CN108364859A - A kind of atomic layer lithographic method using laser direct-writing - Google Patents
A kind of atomic layer lithographic method using laser direct-writing Download PDFInfo
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- CN108364859A CN108364859A CN201810143612.4A CN201810143612A CN108364859A CN 108364859 A CN108364859 A CN 108364859A CN 201810143612 A CN201810143612 A CN 201810143612A CN 108364859 A CN108364859 A CN 108364859A
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- Prior art keywords
- writing
- atomic layer
- laser direct
- lithographic method
- laser
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Abstract
Present invention is disclosed a kind of atomic layer lithographic methods using laser direct-writing, specifically include following steps：Step a：Choose GaAs substrates；Step b：Oxide layer processing and grown buffer layer processing are removed to the GaAs substrates；Step c：InAs films or InGaAs films are deposited in the substrate obtained by the step b；Step d：Using carrying out patterned inscription on InAs films of the laser direct-writing obtained by the step c or InGaAs films.The preparation method can realize the etching of atomic layer accuracy on GaAs sills surface, and prepare simplicity, and structure has designability.
Description
Technical field
Laser writing technology, more particularly to a kind of atomic layer etching side using laser direct-writing are used the present invention relates to a kind of
Method.
Background technology
Nanostructure is widely used in integrated circuit, the fields such as opto-electronic device and biological medicine.The performance of device
It is inseparable with the size of nanostructure.With the continuous promotion of device integration, the size of structure constantly reduces.With chip
Manufacture for, the cell phone processor of mainstream has used 14/16nm etch process at present.With nanostructure characteristic size not
It is disconnected to reduce, the control of the depth of etching is also had higher requirement.In addition, traditional reactive ion etching, that is, pass through high energy
Plasma bombardment sample surfaces carry out material removal, inevitably introduce impurity and (ion that bombardment uses) and substrate made
At structural damage, thus device performance is caused to decline.To solve these problems, atomic layer lithographic technique is generally used at present.Institute
Atomic layer etching is called, is a kind of technology that can accurately control removed quantity of material.By being modified to sample surfaces, only make surface
Atomic layer can be removed in etching.Cycle is repeated several times, obtains desired etching depth.It is etched with the atomic layer of silicon chip
For, the removal of monoatomic layer comprises the steps of：(1) be passed through chlorine in etch chamber, chlorine molecule then physical absorption in silicon
Material surface；(2) excessive chlorine in etch chamber is emptied；(3) argon ion bombardment sample surfaces are used, the silicon-of sample surfaces is removed
Chlorine layer, the process that removes have from restricted, and after chlorination layer is removed, which terminates；(4) product emptying will be removed.It is more
It is secondary to repeat above step, desired etching depth may be implemented.In conclusion current atomic layer lithographic technique, process is complicated,
Need special equipment, high processing costs.
Invention content
The purpose of the present invention is to provide a kind of atomic layer lithographic method based on laser writing technology, this method can be
The etching of atomic layer accuracy is realized on GaAs sills surface, and preparation method is easy, and structure has designability.
For achieving the above object, the technical scheme is that：A kind of atomic layer etching side using laser direct-writing
Method, the preparation method comprises the following steps：
Step a：Choose GaAs substrates；
Step b：Oxide layer processing and grown buffer layer processing are removed to the GaAs substrates；
Step c：InAs films or InGaAs films are deposited in the substrate obtained by the step b；
Step d：It is patterned using being carried out on InAs films of the laser direct-writing obtained by the step c or InGaAs films
It inscribes.
In addition, the present invention also provides following attached technical schemes：
GaAs substrates in the step a include GaAs (001), GaAs (111) or the GaAs that other particular crystal planes are orientated
One kind in substrate.
One kind in molecular beam epitaxial device or vapor phase epitaxial growth equipment is used to the processing of substrate in the step b.
Between the growth thickness of buffer layer is 10nm-10 μm in the step b.
The thickness of InAs (ML, mono-layer, atomic monolayer) between 0.1ML-1.5ML in the step c.
The thickness of InGaAs is between 1nm-50nm in the step c.
In the step d, it is irradiated to the laser parameter of sample surfaces, between 1ns-1000ns, energy density is pulsewidth
1mJ/cm2-1J/cm2Between.
The execution atmosphere of the step d includes one kind in air atmosphere, vacuum or atmosphere of inert gases.
Preferably, the execution atmosphere of the step d includes one kind in vacuum or atmosphere of inert gases.
Preferably, in the step d, between the temperature of substrate is 10 DEG C -550 DEG C.
In the step d, the depth that laser single is inscribed is between 0.3nm-3nm；
In the step d, the laser writing same position at least alignment twice.
Beneficial effects of the present invention：
1. a kind of atomic layer lithographic method using laser direct-writing that the present invention is protected, includes the following steps：Step a：
Choose GaAs substrates；Step b：Oxide layer processing and grown buffer layer processing are removed to the GaAs substrates；Step c：
InAs films or InGaAs films are deposited in the substrate obtained by the step b；Step d：Using laser direct-writing in the step c institutes
Patterned inscription is carried out on the InAs films or InGaAs films obtained, compared with the prior art, it is straight that present invention uses laser
Write device, graphical as GaAs sill surface micro-nano structures prepare tool, and the preparation method is easy, and graphic structure has
There is designability.
2. using one in molecular beam epitaxial device or vapor phase epitaxial growth equipment to the processing of substrate in the step b
Kind, therefore the common apparatus that equipment of the present invention is laser writing field, this method be not high to equipment requirement；
3. the present invention is by reasonable disposition laser parameter, it can be achieved that the etching of atomic layer magnitude depth.
Description of the drawings
Fig. 1 is the atomic force microscopy diagram of GaAs sill surface atom layer patterns before laser direct-writing in embodiment one.
Fig. 2 is to carry out laser direct-writing schematic diagram on GaAs sills surface in embodiment one.
Fig. 3 is the atomic force microscopy diagram using laser direct-writing by the inscription of surface atom layer at raster-like in embodiment one.
Fig. 4 is the atomic force microscope with laser direct-writing by the inscription of surface atom layer at Periodic Rectangular shape in embodiment one
Figure.
Specific implementation mode
Below in conjunction with preferable case study on implementation and its attached drawing to technical solution of the present invention do further it is unrestricted specifically
It is bright.
The present invention provides a kind of atomic layer lithographic method using laser direct-writing, which includes the following steps：
Step a：Choose GaAs substrates；
Step b：Oxide layer processing and grown buffer layer processing are carried out to the GaAs substrates；
Step c：InAs films or InGaAs films are deposited in the substrate obtained by the step b；
Step d：It is patterned using being carried out on InAs films of the laser direct-writing obtained by the step c or InGaAs films
It inscribes.
Embodiment 1：A kind of atomic layer lithographic method based on laser writing technology, the preparation method include following step
Suddenly：
Step a：GaAs (001) substrates are chosen as substrate, which indicates (001) high preferred orientation
GaAs substrates；
Step b：GaAs (001) substrate is put into molecular beam epitaxial device cushion chamber, intracavitary pressure is evacuated to 10-8torr
Magnitude, heating substrate maintain 3 hours to 200 DEG C, the moisture and gas of removal substrate surface absorption.After degassing, substrate is reached
In growth room, underlayer temperature is risen to 600 DEG C under rich arsenic atmosphere, maintains 15 minutes, the oxide layer of substrate surface is made to be desorbed.It goes
After complete oxide layer, substrate temperature is down to 580 DEG C, 1.5 × 10-6The As of torr2It is raw with the rate of 600nm/h under line
The GaAs buffer layers of long 600nm.
Step c：After buffer growth, underlayer temperature is down to 480 DEG C, deposits InAs (ML, mono-layer, the original of 1ML
Sub- single layer).Substrate temperature is then down to 100 DEG C, and is taken out from molecular beam epitaxial device.It is tested using atomic force microscope
Sample surface morphology, atomic layer structure are as shown in Figure 1.
Step d：Inscription, schematic diagram such as Fig. 2 institutes are patterned on the film obtained by step c using laser direct-writing
Show.Laser focuses on sample surfaces by object lens, coordinates the accurate movement of objective table, can prepare various figures in sample surfaces
Shape structure.Laser pulse width 10ns is chosen, the energy density 180mJ/cm of substrate surface is radiated at2, depth that single is inscribed
For 0.6nm.Inscription environment is room temperature, air atmosphere.In the grating-like structure and rectangular structure of substrate surface manufacturing cycle,
Atomic layer pattern difference is as shown in Figure 3 and Figure 4, wherein Fig. 3 (a) and the pattern that Fig. 4 (a) is structural edge.It can be clear in figure
Find out, laser direct-writing realizes the inscription of atomic layer magnitude depth in substrate surface.Certainly, changeable and depth in order to realize
It inscribes, we can carry out multiple alignment in same position.
It should be noted that substrate, substrate, the substrate described in us are identical concept, it is only different form of presentation
.
Embodiment 2：A kind of atomic layer lithographic method based on laser writing technology, the preparation method include following step
Suddenly：
Step a：GaAs (011) substrates are chosen as substrate, which indicates (011) high preferred orientation
GaAs substrates；
Step b：GaAs (011) substrate is put into molecular beam epitaxial device cushion chamber, intracavitary pressure is evacuated to 10-8torr
Magnitude, heating substrate maintain 3 hours to 200 DEG C, the moisture and gas of removal substrate surface absorption.After degassing, substrate is reached
In growth room, underlayer temperature is risen to 600 DEG C under rich arsenic atmosphere, maintains 15 minutes, the oxide layer of substrate surface is made to be desorbed.It goes
After complete oxide layer, substrate temperature is down to 580 DEG C, 1.5 × 10-6The As of torr2Under line, with the rate of 1 μm/h, growth
5 μm of GaAs buffer layers.
Step c：After buffer growth, underlayer temperature is down to 480 DEG C, deposits the InGaAs layers of 20nm.Then by substrate
Temperature is down to 100 DEG C, and is taken out from molecular beam epitaxial device.
Step d：Inscription, schematic diagram such as Fig. 2 institutes are patterned on the film obtained by step c using laser direct-writing
Show.Laser focuses on sample surfaces by object lens, coordinates the accurate movement of objective table, can prepare various figures in sample surfaces
Shape structure.Laser pulse width 1000ns is chosen, the energy density 1J/cm of substrate surface is radiated at2.Inscription environment is vacuum atmosphere
It encloses, room temperature, vacuum degree 1 × 10-6torr.Verified, the depth that laser direct-writing is inscribed in substrate surface single is 3nm, is realized
The inscription of atomic layer magnitude depth.
Embodiment 3：A kind of atomic layer lithographic method based on laser writing technology, the preparation method include following step
Suddenly：
Step a：GaAs (111) substrates are chosen as substrate, which indicates (111) high preferred orientation
GaAs substrates；
Step b：GaAs (111) substrate is put into molecular beam epitaxial device cushion chamber, intracavitary pressure is evacuated to 10-8torr
Magnitude, heating substrate maintain 3 hours to 200 DEG C, the moisture and gas of removal substrate surface absorption.After degassing, substrate is reached
In growth room, underlayer temperature is risen to 600 DEG C under rich arsenic atmosphere, maintains 15 minutes, the oxide layer of substrate surface is made to be desorbed.It goes
After complete oxide layer, substrate temperature is down to 580 DEG C, 1.5 × 10-6The As of torr2It is raw with the rate of 100nm/h under line
The GaAs buffer layers of long 50nm.
Step c：After buffer growth, underlayer temperature is down to 480 DEG C, deposits the InAs layers of 0.2ML.Then by substrate temperature
Degree is down to 100 DEG C, and is taken out from molecular beam epitaxial device.
Step d：Inscription, schematic diagram such as Fig. 2 institutes are patterned on the film obtained by step c using laser direct-writing
Show.Laser focuses on sample surfaces by object lens, coordinates the accurate movement of objective table, can prepare various figures in sample surfaces
Shape structure.Laser pulse width 1ns is chosen, the energy density 1mJ/cm of substrate surface is radiated at2.It is 1 × 10 to inscribe environment4torr
Argon atmosphere, 550 DEG C of underlayer temperature.Verified, the depth that laser direct-writing is inscribed in substrate surface single is 0.3nm, is realized
The inscription of atomic layer magnitude depth.
Except case study on implementation described above, the oxide layer processing of GaAs substrates, the growth of buffer growth material and
The deposition of InAs or InGaAs films, the method that vapor phase epitaxial growth can also be used.Vapor phase epitaxial growth and molecular beam epitaxy
All it is the growing technology that field of semiconductor materials is common, ripe.GaAs high preferred orientations, buffer layer thickness, InAs or InGaAs layer
The selection of thickness is decided by actual application demand, does not directly affect inscription effect.The inscription effect of laser direct-writing and laser
Parameter, substrate temperature are directly related.Higher underlayer temperature is chosen, the energy threshold or phase of atomic layer inscription can be reduced
With under power density, increases and inscribe depth.Inscription in air, sample surfaces are oxidized easily, or by impurity in air
Pollution can be implemented to inscribe in vacuum or inert gas, improve the quality of material after processing.
Pattern in case study on implementation is only exemplary, can be designed a wide variety of patterns according to the demand of application.
Present invention uses laser direct writing equipment, graphical as GaAs sill surface micro-nano structures prepares tool,
The preparation method is easy, and graphic structure has designability；Equipment of the present invention is the general of laser writing field
Equipment, this method be not high to equipment requirement；The present invention is by reasonable disposition laser parameter, it can be achieved that the quarter of atomic layer magnitude depth
Erosion.Finally it should be noted that：The foregoing is merely the preferred embodiments of patent of the present invention, are not intended to restrict the invention,
Although the present invention is described in detail referring to the foregoing embodiments, for those skilled in the art, still may be used
To modify to the technical solution recorded in aforementioned case study on implementation or equivalent replacement of some of the technical features,
All within the spirits and principles of the present invention, any modification, equivalent replacement, improvement and so on should be included in the present invention's
Within protection domain.
Present invention uses laser direct writing equipment, graphical as GaAs sill surface micro-nano structures prepares tool,
The preparation method is easy, and graphic structure has designability；Equipment of the present invention is the general of laser writing field
Equipment, this method be not high to equipment requirement；The present invention is by reasonable disposition laser parameter, it can be achieved that the quarter of atomic layer magnitude depth
Erosion.
Finally it should be noted that：The foregoing is merely the preferred embodiment of patent of the present invention, it is not limited to this
Invention, although the present invention is described in detail referring to the foregoing embodiments, for those skilled in the art, according to
It can so modify to the technical solution recorded in aforementioned case study on implementation, or which part technical characteristic is equally replaced
It changes, all within the spirits and principles of the present invention, any modification, equivalent replacement, improvement and so on should be included in the present invention
Protection domain within.
Claims (11)
1. a kind of atomic layer lithographic method using laser direct-writing, it is characterised in that the preparation method comprises the following steps：
Step a：Choose GaAs substrates；
Step b：Oxide layer processing and grown buffer layer processing are removed to the GaAs substrates；
Step c：InAs films or InGaAs films are deposited in the substrate obtained by the step b；
Step d：Using carrying out patterned quarter on InAs films of the laser direct-writing obtained by the step c or InGaAs films
It writes.
2. the atomic layer lithographic method according to claim 1 using laser direct-writing, it is characterized in that：In the step a
GaAs substrates include one kind in the GaAs substrates of GaAs (001), GaAs (011) and GaAs (111) high preferred orientation.
3. the atomic layer lithographic method according to claim 1 using laser direct-writing, it is characterized in that：It is right in the step b
The processing of substrate uses one kind in molecular beam epitaxial device or vapor phase epitaxial growth equipment.
4. the atomic layer lithographic method according to claim 1 using laser direct-writing, it is characterized in that：Delay in the step b
Between the growth thickness for rushing layer is 10nm-10 μm.
5. the atomic layer lithographic method according to claim 1 using laser direct-writing, it is characterized in that：In the step c
The thickness of InAs is between 0.1ML-1.5ML.
6. the atomic layer lithographic method according to claim 1 using laser direct-writing, it is characterized in that：In the step c
The thickness of InGaAs is between 1nm-50nm.
7. the atomic layer lithographic method according to claim 1 using laser direct-writing, it is characterized in that：In the step d, shine
It is mapped to the laser parameter of sample surfaces, pulsewidth is between 1ns-1000ns, energy density 1mJ/cm2-1J/cm2Between.
8. the atomic layer lithographic method according to claim 1 using laser direct-writing, it is characterized in that：The step d's holds
Row atmosphere is one kind in air atmosphere, vacuum or atmosphere of inert gases.
9. the atomic layer lithographic method according to claim 1 using laser direct-writing, it is characterized in that：In the step d, base
Between the temperature of piece is 10 DEG C -550 DEG C.
10. the atomic layer lithographic method according to claim 1 using laser direct-writing, it is characterized in that：In the step d,
The depth that laser single is inscribed is between 0.3nm-3nm.
11. the atomic layer lithographic method according to claim 1 using laser direct-writing, it is characterized in that：In the step d,
The laser writing same position at least alignment twice.
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| CN201810143612.4A CN108364859A (en) | 2018-02-11 | 2018-02-11 | A kind of atomic layer lithographic method using laser direct-writing |
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| CN201810143612.4A CN108364859A (en) | 2018-02-11 | 2018-02-11 | A kind of atomic layer lithographic method using laser direct-writing |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109399558A (en) * | 2018-11-13 | 2019-03-01 | 西南交通大学 | Gallium arsenide surface nanoprocessing method based on photochemistry assisted selective etching |
| CN111627800A (en) * | 2020-05-11 | 2020-09-04 | 天津大学 | Efficient processing method for ultrashort pulsed light on atomic-level surface and structure |
| CN114654097A (en) * | 2022-02-24 | 2022-06-24 | 苏州大学 | Molecular beam epitaxy-based in-situ laser interference lithography method |
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| CN102841507A (en) * | 2011-06-23 | 2012-12-26 | 虎尾科技大学 | Laser direct writing type nanometer periodic structure pattern manufacturing equipment |
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| CN106624371A (en) * | 2016-12-29 | 2017-05-10 | 无锡格菲电子薄膜科技有限公司 | Method for forming patterned graphene on target device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109399558A (en) * | 2018-11-13 | 2019-03-01 | 西南交通大学 | Gallium arsenide surface nanoprocessing method based on photochemistry assisted selective etching |
| CN111627800A (en) * | 2020-05-11 | 2020-09-04 | 天津大学 | Efficient processing method for ultrashort pulsed light on atomic-level surface and structure |
| CN111627800B (en) * | 2020-05-11 | 2023-10-24 | 天津大学 | Atomic-level surface and structure ultrashort pulse light efficient processing method |
| CN114654097A (en) * | 2022-02-24 | 2022-06-24 | 苏州大学 | Molecular beam epitaxy-based in-situ laser interference lithography method |
| CN114654097B (en) * | 2022-02-24 | 2023-03-07 | 苏州大学 | Molecular beam epitaxy-based in-situ laser interference lithography method |
| WO2023159829A1 (en) * | 2022-02-24 | 2023-08-31 | 苏州大学 | In-situ laser interference photolithography method based on molecular beam epitaxy |
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