CN108369852B

CN108369852B - Interposer with integrated magnetic device

Info

Publication number: CN108369852B
Application number: CN201680058602.XA
Authority: CN
Inventors: 方向明; 伍荣翔; 单建安
Original assignee: Shenzhen Coileasy Technologies Co ltd
Current assignee: Shenzhen Line Easy Microelectronics Co.,Ltd.
Priority date: 2016-04-13
Filing date: 2016-04-13
Publication date: 2021-05-28
Anticipated expiration: 2036-04-13
Also published as: CN108369852A; WO2017177389A1

Abstract

An interposer (300, 400, 500, 600, 700, 800, 900, 1000, 1100, 1200) with an integrated magnetic component, the substrate (301, 401, 501, 601, 701, 801) being provided with the magnetic component, the coil of the magnetic component being formed by connecting wires (311, 321, 411, 421, 511, 521, 611, 621, 711, 721, 811, 821, 911, 921, 940, 950, 1011, 1021, 1040, 1050), the wires (311, 321, 411, 421, 511, 521, 611, 621, 711, 721, 811, 821, 911, 921, 940, 950, 1011, 1021, 1040, 1050) being provided within the substrate (301, 401, 501, 601, 701, 801). The resistance of the magnetic device is obviously reduced, the inductance density and the quality factor of the integrated magnetic device are improved, the size of the magnetic device is reduced, the efficiency is improved, the flatness of the surface of the adapter plate is not influenced, the existing metal interconnection line is not occupied, the performance of the integrated magnetic device is improved on the premise of ensuring that the interconnection function of the silicon adapter plate is not damaged, and the integration of the high-performance magnetic device is realized.

Description

Interposer with integrated magnetic device

Technical Field

The present invention relates to integrated circuits, and more particularly, to an integrated magnetic device.

Background

With the development of integrated circuit manufacturing methods, the number of transistors included per unit chip area and functions that can be realized are rapidly increasing. Accordingly, the requirements of integrated circuits for power supply performance have increased. Meanwhile, the development of portable, wearable and implantable electronic devices also puts more strict requirements on the volume of the power supply. Conventional switching-mode power supplies (switched-mode power supplies) significantly limit power supply performance and improvements to switching power supply size due to the need to use discrete magnetic devices, such as discrete inductors.

First, the use of discrete magnetic devices is not conducive to fine grain power management. Complex integrated circuits (systems), such as central processing units CPU, digital signal processors DSP, and graphics processors GPU, typically contain several independent voltage domains (voltage domains). Under different working conditions, the working voltage of each voltage area can be adjusted at any time, so that the total power consumption of the system is optimized. This dynamic voltage regulation method requires a dedicated switching power supply for each voltage range. Since each switching power supply requires at least one magnetic device, such as an inductor, the use of discrete magnetic devices can significantly increase the size and cost of the system.

Second, the use of discrete magnetic devices does not facilitate fast transient response of the power supply. When the load current or voltage changes abruptly, the current or voltage supplied by the power supply should closely follow the load. Discrete magnetic devices, such as discrete inductors, are typically mounted on a printed circuit board by surface mount methods and connected to a load via wiring on the board. Parasitic inductance is introduced into the part of the connection line, so that the speed of current change is limited, and the transient response performance of the power supply is reduced.

Third, discrete magnetic devices are not conducive to miniaturization of the system. The large number of discrete magnetic devices not only occupies the area of the circuit board, but also increases the thickness of the system. The thickness of the discrete magnetic device itself is typically hundreds of microns or even millimeters, while the thickness of the printed circuit board is on the millimeter level. Therefore, it is very difficult to further reduce the area and thickness of the system for the switching power supply using the discrete magnetic device.

In the prior art, a silicon interposer (silicon interposer) is adopted for inductor integration. The inductor is integrated on the silicon adapter plate, so that the inductor and the circuit chip are connected more easily and conveniently, and the problem of system miniaturization is partially solved. However, due to the small thickness and high density of the metal interconnection lines on the front side of the silicon interposer, the use of these metal lines as coils of the integrated inductor significantly limits the performance of the inductor, particularly the power inductor. Therefore, the prior art solutions cannot provide a high performance integrated power inductor on a silicon interposer.

As shown in fig. 1, a system 100 includes two metal interconnection lines 111 and 112 (a front metal layer, which may be more than one layer in practical use) on front surfaces of

silicon interposer

101 and 101, and is connected to a front chip through bumps (bump)121 (e.g., copper pillar bumps) connected to the metal interconnection lines. The chip 131 and the chip 132 are typically flip chip bonded to a silicon interposer. Chip 131 has a large number of ports to be electrically connected to chip 132 through

metal layers

111 and 112 by bumps 121, so

metal layers

111 and 112 have a high wiring density, and typically, the spacing between metal lines is only a few microns, such as 2 microns, and the line width is also small, such as 0.5 micron. The wiring density and width limit the thickness of the

metal layers

111 and 112, for example, 0.5 microns.

The

metal interconnection lines

111 and 112 on the front surface are connected to a metal redistribution layer (back metal layer) 141 on the back surface through-silicon vias (TSVs) 102 on the silicon interposer 101. The back side metal layer 141 is connected to other devices (not shown) by solder balls 142 (e.g., controlled collapse chip interconnects C4) and metal lines 152 on a substrate 151 (e.g., a printed circuit board PCB). Since the back metal line generally has only one layer and the requirement for surface planarization is lower than that of the front metal interconnection line, the width and thickness of the redistribution layer 141 are both looser than those of the front

metal interconnection lines

111 and 112, the width of the metal interconnection line can reach tens of microns, and the thickness of the metal interconnection line can reach several microns.

The inductor 200 on the silicon interposer is generally formed in two structures, one of which is shown in fig. 2-1, in which the front

metal interconnection layers

111 and 112 form a spiral 201, the back metal layer 141 forms a spiral 203, and the through silicon via 202 forms a multi-layer double-sided spiral inductor. In another structure, as shown in fig. 2-2, the inductor 210 on the silicon interposer is formed by forming a metal line 211 from the front

metal interconnection layers

111 and 112, forming a metal line 213 from the back metal layer 141, and forming a spiral inductor from the through-silicon via 212.

The disadvantage of the inductor structure using the

front metal layers

111 and 112 is represented in two aspects: first, the thickness of the front side metal layer is too small to be significantly increased, otherwise the metal line width and line spacing are increased, resulting in a decrease in interconnection density. Therefore, the front metal wire is used as a part of the inductance coil, so that the resistance of the inductance is obviously increased, the power consumption of the inductance is increased, and the inductance efficiency is reduced. Secondly, the routing of the inductor consumes more than one layer of front metal wires in the area where the inductor is located. The reduction in the number of layers of metal lines can limit the flexibility of metal line layout and interconnection in the area, thereby reducing the interconnection capability of the silicon interposer.

In the reference 1US 8,072,042(CN 102479685B), the electrical cross-connection of the metal wires on the front and back sides and the two conductive vias connecting the metal wires is located on the surface of the substrate, and the magnetic core thereof penetrates the entire substrate.

In the documents 2US 20130335059 and 3US 2013/0020675, the metal wires of the inductor are composed of a metal stack formed in a dielectric layer on the front side of a silicon substrate, a through silicon via, and a metal redistribution layer on the back side of a silicon wafer.

In the comparison document 4US 8,143,952(CN 102576657), the first metal forming the inductor coil is the first metal layer formed on the surface of the substrate in the back-end-of-line (BEOL) process.

According to the above, in the prior art, the inductor is integrated on the silicon interposer, so that the performance of the inductor is lost, the function of the silicon interposer is reduced, and an integrated magnetic device with high inductance density and quality factor cannot be integrated in the silicon interposer.

Technical problem

The invention aims to provide an adapter plate with an integrated magnetic device, and aims to improve the performance of the integrated magnetic device.

Solution to the problem

Technical solution

The invention adopts the following technical scheme: the magnetic device is arranged on a substrate, and a coil of the magnetic device is formed by connecting metal wires which are arranged in the substrate.

The metal wire of the invention is a first metal wire and a second metal wire which are electrically connected by a second through hole filled with metal to form a coil.

The coil of the invention is spiral.

The first metal line of the present invention is disposed within the substrate.

The first metal line of the present invention is embedded in a first surface disposed over a substrate.

The second metal line of the present invention is disposed outside the second surface.

The substrate of the present invention is provided therein with a first via hole electrically connecting the second metal line and the first surface and filled with metal therein.

The first metal wire, the second metal wire and the second through hole filled with metal form a coil group, and one group of coils is magnetically coupled with the other group of coils; the first metal wire and the second metal wire of one group of coils and the first metal wire and the second metal wire of the other group of coils are closely adjacent or spaced.

A planar magnetic core is arranged outside the substrate, between the second surface and the second metal wire, and the magnetic circuit of the magnetic core is closed or has a gap.

The second surface of the invention is internally provided with an embedded magnetic core, the embedded magnetic core extends into the substrate from the second surface, and the magnetic circuit of the magnetic core is closed or has a gap.

Advantageous effects of the invention

Advantageous effects

Compared with the prior art, the invention embeds a part of metal wires of the magnetic device in the substrate, obviously reduces the resistance of the magnetic device, improves the inductance density and the quality factor of the integrated magnetic device, reduces the volume of the magnetic device, improves the efficiency, does not influence the flatness of the surface of the adapter plate, does not occupy the existing metal interconnection wires, and realizes the integration of the high-performance magnetic device on the premise of ensuring that the interconnection function of the silicon adapter plate is not damaged.

Brief description of the drawings

Drawings

Fig. 1 is a schematic diagram of a prior art silicon interposer structure.

Fig. 2-1 is a schematic diagram (one) of an integrated inductor structure of the prior art.

Fig. 2-2 is a schematic diagram (two) of an integrated inductor structure in the prior art.

Fig. 3 is a schematic structural view of embodiment 1 of the present invention.

Fig. 4 is a sectional view a-a of fig. 3.

Fig. 5 is a schematic structural view of embodiment 2 of the present invention.

Fig. 6 is a sectional view B-B of fig. 5.

Fig. 7 is a schematic structural view of embodiment 3 of the present invention.

Fig. 8 is a cross-sectional view C-C of fig. 7.

Fig. 9 is a top view of embodiment 4 of the present invention.

Fig. 10 is a top view of embodiment 5 of the present invention.

Fig. 11 is a top view of embodiment 6 of the present invention.

Fig. 12 is a top view of embodiment 7 of the present invention.

Best mode for carrying out the invention

Comparative example 1 is a spiral inductor, the thickness of the interposer was 100 μm, the substrate was made of high-resistance silicon having a resistivity of 1000 Ω · cm, the first metal line was made of copper by a deposition and patterning method of the related art, the first metal line was located on the first surface and had a thickness of 1 μm. The second metal line is made of copper and is obtained by a prior art electroplating method, and is located outside the second surface and has a thickness of 5 μm. The second via hole was made of copper and was obtained by a prior art electroplating method and had a diameter of 20 μm. The spiral inductor has 10 turns, the width of each turn of the coil is 60 μm, and the pitch of the coil is 100 μm. The width (A-A direction) of the spiral inductor on the adapter plate is 500 μm, and the area of the adapter plate is 0.5mm². According to the simulation calculation result of the Ansoft HFSS three-dimensional electromagnetic field simulation system, the inductance value of the spiral inductor is 6.7nH, and the inductance density is 13.4nH/mm²Direct Current (DC)The resistance is 1.7 omega and the quality factor at a typical frequency of 20MHz of a high frequency switching power supply is 0.5.

The example 1 is also a spiral inductor, and the same material and preparation method as those of the comparative example 1 are adopted to obtain a second metal wire and a second through hole. The first metal line 311 is embedded in the interposer 300, the trench is obtained by deep reactive ion etching, using photoresist or silicon dioxide as the etching mask layer, and using C of 60sccm₄F₈Deposition of passivation layer using 150sccm SF₆Mixing O of 15sccm₂And C of 10sccm₄F₈And as etching gas, alternately carrying out etching and passivation steps with the time periods of 15 seconds and 10 seconds by using the radio frequency power of 500W, and gradually etching the groove to the required depth. The first metal line has a thickness of 50 μm. Since the resistance per unit length of the conductive wire is reduced due to the increased thickness of the first metal line 311, the coil can be wound more densely; i.e. the coil width and pitch are reduced to 30 μm and 50 μm respectively, the inductor in example 1 can contain 20 turns of coil in the same area of the interposer. According to the simulation calculation in the same manner as in comparative example 1, the inductance value of the inductor in example 1 was 15.8nH, and the inductor density was 31.6nH/mm²The DC resistance was 1.2. omega. and the quality factor at 20MHz was 1.33. Therefore, under the same area of the interposer inductor, compared with comparative example 1, in example 1, the inductor density can be increased by 2.4 times, the direct-current resistance of the inductor is remarkably reduced by 30%, and the quality factor is increased by 2.7 times.

Comparative example 2 on the basis of the spiral inductor of comparative example 1, Co having a thickness of 2 μm, a relative permeability of 600 and a resistivity of 100 μ Ω · cm was added at a position outside the second surface 520₉₀Ta₅Zr₅As a planar magnetic core 540. The method is obtained by a graphical method after the sputtering process in the prior art. The first metal line, the second metal line and the second via hole were obtained in the same manner as in comparative example 1. According to the simulation calculation of the same method as that of comparative example 1, the inductance value of the inductor in comparative example 2 was 34.5nH, and the inductor density was 69.0nH/mm²The DC resistance was 1.7. omega. and the quality factor at 20MHz was 2.4.

Example 2 the procedure of example 1 was followed to obtain the firstThe metal wire, the second metal wire and the second via hole were used to obtain the planar magnetic core 540 in the same manner as in comparative example 2. According to the simulation calculation in the same manner as in comparative example 1, the inductance value of the inductor in example 2 was 145nH, and the inductor density was 290nH/mm²The DC resistance was 1.2. omega. and the quality factor at 20MHz was 9.9. Under the same area of the interposer inductor, compared with the comparative example 2, the inductor density of the example 2 is increased by 4.2 times, the direct-current resistance of the inductor is reduced by 30%, and the quality factor is increased by 4.1 times.

Comparative example 3 on the basis of the spiral inductor of comparative example 1, NiFe having a thickness of 20 μm, a relative permeability of 600, and a resistivity of 100 μ Ω · cm was added at a position in the second surface 720 as an embedded core 740, and carbon element was added during electroplating to increase the resistivity. The embedded cores 740 are 20 pieces each having a width of 10 μm. And forming grooves on the second surface by using deep reactive ion etching in the prior art, and electroplating and flattening the magnetic material to form the magnetic core embedded into the substrate from the second surface. The first metal line, the second metal line and the second via hole were obtained in the same manner as in comparative example 1. According to the simulation calculation of the same method as that of comparative example 1, the inductance value of the inductor in comparative example 3 is 61.6nH, and the inductor density is 123.2nH/mm²The DC resistance was 1.7. omega. and the quality factor at 20MHz was 2.9.

Example 3 the first metal line, the second metal line and the second via hole were obtained according to the method of example 1, and the embedded magnetic core 740 was obtained according to the method of comparative example 3. According to the simulation calculation in the same manner as in comparative example 1, the inductance value of the inductor in example 3 was 274nH, and the inductor density was 548nH/mm²The DC resistance was 1.2. omega. and the quality factor at 20MHz was 4.75. Under the same area of the interposer inductor, compared with comparative example 3, in example 3, the inductor density is increased by 4.4 times, the direct-current resistance of the inductor is reduced by 30%, and the quality factor is increased by 1.6 times.

Examples of the invention

Modes for carrying out the invention

The present invention will be described in further detail with reference to the accompanying drawings and examples. The interposer with integrated magnetic device of the present invention, taking integrated inductor as an example, illustrates the structure of the interposer (interposer, integrated inductor) with magnetic device and the preparation method thereof.

Example 1, the magnetic device has no core.

As shown in fig. 3, the interposer 300 with integrated magnetic device comprises a substrate 301, a first surface 310 located above the substrate 301, and a second surface 320 located below the substrate 301. The substrate 301 is a semiconductor material or an insulating material, the semiconductor material is silicon, germanium or a compound semiconductor, and the preferred semiconductor material is silicon. The compound semiconductor is gallium nitride (GaN), gallium arsenide (GaAs), silicon carbide (SiC), or silicon germanium (SiGe). The insulating material is glass, quartz or an organic substrate.

A first metal line (embedded metal line) 311 is embedded in the trench under the first surface 310. The trench may be formed in the substrate 301 by etching, for example, deep reactive ion etching (deep reactive ion etch). The first metal line 311 is located inside the substrate 301, and the upper portion thereof is planarized with the first surface 310. On the planarized first surface 310, a plurality of insulating layers and metal layers may be further deposited for forming metal interconnects on the first surface of the interposer, and in fig. 3, the metal interconnects above the first surface 310 are not shown for clarity of illustration of the inductor structure. A second metal line 321 is disposed outside the second surface 320, and the second metal line 321 is electrically connected to the first surface 310 through a metal (via) 331 filled in a first via vertically disposed in the substrate 301, and the second metal line 321 is electrically connected to the lower end 312 of the embedded metal line 311 located in the substrate through a second via 332 vertically disposed in the substrate 301.

In fig. 3, the right end of the first metal line 311 arranged at the front is electrically connected to the right end of the second metal line 321 arranged at the front through a second via 332, the left end of the first metal line 321 is electrically connected to the left end of the second metal line 311 through another second via 332, the right end of the second metal line 311 is electrically connected to the right end of the second metal line 321 through another second via 332, the first metal line 311 and the second metal line 321 are electrically connected to the back, and the left end of the second metal line 321 arranged at the back is electrically connected to the first surface 310 through the first via 331 to form the inductor-integrated coil.

As shown in fig. 4, the interposer 400(300) includes a substrate 401(301), a first surface 410(310), and a second surface 420 (320). The first metal line 411(311) extends from the first surface 410 into the substrate 401 to form an embedded metal line. The first metal line 411 is connected to a second metal line 421(321) located outside the second surface 420 of the substrate through a second via 432(332) located inside the substrate 401. An insulating layer 433 is disposed between the first metal line 411, the second metal line 421, and the second via 432 and the substrate 401. An insulating layer 422 is provided outside the second surface 420, and the second metal line 421 is disposed in the insulating layer 422. The first metal line 411, the second metal line 421 and the second via 432 form a coil of an integrated inductor. When the substrate 401 is made of a semiconductor material, the inductor includes a first metal line 411, a second metal line 421, a second via 432, an insulating layer 433, and an insulating layer 422 outside the second surface 420. For substrates of insulator materials or high resistance silicon, no insulating layer is required. The coil of the integrated inductor is composed of the embedded metal line 411, the second metal line 421 on the second surface, and the second via 432.

One or more metal interconnection layers of metal wires 415, an insulating layer 413 disposed between the metal interconnection layers, and bumps 414 connected to the outermost metal wires may be formed on the first surface 410 by using a process method in the prior art, and the bumps 414 are used for connecting the first surface of the interposer with an external circuit. Since the first metal line 411 and the first surface 410 of the interposer are planarized, and the influence of the uneven surface on the subsequent manufacturing process is reduced, the metal line 415 and the bump 414 are easy to have a small pitch and a small line width, thereby increasing the density of the metal interconnection layer. Therefore, the first surface 410 is more suitable for connecting devices with a larger number of input/output ports, such as a field-programmable gate array (FPGA) chip, a microprocessor chip and a power management chip.

One or more metal interconnection layers of the second metal lines 421, an insulating or passivation layer 422 disposed between the metal interconnection layers, and solder balls 423 connected to the outermost second metal lines may be formed on the second surface 420 by a process method in the prior art, and the solder balls 423 are used to connect the second surface of the interposer with an external circuit. The thickness of the second metal lines 421 is usually larger than the thickness of the metal lines 415, so the pitch and the line width of the second metal lines 421 are usually larger than those of the metal interconnection layer on the first surface 410, and therefore, the second surface is more suitable for connecting devices with larger line width, such as a printed circuit board.

In embodiment 2, the interposer is provided with a planar magnetic core.

Example 2 adds a planar magnetic core located outside the second surface on the basis of example 1.

As shown in fig. 5, the interposer 500(300) includes a substrate 501(301), a first surface 510(310), a second surface 520(320), a first metal line 511(311) embedded in the first surface, a second metal line 521(321) formed outside the second surface, a first via 531(331) and a second via 532(332) for electrical connection.

A planar magnetic core 540 is disposed outside the substrate 501 and between the second surface 520 and the second metal wire 521, and an insulating layer is covered around the planar magnetic core 540 for insulating the planar magnetic core 540 from the second metal wire 521 and the substrate 501. The planar magnetic core 540 is obtained by deposition such as sputtering, evaporation or plating and patterning. The planar magnetic core 540 is formed of a material layer having a high magnetic permeability, such as an alloy, an oxide, or a composite of nickel (Ni), iron (Fe), cobalt (Co), and manganese (M) magnetic elements, or a high magnetic permeability material layer and an insulating laminate sheet (laminate). The first metal wire 511, the second via 532 and the second metal wire 521 form a coil of an integrated inductor, and the coil surrounds the planar magnetic core 540. The planar magnetic core 540 may be divided into a plurality of pieces (at least two pieces) in a direction parallel to the direction of the magnetic lines of the coil (perpendicular to B-B) to reduce eddy currents in the planar magnetic core 540.

As shown in fig. 6, the interposer 600(300) includes a substrate 601(301), a first surface 610(310), and a second surface 620 (320). The first metal line 611(311) extends from the first surface 610 to the inside of the substrate 601, and is electrically connected to the second metal line 621(321) outside the second surface 620 through the second via 632 (332). The first metal line 611, the second metal line 621, and the second via 632 may be insulated from the substrate 601 by an insulating layer 633 (433). More than one metal layer 615(415) may be formed on the first surface 610, and an insulating layer 613(413) is formed between the metal layers 615. Bumps 614(414) and solder balls 623(423) may be formed outside the first surface 610 and the second surface 620, respectively, for connection of the interposer and other devices. The planar magnetic core 640(540) is located between the second surface 620 and the second metal line 621, and the insulation between the planar magnetic core 640(540) and the substrate 601 and the second metal line 621 can be realized through the insulating or passivation layer 622 (422).

Example 3 an embedded magnetic core is embedded in an interposer.

Example 3 adds an embedded magnetic core in the second surface on the basis of example 1.

As shown in fig. 7, the interposer 700(300) includes a substrate 701(301), a first surface 710(310), a second surface 720(320), a first metal line 711(311) embedded in the first surface 710, a second metal line 721(321) formed outside the second surface, a first via 731(331) and a second via 732(332) for electrical connection.

An embedded magnetic core 740 is disposed in the second surface 720, the embedded magnetic core 740 extends from the second surface 740 into the substrate 701, and an insulating layer may be disposed between the embedded magnetic core 740 and the substrate 701. The embedded core 740 is formed by deposition such as sputtering, evaporation or plating and patterning or planarization after etching to form a trench. The embedded magnetic core 740 is formed of a material layer having a high magnetic permeability, such as an alloy, oxide or composite of nickel Ni, iron Fe, cobalt Co and manganese Mn magnetic elements, or a lamination of a high magnetic permeability material layer and an insulating layer. The first metal wire 711, the second via 732, and the second metal wire 721 form a coil of an integrated inductor, and the coil surrounds the embedded magnetic core 740. The embedded magnetic core 740 is divided into 4 pieces in a direction perpendicular to the length direction of the first metal wire 711 to reduce eddy current in the magnetic core. The number of the divided magnetic cores can be adjusted to be more than 1 according to requirements.

As shown in fig. 8, the interposer 800(300) includes a substrate 801(301), a first surface 810(310), and a second surface 820 (320). The first metal line 811(311) extends from the first surface to the inside of the substrate, and is electrically connected to the second metal line 821(321) outside the second surface through the second via 832 (432). The first metal line 811, the second metal line 821, and the second via 832 may be insulated from the substrate 801 by an insulating layer 833 (433). More than one metal layer 815(415) may be formed on the first surface 810, and an insulating layer 813(413) may be formed between the metal layers 815. Bumps 814 and solder balls 823 may be formed outside the first surface 810 and the second surface 820, respectively, for connection of the interposer and other devices. Embedded magnetic core 840(740) is located within second surface 820, extending from second surface 820 into the interior of substrate 801, and insulation between embedded magnetic core 840 and substrate 801 may be achieved with insulating layer 841. Insulation between the second metal line 821 and the substrate 801 may be achieved using an insulating or passivation layer 822 (422). Embedded core 841(740) is divided into 4 pieces along the length direction perpendicular to first metal wire 811(711) to reduce eddy current in the core.

Examples 2 to 3 describe that a magnetic core is provided in an inductor using an embedded metal wire. Other magnetic devices, such as coupling inductors and transformers, may also be provided on the adapter plate by different coil arrangements. The core, bump, solder ball structures are not shown in examples 4-7 for clarity of showing the arrangement of the magnetic device coils. In practical use, the magnetic core, bump, solder ball structure may be provided according to the structures of embodiments 1 to 3.

Embodiment 4, along direction D in fig. 3, which is a top view direction of the interposer 900(300) including the magnetic device, as shown in fig. 9, the interposer 900(300) includes a first set of coils composed of three first metal lines (embedded metal lines) 911(311) adjacent to the top of the figure, two second metal lines 921(321) adjacent to the top of the figure and located outside the second surface, and second through holes 932(332) connecting the first metal lines and the second metal lines. The interposer 900 further comprises a second set of coils consisting of three first metal lines (embedded metal lines) 940(311) immediately below the diagram, two second metal lines 950(321) immediately below the diagram and located outside the second surface, and second vias 960(332) connecting the first metal lines and the second metal lines. There is magnetic coupling between the first set of coils and the second set of coils.

Embodiment 5, along direction D in fig. 3, which is a top view direction of the interposer 1000(300) including the magnetic device, as shown in fig. 10, the interposer 1000(300) includes a first set of coils composed of three first metal lines (embedded metal lines) 1011(311) spaced by a single bar, two second metal lines 1021(321) spaced by a single bar and located outside a second surface, and second through holes 1032(332) connecting the first metal lines and the second metal lines. The interposer 1000 further comprises a second set of coils consisting of three other first metal lines (embedded metal lines) 1040(311) of the spacer strip, two other second metal lines 1050(321) of the spacer strip located outside the second surface, and second through holes 1060(332) connecting the first metal lines and the second metal lines. The metal wires of the second set of coils are alternately arranged with the first metal wires and the second metal wires of the first set of coils to form an intertwined structure, and magnetic coupling exists.

Examples 4 and 5 show the case where two sets of coils are coupled to each other, and in actual use, two or more sets of coils coupled to each other may be included as necessary.

Embodiment 6 is a top view of the interposer 1100(300) including the magnetic device along direction D in fig. 3. As shown in fig. 11, the interposer 1100(300) includes a magnetic core 1111 having a closed magnetic circuit.

Embodiment 7 is a top view of the interposer 1200(300) including the magnetic device along direction D in fig. 3. As shown in fig. 12, the interposer 1200(300) includes a core 1221(1311) having a gap 1222, and the inductance and saturation current parameters of the magnetic device can be adjusted by adjusting the size of the gap.

The interposer of embodiments 1-7 may include other active devices, passive devices, or a combination of active and passive devices, such as an integrated circuit, in the semiconductor substrate in areas where the first surface or the second surface is not occupied by magnetic devices.

Industrial applicability

Compared with the prior art, the inductors formed by connecting the front side metal wire and the back side metal wire of the substrate through the silicon through hole utilize the metal wire on the surface of the substrate, the comparison document 1 does not have space in the substrate to form the embedded metal wire, the metal wires on the front sides of the comparison documents 2 and 3 are not embedded in the grooves on the front side of the substrate, and the comparison document 4 is not embedded in the grooves on the front side of the substrate. According to the invention, a part of metal conductors of the magnetic device are embedded in the substrate, so that the resistance of the inductor is obviously reduced, the inductor density and the quality factor of the integrated magnetic device are improved, and the effects of reducing the volume and improving the efficiency are achieved. A part of metal conductors of the magnetic device are embedded in the substrate, so that the flatness of the surface of the adapter plate is not influenced, the existing metal interconnection line is not occupied, and the integration of the high-performance magnetic device is realized on the premise of ensuring that the interconnection function of the silicon adapter plate is not damaged. Therefore, the integrated magnetic device with high inductance density and quality factor is integrated in the adapter plate under the condition of not losing the advantages of small thickness, small interconnection line width and high interconnection density of the adapter plate.

Claims

1. The utility model provides an adapter plate with integrated magnetic device, is equipped with magnetic device on the substrate, and magnetic device's coil is connected by the metal wire and constitutes, the metal wire is first metal wire and second metal wire, and first metal wire and second metal wire are connected by the second through-hole electricity that wherein packs metal and constitute the coil, the coil is the spiral line form, its characterized in that: the substrate is made of silicon, a first metal wire is arranged in the substrate and embedded in a groove arranged below a first surface on the substrate, an insulating layer is arranged on the surface of the groove in the substrate, the upper portion of the first metal wire and the first surface are flattened, a second metal wire is arranged outside a second surface below the substrate, a first through hole which is electrically connected with the second metal wire and the first surface and filled with metal is arranged in the substrate, the thickness of the first metal wire is larger than that of the second metal wire, more than one metal interconnection layer of the metal wire is formed on the first surface, the distance and the line width of the second metal wire are larger than those of the metal interconnection layers on the first surface, the thickness of the adapter plate is 100 micrometers, and the thickness of the first metal wire is 50 micrometers.

2. The interposer with integrated magnetic device as recited in claim 1, wherein: the first metal wire, the second metal wire and the second through hole filled with metal form a coil group, and one group of coils is magnetically coupled with the other group of coils; the first metal wires of one group of coils are adjacent, the second metal wires of one group of coils are adjacent, the first metal wires of the other group of coils are adjacent, and the second metal wires of the other group of coils are adjacent; or one group of coils is separated from the first metal wire strips of the other group of coils, and one group of coils is separated from the second metal wire strips of the other group of coils to form an interlaced structure.

3. The interposer with integrated magnetic device as recited in claim 2, wherein: a planar magnetic core is arranged outside the substrate and between the second surface and the second metal wire, and a magnetic circuit of the magnetic core is closed or has a gap.

4. The interposer with integrated magnetic device as recited in claim 3, wherein: the second surface is internally provided with a groove, the groove is filled with an embedded magnetic core, the embedded magnetic core extends into the substrate from the second surface and is flattened on the second surface, and a magnetic circuit of the magnetic core is closed or has a gap.