CN108416778A - The locking phase thermal imaging chromatography characterization System and method for of integrated circuit microdefect - Google Patents
The locking phase thermal imaging chromatography characterization System and method for of integrated circuit microdefect Download PDFInfo
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- CN108416778A CN108416778A CN201810231062.1A CN201810231062A CN108416778A CN 108416778 A CN108416778 A CN 108416778A CN 201810231062 A CN201810231062 A CN 201810231062A CN 108416778 A CN108416778 A CN 108416778A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T7/00—Image analysis
- G06T7/0002—Inspection of images, e.g. flaw detection
- G06T7/0004—Industrial image inspection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/72—Investigating presence of flaws
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/10—Image acquisition modality
- G06T2207/10048—Infrared image
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T2207/00—Indexing scheme for image analysis or image enhancement
- G06T2207/30—Subject of image; Context of image processing
- G06T2207/30108—Industrial image inspection
- G06T2207/30148—Semiconductor; IC; Wafer
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Abstract
The invention discloses a kind of locking phase thermal imagings of integrated circuit microdefect to chromatograph characterization System and method for, described including medium-wave infrared camera, data collecting card, computer, three-dimensional mobile station and DC power supply, wherein：The Computercontrolled data acquisition card control DC power supply triggering simultaneously carries out amplitude modulation variation to integrated circuit exemplar, and the electric current of frequency-invariant is made to inject；The computer controls data collecting card control medium-wave infrared camera and synchronizes triggering collection image sequence simultaneously；The image sequence of the medium-wave infrared camera acquisition is sent to computer and synchronizes locking phase processing, obtain amplitude figure and the phase diagram under the frequency, the amplitude and phase diagram of different frequency are obtained by changing frequency, the depth tomographic results of integrated circuit exemplar are obtained using the locking phase thermal imaging chromatography software of computer.The present invention is a kind of infrared thermal wave NDT new method for the advantages such as, not damaged, quick, intuitive, accurate, detection area high with signal-to-noise ratio be big and efficient.
Description
Technical field
The invention belongs to microelectronics technology, it is related to locking phase thermal imaging chromatography characterization system and the side of a kind of integrated circuit
Method, the depth information quantification for being suitable for integrated circuit microdefect detect.
Background technology
Microelectronic component plays an increasingly important role in current production requirement, due to design, production and use
Etc. the unreasonable defect for generating different depth and degree of factors, these defects can cause ic failure, therefore detection in time
The defects of integrated circuit is Integrated circuit failure analysis and raising product stability has great importance and marketing
Value.Traditional detection technique has the detection techniques such as scanning electron microscope, industry CT at present, such technology have efficiency low and
The limitations such as equipment cost height limit its promoted extension.
Due to most of microelectronics incipient fault（Such as short circuit, oxide layer or interface damage and latch-up）All
Can cause local heat dissipation, using the non-contact of stable state infrared thermal imaging detection technique, large area and it is quick the advantages that its work(
Rate thermal losses, which carries out image checking, can greatly improve detection efficiency.But lsi unit area degree of integration is more next in recent years
Higher, size and power consumption are lower and lower, and traditional infrared thermal imaging is difficult due to the limitation of the conditions such as temperature resolution, hot horizontal proliferation
Analysis is detected to small size failure or microdefect, while detection information can not provide depth information, is failure analysis, production
Process modification and product stability propose challenge.
Invention content
In order to overcome the above difficulty, the present invention provides a kind of locking phase thermal imagings of integrated circuit microdefect to chromatograph characterization system
System and method obtain the surface temperature or heat wave signal message of different modulating frequency using locking phase thermal imaging detection technique, analyze
The hot physical property of characteristic information bond material and heat wave diffusion theory reach different depth defect chromatography, be it is a kind of have signal-to-noise ratio it is high,
The infrared thermal wave NDT new method for the advantages such as not damaged, quick, intuitive, accurate, detection area is big and efficient, in micro- electricity
The fields such as son are with a wide range of applications.
The purpose of the present invention is what is be achieved through the following technical solutions：
A kind of locking phase thermal imaging of integrated circuit microdefect chromatographs characterization system, including medium-wave infrared camera, has analog signal
Data collecting card, computer, three-dimensional mobile station and the DC power supply with simulation input output function of output function, wherein：
The medium-wave infrared camera is mounted in three-dimensional mobile station；
The medium-wave infrared camera is connected by third signal transmssion line with computer, is adopted with data by fourth signal transmission line
Truck is connected；
The data collecting card is connected by the first signal transmssion line with DC power supply, and second signal transmission line and computer are passed through
It is connected；
The computer transmits data collecting card described in line traffic control by second signal and controls the DC power supply triggering and to institute
It states integrated circuit exemplar and carries out amplitude modulation variation, the electric current of frequency-invariant is made to inject；The computer controls the number simultaneously
Triggering collection image sequence is synchronized according to medium-wave infrared camera described in acquisition card control；The figure of the medium-wave infrared camera acquisition
Handle to obtain amplitude figure under the frequency as sequence by the third signal transmssion line is sent to computer and synchronizes locking phase
And phase diagram, the amplitude and phase diagram of different frequency are obtained by changing frequency, is chromatographed using the locking phase thermal imaging of computer soft
Part obtains the depth tomographic results of the integrated circuit exemplar.
A method of integrated circuit microdefect is analysed into horizontal lock thermal imaging layer using above system and is characterized, including is as follows
Step：
Step（1）：The determination integrated circuit exemplar to be measured, places it on exemplar platform；
Step（2）：The locking phase thermal imaging for opening integrated circuit microdefect chromatographs characterization system；
Step（3）：The positive and negative anodes of DC power supply are connected with the power input positive and negative anodes of integrated circuit exemplar；By medium-wave infrared
Camera is fixed in three-dimensional mobile station, is adjusted the focal length of medium-wave infrared camera and three-dimensional mobile station, is made integrated circuit exemplar in
It is high-visible in the wave infrared camera visual field；
Step（4）：The image that profit is computerizedd control under medium-wave infrared camera acquisition background environment, is carried out for subsequent defective positioning
Prepare；
Step（5）：Computer control locking phase thermal imaging chromatography software sends out modulated signal, logical by data collecting card simulation output
Road exports, it is made to control the simulation input of DC power supply, makes electric current according to modulation rule variation, while in the control of this modulated signal
Wave infrared camera carries out real time image data acquisition；
Step（6）：The image sequence of medium-wave infrared camera acquisition feeds back to computer, and computer acquires medium wave infrared camera
Image sequence is recorded, and is chromatographed software by locking phase thermal imaging and carried out image real time transfer and signal extraction, and then is carried out
Genlock operation obtains amplitude figure and phase diagram Δφ 1；
Step（7）：Change modulated signal by computer, repeats step（5）Step（6）, obtain amplitude figure under the frequency with
Phase diagram Δφ 2；
Step（8）：Repeat step（7）, obtain the amplitude figure under different frequency and phase diagram Δφ n ；
Step（9）：The thermal physical property parameter of input material, according toObtain different modulating frequency
The diffusion length and detection depth of rate, wherein：dFor depth of defect, Λ is thermal diffusion length,,iFor not
Same modulation number,αFor thermal diffusion coefficient,fFor modulating frequency；In conjunction with step（4）The background image of acquisition utilizes locking phase thermal imaging
Chromatography software handles images above, obtains depth tomographic results and located lateral as a result, so far completing to integrated circuit
The locking phase thermal imaging chromatography characterization of exemplar microdefect.
The invention has the advantages that：
1, the present invention carries out chromatography characterization using locking phase infrared thermal imaging detection technique to integrated circuit microdefect, locking phase it is infrared at
As detection technique effectively extracts faint AC signal using digital lock-in technique（Defect generates）, signal-to-noise ratio is substantially increased, together
When be also one of key technology that this method chromatographs integrated circuit microdefect.
2, the present invention restrained effectively the horizontal proliferation of heat wave, and difference is obtained by the locking phase modulating frequency for changing different
Investigation depth information, achieve the purpose that depth chromatograph, it can be achieved that depth method chromatography detection, for generate technique and failure point
Analysis provides powerful measure.
3, the present invention utilizes electric excitation mode, identical as integrated circuit normal operating conditions excitation, reduces to integrated electricity
The secondary damage on road.
4, the present invention utilizes non-contact imaging detection method, can detect in place, substantially increases detectability and detection is imitated
Rate provides effective ways for large scale integrated circuit microdefect efficient detection.
Description of the drawings
Fig. 1 is the functional block diagram of the locking phase thermal imaging chromatography characterization system of integrated circuit microdefect of the present invention, in figure：1-Y
To platform, 2- medium-wave infrared cameras, 3-Z is to platform, and for 4-X to platform, 5- exemplars platform, 6- exemplars, 7- DC power anodes are defeated
Outlet, 8- DC power cathodes output line, 9- locking phase thermal imagings chromatography software, 10- computers, 11- DC power supplies, 12- first
Signal transmssion line, 13- data collecting cards, 14- second signals transmission line, 15- thirds signal transmssion line, the transmission of 16- fourth signals
Line；
Fig. 2 is that part integrates circuit depth composition and different chip layer phase informations.
Specific implementation mode
Technical scheme of the present invention is further described below in conjunction with the accompanying drawings, however, it is not limited to this, every to this
Inventive technique scheme is modified or replaced equivalently, and without departing from the spirit of the technical scheme of the invention and range, should all be covered
In protection scope of the present invention.
Specific implementation mode one：As shown in Figure 1, the locking phase thermal imaging layer for the integrated circuit microdefect that present embodiment provides
It is soft by three-dimensional mobile station, medium-wave infrared camera 2, exemplar platform 5, integrated circuit exemplar 6, locking phase thermal imaging chromatography to analyse characterization system
Part 9, computer 10, DC power supply 11, DC power anode output line 7, DC power cathode output line 8, signal transmssion line and
Data collecting card 13 is constituted, wherein：
It is provided with exemplar platform 5 and medium-wave infrared camera 2 in the three-dimensional mobile station；
It is provided with integrated circuit exemplar 6 on the exemplar platform 5；
The anode of the integrated circuit exemplar 6 is connected by DC power anode output line 7 with the anode of DC power supply 11, is integrated
The cathode of circuit exemplar 6 is connected by DC power cathode output line 8 with the cathode of DC power supply 11；
The medium-wave infrared camera 2 is connected by third signal transmssion line 15 with computer 10, and fourth signal transmission line 16 is passed through
It is connected with data collecting card 13；
The data collecting card 13 is connected by the first signal transmssion line 12 with DC power supply 11, and second signal transmission line 14 is passed through
It is connected with computer 10；
The computer 10 by second signal transmission line 14 control the data collecting card 13 control the DC power supply 11 touch
It sends out and amplitude modulation variation is carried out to the integrated circuit exemplar 6, the electric current of frequency-invariant is made to inject；The computer 10 is simultaneously
It controls the data collecting card 13 and controls the medium-wave infrared camera 2 and synchronize triggering collection image sequence；The medium wave is red
The image sequence that outer camera 2 acquires, which by the third signal transmssion line 15 is sent to computer 1 and synchronizes locking phase, to be handled
Amplitude figure under to the frequency and phase diagram obtain the amplitude and phase diagram of different frequency by changing frequency, utilize locking phase heat
Imaging chromatography software 9 obtains the depth tomographic results of the integrated circuit exemplar 6.
The locking phase thermal imaging chromatography detecting system of the integrated circuit microdefect of the present invention is to be based on locking phase thermal imaging principle knot
Heat wave basic theory is closed, controlling the generation modulating frequency of data collecting card 13 by second signal transmission line 14 using computer 10 consolidates
Fixed signal（Just/cosine signal or square-wave signal）, which controls DC power supply 11 by the first signal transmssion line 12 makes
For its current strength by modulation rule variation, the electric current of modulation variation injects the heat waste of generation mechanical periodicity after integrated circuit exemplar 6
Consumption, the thermal losses that rejected region generates are higher than normal position generation thermal losses so that medium-wave infrared camera 2 receives signal higher than just
Normal position, and the ambient noises thermal radiation signal frequency such as natural light is mismatched with modulating frequency, is extracted by locking phase Processing Algorithm
6 surface temperature information of integrated circuit exemplar inhibits noise information to reach the pll phase image information under the frequency, passes through change
Modulating frequency can obtain different phase image information, and can calculate thermal diffusion length in conjunction with heat wave basic theories believes with phase
Relationship between breath, and then obtain the information of 6 different depth of integrated circuit exemplar.
Specific implementation mode two：Present embodiments provide for a kind of using system described in specific implementation mode one to integrated electricity
The method that the microdefect on road is characterized into the analysis of horizontal lock thermal imaging layer, the method specific implementation step are as follows：
Step（1）：The determination integrated circuit exemplar 6 to be measured, places it on exemplar platform 5；
Step（2）：The locking phase thermal imaging for opening integrated circuit microdefect chromatographs characterization system, this step includes computer 10, number
According to capture card 13, DC power supply 11, medium-wave infrared camera 2, the equipment such as three-dimensional mobile station are for electric-opening；
Step（3）：DC power anode output line 7 is connect with the anode of integrated circuit exemplar 6, DC power cathode output line
8 connect with the cathode of integrated circuit exemplar 6, and the focal length of adjustment medium-wave infrared camera 2 and three-dimensional mobile station make integrated circuit exemplar
6 is high-visible in 2 visual field of medium-wave infrared camera；
Step（4）：Medium-wave infrared camera 2 is controlled using computer 10 by third signal transmssion line 15 to acquire under background environment
Image is ready for subsequent defective positioning；
Step（5）：Computer 10 controls locking phase thermal imaging chromatography software 9 and sends out modulated signal（Frequencyf 1, amplitudeA）, pass through number
It is exported according to 13 analog output channel of capture card, it is made to control the simulation input of DC power supply 11, electric current is made to become according to modulation rule
Change, while this modulated signal is adopted by triggering 2 progress realtime image data of the control medium-wave infrared of third signal transmssion line 15 camera
Collection；
Step（6）：Computer 10 records the image sequence of medium wave infrared camera 2 by third signal transmssion line 15, and
Software 9 is chromatographed by locking phase thermal imaging and carries out image real time transfer and signal extraction, and then synchronizes locking phase operation, obtains width
Value figure and phase diagram Δφ 1；
Step（7）：Change modulated signal by computer 10（Frequencyf 2, amplitudeA）, repeat step（5）Step（6）, it is somebody's turn to do
Amplitude figure under frequency and phase diagram Δφ 2；
Step（8）：Repeat step（7）, obtain the amplitude figure under different frequency and phase diagram Δφ n , as shown in Figure 2；
Step（9）：Using heat waves, thermal diffusion length Λ meets following relationship：, whereiniFor not
Same modulation number,αFor thermal diffusion coefficient,fFor modulating frequency.Due to heat wave spread unit diffusion length, phase delay π, because
This depth of defectdMeet, by the thermal physical property parameter of input material, can obtain not
With the diffusion length and detection depth of modulating frequency, in conjunction with step（4）The background image of acquisition is chromatographed soft using locking phase thermal imaging
Part 9 handles images above, obtains depth tomographic results and located lateral as a result, so far completing to integrated circuit exemplar
The locking phase thermal imaging chromatography characterization of 6 microdefects.
Claims (2)
1. a kind of locking phase thermal imaging of integrated circuit microdefect chromatographs characterization system, it is characterised in that it is red that the system comprises medium waves
Outer camera, data collecting card, computer, three-dimensional mobile station and DC power supply, wherein：
The medium-wave infrared camera is mounted in three-dimensional mobile station；
The medium-wave infrared camera is connected by third signal transmssion line with computer, is adopted with data by fourth signal transmission line
Truck is connected；
The data collecting card is connected by the first signal transmssion line with DC power supply, and second signal transmission line and computer are passed through
It is connected；
The computer transmits data collecting card described in line traffic control by second signal and controls the DC power supply triggering and to institute
It states integrated circuit exemplar and carries out amplitude modulation variation, the electric current of frequency-invariant is made to inject；The computer controls the number simultaneously
Triggering collection image sequence is synchronized according to medium-wave infrared camera described in acquisition card control；The figure of the medium-wave infrared camera acquisition
Handle to obtain amplitude figure under the frequency as sequence by the third signal transmssion line is sent to computer and synchronizes locking phase
And phase diagram, the amplitude and phase diagram of different frequency are obtained by changing frequency, is chromatographed using the locking phase thermal imaging of computer soft
Part obtains the depth tomographic results of the integrated circuit exemplar.
2. a kind of method that integrated circuit microdefect is characterized into the analysis of horizontal lock thermal imaging layer using system described in claim 1,
It is characterized in that steps are as follows for the method：
Step（1）：The determination integrated circuit exemplar to be measured, places it on exemplar platform；
Step（2）：The locking phase thermal imaging for opening integrated circuit microdefect chromatographs characterization system；
Step（3）：The positive and negative anodes of DC power supply are connected with the power input positive and negative anodes of integrated circuit exemplar；By medium-wave infrared
Camera is fixed in three-dimensional mobile station, is adjusted the focal length of medium-wave infrared camera and three-dimensional mobile station, is made integrated circuit exemplar in
It is high-visible in the wave infrared camera visual field；
Step（4）：The image that profit is computerizedd control under medium-wave infrared camera acquisition background environment, is carried out for subsequent defective positioning
Prepare；
Step（5）：Computer control locking phase thermal imaging chromatography software sends out modulated signal, logical by data collecting card simulation output
Road exports, it is made to control the simulation input of DC power supply, makes electric current according to modulation rule variation, while in the control of this modulated signal
Wave infrared camera carries out real time image data acquisition；
Step（6）：The image sequence of medium-wave infrared camera acquisition feeds back to computer, and computer acquires medium wave infrared camera
Image sequence is recorded, and is chromatographed software by locking phase thermal imaging and carried out image real time transfer and signal extraction, and then is carried out
Genlock operation obtains amplitude figure and phase diagram Δφ 1；
Step（7）：Change modulated signal by computer, repeats step（5）Step（6）, obtain amplitude figure under the frequency with
Phase diagram Δφ 2；
Step（8）：Repeat step（7）, obtain the amplitude figure under different frequency and phase diagram Δφ n ；
Step（9）：The thermal physical property parameter of input material, according toObtain different modulating frequency
Diffusion length and detection depth, wherein：dFor depth of defect, Λ is thermal diffusion length,,iFor difference
Number is modulated,αFor thermal diffusion coefficient,fFor modulating frequency；In conjunction with step（4）The background image of acquisition utilizes locking phase thermal imaging layer
Analysis software handles images above, obtains depth tomographic results and located lateral as a result, so far completing to integrated circuit sample
The locking phase thermal imaging chromatography characterization of part microdefect.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109816654A (en) * | 2019-01-30 | 2019-05-28 | 哈尔滨工业大学 | A kind of solar battery dark field locking phase thermal imaging layering microdefect precisely characterizes System and method for |
| CN111239590A (en) * | 2020-02-24 | 2020-06-05 | 珠海格力电器股份有限公司 | Method and device for positioning electrostatic damage of chip |
| CN114013988A (en) * | 2021-10-28 | 2022-02-08 | 惠州佰维存储科技有限公司 | SSD (solid State disk) transferring method and device, readable storage medium and electronic equipment |
| CN114441598A (en) * | 2022-04-11 | 2022-05-06 | 胜科纳米(苏州)股份有限公司 | 3D stacked and packaged integrated circuit chip and failure positioning method and device thereof |
| CN114674873A (en) * | 2022-03-10 | 2022-06-28 | 哈尔滨工业大学 | Infrared thermal imaging acquisition module, detection system and method, resistance strain gauge adhesion micro-defect detection method and equivalent circuit |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109816654A (en) * | 2019-01-30 | 2019-05-28 | 哈尔滨工业大学 | A kind of solar battery dark field locking phase thermal imaging layering microdefect precisely characterizes System and method for |
| CN109816654B (en) * | 2019-01-30 | 2021-12-17 | 哈尔滨工业大学 | Solar cell dark field phase-locked thermal imaging layered microdefect precise characterization system and method |
| CN111239590A (en) * | 2020-02-24 | 2020-06-05 | 珠海格力电器股份有限公司 | Method and device for positioning electrostatic damage of chip |
| CN111239590B (en) * | 2020-02-24 | 2020-12-04 | 珠海格力电器股份有限公司 | Method and device for positioning electrostatic damage of chip |
| CN114013988A (en) * | 2021-10-28 | 2022-02-08 | 惠州佰维存储科技有限公司 | SSD (solid State disk) transferring method and device, readable storage medium and electronic equipment |
| CN114674873A (en) * | 2022-03-10 | 2022-06-28 | 哈尔滨工业大学 | Infrared thermal imaging acquisition module, detection system and method, resistance strain gauge adhesion micro-defect detection method and equivalent circuit |
| CN114441598A (en) * | 2022-04-11 | 2022-05-06 | 胜科纳米(苏州)股份有限公司 | 3D stacked and packaged integrated circuit chip and failure positioning method and device thereof |
| CN114441598B (en) * | 2022-04-11 | 2022-07-08 | 胜科纳米(苏州)股份有限公司 | 3D stacked and packaged integrated circuit chip and failure positioning method and device thereof |
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Application publication date: 20180817 |