CN108389873B - Method for manufacturing resistance switch, device manufactured by method and memory - Google Patents
Method for manufacturing resistance switch, device manufactured by method and memory Download PDFInfo
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- CN108389873B CN108389873B CN201810171334.3A CN201810171334A CN108389873B CN 108389873 B CN108389873 B CN 108389873B CN 201810171334 A CN201810171334 A CN 201810171334A CN 108389873 B CN108389873 B CN 108389873B
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 230000015654 memory Effects 0.000 title abstract description 13
- FJOLTQXXWSRAIX-UHFFFAOYSA-K silver phosphate Chemical compound [Ag+].[Ag+].[Ag+].[O-]P([O-])([O-])=O FJOLTQXXWSRAIX-UHFFFAOYSA-K 0.000 claims abstract description 52
- 229940019931 silver phosphate Drugs 0.000 claims abstract description 52
- 229910000161 silver phosphate Inorganic materials 0.000 claims abstract description 52
- 239000000463 material Substances 0.000 claims abstract description 47
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000000717 retained effect Effects 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims description 2
- 239000010439 graphite Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 230000008859 change Effects 0.000 abstract description 12
- 230000000694 effects Effects 0.000 description 10
- 238000012360 testing method Methods 0.000 description 8
- 239000000654 additive Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000000945 filler Substances 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- -1 silver ions Chemical class 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000010416 ion conductor Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007784 solid electrolyte Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
Abstract
The invention provides a method for manufacturing a resistance switch, a device manufactured by the method and a memory comprising the device. The method comprises the steps of forming a device, wherein the device comprises two electrodes and a resistance change material which is clamped between the two electrodes and is in contact with the two electrodes, and the resistance change material comprises silver phosphate; applying a first pressure and/or a first temperature to the device; and applying an erase voltage between the two electrodes while maintaining the first pressure and/or the first temperature to perform an erase operation, so that the device becomes a resistive switch.
Description
Technical Field
The invention relates to the field of solid electrolyte, a resistance switch and a memory, in particular to a resistance switch based on ion conductor silver phosphate and a preparation method thereof.
Background
The nonvolatile memory, such as a ferroelectric memory (FRAM), a Resistive Random Access Memory (RRAM), a phase change memory (PRAM) and a magnetic memory (MRAM), has great research and development interest, wherein the resistive random access memory is a memory based on a resistance switching effect, and has the advantages of non-volatility, high read-write speed, low power consumption, simple structure, compatibility with a CMOS (complementary metal-oxide-semiconductor transistor) process and the like, and thus is considered to be one of the best solutions for the next-generation memory technology.
Resistive switching memories are typically sandwich structures: therefore, searching and researching a proper material with a resistance switching effect is the key for preparing the novel resistive random access memory. On the other hand, if a resistance switch material which can be used in severe environments such as high temperature, high pressure, strong radiation and the like and can store information can be developed, the resistance switch material has wide practical value for improving the resistance transformation performance of the resistance switch material and developing a high temperature resistant, impact resistant and strong field resistant resistance random access memory. Those skilled in the art have been trying to develop a resistance change material having the above excellent properties.
However, the complexity and production cost of the process are increased, and the conductive performance of the silver phosphate can not be effectively changed by applying specific pressure, temperature or combination of pressure and temperature to the silver phosphate.
Disclosure of Invention
In view of the above, the present invention provides a resistance switch based on an ion conductor silver phosphate and a method for manufacturing the same, which activates the conductive performance of the silver phosphate at a certain first pressure and/or a first temperature, thereby manufacturing a silver phosphate resistance switch device.
A first aspect of the invention provides a method of manufacturing a resistive switch, the method comprising the steps of:
(1) forming a device, wherein the device comprises two electrodes and a resistance change material which is clamped between the two electrodes and is in contact with the two electrodes, and the resistance change material contains silver phosphate;
(2) applying a first pressure and/or a first temperature to the device, the first pressure being higher than normal pressure and the first temperature being higher than normal temperature, wherein
When a first pressure is applied to the device only and the device is at normal temperature, the first pressure is 2.6GPa to 16.6 GPa;
when a first temperature is applied to the device only, and the device is under normal pressure, the first temperature is 100 ℃ to 300 ℃;
under the condition that a first pressure and a first temperature are applied to the device at the same time, the first pressure is 2.6GPa to 16.6GPa, and the first temperature is 100 ℃ to 300 ℃;
(3) applying a first voltage between the two electrodes while maintaining the first pressure and/or first temperature, performing an erase operation, such that the device becomes a resistive switch.
According to one embodiment of the present invention, after step (3), the information stored in the device by performing the erase operation by applying the first voltage in step (3) is retained after changing the first pressure and/or the first temperature, in particular, so that the first pressure and/or the first temperature becomes normal temperature and/or normal pressure.
According to an embodiment of the invention, optionally, a second pressure and/or a second temperature is applied again to the resistive switch, and a second voltage different from the first voltage is applied between the two electrodes while maintaining the second pressure and/or the second temperature, performing a further erase operation when the information stored in the device is different from the information stored in the device by performing an erase operation by applying the first voltage; the second pressure is normal pressure to 16.6GPa, and the second temperature is normal temperature to 300 ℃.
According to one embodiment of the invention, the electrodes are made of a conductive material selected from the group consisting of: a conductive metal selected from gold, platinum, silver, copper, or an alloy of two or more thereof; or a conductive substance selected from graphite, carbon tubes, graphene, conductive oxides.
According to an embodiment of the present invention, the silver phosphate included in the resistive switching material is optionally doped, and for the doped silver phosphate, the doping elements include: copper, lithium, rubidium, titanium, sulfur, selenium, silicon and silver ion holes, and the doping concentration is 0.01 mol percent to 90 mol percent based on the total molar amount of the silver phosphate.
According to one embodiment of the present invention, the resistive switching material further comprises optional fillers and additives, the fillers and additives comprising: and the conductive silver paste, the silver nanoparticles or the graphite powder are used, and the ratio of the filler to the additive is 0.01-50 wt% based on the total weight of the resistance change material.
According to one embodiment of the invention, the resistive material is composed of silver phosphate, and is free of other materials, and the silver phosphate is not doped.
According to one embodiment of the invention, the spacing between the electrodes is between 1 mm and 5 nm.
According to an embodiment of the present invention, in the step (3), a first voltage applied between the two electrodes is 0.5V to 30V, the second voltage is 0.5V to 30V, and the second voltage is different from the first voltage; preferably the second voltage is lower than the first voltage; or preferably the second voltage is higher than the first voltage.
A second aspect of the invention provides a device for fabricating a resistive-switch-based memory, the device comprising two electrodes and a resistive-switching material sandwiched between and in contact with the two electrodes, the resistive-switching material comprising silver phosphate.
According to an embodiment of the present invention, the silver phosphate included in the resistive switching material is optionally doped, and for the doped silver phosphate, the doping elements include: copper, lithium, rubidium, titanium, sulfur, selenium, silicon and silver ion holes, and the doping concentration is 0.01 mol percent to 90 mol percent based on the total molar amount of the silver phosphate.
According to one embodiment of the present invention, the resistive switching material further comprises optional fillers and additives, the fillers and additives comprising: and the conductive silver paste, the silver nanoparticles or the graphite powder are used, and the ratio of the filler to the additive is 0.01-50 wt% based on the total weight of the resistance change material.
According to one embodiment of the invention, the resistive material is formed by silver phosphate, and the silver phosphate is not doped.
According to one embodiment of the invention, the spacing between the electrodes is between 1 mm and 5 nm.
According to one embodiment of the present invention, after applying a first voltage to the two electrodes of the device under a condition of a first pressure and/or a first temperature to perform an erase operation, the device forms a resistive switch, and then changes the first pressure and/or the first temperature, in particular, after the first pressure and/or the first temperature becomes a normal temperature and/or a normal pressure, information stored in the device by performing the erase operation by applying the first voltage is retained.
A third aspect of the present invention provides a resistive random access memory including the device of the present invention described above.
Compared with the prior art, the invention has the beneficial effects that:
as described above, according to the prior art, silver phosphate has poor conductivity at normal temperature and pressure, and a resistance switching effect hardly occurs. However, the inventor of the present invention has found that the structure and properties of the material are uniquely changed if a specific pressure and/or temperature higher than the normal temperature or pressure is applied to the silver phosphate. For the semiconductor silver phosphate, high temperature or high voltage can make it generate more mobile silver ions, which is beneficial for the establishment of conductive filaments and the occurrence of resistive switching effects. Therefore, the invention has the advantages of simple process, high efficiency, low cost and the like, and more importantly, the prepared device can work under the conditions of normal temperature or normal pressure and can also be used under high temperature and/or high pressure.
Drawings
Fig. 1 is a schematic structural diagram of a resistive switching prototype device according to an embodiment of the present invention.
Fig. 2 is an X-ray diffraction pattern of silver phosphate used according to one embodiment of the present invention at different pressures.
Fig. 3 is a graph of unit cell volume versus pressure for silver present in silver phosphate used in accordance with one embodiment of the present invention.
Fig. 4 is an X-ray diffraction pattern of silver phosphate used in accordance with one embodiment of the present invention at various temperatures.
Fig. 5 is a graph of the conductivity of silver phosphate used in accordance with one embodiment of the present invention at various temperatures.
Figure 6 is a current-voltage diagram for the prototype device of example 1 at a pressure of 3 GPa.
Figure 7 is a current-voltage diagram for the prototype device of example 2 at a pressure of 6.5 GPa.
Detailed Description
The invention will be further described with reference to the accompanying drawings.
The "ranges" disclosed herein are in the form of lower and upper limits. There may be one or more lower limits, and one or more upper limits, respectively. The given range is defined by the selection of a lower limit and an upper limit. The selected lower and upper limits define the boundaries of the particular range. All ranges that can be defined in this manner are inclusive and combinable, i.e., any lower limit can be combined with any upper limit to form a range. For example, ranges of 60-120 and 80-110 are listed for particular parameters, with the understanding that ranges of 60-110 and 80-120 are also contemplated. Furthermore, if the minimum range values 1 and 2 are listed, and if the maximum range values 3, 4, and 5 are listed, the following ranges are all contemplated: 1-3, 1-4, 1-5, 2-3, 2-4 and 2-5.
In the present invention, unless otherwise stated, the numerical range "a-b" represents a shorthand representation of any combination of real numbers between a and b, where a and b are both real numbers. For example, a numerical range of "0 to 5" indicates that all real numbers between "0 to 5" have been listed herein, and "0 to 5" is only a shorthand representation of the combination of these numbers.
The term "two" as used herein means "at least two" if not otherwise specified.
In the present invention, all embodiments and preferred embodiments mentioned herein may be combined with each other to form a new technical solution, if not specifically stated.
In the present invention, all the technical features mentioned herein and preferred features may be combined with each other to form a new technical solution, if not specifically stated.
In the present invention, all the steps mentioned herein may be performed sequentially or randomly, if not specifically stated, but preferably sequentially. For example, the method comprises steps (a) and (b), meaning that the method may comprise steps (a) and (b) performed sequentially, and may also comprise steps (b) and (a) performed sequentially. For example, reference to the process further comprising step (c) means that step (c) may be added to the process in any order, for example, the process may comprise steps (a), (b) and (c), may also comprise steps (a), (c) and (b), may also comprise steps (c), (a) and (b), etc.
In the present invention, the term "comprising" as used herein means either an open type or a closed type unless otherwise specified. For example, the term "comprising" may mean that other components not listed may also be included, or that only listed components may be included.
In the present invention, the terms "resistive switching material", "solid electrolyte material" are used interchangeably to denote the material sandwiched between two electrodes in the device of the present invention. The material comprises, preferably consists only of, silver phosphate. According to another embodiment of the present invention, other materials, such as other resistive materials, additives, fillers, etc., may be included in the resistive material as needed to achieve desired properties.
The applicant has found that silver phosphate, when it satisfies at least one of the two conditions of "specific pressure applied" and "specific temperature applied", is capable of generating a large amount of mobile silver ions, so that the conductive properties of the silver phosphate can satisfy the requirements required for manufacturing a resistive switch. When at least one of the two conditions is satisfied, a specific voltage is applied to electrodes on both sides of the resistance change material containing silver phosphate, so that erasing and writing operations can be realized, and a resistance switching effect is induced in the resistance change material, so that the purpose of storing information in the resistance change material is realized. More importantly, the stored information in the resistive material is still retained after the temperature, pressure and erase-write voltage are released.
In addition, according to another embodiment of the present invention, the information stored in the resistive switching material may be changed by applying the erase/write voltage again, and in the changing of the stored information, the temperature and/or the pressure may be under normal temperature and/or normal pressure, or may be optionally applied again at a temperature and/or a pressure higher than normal temperature and normal pressure, and the temperature and/or the pressure applied this time may be different from the temperature and/or the pressure applied last time for changing the conductivity of the silver phosphate in the resistive switching material.
According to another embodiment of the present invention, the applying of the erase/write voltage includes applying a cycle of a scan voltage between the two electrodes. The operation of applying the erase/write voltage lasts for several cycles to hundreds or even thousands of cycles; preferably, it lasts for several cycles.
Examples
Preferred embodiments of the present invention are specifically exemplified in the following examples, but it should be understood that the scope of the present invention is not limited thereto.
Example 1
This example 1 examined the influence of pressure and temperature on the electrical conductivity properties of the resistance change material.
The applicant constructed a device with an electrode/resistive material/electrode structure as shown in fig. 1, where both electrodes are made of platinum, the resistive material is 100% pure silver phosphate, the thickness of the silver phosphate between the two electrodes is 50 microns, and the two electrodes are connected to an external power supply. The outer sides of the two electrodes are abutted by a diamond anvil, via which a controlled pressure can be applied to the device by pressure means. Heating means are provided around the device for heating the device to a desired temperature.
Testing one: effect of pressure on silver phosphate conductivity
And applying different pressures to the device through the diamond anvil at room temperature, and measuring the X-ray diffraction spectrum of the silver phosphate sample under different pressures by using an X-ray diffractometer with the emission wavelength of 0.6199 nm. Fig. 2 shows the measurement results, and it can be seen that when the pressure is more than 2.6GPa, a distinct spectrum peak appears in the silver phosphate spectrum peak. The cubic unit cell volume-pressure relationship derived from the spectral peak is consistent with the unit cell volume-pressure relationship of metallic silver, as shown in fig. 3, demonstrating that the spectral peak is derived from metallic silver. The test shows that at pressures above 2.6GPa more silver ions are present in the silver phosphate and part of the silver ions form metallic silver particles, which leads to an increased conductivity of the material. The applicant tests the conductivity of the silver phosphate under the different pressures by using a four-probe resistance measuring technology, and found that the conductivity of the silver phosphate is obviously increased when the pressure is more than 2.6 GPa.
And (2) testing: influence of temperature on silver phosphate conductivity
The device was heated to different temperatures under atmospheric conditions, and the X-ray diffraction pattern of the silver phosphate sample at this time was measured using an X-ray diffractometer having an emission wavelength of 0.6199nm, and the results are shown in fig. 4. It can be seen that when the temperature is higher than 100 degrees, silver peaks appear in the X-ray diffraction spectrum peaks of silver phosphate. This indicates that more mobile silver ions are present in the silver phosphate at high temperatures of 100 c, resulting in an increase in the ionic conductivity of the material. In addition, the conductivity of silver phosphate at different temperatures was also tested by a four-probe resistance measurement technique, and the results are shown in fig. 5. It is clear that the conductivity of silver phosphate increases dramatically at temperatures above 100 degrees, validating the results of X-ray diffraction.
Example 2:
in this example, a resistive switch was fabricated using the device described in example 1, with elevated temperature.
Specifically, in this embodiment, the pressure is selected to be 3GPa while the temperature is set to 200 ℃, and voltage sweep, i.e., erase/write operation, is performed by applying a voltage to the silver phosphate material through the electrode while maintaining the above pressure and temperature. The scanning voltage range is-10V- +10V, and the current passing through the electrode is measured simultaneously, and after scanning for several cycles, the resistance switching phenomenon appears.
And then reducing the temperature to room temperature, and carrying out resistance switching effect test on the device. The scan range of the test voltage at this time is-1.5V- + 1.5V. Fig. 6 is a current-voltage diagram of a prototype device under a pressure of 3GPa, namely a diagram of the effect of resistance switching. It can be seen that when the scanning voltage is increased from 0V to the threshold voltage (about +0.62V), the current increases linearly, and the silver phosphate material is in a high resistance state; when the voltage exceeds the threshold voltage, the current is sharply increased, and the silver phosphate is converted from a high-resistance state to a low-resistance state; when the voltage is reduced from +1.5V to the reverse threshold voltage (about-1.25V), the current is linearly reduced, and the material is still in a low-resistance state; when the voltage exceeds the reverse threshold voltage, the current is sharply reduced, and the silver phosphate is converted from a low-resistance state to a high-resistance state; when the voltage is reduced from-1.5V to 0V, the current is linearly reduced, and the material is in a high-resistance state. The ratio of high resistance to low resistance is about 10, which indicates that the device can be used as a resistive type memory.
Example 3:
in this example, a resistive switch was fabricated using the device described in example 1 under conditions of ambient temperature and high pressure.
Specifically, in this embodiment, the pressure is selected to be 6.5GPa, while the temperature is set to 25 ℃, and voltage sweep, i.e., erase and write operations are performed by applying a voltage to the silver phosphate material through the electrodes while maintaining the above pressure and temperature. The scanning voltage range is-15V- +15V, and the current passing through the electrode is measured simultaneously, and after scanning for several cycles, the resistance switching phenomenon appears. And then carrying out resistance switching effect test on the device. At this time, the scanning range of the test voltage is-2.5V- +2.5V, and the number of scanning times is 20. Fig. 7 is a current-voltage diagram of the device under the pressure of 6.5GPa, namely a diagram of the effect of resistance switching. It can be seen that the resistance high-low states switch back and forth with changes in voltage, similar to fig. 6, and exhibit higher reversibility and stability. The ratio of the high resistance to the low resistance is about 20, which satisfies the conditions for fabricating the memory device. The threshold voltage is about 0.5V, i.e., the operating voltage is small, so that the power consumption of the device is low. In addition, the device has resistance switching function in the pressure range of less than 16.6 GPa.
Claims (5)
1. A method of manufacturing a resistive switch, the method comprising the steps of:
(1) forming a device comprising two electrodes and a resistive switching material sandwiched between and in contact with the two electrodes, the resistive switching material being comprised of silver phosphate, free of other materials, the silver phosphate also being undoped, the electrodes being made of a conductive material selected from the group consisting of: a conductive metal selected from gold, platinum, silver, copper, or an alloy of two or more thereof, or a conductive substance selected from graphite, carbon tubes, graphene;
(2) applying a first pressure and/or a first temperature to the device, the first pressure being higher than normal pressure and the first temperature being higher than normal temperature, wherein
When a first pressure is applied to the device only and the device is at normal temperature, the first pressure is 2.6GPa to 16.6 GPa;
when a first temperature is applied to the device only, and the device is under normal pressure, the first temperature is 100 ℃ to 300 ℃;
under the condition that a first pressure and a first temperature are applied to the device at the same time, the first pressure is 2.6GPa to 16.6GPa, and the first temperature is 100 ℃ to 300 ℃;
(3) applying a first voltage between the two electrodes while maintaining the first pressure and/or first temperature, performing an erase operation, such that the device becomes a resistive switch.
2. The method of claim 1, wherein after step (3), the first pressure and/or first temperature is changed such that after the first pressure and/or first temperature becomes normal temperature and/or normal pressure, information stored in the device in step (3) by performing an erase operation by applying the first voltage is retained.
3. The method of claim 2, further comprising applying a second pressure and/or a second temperature to the resistive switch again, and while maintaining the second pressure and/or second temperature, applying a second voltage different from the first voltage between the two electrodes for performing an additional erase operation when information stored in the device is different from information stored in the device by performing an erase operation by applying the first voltage; the second pressure is normal pressure to 16.6GPa, and the second temperature is normal temperature to 300 ℃.
4. The method of claim 1, wherein the spacing between the electrodes is between 5 nm and 1 mm.
5. The method of claim 3, wherein a first voltage of 0.5V to 30 volts is applied between the two electrodes, the second voltage is 0.5V to 30 volts, and the second voltage is lower than the first voltage; or the second voltage is higher than the first voltage.
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| KR20150092270A (en) * | 2012-12-05 | 2015-08-12 | 이시오닉 코포레이션 | Phosphonium ionic liquids, salts, compositions, methods of making and devices formed therefrom |
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