CN108389931A - Collect the biological neural chip and preparation method thereof of optoelectronic pole and microelectrode one - Google Patents
Collect the biological neural chip and preparation method thereof of optoelectronic pole and microelectrode one Download PDFInfo
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- CN108389931A CN108389931A CN201810332745.6A CN201810332745A CN108389931A CN 108389931 A CN108389931 A CN 108389931A CN 201810332745 A CN201810332745 A CN 201810332745A CN 108389931 A CN108389931 A CN 108389931A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
Abstract
The present invention relates to the technical fields of semiconductor devices, more particularly, to the biological neural chip and preparation method thereof of collection optoelectronic pole and microelectrode one.The concrete structure of the chip includes optoelectronic pole part and microelectrode part, optoelectronic pole part sends out the light of 470nm using light emitting diode, nerve cell is stimulated to generate neuroelectricity signal, nerve signal potential change is received by the microelectrode part near optoelectronic pole again, to detect influence of the external signal to nerve cell, and then study biobehavioral.Optoelectronic pole part includes gallium nitride based light emitting diode, metal electrode, transparency conducting layer, temperature sensor, metallic circuit and PAD electrodes；Microelectrode part includes transparent membrane electrode or metal electrode, metallic circuit and PAD electrodes.The present invention is integrated by optoelectronic pole and microelectrode, has the characteristics that size is small, measuring accuracy is high, high conversion efficiency, is easily implanted into organism, realizes the measurement for nerve cell carry out neuropotential while light stimulus.
Description
Technical field
The present invention relates to the technical fields of semiconductor devices, more particularly, to the life of collection optoelectronic pole and microelectrode one
Object neuro chip and preparation method thereof.
Background technology
Since 20th century, the mankind develop rapidly the research of biological cell, and the research in terms of electrophysiology is greatly
People are promoted to individual functional activities of single nerve cell, the physiology physical characteristic of neuron membrane and related individual god
The research of position and effect through member in neuronal circuit.People and set about leading to for the understanding constantly improve of nervous system
The electrical activity of nerve is crossed to treat neurological disease.Traditional electrophysiology experiment, is required for through electrical stimulation member
Experiment.The temperature that the shortcomings that electro photoluminescence is that its intensity is excessive, easily causes local neural tissue is excessively high, and nervous system is caused to damage
Evil；In addition, electro photoluminescence general action range is larger, accuracy is difficult to control, and therefore, people attempt to find other alternatively
Technology.
Light genetic technique is the biotechnology of the multi-crossed disciplines rapidly developed, it utilizes light stimulus light sensation base
Cause realizes the write-in of external information, realizes that the electrophysiology information under specific behavior is read by photoelectrode array technology, and then solve
It analyses the functional character of a certain neurological region and is contacted with biological performance behavior.The light stimulus that light genetic technique uses, can have
Specific individual neurons are acted on to effect, light pulse speed is similar with electric pulse up to sub- Millisecond.
Light genetic technique is mainly by stimulating photaesthesia channel protein（ChR2）And halorhodopsin（NpHR）Both
Photosensitive protein realizes control.Wherein, photaesthesia channel protein（ChR2）It is most sensitive to the light stimulus of 470nm, Neng Gouyin
Play nervous excitation；Halorhodopsin（NpHR）It is most sensitive to the light stimulus of 580nm, nervous excitation can be inhibited.The present invention adopts
The mainly control of light sensitive channel protein, i.e., we are using the blue-light device near 470nm.
Currently, the semiconductor neuro chip researched and developed under light genetic technique background can only realize writing function, polished bard mostly
Swash most of fiber optic conduction by near record position to provide.The light stimulus transformation efficiency of this method conduction is low, and acts on position
Set accuracy deficiency.
Invention content
The present invention is at least one defect overcome described in the above-mentioned prior art, provide collection optoelectronic pole and microelectrode one
Biological neural chip and preparation method thereof combines required luminous signal in light genetic technique with electric signal is received.
The technical scheme is that：Collect the biological neural chip of optoelectronic pole and microelectrode one, wherein including optoelectronic pole
Part and microelectrode part, optoelectronic pole part send out the light of 470nm using light emitting diode, and stimulation nerve cell generates nerve
Current signal, then nerve signal potential change is received by the microelectrode part near optoelectronic pole, to detect external signal to god
Influence through cell, and then study biobehavioral.The optoelectronic pole part includes gallium nitride based light emitting diode, metal electricity
Pole, transparency conducting layer, temperature sensor, metallic circuit and PAD electrodes；Microelectrode part includes transparent membrane electrode or metal electricity
Pole, metallic circuit and PAD electrodes.
Further, extension lamination used in the optoelectronic pole, material can be gallium nitride, the materials such as aluminium gallium nitrogen
Material, suitable for sending out the optical signal of 470nm；Transparent membrane conductive layer in its extension lamination can be tin indium oxide, indium gallium zinc
Any translucent conductive materials such as oxide, zinc oxide, yttrium oxide, thin Ni/Au；The poles n used by optoelectronic pole and the poles p metal electricity
Pole can be the alloys such as Ni/Au, Ti/Au, Ti/Al/Ni/Au.
Further, material used by the microelectrode can be transparent according to the relative position of itself and optoelectronic pole
, can also be opaque；Metal material used by transparent microelectrode can be ITO, IGZO, ZnO, IrO, thin Ni/Au
Equal transparent materials；Metal material used by opaque microelectrode can be the alloys such as thick Ni/Au, Ti/Au, Cr/Au.It is given birth to
Long method is electron beam evaporation, metal organic chemical vapor deposition, magnetron sputtering etc.；
Further, the microelectrode and optoelectronic pole part are isolated using transparent dielectric layer, to avoid neuroelectricity to photoelectricity
The interference of electrode current and optoelectronic pole optical signal receive microelectrode the noise that neuroelectricity signal generates；Its dielectric layer can be two
The transparent non-conductive layer such as silica, silicon nitride.
Further, the position of the microelectrode can be same where with optoelectronic pole part luminescence transparent conductive layer
Position, in the different laminations being mutually isolated；Can also be near the luminous position of optoelectronic pole part；The arrangement side of microelectrode
Formula, either linear array type, can also be rectangle net point type.
Further, the material of the temperature sensor can be that resistivity varies with temperature stable any metal.
Such as platinum, copper, suitable for being operated in different temperatures.
In the present invention, this chip volume is small, and thickness is thin, is easily implanted into organism, and smaller to its tissue injury, repeats
It utilizes.Optoelectronic pole is incorporated in same position with microelectrode, can be carried out while light sensitive channel protein carries out light stimulus
Accurately neuropotential records, high resolution.From tradition by the way that unlike fiber optic conduction light stimulus, optoelectronic pole is using micro-
Light emitting diode, the miniaturization in size allow experiment mice freely activity, are able to observe that more biological respinses.For
Optoelectronic pole and microelectrode are realized in the integrated of chip same position,
The preparation method for collecting optoelectronic pole and the biological neural chip of microelectrode one, includes the following steps：
S1. plasma etching method is utilized in the extension lamination for having grown gallium nitride light-emitting layer, etches p-type platform；
S2. then whole face deposits transparent conductive film, and wet etching only leaves the ITO conductive layer on p-type platform, carries p-type
Window；
S3. PECVD deposition mask dielectric layers are utilized, then etch p-type and N-shaped window on dielectric layer；
S4. p-type electrode, N-shaped are respectively obtained by the method for photoetching, whole face evaporation metal, stripping or corrosion on dielectric layer
Electrode, microelectrode, metallic circuit and PAD electrode sections and temperature sensor；
S5. PECVD deposition mask dielectric layers are utilized again, and PAD windows and microelectrode window are etched on dielectric layer.
Preferably, preferred gallium nitride base sapphire substrate in the present invention；N, the poles p metal distinguish preferred Ti/Al/Ni/Au and
Ni/Au；The preferred ITO of transparency conducting layer；The preferred ITO of microelectrode materials；Circuit and the parts PAD preferably Ni/Au and Ti/Au；Temperature
The preferred Pt metals of sensor；The preferred silica of dielectric layer material（SiO2）.The preferably long * wide=1.0cm* of size of entire device
0.30mm；The preferred rectangle of p-type electrode, n-type electrode, the preferred rectangle of transparency conducting layer, microelectrode circular.Positive technique is complete
At, can appropriate organic semiconductor device, reduce implantation biological neural tissue when injury.
Compared with prior art, advantageous effect is：Optoelectronic pole and microelectrode are integrated in same position by the present invention, are not only had
There is the effect that analog neuron stimulates, moreover it is possible to while recording the neuropotential variation generated when stimulation.Optoelectronic pole and microelectrode
Height is close, also can preferably improve the accuracy of stimulus signal.In addition, the chip has small size, high conversion efficiency, Yi Zhi
The features such as entering in organism will have bright prospects in the research of the following light genetic aspect.
Description of the drawings
Fig. 1 is 1 front three-dimensional structure diagram of embodiment.
Fig. 2 is 1 overlooking structure figure of embodiment.
Fig. 3 is the local device schematic diagram of detecting location part in implantation organism in embodiment 1.
Fig. 4 is the first schematic diagram of local device of detecting location part in implantation organism in embodiment 2.
Fig. 5 is the second schematic diagram of local device of detecting location part in implantation organism in embodiment 2.
Fig. 6 is the sectional view that 1 device of embodiment integrates tip in optoelectronic pole and microelectrode.
Fig. 7 is 1 encapsulated layer of embodiment windowing position view（Dotted portion is opening in figure）.
Fig. 8 is the vertical view of 3 front optoelectronic pole of embodiment.
Fig. 9 is sectional view of the embodiment 3 along optoelectronic pole-microelectrode vertical direction.
Specific implementation mode
The attached figures are only used for illustrative purposes and cannot be understood as limitating the patent；It is attached in order to more preferably illustrate the present embodiment
Scheme certain components to have omission, zoom in or out, does not represent the size of actual product；To those skilled in the art,
The omitting of some known structures and their instructions in the attached drawings are understandable.Being given for example only property of position relationship described in attached drawing
Illustrate, should not be understood as the limitation to this patent.
Embodiment one
As shown in attached drawing 1,2,3,6,7, which is integrated in microelectrode and optoelectronic pole the same position at the tip of probe chip
It sets.Wherein optoelectronic pole part is to have grown buffer layer, n-GaN layers, mqw light emitting layer, p-GaN successively on a sapphire substrate
Layer.After former piece is cleaned, photoetching development is carried out, p-type platform is formed using plasma etching certain depth.Then whole face carries out
ITO conductive films deposit, and the partial etching in addition to p-type platform is removed, and expose p-type window on p-type platform.Then deposition is covered
Film layer simultaneously corrodes the poles exposing n, p window, successively evaporating n, p-electrode, metallic circuit and PAD electrode metals.This is arrived, optoelectronic pole makes
It completes.Continue to be made as electrode section on the basis of the above, first to make microelectrode part not done by the electric current of optoelectronic pole circuit
Disturb, need first by device metallization medium layer play the role of protective separation, then the metallic circuit of microelectrode will be connected saturating
One end windowing on bright conductive layer.Then whole face deposits transparent conductive film, corrodes and tip circle.So far, microelectrode portion
Divide and completes.Finally, entire device is packaged, only exposes microelectrode, PAD electrode window through ray, the moon as shown in Figure 7
Shadow part.
Embodiment two
As shown in attached drawing 4,5, this device architecture is similar with embodiment one, only changes the arrangement mode of microelectrode, and uses
Metal material is opaque as microelectrode, i.e. microelectrode itself.Since optoelectronic pole luminous power of the present invention is enough
Greatly, the nerve from the light stimulus sent out by optoelectronic pole can be received if even if microelectrode itself is not on optoelectronic pole part
The neuropotential signal of first cell.Since metal material identical with metallic circuit can be used in microelectrode, processing step can be saved.
Meanwhile microelectrode being arranged in except light-emitting zone, it can avoid the switch potential change generated by light direct irradiation.
Embodiment three
As shown in Figures 8 and 9, this device adds Pt temperature sensors, monitors the heat condition of optoelectronic pole, and by microelectrode portion
Be placed in substrate back.The device uses sapphire transparent substrate, the light-transmissive substrate illumination microelectrode institute that optoelectronic pole is sent out
On the neuronal cell for locating position, microelectrode receives neuropotential variation.While the shape of optoelectronic pole n, p-electrode can be as attached
Ring electrode and rectangular electrode shown in fig. 6.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention.For those of ordinary skill in the art, may be used also on the basis of the above description
To make other variations or changes in different ways.There is no necessity and possibility to exhaust all the enbodiments.It is all this
All any modification, equivalent and improvement etc., should be included in the claims in the present invention made by within the spirit and principle of invention
Protection domain within.
Claims (7)
1. collecting the biological neural chip of optoelectronic pole and microelectrode one, which is characterized in that including optoelectronic pole part and microelectrode
Part, the optoelectronic pole part include gallium nitride based light emitting diode, metal electrode, transparency conducting layer, temperature sensor, gold
Belong to circuit and PAD electrodes；Microelectrode part includes transparent membrane electrode or metal electrode, metallic circuit and PAD electrodes.
2. the biological neural chip of collection optoelectronic pole and microelectrode one according to claim 1, it is characterised in that：Described
Extension lamination used in optoelectronic pole, material can be gallium nitride, the materials such as aluminium gallium nitrogen, suitable for sending out the light of 470nm
Signal；Transparent membrane conductive layer in its extension lamination, can be tin indium oxide, indium gallium zinc oxide, zinc oxide, yttrium oxide,
Any translucent conductive material such as thin Ni/Au；The poles n used by optoelectronic pole and the poles p metal electrode, can be Ni/Au, Ti/Au,
The alloys such as Ti/Al/Ni/Au.
3. the biological neural chip of collection optoelectronic pole and microelectrode one according to claim 1, it is characterised in that：Described
Material used by microelectrode can be transparent according to the relative position of itself and optoelectronic pole, can also be opaque；Thoroughly
Metal material used by bright microelectrode can be the transparent materials such as ITO, IGZO, ZnO, IrO, thin Ni/Au；Opaque micro- electricity
Extremely used metal material can be the alloys such as thick Ni/Au, Ti/Au, Cr/Au.
4. the biological neural chip of collection optoelectronic pole and microelectrode one according to claim 1, it is characterised in that：Described
Microelectrode and optoelectronic pole part are isolated using transparent dielectric layer, and dielectric layer, which can be that silica, silicon nitride etc. are transparent, does not lead
Electric layer.
5. the biological neural chip of collection optoelectronic pole and microelectrode one according to claim 1, it is characterised in that：Described
The position of microelectrode can be the same position where with optoelectronic pole part luminescence transparent conductive layer, in the difference being mutually isolated
Lamination；Can also be near the luminous position of optoelectronic pole part；The arrangement mode of microelectrode, either linear array type, also may be used
To be rectangle net point type.
6. the biological neural chip of collection optoelectronic pole and microelectrode one according to claim 1, it is characterised in that：Described
The material of temperature sensor can be that resistivity varies with temperature stable any metal.
7. the preparation method of collection optoelectronic pole according to claim 1 and the biological neural chip of microelectrode one, feature
It is, includes the following steps：
S1. plasma etching method is utilized in the extension lamination for having grown gallium nitride light-emitting layer, etches p-type platform；
S2. then whole face deposits transparent conductive film, and wet etching only leaves the ITO conductive layer on p-type platform, carries p-type
Window；
S3. PECVD deposition mask dielectric layers are utilized, then etch p-type and N-shaped window on dielectric layer；
S4. p-type electrode, N-shaped are respectively obtained by the method for photoetching, whole face evaporation metal, stripping or corrosion on dielectric layer
Electrode, microelectrode, metallic circuit and PAD electrode sections and temperature sensor；
S5. PECVD deposition mask dielectric layers are utilized again, and PAD windows and microelectrode window are etched on dielectric layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810332745.6A CN108389931A (en) | 2018-04-13 | 2018-04-13 | Collect the biological neural chip and preparation method thereof of optoelectronic pole and microelectrode one |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810332745.6A CN108389931A (en) | 2018-04-13 | 2018-04-13 | Collect the biological neural chip and preparation method thereof of optoelectronic pole and microelectrode one |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108389931A true CN108389931A (en) | 2018-08-10 |
Family
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| CN111613700A (en) * | 2020-05-27 | 2020-09-01 | 杭州电子科技大学温州研究院有限公司 | Photoelectrode for optogenetic stimulation and electrophysiological recording and preparation method thereof |
| CN111863776A (en) * | 2020-07-30 | 2020-10-30 | 中山大学 | Low-noise double-sided integrated injectable biological photoelectric electrode microprobe and preparation method thereof |
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| CN111863776B (en) * | 2020-07-30 | 2022-09-20 | 中山大学 | Low-noise double-sided integrated injectable biological photoelectric electrode microprobe and preparation method thereof |
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