CN108381378A - A kind of atomization ultrasound polishing method based on GaAs wafers - Google Patents
A kind of atomization ultrasound polishing method based on GaAs wafers Download PDFInfo
- Publication number
- CN108381378A CN108381378A CN201810099930.5A CN201810099930A CN108381378A CN 108381378 A CN108381378 A CN 108381378A CN 201810099930 A CN201810099930 A CN 201810099930A CN 108381378 A CN108381378 A CN 108381378A
- Authority
- CN
- China
- Prior art keywords
- polishing
- polishing method
- gaas wafers
- ultrasonic
- atomization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 56
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 30
- 235000012431 wafers Nutrition 0.000 title claims abstract description 28
- 238000000889 atomisation Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000002604 ultrasonography Methods 0.000 title claims abstract description 13
- 239000012530 fluid Substances 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000004094 surface-active agent Substances 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- -1 alkyl phenol Chemical compound 0.000 claims description 3
- 238000013459 approach Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 3
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 238000001291 vacuum drying Methods 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 2
- 239000006229 carbon black Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000003902 lesion Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention provides a kind of atomization ultrasound polishing method based on GaAs wafers, by using specific polishing fluid, specific atomization ultrasound voltage, specific polishing pad rotating speed and polish pressure, ultrasonic atomizatio polishing is carried out to GaAs wafers, with using traditional polishing fluid to obtain wafer surface defects less, stress is lower, and surface quality is more preferably.
Description
Technical field
The present invention relates to semiconductor device fabrication fields, are polished more particularly, to a kind of atomization ultrasound based on GaAs wafers
Technique.
Background technology
With the continuous development of current era semi-conductor industry, GaAs monocrystal materials have become semiconductor devices sum aggregate
It is also being continuously improved at basic function material particularly important in circuit, while to the surface quality requirements of GaAs wafers.Chemistry
Mechanical polishing (CMP) is current one of the mainstream technology for realizing the planarizing of GaAs crystal column surfaces, but there is throwings in tradition CMP
The drawbacks such as light liquid largely wastes, material removal is inconsistent, abrasive grain is unevenly distributed.For drawback present in above-mentioned tradition CMP, originally
Application proposes ultrasonic atomization and applies liquid polishing method, has been greatly saved the consumption of polishing fluid and has further improved GaAs crystalline substances
Round surface quality, and applicant gropes through a large number of experiments, finds under specific burnishing parameters, can obtain quality of finish
Excellent GaAs wafers.
Invention content
For the above-mentioned problems in the prior art, the application provide it is a kind of for GaAs wafers have specific polishing
The polishing method of parameter, to obtain, surface damage degree is low, the good GaAs wafers of surface roughness.
The technical solution of the application is as follows：
A kind of atomization ultrasound polishing method based on GaAs wafers, this approach includes the following steps：
Polishing fluid is poured into ultrasonic atomizer, the polishing fluid be include deionized water, Ludox, surfactant,
The mixed solution of white carbon；
GaAs wafers are adhered to the lower surface of the carrying disk of ultrasonic atomizatio burnishing device, and are in close contact with polishing pad；
The voltage 50-55v of ultrasonic atomizer, turn of polishing pad is arranged in the top cover labyrinth for closing ultrasonic atomizatio burnishing device
Speed is 55-60r/min, polish pressure 7-9psi；
By the nozzle alignment GaAs wafers lower surface of the ultrasonic atomizer, ultrasonic atomizer is opened, starts to polish.
Using supersonic wave cleaning machine to the wafer cleaning after polishing, and drying and processing is carried out in vacuum drying chamber.
Wherein by the deionized water of 80-100 mass parts, the silica gel of 50-70 mass parts, the surfactant of 2-3 mass parts,
Uniform stirring after the white carbon mixing of 10-15 mass parts, makes surfactant fully dissolve, in ultrasonic disperse 20-30 minutes, obtains
To the polishing fluid.
Wherein surfactant is alkyl phenol polyoxyethylene ether.
Wherein the grain size of white carbon is 15nm.
Wherein polishing pad rotating speed is 60r/min, polish pressure 8psi.
The beneficial effects of the present invention are：
By using atomization ultrasound polishing method, the consumption of polishing fluid is saved, and using specific polishing fluid, specific
The burnishing parameters such as voltage, specific polishing pad rotating speed and specific polish pressure are atomized, the GaAs with excellent polishing surface is obtained
Wafer.
Description of the drawings：
Attached drawing 1 is the ultrasonic atomizatio burnishing device that the embodiment of the present application uses.
Attached drawing 2 is the GaAs crystal column surface micro-structure diagrams obtained using the application ultrasonic atomizatio burnishing parameters.
Attached drawing 3 is the GaAs crystal column surface micro-structure diagrams obtained using traditional polishing fluid.
Wherein：1 --- carrying disk
2 --- polishing pad
3 --- workbench
4 --- rotary shaft
5 --- lower capsul
6 --- pedestal
7 --- top cover labyrinth
8 --- excusing from death atomizer
Specific implementation mode：
Atomization ultrasound polishing method based on GaAs wafers, this approach includes the following steps：
Polishing fluid is configured first, by the deionized water of 80-100 mass parts, the silica gel of 50-70 mass parts, 2-3 mass parts
Surfactant, uniform stirring after the white carbon mixing of 10-15 mass parts, makes surfactant fully dissolve, in ultrasonic disperse
20-30 minutes.Wherein, surfactant is alkyl phenol polyoxyethylene ether, and the grain size of white carbon is 15nm.
Compared to traditional SiO2 polishing fluids, due to being added to the white carbon and use alkane that grain size is 15nm in the application
For base phenol polyethenoxy ether as surfactant, the GaAs crystal column surface lesion depths after polishing are shallower, reduce wafer defect
With the generation of stress.
Then, GaAs wafers are adhered to the lower surface of the carrying disk 1 of ultrasonic atomizatio burnishing device, and tight with polishing pad 2
Contiguity is touched.Top cover labyrinth 7 is closed, prevents air in subsequent atomization polishing process from entering polishing intracavitary.
The voltage swing of atomizer directly influences the grain size of fog-supplying amount and spray film, to the surface layer of workpiece in polishing process
Quality plays a crucial role.The grain size of spray film becomes smaller as voltage increases simultaneously, is conducive to be uniformly distributed in throwing
Optical interface and the risk for reducing agglomerate grain finally take away the damaging layer of crystal column surface under the effect of the mechanical grinding of abrasive grain.
The voltage that the present embodiment chooses ultrasonic atomizer is 50-55v；
About polishing pad rotating speed, when polishing pad rotating speed is relatively low, the abrasive grain and polishing pad reaction in atomized liquid are insufficient, brilliant
The damaging layer removal of circular surfaces is insufficient；Under high speed conditions, polishing fluid can be thrown away polishing interface by centrifugal force, cause silicon chip
Cooling effect reduce, polishing interface temperature increase, cause inside wafer generate cycle internal stress, ultimately cause internal tiny crack
Germinating.Originally it is that embodiment goes polishing pad rotating speed for 60r/min.
About polish pressure, when pressure is relatively low, the surface damage depth of silicon chip is bigger, when pressure is too big,
It was found that surface damage depth starts to show increase tendency, and there is different degrees of cut.The present embodiment is using 8psi's
Polish pressure.
The nozzle 8 of the ultrasonic atomizer is directed at GaAs wafers lower surface, ultrasonic atomizer is opened, starts to polish.
Using supersonic wave cleaning machine to the wafer cleaning after polishing, and drying and processing is carried out in vacuum drying chamber, obtain
The good GaAs wafers of surface quality.
By the GaAs of the GaAs wafers (referring to attached drawing 2) polished using above-mentioned ultrasonic atomizatio and traditional polishing fluid polishing
Wafer (referring to attached drawing 3) observes comparison under the microscope, it can be found that brilliant using the GaAs that the application ultrasonic atomizatio parameter obtains
Round surface quality is more much better than the GaAs surface quality that traditional polishing fluid polishes.
Claims (5)
1. a kind of atomization ultrasound polishing method based on GaAs wafers, this approach includes the following steps：
(1) polishing fluid is poured into ultrasonic atomizer, the polishing fluid be include deionized water, it is Ludox, surfactant, white
The mixed solution of carbon black；
(2) GaAs wafers are adhered to the lower surface of the carrying disk of ultrasonic atomizatio burnishing device, and are in close contact with polishing pad；
(3) top cover labyrinth for closing ultrasonic atomizatio burnishing device, is arranged the voltage 50-55v of ultrasonic atomizer, the rotating speed of polishing pad
For 55-60r/min, polish pressure 7-9psi；
(4) by the nozzle alignment GaAs wafers lower surface of the ultrasonic atomizer, ultrasonic atomizer is opened, starts to polish；
(5) it utilizes supersonic wave cleaning machine to the wafer cleaning after polishing, and carries out drying and processing in vacuum drying chamber.
2. atomization ultrasound polishing method according to claim 1, by the deionized water of 80-100 mass parts, 50-70 mass
The silica gel of part, the surfactant of 2-3 mass parts, uniform stirring after the white carbon mixing of 10-15 mass parts make surfactant
Fully dissolving obtained the polishing fluid in ultrasonic disperse 20-30 minutes.
3. atomization ultrasound polishing method according to claim 2, wherein surfactant are alkyl phenol polyoxyethylene ether.
4. atomization ultrasound polishing method according to claim 3, the wherein grain size of white carbon are 15nm.
5. atomization ultrasound polishing method according to claim 2, wherein polishing pad rotating speed are 60r/min, polish pressure is
8psi。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810099930.5A CN108381378A (en) | 2018-02-01 | 2018-02-01 | A kind of atomization ultrasound polishing method based on GaAs wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810099930.5A CN108381378A (en) | 2018-02-01 | 2018-02-01 | A kind of atomization ultrasound polishing method based on GaAs wafers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108381378A true CN108381378A (en) | 2018-08-10 |
Family
ID=63074758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810099930.5A Pending CN108381378A (en) | 2018-02-01 | 2018-02-01 | A kind of atomization ultrasound polishing method based on GaAs wafers |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108381378A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110039405A (en) * | 2019-03-20 | 2019-07-23 | 广东工业大学 | A kind of pressurised atomised spray equipment, burnishing device and polishing method |
| CN117773697A (en) * | 2024-02-23 | 2024-03-29 | 山东旭辉玻璃科技有限公司 | Cutting corner polishing equipment for agricultural machinery glass |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003243343A (en) * | 2002-02-22 | 2003-08-29 | Sumitomo Electric Ind Ltd | POLISHING METHOD AND DEVICE FOR GaAs WAFER |
| JP2005046947A (en) * | 2003-07-28 | 2005-02-24 | Nippei Toyama Corp | Mechanochemical polishing method and mechanochemical polishing device |
| CN101468448A (en) * | 2007-12-28 | 2009-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical polishing technological process |
| CN102009385A (en) * | 2010-11-02 | 2011-04-13 | 北京通美晶体技术有限公司 | Chemical mechanical polishing method for semiconductor wafer |
| CN102174295A (en) * | 2011-03-25 | 2011-09-07 | 江南大学 | Alkaline silicon dioxide polishing solution suitable for fine atomization CMP |
| CN102668043A (en) * | 2009-10-30 | 2012-09-12 | 康宁股份有限公司 | Semiconductor wafer re-use using chemical mechanical polishing |
| CN102672551A (en) * | 2012-05-22 | 2012-09-19 | 江南大学 | Ultrasonic atomization type polishing machine |
| JP2014117776A (en) * | 2012-12-17 | 2014-06-30 | Ebara Corp | Polishing method |
| CN104736296A (en) * | 2012-08-24 | 2015-06-24 | 埃科莱布美国股份有限公司 | Methods of polishing sapphire surfaces |
| CN205668203U (en) * | 2016-07-12 | 2016-11-02 | 吉姆西半导体科技（无锡）有限公司 | A kind of chemical mechanical polishing apparatus |
-
2018
- 2018-02-01 CN CN201810099930.5A patent/CN108381378A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003243343A (en) * | 2002-02-22 | 2003-08-29 | Sumitomo Electric Ind Ltd | POLISHING METHOD AND DEVICE FOR GaAs WAFER |
| JP2005046947A (en) * | 2003-07-28 | 2005-02-24 | Nippei Toyama Corp | Mechanochemical polishing method and mechanochemical polishing device |
| CN101468448A (en) * | 2007-12-28 | 2009-07-01 | 安集微电子（上海）有限公司 | Chemical mechanical polishing technological process |
| CN102668043A (en) * | 2009-10-30 | 2012-09-12 | 康宁股份有限公司 | Semiconductor wafer re-use using chemical mechanical polishing |
| CN102009385A (en) * | 2010-11-02 | 2011-04-13 | 北京通美晶体技术有限公司 | Chemical mechanical polishing method for semiconductor wafer |
| CN102174295A (en) * | 2011-03-25 | 2011-09-07 | 江南大学 | Alkaline silicon dioxide polishing solution suitable for fine atomization CMP |
| CN102672551A (en) * | 2012-05-22 | 2012-09-19 | 江南大学 | Ultrasonic atomization type polishing machine |
| CN104736296A (en) * | 2012-08-24 | 2015-06-24 | 埃科莱布美国股份有限公司 | Methods of polishing sapphire surfaces |
| JP2014117776A (en) * | 2012-12-17 | 2014-06-30 | Ebara Corp | Polishing method |
| CN205668203U (en) * | 2016-07-12 | 2016-11-02 | 吉姆西半导体科技（无锡）有限公司 | A kind of chemical mechanical polishing apparatus |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110039405A (en) * | 2019-03-20 | 2019-07-23 | 广东工业大学 | A kind of pressurised atomised spray equipment, burnishing device and polishing method |
| CN110039405B (en) * | 2019-03-20 | 2024-01-05 | 广东工业大学 | Pressurized atomizing spray device, polishing device and polishing method |
| CN117773697A (en) * | 2024-02-23 | 2024-03-29 | 山东旭辉玻璃科技有限公司 | Cutting corner polishing equipment for agricultural machinery glass |
| CN117773697B (en) * | 2024-02-23 | 2024-05-14 | 山东旭辉玻璃科技有限公司 | Cutting corner polishing equipment for agricultural machinery glass |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102343547A (en) | Thermochemistry mechanical polishing method of sapphire substrate material and polishing solution | |
| CN108381378A (en) | A kind of atomization ultrasound polishing method based on GaAs wafers | |
| CN109866084A (en) | A kind of UV photocatalysis assistant chemical mechanical polishing apparatus and polishing method | |
| TW200416847A (en) | Rinsing after chemical-mechanical planarization process applied on a wafer | |
| US20040025911A1 (en) | Apparatus for cleaning a semiconductor substrate by vibrating cleaning solution supplied onto the substrate | |
| CN106010297B (en) | A kind of preparation method of alumina polishing solution | |
| CN111300259A (en) | Grinding and polishing device for silicon carbide wafer and manufacturing process method thereof | |
| KR20190118123A (en) | Processing method of wafer | |
| CN112975578B (en) | Polishing method for improving surface roughness of silicon polished wafer | |
| KR102168107B1 (en) | Surface coating layer making method for magneto-rheological fluids’s magnetic particle and Flat surface grinding apparatus same the using | |
| JP5357561B2 (en) | Manufacturing method of semiconductor wafer with uniform surface polishing | |
| US20150165588A1 (en) | Chemical mechanical polishing conditioner with high quality abrasive particles | |
| CN103272796B (en) | A kind of cleaning method of high-cleanness, high monocrystalline silicon abrasive sheet | |
| CN212044170U (en) | Grinding and polishing device for silicon carbide wafers | |
| CN109702625A (en) | A kind of silicon wafer single-sided polishing devices and methods therefor | |
| JP2009111094A (en) | Wafer mirror polishing method | |
| CN112216602A (en) | Polishing method for indium antimonide single crystal wafer | |
| CN103400759B (en) | The Ginding process of indium phosphide planar lightwave circuit waveguide chip and fixture | |
| TWI768329B (en) | Physical dry surface treatment method of semiconductor wafer and composition for surface treatment thereof | |
| CN106098865B (en) | A method of improving LED and grinds away side with Sapphire Substrate | |
| CN107154366A (en) | Silicon wafer polishing device | |
| TWI847229B (en) | Polishing equipment and polishing method | |
| CN105171536B (en) | Chemical and mechanical grinding method | |
| US20030064595A1 (en) | Chemical mechanical polishing defect reduction system and method | |
| TWI833902B (en) | Wafer processing methods |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180810 |