CN108390158A - Stealth material and preparation method thereof - Google Patents
Stealth material and preparation method thereof Download PDFInfo
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- CN108390158A CN108390158A CN201810121677.9A CN201810121677A CN108390158A CN 108390158 A CN108390158 A CN 108390158A CN 201810121677 A CN201810121677 A CN 201810121677A CN 108390158 A CN108390158 A CN 108390158A
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- titanium foil
- titania nanotube
- stealth material
- stealth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
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- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention discloses stealth materials and preparation method thereof.In particular it relates to a kind of method preparing stealth material, including：(1) titanium foil is placed in acid solution, temperature control is incubated；(2) titanium foil and platinized platinum are placed in the acid solution being incubated by the temperature control, and using the titanium foil as anode, the platinized platinum carries out cell reaction as cathode under conditions of DC power supply pressurizes；(3) titanium foil is sintered, to obtain titania nanotube, to obtain the stealth material.The titania nanotube stealth material prepared by this method has an excellent broadband absorbing performance as a result, and it is of low cost, temperature resistant grade is higher, and this method operating procedure is simple, and the absorbing property of prepared stealth material is easy to regulate and control, applied widely.
Description
Technical field
The present invention relates to material engineering fields.In particular it relates to stealth material and preparation method thereof.
Background technology
Stealth material, also known as absorbing material are to refer to absorb and decay incident electromagnetic wave, are by electromagnetic energy
Thermal energy and a kind of electromagnetic material consumed.With the rapid development of modern science and technology, absorbing material is military, two civilian
Aspect plays increasingly important role.For example, the radar reflectivity factor of target can be effectively reduced using absorbing material, profit
Effectively shielding etc. can be carried out to electromagnetic pollution with absorbing material.Therefore, high performance absorbing material is developed as sending a telegram here in recent years
One of the research emphasis of magnetic Material Field.In recent years, nano material quantum size effect and tunnel caused by its special construction
Channel effect, causes it to generate many properties for being different from conventional material, has in preparing wave-absorbing and camouflage material extensive
Application prospect.
Thus, current stealth material and preparation method thereof still has much room for improvement.
Invention content
The present invention be based on inventor couple on the fact that and problem discovery and understanding make：
Inventor has found, current stealth material generally existing absorbing property is poor and inhales that wave frequency range is relatively narrow asks
Topic, thus, it is found that solving the above problems with preparing new wave-sucking performance height and inhaling the wide absorbing material of wave frequency range
One important method.
The present invention is directed to solve at least some of the technical problems in related technologies.
In one aspect of the invention, the present invention proposes a kind of method preparing stealth material.Reality according to the present invention
Example is applied, this method includes：(1) titanium foil is placed in acid solution, temperature control is incubated；(2) by the titanium foil and platinized platinum be placed in through
It crosses in the acid solution that the temperature control is incubated, and using the titanium foil as anode, the platinized platinum is as cathode, in direct current
Cell reaction is carried out under conditions of power supply pressurization；(3) titanium foil is sintered, to obtain nano titania
Pipe, to obtain the stealth material.The titania nanotube stealth material prepared by this method has excellent width as a result,
Frequency absorbing property, and it is of low cost, temperature resistant grade is higher, and this method operating procedure is simple, prepared stealth material
Absorbing property be easy to regulate and control, it is applied widely.
According to an embodiment of the invention, in step (1), the acid solution includes hydrofluoric acid and phosphoric acid and sulfuric acid
At least one of.The acid solution can preferably promote titanium foil to form titanium ion as a result, further improve prepared production
The performance of product.
According to an embodiment of the invention, in the acid solution, the molar ratio of the hydrofluoric acid and the sulfuric acid is 1：(5-
8).The hydrofluoric acid with the proportioning and sulphuric acid electrolyte solution can preferably promote titanium foil to form titanium ion as a result, further carry
The high performance of prepared product.
According to an embodiment of the invention, the temperature that the temperature control is incubated is 15-35 degrees Celsius.As a result, in the temperature range
It is interior that titanium foil is incubated, the titanium ion activity to be formed can be made moderate, contribute to titanium ion electrolysis assembling formation length longer
And the preferable titania nanotube of pattern, and then improve the Stealth Fighter of prepared titania nanotube.
According to an embodiment of the invention, the voltage of the DC power supply pressurization is 12-20V, the DC power supply pressurization
Pressing time is 1.5-4 hours.As a result, in the voltage range and under the pressing time, titanium ion is contributed to assemble to form length
The preferable titania nanotube of longer and pattern is spent, and then improves the stealth of prepared titania nanotube
Energy.
According to an embodiment of the invention, the sintering processes further comprise：The titanium foil is heated up by temperature programming
To 550 degrees Celsius, the titanium foil program is then cooled to room temperature.Be conducive to the dioxy for the amorphous state that assembling is formed as a result,
Change the titania nanotube that titanium nanotube is changed into rutile phase, titania nanotube structure is made more to stablize and cause
It is close, further improve the Stealth Fighter of prepared stealth material.
According to a particular embodiment of the invention, this method includes：(I) titanium foil of 0.2mm thickness is placed in the hydrogen of 0.15mol/L
In the mixed solution of fluoric acid and 1.0mol/L sulfuric acid, using water-bath temperature control, temperature is 25 degrees Celsius；(II) DC power supply is utilized
It pressurizes, the titanium foil is as anode, and for the platinized platinum with area as cathode, positive and negative pole tension is 15V, and pressing time is 2 small
When；(III) after pressurizeing, the titanium foil is cleaned with a large amount of distilled water, then naturally dry carries out in Muffle furnace
Sintering processes rise to 550 DEG C with the heating rate of 1.5 DEG C/min from room temperature, then 2 hours are kept the temperature, then with 2.0 DEG C/min's
Rate is down to room temperature.The titania nanotube stealth material prepared by this method has excellent broadband absorbing performance as a result,
And it is of low cost, temperature resistant grade is higher, and this method operating procedure is simple, and the absorbing property of prepared stealth material is easy
It is applied widely in regulation and control.
In another aspect of this invention, the present invention proposes a kind of stealth material prepared by foregoing method, by
This, the stealth material have the advantages that possessed by the stealth material prepared by foregoing method whole features and, herein
It repeats no more.
In still another aspect of the invention, the present invention proposes a kind of stealth material.According to an embodiment of the invention, this is stealthy
Material includes：The pipe range of titania nanotube, the titania nanotube is not less than 100nm.Incidence wave can be at this as a result,
Pass through higher order reflection inside titania nanotube and fully absorb, which has excellent width
Frequency absorbing property, and simple, of low cost, material the temperature resistant grade of preparation process is higher and its Stealth Fighter is easy to regulate and control.
According to an embodiment of the invention, the crystal structure of the titania nanotube is rutile-type.Having as a result, should
The titania nanotube of crystalline phase state has the structure more stablized with densification, and has preferable wideband Stealth Fighter.
According to an embodiment of the invention, the absorbent wave-length coverage of the stealth material is 0-2500nm.This is stealthy as a result,
The suction wave frequency range of material is wider, and Stealth Fighter is excellent, and applied widely.
Description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention will become in the description from combination following accompanying drawings to embodiment
Obviously and it is readily appreciated that, wherein：
Fig. 1 shows the method flow diagram according to an embodiment of the invention for preparing stealth material；
Fig. 2 shows the scanning electron microscope (SEM) photograph of titania nanotube stealth material according to the ... of the embodiment of the present invention；
Fig. 3 shows the suction wave schematic diagram of titania nanotube stealth material according to the ... of the embodiment of the present invention；And
Fig. 4 shows the wave-absorbing effect figure of titania nanotube stealth material according to the ... of the embodiment of the present invention.
Specific implementation mode
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, and is only used for explaining the present invention, and is not considered as limiting the invention.
In one aspect of the invention, the present invention proposes a kind of method preparing stealth material.Inventor passes through deeply
Research and many experiments find that titania nanotube has excellent absorbing property.Main group of titania nanotube
As titanium dioxide, N-type semiconductor characteristic is presented in titanium dioxide, and with reference to figure 2, hollow structure, pipe is presented in titania nanotube
Diameter is about between ten a few to tens of nanometers.Inventor has found that hollow structure, nanoscale and characteristic of semiconductor determine dioxy
Changing titanium nanotube has preferable wave-sucking performance.Especially compared with traditional titanium dioxide absorbing material, in nanotube-shaped
Titanium dioxide can carry out incidence wave in its pipe higher order reflection and fully absorb, therefore titania nanotube can have
Broader suction wave range locates more excellent absorbing property to show.Specifically, with reference to figure 3, when titania nanotube by
When being irradiated to illumination or radar wave, light can pass through higher order reflection (shown in such as Fig. 3 (a) inside titania nanotube
Go out), the electrons in valence band are transitted to conduction band (such as Fig. 3 (b) is shown) up by the excitation of incident ray, so as to
To absorb or weaken the effect of incident light or radar wave, Stealth Fighter is realized.It according to an embodiment of the invention, should with reference to figure 1
Method includes the following steps：
S100：Titanium foil is placed in acid solution, temperature control is incubated
In this step, titanium foil is placed in acid solution, temperature control is incubated.According to an embodiment of the invention, used
The size and thickness of titanium foil are not particularly limited, such as the titanium foil that size is 100mm × 100mm may be used, and thickness may be used
Degree is the titanium foil of 0.1mm-0.2mm.According to an embodiment of the invention, acid solution can be hydrofluoric acid and sulphur used by being incubated
The mixed solution of acid, or the mixed solution of hydrofluoric acid and phosphoric acid, titanium foil can form titanium ion under the action of fluorine ion,
It is assembled into titania nanotube convenient for electrolysis in subsequent process.The molar ratio of the mixed solution of hydrofluoric acid and sulfuric acid is not by spy
It does not limit, such as the molar ratio of hydrofluoric acid and sulfuric acid can be 1：(5-8), specifically, can be 1:5, can be 1:6, it can
Think 1:6.5, can be 1:7, specifically, the concentration of hydrofluoric acid can be 0.15mol/L, the concentration of sulfuric acid can be
1.0mol/L.The electrolytic solution of hydrofluoric acid and sulfuric acid with the ratio range can preferably promote titanium foil to form titanium ion,
Be conducive to that follow-up titanium ion assembling formation length is longer and the preferable titania nanotube of pattern.Implementation according to the present invention
Example, the temperature that temperature control is incubated can be 15-35 degrees Celsius.Specifically, can be 25 degrees Celsius.As a result, within this temperature range
Titanium foil is incubated, the titanium ion activity to be formed can be made moderate, contributes to titanium ion electrolysis assembling to form pipe range longer simultaneously
And the preferable titania nanotube of pattern, and then the Stealth Fighter of prepared titania nanotube can be improved.Work as control
When the temperature that temperature is incubated is less than 15 degrees Celsius, the activity that titanium foil is formed by titanium ion is not high, therefore is electrolysed in follow-up titanium ion
During assembling forms titania nanotube, the speed of titanium ion migration is slower, is unfavorable for the group of titania nanotube
Dress and growth；When the temperature that temperature control is incubated is more than 35 degrees Celsius, the migration velocity of titanium ion is too fast, is also unfavorable for titanium ion group
Dress forms that pipe range is longer and the preferable titania nanotube of pattern.
S200：Carry out electrolysis processing
In this step, titanium foil and platinized platinum are placed in mixing for the hydrofluoric acid and sulfuric acid being incubated by foregoing temperature control
It closing in solution, and using titanium foil as anode, platinized platinum carries out cell reaction as cathode under conditions of DC power supply pressurizes,
The titanium ion generated in step noted earlier can assemble to form titania nanotube in electrolytic process.According to the present invention
Embodiment, DC power supply pressurization voltage can be 12-20V, DC power supply pressurization pressing time can be 1.5-4 it is small
When.As a result, in the voltage range and under the pressing time, contributing to titanium ion to assemble, formation length is longer and pattern is preferable
Titania nanotube, and then the Stealth Fighter of prepared titania nanotube can be improved.When pressurization voltage is less than
When 12V, titanium ion be easier to be formed it is powdered, it is difficult to assemble to form titania nanotube；When the voltage that pressurizes is more than 20V, titanium
Ion transfer is too fast, is unfavorable for the assembling and growth of titanium ion, is formed by that titania nanotube length is smaller, and pattern is not
It is good, influence its Stealth Fighter.
S300：It is sintered, to obtain titania nanotube, to obtain stealth material
In this step, the titania nanotube formed to step noted earlier is sintered, and can be passed through
Titania nanotube is warming up to 550 degrees Celsius by temperature programming, and then program is cooled to room temperature.Specifically, temperature programming
Heating rate can be 1-10 DEG C/min, and rate of temperature fall may be 1-10 DEG C/min.Specifically, 1.5 DEG C/min may be used
Heating rate drop preceding step prepared by titania nanotube rise to 550 degrees Celsius from room temperature, then keep the temperature 2 hours,
Room temperature is then dropped to the rate of temperature fall of 2 DEG C/min.When heating rate and rate of temperature fall are less than 1 DEG C/min, heating and cooling
Take long, when heating rate and rate of temperature fall are more than 10 DEG C/min, be formed by the pattern of titania nanotube not
It is good.The heat-treatment process is conducive to assemble the titania nanotube transformation of the amorphous state of formation in abovementioned steps as a result,
For the titania nanotube of rutile phase, keeps the structure of titania nanotube more stable and fine and close, further increase
The Stealth Fighter of prepared stealth material.
According to a particular embodiment of the invention, above-mentioned stealth material can with through the following steps that obtain：
(I) titanium foil of 0.2mm thickness is placed in the hydrofluoric acid of 0.15mol/L and the mixed solution of 1.0mol/L sulfuric acid, is adopted
With water-bath temperature control, temperature is 25 degrees Celsius；
(II) it is pressurizeed using DC power supply, titanium foil is as anode, and the platinized platinum with area is as cathode, positive and negative pole tension
For 15V, pressing time is 2 hours；
(III) after pressurizeing, titanium foil is cleaned with a large amount of distilled water, then naturally dry carries out in Muffle furnace
Heat treatment, 550 DEG C are risen to the heating rate of 1.5 DEG C/min from room temperature, then 2 hours are kept the temperature, then with 2.0 DEG C/min's
Rate is down to room temperature.
The titania nanotube stealth material prepared by this method has excellent broadband absorbing performance as a result, and
It is of low cost, temperature resistant grade is higher, and this method operating procedure is simple, and the absorbing property of prepared stealth material is easy to adjust
Control, it is applied widely.
In summary, prepared titania nanotube stealth material according to the method for the embodiment of the present invention, passes through knot
The higher order reflection characteristic to incidence wave inside the semiconductor absorbing property and nanotube of titanium dioxide itself is closed, is obtained good
Wideband Stealth Fighter.On the one hand, titanium dioxide itself is a kind of semi-conducting material, after incidence wave is incident thereon, valence band
On electrons be excited to conduction band up, and then incidence wave energy can be absorbed；On the other hand, incidence wave is incident on nanotube
Inside can be diffusely reflected, to further improve the absorbing property of titania nanotube.Inventor is by further investigation
And lot of experiment validation is found, the pipe range of titania nanotube has great influence to its Stealth Fighter.Specifically, when entering
When ejected wave is incident in the pipe of titania nanotube, if the pipe range of titania nanotube is longer, for example, pipe range is not less than
100nm, then incident wave energy pass through higher order reflection inside nanotube, can inside titania nanotube by abundant reflection and
It absorbs, and then preferable absorbing property can be obtained.According to the method for the embodiment of the present invention, by controlling titania nanotube
Pressurization size, medium type, oxidization time, sintering schedule in stealth material preparation process and matrix component and structure etc.
Factor can easily control the caliber of titania nanotube, the size of length and barrier layer thickness, such as can obtain pipe
A length of 100-300nm, caliber 10-50nm, barrier layer thickness are the titania nanotube of 50-150nm.The titanium dioxide is received
Mitron has excellent wideband Stealth Fighter, and the preparation process is very simple, and cost is also very low, is easy to carry out industrial metaplasia
Production.
In another aspect of this invention, the present invention proposes a kind of stealth material prepared by foregoing method, by
This, the stealth material have the advantages that possessed by the stealth material prepared by foregoing method whole features and, herein
It repeats no more.
In still another aspect of the invention, the present invention proposes a kind of stealth material.According to an embodiment of the invention, this is stealthy
Material includes：The pipe range of titania nanotube, the titania nanotube can be not less than 100nm.Reality according to the present invention
Example is applied, the pipe range of the titania nanotube can be 100-300nm, and caliber can be 10-50nm, and barrier layer thickness can be
50-150nm.According to an embodiment of the invention, when the titania nanotube is irradiated by illumination or radar wave, light meeting
Pass through higher order reflection inside titania nanotube, the electrons in valence band are transitted to and led by the excitation of incident ray
Band gets on, and so as to absorb or weaken the effect of incident light or radar wave, realizes Stealth Fighter.Also, according to the present invention
The pipe range of the titania nanotube stealth material of embodiment is longer, and incidence wave can be inside titania nanotube into excessive
The reflection of grade and adequately absorption, and then the titania nanotube stealth material has excellent broadband absorbing performance, and
Simple, of low cost, material the temperature resistant grade of preparation process is higher and its Stealth Fighter is easy to regulate and control.
According to an embodiment of the invention, the crystal structure of titania nanotube can be rutile-type.Having as a result, should
The titania nanotube of crystalline phase state has the structure more stablized with densification, and has preferable wideband Stealth Fighter.
According to an embodiment of the invention, which is 0-
2500nm.The suction wave frequency range of the stealth material is wider as a result, and Stealth Fighter is excellent, and applied widely.
The solution of the present invention is explained below in conjunction with embodiment.It will be understood to those of skill in the art that following
Embodiment is merely to illustrate the present invention, and should not be taken as limiting the scope of the invention.Particular technique or item are not specified in embodiment
Part, it is carried out according to technology or condition described in document in the art or according to product description.Agents useful for same or instrument
Production firm person is not specified in device, is that can purchase the conventional products obtained by market.
Embodiment 1
The titanium foil that size is 100 × 100 × 0.1mm is placed in 0.15MHF+1.0MH first2SO4In solution, using water-bath
Pot temperature control, temperature are controlled at 25 DEG C or so.It is pressurizeed using DC power supply, wherein titanium foil is made as anode with area platinized platinum
For cathode, in 20V, pressing time is 3 hours for positive and negative pole tension control.After time, titanium foil is carried out with a large amount of distilled water
Cleaning, then heated in Muffle furnace after natural drying, heating cycle is as follows：With the heating rate of 1.5 DEG C/min from
Room temperature rises to 550 DEG C, then keeps the temperature 2 hours, then cools to room temperature with the rate of 2.0 DEG C/min.
The pipe range of titania nanotube is made in 150nm or so according to the present embodiment, barrier layer thickness is in 50nm or so.
The nanotube has reached 60% or more to the reflectivity of the wave in 0-2500nm wave bands, has good wideband Stealth Fighter.
Embodiment 2：
The titanium foil that size is 100 × 100 × 0.1mm is placed in 0.2MHF+1.0MH first2SO4In solution, using water-bath
Temperature control, temperature are controlled at 25 DEG C or so.It is pressurizeed using DC power supply, wherein titanium foil is as anode, with area platinized platinum conduct
Cathode, in 18V, pressing time is 2 hours for positive and negative pole tension control.After time, titanium foil is carried out clearly with a large amount of distilled water
It washes, then heated in Muffle furnace after natural drying, heating cycle is as follows：With the heating rate of 1.5 DEG C/min from room
Temperature rises to 550 DEG C, then keeps the temperature 2 hours, then cools to room temperature with the rate of 2.0 DEG C/min.
The pipe range that titania nanotube is made according to the present embodiment stops thickness in 100nm or so, bore about 50nm
Degree is in 60nm or so.The nanotube has reached 70% or more to the reflectivity of the wave in 0-2500nm wave bands, has good width
Frequency Stealth Fighter.
Embodiment 3：
The titanium foil that size is 100 × 100 × 0.1mm is placed in 0.2MHF+1.0MH first3PO4In solution, using water-bath
Temperature control, temperature are controlled at 25 DEG C or so.It is pressurizeed using DC power supply, wherein titanium foil is as anode, with area platinized platinum conduct
Cathode, in 15V, pressing time is 2 hours for positive and negative pole tension control.After time, titanium foil is carried out clearly with a large amount of distilled water
It washes, then heated in Muffle furnace after natural drying, heating cycle is as follows：With the heating rate of 1.5 DEG C/min from room
Temperature rises to 550 DEG C, then keeps the temperature 2 hours, then cools to room temperature with the rate of 2.0 DEG C/min.
The pipe range that titania nanotube is made according to the present embodiment stops thickness in 300nm or so, bore about 40nm
Degree is in 150nm or so.The nanotube has reached 80% or more to the reflectivity of the wave in 0-2500nm wave bands, has good width
Frequency Stealth Fighter.
Existing stealth material is less than 30%, therefore its Stealth Fighter to the reflectivity of the wave in 0-2500nm wave bands
It is poor, and it is relatively narrow to inhale wave frequency range.With reference to figure 4, titania nanotube stealth material according to an embodiment of the invention,
To the reflectivity of the wave in 0-2500nm wave bands 70% or more.Therefore, titania nanotube according to the ... of the embodiment of the present invention
Stealth material improves at least 65% or more, especially from the ultraviolet Stealth Fighter to the existing invisible coating of far infrared band internal ratio
In the ultraviolet band of 240~329nm, Stealth Fighter improves 90% or more.In other words, dioxy according to the ... of the embodiment of the present invention
Change titanium nanotube stealth material, excellent suction wave is all had to (i.e. wavelength is 0-2500nm wave bands) in far infrared band ultraviolet
Ability.Also, titania nanotube stealth material according to the ... of the embodiment of the present invention, preparation method is simple, of low cost, material
The temperature resistant grade of material is higher and its Stealth Fighter is easy to regulate and control, and applicability is wide.
In the description of the present invention, the orientation or positional relationship of the instructions such as term "upper", "lower" is based on ... shown in the drawings
Orientation or positional relationship is merely for convenience of the description present invention rather than requires the present invention must be with specific azimuth configuration and behaviour
Make, therefore is not considered as limiting the invention.
In the description of this specification, the description of reference term " one embodiment ", " another embodiment " etc. means to tie
The embodiment particular features, structures, materials, or characteristics described are closed to be included at least one embodiment of the present invention.At this
In specification, a schematic expression of the above terms does not necessarily refer to the same embodiment or example.Moreover, the tool of description
Body characteristics, structure, material or feature may be combined in any suitable manner in any one or more of the embodiments or examples.This
Outside, without conflicting with each other, those skilled in the art by different embodiments described in this specification or can show
The feature of example and different embodiments or examples is combined.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, changes, replacing and modification.
Claims (10)
1. a kind of method preparing stealth material, which is characterized in that including：
(1) titanium foil is placed in acid solution, temperature control is incubated；
(2) titanium foil and platinized platinum are placed in the acid solution being incubated by the temperature control, and use the titanium foil
As anode, the platinized platinum carries out cell reaction as cathode under conditions of DC power supply pressurizes；
(3) titanium foil is sintered, to obtain titania nanotube, to obtain the stealth material.
2. according to the method described in claim 1, it is characterized in that, in step (1), the acid solution includes hydrofluoric acid,
And at least one of phosphoric acid and sulfuric acid；
Optionally, in the acid solution, the molar ratio of the hydrofluoric acid and the sulfuric acid is 1：(5-8).
3. according to the method described in claim 1, it is characterized in that, the temperature that the temperature control is incubated is 15-35 degrees Celsius.
4. according to the method described in claim 1, it is characterized in that, the DC power supply pressurization voltage be 12-20V, it is described
The pressing time of DC power supply pressurization is 1.5-4 hours.
5. according to the method described in claim 1, it is characterized in that, the sintering processes further comprise：Pass through temperature programming
The titanium foil is warming up to 550 degrees Celsius, the titanium foil program is then cooled to room temperature.
6. according to the method described in claim 1, it is characterised in that it includes：
(I) titanium foil of 0.2mm thickness is placed in the hydrofluoric acid of 0.15mol/L and the mixed solution of 1.0mol/L sulfuric acid, using water
Bath temperature control, temperature are 25 degrees Celsius；
(II) it is pressurizeed using DC power supply, the titanium foil is as anode, and the platinized platinum with area is as cathode, positive and negative pole tension
For 15V, pressing time is 2 hours；
(III) after pressurizeing, the titanium foil is cleaned with a large amount of distilled water, then naturally dry carries out in Muffle furnace
Heat treatment, 550 DEG C are risen to the heating rate of 1.5 DEG C/min from room temperature, then 2 hours are kept the temperature, then with 2.0 DEG C/min's
Rate is down to room temperature.
7. stealth material prepared by a kind of method by described in claim 1-6.
8. a kind of stealth material, which is characterized in that including：Titania nanotube, the pipe range of the titania nanotube is not
Less than 100nm.
9. stealth material according to claim 8, which is characterized in that the crystal structure of the titania nanotube is gold
Red stone-type.
10. stealth material according to claim 8, which is characterized in that the absorbent wave-length coverage of stealth material is
0-2500nm。
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| CN201810121677.9A CN108390158A (en) | 2018-02-07 | 2018-02-07 | Stealth material and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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