CN108365111A - Stable white light electroluminescent device of organic thin film and preparation method thereof with bipolarity mixed interval layer - Google Patents
Stable white light electroluminescent device of organic thin film and preparation method thereof with bipolarity mixed interval layer Download PDFInfo
- Publication number
- CN108365111A CN108365111A CN201810013889.5A CN201810013889A CN108365111A CN 108365111 A CN108365111 A CN 108365111A CN 201810013889 A CN201810013889 A CN 201810013889A CN 108365111 A CN108365111 A CN 108365111A
- Authority
- CN
- China
- Prior art keywords
- layer
- light
- bipolarity
- ultra
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a kind of stable white light electroluminescent device of organic thin film of bipolarity mixed interval layer and preparation method thereof, including substrate, anode, hole injection layer, hole transmission layer, orange light ultra-thin light-emitting layer, bipolarity mixed interval layer, green light ultra-thin light-emitting layer, bipolarity mixed interval layer, blue light ultra-thin light-emitting layer, electron transfer layer, electron injecting layer and the cathode stacked gradually.The present invention avoids the problem of doping concentration is difficult to control and repeats, simplifies technological process, save material, to reduce cost without using doping luminescence system.The luminescent material of different colours is prepared into the different zones of same bipolar mixed interval layer by the present invention, solves the problems, such as that the driving voltage that multi-luminescent layer structure is brought increases.Effective structure of energy transmission system and control, finally obtain multispectral section of white light electroluminescent device of organic thin film of spectrum-stable in device of the present invention.
Description
Technical field
The present invention relates to a kind of electroluminescent devices and preparation method thereof, more particularly to a kind of white-light electroluminescence device
And preparation method thereof, it is applied to membrane electro luminescent device technical field.
Background technology
White organic LED, i.e. organic light-emitting diode, OLED, it is light-weight with its, clever
It the advantages that active strong, high resolution, wide visual angle, has broad prospects in terms of solid-state lighting and full-color EL display.Currently, several
All monochromes and white light phosphorescence Organic Light Emitting Diode are prepared by way of total steaming.Doping, which helps to reduce, quenches
It goes out, to obtain high efficiency and low efficiency roll-off.But some obstacles also are brought to commercialization, for example how to control luminescent layer
The evaporation rate of material of main part and guest materials needs to find a kind of high level to precisely control doping concentration
Bipolar host material is so as to effectively confinement exciton.This makes the preparation process of device more complicated, and manufacturing cost also improves
It is very much, it is unfavorable for industry manufacture and extensive use.
Invention content
In order to solve prior art problem, it is an object of the present invention to overcome the deficiencies of the prior art, and to provide one kind
Stable white light electroluminescent device of organic thin film and preparation method thereof with bipolarity mixed interval layer is related to a kind of preparing work
The stable white light electroluminescent device of organic thin film that skill is relatively simple, need not adulterate.The present invention prepares white without using doping
Light Organic Light Emitting Diode saves material, simplifies manufacture craft, reduces cost, spectrum-stable, and can obtain and preferably repeat
Property.
In order to achieve the above objectives, the present invention adopts the following technical scheme that：
A kind of stable white light electroluminescent device of organic thin film with bipolarity mixed interval layer, including stack gradually
Substrate, anode, hole injection layer, hole transmission layer, orange light ultra-thin light-emitting layer, the bipolarity mixed interval layer of front side, green light are super
Thin luminescent layer, the bipolarity mixed interval layer of rear side, blue light ultra-thin light-emitting layer, electron transfer layer, electron injecting layer and cathode；Its
Hole-transporting layer also serves as electronic barrier layer；Orange light ultra-thin light-emitting layer, bipolarity mixed interval layer, the green light of front side are ultra-thin
Luminescent layer, the bipolarity mixed interval layer of rear side and blue light ultra-thin light-emitting layer, which are formed, is layered discontinuous light-emitting film structure, group
At MULTILAYER COMPOSITE light emitting functional layer, light emitting functional layer prepared by the luminescent material of different colours is set to bipolarity mixed interval
In the different zones that layer is separated to form, the luminous single luminous layer structure in subregion, orange light ultra-thin light-emitting layer, the ultra-thin hair of green light are formed
The thickness of photosphere or blue light ultra-thin light-emitting layer is 0.05~1nm.
As currently preferred technical solution, the material of the bipolarity mixed interval layer is mass ratio 1:5~5:1
The mixture of the material of electron transfer layer and the material of hole transmission layer, the thickness of the bipolarity mixed interval layer is 2~
8nm。
It is preferred that the thickness of above-mentioned bipolarity mixed interval layer is 3~5nm.
The above-mentioned single luminous layer structure to be shone using subregion, and can be preferably by adjusting in MULTILAYER COMPOSITE luminescent layer not
The thickness of the distance between light emitting functional layer prepared with the luminescent material of color, luminescent material, to change the hair of different colours
The weak ratio of light intensity forms multispectral section of white light electroluminescent device of organic thin film.
It is preferably disposed on the bipolarity mixed interval layer of the front side between orange light ultra-thin light-emitting layer and green light ultra-thin light-emitting layer
Thickness, more than the bipolarity mixed interval layer for the rear side being set between green light ultra-thin light-emitting layer and blue light ultra-thin light-emitting layer
Thickness.
It is preferred that orange light ultra-thin light-emitting layer, green light ultra-thin light-emitting layer or blue light ultra-thin light-emitting layer are the endless Total continuity of overall structure
Film.
As currently preferred technical solution, the thickness of anode is 80~200nm；The thickness of hole injection layer be 40~
70nm；The thickness of hole transmission layer is 10~40nm；The thickness of orange light ultra-thin light-emitting layer is 0.1~1nm；Green light ultra-thin light-emitting layer
Thickness be 0.05~0.2nm；The thickness of blue light ultra-thin light-emitting layer is 0.05~0.2nm；The thickness of electron transfer layer be 20~
50nm；The thickness of electron injecting layer is 0.5~5nm；The thickness of cathode is 80~200nm.
It is preferred that the thickness of hole transmission layer is 25~27nm.
As currently preferred technical solution, substrate uses transparent glass；Alternatively, the use indium tin oxide of anode,
Any one material and arbitrary several mixing materials are made in the tin oxide of fluorine doped, the zinc oxide for mixing aluminium and indium-doped zinc oxide；
Alternatively, it is 1 that hole injection layer material, which is mass ratio,：1~1：2 MoO3With the mixture of TCTA；Alternatively, hole transmission layer uses
Any one material and arbitrary several mixing materials are made in TCTA, MCP and CBP；Alternatively, orange light ultra-thin light-emitting layer uses PO-
01, any one material and arbitrary several mixing materials are made in PO-01-TB and Ir (bt) 2 (acac)；Alternatively, green light is ultra-thin
Luminescent layer uses any one material or two kinds of materials in Ir (ppy) 3 and Ir (ppy) 2 (acac) to be made；Alternatively, blue light is ultra-thin
Luminescent layer uses any one material or two kinds of materials in FIrpic and BCzVBi to be made；Alternatively, electron transfer layer using TPBi,
Any one material and arbitrary several mixing materials are made in Bphen, TmPyPB and Tm3PyPB；Alternatively, electron injecting layer uses
Any one material and arbitrary several mixing in lithium fluoride, lithium carbonate, cesium carbonate, nitridation caesium, cesium chloride (CsCl) and cesium fluoride
Material is made；Alternatively, cathode is made of any one material in aluminium, silver, magnesium, barium and calcium and arbitrary several mixing materials.
As currently preferred technical solution, hole injection layer material is that mass ratio is 2：3 MoO3With mixing for TCTA
Close object；Alternatively, it is 1 that the material of bipolarity mixed interval layer, which is mass ratio,：The mixture of 3.5 Tm3PyPB and TCTA.
A kind of preparation side of stable white light electroluminescent device of organic thin film of the present invention with bipolarity mixed interval layer
Method includes the following steps：
A. substrate is cleaned, obtains the substrate of clean dried；It is preferred that using detergent, acetone, ethyl alcohol successively to substrate
It is respectively ultrasonically treated 15min with isopropanol, then carries out the operation that UV-ozone makees 15min processing；
B. anode is prepared in the substrate by the step a treated clean drieds；The forming method of anode is preferred
Vapor deposition, spraying plating, sputtering, electrochemistry hydatogenesis or electrochemical means etc., and particularly preferably sputtering method；
C. on the anode prepared in the step b, by vacuum vapour deposition, it is sequentially prepared hole injection layer, hole passes
Defeated layer, orange light ultra-thin light-emitting layer, bipolarity mixed interval layer, green light ultra-thin light-emitting layer, bipolarity mixed interval layer, blue light are ultra-thin
Luminescent layer, electron transfer layer, electron injecting layer and cathode obtain multispectral section of white light electroluminescent device of organic thin film.It is preferred that
Hole injection layer material is that mass ratio is 2：3 MoO3With the mixture of TCTA.
The present invention compared with prior art, has following obvious prominent substantive distinguishing features and remarkable advantage：
1. the present invention has the stable white light electroluminescent device of organic thin film of bipolarity mixed interval layer, use
The luminous layer process of 0.05nm~1nm, forms discontinuous film；Electronics injected by cathode after by electron injecting layer, electricity
Blue light ultra-thin light-emitting layer is reached after sub- transport layer；Hole is injected by anode, after hole injection layer, hole transmission layer, is passed through
Orange light ultra-thin light-emitting layer reaches bipolarity mixed interval layer, and then hole passes through the ultra-thin hair of green light via bipolarity mixed interval layer
Photosphere reaches blue light ultra-thin light-emitting layer and electronically forms exciton blue light-emitting, and exciton can pass through energy transmission (ET, Energy
Transfer mode), which reaches green light ultra-thin light-emitting layer and orange light ultra-thin light-emitting layer, makes it send out green light and orange light, to
Obtain stable white light；
2. preparation method of the present invention uses the electroluminescent hair of stable white light organic film of bipolarity mixed interval layer to undope
The luminescent spectrum of the preparation method of optical device, the electroluminescent device of organic thin film of preparation is uniform, the list to be shone using subregion
Luminous layer structure, can by adjusting the thickness in the distance between different luminescent material regions and luminescent material, control exciton it
Between energy transmission enhancing or inhibition, to change the luminous strong and weak ratio of different colours, due to energy transmission in device
Effective structure of system and control, can obtain multispectral section of white light electroluminescent device of organic thin film of spectrum-stable；
3. preparation method of the present invention is simple for process, operation facility, easily controllable, it is suitable for being based on bipolarity mixed interval layer
Four wave band stable white light electroluminescent device of organic thin film preparation, have extensive promotional value.
Description of the drawings
Fig. 1 is that the embodiment of the present invention one prepares the stable white light organic thin film electroluminescent with bipolarity mixed interval layer
The structural schematic diagram of device.
Fig. 2 is that the embodiment of the present invention one prepares the stable white light organic thin film electroluminescent with bipolarity mixed interval layer
The flow chart of the preparation method of device.
Fig. 3 is that the stable white light obtained with bipolarity mixed interval layer of one~embodiment of the embodiment of the present invention three is organic
The current efficiency comparison diagram of membrane electro luminescent device.
Fig. 4 is that the embodiment of the present invention one prepares the stable white light organic thin film electroluminescent with bipolarity mixed interval layer
The luminescent spectrum figure of device.
Fig. 5 is that the embodiment of the present invention two prepares the stable white light organic thin film electroluminescent with bipolarity mixed interval layer
The luminescent spectrum figure of device.
Fig. 6 is that the embodiment of the present invention three prepares the stable white light organic thin film electroluminescent with bipolarity mixed interval layer
The luminescent spectrum figure of device.
Specific implementation mode
Said program is described further below in conjunction with specific examples of the implementation, the preferred embodiment of the present invention is described in detail such as
Under：
Embodiment one：
In the present embodiment, referring to Fig. 1 and Fig. 2, a kind of stable white light organic film with bipolarity mixed interval layer
Electroluminescent device, including stack gradually substrate 10, anode 20, hole injection layer 30, hole transmission layer 40, the ultra-thin hair of orange light
Photosphere 50, the bipolarity mixed interval layer 60 of front side, green light ultra-thin light-emitting layer 70, the bipolarity mixed interval layer 60 of rear side, indigo plant
Light ultra-thin light-emitting layer 80, electron transfer layer 90, electron injecting layer 100 and cathode 110；Its hole-transporting layer 40 also serves as electricity
Sub- barrier layer；Pair of orange light ultra-thin light-emitting layer 50, the bipolarity mixed interval layer 60 of front side, green light ultra-thin light-emitting layer 70, rear side
Polarity mixed interval layer 60 and blue light ultra-thin light-emitting layer 80, which are formed, is layered discontinuous light-emitting film structure, composition MULTILAYER COMPOSITE hair
Light emitting functional layer prepared by the luminescent material of different colours is set to bipolarity mixed interval layer 60 and is separated to form by light functional layer
Different zones in, form the luminous single luminous layer structure in subregion, orange light ultra-thin light-emitting layer 50, green light ultra-thin light-emitting layer 70 or
The thickness of blue light ultra-thin light-emitting layer 80 is 0.05~1nm.
In the present embodiment, referring to Fig. 1 and Fig. 2, a kind of the present embodiment has the stable white light of bipolarity mixed interval layer
The preparation method of electroluminescent device of organic thin film, includes the following steps：
S1：Substrate 10 is provided, and substrate 10 is cleaned, substrate 10 selects transparent glass, is cleaned to substrate 10
Operation be：15min is respectively ultrasonically treated with detergent, acetone, ethyl alcohol and isopropanol successively to substrate 10, arrives the base of clean dried
Bottom；10 transmitance of substrate is high, can guarantee the light extraction efficiency of the present embodiment electroluminescent device of organic thin film；
S2：The ITO that sputtering a layer thickness is 150nm on by the step S1 substrates that treated cleans up 10
Conductive film, then UV-ozone is carried out to ITO conductive films and makees 15min processing, form anode 20；
S3：It is 10 to have the glass substrate for the ITO conductive films that a layer thickness is 150nm to be transferred to pressure sputtering-4Under Pa
In high vacuum cavity, on the anode 20 that then prepares in the step S2, by vacuum vapour deposition, it is sequentially depositing to form hole
Implanted layer 30, hole transmission layer 40, orange light ultra-thin light-emitting layer 50, front side bipolarity mixed interval layer 60, green light ultra-thin light-emitting
Layer 70, the bipolarity mixed interval layer 60 of rear side, blue light ultra-thin light-emitting layer 80, electron transfer layer 90, electron injecting layer 100 and
Cathode 110 obtains multispectral section of white light electroluminescent device of organic thin film.Wherein vacuum evaporation deposition thickness is the mass ratio of 50nm
It is 2：3 MoO3Mixture material layer with TCTA is as hole injection layer 30；Vacuum evaporation deposition thickness is the TCTA of 27nm
Material layer is as hole transmission layer 40, and also serve as electronic barrier layer；Vacuum evaporation deposition thickness is the PO-01 materials of 0.4nm
Layer is used as orange light ultra-thin light-emitting layer 50, and orange light ultra-thin light-emitting layer 50 is made to be the incomplete continuous film of overall structure so that hole
Orange light ultra-thin light-emitting layer 50 is may pass through, without the hole transmission layer in orange light ultra-thin light-emitting layer 50 and the electronic barrier layer that also serves as
40 interfaces excessively accumulate；The mass ratio that vacuum evaporation deposition thickness is 3nm is 1：The mixture material of 3.5 Tm3PyPB and TCTA
Bipolarity mixed interval layer 60 of the bed of material as front side；Vacuum evaporation deposition thickness is the Ir (ppy) of 0.15nm2(acac) material
Layer is used as green light ultra-thin light-emitting layer 70 so that green light ultra-thin light-emitting layer 70 is the incomplete continuous film of overall structure so that hole
Green light ultra-thin light-emitting layer 70 is may pass through, without excessively being accumulated in green light ultra-thin light-emitting layer 70 and 60 interface of bipolarity mixed interval layer
It is tired；The mass ratio that vacuum evaporation deposition thickness is 3nm is 1：The mixture material layer of 3.5 Tm3PyPB and TCTA are used as rear side
Bipolarity mixed interval layer 60；Vacuum evaporation deposition thickness is the FIrpic material layers of 0.1nm as blue light ultra-thin light-emitting layer
80；Vacuum evaporation deposition thickness is the Tm3PyPB material layers of 40nm as electron transfer layer 90；Vacuum evaporation deposition thickness is
The LiF material layers of 1nm are as electron injecting layer 100；The Al layers that vacuum evaporation deposition thickness is 100nm are used as cathode 110.This reality
The electroluminescent device of organic thin film for applying example preparation includes bipolarity mixed interval layer, can realize outgoing stable white light.This implementation
Example is using the preparation method for the stable white light electroluminescent device of organic thin film of bipolarity mixed interval layer to undope, technique letter
Single, operation facility can be adapted for the four wave band stable white light organic thin film electroluminescent devices based on bipolarity mixed interval layer
The preparation of part.
The present embodiment stable white light electroluminescent device of organic thin film does not use the doping illuminator of Donor-Acceptor
System avoids the problem of being difficult to control doping concentration with repeating in the doping system of Donor-Acceptor, simplifies
Technological process saves material, to reduce cost.It is mixed by the way that the luminescent material of different colours is prepared into same bipolar
In the different zones for closing wall, on the one hand solve the problems, such as that the driving voltage that multi-luminescent layer structure is brought increases；Another party
Face different colours are separated from each other the generation that can avoid phase separation；By the way that the distance between different colours, thickness etc. is arranged because usually
The luminous strong and weak ratio for adjusting different colours, realizes the white light electroluminescent device of organic thin film of multiwave spectrum-stable.
Embodiment two：
The present embodiment and embodiment one are essentially identical, are particular in that：
In the present embodiment, a kind of stable white light electroluminescent device of organic thin film with bipolarity mixed interval layer
Preparation method includes the following steps：
S1：This step is identical as embodiment one；
S2：This step is identical as embodiment one；
S3：It is 10 to have the glass substrate for the ITO conductive films that a layer thickness is 150nm to be transferred to pressure sputtering-4Under Pa
In high vacuum cavity, on the anode 20 that then prepares in the step S2, by vacuum vapour deposition, it is sequentially depositing to form hole
Implanted layer 30, hole transmission layer 40, orange light ultra-thin light-emitting layer 50, front side bipolarity mixed interval layer 60, green light ultra-thin light-emitting
Layer 70, the bipolarity mixed interval layer 60 of rear side, blue light ultra-thin light-emitting layer 80, electron transfer layer 90, electron injecting layer 100 and
Cathode 110 obtains multispectral section of white light electroluminescent device of organic thin film.Wherein vacuum evaporation deposition thickness is the mass ratio of 50nm
It is 2：3 MoO3Mixture material layer with TCTA is as hole injection layer 30；Vacuum evaporation deposition thickness is the TCTA of 26nm
Material layer is as hole transmission layer 40, and also serve as electronic barrier layer；Vacuum evaporation deposition thickness is the PO-01 materials of 0.4nm
Layer is used as orange light ultra-thin light-emitting layer 50, and orange light ultra-thin light-emitting layer 50 is made to be the incomplete continuous film of overall structure so that hole
Orange light ultra-thin light-emitting layer 50 is may pass through, without the hole transmission layer in orange light ultra-thin light-emitting layer 50 and the electronic barrier layer that also serves as
40 interfaces excessively accumulate；The mass ratio that vacuum evaporation deposition thickness is 4nm is 1：The mixture material of 3.5 Tm3PyPB and TCTA
Bipolarity mixed interval layer 60 of the bed of material as front side；Vacuum evaporation deposition thickness is Ir (ppy) 2 (acac) material of 0.15nm
Layer is used as green light ultra-thin light-emitting layer 70 so that green light ultra-thin light-emitting layer 70 is the incomplete continuous film of overall structure so that hole
Green light ultra-thin light-emitting layer 70 is may pass through, without excessively being accumulated in green light ultra-thin light-emitting layer 70 and 60 interface of bipolarity mixed interval layer
It is tired；The mass ratio that vacuum evaporation deposition thickness is 3nm is 1：The mixture material layer of 3.5 Tm3PyPB and TCTA are used as rear side
Bipolarity mixed interval layer 60；Vacuum evaporation deposition thickness is the FIrpic material layers of 0.1nm as blue light ultra-thin light-emitting layer
80；Vacuum evaporation deposition thickness is the Tm3PyPB material layers of 40nm as electron transfer layer 90；Vacuum evaporation deposition thickness is
The LiF material layers of 1nm are as electron injecting layer 100；The Al layers that vacuum evaporation deposition thickness is 100nm are used as cathode 110.This reality
The electroluminescent device of organic thin film for applying example preparation includes bipolarity mixed interval layer, can realize outgoing stable white light.This implementation
Example is using the preparation method for the stable white light electroluminescent device of organic thin film of bipolarity mixed interval layer to undope, technique letter
Single, operation facility can be adapted for the four wave band stable white light organic thin film electroluminescent devices based on bipolarity mixed interval layer
The preparation of part.
The bipolarity that the present embodiment is set to the front side between orange light ultra-thin light-emitting layer 50 and green light ultra-thin light-emitting layer 70 is mixed
The thickness of wall 60 is closed, it is bipolar more than the rear side being set between green light ultra-thin light-emitting layer 70 and blue light ultra-thin light-emitting layer 80
The thickness of property mixed interval layer 60.Bipolarity mixed interval layer between green light ultra-thin light-emitting layer 70 and orange light ultra-thin light-emitting layer 50
60 thickness relative to rear side bipolarity mixed interval layer 60 thickness increase, from green light ultra-thin light-emitting layer 70 to orange light surpass
The energy transmission of thin luminescent layer 50 is reduced therewith, and the luminescent spectrum of electroluminescent device of organic thin film manufactured in the present embodiment is compared
More uniformly, obtained white light is more preferable for embodiment one.
This stable white light electroluminescent device of organic thin film with bipolarity mixed interval layer of the present embodiment, uses
The luminescent layer of layering forms discontinuous film.Electronics injected by cathode after after electron injecting layer, electron transfer layer to
Up to blue light ultra-thin light-emitting layer；Hole is injected by anode, after hole injection layer, hole transmission layer, passes through orange light ultra-thin light-emitting
Layer reaches bipolarity mixed interval layer, and then hole passes through green light ultra-thin light-emitting layer to reach blue light via bipolarity mixed interval layer
Ultra-thin light-emitting layer and exciton blue light-emitting is electronically formed, and exciton can pass through energy transmission (ET, Energy Transfer)
Mode, which reaches green light ultra-thin light-emitting layer and orange light ultra-thin light-emitting layer, makes it send out green light and orange light, stable white to obtain
Light.
Embodiment three：
The present embodiment is substantially the same as in the previous example, and is particular in that：
In the present embodiment, a kind of stable white light electroluminescent device of organic thin film with bipolarity mixed interval layer
Preparation method includes the following steps：
S1：This step is identical as embodiment one；
S2：This step is identical as embodiment one；
S3：It is 10 to have the glass substrate for the ITO conductive films that a layer thickness is 150nm to be transferred to pressure sputtering-4Under Pa
In high vacuum cavity, on the anode 20 that then prepares in the step S2, by vacuum vapour deposition, it is sequentially depositing to form hole
Implanted layer 30, hole transmission layer 40, orange light ultra-thin light-emitting layer 50, front side bipolarity mixed interval layer 60, green light ultra-thin light-emitting
Layer 70, the bipolarity mixed interval layer 60 of rear side, blue light ultra-thin light-emitting layer 80, electron transfer layer 90, electron injecting layer 100 and
Cathode 110 obtains multispectral section of white light electroluminescent device of organic thin film.Wherein vacuum evaporation deposition thickness is the mass ratio of 50nm
It is 2：3 MoO3Mixture material layer with TCTA is as hole injection layer 30；Vacuum evaporation deposition thickness is the TCTA of 25nm
Material layer is as hole transmission layer 40, and also serve as electronic barrier layer；Vacuum evaporation deposition thickness is the PO-01 materials of 0.4nm
Layer is used as orange light ultra-thin light-emitting layer 50, and orange light ultra-thin light-emitting layer 50 is made to be the incomplete continuous film of overall structure so that hole
Orange light ultra-thin light-emitting layer 50 is may pass through, without the hole transmission layer in orange light ultra-thin light-emitting layer 50 and the electronic barrier layer that also serves as
40 interfaces excessively accumulate；The mass ratio that vacuum evaporation deposition thickness is 5nm is 1：The mixture material of 3.5 Tm3PyPB and TCTA
Bipolarity mixed interval layer 60 of the bed of material as front side；Vacuum evaporation deposition thickness is Ir (ppy) 2 (acac) material of 0.15nm
Layer is used as green light ultra-thin light-emitting layer 70 so that green light ultra-thin light-emitting layer 70 is the incomplete continuous film of overall structure so that hole
Green light ultra-thin light-emitting layer 70 is may pass through, without excessively being accumulated in green light ultra-thin light-emitting layer 70 and 60 interface of bipolarity mixed interval layer
It is tired；The mass ratio that vacuum evaporation deposition thickness is 3nm is 1：The mixture material layer of 3.5 Tm3PyPB and TCTA are used as rear side
Bipolarity mixed interval layer 60；Vacuum evaporation deposition thickness is the FIrpic material layers of 0.1nm as blue light ultra-thin light-emitting layer
80；Vacuum evaporation deposition thickness is the Tm3PyPB material layers of 40nm as electron transfer layer 90；Vacuum evaporation deposition thickness is
The LiF material layers of 1nm are as electron injecting layer 100；The Al layers that vacuum evaporation deposition thickness is 100nm are used as cathode 110.This reality
The electroluminescent device of organic thin film for applying example preparation includes bipolarity mixed interval layer, can realize outgoing stable white light.This implementation
Example is using the preparation method for the stable white light electroluminescent device of organic thin film of bipolarity mixed interval layer to undope, technique letter
Single, operation facility can be adapted for the four wave band stable white light organic thin film electroluminescent devices based on bipolarity mixed interval layer
The preparation of part.
The bipolarity that the present embodiment is set to the front side between orange light ultra-thin light-emitting layer 50 and green light ultra-thin light-emitting layer 70 is mixed
The thickness of wall 60 is closed, it is bipolar more than the rear side being set between green light ultra-thin light-emitting layer 70 and blue light ultra-thin light-emitting layer 80
The thickness of property mixed interval layer 60.Bipolarity mixed interval layer between green light ultra-thin light-emitting layer 70 and orange light ultra-thin light-emitting layer 50
60 thickness relative to rear side bipolarity mixed interval layer 60 thickness increase, from green light ultra-thin light-emitting layer 70 to orange light surpass
The energy transmission of thin luminescent layer 50 is reduced therewith, and the luminescent spectrum of electroluminescent device of organic thin film manufactured in the present embodiment is compared
More uniformly, obtained white light is more preferable for embodiment two.
This stable white light electroluminescent device of organic thin film with bipolarity mixed interval layer of the present embodiment, uses
The luminescent layer of layering forms discontinuous film.Electronics injected by cathode after after electron injecting layer, electron transfer layer to
Up to blue light ultra-thin light-emitting layer；Hole is injected by anode, after hole injection layer, hole transmission layer, passes through orange light ultra-thin light-emitting
Layer reaches bipolarity mixed interval layer, and then hole passes through green light ultra-thin light-emitting layer to reach blue light via bipolarity mixed interval layer
Ultra-thin light-emitting layer and exciton blue light-emitting is electronically formed, and exciton can pass through energy transmission (ET, Energy Transfer)
Mode, which reaches green light ultra-thin light-emitting layer and orange light ultra-thin light-emitting layer, makes it send out green light and orange light, stable white to obtain
Light.
Example IV：
The present embodiment is substantially the same as in the previous example, and is particular in that：
In the present embodiment, the stable white light electroluminescent device of organic thin film with bipolarity mixed interval layer uses
The luminous single luminous layer structure in subregion, and can be prepared by adjusting the luminescent material of the different colours in MULTILAYER COMPOSITE luminescent layer
The distance between light emitting functional layer, luminescent material thickness form multispectral section to change the luminous strong and weak ratio of different colours
White light electroluminescent device of organic thin film.Due to the material of different luminescent colors, its energy gap is different, white light organic film electricity
The control of electroluminescence device performance quality, key are the maximum blue light material of energy gap and the relatively low green light of energy gap, orange
It influences each other caused by energy transmission between luminescent material, the unbalanced of different-waveband is caused to shine.The present embodiment uses subregion
The luminous single luminous layer structure in domain, can by adjusting the thickness in the distance between different luminescent material regions and luminescent material,
The enhancing or inhibition for controlling the energy transmission between exciton, to change the luminous strong and weak ratio of different colours.Simultaneously as
Effective structure of energy transmission system and control, finally obtain the multispectral section of electroluminescent hair of white light organic film of spectrum-stable in device
Optical device.
Experiment test comparative analysis：
Experiment test comparative analysis, as seen from Figure 3, embodiment one are carried out to one~embodiment of the embodiment of the present invention three
In~embodiment three the obtained stable white light electroluminescent device of organic thin film with bipolarity mixed interval layer all have compared with
Good current efficiency, wherein the electroluminescent hair of stable white light organic film based on bipolarity mixed interval layer made from embodiment one
The maximum current efficiency of optical device is 49.5cd/A, and as shown in curve A, embodiment two is obtained to be based on bipolarity mixed interval layer
Stable white light electroluminescent device of organic thin film maximum current efficiency be 49.5cd/A, as curveb, embodiment three make
The maximum current efficiency of the stable white light electroluminescent device of organic thin film based on bipolarity mixed interval layer obtained is 47.8cd/
A, as illustrated by curve c.
It is organic thin to the stable white light of the stabilization with bipolarity mixed interval layer of one~embodiment of embodiment three respectively
Film electroluminescent device carries out spectroscopic test, obtains Fig. 4~Fig. 6.One~embodiment of embodiment three it can be seen from Fig. 4~Fig. 6
In the stable white light electroluminescent device of organic thin film based on bipolarity mixed interval layer obtained can be simultaneously emitted by orange green
The light of blue three colors, with the thickness of the bipolarity mixed interval layer 60 between green light ultra-thin light-emitting layer 70 and orange light ultra-thin light-emitting layer 80
The increase of degree, the energy transmission from green light ultra-thin light-emitting layer 70 to orange light ultra-thin light-emitting layer 50 are reduced therewith, wherein embodiment three
The luminescent spectrum of stable white light electroluminescent device of organic thin film obtained based on bipolarity mixed interval layer is most uniform, obtains
White light it is best.
The embodiment of the present invention is illustrated above in conjunction with attached drawing, but the present invention is not limited to the above embodiments, it can be with
The purpose of innovation and creation according to the present invention makes a variety of variations, under the Spirit Essence and principle of all technical solutions according to the present invention
Change, modification, replacement, combination or the simplification made, should be equivalent substitute mode, as long as meeting the goal of the invention of the present invention,
There is stable white light electroluminescent device of organic thin film and its preparation side of bipolarity mixed interval layer without departing from the present invention
The technical principle of method and inventive concept, belong to protection scope of the present invention.
Claims (11)
1. a kind of stable white light electroluminescent device of organic thin film with bipolarity mixed interval layer, it is characterised in that：Including
The substrate (10) that stacks gradually, anode (20), hole injection layer (30), hole transmission layer (40), orange light ultra-thin light-emitting layer (50),
The bipolarity mixed interval layer (60) of front side, bipolarity mixed interval layer (60), the blue light of green light ultra-thin light-emitting layer (70), rear side
Ultra-thin light-emitting layer (80), electron transfer layer (90), electron injecting layer (100) and cathode (110)；Its hole-transporting layer (40) is same
When also serve as electronic barrier layer；Orange light ultra-thin light-emitting layer (50), the bipolarity mixed interval layer (60) of front side, green light ultra-thin light-emitting layer
(70), the bipolarity mixed interval layer (60) of rear side and blue light ultra-thin light-emitting layer (80), which are formed, is layered discontinuous light-emitting film knot
Structure forms MULTILAYER COMPOSITE light emitting functional layer, and light emitting functional layer prepared by the luminescent material of different colours, which is set to bipolarity, mixes
It closes in the different zones that wall (60) is separated to form, forms the luminous single luminous layer structure in subregion, orange light ultra-thin light-emitting layer
(50), the thickness of green light ultra-thin light-emitting layer (70) or blue light ultra-thin light-emitting layer (80) is 0.05~1nm.
2. the stable white light electroluminescent device of organic thin film with bipolarity mixed interval layer according to claim 1,
It is characterized in that：The material of the bipolarity mixed interval layer (60) is mass ratio 1:5~5:The material of 1 electron transfer layer (90)
Thickness with the mixture of the material of hole transmission layer (30), the bipolarity mixed interval layer (60) is 2~8nm.
3. the stable white light electroluminescent device of organic thin film with bipolarity mixed interval layer according to claim 2,
It is characterized in that：The thickness of the bipolarity mixed interval layer (60) is 3~5nm.
4. according to the stable white light organic film electricity with bipolarity mixed interval layer described in any one of claims 1 to 3
Electroluminescence device, it is characterised in that：The single luminous layer structure to be shone using subregion, and can be by adjusting MULTILAYER COMPOSITE luminescent layer
In different colours luminescent material prepare the distance between light emitting functional layer, luminescent material thickness, to change different face
The luminous strong and weak ratio of color, forms multispectral section of white light electroluminescent device of organic thin film.
5. according to the stable white light organic film electricity with bipolarity mixed interval layer described in any one of claims 1 to 3
Electroluminescence device, it is characterised in that：It is set to the front side between orange light ultra-thin light-emitting layer (50) and green light ultra-thin light-emitting layer (70)
Bipolarity mixed interval layer (60) thickness, more than being set to green light ultra-thin light-emitting layer (70) and blue light ultra-thin light-emitting layer (80)
Between rear side bipolarity mixed interval layer (60) thickness.
6. according to the stable white light organic film electricity with bipolarity mixed interval layer described in any one of claims 1 to 3
Electroluminescence device, it is characterised in that：Orange light ultra-thin light-emitting layer (50), green light ultra-thin light-emitting layer (70) or blue light ultra-thin light-emitting layer
(80) it is the incomplete continuous film of overall structure.
7. according to the stable white light organic film electricity with bipolarity mixed interval layer described in any one of claims 1 to 3
Electroluminescence device, it is characterised in that：
The thickness of anode (20) is 80~200nm；
The thickness of hole injection layer (30) is 40~70nm；
The thickness of hole transmission layer (40) is 10~40nm；
The thickness of orange light ultra-thin light-emitting layer (50) is 0.1~1nm；
The thickness of green light ultra-thin light-emitting layer (70) is 0.05~0.2nm；
The thickness of blue light ultra-thin light-emitting layer (80) is 0.05~0.2nm；
The thickness of electron transfer layer (90) is 20~50nm；
The thickness of electron injecting layer (100) is 0.5~5nm；
The thickness of cathode (110) is 80~200nm.
8. the stable white light electroluminescent device of organic thin film with bipolarity mixed interval layer according to claim 7,
It is characterized in that：The thickness of hole transmission layer (40) is 25~27nm.
9. according to the stable white light organic film electricity with bipolarity mixed interval layer described in any one of claims 1 to 3
Electroluminescence device, it is characterised in that：
Substrate (10) uses transparent glass；
Alternatively, anode (20) using indium tin oxide, fluorine doped tin oxide, mix aluminium zinc oxide and indium-doped zinc oxide in appoint
It anticipates a kind of material and arbitrary several mixing materials is made；
Alternatively, it is 1 that hole injection layer (30) material, which is mass ratio,：1~1：2 MoO3With the mixture of TCTA；
Alternatively, hole transmission layer (40) is made of any one material in TCTA, MCP and CBP and arbitrary several mixing materials；
Alternatively, orange light ultra-thin light-emitting layer (50) using any one material in PO-01, PO-01-TB and Ir (bt) 2 (acac) and
Arbitrary several mixing materials are made；
Alternatively, green light ultra-thin light-emitting layer (70) is using any one material or two kinds of materials in Ir (ppy) 3 and Ir (ppy) 2 (acac)
Material is made；
Alternatively, blue light ultra-thin light-emitting layer (80) is made of any one material in FIrpic and BCzVBi or two kinds of materials；
Alternatively, electron transfer layer (90) is using any one material in TPBi, Bphen, TmPyPB and Tm3PyPB and arbitrary several
Mixing material is made；
Alternatively, electron injecting layer (100) is using lithium fluoride, lithium carbonate, cesium carbonate, nitridation caesium, cesium chloride (CsCl) and cesium fluoride
In any one material and arbitrary several mixing materials be made；
Alternatively, cathode (110) is made of any one material in aluminium, silver, magnesium, barium and calcium and arbitrary several mixing materials.
10. the stable white light electroluminescent device of organic thin film with bipolarity mixed interval layer according to claim 9,
It is characterized in that, it is 2 that hole injection layer (30) material, which is mass ratio,：3 MoO3With the mixture of TCTA；Alternatively, bipolarity mixes
It is 1 that the material of wall (60), which is mass ratio,：The mixture of 3.5 Tm3PyPB and TCTA.
11. the stable white light electroluminescent device of organic thin film with bipolarity mixed interval layer described in a kind of claim 1
Preparation method, which is characterized in that include the following steps：
A. substrate is cleaned, obtains the substrate of clean dried；
B. anode is prepared in the substrate by the step a treated clean drieds；
C. on the anode prepared in the step b, by vacuum vapour deposition, be sequentially prepared hole injection layer, hole transmission layer,
Orange light ultra-thin light-emitting layer, bipolarity mixed interval layer, green light ultra-thin light-emitting layer, bipolarity mixed interval layer, blue light ultra-thin light-emitting
Layer, electron transfer layer, electron injecting layer and cathode obtain multispectral section of white light electroluminescent device of organic thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810013889.5A CN108365111A (en) | 2018-01-08 | 2018-01-08 | Stable white light electroluminescent device of organic thin film and preparation method thereof with bipolarity mixed interval layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810013889.5A CN108365111A (en) | 2018-01-08 | 2018-01-08 | Stable white light electroluminescent device of organic thin film and preparation method thereof with bipolarity mixed interval layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108365111A true CN108365111A (en) | 2018-08-03 |
Family
ID=63011038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810013889.5A Pending CN108365111A (en) | 2018-01-08 | 2018-01-08 | Stable white light electroluminescent device of organic thin film and preparation method thereof with bipolarity mixed interval layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108365111A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109686851A (en) * | 2018-12-26 | 2019-04-26 | 上海晶合光电科技有限公司 | A kind of Organic Light Emitting Diode and preparation method thereof |
| CN110299463A (en) * | 2019-06-27 | 2019-10-01 | 上海大学 | The white light electroluminescent device of organic thin film of high color stability based on undoped ultra-thin light-emitting layer |
| CN110379928A (en) * | 2019-06-26 | 2019-10-25 | 苏州星烁纳米科技有限公司 | Quantum dot light emitting device, back light and lighting device |
| CN111933812A (en) * | 2020-08-17 | 2020-11-13 | 云谷（固安）科技有限公司 | Display panel |
| CN113036047A (en) * | 2021-03-08 | 2021-06-25 | 上海大学 | OLED plant growth light source and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100809935B1 (en) * | 2006-10-09 | 2008-03-06 | 엘지.필립스 엘시디 주식회사 | Light emitting device |
| CN101447555A (en) * | 2008-12-29 | 2009-06-03 | 中国科学院长春应用化学研究所 | Laminated organic electro-luminescent device of an organic semiconductor-based hetero-junction electric-charge generating layer taken as a connecting layer and preparation method thereof |
| CN102074658A (en) * | 2010-11-01 | 2011-05-25 | 中国科学院长春应用化学研究所 | Electric charge production layer, lamination layer organic light-emitting diode and preparation method thereof |
| CN102709482A (en) * | 2012-06-26 | 2012-10-03 | 吉林大学 | Phosphorescence and fluorescence combined white organic light emitting device |
| CN102779948A (en) * | 2012-07-31 | 2012-11-14 | 京东方科技集团股份有限公司 | White organic electroluminescent device and manufacturing method thereof |
| CN105449109A (en) * | 2015-12-28 | 2016-03-30 | 工业和信息化部电子第五研究所 | Organic electroluminescence device capable of simulating sunlight and preparation method thereof |
| CN105489783A (en) * | 2016-01-22 | 2016-04-13 | 工业和信息化部电子第五研究所 | Non-doped white light organic electroluminescence device |
| CN106784358A (en) * | 2017-01-11 | 2017-05-31 | 广东工业大学 | A kind of white light organic electroluminescent device |
-
2018
- 2018-01-08 CN CN201810013889.5A patent/CN108365111A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100809935B1 (en) * | 2006-10-09 | 2008-03-06 | 엘지.필립스 엘시디 주식회사 | Light emitting device |
| CN101447555A (en) * | 2008-12-29 | 2009-06-03 | 中国科学院长春应用化学研究所 | Laminated organic electro-luminescent device of an organic semiconductor-based hetero-junction electric-charge generating layer taken as a connecting layer and preparation method thereof |
| CN102074658A (en) * | 2010-11-01 | 2011-05-25 | 中国科学院长春应用化学研究所 | Electric charge production layer, lamination layer organic light-emitting diode and preparation method thereof |
| CN102709482A (en) * | 2012-06-26 | 2012-10-03 | 吉林大学 | Phosphorescence and fluorescence combined white organic light emitting device |
| CN102779948A (en) * | 2012-07-31 | 2012-11-14 | 京东方科技集团股份有限公司 | White organic electroluminescent device and manufacturing method thereof |
| CN105449109A (en) * | 2015-12-28 | 2016-03-30 | 工业和信息化部电子第五研究所 | Organic electroluminescence device capable of simulating sunlight and preparation method thereof |
| CN105489783A (en) * | 2016-01-22 | 2016-04-13 | 工业和信息化部电子第五研究所 | Non-doped white light organic electroluminescence device |
| CN106784358A (en) * | 2017-01-11 | 2017-05-31 | 广东工业大学 | A kind of white light organic electroluminescent device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109686851A (en) * | 2018-12-26 | 2019-04-26 | 上海晶合光电科技有限公司 | A kind of Organic Light Emitting Diode and preparation method thereof |
| CN110379928A (en) * | 2019-06-26 | 2019-10-25 | 苏州星烁纳米科技有限公司 | Quantum dot light emitting device, back light and lighting device |
| CN110299463A (en) * | 2019-06-27 | 2019-10-01 | 上海大学 | The white light electroluminescent device of organic thin film of high color stability based on undoped ultra-thin light-emitting layer |
| CN111933812A (en) * | 2020-08-17 | 2020-11-13 | 云谷（固安）科技有限公司 | Display panel |
| CN111933812B (en) * | 2020-08-17 | 2024-01-26 | 云谷（固安）科技有限公司 | Display panel |
| CN113036047A (en) * | 2021-03-08 | 2021-06-25 | 上海大学 | OLED plant growth light source and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108365111A (en) | Stable white light electroluminescent device of organic thin film and preparation method thereof with bipolarity mixed interval layer | |
| CN101946340B (en) | Organic optoelectronic device and method for manufacturing the same | |
| KR20080015356A (en) | Organic electroluminescent device and preparation method thereof | |
| CN102694127A (en) | Organic light-emitting diode, display and illuminating device | |
| CN106784363B (en) | A kind of organic light emitting display panel, electronic equipment and production method | |
| CN103219471A (en) | Top-emitting organic electroluminescent device based on semi-transparent composite negative electrode and preparation method for top-emitting organic electroluminescent device | |
| CN103762317B (en) | A kind of organic electroluminescence device | |
| CN101170853A (en) | A white light organic EL part consisting of RGB and its making method | |
| CN102414858B (en) | Electroluminescent device | |
| CN108123050A (en) | A kind of white light OLED device with exchange driving | |
| WO2009021365A1 (en) | Oled and method thereof | |
| CN101859879A (en) | White organic electroluminescent device and preparation method thereof | |
| CN101123298A (en) | A structure-optimized white light organic EL part | |
| CN102208552A (en) | White-light organic electroluminescent device and preparation method thereof | |
| CN102130301B (en) | White organic electroluminescence device based on color conversion and manufacturing method thereof | |
| CN104882546A (en) | Organic electroluminescent device and preparation method thereof | |
| CN102169965A (en) | An OLED device and a manufacturing method thereof | |
| CN109390489A (en) | Light emitting diode and the preparation method and application thereof | |
| CN104882545A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104183721A (en) | Organic light emitting diode and preparation method thereof | |
| KR20090058156A (en) | Two side emission white organic light emitting diodes and their fabrication methods | |
| CN102779950A (en) | Organic LED (light-emitting diode) | |
| CN104218163A (en) | Organic light emission diode device and fabrication method | |
| CN104078622A (en) | Organic light-emitting diode device and manufacturing method thereof | |
| CN104183722A (en) | White-light organic light emission diode and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180803 |
|
| RJ01 | Rejection of invention patent application after publication |