CN108365303B

CN108365303B - Single-polarization temperature control terahertz switch

Info

Publication number: CN108365303B
Application number: CN201810064731.0A
Authority: CN
Inventors: 李九生; 马宏宇
Original assignee: China Jiliang University
Current assignee: China Jiliang University
Priority date: 2018-01-23
Filing date: 2018-01-23
Publication date: 2020-08-07
Anticipated expiration: 2038-01-23
Also published as: CN108365303A

Abstract

The invention discloses a single-polarization temperature control terahertz switch. The device comprises a signal input end, a signal output end, an input waveguide, an output waveguide and an intermediate waveguide; the middle waveguide is formed by sequentially and crossly arranging the same number of vanadium dioxide slices and silicon slices; when terahertz waves are input from the input waveguide, the effective dielectric constant of the vanadium dioxide is changed by adjusting the temperature, so that the resonance frequency of the switch can be adjusted in temperature, and the temperature control function of the terahertz wave switch is realized. The terahertz wave sensor has the characteristics of simple and compact structure, easiness in implementation and the like, and has great application value in the aspects of terahertz communication systems, sensing and imaging.

Description

Single-polarization temperature control terahertz switch

Technical Field

The invention relates to a switch, in particular to a single-polarization temperature control terahertz switch.

Background

Terahertz waves are located between microwaves and far infrared light in an electromagnetic spectrum, are in the transition field from electronics to photonics, integrate the advantages of microwave communication and optical communication, and show certain special excellent properties such as large transmission capacity, good directivity, strong anti-interference capability, low photon energy and the like compared with the two existing communication means. The terahertz switch is one of important functional devices of terahertz communication and imaging systems, and deep research on the terahertz switch has profound significance for wide application of terahertz technology.

Vanadium dioxide has important application in terahertz functional devices. Among the vanadium suboxides, vanadium dioxide has attracted much attention because of its large phase transition range and its phase transition temperature closest to room temperature. At the critical temperature of 340K (68 ℃), vanadium dioxide generates semiconductor-metal phase transition, the semiconductor state at the temperature lower than 68 ℃ is converted into the metal state at the temperature higher than 68 ℃, and reversible mutation can also occur in the physical properties of the vanadium dioxide along with the phase change. Thus, the properties of vanadium dioxide can be actively controlled by temperature. According to the terahertz wave switch, the terahertz wave switch is manufactured by using vanadium dioxide, the temperature control characteristic of the dielectric constant of the vanadium dioxide is utilized, the relative dielectric constant value of the vanadium dioxide is changed by changing the temperature, the translation phenomenon of the resonant frequency is realized, and the switch adjustable function is realized.

Disclosure of Invention

The invention aims to solve the problems in the prior art and provides a single-polarization temperature control terahertz switch which is a novel ultra-compact high-performance terahertz switch and can be placed on a chip to be used for a terahertz communication system, a sensing system and the like.

In order to achieve the purpose, the technical scheme of the invention is as follows:

the single-polarization temperature control terahertz switch comprises a signal input end, a signal output end, an input waveguide, an output waveguide, a middle waveguide, a vanadium dioxide sheet and a silicon sheet, wherein the right side of the input waveguide is provided with the middle waveguide, the middle waveguide is formed by sequentially and closely arranging the same number of vanadium dioxide sheets and silicon sheets in a crossed manner, the right side of the middle waveguide is provided with the output waveguide, the left end of the input waveguide is provided with the signal input end, the right end of the output waveguide is provided with the signal output end, terahertz polarization signals are input from the signal input end and output from the signal output end, and the whole structure comprising the signal input end, the signal output end, the input waveguide, the output waveguide and the middle waveguide is arranged on. When terahertz waves are input from the input waveguide, the effective dielectric constant of the vanadium dioxide is changed by adjusting the temperature, so that the resonance frequency of the switch can be adjusted in temperature, and the temperature control function of the terahertz wave switch is realized.

Based on the above scheme, the following preferable modes can be further adopted:

the input waveguide is made of silicon material, the length of the input waveguide is 1mm, the width of the input waveguide is 400 micrometers, and the height of the input waveguide is 220 micrometers. The output waveguide is made of silicon material, the length of the output waveguide is 1mm, the width of the output waveguide is 400 micrometers, and the height of the output waveguide is 220 micrometers. The shape and size of the vanadium dioxide slice and the silicon slice in the middle waveguide are the same. The length of the vanadium dioxide thin sheet and the silicon thin sheet is 5 micrometers, the width of the vanadium dioxide thin sheet and the silicon thin sheet are 400 micrometers, the height of the vanadium dioxide thin sheet and the silicon thin sheet is 220 micrometers, and the number of the vanadium dioxide thin sheet and the silicon thin sheet is 20.

In the present invention, the length direction is defined as the direction from left to right in fig. 2; the width direction is a direction perpendicular to the length direction on a plane, i.e., a direction perpendicular to the paper surface in fig. 2; the height direction is from the bottom up in fig. 2.

According to the terahertz wave switch, the terahertz wave switch is manufactured by using vanadium dioxide, the temperature control characteristic of the dielectric constant of the vanadium dioxide is utilized, the relative dielectric constant value of the vanadium dioxide is changed by changing the temperature, the translation phenomenon of the resonant frequency is realized, and the switch adjustable function is realized. The terahertz wave sensor has the characteristics of simple and compact structure, easiness in implementation and the like, and has great application value in the aspects of terahertz communication systems, sensing and imaging.

Description of the drawings:

FIG. 1 is a schematic diagram of a three-dimensional structure of a single-polarization temperature-control terahertz switch;

FIG. 2 is a side view of a single-polarization temperature-controlled terahertz switch;

FIG. 3 is a schematic diagram of an "on" state of a single-polarization temperature-controlled terahertz switch;

FIG. 4 is a schematic diagram of an "off" state of a single polarization temperature-controlled terahertz switch;

FIG. 5 is a TM polarization transmittance curve diagram of a single polarization temperature control terahertz switch;

FIG. 6 is a TE polarization transmittance curve diagram of a single polarization temperature-control terahertz switch;

Detailed Description

As shown in fig. 1-2, a single-polarization temperature-control terahertz switch includes a signal input end 1, a signal output end 2, an input waveguide 3, an output waveguide 4, a middle waveguide 5, a vanadium dioxide sheet 6, and a silicon sheet 7, where the right side of the input waveguide 3 is the middle waveguide 5, the middle waveguide 5 is formed by sequentially and closely arranging the vanadium dioxide sheet 6 and the silicon sheet 7 with the same shape, size, and number, the right side of the middle waveguide 5 is the output waveguide 4, the left end of the input waveguide 3 is provided with the signal input end 1, the right end of the output waveguide 4 is provided with the signal output end 2, and terahertz polarization signals are input from the signal input end 1 and output from the signal output end 2. The entire structure including the signal input terminal 1, the signal output terminal 2, the input waveguide 3, the output waveguide 4, and the intermediate waveguide 5 is placed on a glass substrate. When terahertz waves are input from the input waveguide, the effective dielectric constant of the vanadium dioxide is changed by adjusting the temperature, so that the resonance frequency of the switch can be adjusted in temperature, and the temperature control function of the terahertz wave switch is realized.

Example 1

In the embodiment, the shapes of all parts of the single-polarization temperature control terahertz switch are as described above (fig. 1-2), so that details are not repeated, specific parameters of all parts are as follows, an input waveguide material is a silicon material, the length is 1mm, the width is 400 μm, the height is 220 μm, an output waveguide material is a silicon material, the length is 1mm, the width is 400 μm, the height is 220 μm, an intermediate waveguide is formed by sequentially and closely arranging 20 vanadium dioxide sheets and 20 silicon sheets, the shapes and the sizes of the two sheets are the same, the length is 5 μm, the width is 400 μm, and the height is 220 μm, performance indexes of the single-polarization temperature control terahertz switch are tested by adopting COMSO L Multiphy software, fig. 3 and fig. 4 are schematic diagrams of an 'on' state and an 'off' state under the temperature of 220K of the temperature control terahertz switch respectively, it can be known from the figures that after the input terahertz wave, the structure can realize on-off control of the terahertz wave, fig. 5 is a schematic diagram of the polarization transmittance of the terahertz switch at the TM mode, the TM mode can not pass through the structure, so that the TE-40 terahertz wave transmittance can be adjusted from the TE-frequency point, the terahertz wave can be realized by adjusting terahertz wave, the TE-220 dB can be realized by the terahertz wave.

Claims

1. The single-polarization temperature control terahertz switch is characterized by comprising a signal input end (1), a signal output end (2), an input waveguide (3), an output waveguide (4), a middle waveguide (5), a vanadium dioxide sheet (6) and a silicon sheet (7), wherein the middle waveguide (5) is arranged on the right side of the input waveguide (3), the middle waveguide (5) is formed by sequentially crossing and closely arranging the same number of vanadium dioxide sheets (6) and silicon sheets (7), the output waveguide (4) is arranged on the right side of the middle waveguide (5), the signal input end (1) is arranged at the left end of the input waveguide (3), the signal output end (2) is arranged at the right end of the output waveguide (4), terahertz polarization signals are input from the signal input end (1) and output from the signal output end (2), and the terahertz polarization signals comprise the signal input end (1), the signal output end (2), the input waveguide (3) and the signal output, The whole structure of the output waveguide (4) and the intermediate waveguide (5) is placed on a glass substrate; the input waveguide (3) is made of silicon material, the length is 1mm, the width is 400 mu m, and the height is 220 mu m; the output waveguide (4) is made of silicon material, the length is 1mm, the width is 400 mu m, and the height is 220 mu m; the vanadium dioxide slice (6) and the silicon slice (7) in the middle waveguide (5) have the same shape and size; the vanadium dioxide thin slices (6) and the silicon thin slices (7) have the length of 5 micrometers, the width of 400 micrometers, the height of 220 micrometers and the number of 20; when terahertz waves are input from the input waveguide, the effective dielectric constant of the vanadium dioxide is changed by adjusting the temperature, so that the resonance frequency of the switch can be adjusted in temperature, and the temperature control function of the terahertz wave switch is realized.