CN108364972A - Fexible film GaN base nano-pillar LED array micro-display device and preparation method thereof - Google Patents
Fexible film GaN base nano-pillar LED array micro-display device and preparation method thereof Download PDFInfo
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- CN108364972A CN108364972A CN201810290560.3A CN201810290560A CN108364972A CN 108364972 A CN108364972 A CN 108364972A CN 201810290560 A CN201810290560 A CN 201810290560A CN 108364972 A CN108364972 A CN 108364972A
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- 239000002061 nanopillar Substances 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000010408 film Substances 0.000 claims abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 230000000737 periodic effect Effects 0.000 claims abstract description 18
- 230000000873 masking effect Effects 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 229910002704 AlGaN Inorganic materials 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 238000004033 diameter control Methods 0.000 claims description 2
- 238000004020 luminiscence type Methods 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000004744 fabric Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 206010040844 Skin exfoliation Diseases 0.000 abstract description 2
- 230000008859 change Effects 0.000 abstract description 2
- 230000035618 desquamation Effects 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention relates to the technical fields of light emitting semiconductor device, more particularly, to fexible film GaN base nano-pillar LED array micro-display device and preparation method thereof.Fexible film GaN base nano-pillar LED array micro-display device, wherein, the masking film with periodic arrangement trepanning including substrate, on substrate, the nano-pillar structure mini LED array on the masking film with periodic arrangement trepanning, the transparency conducting layer on nano-pillar structure mini LED array, cover the flexible thin-film material of entire sample surfaces, flexible thin-film material is equipped with positive electrode, the negative electrode vertical with positive electrode.The surface damage of device is not present in the nano-pillar LED of preparation, can realize ultralow leakage current and super low-power consumption.The pattern that nano-pillar LED sizes can shelter film by change is regulated and controled, and can more easily be realized the display element of nanoscale, be reached the requirement of ultrahigh resolution.Device is prepared on flexible thin-film material by substrate desquamation, realizes the Flexible Displays of GaN base LED array micro-display device.
Description
Technical field
The present invention relates to the technical fields of light emitting semiconductor device, more particularly, to fexible film GaN base nano-pillar
LED array micro-display device and preparation method thereof.
Background technology
Group III-nitride GaN（Energy gap 3.4eV）、AlN（Energy gap 6.2eV）、InN（Energy gap 0.7eV）And
Its alloy energy gap formed covers the energy range from infrared to visible light, ultraviolet light, therefore in photogenerator
The field of part has a wide range of applications.In recent years, with the progress of the development of electronic industry and industrial technology, it is based on III group nitrogen
The Miniature luminous device part of compound is quickly grown, and has opened up the new opplication field of group III-nitride base luminescent device.
Currently, micro-display device has relied on its unique advantage to become the hot spot that various countries are paid close attention to, LED micro-display devices tool
There are many unique advantages, such as actively shine, super brightness, the long-life, operating voltage is low, luminous efficiency is high, fast response time,
It is stable and reliable for performance, operating temperature range is wide etc..Traditional LED micro-display devices are in LED epitaxial wafer using from top to bottom
Preparation method, be harmonious plasma by inductance（ICP）Etching is isolated and prepares each independent miniature LED chip, then
Multiple miniature LED chips are prepared into the LED micro-display devices of array structure into line lead and encapsulation.By ICP etching technics
Precision limits, and the luminous pixel dimension of the display device that the method makes is difficult to do small, therefore resolution ratio is subject to certain restrictions, and
Inadaptable miniaturization from now on, sharpening development need.On the other hand, ICP etchings can cause miniature LED chip surface to be formed
A large amount of lattice damage introduces a large amount of leak channel, affects the luminous efficiency of device.In addition, traditional LED micro-displays
Part is largely limited its scope of application due to unyielding feature.Therefore, the selective area extension of MOCVD is given birth to
Long technology is combined to apply with fexible film semiconductor technology technology of preparing has wide production on LED array micro-display device
Industry foreground.
Invention content
The present invention is at least one defect overcome described in the above-mentioned prior art, to solve the electric leakage of LED micro-display devices
Flow problem, it is difficult to realize the limitation of the luminous pixel of small size and lack the characteristic of Flexible Displays, fexible film GaN base is provided and is received
Rice column LED array micro-display device and preparation method thereof can produce the soft of ultralow leakage current and super low-power consumption using this method
Property film LED array microdisplay device, and micro-display device display element scale can reach nanoscale.
The technical scheme is that：Fexible film GaN base nano-pillar LED array micro-display device, wherein including lining
Bottom, the masking film with periodic arrangement trepanning on substrate, the nanometer on the masking film with periodic arrangement trepanning
Rod structure Minitype LED array, the transparency conducting layer on nano-pillar structure mini LED array, cover entire sample surfaces
Flexible thin-film material, flexible thin-film material are equipped with positive electrode, the negative electrode vertical with positive electrode.
The production method of fexible film GaN base nano-pillar LED array micro-display device, wherein：Include the following steps：
（A）Deposition medium shelters film on substrate, and medium is sheltered film preparation into periodic arrangement by the method for wet etching
The masking film of trepanning；
（B）One step epitaxial growth nanometer rod structure of selective area is micro- on the substrate of the masking film with periodic arrangement trepanning
Type LED array；
（C）Transparency conducting layer is prepared on nano-pillar structure mini LED array surface, then flexible thin-film material is covered into entire sample
Surface；
（D）Positive electrode is prepared on flexible thin-film material, positive electrode is interconnected with transparency conducting layer, is realized per a line nano-pillar structure
The row interconnection of Minitype LED array；
（E）Substrate material is removed with the method for wet etching, and overleaf prepares negative electrode, negative electrode mutually hangs down with positive electrode
Directly, the row interconnection for realizing each row nano-pillar structure mini LED array finally gets through hole and negative electrode is guided to sample front.
Further, the nano-pillar structure mini LED array is by metal-organic chemical vapor deposition equipment MOCVD
For one step epitaxial growth of selective area on the substrate of the masking film with periodic arrangement trepanning, pattern is cylindric or six
Prism-shaped, it is more that material structure is followed successively by GaN nanometers of AlGaN nucleating layers, N-shaped rod structures, InGaN/GaN from down to up from the inside to surface
Mqw light emitting layer and p-type GaN layer, or be followed successively by AlGaN nucleating layers, GaN nanometers of rod structures of N-shaped, N-shaped AlGaN transition zones,
GaN/AlGaN multi-quantum well luminescence layers and p-type AlGaN layer；And the growth position and diameter of nano-pillar structure mini LED array
Window area position by the masking film with periodic arrangement trepanning and window diameter control.
Further, the single display pixel diameter that the nano-pillar structure mini LED array is constituted is 10~
500nm.The material of the described masking film with periodic arrangement trepanning is silica or silicon nitride, and deposition method is etc.
Gas ions enhance chemical vapor deposition PECVD or magnetron sputtering, and thickness range is in 10nm~500nm.The electrically conducting transparent
Layer thickness is 10~200nm, covers single led nanometer rod structure, and have fraction to extend outwardly, good with positive electrode to ensure
Good contact.
Flexible thin-film material's thickness is 1~10 μm, has certain adhesion strength and light transmittance, to ensure nano-pillar
The luminous efficiency of structure mini LED array.
The positive electrode is prepared on sample front, and the side of flexible thin-film material is interconnected with transparency conducting layer, and
And do not stop shining for nano-pillar structure mini LED array, share a positive electrode per LED nanometers of rod structures of a line.
Further, the substrate is the material that can be removed by corrosion or etching technics, and it corrodes or carves
Etching technique has certain selectivity, will not damage other important device architectures.The negative electrode is prepared at the sample back side,
There is no the side of flexible thin-film material, be mutually perpendicular to positive electrode, and gets through hole and negative electrode is guided sample front, each row
LED nanometers of rod structures share a negative electrode, realize the matrix addressing of nano-pillar structure mini LED array.
Compared with prior art, advantageous effect is：
1. using the structure technique from bottom to top based on one step growth technology of selective area, the table of device is not present
Surface damage can realize ultralow leakage current and super low-power consumption.
2. the display element of fexible film GaN base nano-pillar LED array micro-display device is using based on selective area
The micro- LED of nanometer rod structure that zone epitaxial growth technology is prepared, the pattern that size can shelter film by change are adjusted
Control, can more easily realize the display element of nanoscale, reach the requirement of ultrahigh resolution.
3. preparing device on flexible thin-film material by substrate desquamation, GaN base LED array micro-display device is realized
Flexible Displays.
Description of the drawings
Fig. 1-5 is that the fexible film GaN base nano-pillar LED array micro-display device that the embodiment of the present invention 1 provides prepares stream
The front view of journey figure.
Fig. 6-10 is prepared by the fexible film GaN base nano-pillar LED array micro-display device that the embodiment of the present invention 1 provides
The vertical view of flow chart.
Figure 11 is that the fexible film GaN base nano-pillar LED array micro-display device that present example 2 provides prepares schematic diagram
Front view.
Figure 12 is that the fexible film GaN base nano-pillar LED array micro-display device that present example 2 provides prepares schematic diagram
Vertical view.
Figure 13 is that the fexible film GaN base nano-pillar LED array micro-display device that present example 2 provides prepares schematic diagram
Side view.
Specific implementation mode
The attached figures are only used for illustrative purposes and cannot be understood as limitating the patent；It is attached in order to more preferably illustrate the present embodiment
Scheme certain components to have omission, zoom in or out, does not represent the size of actual product；To those skilled in the art,
The omitting of some known structures and their instructions in the attached drawings are understandable.Being given for example only property of position relationship described in attached drawing
Illustrate, should not be understood as the limitation to this patent.
Embodiment 1
As Figure 1-10 shows, 1- silicon substrates, SiOs of the 2- with periodic arrangement trepanning2Shelter film, 3- nano-pillar structure minis LED
Array, 4-ITO transparency conducting layers, 5- flexible thin-film materials, 6- positive electrodes, 7- negative electrodes.
As Figure 1-10 shows, a kind of fexible film GaN base based on one step growth technology of selective area is provided
Nano-pillar LED array micro-display device production method, includes the following steps：
（A）The SiO of 100nm thickness is deposited with PECVD on a silicon substrate2Medium shelters film, passes through the method handle of chemical wet etching
Medium shelters SiO of the film preparation at periodic arrangement trepanning2Shelter film, opening diameter 50nm；
（B）In the SiO with periodic arrangement trepanning2It shelters high with the one step epitaxial growth of MOCVD selective areas on the substrate of film
The Minitype LED array of the nanometer rod structure of about 400nm diameters about 80nm；
（C）The transparent conductive layer of 50nm thickness is prepared on the surface of nano-pillar structure mini LED array, then by the flexibility of 1 μ m-thick
Thin-film material covers entire sample surfaces；
（D）Positive electrode is prepared on flexible thin-film material, positive electrode is interconnected with transparent conductive layer, is realized per a line nano-pillar
The row interconnection of structure mini LED array；
（E）Silicon substrate material is removed with the method for chemical wet etching, and overleaf prepares negative electrode, negative electrode and positive electrode phase
It is mutually vertical, it realizes the row interconnection of each row nano-pillar structure mini LED array, finally gets through hole and negative electrode is being guided into sample just
Face.
By above-mentioned preparation process, fexible film GaN base that successfully prepare matrix addressing, a diameter of 80nm of pixel is received
Rice column LED array micro-display device.
Embodiment 2
The present embodiment is similar to Example 1, as shown in Figure 11, Figure 12 and Figure 13, almost the same epitaxial structure, device architecture and
Preparation flow, wherein the hexa-prism that the nano-pillar structure mini LED array in embodiment 1 is replaced in embodiment 2 is miniature
LED array.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be to this hair
The restriction of bright embodiment.For those of ordinary skill in the art, it can also do on the basis of the above description
Go out other various forms of variations or variation.There is no necessity and possibility to exhaust all the enbodiments.It is all in the present invention
Spirit and principle within made by all any modification, equivalent and improvement etc., should be included in the guarantor of the claims in the present invention
Within the scope of shield.
Claims (10)
1. fexible film GaN base nano-pillar LED array micro-display device, which is characterized in that including substrate（1）, be set to substrate（1）
On the masking film with periodic arrangement trepanning（2）, set on the masking film with periodic arrangement trepanning（2）On nanometer rod structure
Minitype LED array（3）, be set to nano-pillar structure mini LED array（3）On transparency conducting layer（4）, cover entire sample surfaces
Flexible thin-film material（5）, flexible thin-film material（5）It is equipped with positive electrode（6）, with positive electrode（6）Vertical negative electrode（7）.
2. the production method of fexible film GaN base nano-pillar LED array micro-display device, it is characterised in that：Include the following steps：
（A）In substrate（1）Upper deposition medium shelters film, and medium is sheltered film preparation into periodical row by the method for wet etching
The masking film of cloth trepanning（2）；
（B）In the masking film with periodic arrangement trepanning（2）Substrate（1）One step epitaxial growth nano-pillar knot of upper selective area
The Minitype LED array of structure（3）；
（C）In nano-pillar structure mini LED array（3）Surface prepares transparency conducting layer（4）, then by flexible thin-film material（5）It covers
Cover entire sample surfaces；
（D）Positive electrode is prepared on flexible thin-film material（6）, positive electrode（6）With transparency conducting layer（4）Interconnection is realized per a line
Nano-pillar structure mini LED array（3）Row interconnection；
（E）Substrate is removed with the method for wet etching（1）Material, and overleaf prepare negative electrode（7）, negative electrode（7）With positive electricity
Pole（6）It is mutually perpendicular to, realizes each row nano-pillar structure mini LED array（3）Row interconnection, finally get through hole by negative electrode
（7）Guide to sample front.
3. the production method of fexible film GaN base nano-pillar LED array micro-display device according to claim 2, special
Sign is：The nano-pillar structure mini LED array（3）It is by metal-organic chemical vapor deposition equipment MOCVD selectivity
One step epitaxial growth of region is in the masking film with periodic arrangement trepanning（2）Substrate（1）On, pattern is cylindric or six
Prism-shaped, it is more that material structure is followed successively by GaN nanometers of AlGaN nucleating layers, N-shaped rod structures, InGaN/GaN from down to up from the inside to surface
Mqw light emitting layer and p-type GaN layer, or be followed successively by AlGaN nucleating layers, GaN nanometers of rod structures of N-shaped, N-shaped AlGaN transition zones,
GaN/AlGaN multi-quantum well luminescence layers and p-type AlGaN layer；And nano-pillar structure mini LED array（3）Growth position and
Diameter is by the masking film with periodic arrangement trepanning（2）Window area position and window diameter control.
4. the production method of fexible film GaN base nano-pillar LED array micro-display device according to claim 2, special
Sign is：The nano-pillar structure mini LED array（3）The single display pixel diameter of composition is 10~500nm.
5. the production method of fexible film GaN base nano-pillar LED array micro-display device according to claim 2, special
Sign is：The masking film with periodic arrangement trepanning（2）Material be silica or silicon nitride, deposition method
For plasma enhanced chemical vapor deposition PECVD or magnetron sputtering, thickness range is in 10nm~500nm.
6. the production method of fexible film GaN base nano-pillar LED array micro-display device according to claim 2, special
Sign is：The transparency conducting layer（4）Thickness is 10~200nm, covers single led nanometer rod structure, and have fraction
Extend outwardly, with guarantee and positive electrode（6）Good contact.
7. the production method of fexible film GaN base nano-pillar LED array micro-display device according to claim 2, special
Sign is：The flexible thin-film material（5）Thickness is 1~10 μm, has certain adhesion strength and light transmittance, to ensure nanometer
Rod structure Minitype LED array（3）Luminous efficiency.
8. the production method of fexible film GaN base nano-pillar LED array micro-display device according to claim 2, special
Sign is：The positive electrode（6）It is prepared on sample front, flexible thin-film material（5）Side, it is mutual with transparency conducting layer
Connection, and do not stop nano-pillar structure mini LED array（3）Shine, a shared positive electrode per a line LED nanometer rod structures
（6）.
9. the production method of fexible film GaN base nano-pillar LED array micro-display device according to claim 2, special
Sign is：The substrate（1）For can by corrosion or etching technics remove material, and its corrosion or etching technics tool
There is certain selectivity, other important device architectures will not be damaged.
10. the production method of fexible film GaN base nano-pillar LED array micro-display device according to claim 2, special
Sign is：The negative electrode（7）It prepares at the sample back side, without flexible thin-film material（5）Side, with positive electrode（6）Phase
It is mutually vertical, and hole is got through negative electrode（7）Sample front, the LED nanometer rod structures of each row is guided to share a negative electrode
（7）, realize nano-pillar structure mini LED array（3）Matrix addressing.
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| CN113451108A (en) * | 2020-03-24 | 2021-09-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | Super-flexible transparent semiconductor film and preparation method thereof |
| CN113614823A (en) * | 2019-03-29 | 2021-11-05 | 京瓷株式会社 | Display device |
| CN114824013A (en) * | 2022-05-20 | 2022-07-29 | 厦门大学 | Flexible gallium nitride-based LED and preparation method thereof |
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| CN113451108A (en) * | 2020-03-24 | 2021-09-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | Super-flexible transparent semiconductor film and preparation method thereof |
| CN112362615A (en) * | 2020-10-23 | 2021-02-12 | 西安理工大学 | CNTs super surface and micro-channel integrated THz sensor and manufacturing method |
| CN112362615B (en) * | 2020-10-23 | 2022-12-06 | 西安理工大学 | CNTs super surface and micro-channel integrated THz sensor and manufacturing method |
| CN114824013A (en) * | 2022-05-20 | 2022-07-29 | 厦门大学 | Flexible gallium nitride-based LED and preparation method thereof |
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