纳米科技有限公司 Quantum dot microsphere of hydrotalcite cladding and preparation method thereof
CN108281530A (en) * 2018-01-31 2018-07-13 惠州市华星光电技术有限公司 A kind of quantum dot LED, backlight module and display device
CN110295045B (en) * 2018-03-23 2022-03-15 陈学仕 High efficiency light conversion material
CN111048654B (en) 2018-10-12 2021-10-22 财团法人工业技术研究院 Photoelectric element packaging body

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CN102986032A (en) * 2010-06-17 2013-03-20 邱罗利士公司 Light-emitting structure and a method for fabricating the same
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CN102986032A (en) * 2010-06-17 2013-03-20 邱罗利士公司 Light-emitting structure and a method for fabricating the same
WO2016046216A1 (en) * 2014-09-23 2016-03-31 Philips Lighting Holding B.V. Encapsulated materials in porous particles

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CN109054809A (en) * 2018-08-31 2018-12-21 苏州星烁纳米科技有限公司 A kind of preparation method of perovskite quantum dot compound
CN110212074A (en) * 2019-06-03 2019-09-06 李红云 One kind containing improved optics layer light emitting diode with quantum dots encapsulating structure
CN111849462A (en) * 2020-07-02 2020-10-30 致晶科技（北京）有限公司 Perovskite quantum dot optical composite film and application thereof
CN111849462B (en) * 2020-07-02 2024-02-20 致晶科技（北京）有限公司 Perovskite quantum dot optical composite film and application thereof

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