CN108400209B - The production method of epitaxial structure, light emitting diode and epitaxial structure - Google Patents
The production method of epitaxial structure, light emitting diode and epitaxial structure Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 230000004888 barrier function Effects 0.000 claims abstract description 191
- 229910002601 GaN Inorganic materials 0.000 claims description 112
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 112
- -1 aluminium indium nitrogen Chemical compound 0.000 claims description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 41
- 229910052710 silicon Inorganic materials 0.000 claims description 41
- 239000010703 silicon Substances 0.000 claims description 35
- 229910052738 indium Inorganic materials 0.000 claims description 25
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 25
- 230000008021 deposition Effects 0.000 claims description 23
- 229910052782 aluminium Inorganic materials 0.000 claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- 239000004411 aluminium Substances 0.000 claims description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 claims description 2
- 241000720974 Protium Species 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 21
- 238000000151 deposition Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 230000031068 symbiosis, encompassing mutualism through parasitism Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
This application involves the production methods to a kind of epitaxial structure, light emitting diode and epitaxial structure.Epitaxial structure includes that the multiple quantum well layer of epitaxial structure includes quantum well layer and the first quantum barrier layer, and the first quantum barrier layer is formed in the upper surface of quantum well layer, the accounting of accounting the first quantum barrier layer phosphide element of phosphide element in quantum well layer.Lattice mismatch between quantum well layer and the first quantum barrier layer can reduce using this epitaxial structure, to reduce droop effect, improve the luminance of light emitting diode.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of epitaxial structure, light emitting diode and epitaxy junction
The production method of structure.
Background technique
With the development of semiconductor technology, light emitting diode (Light-Emitting Diode, LED) can be sent out as a kind of
The semiconductor electronic component of light is favourably welcome due to the advantages such as its is small in size, low energy consumption, the service life is long, driving voltage is low, uses extensively
In indicator light, display screen etc..
In order to improve the luminous efficiency of LED, LED epitaxial structure, the volume of the epitaxial structure of LED can be set on LED
Sub- well layer is the main luminescent layer of LED, and multiple quantum well layer is formed by quantum well layer and quantum barrier layer alternating growth.
But since there are serious lattice mismatches between quantum well layer and the material of quantum barrier layer, lead to droop effect
Obviously, so that lumination of light emitting diode rate is lower.
Summary of the invention
Based on this, it is necessary to which in view of the above technical problems, providing one kind can reduce droop effect, improve light-emitting diodes
The manufacturing method of the epitaxial structure of pipe luminance, light emitting diode and epitaxial structure.
In a first aspect, a kind of epitaxial structure, the epitaxial structure include:
The multiple quantum well layer of the epitaxial structure includes quantum well layer and the first quantum barrier layer, first quantum barrier layer
It is formed in the upper surface of the quantum well layer；
First quantum barrier layer is the superlattice layer for including indium gallium nitride and gallium nitride, the indium member in the quantum well layer
The accounting of element is greater than the accounting of the phosphide element in first quantum barrier layer.
In the above embodiments, the quantum well layer is gallium-indium nitride layer, and the first quantum barrier layer is indium gallium nitride and nitrogen
The superlattice layer for changing gallium reduces quantum well layer and the since the lattice constant of quantum well layer and first quantum barrier layer is close
Lattice mismatch between one quantum barrier layer improves the luminance of diode to reduce droop effect.
First quantum barrier layer includes M the first superlattice layer of layer from bottom to top in one of the embodiments,；Each institute
Stating the first superlattice layer includes gallium-indium nitride layer and gallium nitride layer；2≤M≤6.
In one of the embodiments, further include: the gallium-indium nitride layer with a thickness of 0.15nm~0.25nm, the nitrogen
Change gallium layer with a thickness of 0.15nm~0.25nm.
The multiple quantum well layer further includes the second quantum barrier layer in one of the embodiments, second quantum barrier layer
It is formed in the upper surface of first quantum barrier layer；
Second quantum barrier layer is the superlattice layer for including aluminium indium nitrogen layer and gallium nitride layer.
In the above embodiments, second quantum barrier layer is the superlattice layer for including aluminium indium nitrogen and gallium nitride, due to
Second quantum barrier layer joined aluminium element, improves the energy rank of the second quantum barrier layer, prevents electronics from overflowing, so that electronics quilt
It is strapped in light emitting region, to reduce droop effect, improves the luminance of light emitting diode.
Second quantum barrier layer includes N the second superlattice layer of layer, Mei Gesuo from bottom to top in one of the embodiments,
Stating the second superlattice layer includes aluminium indium nitrogen layer and gallium nitride layer；5≤N≤15.
In one of the embodiments, the aluminium indium nitrogen layer with a thickness of 0.08nm~0.12nm, the gallium nitride layer
With a thickness of 0.08nm~0.12nm.
The proportion of aluminium element and phosphide element is 0.82:0.18 in the aluminium indium nitrogen layer in one of the embodiments,.
In the above embodiments, the proportion of aluminium indium nitrogen layer aluminium element and phosphide element is 0.82:0.18, aluminium element and phosphide element
Proportion be 0.82:0.18 aluminium indium nitrogen lattice constant and gallium nitride lattice constant it is close, aluminium indium nitrogen layer and gallium nitride layer
Lattice mismatch reduce；To reduce droop effect, the luminance of light emitting diode is improved.
The multiple quantum well layer further includes the upper surface for being formed in second quantum barrier layer in one of the embodiments,
Third quantum barrier layer, the third quantum barrier layer is the gallium nitride layer for including element silicon, and the element silicon accounting is from bottom to top
It is incremented by.
In above-described embodiment, the third quantum barrier layer, the third are formed on second quantum barrier layer upper surface
The atomic quantity of the leading portion element silicon of quantum barrier layer is few, guarantees that crystal quality is preferable, the atomicity quantitative change of back segment element silicon is more, can
The effective electron injection that allows.
Second aspect, the present invention also provides a kind of structure of light emitting diode, the light emitting diode includes described
On the one hand and first aspect any embodiment provides the structure of epitaxial structure.
The beneficial effect of the structure of the light emitting diode of above-mentioned second aspect can be found in times of first aspect and first aspect
The beneficial effect of one embodiment, details are not described herein again.
The third aspect, the present invention also provides a kind of manufacturing methods of epitaxial structure, comprising:
Under 750-830 DEG C of temperature environment, production quantity is deposited in the upper surface of the stress release layer of the epitaxial structure
Sub- well layer；
Under 870-930 DEG C of temperature environment, in the upper surface of the quantum well layer, deposition generates the first quantum barrier layer；Institute
Stating the first quantum barrier layer is the superlattice layer for including indium gallium nitride and gallium nitride, and the accounting of the phosphide element in the quantum well layer is big
The accounting of phosphide element in first quantum barrier layer.
In the above-described embodiments, due to quantum well layer be gallium-indium nitride layer, the first quantum barrier layer be include indium gallium nitride and
The lattice constant of the superlattice layer of gallium nitride, quantum well layer and the first quantum barrier layer is close, and lattice mismatch reduces, to reduce
Droop effect improves the luminance of light emitting diode.
It is described under 870-930 DEG C of temperature environment in one of the embodiments, in the upper surface of the quantum well layer
Deposition generates the first quantum barrier layer, comprising:
Under 870-930 DEG C of temperature environment, the first superlattice layer of N layer is generated from bottom to top；It is each described the first to surpass crystalline substance
Compartment includes gallium-indium nitride layer and gallium nitride layer, and in generating process, phosphide element from the bottom up in the gallium-indium nitride layer
Accounting is decremented to 0% from 20%.
In one of the embodiments, the gallium-indium nitride layer with a thickness of 0.15nm~0.25nm, the gallium nitride layer
With a thickness of 0.15nm~0.25nm.
In one of the embodiments, the method also includes: under 870-930 DEG C of temperature environment, described first
The upper surface deposition of quantum barrier layer generates the second quantum barrier layer；Wherein, second quantum barrier layer be include aluminium indium nitrogen and nitridation
The superlattice layer of gallium.
It is described under 870-930 DEG C of temperature environment in one of the embodiments, in the upper of first quantum barrier layer
Surface deposition generates the second quantum barrier layer, comprising:
Under 870-930 DEG C of temperature environment, the second superlattice layer of M layer is generated from bottom to top, it is each described the second to surpass crystalline substance
Compartment includes aluminium indium nitrogen layer and the gallium nitride layer for mixing silicon.
In above-described embodiment, second quantum barrier layer is the superlattice layer for including aluminium indium nitrogen and gallium nitride, due to described
Aluminium element is added in second quantum barrier layer, so that the energy rank of second quantum barrier layer is improved, prevents electronics from overflowing, so that electronics
It is bound in light emitting region, to reduce droop effect, improves the luminance of light emitting diode.
In one of the embodiments, the aluminium indium nitrogen layer with a thickness of 0.08nm~0.12nm, the nitridation for mixing silicon
Gallium layer with a thickness of 0.08nm~0.12nm.
The proportion of aluminium element and phosphide element is 0.82:0.18 in the aluminium indium nitrogen layer in one of the embodiments,.
In above-described embodiment, since the proportion of aluminium element and phosphide element is 0.82:0.18, aluminium element and indium in aluminium indium nitrogen layer
The proportion of element is that the lattice constant of the aluminium indium nitrogen of 0.82:0.18 and the lattice constant of gallium nitride approach, and lattice mismatch reduces, from
And droop effect is reduced, improve the luminance of light emitting diode.
In one of the embodiments, the method also includes: under hydrogen environment and 870-930 DEG C of temperature environment,
In the upper surface of second quantum barrier layer, deposition generates third quantum barrier layer；Wherein, the third quantum barrier layer be include silicon
The gallium nitride layer of element, and in generating process, in the third quantum barrier layer from bottom to top the element silicon atom number by
0 per cubic centimeter is incremented to 2e+18 per cubic centimeter.
In above-described embodiment, third quantum barrier layer is the gallium nitride layer for including element silicon, and the atom number of element silicon is under
Up it is incremented by, the atomic quantity of the leading portion element silicon of third quantum barrier layer is few, guarantees that crystal quality is preferable, the original of back segment element silicon
Subnumber quantitative change is more, can effectively allow electron injection, has protective effect to quantum well layer.
The density of protium gradually reduces from bottom to top in the hydrogen environment in one of the embodiments,.
In above-described embodiment, due to reducing the remaining hydrogen atom in the cavity of quantum well layer, reduce due to hydrogen
The probability of atom remaining influence quantum well layer phosphide element being incorporated to has protective effect to quantum well layer.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of epitaxial structure in one embodiment；
Fig. 2 is the structural schematic diagram of the epitaxial structure of the prior art；
Fig. 3 is a kind of structural schematic diagram of epitaxial structure in another embodiment；
Fig. 4 is a kind of structural schematic diagram of epitaxial structure in another embodiment；
Fig. 5 is the structural schematic diagram of one embodiment epitaxial structures；
Fig. 6 is a kind of production method of epitaxial structure in one embodiment；
Fig. 7 is a kind of production method of epitaxial structure in another embodiment；
Fig. 8 is a kind of production method of epitaxial structure in another embodiment.
Description of symbols:
10: multiple quantum well layer；
101: quantum well layer；
102: the first quantum barrier layers；
103: the second quantum barrier layers；
104: third quantum barrier layer；
20: substrate；
30: buffer layer；
40:UGaN layers；
50:NGaN layers；
60: stress release layer；
70: multiple quantum well layer；
701: quantum well layer；
702: quantum barrier layer；
80:P type layer；
21: substrate；
31: buffer layer；
41:UGaN layers；
51:NGaN layers；
61: stress release layer；
71: multiple quantum well layer；
711: quantum well layer；
712: the first quantum barrier layers；
713: the second quantum barrier layers；
714: third quantum barrier layer；
81:P type layer.
Specific embodiment
It is with reference to the accompanying drawings and embodiments, right in order to which the objects, technical solutions and advantages of the application are more clearly understood
The application is further elaborated.It should be appreciated that specific embodiment described herein is only used to explain the application, not
For limiting the application.
Epitaxial structure provided by the present application can be applied in light emitting diode, and the epitaxial structure of the application reduces Multiple-quantum
Lattice mismatch in well layer between quantum well layer and quantum barrier layer improves light emitting diode to reduce droop effect
Luminance.
Fig. 1 is a kind of structural schematic diagram for epitaxial structure that one embodiment provides, as shown in Figure 1, the epitaxial structure
Multiple quantum well layer 10 includes quantum well layer 101 and the first quantum barrier layer 102, and the first quantum barrier layer 102 is formed in quantum well layer 101
Upper surface；First quantum barrier layer 102 is the superlattice layer for including indium gallium nitride and gallium nitride, the indium member in quantum well layer 101
The accounting of element is greater than the accounting of the phosphide element in the first quantum barrier layer 102.
In the present embodiment, quantum well layer 101 can be gallium-indium nitride layer, the first quantum barrier layer 102 be indium gallium nitride and
The superlattice layer of gallium nitride, superlattices the interlaminating growth and protect with several nanometers to tens nanometers that be two kinds of different constituent elements
The multilayer film of strict periodicity is held, is in fact exactly the stratiform Fine Composite of particular form.
Since quantum well layer 101 is gallium-indium nitride layer, the first quantum barrier layer 102 is the superlattices of indium gallium nitride and gallium nitride
Layer, so that the lattice constant of quantum well layer 101 and the first quantum barrier layer 102 is close, then quantum well layer 101 and the first quantum barrier layer
102 lattice is adapted to.
It in the present embodiment, can be under 750-830 DEG C of temperature environment, in the upper table of the stress release layer of epitaxial structure
Face deposition generates quantum well layer 101, and quantum well layer 101 is gallium-indium nitride layer；And under 870-930 ° of temperature environment, in quantum
The upper surface deposition of well layer generates the first quantum barrier layer 102.Wherein, the first quantum barrier layer can be for from bottom to top by indium gallium nitride
The superlattice layer alternately produced with gallium nitride.
Fig. 2 is a kind of structural schematic diagram for epitaxial structure that the prior art provides, as shown in Fig. 2, epitaxial structure includes lining
Bottom 20, buffer layer 30, UGaN layer 40, NGaN layer 50, stress release layer 60, multiple quantum well layer 70 and P-type layer 80.As it can be seen that traditional
Epitaxial structure multiple quantum well layer 70 include quantum well layer 701 and quantum barrier layer 702, quantum well layer 701 be gallium-indium nitride layer,
Quantum barrier layer 702 is gallium nitride layer, since indium gallium nitride is different with the molecular structure of gallium nitride, so that quantum well layer 701 and amount
There are serious lattice mismatches between sub- barrier layer 702, obvious so as to cause droop effect.Epitaxial structure in the application includes
Quantum well layer 101 and the first quantum barrier layer 102, quantum well layer 101 are gallium-indium nitride layer, and the first quantum barrier layer 102 is gallium nitride
The superlattice layer of indium and gallium nitride, the phosphide element that the phosphide element accounting in quantum well layer 101 is greater than in the first quantum barrier layer 102 account for
Than, due in the first quantum barrier layer 102 include indium gallium nitride so that in the first quantum barrier layer 102 material lattice constant and amount
The lattice constant of material relatively, reduces the lattice mismatch between quantum well layer and quantum barrier layer in sub- well layer 101, thus
Droop effect is reduced, the luminance of light emitting diode is improved.
Epitaxial structure provided by the embodiments of the present application, multiple quantum well layer 10 include quantum well layer 101 and the first quantum barrier layer
102, the first quantum barrier layer 102 is formed in the upper surface of quantum well layer 101；First quantum barrier layer 102 be include indium gallium nitride and
The superlattice layer of gallium nitride, the accounting of the phosphide element in quantum well layer 101 are greater than accounting for for the phosphide element in the first quantum barrier layer 102
Than the lattice mismatch for reducing quantum well layer 101 and the first quantum barrier layer 102 improves so as to reduce droop effect
The luminance of light emitting diode.
Optionally, in the embodiment shown in fig. 1, the first quantum barrier layer 102 includes the first superlattice layer of M layer from bottom to top；
Each first superlattice layer includes gallium-indium nitride layer and gallium nitride layer；2≤M≤6.
In the present embodiment, in 102 growth course of the first quantum barrier layer, M layers can be generated from bottom to top and the first surpasses crystalline substance
Compartment, each first superlattice layer include gallium-indium nitride layer and gallium nitride layer, are equivalent to gallium-indium nitride layer and gallium nitride layer alternating
Form the first quantum barrier layer 102.Those skilled in the art can select the number of plies of the first superlattice layer, example according to actual needs
Such as, 5 layer of first superlattice layer can be sequentially generated from bottom to top, and each first superlattice layer includes gallium-indium nitride layer and gallium nitride
Layer.During the growth process, one layer of gallium nitride layer, then the upper table in gallium nitride layer can be generated in the upper surface of quantum well layer 101
Face generates one layer of gallium-indium nitride layer, then generates one layer of gallium nitride layer in the upper surface of gallium-indium nitride layer, circuits sequentially, symbiosis is at 5
The first superlattice layer of layer.Alternatively, during the growth process, one layer of gallium-indium nitride layer can be generated in the upper surface of quantum well layer 101,
One layer of gallium nitride layer is generated in the upper surface of gallium-indium nitride layer again, then generates one layer of indium gallium nitride in the upper surface of gallium nitride layer
Layer, circuits sequentially, symbiosis is at 5 layer of first superlattice layer.
Optionally, gallium-indium nitride layer with a thickness of 0.15nm~0.25nm, gallium nitride layer with a thickness of 0.15nm~
0.25nm。
Fig. 3 is a kind of structural schematic diagram for epitaxial structure that another embodiment provides, as shown in figure 3, multiple quantum well layer 10
It further include the second quantum barrier layer 103, the second quantum barrier layer 103 is formed in the upper surface of the first quantum barrier layer 102；Second quantum is built
Layer 103 is the superlattice layer for including aluminium indium nitrogen and gallium nitride.
In the present embodiment, the second quantum barrier layer 103, the second quantum are formed on the upper surface of the first quantum barrier layer 102
Barrier layer 103 is the superlattice layer for including aluminium indium nitrogen and gallium nitride, due to joined aluminium element in the second quantum barrier layer 103, is made
The energy rank for obtaining the second quantum barrier layer 103 is improved, and prevents electronics from overflowing, so that electronics is bound in light emitting region, to reduce
Droop effect improves the luminance of light emitting diode.
Optionally, the phosphide element in the first quantum barrier layer 102 successively decreases from bottom to top, for example, the accounting of phosphide element can be certainly
Under be up reduced to 0% by 20%.
In the present embodiment, quantum well layer 101 is gallium-indium nitride layer, and the second quantum barrier layer 103 is aluminium indium nitrogen and gallium nitride
Superlattice layer, the phosphide element in the first quantum barrier layer 102 successively decreases from bottom to top, in quantum well layer 101 and the second quantum barrier layer
It plays a transition role between 103.
In the present embodiment, life can be deposited in the upper surface of quantum well layer 101 under 870-930 DEG C of temperature environment
It at the first quantum barrier layer 102, keeps under 870-930 DEG C of temperature environment, deposits and generate in the upper surface of the first quantum barrier layer 102
Second quantum barrier layer 103.
Optionally, the second quantum barrier layer 103 includes the second superlattice layer of N layer, each second superlattice layer packet from bottom to top
Include aluminium indium nitrogen layer and gallium nitride layer；5≤N≤15.
In the present embodiment, the second quantum barrier layer 103 may include the second superlattice layer of multilayer, for example, the second quantum is built
Layer 103 may include 10 layer of second superlattice layer from bottom to top, and each second superlattice layer includes aluminium indium nitrogen layer and gallium nitride layer.
During the growth process, one layer of gallium nitride layer, then the upper table in gallium nitride layer can be generated in the upper surface of the first quantum barrier layer 102
Face generates one layer of aluminium indium nitrogen layer, then generates one layer of gallium nitride layer in the upper surface of aluminium indium nitrogen layer, circuits sequentially, and symbiosis is at 10 layers the
Two superlattice layers.Alternatively, during the growth process, one layer of aluminium indium nitrogen layer can be generated in the upper surface of the first quantum barrier layer 102, then
One layer of gallium nitride layer is generated in the upper surface of aluminium indium nitrogen layer, is circuited sequentially, symbiosis is at 10 layer of second superlattice layer.
Optionally, aluminium indium nitrogen layer with a thickness of 0.08nm~0.12nm, mix the gallium nitride layer of silicon with a thickness of 0.08nm~
0.12nm。
Optionally, the proportion of aluminium element and phosphide element is 0.82:0.18 in aluminium indium nitrogen layer.
In the present embodiment, the lattice for the aluminium indium nitrogen that the proportion of aluminium element and phosphide element is 0.82:0.18 in aluminium indium nitrogen layer
The lattice constant of constant and gallium nitride is close, and lattice mismatch reduces, to reduce droop effect, improves light emitting diode
Luminance.
It should be noted that aluminium element and phosphide element can also be using other proportion modes, the application in aluminium indium nitrogen layer
In be not limited thereto.
Fig. 4 is a kind of structural schematic diagram for epitaxial structure that another embodiment provides, as shown in figure 4, multiple quantum well layer 10
Further include the third quantum barrier layer 104 for being formed in the upper surface of the second quantum barrier layer 103, third quantum barrier layer 104 be include silicon
The gallium nitride layer of element.
It in the present embodiment, can be under hydrogen environment and 870-930 DEG C of temperature environment, in the second quantum barrier layer 103
It includes the third quantum barrier layer 104 for mixing the gallium nitride layer of silicon that upper surface generates from bottom to top.
Optionally, the element silicon in third quantum barrier layer 104 is incremented by from bottom to top.
In the present embodiment, element silicon atom number is gradually incremented by third quantum barrier layer 104 from bottom to top, for example, third
Element silicon atom number by 0 per cubic centimeter is incremented to 2e+18 per cubic centimeter to quantum barrier layer 104 from bottom to top.
It should be noted that the atom number of element silicon can also be using other numerical value in third quantum barrier layer 104, this
It is not limited thereto in application.
Epitaxial structure provided by the embodiments of the present application forms third quantum barrier layer on 103 upper surface of the second quantum barrier layer
104, third quantum barrier layer 104 is the gallium nitride layer for including element silicon, and the accounting of element silicon is incremented by from bottom to top, guarantees crystal matter
While measuring preferable, the injection of electronics is not influenced, and there is protective effect to quantum well layer 101.
Fig. 5 is a kind of schematic diagram of epitaxial structure provided by the embodiments of the present application, as shown in figure 5, the epitaxial structure is under
It up successively include substrate 21, buffer layer 31, UGaN layer 41, NGaN layer 51, stress release layer 61, multiple quantum well layer 71 and p-type
Layer 81, wherein each layer of structure in the quantum barrier layer in multiple quantum well layer 71 is referred to above-mentioned Fig. 1, Fig. 3 and Fig. 4 institute
Show embodiment, details are not described herein again.
In the present embodiment, the first quantum barrier layer 712 is formed on the upper surface of quantum well layer 711, quantum well layer 711 is
Gallium-indium nitride layer, the first quantum barrier layer 712 are the superlattice layer of indium gallium nitride and gallium nitride, the crystalline substance of material in quantum well layer 711
The lattice constant of material is close in lattice constant and the first quantum barrier layer 712, reduces between quantum well layer and the first quantum barrier layer
Lattice mismatch improve the luminance of diode to reduce droop effect.
In the present embodiment, the second quantum barrier layer 713, the second quantum are formed on the upper surface of the first quantum barrier layer 712
Barrier layer 713 is the superlattice layer of aluminium indium nitrogen and gallium nitride, due to joined aluminium element in the second quantum barrier layer 713, so that the
The energy rank of two quantum barrier layers 713 is improved, and prevents electronics from overflowing, so that electronics is bound in light emitting region, to reduce droop
Effect improves the luminance of light emitting diode.
In the present embodiment, third quantum barrier layer 714, third quantum are formed on the upper surface of the second quantum barrier layer 713
Well layer 714, third quantum barrier layer 714 are the gallium nitride layer for including element silicon, and the atom number of element silicon is incremented by from bottom to top, the
The atomic quantity of the leading portion element silicon of three quantum barrier layers 714 is few, guarantees that crystal quality is preferable, the atomicity quantitative change of back segment element silicon
It is more, it can effectively allow electron injection, there is protective effect to quantum well layer 711.
The present embodiment also provides a kind of light emitting diode, the epitaxial structure including such as Fig. 1, Fig. 3-Fig. 5 any embodiment.
The present embodiment provides a kind of light emitting diode, epitaxial structure uses any embodiment such as Fig. 1, Fig. 3-Fig. 5, can be with
Droop effect is reduced, the luminance of light emitting diode is improved.
Fig. 6 is a kind of production method for epitaxial structure that one embodiment provides, and the manufacturing method of the epitaxial structure is used for
Epitaxial structure as shown in Figure 1 above is manufactured, as shown in fig. 6, this method comprises:
Step 101, under 750-830 DEG C of temperature environment, stress release layer upper surface deposition generate quantum well layer.
Specifically, depositing and generating in the upper surface of the stress release layer of epitaxial structure under 750-830 DEG C of temperature environment
Quantum well layer, quantum well layer are gallium-indium nitride layer.
Step 102, under 870-930 DEG C of temperature environment, quantum well layer upper surface deposition generate the first quantum build
Layer.
The production method of epitaxial structure provided in this embodiment, under 870-930 DEG C of temperature environment, in quantum well layer
Upper surface deposition generates the first quantum barrier layer, and the first quantum barrier layer is the superlattice layer for including indium gallium nitride and gallium nitride, quantum
The accounting of phosphide element in well layer is greater than the accounting of the phosphide element in the first quantum barrier layer, since quantum well layer is indium gallium nitride
Layer, the first quantum barrier layer is the superlattice layer for including indium gallium nitride and gallium nitride, the lattice of quantum well layer and the first quantum barrier layer
Constant is close, and lattice mismatch reduces, to reduce droop effect, improves the luminance of light emitting diode.
Optionally, on the basis of embodiment shown in Fig. 6, step 102 is " under 870-930 DEG C of temperature environment, in quantum
A kind of possible implementation of the first quantum barrier layer of upper surface deposition generation of well layer " may include: the temperature at 870-930 DEG C
It spends under environment, generates the first superlattice layer of M layer from bottom to top；Each first superlattice layer includes gallium-indium nitride layer and gallium nitride
Layer, and in generating process, the accounting of phosphide element from 20% is decremented to 0% from the bottom up in gallium-indium nitride layer.
For example, generating 5 layer of first superlattice layer from bottom to top under 870-930 DEG C of temperature environment；It is each the first to surpass crystalline substance
Compartment includes gallium-indium nitride layer and gallium nitride layer, and in generating process, the accounting of phosphide element from the bottom up in gallium-indium nitride layer
0% is decremented to from 20%.
Optionally, gallium-indium nitride layer with a thickness of 0.15nm~0.25nm, gallium nitride layer with a thickness of 0.15nm~
0.25nm。
Optionally, on the basis of embodiment as shown in Figure 6, the second quantum barrier layer can also be generated, as shown in fig. 7, should
Method includes:
Step 101, under 750-830 DEG C of temperature environment, epitaxial structure stress release layer upper surface deposit life
At quantum well layer.
Step 102, under 870-930 DEG C of temperature environment, quantum well layer upper surface deposition generate the first quantum build
Layer；First quantum barrier layer is the superlattice layer for including indium gallium nitride and gallium nitride, and the accounting of the phosphide element in quantum well layer is greater than
The accounting of phosphide element in first quantum barrier layer.
Optionally, the phosphide element in the first quantum barrier layer successively decreases from bottom to top, in the present embodiment, in the first quantum barrier layer
The accounting of phosphide element is decremented to 0% by 20%.
Step 103, under 870-930 DEG C of temperature environment, the first quantum barrier layer upper surface deposition generate the second amount
Sub- barrier layer；Wherein, the second quantum barrier layer is the superlattice layer for including aluminium indium nitrogen and gallium nitride.
The production method of the epitaxial structure provided in the present embodiment, under 870-930 DEG C of temperature environment, in the first quantum
The upper surface deposition of barrier layer generates the second quantum barrier layer, since the second quantum barrier layer is the superlattices for including aluminium indium nitrogen and gallium nitride
Layer, due to joined aluminium element in the second quantum barrier layer, so that the energy rank of the second quantum barrier layer is improved, prevents electronics from overflowing,
So that electronics is bound in light emitting region, to reduce droop effect, the luminance of light emitting diode is improved.
Optionally, on the basis of the embodiment shown in fig. 7, step 103 is " under 870-930 DEG C of temperature environment, in quantum
A kind of possible implementation of the second quantum barrier layer of upper surface deposition generation of well layer " may include: the temperature at 870-930 DEG C
It spends under environment, generates the second superlattice layer of N layer from bottom to top；Each first superlattice layer includes aluminium indium nitrogen layer and gallium nitride layer.
Specifically, generating 10 layer of second superlattice layer, Mei Ge from bottom to top under 870-930 DEG C of temperature environment
Two superlattice layers include aluminium indium nitrogen layer and the gallium nitride layer for mixing silicon.
Optionally, aluminium indium nitrogen layer with a thickness of 0.08nm~0.12nm, gallium nitride layer with a thickness of 0.08nm~0.12nm.
Optionally, the proportion of aluminium element and phosphide element is 0.82:0.18 in aluminium indium nitrogen layer.
In the present embodiment, the proportion of aluminium indium nitrogen layer aluminium element and phosphide element is 0.82:0.18, and aluminium element and phosphide element are matched
Lattice constant than the lattice constant of the aluminium indium nitrogen for 0.82:0.18 and gallium nitride is close, the crystalline substance of aluminium indium nitrogen layer and gallium nitride layer
Lattice mismatch reduces；To reduce droop effect, the luminance of light emitting diode is improved.
Optionally, on the basis of embodiment as shown in Figure 7, third quantum barrier layer can also be generated, as shown in figure 8, should
Method includes:
Step 101, under 750-830 DEG C of temperature environment, epitaxial structure stress release layer upper surface deposit life
At quantum well layer.
Step 102, under 870-930 DEG C of temperature environment, quantum well layer upper surface deposition generate the first quantum build
Layer；First quantum barrier layer is the superlattice layer for including indium gallium nitride and gallium nitride, and the accounting of the phosphide element in quantum well layer is greater than
The accounting of phosphide element in first quantum barrier layer.
Step 103, under 870-930 DEG C of temperature environment, the first quantum barrier layer upper surface deposition generate the second amount
Sub- barrier layer；Wherein, the second quantum barrier layer is the superlattice layer for including aluminium indium nitrogen and gallium nitride.
Step 104, under hydrogen environment and 870-930 DEG C of temperature environment, the second quantum barrier layer upper surface deposit
Generate third quantum barrier layer；Wherein, third quantum barrier layer be include the gallium nitride layer of element silicon, and in generating process, third
Element silicon atom number is incremented by from bottom to top in quantum barrier layer.
Optionally, element silicon atom number is incremented to by 0 per cubic centimeter often stands from bottom to top in third quantum barrier layer
Square centimetre 2e+18.
Optionally, third quantum barrier layer is generated under hydrogen environment, and the content of hydrogen is successively decreased from bottom to top.
In the present embodiment, third quantum barrier layer is the gallium nitride layer for including element silicon, and the atom number of element silicon is under
Up it is incremented by, the atomic quantity of the leading portion element silicon of third quantum barrier layer is few, guarantees that crystal quality is preferable, the original of back segment element silicon
Subnumber quantitative change is more, can effectively allow electron injection.
In the present embodiment, third quantum barrier layer is generated under hydrogen environment, and the content of hydrogen is successively decreased from bottom to top, by
In reducing the remaining hydrogen atom in the cavity of quantum well layer, reduce due to hydrogen atom remaining influence quantum well layer indium member
The probability of element being incorporated to has protective effect to quantum well layer.
The production method of the epitaxial structure provided in the present embodiment further includes sequentially forming substrate from bottom to top, buffer layer,
UGaN layers, NGaN layers, stress release layer, multiple quantum well layer and P-type layer form epitaxial structure as shown in Figure 5.
In the present embodiment, using sapphire as substrate, those skilled in the art can more rebush according to actual needs
Bottom materials are also possible to Si substrate or SiC substrate, but are not limited to above-mentioned material.
In the present embodiment, under 500 DEG C~550 DEG C temperature environments, forming a layer thickness on the upper surface of the substrate is
The buffer layer of 20~40nm.
In the present embodiment, under 1100 DEG C of temperature environments, UGaN layers are formed on the upper surface of buffer layer, UGaN layers are
The gallium nitride layer of silicon, thickness about 0.4um~0.6um are not mixed.
In the present embodiment, form NGaN layers on UGaN layers of upper surface, NGaN layers be a layer thickness be 1.3~
The gallium nitride layer including element silicon of 1.6um.
In the present embodiment, stress release layer is formed on UGaN layers of upper surface.Stress release layer include phosphide element and
The gallium nitride layer of element silicon.
In the present embodiment, under 750-830 DEG C of temperature environment, Quantum Well is formed in the upper surface of stress release layer
Layer, quantum well layer is gallium-indium nitride layer, with a thickness of 2-3nm；In the present embodiment, it under 870-930 DEG C of temperature environment, is measuring
Form the first quantum barrier layer on the upper surface of sub- well layer, the first quantum barrier layer can generation M the first superlattices of layer from bottom to top
Layer, each first superlattice layer includes gallium-indium nitride layer and gallium nitride layer, and those skilled in the art can be according to actual needs
The number of plies of the first superlattice layer is selected, for example, 5 layer of first superlattice layer can be sequentially generated from bottom to top, it is each the first to surpass crystalline substance
Compartment includes gallium-indium nitride layer and gallium nitride layer.Wherein in each group of the first superlattice layer gallium-indium nitride layer with a thickness of 0.15nm
~0.25nm, wherein the accounting of phosphide element is decremented to 0% from 20% from bottom to top；Gallium nitride layer with a thickness of 0.15nm~
0.25nm。
In the present embodiment, under 870-930 DEG C of temperature environment, P-type layer is formed on the upper surface of multiple quantum well layer,
P-type layer is the gallium nitride layer for including magnesium elements, with a thickness of 100-120nm.Each technical characteristic of above embodiments can be appointed
The combination of meaning, for simplicity of description, combination not all possible to each technical characteristic in above-described embodiment are all described,
As long as all should be considered as described in this specification however, there is no contradiction in the combination of these technical features.
Above embodiments only express the several embodiments of the application, and the description thereof is more specific and detailed, but can not
Therefore it is construed as limiting the scope of the patent.It should be pointed out that for those of ordinary skill in the art,
Under the premise of not departing from the application design, various modifications and improvements can be made, these belong to the protection scope of the application.
Therefore, the scope of protection shall be subject to the appended claims for the application patent.
Claims (16)
1. a kind of epitaxial structure, which is characterized in that the multiple quantum well layer of the epitaxial structure includes quantum well layer and the first quantum
Barrier layer, first quantum barrier layer are formed in the upper surface of the quantum well layer；
First quantum barrier layer is the superlattice layer for including indium gallium nitride and gallium nitride, the phosphide element in the quantum well layer
Accounting is greater than the accounting of the phosphide element in first quantum barrier layer；
The multiple quantum well layer further includes the second quantum barrier layer, and second quantum barrier layer is formed in first quantum barrier layer
Upper surface；
Second quantum barrier layer is the superlattice layer for including aluminium indium nitrogen layer and gallium nitride layer.
2. epitaxial structure according to claim 1, which is characterized in that first quantum barrier layer includes M layers from bottom to top
First superlattice layer；Each first superlattice layer includes gallium-indium nitride layer and gallium nitride layer；2≤M≤6.
3. epitaxial structure according to claim 2, which is characterized in that the gallium-indium nitride layer with a thickness of 0.15nm~
0.25nm, the gallium nitride layer with a thickness of 0.15nm~0.25nm.
4. epitaxial structure according to claim 1, which is characterized in that second quantum barrier layer includes N layers from bottom to top
Second superlattice layer, each second superlattice layer includes aluminium indium nitrogen layer and gallium nitride layer；5≤N≤15.
5. epitaxial structure according to claim 4, which is characterized in that the aluminium indium nitrogen layer with a thickness of 0.08nm~
0.12nm, the gallium nitride layer with a thickness of 0.08nm~0.12nm.
6. epitaxial structure according to claim 4 or 5, which is characterized in that aluminium element and phosphide element in the aluminium indium nitrogen layer
Proportion be 0.82:0.18.
7. epitaxial structure according to claim 4 or 5, which is characterized in that the multiple quantum well layer further includes being formed in institute
The third quantum barrier layer of the upper surface of the second quantum barrier layer is stated, the third quantum barrier layer is the gallium nitride layer for including element silicon.
8. a kind of light emitting diode, which is characterized in that including such as described in any item epitaxial structures of claim 1-7.
9. a kind of production method of epitaxial structure characterized by comprising
Under 750-830 DEG C of temperature environment, Quantum Well is generated in the upper surface deposition of the stress release layer of the epitaxial structure
Layer；
Under 870-930 DEG C of temperature environment, in the upper surface of the quantum well layer, deposition generates the first quantum barrier layer；Described
One quantum barrier layer is the superlattice layer for including indium gallium nitride and gallium nitride, and the accounting of the phosphide element in the quantum well layer is greater than institute
State the accounting of the phosphide element in the first quantum barrier layer；
Under 870-930 DEG C of temperature environment, in the upper surface of first quantum barrier layer, deposition generates the second quantum barrier layer；Its
In, second quantum barrier layer is the superlattice layer for including aluminium indium nitrogen and gallium nitride.
10. according to the method described in claim 9, it is characterized in that, described under 870-930 DEG C of temperature environment, described
The upper surface deposition of quantum well layer generates the first quantum barrier layer, comprising:
Under 870-930 DEG C of temperature environment, the first superlattice layer of N layer is generated from bottom to top；Each first superlattice layer
Including gallium-indium nitride layer and gallium nitride layer, and in generating process, the accounting of phosphide element from the bottom up in the gallium-indium nitride layer
0% is decremented to from 20%.
11. according to the method described in claim 10, it is characterized in that, the gallium-indium nitride layer with a thickness of 0.15nm~
0.25nm, the gallium nitride layer with a thickness of 0.15nm~0.25nm.
12. according to the method described in claim 9, it is characterized in that, described under 870-930 DEG C of temperature environment, described
The upper surface deposition of first quantum barrier layer generates the second quantum barrier layer, comprising:
Under 870-930 DEG C of temperature environment, the second superlattice layer of M layer, each second superlattice layer are generated from bottom to top
Including aluminium indium nitrogen layer and the gallium nitride layer for mixing silicon.
13. according to the method for claim 12, which is characterized in that the aluminium indium nitrogen layer with a thickness of 0.08nm~
0.12nm, the gallium nitride layer for mixing silicon with a thickness of 0.08nm~0.12nm.
14. method according to claim 12 or 13, which is characterized in that aluminium element and phosphide element in the aluminium indium nitrogen layer
Proportion is 0.82:0.18.
15. according to the method described in claim 9, it is characterized in that, the method also includes:
Under hydrogen environment and 870-930 DEG C of temperature environment, in the upper surface of second quantum barrier layer, deposition generates third
Quantum barrier layer；Wherein, the third quantum barrier layer be include the gallium nitride layer of element silicon, and in generating process, the third
The element silicon atom number by 0 per cubic centimeter is incremented to 2e+18 per cubic centimeter from bottom to top in quantum barrier layer.
16. according to the method for claim 15, which is characterized in that the density of protium is from bottom to top in the hydrogen environment
It gradually reduces.
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| CN103972342A (en) * | 2013-01-25 | 2014-08-06 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting component |
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