CN108396288B - Ultra-wide forbidden band ZrxSn1-xO2Alloy semiconductor epitaxial thin film material, preparation method, application and device thereof - Google Patents
Ultra-wide forbidden band ZrxSn1-xO2Alloy semiconductor epitaxial thin film material, preparation method, application and device thereof Download PDFInfo
- Publication number
- CN108396288B CN108396288B CN201810293770.8A CN201810293770A CN108396288B CN 108396288 B CN108396288 B CN 108396288B CN 201810293770 A CN201810293770 A CN 201810293770A CN 108396288 B CN108396288 B CN 108396288B
- Authority
- CN
- China
- Prior art keywords
- ultra
- thin film
- semiconductor epitaxial
- alloy semiconductor
- film material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 title claims abstract description 78
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000010409 thin film Substances 0.000 title claims description 27
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 38
- 239000000956 alloy Substances 0.000 claims abstract description 38
- 239000000919 ceramic Substances 0.000 claims abstract description 36
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000001514 detection method Methods 0.000 claims abstract description 20
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 14
- 239000010980 sapphire Substances 0.000 claims abstract description 14
- 239000013077 target material Substances 0.000 claims abstract description 14
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000005245 sintering Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 40
- 238000001035 drying Methods 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 11
- 238000000825 ultraviolet detection Methods 0.000 claims description 8
- 238000000498 ball milling Methods 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
- 239000008240 homogeneous mixture Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 4
- 239000013307 optical fiber Substances 0.000 abstract description 4
- 239000011159 matrix material Substances 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 description 18
- 230000008020 evaporation Effects 0.000 description 16
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 10
- 238000002441 X-ray diffraction Methods 0.000 description 9
- 229910052726 zirconium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005086 pumping Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 229910002058 ternary alloy Inorganic materials 0.000 description 4
- 238000000411 transmission spectrum Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- 238000011896 sensitive detection Methods 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000023077 detection of light stimulus Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention belongs to the technical field of semiconductor photoelectric materials and devices, and particularly relates to an ultra-wide forbidden band Zr with adjustable band gapxSn1‑ xO2An alloy semiconductor epitaxial film material, a preparation method thereof and application thereof in deep ultraviolet light detection. The method comprises the following steps: 1) preparing a ceramic target material, wherein the ceramic target material is formed by sintering ceramic blank sheets, and the ceramic blank sheets comprise ZrO2And SnO2(ii) a 2) Depositing the ceramic target material obtained in the step 1) on a c-plane sapphire substrate by adopting a pulse laser deposition method to prepare a growth epitaxial film to obtain the ultra-wide forbidden band ZrxSn1‑xO2The epitaxial film material of the alloy semiconductor, wherein x is 0.01-0.99. In the invention, SnO2As matrix material for the detector and by the reaction of pure SnO2Doping is carried out to adjust the size of the band gap of the optical fiber, so that the band gap of the optical fiber can meet the requirement of optical detection in a deep ultraviolet wavelength band.
Description
Technical Field
The invention belongs to the technical field of semiconductor photoelectric materials and devices, and particularly relates to an ultra-wide forbidden band Zr with adjustable band gapxSn1-xO2An alloy semiconductor epitaxial film material, a preparation method thereof and application thereof in deep ultraviolet light detection.
Background
Ultraviolet detection has extremely important applications in many fields, such as flame detection, missile plume tracking, interplanetary ultraviolet detection, and the like. Of course, many problems are urgently needed to be solved in the field of ultraviolet detection, and the most urgent and most interesting problem is the detection of light in the deep ultraviolet band. Because the wavelength of deep ultraviolet light is less than 280nm, the band gap Eg of the detector material is required to be not less than 4.43 eV; the detector will respond most sensitively to ultraviolet light in this wavelength range only when the band gap of the detector material is not less than 4.43eV, thereby achieving the best detection effect for deep ultraviolet light. Therefore, in order to realize accurate and sensitive detection of deep ultraviolet light waves, detector materials with large forbidden band widths are required, and therefore, third generation semiconductor materials are thought, and the third generation semiconductor materials are most typically characterized by large forbidden band widths, so that the third generation semiconductor materials are also called wide forbidden band semiconductors. SnO2As one of typical representatives of third-generation semiconductor materials, the third-generation semiconductor material has a large intrinsic band gap, the band gap of the third-generation semiconductor material reaches 3.6eV, but the detection requirement of light in a deep ultraviolet band can not be met, so that pure SnO is required2Doping is performed to adjust the size of the band gap thereof. In the present invention, we designed SnO2By introducing an equivalent cation to Sn4 +The partial substitution of (a) forms a ternary alloy system having a band gap of not less than 4.43 eV. To achieve this goal, the solute ion should be a positive tetravalent metal cation with an ionic radius and Sn4+The radius is not greatly different, the band gap of the metal oxide is more than 4.43eV, and the crystal lattice type is similar to SnO2The lattice types of the Zr-is selected from the comprehensive consideration of the factors4+Partially substituted Sn4+(r(Zr4+) 0.8 Angstrom, r (Sn)4+) 0.71 angstrom or twoThe ionic radii are not greatly different; ZrO (ZrO)2Band gap of 5.5-7.8eV, much larger than 4.43eV) to form ZrxSn1-xO2Alloy system and finally proved to be pure SnO through experiments2The zirconium doping can realize the purpose of adjusting the band gap of the alloy to be large.
The ultraviolet light detector is capable of detecting the intensity of ultraviolet light based on the Einstein photoelectric effect. When the photon energy is larger than or equal to the band gap Eg of the detector material, the photon energy is absorbed by electrons in the valence band of the material to jump to the conduction band, and the original localized electrons become non-localized electrons, so that the photon energy can move in the whole crystal material to form a detectable photocurrent. Therefore, when a certain substance with a specific band gap is irradiated by light with a specific wavelength, photoexcitation is generated, so that the carrier concentration is increased, the conductivity is enhanced obviously as the irradiation is stronger, the generated photogenerated current is larger, and the photoelectric characteristic of the substance can be utilized to detect the light radiation. However, in order to achieve accurate and sensitive detection of light waves in a certain wavelength range, the band gap of the detector material cannot be too small, and if the band gap is too small, light in a larger wavelength range is absorbed, so that the intensity of light waves in a certain wavelength band cannot be accurately and sensitively detected. This requires that the band gap of the detector material is not much smaller than the minimum photon energy of the optical band to be detected, i.e. not smaller than 4.43eV for the detector of deep ultraviolet band. In response to this requirement, the present invention is directed to intrinsic SnO2Zr is doped to increase the forbidden bandwidth Eg of the alloy, thereby realizing accurate and sensitive detection of the light wave intensity of the deep ultraviolet wavelength band.
Disclosure of Invention
In order to solve the problem of the current deep ultraviolet detection, the invention provides an ultra-wide forbidden band Zr with adjustable band gapxSn1-xO2Preparation method of alloy semiconductor epitaxial thin film material and application of the solution in ultraviolet light detection, wherein the ultra-wide forbidden band ZrxSn1-xO2The epitaxial film material of alloy semiconductor is prepared through mixing SnO with certain molar ratio2And ZrO2Solid solution synthesis of alloyed ceramicsThe film is grown by a pulsed laser deposition film method.
The technical scheme provided by the invention is as follows:
ultra-wide forbidden band ZrxSn1-xO2The preparation method of the alloy semiconductor epitaxial thin film material comprises the following steps:
1) preparing a ceramic target material, wherein the ceramic target material is formed by sintering ceramic blank sheets, and the ceramic blank sheets contain ZrO2And SnO2；
2) Depositing the ceramic target material obtained in the step 1) on a c-plane sapphire substrate by adopting a pulse laser deposition method to prepare a growth epitaxial film to obtain the ultra-wide forbidden band ZrxSn1-xO2The epitaxial film material of the alloy semiconductor, wherein x is 0.01-0.99.
Preferably, x is 0.05 to 0.99, more preferably, x is 0.05 to 0.30 or x is 0.30 to 0.99.
In the invention, SnO2As a functional layer material of the detector and by pure SnO2Doping is carried out to adjust the size of the band gap of the optical fiber, so that the band gap of the optical fiber can meet the requirement of optical detection of deep ultraviolet bands. The invention selects zirconium as the doping element to successfully prepare ZrxSn1-xO2An alloy semiconductor epitaxial thin film, and Zr was found by analysis of the composition of the thin film4+The solid solubility limit in the alloy is very large, and the infinite solid solution displacement type solid solution alloy system is very likely to be formed, so that the property provides possibility for freely adjusting the size of the alloy band gap in a larger range and also provides possibility for successfully preparing a light detection device responding to ultraviolet rays with shorter wavelength.
Specifically, the step 1) comprises the following steps:
1a) configuration SnO2And ZrO2The initial mixing of the materials;
1b) adding absolute ethyl alcohol into the primary mixed material obtained in the step 1a) for ball milling to obtain a uniformly mixed material;
1c) washing and drying the uniformly mixed material obtained in the step 1b) to obtain SnO2And ZrO2The homogeneous mixture of (a);
1d) SnO obtained in step 1c)2And ZrO2Grinding the uniform mixture, and taking absolute ethyl alcohol as an adhesive in the grinding process to obtain a ceramic blank;
1e) pressing the ceramic blank obtained in the step 1d) into a ceramic blank sheet;
1f) sintering the ceramic green sheet obtained in the step 1e) to obtain the ceramic target.
Specifically, in step 1 f): the sintering temperature of the ceramic blank sheet is 1000-1200 ℃; the sintering time is 3-4 hours.
Specifically, the step 2) comprises the following steps:
2a) carrying out ultrasonic cleaning and drying treatment on the c-surface sapphire substrate;
2b) depositing the ceramic target material obtained in the step 1) on a c-plane sapphire substrate subjected to ultrasonic cleaning and drying treatment by adopting a pulse laser deposition method to prepare a growth epitaxial film, so as to obtain the ultra-wide forbidden band ZrxSn1-xO2The epitaxial film material of the alloy semiconductor, wherein x is 0.01-0.99. Preferably, x is 0.05 to 0.99, more preferably, x is 0.05 to 0.30 or x is 0.30 to 0.99.
Specifically, in step 2 b): the deposition growth temperature of the epitaxial film is 100-700 ℃; the oxygen pressure is 0-5 Pa; the energy of the pulse laser is 150-400 mJ/pulse.
The invention also provides the ultra-wide forbidden band Zr prepared by the preparation methodxSn1-xO2An alloy semiconductor epitaxial thin film material.
The invention adopts zirconium doped SnO2Can relieve SnO2Enhance its response to deep ultraviolet light.
The invention also provides an ultra-wide forbidden band ZrxSn1-xO2The epitaxial film material of the alloy semiconductor is applied as a deep ultraviolet light detection device material.
Furthermore, the material is used as a deep ultraviolet detection device material with the wavelength of 300 nm-220 nm.
The invention also provides a deep ultraviolet detector, which comprises a substrate layer,An ultraviolet photoelectric material layer arranged on the substrate layer and a metal parallel electrode arranged on the ultraviolet photoelectric material layer, wherein the ultraviolet photoelectric material layer is formed by an ultra-wide forbidden band ZrxSn1-xO2An alloy semiconductor epitaxial thin film material is formed. Preferably, the substrate layer is a c-plane sapphire substrate layer.
The preparation method of the ultraviolet light detection device comprises the following steps: putting an ultra-wide forbidden band ZrxSn1-xO2The alloy semiconductor epitaxial thin film material is coated with high-purity metal (aluminum, gold and the like) parallel electrodes by a vacuum evaporation method. Firstly, a film sample is put on a mask plate, high-purity metal powder is put in an evaporation boat and then put in a vacuum chamber of a vacuum evaporation instrument together, and 10 is obtained after the film sample is pumped by a mechanical pump and a molecular pump-4Opening an evaporation source in a high vacuum environment at a Pa level, then steadily and slowly increasing evaporation current, opening an air valve after evaporation is finished, opening a vacuum chamber to take out a sample when the vacuum chamber is equal to the external atmospheric pressure, and then carrying out vacuum packaging on the prepared complete optical detection device;
testing photoelectric performance of the obtained device by using a photoelectric test system, such as a series of performance tests of a volt-ampere characteristic curve, a time current curve, a spectral response and the like of a sample, thereby judging the ultra-wide forbidden band ZrxSn1-xO2The feasibility of the alloy semiconductor epitaxial thin film material for manufacturing an ultraviolet light detection device.
The invention provides an ultra-wide forbidden band ZrxSn1-xO2Besides the growth of the alloy semiconductor epitaxial film material by a pulse laser deposition method, the preparation and growth of the film can be carried out by adopting various preparation methods such as a magnetron sputtering method, an electron beam evaporation method and the like, and the equipment and the operation are simple and convenient, so the invention has very positive significance for successfully solving the technical problem which troubles the ultraviolet light detection field for a long time.
The invention has the beneficial effects that:
the invention provides an ultra-wide forbidden band ZrxSn1-xO2The alloy compound semiconductor epitaxial thin film material has ultra-wide band gap widthThe excellent characteristic of direct photoelectric transition provides an ideal device material for deep ultraviolet detection; the preparation method can adopt various growth preparation methods, the equipment and the operation process are simple and easy to master, the method is suitable for large-scale industrial production, the raw materials for preparing the device are cheap and easy to obtain, and the complete device can be prepared at lower cost, so that the method has extremely important significance for large-scale production and application.
Drawings
FIG. 1 Zr prepared by the present invention with different doping ratiosxSn1-xO2XRD diffraction pattern of epitaxial film.
FIG. 2 shows Zr provided in an embodiment of the present invention0.3Sn0.7O2X-ray diffraction of epitaxial films
And (5) scanning the atlas.
FIG. 3 shows Zr provided in an embodiment of the present invention0.3Sn0.7O2And (3) an X-ray diffraction rocking curve spectrum of the epitaxial film.
FIG. 4 Zr prepared by the present invention with different doping ratiosxSn1-xO2Transmission spectrum of epitaxial thin film.
FIG. 5 Zr prepared by the present invention0.3Sn0.7O2I-T curve diagram of epitaxial film base ultraviolet detecting device.
FIG. 6 shows Zr content of high Zr content prepared by the present invention0.3Sn0.7O2Time current curve of epitaxial film based UV detector.
FIG. 7 shows the Zr content of low Zr prepared by the present invention0.1Sn0.9O2Time current curve of epitaxial film based UV detector.
Detailed Description
The principles and features of this invention are described below in conjunction with examples which are set forth to illustrate, but are not to be construed to limit the scope of the invention.
Example 1
According to Zr0.05Sn0.95O2SnO is weighed respectively according to the doping formula219.1748g、ZrO20.8252g, mixing, pouring the mixed material into a ball mill pot, adding anhydrous ethanol accounting for about 60 percent of the total mass of the powder, putting the ball mill pot into the ball mill pot for ball milling for 8 hours to fully and uniformly mix, washing the material which is fully and uniformly mixed by ball milling, for example, using the anhydrous ethanol, transferring the material into an evaporating dish, drying the material in a drying oven, transferring the mixed material into a mortar after drying, adding the anhydrous ethanol accounting for about 6 percent of the total mass of the powder as an adhesive, fully grinding the material to uniformly bond the powder to form a blank, pressing the blank into a ceramic blank sheet with the thickness of about 2-3mm and the mass of about 10g under the pressure of 4-6MPa by an electromagnetic hydraulic press, sintering the blank sheet in a tube furnace at the temperature of 1100 ℃ for 3 hours, finally, the formed ceramic target is obtained. The epitaxial film is prepared and grown on a c-plane sapphire substrate by a pulse laser deposition method. Firstly cleaning a substrate, respectively and sequentially ultrasonically cleaning the substrate for 15 minutes by using acetone, absolute ethyl alcohol and deionized water, then putting a fired ceramic target material and a cleaned sapphire substrate into a cavity of a pulse laser deposition system, and then respectively pumping vacuum by using a mechanical pump and a molecular pump to obtain 10-4The high vacuum environment of Pa grade, and setting the substrate temperature as 700 ℃, the oxygen pressure as 3Pa, the laser energy as 150-. After the film sample is prepared, an X-ray diffractometer and a spectrometer are used for characterizing the film sample respectively, and an XRD diffraction pattern, a transmission spectrum and a time current curve chart of the film sample are respectively obtained and are respectively shown in attached figures 1 and 4. Finally plating high-purity aluminum parallel electrodes on the prepared film sample by a vacuum evaporation method, firstly putting the film sample on a mask plate, putting a high-purity aluminum block in an evaporation boat, then putting the evaporation boat and the high-purity aluminum block into a vacuum chamber of an evaporation instrument, and obtaining 10 by pumping with a mechanical pump and a molecular pump-4Opening the evaporation source in a high vacuum environment at the Pa level, and then increasing the evaporation rate smoothly and slowlyAnd (3) plating current, opening an air valve after the evaporation is finished, opening the vacuum chamber to take out a sample when the vacuum chamber is equal to the external atmospheric pressure, obtaining a complete ultraviolet light detection device, and testing the photoelectric performance of the device by using a photoelectric test system.
Example 2
According to Zr0.3Sn0.7O2SnO is weighed respectively according to the doping formula214.8102g、ZrO25.1898g, mixing, pouring the mixed material into a ball mill pot, adding absolute ethyl alcohol which accounts for about 60% of the total mass of the powder, putting the ball mill pot into the ball mill pot for ball milling for 8 hours to fully and uniformly mix, washing the material which is fully and uniformly mixed by ball milling, transferring the material into an evaporating dish, drying the material in a drying oven, transferring the mixed material into a mortar after drying, adding absolute ethyl alcohol which accounts for about 6% of the total mass of the powder as an adhesive, fully grinding the material to uniformly bond the powder together to form a blank, pressing the blank into ceramic blank sheets which have the mass of about 10g and the thickness of about 2-3mm under the pressure of 4-6MPa by using an electromagnetic hydraulic press, sintering the blank sheets in a tubular furnace at the temperature of 1100 ℃ for 3 hours, finally, the formed ceramic target is obtained. The epitaxial film is prepared on a c-plane sapphire substrate by a pulse laser deposition method. Firstly cleaning a substrate, respectively and sequentially ultrasonically cleaning the substrate for 15 minutes by using acetone, absolute ethyl alcohol and deionized water, then putting a fired ceramic target material and a cleaned sapphire substrate into a cavity of a pulse laser deposition system, and then respectively pumping vacuum by using a mechanical pump and a molecular pump to obtain 10-4Pa, setting the substrate temperature to 700 ℃, the oxygen pressure to 3Pa, the laser energy to 150-. After the film sample is prepared, an X-ray diffractometer and a spectrometer are used for characterizing the film sample respectively to obtain an XRD diffraction pattern and an XRD of the film sample respectively
The scanning spectrum, XRD rocking curve spectrum and transmission spectrum are respectively shown in figures 1, 2, 3 and 4. Finally plating high-purity aluminum parallel electrodes on the prepared film sample by a vacuum evaporation method, firstly putting the film sample on a mask plate, putting high-purity aluminum powder in an evaporation boat, then putting the evaporation boat and the high-purity aluminum powder into a vacuum chamber of an evaporation instrument, and obtaining 10 by pumping with a mechanical pump and a molecular pump-4Opening an evaporation source in a high vacuum environment at a Pa level, then steadily and slowly increasing evaporation current, opening an air valve after evaporation is finished, opening a vacuum chamber to take out a sample when the vacuum chamber is equal to the external atmospheric pressure to obtain a complete ultraviolet light detection device, and then testing the photoelectric performance and time current curve graph (I-T, see attached figures 5 and 6) of the device by using a photoelectric test system.
The examples of the present invention use ceramic target materials with different doping ratios as sputtering targets to prepare Zr with different doping ratiosxSn1-xO2The alloy semiconductor epitaxial thin film is characterized by XRD (X-ray diffraction) to obtain diffraction patterns, namely, as can be seen from figure 1, except for the characteristic peak of the thin film substrate alumina appearing at about 41 degrees, obvious diffraction peaks appear at about 37 degrees to 38 degrees and 80 degrees, and the two peaks can be determined to be SnO respectively through the accurate comparison of PDF (Portable document Format) cards2The diffraction peaks of the (200) and (400) planes of (2) and no diffraction peaks of other impurity phases appear, and therefore, it can be concluded that: the doping effect of the film samples with different doping ratios in the range of x being 0.05-0.99 is ideal, and Zr is4+Successfully replace Sn4+The spatial grid point location of (a). By XRD
As is evident from the scanning pattern, FIG. 2, ZrxSn1-xO2The thin film is epitaxially grown on a c-plane sapphire substrate. Zr is evident from the XRD rocking curve pattern, i.e. FIG. 3xSn1-xO2The film has a high crystalline quality. The transmission spectra obtained by characterization of these thin film samples by a spectrometer, fig. 4, is evident as dopingThe absorption edge of the film sample is obviously shifted to the short wave direction along with the increase of the concentration, which shows that the Zr is increased along with the increase of the doping concentrationxSn1-xO2The band gap of the alloy is also increasing. From the absorption spectrum, the Zr-free spectrum was obtained by linear extrapolation0.05Sn0.95O2To Zr0.3Sn0.7O2The band gap increases from 4.25eV to 5.2 eV. Finally, the photoelectric performance of the prepared complete detection device is tested by a photoelectric test system, and as can be seen from a time-current curve graph (shown in figure 5), the current value is smaller when no light irradiates, and the current value is increased suddenly when the baffle is opened quickly and the light irradiates the device, the device has a sensitive and quick light response effect and can detect the intensity of deep ultraviolet light.
Doping SnO by zirconium2Can relieve SnO2Enhance its response to deep ultraviolet light. Zr prepared by the invention0.3Sn0.7O2The ternary alloy single crystal film-based ultraviolet detector has high photoresponse sensitivity, particularly has high photoresponse in a deep ultraviolet band, and reaches 1.99A/W, and meanwhile, the photoresponse time in a current rising stage is 0.25 second, and the photoresponse time in a falling stage is 0.5 second, which can be known from a time-current curve diagram 6. Compared with pure SnO2The single crystal thin film based ultraviolet detector of (1) is due to ZrxSn1-xO2The ternary alloy has larger forbidden bandwidth, so the detector prepared by the invention is more suitable for the ultraviolet detection task of deep ultraviolet band, and in addition, pure SnO is subjected to2The resistivity of the detector can be effectively increased by performing the zirconium doping treatment, which is a very favorable factor for the detector, because the increase of the resistivity can effectively reduce the magnitude of dark current in the detector and improve the light detection sensitivity and the detection rate of the detector. The zirconium doping can effectively increase the pure SnO2The resistivity of (2) is due to ZrxSn1-xO2The band gap of the ternary alloy is larger than that of pure SnO2The large band gap of the alloy naturally causes the resistivity of the alloy to be higher than that of pure SnO2Is large; secondly, the zirconium doping can be largeReduced-amplitude pure SnO2The defect concentration in the alloy, such as the number of defects of vacancy oxygen, interstitial tin and the like, thereby effectively reducing the pure SnO2The background carrier concentration originally present due to the defect, such that SnO2The resistivity of (2) is greatly increased. However, the zirconium-doped treatment can greatly reduce the pure SnO2When the number of defects is large, the resistivity can be effectively increased, and the recombination rate of non-equilibrium carriers generated by illumination can be improved. This is because the number of defects is reduced, so that the number of deep level trap centers is reduced, and therefore, electrons and holes are more easily recombined, which can effectively shorten the recovery time of the detector after the illumination is stopped. Also, comparing the current-time response curves of the high zirconium content device (fig. 6) and the low zirconium content device (fig. 7), it can be seen that the larger the zirconium doping concentration, the shorter the current recovery time of the photodetector.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (9)
1. Ultra-wide forbidden band ZrxSn1-xO2The preparation method of the alloy semiconductor epitaxial thin film material is characterized by comprising the following steps of:
1) preparing a ceramic target material, wherein the ceramic target material is formed by sintering ceramic blank sheets, and the ceramic blank sheets contain ZrO2And SnO2；
2) Depositing the ceramic target material obtained in the step 1) on a c-plane sapphire substrate by adopting a pulse laser deposition method to prepare a growth epitaxial film to obtain the ultra-wide forbidden band ZrxSn1-xO2The alloy semiconductor epitaxial film material is characterized in that x is 0.3-0.99, and the deposition growth temperature of an epitaxial film is 100-700 ℃; the oxygen pressure is 0-5 Pa; the energy of the pulse laser is 150-400 mJ/pulse.
2. Ultra-wide bandgap Zr according to claim 1xSn1-xO2The preparation method of the alloy semiconductor epitaxial thin film material is characterized in that the step 1) comprises the following steps:
1a) configuration SnO2And ZrO2The initial mixing of the materials;
1b) adding absolute ethyl alcohol into the primary mixed material obtained in the step 1a) for ball milling to obtain a uniformly mixed material;
1c) washing and drying the uniformly mixed material obtained in the step 1b) to obtain SnO2And ZrO2The homogeneous mixture of (a);
1d) SnO obtained in step 1c)2And ZrO2Grinding the uniform mixture, and taking absolute ethyl alcohol as an adhesive in the grinding process to obtain a ceramic blank; 1e) pressing the ceramic blank obtained in the step 1d) into a ceramic blank sheet;
1f) sintering the ceramic green sheet obtained in the step 1e) to obtain the ceramic target.
3. Ultra-wide bandgap Zr according to claim 2xSn1-xO2The preparation method of the alloy semiconductor epitaxial thin film material is characterized in that in the step 1 f): the sintering temperature of the ceramic blank sheet is 1000-1200 ℃; the sintering time is 3-4 hours.
4. Ultra-wide bandgap Zr according to any of claims 1 to 3xSn1-xO2The preparation method of the alloy semiconductor epitaxial thin film material is characterized in that the step 2) comprises the following steps:
2a) carrying out ultrasonic cleaning and drying treatment on the c-surface sapphire substrate;
2b) depositing the ceramic target material obtained in the step 1) on a c-plane sapphire substrate subjected to ultrasonic cleaning and drying treatment by adopting a pulse laser deposition method to prepare a growth epitaxial film, so as to obtain ZrxSn1-xO2The alloy semiconductor epitaxial thin film material, wherein x is 0.3-0.99.
5. An ultra-wide bandgap Zr according to any of claims 1 to 4xSn1-xO2Preparation method of alloy semiconductor epitaxial thin film material for obtaining ultra-wide bandgap ZrxSn1-xO2An alloy semiconductor epitaxial thin film material.
6. An ultra-wide bandgap Zr according to claim 5xSn1-xO2The application of the alloy semiconductor epitaxial thin film material is characterized in that: as deep ultraviolet detecting device material.
7. Ultra-wide bandgap Zr according to claim 6xSn1-xO2The application of the alloy semiconductor epitaxial thin film material is characterized in that: the material is used as a material of a deep ultraviolet detection device with response wavelength of 300 nm-220 nm.
8. A deep ultraviolet light detection device, characterized by: the ultra-wide forbidden band Zr comprises a substrate layer, an ultraviolet photoelectric material layer arranged on the substrate layer and metal parallel electrodes arranged on the ultraviolet photoelectric material layer, wherein the ultraviolet photoelectric material layer is formed by the ultra-wide forbidden band Zr in the claim 5xSn1-xO2Alloy semiconductor epitaxial thin film material.
9. The deep ultraviolet light detecting device according to claim 8, characterized in that: the substrate layer is a c-plane sapphire substrate layer.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810293770.8A CN108396288B (en) | 2018-03-30 | 2018-03-30 | Ultra-wide forbidden band ZrxSn1-xO2Alloy semiconductor epitaxial thin film material, preparation method, application and device thereof |
| AU2019241284A AU2019241284B2 (en) | 2018-03-30 | 2019-03-28 | Ultra-wide band gap MexSn1-xO2 alloy semiconductor epitaxial thin film material and preparation method therefor, application thereof and device thereof |
| PCT/CN2019/080090 WO2019184979A1 (en) | 2018-03-30 | 2019-03-28 | Ultra-wide band gap mexsn1-xo2 alloy semiconductor epitaxial thin film material and preparation method therefor, application thereof and device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810293770.8A CN108396288B (en) | 2018-03-30 | 2018-03-30 | Ultra-wide forbidden band ZrxSn1-xO2Alloy semiconductor epitaxial thin film material, preparation method, application and device thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108396288A CN108396288A (en) | 2018-08-14 |
| CN108396288B true CN108396288B (en) | 2020-04-24 |
Family
ID=63099569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810293770.8A Active CN108396288B (en) | 2018-03-30 | 2018-03-30 | Ultra-wide forbidden band ZrxSn1-xO2Alloy semiconductor epitaxial thin film material, preparation method, application and device thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108396288B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019184979A1 (en) * | 2018-03-30 | 2019-10-03 | 湖北大学 | Ultra-wide band gap mexsn1-xo2 alloy semiconductor epitaxial thin film material and preparation method therefor, application thereof and device thereof |
| CN109599449B (en) * | 2018-12-06 | 2020-03-24 | 湖北大学 | Non-polar m-plane-based BeMgZnO transparent thin-film solar cell and preparation method thereof |
| CN110323291B (en) * | 2019-04-22 | 2020-07-10 | 湖北大学 | Based on (GaY)2O3High-gain solar-blind ultraviolet detector of amorphous film and preparation method thereof |
| CN111697103A (en) * | 2020-05-29 | 2020-09-22 | 华南理工大学 | Photoelectric detector for paper-based material and solution method preparation thereof |
| CN111910158B (en) * | 2020-08-10 | 2022-06-17 | 湖北大学 | Ultra-wide forbidden band p-type SnO2Film and preparation method thereof |
| CN112176291A (en) * | 2020-10-15 | 2021-01-05 | 湖北大学 | Alloy ultraviolet transparent conductive film and preparation method and application thereof |
| CN114134569B (en) * | 2021-11-30 | 2023-07-25 | 湖北大学 | Cu-SnO 2 Single crystal film, preparation method and application thereof |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7393736B2 (en) * | 2005-08-29 | 2008-07-01 | Micron Technology, Inc. | Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics |
| CN101262040B (en) * | 2008-04-24 | 2010-06-16 | 湘潭大学 | Oxide lanthanon magnetic semiconductor/ferroelectric heterogeneous structure and its making method |
| JP5582530B2 (en) * | 2010-07-21 | 2014-09-03 | 独立行政法人産業技術総合研究所 | Ultraviolet region transmissive transparent conductive film and method for producing the same |
| CN101922024B (en) * | 2010-09-08 | 2011-10-12 | 中南大学 | Light composite electro-catalysis energy-saving anode for non-ferrous metal electro-deposition and preparation method thereof |
| CN103668063A (en) * | 2012-09-20 | 2014-03-26 | 海洋王照明科技股份有限公司 | Conducting film, and preparation method and application thereof |
| CN104677958B (en) * | 2015-02-15 | 2017-10-20 | 南京益得冠电子科技有限公司 | Alcohol sensitive material and semiconductor alcohol sensor |
| CN104790029B (en) * | 2015-04-27 | 2017-06-30 | 湖北大学 | A kind of method for preparing SnO epitaxial films |
| CN105734491A (en) * | 2016-03-08 | 2016-07-06 | 湖北大学 | BeZnOS compound semiconductor material as well as preparation method and application thereof |
| CN107419333B (en) * | 2017-07-07 | 2019-10-01 | 山东大学 | A kind of preparation method of high mobility niobium doped stannum oxide monocrystal thin films |
-
2018
- 2018-03-30 CN CN201810293770.8A patent/CN108396288B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN108396288A (en) | 2018-08-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108396288B (en) | Ultra-wide forbidden band ZrxSn1-xO2Alloy semiconductor epitaxial thin film material, preparation method, application and device thereof | |
| Deng et al. | Wafer-scale heterogeneous integration of self-powered lead-free metal halide UV photodetectors with ultrahigh stability and homogeneity | |
| Chu et al. | Fabrication and characterization of Ni-Doped ZnO nanorod arrays for UV photodetector application | |
| Shewale et al. | Structural, surface morphological and UV photodetection properties of pulsed laser deposited Mg-doped ZnO nanorods: effect of growth time | |
| You et al. | Vertically aligned ZnO/Ga 2 O 3 core/shell nanowire arrays as self-driven superior sensitivity solar-blind photodetectors | |
| Zhao et al. | Growth and characterization of α-phase Ga2− xSnxO3 thin films for solar-blind ultraviolet applications | |
| US20200287067A1 (en) | (GaMe)2O3 ternary alloy material, its preparation method and application in solar-blind ultraviolet photodetector | |
| Kumar et al. | Enhanced ultraviolet photo-response in Dy doped ZnO thin film | |
| Viet Pham et al. | Photocarrier generation in CuxO thin films deposited by radio frequency sputtering | |
| Wang et al. | The effect of Mg and Al co-doping on the structural and photoelectric properties of ZnO thin film | |
| Shewale et al. | UV sensitive pulsed laser deposited ZnO thin films: Influence of growth temperature | |
| CN111293181B (en) | MSM type alpha-Ga2O3Basic solar blind ultraviolet detector | |
| Balestrieri et al. | Efficient energy transfer from ZnO to Nd 3+ ions in Nd-doped ZnO films deposited by magnetron reactive sputtering | |
| Hunashimarad et al. | ZnO: Ca MSM ultraviolet photodetectors | |
| Chen et al. | High responsivity self-powered DUV photodetectors based on β-Ga2O3/GaN heterogeneous PN junctions | |
| Devi et al. | Improved photodetection capabilities of Ag@ CeO2 Nanorod composite array using GLAD technique | |
| Shewale et al. | Physical and UV photodetection properties of pulsed laser deposited Mg0. 05Zn0. 95O thin films: Effect of oxygen pressure | |
| Feng et al. | Performance of metal-semiconductor-metal structured diamond deep-ultraviolet photodetector with a large active area | |
| CN113921627A (en) | (In)xGa1-x）2O3Solar blind ultraviolet photoelectric detector and preparation method thereof | |
| Rahal et al. | Behavior study of the nanostructured zn1-xcdxo (0≤ x≤ 0.1) semiconductor thin films deposited onto silicon substrate by dip-coating method | |
| Gupta et al. | Synthesis and characterization of all-inorganic (CsPbBr 3) perovskite single crystals | |
| CN108546918B (en) | Ultra-wide bandgap oxide alloy semiconductor epitaxial thin film material and preparation method and application thereof | |
| Liang et al. | Direct ZnO X-Ray detector with tunable sensitivity | |
| CN110335914A (en) | A kind of MSM type (GaMe)2O3Ternary alloy three-partalloy solar blind UV detector and preparation method thereof | |
| CN114597317A (en) | Based on beta-Ga2O3/Au/MAPbBr3Ultraviolet-visible light detector with sandwich structure and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |