CN108385057B - Stepped collimator structure for direct-writing vacuum evaporation system - Google Patents

Stepped collimator structure for direct-writing vacuum evaporation system Download PDF

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CN108385057B
CN108385057B CN201810078456.8A CN201810078456A CN108385057B CN 108385057 B CN108385057 B CN 108385057B CN 201810078456 A CN201810078456 A CN 201810078456A CN 108385057 B CN108385057 B CN 108385057B
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particle
blocking step
base
collimating
mask
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CN108385057A (en
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张震
柳铮
闫鹏
鲁帅帅
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Tsinghua University
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Tsinghua University
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

The invention discloses a novel stepped collimating tube structure which is applied to a direct-writing vacuum evaporation system and is used for preventing mask holes from being blocked and avoiding particle scattering. The stepped collimator structure includes: a base, a mask sheet and a collimator; the first particle reflection blocking step is positioned at the upper part in the collimating tube and is connected with the upper surface of the collimating tube and the upper surface of the second particle reflection blocking step; the second particle reflection blocking step is positioned in the middle of the collimating tube and is connected with the lower surface of the first particle reflection blocking step and the upper surface of the collimating hole; and the collimation hole is positioned at the lower part in the collimation tube and is connected with the lower surface of the second particle reflection blocking step and the lower surface of the collimation tube. The direct-writing vacuum evaporation system provided by the embodiment of the invention has the advantages of compact structure, high processing speed, long service life of the mask, clear processing characteristic edge, capability of avoiding particle scattering, material saving, high processing purity and the like.

Description

Stepped collimator structure for direct-writing vacuum evaporation system
Technical Field
The invention relates to a novel stepped collimating tube structure applied to a direct-writing vacuum evaporation system and used for preventing mask holes from being blocked and avoiding particle scattering phenomenon.
Background
The invention discloses a direct-writing vacuum evaporation system and a method thereof (patent number: WO2015100730A 1), and provides the direct-writing vacuum evaporation system, which converts an evaporated high-purity gas-phase target into a gas-phase target beam with a nanoscale size by introducing a nano-moving positioning sample stage and a mask mechanism on the basis of keeping a sample chamber structure of the conventional vacuum evaporation device, and directly deposits the gas-phase target on a substrate, thereby realizing the preparation of a free pattern.
The existing vacuum evaporation device without the moving and positioning sample stage directly attaches photoresist on a sample substrate, so that the function of processing a specific sample shape is realized, and the technical problems of gaseous target beam scattering and the like cannot occur, but for the vacuum evaporation device added with the moving and positioning sample stage, the problem of particle scattering is easy to occur due to the fact that a micron-sized gap possibly exists between a mask and the substrate and the dimension of a mask hole (less than 1 mu m); meanwhile, the gaseous target beam flow which is not collimated in the movement direction can also cause the blockage of the mask hole (the evaporated gaseous target particle flow hits the inner wall of the mask hole to be condensed, so that the blockage of the mask hole is caused), and the service life of the mask hole is shortened. In order to solve the problems of particle scattering, mask hole blockage and the like, the motion analysis is carried out on the gaseous target particle flow generated by vacuum evaporation, the scheme that a collimator is used for filtering a point particle source into a parallel particle source is innovatively provided, meanwhile, a stepped hole structure is adopted, the mask hole blockage caused by target particle reflection is ingeniously avoided by blocking a particle reflection path, the problems of scattering and mask hole blockage are solved under the condition that the mechanism complexity, the processing difficulty and the processing cost are minimally increased, and the processing requirement of a crucible and the replacement cost of a mask are greatly reduced.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art. To this end, an object of the present invention is to provide a mask structure applied in a direct-write vacuum evaporation system for preventing the mask holes from being blocked and preventing the particle scattering phenomenon.
The novel stepped collimator structure according to the embodiment of the invention comprises: the stepped collimator structure includes: a base; the mask sheet is positioned at the center of the upper surface of the base, the upper surface of the mask sheet is as high as the upper surface of the base, and the mask sheet is adhered and fixed by glue; the collimator is positioned in the center of the lower surface of the base, is perpendicular to the lower surface of the base and is fixed in a threaded fit mode; the first particle reflection blocking step is positioned at the upper part in the collimating tube and is connected with the upper surface of the collimating tube and the upper surface of the second particle reflection blocking step; the second particle reflection blocking step is positioned in the middle of the collimating tube and is connected with the lower surface of the first particle reflection blocking step and the upper surface of the collimating hole; and the collimation hole is positioned at the lower part in the collimation tube and is connected with the lower surface of the second particle reflection blocking step and the lower surface of the collimation tube.
According to the novel stepped collimating tube structure provided by the embodiment of the invention, the collimation of the point light source particle flow is realized by blocking the primary and secondary particle reflections by the first particle reflection blocking step and the second particle reflection blocking step, so that the blockage of a mask hole is prevented. Meanwhile, the point light source particle flow is screened through the collimating holes, the particle flow irradiated to the mask holes can be approximate to a parallel light source, and the particle scattering phenomenon is prevented.
Therefore, the novel stepped collimating tube structure provided by the embodiment of the invention has the advantages of long service life of the mask, capability of avoiding particle scattering and the like.
In addition, the novel stepped collimator structure according to the above embodiment of the present invention may also have the following additional technical features:
according to one embodiment of the invention, the upper surface of the mask sheet is in the same plane as the upper surface of the base, and the collimator is directly connected with the base and is in threaded fit with the base, and is not directly connected with the mask sheet. The mask sheet and the sample substrate can be assembled more precisely, scattering is effectively reduced, the influence of non-collimated particle flow is further reduced, the processing difficulty is low, the assembly difficulty is low, the size of the vacuum cavity of the vacuum evaporation device is reduced, the processing and evaporation material cost can be effectively reduced, and the vacuum degree is improved.
Therefore, the novel stepped collimating tube structure provided by the embodiment of the invention has the advantages of compact structure, high processing speed, clear processing characteristic edge, material saving, high processing purity and the like.
According to an embodiment of the present invention, in the stepped collimator structure, the base is rotationally symmetric about a center, the mask sheet is located at the center of rotation of the base and connected to the upper surface of the base, and the collimator is located at the center of rotation of the base and connected to the lower surface of the base.
According to one embodiment of the invention. The novel step type collimator structure further comprises: the upper surface of the mask sheet and the upper surface of the base are in the same plane; the collimator is directly connected with the base, is matched with the base by threads, and is not directly connected with the mask sheet.
Thus, the alignment structure can be easily assembled, so that the mask sheet and the collimator can be easily attached to the susceptor.
The particle reflection blocking step in the novel stepped collimating tube structure according to an embodiment of the present invention further includes: the particle reflection blocking step comprises the first particle reflection blocking step and the second particle reflection blocking step; the first particle reflection blocking step is positioned at the upper part in the collimating tube and is connected with the upper surface of the collimating tube and the upper surface of the second particle reflection blocking step, the step extension height of the first particle reflection blocking step is just coincided with the primary particle reflection point, and the step extension depth of the first particle reflection blocking step can contain all paths of primary particle reflection; and the second particle reflection blocking step is positioned in the middle of the collimating tube and connected with the lower surface of the first particle reflection blocking step and the upper surface of the collimating hole, the step extension height of the second particle reflection blocking step is just coincided with the secondary particle reflection point, the step extension depth of the second particle reflection blocking step can contain all paths of secondary particle reflection, and the secondary particle reflection refers to the particle flow which is subjected to 2-time reflection striking on the inner wall of the mask hole on the inner wall of the collimating hole.
According to an embodiment of the present invention, the particle reflection blocking step is an anti-reflection mechanism with a compact structure and simple processing, and is not limited to L type steps with fixed side length and vertical angle, and another embodiment of the present invention is a V-shaped recess or L type steps with an angle different from 90 °.
According to an embodiment of the invention, the collimation hole is a compact and simple collimation mechanism, the radius and the depth of the collimation hole can be designed and adjusted according to specific situations, and the collimation hole is not a tubular structure with fixed radius and depth.
Through design step and collimation tubular shape and size, the demand of the required collimation degree of satisfying design that can be light avoids the rising of the assembly degree of difficulty that the structure excessively worried and leads to simultaneously.
Drawings
FIG. 1 is a front view, a top view, and a cross-sectional view of a novel stepped collimator structure according to one embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a novel stepped collimator structure according to an embodiment of the present invention;
FIG. 3 is an enlarged view of area A in FIG. 2;
fig. 4 is an enlarged view of the region B in fig. 3;
reference numerals:
base 10 and base body 101
Mask sheet 20, mask sheet body 201, mask sheet sub-plane 202, mask aperture 203
A collimator 30, a collimator body 301, a first particle reflection blocking step 302, a second particle reflection blocking step 303, and a collimator hole 304
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
A novel stepped collimator structure according to an embodiment of the invention is described below with reference to fig. 1-4. As shown in fig. 1-4, the stepped collimator structure according to an embodiment of the present invention includes: a base 101; the mask sheet 201 is positioned at the center of the upper surface of the base 101, the upper surface of the mask sheet 201 is equal to the upper surface of the base 101 in height, and the mask sheet 201 is adhered and fixed by glue; the collimator 301 is positioned in the center of the lower surface of the base 101, is perpendicular to the lower surface of the base 101, and is fixed in a threaded fit mode; the first particle reflection blocking step 302 is positioned at the inner upper part of the collimator 301, and is connected with the upper surface of the collimator 301 and the upper surface of the second particle reflection blocking step 303; the second particle reflection blocking step 303, the second particle reflection blocking step 303 is positioned in the middle of the collimator 301, and is connected with the lower surface of the first particle reflection blocking step 302 and the upper surface of the collimator hole 304; and a collimating hole 304, wherein the collimating hole 304 is positioned at the inner lower part of the collimating tube 301 and is connected with the lower surface of the second particle reflection blocking step 303 and the lower surface of the collimating tube 301.
The operation of the novel stepped collimator structure according to an embodiment of the present invention is described below with reference to fig. 1-4. When the point light source particle flow is emitted from the vacuum evaporation crucible, the collimating hole 304 at the lowest part of the collimator 301 intercepts the spherical target particle propagation surface, and the particle flow close to collimation is taken out by means of small-radius interception. Of the intercepted target particle flow, the truly collimated target particle flow is directed to the mask sheet 201, and the collimated target particle flow with the cross-sectional radius smaller than 1 μm is formed through the mask holes 203 on the secondary plane 202 of the mask sheet and is hit on the sample substrate to be condensed, so that the quantum device is prepared. The non-collimated target particle flow hits the collimating hole 304, the second particle reflection blocking step 303 and the first particle reflection blocking step 302 during the traveling process, and may be reflected for multiple times, and finally, the non-collimated target particle flow is condensed on the inner wall of the collimating tube 301 and the lower surface of the base 101, and may be subjected to processing work such as cleaning after processing.
According to the novel stepped collimating tube structure provided by the embodiment of the invention, the first particle reflection blocking step 302 and the second particle reflection blocking step 303 block primary and secondary particle reflections to realize collimation of the point light source target particle flow, so that the mask hole 203 is prevented from being blocked. Meanwhile, the point light source target particle flow is screened through the collimating holes 304, so that the target particle flow irradiated to the mask holes 203 can be approximate to a parallel light source, and the particle scattering phenomenon is prevented.
Advantageously, the novel stepped collimating tube structure according to the embodiment of the invention has the advantages of long mask service life, capability of avoiding particle scattering and the like.
According to an embodiment of the present invention, the upper surface of the mask 201 is in the same plane as the upper surface of the base 101, and the collimator 301 is directly connected to the base 101 and is screwed to the base 101, and is not directly connected to the mask 201. Therefore, the mask sheet 201 and the sample substrate (not shown in the figure) can be assembled more precisely, scattering is effectively reduced, the influence of non-collimated particle flow is further reduced, and meanwhile, the processing difficulty and the assembly difficulty are low, so that the volume of a vacuum cavity (not shown in the figure) of the vacuum evaporation device is reduced, the processing and evaporation material cost can be effectively reduced, and the vacuum degree is improved.
Advantageously, the novel stepped collimating tube structure provided by the embodiment of the invention has the advantages of compact structure, high processing speed, clear processing characteristic edge, material saving, high processing purity and the like.
As shown in fig. 1 to 4, the base 101 has rotational symmetry about the center, the mask sheet 201 is located at the center of rotation of the base and connected to the upper surface of the base 101, and the collimator 301 is located at the center of rotation of the base 101 and connected to the lower surface of the base 101.
As shown in fig. 2, the first particle reflection blocking step 302 is located at the upper portion of the collimator 301, and is connected to the upper surface of the collimator 301 and the upper surface of the second particle reflection blocking step 303, the step extension height of the first particle reflection blocking step is exactly coincident with the primary particle reflection point, the step extension depth of the first particle reflection blocking step may include all paths of the primary particle reflection, the second particle reflection blocking step 303 is located at the middle portion of the collimator 301, and is connected to the lower surface of the first particle reflection blocking step 302 and the upper surface of the collimating hole 304, the step extension height of the second particle reflection blocking step is exactly coincident with the secondary particle reflection point, the step extension depth of the second particle reflection blocking step may include all paths of the secondary particle reflection, and the secondary particle reflection refers to the particle flow that is hit on the inner wall of the mask hole 203 by 2 times of reflection on the inner walls of the collimating hole 304, the second.
Advantageously, since the influence of the secondary reflection is considered and the absorption rate of the evaporated particle stream after striking is very high, the novel stepped collimator structure according to the embodiment of the present invention can directly consider that all the particles striking the inner walls of the collimating hole 304, the second particle reflection blocking step 303, and the first particle reflection blocking step 302 are absorbed regardless of the kind of the vacuum evaporation material.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.

Claims (4)

1. A stepped collimator structure for use in a direct-write vacuum evaporation system for preventing blockage of mask apertures and for preventing scattering of particles, comprising:
a base;
the mask sheet is positioned at the center of the upper surface of the base, the upper surface of the mask sheet is as high as the upper surface of the base, and the mask sheet is fixed by vacuum glue;
the collimator is positioned in the center of the lower surface of the base, is perpendicular to the lower surface of the base and is fixed in a threaded fit mode;
the collimation mechanism comprises a particle reflection blocking step and a collimation hole;
the particle reflection blocking step is used for preventing particle flow evaporated by vacuum from striking the inner wall of the collimating tube and reflecting the particle flow to the mask hole to cause the blockage of the mask hole;
the collimating hole is used for primarily screening collimated particle flow so as to inhibit the particle scattering phenomenon;
the first particle reflection blocking step is positioned at the upper part in the collimating tube and is connected with the upper surface of the collimating tube and the upper surface of the second particle reflection blocking step, the step extension height of the first particle reflection blocking step is just coincided with the primary particle reflection point, and the step extension depth of the first particle reflection blocking step can include all paths of primary particle reflection;
the second particle reflection blocking step is positioned in the middle of the collimating tube and connected with the lower surface of the first particle reflection blocking step and the upper surface of the collimating hole, the step extension height of the second particle reflection blocking step is just coincided with the secondary particle reflection point, the step extension depth of the second particle reflection blocking step can include all paths of secondary particle reflection, and the secondary particle reflection refers to the particle flow which is subjected to 2-time reflection striking on the inner wall of the mask hole on the inner wall of the collimating hole;
and the collimation hole is positioned at the lower part in the collimation tube and is connected with the lower surface of the second particle reflection blocking step and the lower surface of the collimation tube.
2. The stepped collimating tube structure of claim 1, wherein a particle reflection blocking step is intermediate the collimating aperture and the mask aperture to block reflection of the stream of target particles by excluding the path of particles hitting the inner wall of the mask aperture.
3. The stepped collimating tube structure of claim 1, further comprising:
the upper surface of the mask sheet and the upper surface of the base are in the same plane; and
the collimator is directly connected with the base, is matched with the base by threads, and is not directly connected with the mask sheet.
4. The stepped collimator structure of claim 1, wherein the base is rotationally symmetric about a center, the mask sheet is located at the base rotational center and is attached to the base upper surface, and the collimator is located at the base rotational center and is attached to the base lower surface.
CN201810078456.8A 2018-01-26 2018-01-26 Stepped collimator structure for direct-writing vacuum evaporation system Active CN108385057B (en)

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US20050006223A1 (en) * 2003-05-07 2005-01-13 Robert Nichols Sputter deposition masking and methods
CN100348772C (en) * 2003-12-25 2007-11-14 中芯国际集成电路制造(上海)有限公司 Temperature control device for collimator in physical vapour deposition system
CN100434353C (en) * 2006-01-24 2008-11-19 南京大学 Gas phase synthesis process of nanometer particle array with one-dimensional diameter and number density gradient
CN101962754B (en) * 2009-07-24 2013-03-20 鸿富锦精密工业(深圳)有限公司 Film coating device
US10644239B2 (en) * 2014-11-17 2020-05-05 Emagin Corporation High precision, high resolution collimating shadow mask and method for fabricating a micro-display
JP2019516865A (en) * 2016-05-24 2019-06-20 イマジン・コーポレイション High precision shadow mask deposition system and method thereof
CN106676482B (en) * 2017-01-22 2019-08-13 魏永强 Liner ladder pipe and the compound multi-stage magnetic field arc ions electroplating method of perforated baffle

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